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WO2006056730A3 - Protection of surfaces exposed to charged particles - Google Patents

Protection of surfaces exposed to charged particles Download PDF

Info

Publication number
WO2006056730A3
WO2006056730A3 PCT/GB2005/003918 GB2005003918W WO2006056730A3 WO 2006056730 A3 WO2006056730 A3 WO 2006056730A3 GB 2005003918 W GB2005003918 W GB 2005003918W WO 2006056730 A3 WO2006056730 A3 WO 2006056730A3
Authority
WO
WIPO (PCT)
Prior art keywords
mirror surface
deposits
charged particles
euv radiation
coating
Prior art date
Application number
PCT/GB2005/003918
Other languages
French (fr)
Other versions
WO2006056730A2 (en
Inventor
Robert Bruce Grant
Original Assignee
Boc Group Plc
Robert Bruce Grant
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Plc, Robert Bruce Grant filed Critical Boc Group Plc
Priority to EP05791381A priority Critical patent/EP1815294A2/en
Priority to JP2007542076A priority patent/JP2008522399A/en
Publication of WO2006056730A2 publication Critical patent/WO2006056730A2/en
Publication of WO2006056730A3 publication Critical patent/WO2006056730A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method is described of protecting a surface of a mirror (20) located in a chamber (10) exposed to extreme ultra violet (EUV) radiation (14) . The EUV radiation is generated from a plasma (12) , which emits both EUV radiation and electrically charged particles. Organic molecules are supplied to the chamber, which interact with the EUV radiation to form a coating of carbonaceous deposits on the mirror surface. The charged particles emitted from the plasma impact the deposits, causing the deposits to be sputtered from the mirror surface. By controlling at least one of the rate of deposition of deposits on the mirror surface and the rate of removal of the deposits from the mirror surface, the thickness of the coating can be actively controlled both to prevent impact of the charged particles directly on to the mirror surface and to minimise the loss of reflectivity of the mirror surface due to the formation of the coating. The method is also suitable for protecting the surface of a window used to transmit EUV radiation from the chamber.
PCT/GB2005/003918 2004-11-26 2005-10-11 Protection of surfaces exposed to charged particles WO2006056730A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05791381A EP1815294A2 (en) 2004-11-26 2005-10-11 Protection of surfaces exposed to charged particles
JP2007542076A JP2008522399A (en) 2004-11-26 2005-10-11 Protection of surfaces exposed to charged particles

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0426036.0 2004-11-26
GBGB0426036.0A GB0426036D0 (en) 2004-11-26 2004-11-26 Protection of surfaces exposed to charged particles

Publications (2)

Publication Number Publication Date
WO2006056730A2 WO2006056730A2 (en) 2006-06-01
WO2006056730A3 true WO2006056730A3 (en) 2007-03-22

Family

ID=33561420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/003918 WO2006056730A2 (en) 2004-11-26 2005-10-11 Protection of surfaces exposed to charged particles

Country Status (7)

Country Link
EP (1) EP1815294A2 (en)
JP (1) JP2008522399A (en)
KR (1) KR20070084558A (en)
CN (1) CN101061435A (en)
GB (1) GB0426036D0 (en)
TW (1) TW200632571A (en)
WO (1) WO2006056730A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
GB0605725D0 (en) * 2006-03-23 2006-05-03 Boc Group Plc Spectral filter repair
GB0614028D0 (en) * 2006-07-14 2006-08-23 Boc Group Plc Method of controlling contamination of a surface
CN101681114B (en) 2007-06-12 2013-05-08 皇家飞利浦电子股份有限公司 Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity
US7671348B2 (en) * 2007-06-26 2010-03-02 Advanced Micro Devices, Inc. Hydrocarbon getter for lithographic exposure tools
WO2010004482A1 (en) 2008-07-07 2010-01-14 Philips Intellectual Property & Standards Gmbh Extreme uv radiation reflecting element comprising a sputter-resistant material
US20220066071A1 (en) * 2020-08-27 2022-03-03 Kla Corporation Protection of optical materials of optical components from radiation degradation
CN114280893B (en) * 2021-11-25 2023-08-01 中国科学院微电子研究所 Pollution control system and method of photoetching machine and photoetching machine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010053414A1 (en) * 1999-06-08 2001-12-20 Leonard E. Klebanoff Mitigation of radiation induced surface contamination
EP1186957A2 (en) * 2000-09-04 2002-03-13 Asm Lithography B.V. Lithographic projection apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010053414A1 (en) * 1999-06-08 2001-12-20 Leonard E. Klebanoff Mitigation of radiation induced surface contamination
EP1186957A2 (en) * 2000-09-04 2002-03-13 Asm Lithography B.V. Lithographic projection apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOSTER N ET AL: "Molecular contamination mitigation in EUVL by environmental control", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 61-62, July 2002 (2002-07-01), pages 65 - 76, XP004360517, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
EP1815294A2 (en) 2007-08-08
JP2008522399A (en) 2008-06-26
WO2006056730A2 (en) 2006-06-01
TW200632571A (en) 2006-09-16
KR20070084558A (en) 2007-08-24
CN101061435A (en) 2007-10-24
GB0426036D0 (en) 2004-12-29

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