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WO2003100864A3 - Dispositif a semi-conducteurs haute tension - Google Patents

Dispositif a semi-conducteurs haute tension Download PDF

Info

Publication number
WO2003100864A3
WO2003100864A3 PCT/US2003/015975 US0315975W WO03100864A3 WO 2003100864 A3 WO2003100864 A3 WO 2003100864A3 US 0315975 W US0315975 W US 0315975W WO 03100864 A3 WO03100864 A3 WO 03100864A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
voltage semiconductor
jfet region
dmosfet
mgt
Prior art date
Application number
PCT/US2003/015975
Other languages
English (en)
Other versions
WO2003100864A9 (fr
WO2003100864A2 (fr
Inventor
Tatsing Paul Chow
Original Assignee
Rensselaer Polytech Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst filed Critical Rensselaer Polytech Inst
Priority to AU2003241545A priority Critical patent/AU2003241545A1/en
Publication of WO2003100864A2 publication Critical patent/WO2003100864A2/fr
Publication of WO2003100864A3 publication Critical patent/WO2003100864A3/fr
Publication of WO2003100864A9 publication Critical patent/WO2003100864A9/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne de nouveaux dispositifs à semi-conducteurs présentant des champs de surface réduits, destinés à augmenter la fiabilité de tels dispositifs. Ces champs de surface peuvent être modulés par augmentation de la hauteur de canal mesa du dispositif à semi-conducteurs afin d'isoler le canal MOS du champ électrique élevé. Cette isolation peut être exécutée, par exemple, dans n'importe quel dispositif de commutation d'alimentation (par exemple, FET, IGBT, MGT, etc.) pour augmenter sa performance par réduction du risque de panne de matériel.
PCT/US2003/015975 2002-05-21 2003-05-21 Dispositif a semi-conducteurs haute tension WO2003100864A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003241545A AU2003241545A1 (en) 2002-05-21 2003-05-21 High-voltage semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38222802P 2002-05-21 2002-05-21
US60/382,228 2002-05-21

Publications (3)

Publication Number Publication Date
WO2003100864A2 WO2003100864A2 (fr) 2003-12-04
WO2003100864A3 true WO2003100864A3 (fr) 2004-03-11
WO2003100864A9 WO2003100864A9 (fr) 2004-05-06

Family

ID=29584379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/015975 WO2003100864A2 (fr) 2002-05-21 2003-05-21 Dispositif a semi-conducteurs haute tension

Country Status (2)

Country Link
AU (1) AU2003241545A1 (fr)
WO (1) WO2003100864A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829402B2 (en) 2009-02-10 2010-11-09 General Electric Company MOSFET devices and methods of making
CN102790077B (zh) * 2012-08-24 2014-12-10 电子科技大学 一种绝缘栅双极型晶体管

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132955A1 (de) * 1981-08-20 1983-03-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor und verfahren zu seiner herstellung
US6096607A (en) * 1997-08-18 2000-08-01 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132955A1 (de) * 1981-08-20 1983-03-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor und verfahren zu seiner herstellung
US6096607A (en) * 1997-08-18 2000-08-01 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TANG Y ET AL: "Design and simulations of 5000 V MOS-gated bipolar transistor (MGT) on 4H-SiC", INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS, ICSRM'99, RESEARCH TRIANGLE PARK, NC, USA, 10-15 OCT. 1999, vol. 338-342, pt.2, Materials Science Forum, 2000, Trans Tech Publications, Uetikon-Zuerich, Switzerland, pages 1415 - 1418, XP001156318, ISSN: 0255-5476 *

Also Published As

Publication number Publication date
WO2003100864A9 (fr) 2004-05-06
WO2003100864A2 (fr) 2003-12-04
AU2003241545A8 (en) 2003-12-12
AU2003241545A1 (en) 2003-12-12

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