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WO2003100864A9 - Dispositif a semi-conducteurs haute tension - Google Patents

Dispositif a semi-conducteurs haute tension

Info

Publication number
WO2003100864A9
WO2003100864A9 PCT/US2003/015975 US0315975W WO03100864A9 WO 2003100864 A9 WO2003100864 A9 WO 2003100864A9 US 0315975 W US0315975 W US 0315975W WO 03100864 A9 WO03100864 A9 WO 03100864A9
Authority
WO
WIPO (PCT)
Prior art keywords
field
sic
dmos
channel
jfet region
Prior art date
Application number
PCT/US2003/015975
Other languages
English (en)
Other versions
WO2003100864A2 (fr
WO2003100864A3 (fr
Inventor
Tatsing Paul Chow
Original Assignee
Rensselaer Polytech Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst filed Critical Rensselaer Polytech Inst
Priority to AU2003241545A priority Critical patent/AU2003241545A1/en
Publication of WO2003100864A2 publication Critical patent/WO2003100864A2/fr
Publication of WO2003100864A3 publication Critical patent/WO2003100864A3/fr
Publication of WO2003100864A9 publication Critical patent/WO2003100864A9/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Definitions

  • the field of the invention relates to semiconductor devices, and more particularly, to semiconductor devices used in high-power applications.
  • Si Silicon
  • semiconductors referred to in the art as widegap semiconductors, particularly SiC and GaN have been the focus of development as these types of semiconductors are predicted to have much better performance than silicon.
  • semiconductors offer a lower intrinsic carrier concentration, higher electric breakdown field, higher thermal conductivity, a larger saturated electron drift velocity as compared to silicon.
  • IGBT Insulated-Gate Bipolar Transistor
  • SCR Silicon-Controlled Rectifier
  • GTO Gate-Controlled Thyristor
  • MCT MOS-Controlled Thyristor
  • MPS Merged Pin/Schottky
  • MFS MOS Barrier Schottky
  • Two or three terminal semiconductor power devices can be generally classified into unipolar and bipolar families, dependent on whether a single type of carrier (unipolar devices using electrons or holes as carriers) and both types of carriers (bipolar devices using both electrons and holes) are present during the conduction or on-state.
  • Power rectifiers e.g., Schottky rectifiers
  • power MOSFETs belong to the unipolar group while junction rectifiers, BJTs, IGBTs and thyristors (SCRs) belong to the bipolar group.
  • Unipolar devices are attractive at low breakdown voltages because of their fast switching speeds, while bipolar devices are preferred at higher breakdown voltages because of conductivity modulation of the drift region produced by double injection (lowering the on-resistance).
  • the blocking voltage rating above which bipolar devices are favored is about 300 V.
  • the cross-over voltage is approximately 2500 V.
  • a higher insulator electric field is expected for a relative permittivity lower than that of SiC due to the oxide reliability at greater temperatures.
  • a higher electric field can be expected using an oxide such as Si0 2 .
  • the oxide Si0 2 the field is approximately 7.5 times higher than the field present when silicon is used, and the field is within 75% of the intrinsic breakdown field of 10 MV/cm.
  • hot carrier effects tend to degrade insulator quality by creating traps and Si0 2 is significantly prone to hot electron effects at temperatures as low as 3000 degrees C.
  • an improved semiconductor device that reduces the electric field located near the top of the oxide/substrate interface. More particularly, when using SiC as the substrate and Si0 2 as the oxide, and in a DMOS device, the field is reduced at the drain end of the DMOS channel near the wafer surface.
  • the trench depth (or channel length referred to hereinafter as the "mesa height") of the JFET region can be independently varied with respect to the p-body junction depth.
  • the surface electric field can be reduced with increasing mesa height.
  • the mesa height can be increased (e.g., to 2.5 ⁇ m or more as shown in Fig. 3) to reduce the surface field to that of conventional silicon planar DMOS devices.
  • This structure may be applied, for example, to any power MOS device, including IGBT and MCT device structures, and high-voltage power MOSFET devices.
  • an integrated circuit device comprising a semiconductor substrate having a surface and within which a JFET region is formed, and an oxide layer formed upon the surface of the semiconductor substrate, the device having an electrical configuration in which the JFET region is capable of being formed below the surface of the semiconductor substrate, the JFET region having a height that provides for a reduction in an electric field in the oxide layer within an operating region of the integrated circuit.
  • the device further comprises a p-body junction formed below the JFET region, and wherein the height of the JFET region is independently determined with respect to p-body junction depth.
  • the oxide layer includes Si0 2 .
  • the substrate includes SiC.
  • the height of the JFET region is used that substantially reduces the field to a level approximating Si-based devices.
  • the integrated circuit device is a DMOS IGBT device.
  • the integrated circuit device is a DMOS MGT device.
  • the integrated circuit device is a DMOS FET.
  • a MOS channel is formed during operation of the device, and wherein the height of the JFET region reduces the magnitude of the field in the MOS channel.
  • the oxide layer includes Si0 2 and the substrate includes SiC.
  • Figure 1 is a block diagram showing a cross-sectional view of a conventional IGBT device
  • Figure 2 is a block diagram showing a cross-sectional view of a conventional DMOS MGT device
  • Figure 3 is a chart showing a relationship between a magnitude of an electric field measured in a JFET channel of a semiconductor device and a mesa height of the JFET channel according to one embodiment of the present invention
  • Figure 4 is a block diagram showing a cross-sectional view of an IGBT device according to one embodiment of the invention
  • Figure 5 is a block diagram showing a cross-sectional view of an MGT device according to one embodiment of the invention.
  • Figure 6 is a block diagram showing a cross-sectional view of a FET device according to one embodiment of the invention.
  • these surface fields may be modulated by increasing the mesa channel height of the semiconductor device to isolate the MOS channel from the high electric field. This isolation may be performed, for example, in any power switching device to increase its performance by reducing the chance of material breakdown.
  • Figure 1 shows a diagram of a type of conventional semiconductor device in whose structure may be modified according to various aspects of the invention. More particularly, Figure 1 shows a conventional DMOS IGBT device 100.
  • Device 100 includes an emitter 101, collector 102, base 106A, 106B, and gate 103.
  • Device 100 includes a semiconductor substrate 109, which may be, for example SiC, and may be P+ doped. Upon substrate 109, other layers may be formed. For instance, on this substrate is formed an N- buffer layer 108, and on top of buffer layer 108 is formed an N- drift layer 107.
  • Device 100 also includes a number of N+ regions 105A-105B formed in P- base regions 106A-106B, respectively.
  • P- base regions 106A-106B are deposited on N- drift layer 107.
  • a MOS channel 110 is formed that traverses N+ region 105 A horizontally through P- base region 106A near the surface of the N- drift layer 107 that contacts oxide layer 104, and through this channel current flows.
  • a similar MOS channel is formed through region 105B, P- base 106B and N- drift layer 107.
  • Oxide layer 104 forms a portion of gate 103 and may be made from Si0 2 as discussed above. Also, as noted above, the Si0 2 /SiC interface has a correspondingly higher electric field at the interface than a corresponding Si0 2 /Si interface due to the 8-10 time higher avalanche field in SiC. This high field is problematic, as it may be near to breakdown voltage limits of device 100 and may affect reliability.
  • FIG. 2 shows a conventional DMOS MGT device 200, wherein the DMOS channel is formed similar to that of the IGBT as discussed above with reference to Figure 1.
  • the structure of DMOS MGT device 200 may also be modified according to various aspects of the invention.
  • this conventional device may include an oxide (e.g., Si0 2 ) that contacts an SiC layer.
  • Si0 2 oxide
  • the electric field at the Si0 /SiC interface is higher than the corresponding Si0 2 /Si interface due to the 8-10 times higher avalanche field in SiC. As a result, there is a higher electric field produced near the DMOS channel.
  • device 200 includes an on gate 201 for turning device 200 on, and an off gate 202 for turning device 200 off.
  • Device 200 also includes a floating base 203, emitter 207, and collector 204.
  • Device 200 includes an N+ substrate 211 upon which other layers are formed. For instance, an N- drift layer 210 may be formed on top of substrate 211.
  • Device 200 also includes a number of N+ regions 205A, 205B formed in a P- base material 209 which is formed on N- drift layer 210.
  • P+ region 206 is formed between N+ regions 205 A and 205B, and is in contact with floating base 203.
  • N+ region 208 is formed on top of P- base region 209 and is in electrical contact with emitter 207.
  • oxide layers 212, 213 are also used to form the on and off gates, respectively, and are in electrical contact with SiC material of device 100.
  • oxide layer 212 interfaces with N- drift layer 210 near on gate 201.
  • these gates may be made using the Si0 2 oxide as discussed above.
  • the Si0 2 /SiC interface has a correspondingly higher electric field at the interface than a corresponding Si0 2 /Si interface due to the 8-10 time higher avalanche field in SiC. This high voltage is problematic, as it may be near to breakdown voltage limits of device 200 and this may affect reliability of device 200.
  • one embodiment of the present invention is directed to adjusting the height of the JFET region to reduce the field near the MOS channel. This may be accomplished, for example, by lengthening the height between the Si0 2 /SiC surface and the bottom portion of the JFET region. This lengthening increases the field drop along the vertical length of the region, thereby lowering the field near the MOS channel.
  • the relation between mesa height and the magnitude of the electric field is shown with particularity in chart 300 of Figure 3.
  • Figure 3 shows a plot of the electric field at device breakdown along the center of the JFET region as a function of the trench depth (Td).
  • the surface electric field in a 5000V conventional planar DMOS transistor is approximately 1.6 MV/cm, leading to an oxide field of 4MV/cm, which is at least five (5) times higher than an Si- based related device. This high oxide field should be avoided for reliability concerns.
  • the surface field can be reduced with increasing mesa height.
  • the surface electric field is approximately 1.6 MV/cm.
  • This field may be lowered by adjusting the trench depth (of mesa height) to a value greater than zero.
  • the mesa height may be increased in this particular example to 2.5 ⁇ m or more, bringing the surface field down to a value that approaches the surface field of conventional Si planar DMOS devices.
  • a DMOS device in one embodiment, includes an increased mesa height which in turn reduces the surface field near the DMOS channel.
  • Figure 4 shows one embodiment of a DMOS IGBT device having an increased mesa height. Although an IGBT device is shown, it should be appreciated that this method of increasing the channel height may be applied to other types of semiconductor devices that are sensitive to overvoltage conditions. For instance, as shown in Figures 5 and Figure 6, aspects of the invention may be implemented in an MGT device and a power FET device, respectively.
  • the voltage drop across the JFET region significantly reduces the oxide/SiC field at the drain end of the DMOS channel near the wafer surface.
  • the electric field at device breakdown along the center of the JFET region is plotted as a function of trench depth. For trench depths larger than l ⁇ m, the oxide field is less than 1 MV/cm and similar in magnitude to that found in state-of-the-art silicon power DMOSFETs.
  • Such a trenched DMOS process can also be applied to other power MOS devices such as the IGBT and MCT. Also, such a trench DMOS structure can also be used in the termination area to reduce the surface electric field.
  • Device 400 includes a gate 401, emitters 402A, 402B and a collector 403.
  • Device 400 includes a semiconductor substrate 409, which may be, for example SiC, and may be P+ doped.
  • substrate 409 Upon substrate 409, other layers may be formed using conventional methods for depositing semiconductor materials. For instance, layers may be epitaxially grown on 6H- and 4H-SiC substrates.
  • N- drift layer 408 On this substrate 409 is formed an N- drift layer 408, and on top of drift layer 408 is formed a number of P regions 406, 407.
  • Device 100 also includes a number of N+ regions 410A-410B formed in P- regions 406, 407, respectively.
  • P- regions 406, 407 are deposited on N- drift layer 408.
  • a MOS channel 411 is formed that traverses N+ region 410A horizontally through P- region 406 near the surface of the N- drift layer 408 that contacts oxide layer 405, and through this channel current flows.
  • a similar MOS channel 412 is formed through region 410B, P- region 407 and N- drift layer 408.
  • Oxide layer 405 forms a portion of gate 401 and may be made from Si0 2 as discussed above. Also, as noted above, the Si0 2 /SiC interface has a correspondingly higher electric field at the interface than a corresponding Si0 2 /Si interface due to the 8-10 times higher avalanche field in SiC. However, this additional field is compensated for by isolating the MOS channel from the field by lengthening the JFET channel, thereby decreasing the field near the MOS channel. As is shown, this height h (item 404) may be adjusted such that the field is within acceptable limits.
  • FIG. 5 shows a view of an MGT device 500 according to one embodiment of the invention.
  • Device 500 includes an on gate 501, an off gate 502 floating base 503, emitter 504 and collector 505.
  • Device 500 also includes semiconductor substrate 507, which may be, for example, SiC, and may be N+ doped.
  • substrate 507 Upon substrate 507, other layers may be formed. For instance, on the substrate may be formed an N- drift layer 506.
  • a P- base region 510 may be deposited on N- drift layer 506.
  • a number of additional regions may be formed, including N+ region 508A, N+ region 508B, N+ region 509 and P+ region 511.
  • Oxide layer 513 forms a portion of gate 501 and may be made form Si0 as discussed above. Also, as noted above, the Si0 2 /SiC interface has a correspondingly higher electric field at the interface than a corresponding Si0 2 /Si interface due to the 8-10 times higher avalanche field in SiC. However, this additional field may be compensated for by isolating MOS channel 512 from the field by lengthening the JFET channel. As is shown, this height H (item 514) may be adjusted such that the field is within acceptable limits. As discussed above with reference to Figures 3 and 4.
  • Figure 6 shows a power FET device 600 according to one embodiment of the present invention.
  • Device 600 includes a gate 601, sources 602A, 602B and a drain 603.
  • Device 600 also includes a substrate 605, which may be, for example, SiC, and this substrate may be N+ doped. Upon substrate 605, other layers may be formed. For example, on substrate 605 may be formed an N- drift layer 604.
  • Device 600 also includes a number of P regions 606A and 606B formed on N- drift layer 604. Upon P regions 606A, 606B are respectively formed N+ regions 607A and 607B.
  • Device 600 also includes source regions 602A and 602B.
  • Oxide layer 611 forms a portion of gate 601 and may be made from Si0 2 as discussed above. Also, as noted above, the Si0 2 /SiC interface has a correspondingly higher electric field at the interface than a corresponding Si0 /Si interface due to the 8-10 times higher avalanche field in SiC. However, this additional field may be compensated for by isolating the MOS channel (e.g., channel 609, 610) from the field by lengthening the JFET channel. As is shown in Figure 6, this height H (item 608) may be adjusted such that the field is within acceptable limits as discussed above with reference to Figures 3 and 4.
  • MOS- gated power bipolar transistors IGBT or MGT
  • junction rectifiers are good candidates for high-voltage applications.
  • BV breakdown voltage
  • unipolar transistors are fast switching, the on-resistance increases rapidly (varies as (BV) 2,5 ) with increasing breakdown voltage (BV).
  • BV breakdown voltage
  • unipolar devices are not attractive for BV over 2500 V.
  • thyristors have nearly the highest level of conductivity modulation possible but have a limited safe-operating-area under forward and reverse bias conditions (called FBSOA and RBSOA respectively) due to the formation of current filaments, which must be suppressed to prevent device failure.
  • FBSOA and RBSOA safe-operating-area under forward and reverse bias conditions
  • MOS-gated, voltage-control power bipolar transistors may be used for power applications, as these devices have minority carrier injection level higher than that of unipolar transistors but lower than that of thyristors and which exhibit current saturation in their I-V characteristics.
  • the trenched DMOS (T-DMOS) according to one embodiment of the invention may be implemented to minimize the gate oxide field and maximize gate oxide reliability.
  • the Insulated Gate Bipolar Transistor is the most popular MOS-gated bipolar transistor in silicon because of its high input impedance, low forward drop and current saturation features.
  • SiC Insulated Gate Bipolar Transistor
  • the operation of the IGBT can be modelled as a n-channel MOSFET driving a wide-base pnp bipolar transistor connected in the Darlington configuration.
  • the high substrate resistance is equivalent to adding extra emitter resistance to the pnp transistor, leading a higher forward drop.
  • the substrate resistance is not an issue because heavily doped n+ and p+ substrates are readily available.
  • the use of the complementary p- channel IGBT circumvents the problem of the p+ substrate.
  • the input MOSFET is now a p-channel device, resulting in a higher channel resistance and a lower transconductance, through its effect is tampered by the higher npn transistor gain.
  • the wide-base npn bipolar transistor has a narrower stability region than the pnp counterpart.
  • the parasistic four-layer thyristor structure present in the IGBT must be suppressed to retain gate control and to prevent latchup, which is more likely to occur at elevated temperatures.
  • MOS-gated bipolar transistor which has been previously produced in silicon
  • MOS-gated bipolar transistor is a viable alternative to the IGBT.
  • the input n-channel MOSFET is driving a narrow-base npn bipolar transistor connected also in the Darlington configuration.
  • both transistors are n-type, only three-layer parasitics exist in the device structure so that latchup is not possible.
  • a turn-off MOSFET can also be designed into the MGT.
  • This MOSFET enhances the turn-off of the npn by providing a shunting path between the emitter and base of the npn transistor and performs active turn-off.
  • the open base pnp transistor needs to be turned off by minority carrier recombination alone.
  • the MGT also has a DMOS turn-on channel, the T-DMOS can also be applied to the MGT to lower the gate oxide field. Comparing the I-V characteristic of a 5000 V IGBT and MGT (both n-channel), the MGT is very similar to the IGBT. Both the MGT and IGBT may be developed for power applications using various aspects of the invention.
  • the main advantage of the elongated trench DMOS structure is that it can reduce the electric field in the gate dielectric of SiC devices to that in conventional silicon power devices using conventional MOS processes.
  • the increased parasitic JFET channel length results in a higher parasitic JFET resistance, and the need for trench etching leads to a non-planar device surface, when compared to planar DMOS.
  • the choice of the MGT eliminates the substrate doping problem of the n-channel SiC IGBT and has a better forward drop than IGBT at room temperature though it has slightly worse forward drop of 350°C. Also, the MGT allows active turn-off and generally has a faster turn-off transient than the IGBT. Furthermore, the safe-operating-area of the MGT is equal or close to that of the IGBT despite the main constituent transistor is npn (vs. pnp for the equivalent IGBT) because of the lightly doped n collector layer and the higher electron saturation velocity.
  • MGT and the IGBT have a significantly better RBSOA and faster turn-off time (especially at elevated temperatures) than any thyristor structures, including the GTO, because of a lower level of conductivity modulation, though it also has a slightly higher forward drop.
  • Another advantageous feature of the MGT and the IGBT is that they can be driven and controlled from an integrated circuit while additional discrete active devices (e.g., a MOSFET and rectifier) and passive elements (e.g., a snubber) are needed for the GTO.
  • additional discrete active devices e.g., a MOSFET and rectifier
  • passive elements e.g., a snubber

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne de nouveaux dispositifs à semi-conducteurs présentant des champs de surface réduits, destinés à augmenter la fiabilité de tels dispositifs. Ces champs de surface peuvent être modulés par augmentation de la hauteur de canal mesa du dispositif à semi-conducteurs afin d'isoler le canal MOS du champ électrique élevé. Cette isolation peut être exécutée, par exemple, dans n'importe quel dispositif de commutation d'alimentation (par exemple, FET, IGBT, MGT, etc.) pour augmenter sa performance par réduction du risque de panne de matériel.
PCT/US2003/015975 2002-05-21 2003-05-21 Dispositif a semi-conducteurs haute tension WO2003100864A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003241545A AU2003241545A1 (en) 2002-05-21 2003-05-21 High-voltage semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38222802P 2002-05-21 2002-05-21
US60/382,228 2002-05-21

Publications (3)

Publication Number Publication Date
WO2003100864A2 WO2003100864A2 (fr) 2003-12-04
WO2003100864A3 WO2003100864A3 (fr) 2004-03-11
WO2003100864A9 true WO2003100864A9 (fr) 2004-05-06

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AU (1) AU2003241545A1 (fr)
WO (1) WO2003100864A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790077A (zh) * 2012-08-24 2012-11-21 电子科技大学 一种绝缘栅双极型晶体管

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829402B2 (en) 2009-02-10 2010-11-09 General Electric Company MOSFET devices and methods of making

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132955A1 (de) * 1981-08-20 1983-03-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor und verfahren zu seiner herstellung
JP3180895B2 (ja) * 1997-08-18 2001-06-25 富士電機株式会社 炭化けい素半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790077A (zh) * 2012-08-24 2012-11-21 电子科技大学 一种绝缘栅双极型晶体管

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WO2003100864A2 (fr) 2003-12-04
WO2003100864A3 (fr) 2004-03-11
AU2003241545A8 (en) 2003-12-12
AU2003241545A1 (en) 2003-12-12

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