WO2003038883A1 - Fluide et procede de polissage - Google Patents
Fluide et procede de polissage Download PDFInfo
- Publication number
- WO2003038883A1 WO2003038883A1 PCT/JP2002/011370 JP0211370W WO03038883A1 WO 2003038883 A1 WO2003038883 A1 WO 2003038883A1 JP 0211370 W JP0211370 W JP 0211370W WO 03038883 A1 WO03038883 A1 WO 03038883A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- metal
- water
- polishing fluid
- oxidizing agent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003541040A JPWO2003038883A1 (ja) | 2001-10-31 | 2002-10-31 | 研磨液及び研磨方法 |
| US10/493,867 US20050050803A1 (en) | 2001-10-31 | 2002-10-31 | Polishing fluid and polishing method |
| CNB028265513A CN100386850C (zh) | 2001-10-31 | 2002-10-31 | 研磨液及研磨方法 |
| US11/802,813 US8084362B2 (en) | 2001-10-31 | 2007-05-25 | Polishing slurry and polishing method |
| US12/320,752 US8084363B2 (en) | 2001-10-31 | 2009-02-04 | Polishing slurry and polishing method |
| US13/299,699 US8481428B2 (en) | 2001-10-31 | 2011-11-18 | Polishing slurry and polishing method |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-334376 | 2001-10-31 | ||
| JP2001334376 | 2001-10-31 | ||
| JP2002-10280 | 2002-01-18 | ||
| JP2002010280 | 2002-01-18 | ||
| JP2002-160181 | 2002-05-31 | ||
| JP2002160181 | 2002-05-31 |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/493,867 A-371-Of-International US20050050803A1 (en) | 2001-10-31 | 2002-10-31 | Polishing fluid and polishing method |
| US10493867 A-371-Of-International | 2002-10-31 | ||
| US11/802,813 Division US8084362B2 (en) | 2001-10-31 | 2007-05-25 | Polishing slurry and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003038883A1 true WO2003038883A1 (fr) | 2003-05-08 |
Family
ID=27347759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/011370 WO2003038883A1 (fr) | 2001-10-31 | 2002-10-31 | Fluide et procede de polissage |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20050050803A1 (ja) |
| JP (3) | JPWO2003038883A1 (ja) |
| KR (1) | KR100704690B1 (ja) |
| CN (2) | CN101058713B (ja) |
| TW (2) | TWI314950B (ja) |
| WO (1) | WO2003038883A1 (ja) |
Cited By (29)
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|---|---|---|---|---|
| JP2005109257A (ja) * | 2003-09-30 | 2005-04-21 | Fujimi Inc | 研磨用組成物 |
| JP2005123482A (ja) * | 2003-10-17 | 2005-05-12 | Fujimi Inc | 研磨方法 |
| JP2005129822A (ja) * | 2003-10-27 | 2005-05-19 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
| JP2005162893A (ja) * | 2003-12-03 | 2005-06-23 | Kanto Chem Co Inc | 金属膜のエッチング液組成物 |
| WO2006030595A1 (ja) * | 2004-09-14 | 2006-03-23 | Hitachi Chemical Company, Ltd. | Ｃｍｐ用研磨スラリー |
| JP2006510807A (ja) * | 2002-12-16 | 2006-03-30 | スリーエム イノベイティブ プロパティズ カンパニー | 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物 |
| WO2007052862A1 (en) * | 2005-11-04 | 2007-05-10 | Cheil Industries Inc. | Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film and method for preparing the same |
| JP2007150184A (ja) * | 2005-11-30 | 2007-06-14 | Jsr Corp | 有機膜研磨用化学的機械的研磨スラリー、化学的機械的研磨方法、ならびに半導体装置の製造方法 |
| JP2008160112A (ja) * | 2006-12-21 | 2008-07-10 | Dupont Air Products Nanomaterials Llc | 銅の化学機械平坦化用組成物 |
| JP2008182213A (ja) * | 2006-12-21 | 2008-08-07 | Dupont Air Products Nanomaterials Llc | 化学機械研磨の間に銅除去速度に対して低ｋを調整する方法およびスラリー |
| KR100854483B1 (ko) * | 2004-09-14 | 2008-08-26 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ용 연마 슬러리 |
| EP1724819A4 (en) * | 2004-03-08 | 2008-10-15 | Asahi Glass Co Ltd | POLISHING AGENT AND POLISHING METHOD |
| JP2009507659A (ja) * | 2005-09-09 | 2009-02-26 | サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド | 導電性炭化水素流体 |
| JP2009117789A (ja) * | 2007-10-17 | 2009-05-28 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| JP2009147394A (ja) * | 2009-03-30 | 2009-07-02 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
| JP2009158810A (ja) * | 2007-12-27 | 2009-07-16 | Toshiba Corp | 化学的機械的研磨用スラリーおよび半導体装置の製造方法 |
| JP2010010717A (ja) * | 2004-03-08 | 2010-01-14 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| JP2010503232A (ja) * | 2006-09-05 | 2010-01-28 | キャボット マイクロエレクトロニクス コーポレイション | 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法 |
| JP2011513991A (ja) * | 2008-03-05 | 2011-04-28 | キャボット マイクロエレクトロニクス コーポレイション | 水溶性酸化剤を用いた炭化ケイ素の研磨方法 |
| US8062547B2 (en) | 2005-06-03 | 2011-11-22 | K.C. Tech Co., Ltd. | CMP slurry, preparation method thereof and method of polishing substrate using the same |
| CN102352187A (zh) * | 2007-07-05 | 2012-02-15 | 日立化成工业株式会社 | 金属膜用研磨液及研磨方法 |
| JP2012067254A (ja) * | 2010-09-27 | 2012-04-05 | Fujifilm Corp | 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法 |
| CN1837320B (zh) * | 2004-03-24 | 2012-05-09 | 福吉米株式会社 | 抛光用组合物及抛光方法 |
| JP2012146974A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
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| KR101476656B1 (ko) * | 2007-03-26 | 2014-12-26 | 후지필름 가부시키가이샤 | 연마액 |
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| US10796921B2 (en) | 2009-07-16 | 2020-10-06 | Hitachi Chemical Company, Ltd. | CMP fluid and method for polishing palladium |
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| US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
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| JPWO2015019820A1 (ja) * | 2013-08-09 | 2017-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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| CN102352187B (zh) * | 2007-07-05 | 2015-03-18 | 日立化成株式会社 | 金属膜用研磨液及研磨方法 |
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| JP2009147394A (ja) * | 2009-03-30 | 2009-07-02 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
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| JP2014140056A (ja) * | 2009-08-19 | 2014-07-31 | Hitachi Chemical Co Ltd | Ｃｍｐ研磨液及び研磨方法 |
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| JP2012067254A (ja) * | 2010-09-27 | 2012-04-05 | Fujifilm Corp | 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法 |
| JP2012146974A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
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Also Published As
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|---|---|
| US20050050803A1 (en) | 2005-03-10 |
| US8084362B2 (en) | 2011-12-27 |
| CN101058713B (zh) | 2011-02-09 |
| KR100704690B1 (ko) | 2007-04-10 |
| KR20050042038A (ko) | 2005-05-04 |
| US8481428B2 (en) | 2013-07-09 |
| US8084363B2 (en) | 2011-12-27 |
| JP2008199036A (ja) | 2008-08-28 |
| US20090156007A1 (en) | 2009-06-18 |
| CN100386850C (zh) | 2008-05-07 |
| JP2011205113A (ja) | 2011-10-13 |
| TWI314950B (en) | 2009-09-21 |
| US20070232197A1 (en) | 2007-10-04 |
| CN1610963A (zh) | 2005-04-27 |
| JPWO2003038883A1 (ja) | 2005-02-24 |
| JP5447437B2 (ja) | 2014-03-19 |
| TW200831656A (en) | 2008-08-01 |
| US20120064721A1 (en) | 2012-03-15 |
| CN101058713A (zh) | 2007-10-24 |
| TWI308926B (ja) | 2009-04-21 |
| TW200300168A (en) | 2003-05-16 |
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