WO2003012836A1 - Systeme, appareil et procede de fabrication de semi-conducteurs, ainsi que dispositif a semi-conducteurs - Google Patents
Systeme, appareil et procede de fabrication de semi-conducteurs, ainsi que dispositif a semi-conducteurs Download PDFInfo
- Publication number
- WO2003012836A1 WO2003012836A1 PCT/JP2002/007761 JP0207761W WO03012836A1 WO 2003012836 A1 WO2003012836 A1 WO 2003012836A1 JP 0207761 W JP0207761 W JP 0207761W WO 03012836 A1 WO03012836 A1 WO 03012836A1
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- Prior art keywords
- equipment
- semiconductor manufacturing
- semiconductor
- chemical
- manufacturing apparatus
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 245
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 204
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- 239000000356 contaminant Substances 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- -1 polyethylene terephthalate Polymers 0.000 claims description 15
- 229920006362 Teflon® Polymers 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 12
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 12
- 229920000098 polyolefin Polymers 0.000 claims description 12
- 238000004378 air conditioning Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000003566 sealing material Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229920000515 polycarbonate Polymers 0.000 claims description 10
- 239000004417 polycarbonate Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000003973 paint Substances 0.000 claims description 8
- 239000005416 organic matter Substances 0.000 claims description 7
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- 238000003860 storage Methods 0.000 claims description 7
- 239000002390 adhesive tape Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
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- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims description 4
- 235000010354 butylated hydroxytoluene Nutrition 0.000 claims description 3
- SPSPIUSUWPLVKD-UHFFFAOYSA-N 2,3-dibutyl-6-methylphenol Chemical compound CCCCC1=CC=C(C)C(O)=C1CCCC SPSPIUSUWPLVKD-UHFFFAOYSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
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- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
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- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 4
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- MQOMKCIKNDDXEZ-UHFFFAOYSA-N 1-dibutylphosphoryloxy-4-nitrobenzene Chemical compound CCCCP(=O)(CCCC)OC1=CC=C([N+]([O-])=O)C=C1 MQOMKCIKNDDXEZ-UHFFFAOYSA-N 0.000 description 1
- 241001061140 Caulophryne pelagica Species 0.000 description 1
- 101000713211 Colocasia esculenta Mannose-specific lectin TAR1 Proteins 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 239000000809 air pollutant Substances 0.000 description 1
- 231100001243 air pollutant Toxicity 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical class OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F3/00—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems
- F24F3/12—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling
- F24F3/16—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling by purification, e.g. by filtering; by sterilisation; by ozonisation
- F24F3/167—Clean rooms, i.e. enclosed spaces in which a uniform flow of filtered air is distributed
Definitions
- the present invention relates to a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device suitable for application to manufacture and manufacture of a semiconductor integrated circuit device and a liquid crystal display device in a clean room. More specifically, a semiconductor manufacturing device using a material that does not emit chemical contamination is installed in the clean room so that semiconductor devices can be manufactured in a clean room maintained in a clean and pure atmosphere. is there. Background art
- semiconductor manufacturing devices devices that manufacture semiconductor integrated circuit devices and liquid crystal display devices (hereinafter referred to as semiconductor manufacturing devices) have been installed in a tallin room that eliminates submicron particulate dust, and strict dust management has been performed. Have been. However, in recent years, as semiconductor processing has become finer, not only particulate dust but also gaseous air pollutants and so-called chemical contamination (Chemical Contamination) have been attracting attention.
- air washers are installed in external controllers to prevent ionic components from entering the clean room from outside air, and silicon with low volatilization of low-molecular siloxane is used to prevent the generation of organic matter from building components.
- Use sealing material To prevent the generation of boron (B) from high-performance air conditioning filters (Ultra Low Penetration Filter: ULPA).
- ULPA Ultra Low Penetration Filter
- Chemical contaminants emitted from components of semiconductor manufacturing equipment may contaminate air in areas other than the clean room into which air with reduced chemical contaminants has been sent. Therefore, the wafer surface fed into the semiconductor manufacturing apparatus comes into contact with the air, thereby contaminating the wafer surface.
- a semiconductor manufacturing system includes: a clean room for manufacturing a semiconductor device; and a semiconductor manufacturing device using a material that does not emit chemical pollution.
- the semiconductor manufacturing device is installed in the clean room. It is assumed that. According to this semiconductor manufacturing system, the emission of chemical contaminants from the semiconductor manufacturing equipment to the clean room can be eliminated, so that the clean room can be maintained in a clean and pure atmosphere. Therefore, compared to the case of manufacturing semiconductor devices using semiconductor manufacturing equipment that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and The reduction in the operating rate can be reduced. '
- a first semiconductor manufacturing apparatus is an apparatus for manufacturing a semiconductor device, comprising: a device main body; and a device component attached to the device main body or connected to Z and the device main body.
- the equipment itself or Z and equipment parts are characterized by using materials that do not emit chemical pollution.
- the first semiconductor manufacturing apparatus since the emission of chemical contaminants from the apparatus to the clean room can be eliminated, the clean room can be maintained in a clean and pure atmosphere. Therefore, as compared with the case where a semiconductor device is manufactured using a semiconductor manufacturing device using a material that emits chemical pollution, defects caused by contamination of chemical contaminants, quality deterioration, reliability deterioration, It is possible to reduce a decrease in the operation rate of the production line.
- a second semiconductor manufacturing apparatus is an apparatus for manufacturing a semiconductor device, comprising: a device main body; a device component attached to and / or connected to the device main body; Or an enclosure that covers a part or the whole of the device components, and an exhaust unit that exhausts the enclosure.
- the second semiconductor manufacturing apparatus even when a part or all of the main unit and / or the parts of the main unit are unavoidably used, the chemical contaminants are exhausted by the exhaust means to the outside of the clean room.
- the clean room can be maintained in a clean and pure atmosphere.
- the first semiconductor manufacturing method manufactures a semiconductor manufacturing apparatus using a material which does not emit chemical contamination in advance, installs the semiconductor manufacturing apparatus in a clean room, and uses the semiconductor manufacturing apparatus in a clean room. And manufacturing the semiconductor device.
- a semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Therefore, compared to the case where semiconductor devices are manufactured in a clean room using semiconductor manufacturing devices that use materials that emit chemical contamination, high-quality and highly reliable semiconductor devices that are not dependent on chemical contaminants. Can be manufactured. Semiconductor device manufacturing costs can be reduced.
- a second semiconductor manufacturing method is a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus in a clean room, comprising the steps of: covering a part or all of the semiconductor manufacturing apparatus with an enclosure; Exhausting the chemical pollutants out of the clean room.
- the second semiconductor manufacturing method even when a material that emits chemical contamination is used for a part or the whole of the semiconductor manufacturing equipment, the chemical contaminants in the enclosure can be exhausted to the outside of the clean room. The inside can be maintained in a clean and pure atmosphere.
- a semiconductor device includes a semiconductor substrate and an electronic circuit element formed on the semiconductor substrate, and the semiconductor substrate and / or the semiconductor device is manufactured by using a semiconductor manufacturing device manufactured using a material that does not emit chemical contamination.
- the electronic circuit element is manufactured.
- this semiconductor device a semiconductor device using a material that emits chemical pollution is manufactured. It is possible to provide a high-quality and high-reliability semiconductor device that is not dependent on chemical contaminants as compared with a case where a semiconductor device is manufactured using a manufacturing apparatus.
- FIG. 1 is a schematic diagram showing a configuration example of a semiconductor manufacturing system 100 as a first embodiment according to the present invention.
- FIG. 2 is a schematic diagram of a clean room showing a configuration example of a semiconductor manufacturing system 200 as a second embodiment according to the present invention.
- FIG. 3 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 201 as a first embodiment of the present invention.
- FIG. 4 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 202 as a second embodiment according to the present invention.
- FIG. 5 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 203 as a third embodiment according to the present invention.
- An object of the present invention is to provide a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device that can maintain a clean room in a clean and pure atmosphere.
- a semiconductor manufacturing apparatus using a material that does not emit chemical contamination is installed in the clean room, so that the semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Things.
- the semiconductor manufacturing system 100 previously manufactures a semiconductor manufacturing device 20 using a material that does not emit chemical contamination, and installs the semiconductor manufacturing device 20 in the clean room 1 to clean the semiconductor room.
- To be used to manufacture semiconductor devices using semiconductor manufacturing equipment 20 First semiconductor manufacturing method).
- the semiconductor manufacturing system 100 shown in FIG. 1 is a system for manufacturing a semiconductor integrated circuit device or a liquid crystal display device (hereinafter, simply referred to as a semiconductor device). This system
- the clean room 1 has a ceiling 16, a floor 14, and walls 10 A and 10 B, and although not shown, of course, has an entrance through which a worker 9 enters and exits.
- a fan filter unit (FFU) 13 is disposed, and the back side of the ceiling 16 is a ceiling plenum chamber 11.
- the floor 14 of the clean room 1 is provided with a plurality of openings 14 A for ventilation, the floor 14 is provided with floor structural members 15 behind the floor 14, and the floor 14 is provided with a return floor below the floor 14. It has become.
- the above-mentioned ceiling plenum chanamba 11 and the underfloor return area 12 are connected through an air conditioner 17 and ducts 8A and 8B.
- An air conditioner 18 is installed in the middle of the ducts 8A and 8B.
- the air conditioner 18 has a built-in air washer 19, which purifies the air to take in outside air and replenish it to the clean room 1. It is made to make a dagger.
- the air purified by the air conditioner 18 is sent to the ceiling plenum chamber 11 by the air conditioner 17 and blown out to the clean room 1 by the fan filter unit 13 to ventilate the floor 14. It is sucked into the underfloor return area 12 through the opening 14A.
- the air in the clean room 1 is circulated by the air conditioner 17 through the ceiling plenum champ 1 1 ⁇ fanfi / reunit 13 ⁇ inside the clean room 1 ⁇ opening 14 A ⁇ underfloor return area 1 2 ⁇ ducts 8 A, 8 B It is done as follows.
- the clean air is supplied to the clean room 1 from outside.
- the building structure up to this point can adopt the same configuration as the conventional clean room.
- a semiconductor manufacturing apparatus 20 using a material that does not emit chemical pollution is installed in the clean room 1, and the manufacturing apparatus 200 is used for manufacturing a semiconductor device. It is composed of equipment or Z and equipment parts.
- the semiconductor manufacturing apparatus 20 includes, for example, an apparatus main body and Z and / or device parts attached to the apparatus main body or connected to the apparatus main body.
- the product is made of a material that does not emit chemical contamination.
- a material composed of a polyolefin, Teflon (trademark), polyethylene terephthalate, or phenol or polycarbonate material is used (first semiconductor manufacturing equipment).
- the semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of resist, adhesive tape, and piping, or a combination of these, has a main device and / or device component.
- At least one or all of printed circuit boards, printed circuit board resist, adhesive tape, and piping are made of materials that do not emit chemical contamination. This is to prevent emission of chemical pollutants into the clean room 1 concerned.
- Semiconductor manufacturing equipment 20 includes exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, plasma film-forming equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, and ions. It constitutes at least one of an injection device, a chemical mechanical polishing device, a transport device, and a storage device.
- an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been.
- this semiconductor manufacturing apparatus 20 instead of a conventional vinyl chloride-coated wire, a wire coated with a polyolefin-based material or a Teflon (trademark) -based material containing no plasticizer or the like is used, so that the clean room 1 It is designed to eliminate the emission of chemical contaminants into the interior.
- a wire coated with a polyolefin-based material or a Teflon (trademark) -based material containing no plasticizer or the like is used, so that the clean room 1 It is designed to eliminate the emission of chemical contaminants into the interior.
- a low-boron filter material and a low-organic-emission material are used to seal the filter material.
- a transparent resin panel is used in the semiconductor manufacturing apparatus 20
- a polyethylene sheet is used instead of a transparent vinyl chloride sheet which emits a lot of organic matter.
- PET Terephthalate
- PC polycarbonate
- a sealant with low siloxane volatilization is used for sealing the plate material.
- the emission of chemical pollutants into the clean room 1 is eliminated.
- reducing the emission of chemical contamination from the semiconductor manufacturing equipment 20 by replacing the material that emits chemical contamination with a material that emits little or no emission at all. Can be.
- a case where a drive unit for driving a fan, a stage, or the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 1.
- the clean room itself may be constructed using materials that do not emit chemical pollution.
- a material that does not emit chemical pollution is used as a material or a coating material of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 1OA and 10B.
- this non-contaminating material is not only paint materials, but also lighting wiring to the clean room 1, resin panels for partitions, sealing materials between panels, resin sheets, air-conditioning filters, heat insulating materials, adhesives, Adhesive tapes and pipes are also made of materials that do not emit chemical contamination.
- a filter using a low boron-containing filter medium is used for the ULPA filter built into the fan filter unit 13 and a filter that uses a material that emits little organic matter is used for the seal material. .
- the constituent materials of the semiconductor manufacturing apparatus 20 are replaced from materials that emit chemical contamination to materials that do not emit chemical contamination.
- emission of chemical pollutants from the semiconductor manufacturing apparatus 20 to the clean room 1 can be eliminated. Therefore, the clean room 1 can be maintained in a clean and pure atmosphere.
- the semiconductor device manufactured by the semiconductor manufacturing system 100 for example, a semiconductor substrate is provided, and an electronic circuit element formed on the semiconductor substrate is provided. A semiconductor substrate and / or an electronic circuit element are manufactured by the manufactured semiconductor manufacturing apparatus 20.
- the above-mentioned electronic circuit element is a liquid crystal display element.
- the semiconductor device manufactured using such a system 100 the semiconductor device is more dependent on chemical contaminants than when the semiconductor device is manufactured using a semiconductor manufacturing device 20 using a material that emits chemical pollution. It is possible to provide a high-quality and high-reliability semiconductor device which is not performed with high yield.
- the initial investment for an air purifying mechanism that purifies air using, for example, a chemical filter can be reduced, and the running cost of the conventional air purifying mechanism can be reduced.
- a slight increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the tallen room 1, etc., is sufficient.
- a polyolefin-based material a Teflon (trademark) -based, a polyethylene terephthalate-based or a polycarbonate-based material has been described with respect to the material that does not emit chemical contamination.
- the present invention is not limited to this.
- new materials can be found by analysis such as gas chromatography.
- a semiconductor manufacturing apparatus 20 using a chemical-contamination non-dispersing material is disposed in a bay-type clean room 2 shown in FIG.
- components having the same reference numerals and the same names as those in the first embodiment have the same functions, and a description thereof will be omitted.
- the clean room 2 shown in FIG. 2 is provided with partitions 24 that separate the work area.
- a work area ceiling chamber 21 is provided at the ceiling of this work area. 1 ⁇
- a duct 8 G is arranged in the well plenum chamber 11.
- the work area divided by the partition 24 is a work passage 1OA and a maintenance area 23.
- the duct 8B attached to the air conditioner 17 and the air conditioner 18 in this system 200 is divided into a duct 8C and a ceiling plenum champer 11.
- One of the ducts 8B is connected to a duct 8C through a chemical filter 22, and the other is connected to a ceiling plenum champer 11.
- the air cleaned by the air conditioner 18 is sent to the ceiling plenum champ 11 by the air conditioner 17, blown out to the maintenance area 23 by the fan filter unit 13, and the ventilation opening of the floor 14 is provided. It is sucked into the underfloor return area 1 2 through 14 A.
- Air in maintenance area 2 3 is ducted by air conditioner 17 7 B 8 ⁇ ceiling plenum champ 1 1 ⁇ fan fin unit 1 3 ⁇ inside maintenance area ⁇ opening 14 A ⁇ return area under floor 1 2 ⁇ duct 8 A , 8B.
- the semiconductor manufacturing apparatus 20 is arranged in the maintenance area 23, and an operation unit is provided in front of the semiconductor manufacturing apparatus 20.
- the air in the taleen room 2 is supplied by the air conditioner 17 to the duct 8B ⁇ the chemical filter 22 ⁇ the duct.
- 8 C Work area ceiling chamber 2 1 — Inside work passage ⁇ Opening 14 A ⁇ Underfloor return area 1 2 ⁇ Ducts 8 A and 8 B are circulated.
- the clean air is replenished from the outside to the maintenance area 23, the work channel 10C, and the like.
- the building structure up to this point can adopt the same configuration as the conventional bay-type clean room.
- a semiconductor manufacturing apparatus 20 using a material that does not emit chemical contamination is installed in a clean room 2 that includes a maintenance area 23 and a work passageway 10C.
- This manufacturing apparatus 20 is also composed of a main body device and / or other device parts for manufacturing a semiconductor device in the same manner as in the first embodiment.
- Non-contaminating, non-contaminating materials are used for the main body or Z and the parts of the semiconductor manufacturing apparatus 20.
- polyolefin-based, Teflon-based, polyethylene terephthalate Those made of mono- or Z- and polycarbonate-based materials are used.
- the semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of the resist, the adhesive tape, and the piping or a main unit or a device component obtained by combining them is provided.
- the semiconductor manufacturing apparatus 20 includes an exposure apparatus, a coating apparatus, an imaging apparatus, a cleaning apparatus, a measuring apparatus, a chemical vapor deposition apparatus, a plasma film forming apparatus, a diffusion furnace apparatus, and an etching apparatus. It constitutes at least one of a plating device, a lapping device, an asshing device, an ion pouring device, a chemical mechanical polishing device, a transport device, and a storage device.
- a coated electric wire is used in the semiconductor manufacturing apparatus 200 described above in this system 200, an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been.
- a filter medium using a low amount of boron and a sealant having low organic substance emission are used for sealing the filter medium.
- a transparent resin panel is used in the semiconductor manufacturing apparatus 20
- PET polyethylene terephthalate
- PC polycarbonate
- a sealant with low siloxane volatilization which reduces the volatilization of siloxane, is used for sealing the plate material.
- the emission of chemical pollutants into the clean room 2 is eliminated.
- the emission of chemical contamination from the body manufacturing apparatus 20 can be reduced.
- a case where a drive unit for driving a fan, a stage, and the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 2.
- the clean room itself may be constructed using materials that do not emit chemical pollution.
- a material that does not emit chemical pollution is used as a material for the surface of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 10A and 10B or a coating material.
- floor structural members 15, ceiling 16 and walls 10A and 10B, the duct 8C, the partition 24, and the like also use materials that do not emit chemical contamination.
- lighting wiring to the maintenance area 23 and the work passage 10C, resin panels for partitioning, material for panels between panels, resin sheets, finoleta for air conditioning, heat insulating materials, adhesives, bonding Materials that do not emit chemical pollution are also used for tapes and piping.
- the semiconductor manufacturing system 200 in the pay-type clean room 2 in which air with reduced chemical contaminants is sent through a chemical filter 22 or the like, By replacing the constituent materials of semiconductor manufacturing equipment 20 from materials that emit chemical pollution to materials that do not emit chemical pollution, chemicals from semiconductor manufacturing equipment 20 to maintenance area 23 and work passages 10 C etc. Emission of contaminants can be eliminated. Therefore, the maintenance area 23 and the work passage 10C can be maintained in a clean and pure atmosphere. Compared to manufacturing semiconductor devices using semiconductor manufacturing equipment 20 that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and lower manufacturing This can reduce the decrease in the operating rate of the application.
- the initial investment for an air purifying mechanism for purifying air by using a chemical filter 22 or the like can be reduced, and the conventional air purifying mechanism can be reduced.
- a small increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the clean room 2, etc. can be achieved.
- a polyolefin-based material a Teflon (trademark) -based material, a polyethylene terephthalate-based material, or a Z- and polycarbonate-based material has been described as a material that does not emit chemical contamination.
- the present invention is not limited thereto. For divergent materials, this includes all new materials found by analysis such as gas chromatography.
- an S MIF Silicon Mechanical
- Standard Mechanical which is an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 or clean room 2 or the like.
- the semiconductor manufacturing apparatus 201 shown in FIG. 3 constitutes, for example, a chemical vapor deposition apparatus, and has a casing 300 having a predetermined shape serving as an apparatus main body.
- a processing area 33 extends from the center of the housing 300 to the right side.
- control units 37A and 37B which are equipment components, are provided below the machining area 33.
- An insulated wire 38 is connected to the control unit 37A, and an insulated wire 38 is also connected between the control units 37A and 37B to supply power and the like.
- an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used for the covered electric wire 38.
- a transparent resin panel 39 is attached to the front surface of the housing 300 so that the inside can be observed.
- a polyethylene terephthalate (PET) plate or a polycarbonate (PC) plate is used for the transparent resin panel 39.
- PET polyethylene terephthalate
- PC polycarbonate
- a low siloxane-evaporating sealant with reduced siloxane volatilization is used to seal the plate material.
- the SMIF interface 30 is provided on the left side of the housing 300 so that the wafer cassette 31 can be inserted and removed.
- a plurality of semiconductor wafers 3OA are set in the wafer cassette 31.
- a wafer transfer path 301 is provided between the interface 30 and the processing area 33, and the wafer cassette 31 is transferred. An example For example, it moves in the apparatus as indicated by an arrow 32 and is guided to a processing area 33.
- the wafer force set 31 uses a material that does not emit chemical contamination.
- This semiconductor wafer sealed container maintains a certain degree of airtightness during transportation between devices and during storage.
- SMIF's dedicated mounting port cassettes and semiconductor wafers are sealed in the SMIF.
- the container In the container (FOUP; Front Opening Unified Pod), only the semiconductor wafer 30A is taken in.
- the semiconductor wafer 3OA is fed into the processing area 33 or taken out from the semiconductor manufacturing apparatus 201, the semiconductor hermetic container and the dedicated mounting port are made to maintain a certain airtightness.
- a chemical filter 35 and a fan 34 are attached to the ceiling of the wafer transfer path 301, and in the process of transferring the wafer cassette 31 or the semiconductor wafer 3OA taken out of the wafer cassette 31, The air sent from the fan 34 is supplied to the exposed portion of the semiconductor wafer 3OA through the chemical filter 35. This is because the exposed semiconductor wafer 3OA was not affected by chemical contaminants.
- a filter material with a low amount of boron used and a low-organic material-dispersing screen material are used to seal the filter material.
- a chemical vapor deposition apparatus or the like using a material that does not emit chemical contamination is disposed.
- Emission of chemical contaminants within the temperature range can be eliminated. Therefore, it is possible to maintain a clean and pure atmosphere in the clean room 1 ⁇ ⁇ clean room 2 etc., compared to the case where semiconductor devices are manufactured using a chemical vapor deposition apparatus using materials that emit chemical pollution. As a result, it is possible to reduce the occurrence of defects, quality deterioration, reliability deterioration, and reduction in the operation rate of the production line due to the contamination of the chemical contaminants.
- an exposure apparatus 202 as an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 ⁇ clean room 2 uses a material that does not emit chemical contamination.
- the exposure apparatus 202 shown in FIG. 4 has a casing 60 having a predetermined shape. Inside housing 60 The central area is an exposure area 40, and an optical unit 45 is provided in the exposure area 40 so as to expose a semiconductor wafer 3OA with a transistor circuit, a wiring pattern, and the like. Below the optical unit 45, a wafer mounting table 53 is provided below the optical unit 45. An air conditioner 48 is provided on the right side of the housing 60, and a fan 41 is mounted inside the air conditioner 48.
- An exposure area ceiling chamber 49 is provided at the ceiling of the exposure area 40, and a ULPA filter 43 is attached to the exposure area ceiling chamber 49.
- a chemical filter 42 is provided between the upper part of the air conditioner 48 and the exposure area ceiling chamber 49 to clean the circulating air.
- a filter material having a low boron content and a low-organic-emission sealing material are used to seal the filter material. Materials that do not emit chemical contamination are used.
- a gallery 54 is provided below the air conditioner 48 so that air is taken in from the exposure area 40 into the air conditioner 48. The gallery 54 is made of louver-shaped material that does not emit chemical pollution.
- a control unit 46 is provided on the back of the air conditioner 48 described above. The control unit 46 is connected to a covered electric wire 47 to supply power and the like. As the coated electric wire 47, an electric wire coated with a polyolefin or Z and Teflon (trademark) material is used.
- this exposure apparatus 202 in the process of exposing the semiconductor wafer 3 OA by the optical unit 45, air sent from the fan 41 of the air conditioner 48 is passed through the chemical filter 42 and the ULPA filter 43 to expose the exposure area 4. Feed to 0 and circulate. This is to prevent contamination of the optical unit 45 with chemical contaminants.
- the housing 60, the gallery 54, and the like are configured by using a material that does not emit chemical contamination.
- emission of chemical contaminants in the housing 60 can be eliminated. Therefore, the interior of the clean room 1 or the clean room 2 can be maintained in a clean and pure atmosphere, and the chemical contamination can be reduced as compared with the case where the semiconductor wafer 3 OA is exposed by an exposure apparatus using a material which emits chemical contamination. Less occurrence of defects due to material contamination, lower quality, lower reliability, and less reduction in production line availability can do.
- the enclosure when configuring the third semiconductor manufacturing system, components that may emit chemical contaminants are surrounded by an enclosure, the enclosure is provided with an exhaust port, and an appropriate exhaust means is provided in the exhaust port. It is connected so that the air inside the enclosure can be discharged out of the manufacturing equipment.
- a semiconductor device is manufactured using the semiconductor manufacturing device 203 in the clean room 1 or the tallen room 2 or the like, and a part of the semiconductor manufacturing device 203 is used.
- the method includes a step of covering the entire structure with an enclosure, and a step of exhausting chemical contaminants in the enclosure to the outside of the clean room 1 or the tallinn room 2 (second semiconductor manufacturing method).
- the semiconductor manufacturing apparatus 203 shown in FIG. 5 is a chemical vapor growth apparatus as described in the first embodiment, and control units 37A and 37B are attached to the main body of the apparatus.
- the control units 37A and 37B are provided so as to cover the whole with a sealed panel case 50 as an example of an enclosure.
- the sealed panel case 50 has a duct 51 and its duct 51
- the exhaust means 52 is attached at the end of.
- a duct 51 leading to the outside of the clean room 1 ⁇ ⁇ ⁇ clean room 2 for example, is connected to the sealed panel case 50, and an exhaust means 52 such as a fan is attached to the middle or end of the duct 51 for control.
- Units 37 A and 37 B are exposed to chemical contaminants outside Clean Room 1 and Clean Nome 2.
- the chemical contaminants include at least one of the ionic component, organic matter, and inorganic matter.
- the sealed panel case (a point of interest) 50 does not need to be a part of the semiconductor manufacturing apparatus 203 as in the control units 37 A and 37 B, but the entire semiconductor manufacturing apparatus. Alternatively, the entire interior may be exhausted by surrounding the space. Exhaust is intended to prevent chemical pollutants emitted from the equipment components from being emitted into the clean room air. As a result, the exhaust destination does not necessarily need to be outside the clean room 1 or clean room 2, etc., so that the exhaust gas is passed through a suitable chemical filter to remove chemical pollutants and returned to the clean room. It does not matter.
- a material capable of emitting chemical contamination is used for a part of the main unit or the entire control units 37A and 37B. Even if it is unavoidable to use, the closed panel case 50 is attached to the part of the main unit to cover the entire control units 37A and 37B, so that the chemical contaminants in the closed panel case 50 can be removed.
- the exhaust means 52 By means of the exhaust means 52, the air can be exhausted to the place where the filter is installed outside the clean room or in the tallen room.
- the interior of the tallen room 1 and the tallen room 2 can be maintained in a pure and pure atmosphere.
- chemical contaminants that emanate from the semiconductor manufacturing equipment 203 into the clean room air are reduced, and the occurrence of defects due to chemical contaminants, lower quality, lower reliability, and lower production line operation rates are reduced. be able to.
- the manufacturing cost of the semiconductor device can be reduced.
- the present invention is very suitable when applied to the manufacture of a liquid crystal display device in a clean room, a semiconductor integrated circuit device, and the like.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
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- General Engineering & Computer Science (AREA)
- Ventilation (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
Abstract
L'invention concerne un système de fabrication de semi-conducteurs qui comprend une salle blanche (1) pour fabriquer un dispositif à semi-conducteurs et un appareil de fabrication de semi-conducteurs (20) mettant en oeuvre un matériau ne libérant pas de contaminant chimique. L'appareil de fabrication de semi-conducteurs (20) est placé dans la salle blanche (1). Ainsi aucun contaminant chimique n'est libéré de l'appareil de fabrication de semi-conducteurs (20) dans la chambre blanche (1) et par conséquent, l'intérieur de la chambre blanche (1) peut être maintenu dans un état propre et purifié. En comparaison de la fabrication d'un dispositif à semi-conducteurs à l'aide d'un appareil de fabrication de semi-conducteurs (20) mettant en oeuvre un matériau libérant des contaminants chimiques, dans la fabrication de semi-conducteurs selon le système de cette invention, les défauts dus à la contamination par les contaminants chimiques, la dégradation de la qualité, la diminution de la fiabilité, et la réduction du coefficient brut d'exploitation de la ligne de production sont faibles.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-232659 | 2001-07-31 | ||
JP2001232659A JP2003042498A (ja) | 2001-07-31 | 2001-07-31 | 半導体製造システム、半導体製造装置、半導体製造方法及び半導体装置 |
Publications (1)
Publication Number | Publication Date |
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WO2003012836A1 true WO2003012836A1 (fr) | 2003-02-13 |
Family
ID=19064545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/007761 WO2003012836A1 (fr) | 2001-07-31 | 2002-07-30 | Systeme, appareil et procede de fabrication de semi-conducteurs, ainsi que dispositif a semi-conducteurs |
Country Status (2)
Country | Link |
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JP (1) | JP2003042498A (fr) |
WO (1) | WO2003012836A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2527755A3 (fr) * | 2011-05-25 | 2014-05-07 | Omron Corporation | Procédé de commande de réglage de qualité d'air, procédé de commande d'écoulement d'air de ventilation et système de commande de l'écoulement d'air de ventilation |
CN109790064A (zh) * | 2016-11-16 | 2019-05-21 | 日本电气硝子株式会社 | 玻璃基板的制造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100599435B1 (ko) * | 2004-05-17 | 2006-07-14 | 주식회사 하이닉스반도체 | 기판을 세정하기 위한 장치 |
JP4525789B2 (ja) * | 2008-04-17 | 2010-08-18 | 株式会社デンソー | 作業設備および作業設備における局所クリーンルーム |
JP6453284B2 (ja) * | 2016-09-02 | 2019-01-16 | 伸和コントロールズ株式会社 | 空気調和システム |
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Also Published As
Publication number | Publication date |
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JP2003042498A (ja) | 2003-02-13 |
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