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WO2003012836A1 - Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device - Google Patents

Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device Download PDF

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Publication number
WO2003012836A1
WO2003012836A1 PCT/JP2002/007761 JP0207761W WO03012836A1 WO 2003012836 A1 WO2003012836 A1 WO 2003012836A1 JP 0207761 W JP0207761 W JP 0207761W WO 03012836 A1 WO03012836 A1 WO 03012836A1
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WO
WIPO (PCT)
Prior art keywords
equipment
semiconductor manufacturing
semiconductor
chemical
manufacturing apparatus
Prior art date
Application number
PCT/JP2002/007761
Other languages
French (fr)
Japanese (ja)
Inventor
Yasushi Kato
Toshikazu Suzuki
Hirohisa Kooriyama
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Publication of WO2003012836A1 publication Critical patent/WO2003012836A1/en

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24FAIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F3/00Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems
    • F24F3/12Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling
    • F24F3/16Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling by purification, e.g. by filtering; by sterilisation; by ozonisation
    • F24F3/167Clean rooms, i.e. enclosed spaces in which a uniform flow of filtered air is distributed

Definitions

  • the present invention relates to a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device suitable for application to manufacture and manufacture of a semiconductor integrated circuit device and a liquid crystal display device in a clean room. More specifically, a semiconductor manufacturing device using a material that does not emit chemical contamination is installed in the clean room so that semiconductor devices can be manufactured in a clean room maintained in a clean and pure atmosphere. is there. Background art
  • semiconductor manufacturing devices devices that manufacture semiconductor integrated circuit devices and liquid crystal display devices (hereinafter referred to as semiconductor manufacturing devices) have been installed in a tallin room that eliminates submicron particulate dust, and strict dust management has been performed. Have been. However, in recent years, as semiconductor processing has become finer, not only particulate dust but also gaseous air pollutants and so-called chemical contamination (Chemical Contamination) have been attracting attention.
  • air washers are installed in external controllers to prevent ionic components from entering the clean room from outside air, and silicon with low volatilization of low-molecular siloxane is used to prevent the generation of organic matter from building components.
  • Use sealing material To prevent the generation of boron (B) from high-performance air conditioning filters (Ultra Low Penetration Filter: ULPA).
  • ULPA Ultra Low Penetration Filter
  • Chemical contaminants emitted from components of semiconductor manufacturing equipment may contaminate air in areas other than the clean room into which air with reduced chemical contaminants has been sent. Therefore, the wafer surface fed into the semiconductor manufacturing apparatus comes into contact with the air, thereby contaminating the wafer surface.
  • a semiconductor manufacturing system includes: a clean room for manufacturing a semiconductor device; and a semiconductor manufacturing device using a material that does not emit chemical pollution.
  • the semiconductor manufacturing device is installed in the clean room. It is assumed that. According to this semiconductor manufacturing system, the emission of chemical contaminants from the semiconductor manufacturing equipment to the clean room can be eliminated, so that the clean room can be maintained in a clean and pure atmosphere. Therefore, compared to the case of manufacturing semiconductor devices using semiconductor manufacturing equipment that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and The reduction in the operating rate can be reduced. '
  • a first semiconductor manufacturing apparatus is an apparatus for manufacturing a semiconductor device, comprising: a device main body; and a device component attached to the device main body or connected to Z and the device main body.
  • the equipment itself or Z and equipment parts are characterized by using materials that do not emit chemical pollution.
  • the first semiconductor manufacturing apparatus since the emission of chemical contaminants from the apparatus to the clean room can be eliminated, the clean room can be maintained in a clean and pure atmosphere. Therefore, as compared with the case where a semiconductor device is manufactured using a semiconductor manufacturing device using a material that emits chemical pollution, defects caused by contamination of chemical contaminants, quality deterioration, reliability deterioration, It is possible to reduce a decrease in the operation rate of the production line.
  • a second semiconductor manufacturing apparatus is an apparatus for manufacturing a semiconductor device, comprising: a device main body; a device component attached to and / or connected to the device main body; Or an enclosure that covers a part or the whole of the device components, and an exhaust unit that exhausts the enclosure.
  • the second semiconductor manufacturing apparatus even when a part or all of the main unit and / or the parts of the main unit are unavoidably used, the chemical contaminants are exhausted by the exhaust means to the outside of the clean room.
  • the clean room can be maintained in a clean and pure atmosphere.
  • the first semiconductor manufacturing method manufactures a semiconductor manufacturing apparatus using a material which does not emit chemical contamination in advance, installs the semiconductor manufacturing apparatus in a clean room, and uses the semiconductor manufacturing apparatus in a clean room. And manufacturing the semiconductor device.
  • a semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Therefore, compared to the case where semiconductor devices are manufactured in a clean room using semiconductor manufacturing devices that use materials that emit chemical contamination, high-quality and highly reliable semiconductor devices that are not dependent on chemical contaminants. Can be manufactured. Semiconductor device manufacturing costs can be reduced.
  • a second semiconductor manufacturing method is a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus in a clean room, comprising the steps of: covering a part or all of the semiconductor manufacturing apparatus with an enclosure; Exhausting the chemical pollutants out of the clean room.
  • the second semiconductor manufacturing method even when a material that emits chemical contamination is used for a part or the whole of the semiconductor manufacturing equipment, the chemical contaminants in the enclosure can be exhausted to the outside of the clean room. The inside can be maintained in a clean and pure atmosphere.
  • a semiconductor device includes a semiconductor substrate and an electronic circuit element formed on the semiconductor substrate, and the semiconductor substrate and / or the semiconductor device is manufactured by using a semiconductor manufacturing device manufactured using a material that does not emit chemical contamination.
  • the electronic circuit element is manufactured.
  • this semiconductor device a semiconductor device using a material that emits chemical pollution is manufactured. It is possible to provide a high-quality and high-reliability semiconductor device that is not dependent on chemical contaminants as compared with a case where a semiconductor device is manufactured using a manufacturing apparatus.
  • FIG. 1 is a schematic diagram showing a configuration example of a semiconductor manufacturing system 100 as a first embodiment according to the present invention.
  • FIG. 2 is a schematic diagram of a clean room showing a configuration example of a semiconductor manufacturing system 200 as a second embodiment according to the present invention.
  • FIG. 3 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 201 as a first embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 202 as a second embodiment according to the present invention.
  • FIG. 5 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 203 as a third embodiment according to the present invention.
  • An object of the present invention is to provide a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device that can maintain a clean room in a clean and pure atmosphere.
  • a semiconductor manufacturing apparatus using a material that does not emit chemical contamination is installed in the clean room, so that the semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Things.
  • the semiconductor manufacturing system 100 previously manufactures a semiconductor manufacturing device 20 using a material that does not emit chemical contamination, and installs the semiconductor manufacturing device 20 in the clean room 1 to clean the semiconductor room.
  • To be used to manufacture semiconductor devices using semiconductor manufacturing equipment 20 First semiconductor manufacturing method).
  • the semiconductor manufacturing system 100 shown in FIG. 1 is a system for manufacturing a semiconductor integrated circuit device or a liquid crystal display device (hereinafter, simply referred to as a semiconductor device). This system
  • the clean room 1 has a ceiling 16, a floor 14, and walls 10 A and 10 B, and although not shown, of course, has an entrance through which a worker 9 enters and exits.
  • a fan filter unit (FFU) 13 is disposed, and the back side of the ceiling 16 is a ceiling plenum chamber 11.
  • the floor 14 of the clean room 1 is provided with a plurality of openings 14 A for ventilation, the floor 14 is provided with floor structural members 15 behind the floor 14, and the floor 14 is provided with a return floor below the floor 14. It has become.
  • the above-mentioned ceiling plenum chanamba 11 and the underfloor return area 12 are connected through an air conditioner 17 and ducts 8A and 8B.
  • An air conditioner 18 is installed in the middle of the ducts 8A and 8B.
  • the air conditioner 18 has a built-in air washer 19, which purifies the air to take in outside air and replenish it to the clean room 1. It is made to make a dagger.
  • the air purified by the air conditioner 18 is sent to the ceiling plenum chamber 11 by the air conditioner 17 and blown out to the clean room 1 by the fan filter unit 13 to ventilate the floor 14. It is sucked into the underfloor return area 12 through the opening 14A.
  • the air in the clean room 1 is circulated by the air conditioner 17 through the ceiling plenum champ 1 1 ⁇ fanfi / reunit 13 ⁇ inside the clean room 1 ⁇ opening 14 A ⁇ underfloor return area 1 2 ⁇ ducts 8 A, 8 B It is done as follows.
  • the clean air is supplied to the clean room 1 from outside.
  • the building structure up to this point can adopt the same configuration as the conventional clean room.
  • a semiconductor manufacturing apparatus 20 using a material that does not emit chemical pollution is installed in the clean room 1, and the manufacturing apparatus 200 is used for manufacturing a semiconductor device. It is composed of equipment or Z and equipment parts.
  • the semiconductor manufacturing apparatus 20 includes, for example, an apparatus main body and Z and / or device parts attached to the apparatus main body or connected to the apparatus main body.
  • the product is made of a material that does not emit chemical contamination.
  • a material composed of a polyolefin, Teflon (trademark), polyethylene terephthalate, or phenol or polycarbonate material is used (first semiconductor manufacturing equipment).
  • the semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of resist, adhesive tape, and piping, or a combination of these, has a main device and / or device component.
  • At least one or all of printed circuit boards, printed circuit board resist, adhesive tape, and piping are made of materials that do not emit chemical contamination. This is to prevent emission of chemical pollutants into the clean room 1 concerned.
  • Semiconductor manufacturing equipment 20 includes exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, plasma film-forming equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, and ions. It constitutes at least one of an injection device, a chemical mechanical polishing device, a transport device, and a storage device.
  • an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been.
  • this semiconductor manufacturing apparatus 20 instead of a conventional vinyl chloride-coated wire, a wire coated with a polyolefin-based material or a Teflon (trademark) -based material containing no plasticizer or the like is used, so that the clean room 1 It is designed to eliminate the emission of chemical contaminants into the interior.
  • a wire coated with a polyolefin-based material or a Teflon (trademark) -based material containing no plasticizer or the like is used, so that the clean room 1 It is designed to eliminate the emission of chemical contaminants into the interior.
  • a low-boron filter material and a low-organic-emission material are used to seal the filter material.
  • a transparent resin panel is used in the semiconductor manufacturing apparatus 20
  • a polyethylene sheet is used instead of a transparent vinyl chloride sheet which emits a lot of organic matter.
  • PET Terephthalate
  • PC polycarbonate
  • a sealant with low siloxane volatilization is used for sealing the plate material.
  • the emission of chemical pollutants into the clean room 1 is eliminated.
  • reducing the emission of chemical contamination from the semiconductor manufacturing equipment 20 by replacing the material that emits chemical contamination with a material that emits little or no emission at all. Can be.
  • a case where a drive unit for driving a fan, a stage, or the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 1.
  • the clean room itself may be constructed using materials that do not emit chemical pollution.
  • a material that does not emit chemical pollution is used as a material or a coating material of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 1OA and 10B.
  • this non-contaminating material is not only paint materials, but also lighting wiring to the clean room 1, resin panels for partitions, sealing materials between panels, resin sheets, air-conditioning filters, heat insulating materials, adhesives, Adhesive tapes and pipes are also made of materials that do not emit chemical contamination.
  • a filter using a low boron-containing filter medium is used for the ULPA filter built into the fan filter unit 13 and a filter that uses a material that emits little organic matter is used for the seal material. .
  • the constituent materials of the semiconductor manufacturing apparatus 20 are replaced from materials that emit chemical contamination to materials that do not emit chemical contamination.
  • emission of chemical pollutants from the semiconductor manufacturing apparatus 20 to the clean room 1 can be eliminated. Therefore, the clean room 1 can be maintained in a clean and pure atmosphere.
  • the semiconductor device manufactured by the semiconductor manufacturing system 100 for example, a semiconductor substrate is provided, and an electronic circuit element formed on the semiconductor substrate is provided. A semiconductor substrate and / or an electronic circuit element are manufactured by the manufactured semiconductor manufacturing apparatus 20.
  • the above-mentioned electronic circuit element is a liquid crystal display element.
  • the semiconductor device manufactured using such a system 100 the semiconductor device is more dependent on chemical contaminants than when the semiconductor device is manufactured using a semiconductor manufacturing device 20 using a material that emits chemical pollution. It is possible to provide a high-quality and high-reliability semiconductor device which is not performed with high yield.
  • the initial investment for an air purifying mechanism that purifies air using, for example, a chemical filter can be reduced, and the running cost of the conventional air purifying mechanism can be reduced.
  • a slight increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the tallen room 1, etc., is sufficient.
  • a polyolefin-based material a Teflon (trademark) -based, a polyethylene terephthalate-based or a polycarbonate-based material has been described with respect to the material that does not emit chemical contamination.
  • the present invention is not limited to this.
  • new materials can be found by analysis such as gas chromatography.
  • a semiconductor manufacturing apparatus 20 using a chemical-contamination non-dispersing material is disposed in a bay-type clean room 2 shown in FIG.
  • components having the same reference numerals and the same names as those in the first embodiment have the same functions, and a description thereof will be omitted.
  • the clean room 2 shown in FIG. 2 is provided with partitions 24 that separate the work area.
  • a work area ceiling chamber 21 is provided at the ceiling of this work area. 1 ⁇
  • a duct 8 G is arranged in the well plenum chamber 11.
  • the work area divided by the partition 24 is a work passage 1OA and a maintenance area 23.
  • the duct 8B attached to the air conditioner 17 and the air conditioner 18 in this system 200 is divided into a duct 8C and a ceiling plenum champer 11.
  • One of the ducts 8B is connected to a duct 8C through a chemical filter 22, and the other is connected to a ceiling plenum champer 11.
  • the air cleaned by the air conditioner 18 is sent to the ceiling plenum champ 11 by the air conditioner 17, blown out to the maintenance area 23 by the fan filter unit 13, and the ventilation opening of the floor 14 is provided. It is sucked into the underfloor return area 1 2 through 14 A.
  • Air in maintenance area 2 3 is ducted by air conditioner 17 7 B 8 ⁇ ceiling plenum champ 1 1 ⁇ fan fin unit 1 3 ⁇ inside maintenance area ⁇ opening 14 A ⁇ return area under floor 1 2 ⁇ duct 8 A , 8B.
  • the semiconductor manufacturing apparatus 20 is arranged in the maintenance area 23, and an operation unit is provided in front of the semiconductor manufacturing apparatus 20.
  • the air in the taleen room 2 is supplied by the air conditioner 17 to the duct 8B ⁇ the chemical filter 22 ⁇ the duct.
  • 8 C Work area ceiling chamber 2 1 — Inside work passage ⁇ Opening 14 A ⁇ Underfloor return area 1 2 ⁇ Ducts 8 A and 8 B are circulated.
  • the clean air is replenished from the outside to the maintenance area 23, the work channel 10C, and the like.
  • the building structure up to this point can adopt the same configuration as the conventional bay-type clean room.
  • a semiconductor manufacturing apparatus 20 using a material that does not emit chemical contamination is installed in a clean room 2 that includes a maintenance area 23 and a work passageway 10C.
  • This manufacturing apparatus 20 is also composed of a main body device and / or other device parts for manufacturing a semiconductor device in the same manner as in the first embodiment.
  • Non-contaminating, non-contaminating materials are used for the main body or Z and the parts of the semiconductor manufacturing apparatus 20.
  • polyolefin-based, Teflon-based, polyethylene terephthalate Those made of mono- or Z- and polycarbonate-based materials are used.
  • the semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of the resist, the adhesive tape, and the piping or a main unit or a device component obtained by combining them is provided.
  • the semiconductor manufacturing apparatus 20 includes an exposure apparatus, a coating apparatus, an imaging apparatus, a cleaning apparatus, a measuring apparatus, a chemical vapor deposition apparatus, a plasma film forming apparatus, a diffusion furnace apparatus, and an etching apparatus. It constitutes at least one of a plating device, a lapping device, an asshing device, an ion pouring device, a chemical mechanical polishing device, a transport device, and a storage device.
  • a coated electric wire is used in the semiconductor manufacturing apparatus 200 described above in this system 200, an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been.
  • a filter medium using a low amount of boron and a sealant having low organic substance emission are used for sealing the filter medium.
  • a transparent resin panel is used in the semiconductor manufacturing apparatus 20
  • PET polyethylene terephthalate
  • PC polycarbonate
  • a sealant with low siloxane volatilization which reduces the volatilization of siloxane, is used for sealing the plate material.
  • the emission of chemical pollutants into the clean room 2 is eliminated.
  • the emission of chemical contamination from the body manufacturing apparatus 20 can be reduced.
  • a case where a drive unit for driving a fan, a stage, and the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 2.
  • the clean room itself may be constructed using materials that do not emit chemical pollution.
  • a material that does not emit chemical pollution is used as a material for the surface of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 10A and 10B or a coating material.
  • floor structural members 15, ceiling 16 and walls 10A and 10B, the duct 8C, the partition 24, and the like also use materials that do not emit chemical contamination.
  • lighting wiring to the maintenance area 23 and the work passage 10C, resin panels for partitioning, material for panels between panels, resin sheets, finoleta for air conditioning, heat insulating materials, adhesives, bonding Materials that do not emit chemical pollution are also used for tapes and piping.
  • the semiconductor manufacturing system 200 in the pay-type clean room 2 in which air with reduced chemical contaminants is sent through a chemical filter 22 or the like, By replacing the constituent materials of semiconductor manufacturing equipment 20 from materials that emit chemical pollution to materials that do not emit chemical pollution, chemicals from semiconductor manufacturing equipment 20 to maintenance area 23 and work passages 10 C etc. Emission of contaminants can be eliminated. Therefore, the maintenance area 23 and the work passage 10C can be maintained in a clean and pure atmosphere. Compared to manufacturing semiconductor devices using semiconductor manufacturing equipment 20 that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and lower manufacturing This can reduce the decrease in the operating rate of the application.
  • the initial investment for an air purifying mechanism for purifying air by using a chemical filter 22 or the like can be reduced, and the conventional air purifying mechanism can be reduced.
  • a small increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the clean room 2, etc. can be achieved.
  • a polyolefin-based material a Teflon (trademark) -based material, a polyethylene terephthalate-based material, or a Z- and polycarbonate-based material has been described as a material that does not emit chemical contamination.
  • the present invention is not limited thereto. For divergent materials, this includes all new materials found by analysis such as gas chromatography.
  • an S MIF Silicon Mechanical
  • Standard Mechanical which is an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 or clean room 2 or the like.
  • the semiconductor manufacturing apparatus 201 shown in FIG. 3 constitutes, for example, a chemical vapor deposition apparatus, and has a casing 300 having a predetermined shape serving as an apparatus main body.
  • a processing area 33 extends from the center of the housing 300 to the right side.
  • control units 37A and 37B which are equipment components, are provided below the machining area 33.
  • An insulated wire 38 is connected to the control unit 37A, and an insulated wire 38 is also connected between the control units 37A and 37B to supply power and the like.
  • an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used for the covered electric wire 38.
  • a transparent resin panel 39 is attached to the front surface of the housing 300 so that the inside can be observed.
  • a polyethylene terephthalate (PET) plate or a polycarbonate (PC) plate is used for the transparent resin panel 39.
  • PET polyethylene terephthalate
  • PC polycarbonate
  • a low siloxane-evaporating sealant with reduced siloxane volatilization is used to seal the plate material.
  • the SMIF interface 30 is provided on the left side of the housing 300 so that the wafer cassette 31 can be inserted and removed.
  • a plurality of semiconductor wafers 3OA are set in the wafer cassette 31.
  • a wafer transfer path 301 is provided between the interface 30 and the processing area 33, and the wafer cassette 31 is transferred. An example For example, it moves in the apparatus as indicated by an arrow 32 and is guided to a processing area 33.
  • the wafer force set 31 uses a material that does not emit chemical contamination.
  • This semiconductor wafer sealed container maintains a certain degree of airtightness during transportation between devices and during storage.
  • SMIF's dedicated mounting port cassettes and semiconductor wafers are sealed in the SMIF.
  • the container In the container (FOUP; Front Opening Unified Pod), only the semiconductor wafer 30A is taken in.
  • the semiconductor wafer 3OA is fed into the processing area 33 or taken out from the semiconductor manufacturing apparatus 201, the semiconductor hermetic container and the dedicated mounting port are made to maintain a certain airtightness.
  • a chemical filter 35 and a fan 34 are attached to the ceiling of the wafer transfer path 301, and in the process of transferring the wafer cassette 31 or the semiconductor wafer 3OA taken out of the wafer cassette 31, The air sent from the fan 34 is supplied to the exposed portion of the semiconductor wafer 3OA through the chemical filter 35. This is because the exposed semiconductor wafer 3OA was not affected by chemical contaminants.
  • a filter material with a low amount of boron used and a low-organic material-dispersing screen material are used to seal the filter material.
  • a chemical vapor deposition apparatus or the like using a material that does not emit chemical contamination is disposed.
  • Emission of chemical contaminants within the temperature range can be eliminated. Therefore, it is possible to maintain a clean and pure atmosphere in the clean room 1 ⁇ ⁇ clean room 2 etc., compared to the case where semiconductor devices are manufactured using a chemical vapor deposition apparatus using materials that emit chemical pollution. As a result, it is possible to reduce the occurrence of defects, quality deterioration, reliability deterioration, and reduction in the operation rate of the production line due to the contamination of the chemical contaminants.
  • an exposure apparatus 202 as an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 ⁇ clean room 2 uses a material that does not emit chemical contamination.
  • the exposure apparatus 202 shown in FIG. 4 has a casing 60 having a predetermined shape. Inside housing 60 The central area is an exposure area 40, and an optical unit 45 is provided in the exposure area 40 so as to expose a semiconductor wafer 3OA with a transistor circuit, a wiring pattern, and the like. Below the optical unit 45, a wafer mounting table 53 is provided below the optical unit 45. An air conditioner 48 is provided on the right side of the housing 60, and a fan 41 is mounted inside the air conditioner 48.
  • An exposure area ceiling chamber 49 is provided at the ceiling of the exposure area 40, and a ULPA filter 43 is attached to the exposure area ceiling chamber 49.
  • a chemical filter 42 is provided between the upper part of the air conditioner 48 and the exposure area ceiling chamber 49 to clean the circulating air.
  • a filter material having a low boron content and a low-organic-emission sealing material are used to seal the filter material. Materials that do not emit chemical contamination are used.
  • a gallery 54 is provided below the air conditioner 48 so that air is taken in from the exposure area 40 into the air conditioner 48. The gallery 54 is made of louver-shaped material that does not emit chemical pollution.
  • a control unit 46 is provided on the back of the air conditioner 48 described above. The control unit 46 is connected to a covered electric wire 47 to supply power and the like. As the coated electric wire 47, an electric wire coated with a polyolefin or Z and Teflon (trademark) material is used.
  • this exposure apparatus 202 in the process of exposing the semiconductor wafer 3 OA by the optical unit 45, air sent from the fan 41 of the air conditioner 48 is passed through the chemical filter 42 and the ULPA filter 43 to expose the exposure area 4. Feed to 0 and circulate. This is to prevent contamination of the optical unit 45 with chemical contaminants.
  • the housing 60, the gallery 54, and the like are configured by using a material that does not emit chemical contamination.
  • emission of chemical contaminants in the housing 60 can be eliminated. Therefore, the interior of the clean room 1 or the clean room 2 can be maintained in a clean and pure atmosphere, and the chemical contamination can be reduced as compared with the case where the semiconductor wafer 3 OA is exposed by an exposure apparatus using a material which emits chemical contamination. Less occurrence of defects due to material contamination, lower quality, lower reliability, and less reduction in production line availability can do.
  • the enclosure when configuring the third semiconductor manufacturing system, components that may emit chemical contaminants are surrounded by an enclosure, the enclosure is provided with an exhaust port, and an appropriate exhaust means is provided in the exhaust port. It is connected so that the air inside the enclosure can be discharged out of the manufacturing equipment.
  • a semiconductor device is manufactured using the semiconductor manufacturing device 203 in the clean room 1 or the tallen room 2 or the like, and a part of the semiconductor manufacturing device 203 is used.
  • the method includes a step of covering the entire structure with an enclosure, and a step of exhausting chemical contaminants in the enclosure to the outside of the clean room 1 or the tallinn room 2 (second semiconductor manufacturing method).
  • the semiconductor manufacturing apparatus 203 shown in FIG. 5 is a chemical vapor growth apparatus as described in the first embodiment, and control units 37A and 37B are attached to the main body of the apparatus.
  • the control units 37A and 37B are provided so as to cover the whole with a sealed panel case 50 as an example of an enclosure.
  • the sealed panel case 50 has a duct 51 and its duct 51
  • the exhaust means 52 is attached at the end of.
  • a duct 51 leading to the outside of the clean room 1 ⁇ ⁇ ⁇ clean room 2 for example, is connected to the sealed panel case 50, and an exhaust means 52 such as a fan is attached to the middle or end of the duct 51 for control.
  • Units 37 A and 37 B are exposed to chemical contaminants outside Clean Room 1 and Clean Nome 2.
  • the chemical contaminants include at least one of the ionic component, organic matter, and inorganic matter.
  • the sealed panel case (a point of interest) 50 does not need to be a part of the semiconductor manufacturing apparatus 203 as in the control units 37 A and 37 B, but the entire semiconductor manufacturing apparatus. Alternatively, the entire interior may be exhausted by surrounding the space. Exhaust is intended to prevent chemical pollutants emitted from the equipment components from being emitted into the clean room air. As a result, the exhaust destination does not necessarily need to be outside the clean room 1 or clean room 2, etc., so that the exhaust gas is passed through a suitable chemical filter to remove chemical pollutants and returned to the clean room. It does not matter.
  • a material capable of emitting chemical contamination is used for a part of the main unit or the entire control units 37A and 37B. Even if it is unavoidable to use, the closed panel case 50 is attached to the part of the main unit to cover the entire control units 37A and 37B, so that the chemical contaminants in the closed panel case 50 can be removed.
  • the exhaust means 52 By means of the exhaust means 52, the air can be exhausted to the place where the filter is installed outside the clean room or in the tallen room.
  • the interior of the tallen room 1 and the tallen room 2 can be maintained in a pure and pure atmosphere.
  • chemical contaminants that emanate from the semiconductor manufacturing equipment 203 into the clean room air are reduced, and the occurrence of defects due to chemical contaminants, lower quality, lower reliability, and lower production line operation rates are reduced. be able to.
  • the manufacturing cost of the semiconductor device can be reduced.
  • the present invention is very suitable when applied to the manufacture of a liquid crystal display device in a clean room, a semiconductor integrated circuit device, and the like.

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  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
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  • General Engineering & Computer Science (AREA)
  • Ventilation (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)

Abstract

A semiconductor manufacturing system comprises, as shown in Fig. 1, a clean room (1) for manufacturing a semiconductor device and a semiconductor manufacturing apparatus (20) using a chemical contaminantion non-releasing material. The semiconductor manufacturing apparatus (20) is installed in the clean room (1). Thus no chemical contaminants are not released from the semiconductor manufacturing apparatus (20) into the clean room (1) and consequently the inside of the clean room (1) can be kept in a clean, purified environment state. Compared to manufacture of a semiconductor device by using a semiconductor manufacturing apparatus (20) using a chemical contamination releasing material, defectives attributable to contamination by chemical contaminants, quality degradation, reliability degradation, degradation of the working ratio of the production line are low.

Description

明 細 書 半導体製造システム、 半導体製造装置、 半導体製造方法及び半導体装置 技術分野  Description: Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device
本発明は、 クリーンルーム内での半導体集積回路装置や液晶表示装置等の製,造 に適用して好適な半導体製造システム、 半導体製造装置、 半導体製造方法及び半 導体装置に闋する。 詳しくは、 化学汚染非発散性の材料を使用した半導体製造装 置を当該クリーンルーム内に設置して、 清浄純粋な雰囲気の状態に維持されたク リーンルームで半導体装置を製造できるようにしたものである。 背景技術  The present invention relates to a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device suitable for application to manufacture and manufacture of a semiconductor integrated circuit device and a liquid crystal display device in a clean room. More specifically, a semiconductor manufacturing device using a material that does not emit chemical contamination is installed in the clean room so that semiconductor devices can be manufactured in a clean room maintained in a clean and pure atmosphere. is there. Background art
従来から、 半導体集積回路装置や液晶表示装置等を製造する装置 (以下で半導 体製造装置という) は、 サブミクロンの粒子状ダストを排除したタリーンルーム に設置され、 厳密なダスト管理がなされてきた。 しかし近年、 半導体加工の微細 化が進むに伴い、 粒子状のダストだけではなく、 ガス状の気中汚染物質、 いわゆ る化学汚染 (Chemical Contamination) 物質が注目されている。  Conventionally, devices that manufacture semiconductor integrated circuit devices and liquid crystal display devices (hereinafter referred to as semiconductor manufacturing devices) have been installed in a tallin room that eliminates submicron particulate dust, and strict dust management has been performed. Have been. However, in recent years, as semiconductor processing has become finer, not only particulate dust but also gaseous air pollutants and so-called chemical contamination (Chemical Contamination) have been attracting attention.
化学汚染物質は、 NH4 +などのイオン成分、 フタノレ酸ジォクチル (D O P ) な どの有機物、 ホウ素 (B ) などの無機物に分類される。 例えば N +は露光装置 の光学系の曇りの原因となり、 有機物と無機物は酸化膜の特性変化や化学気相成 長 (C VD) 装置における膜付き性の悪化などを招くことが知られている。 これ らのことは、 半導体集積回路装置または液晶表示装置 (以下で単に半導体装置と いう) 等の生産性の低下、 製造歩留まりの低下、 品質および信頼性の低下につな がる。 このため、 クリーンルーム気中の化学汚染物質は大きな問題として認識さ れている。 Chemical contaminants, ionic components such as NH 4 +, Futanore acid Jiokuchiru (DOP) of any organic matter, are classified into inorganic substances such as boron (B). For example, N + causes clouding of the optical system of the exposure equipment, and organic and inorganic substances are known to cause changes in the characteristics of oxide films and deterioration of film deposition in chemical vapor deposition (CVD) equipment. . This leads to a decrease in productivity of semiconductor integrated circuit devices or liquid crystal display devices (hereinafter simply referred to as semiconductor devices), a decrease in manufacturing yield, and a decrease in quality and reliability. For this reason, chemical pollutants in clean room air are recognized as a major problem.
ところで、 半導体装置等の製造工場では、 外気からクリーンルームへのイオン 成分の進入を防ぐために外調機にエアワッシャーを設置したり、 建築部材からの 有機物発生を防ぐために低分子シロキサンの揮散が少ないシリコンシール材を使 用したり、 空調用高性能フィルタ (Ultra Low P enetration F ilter :以下で U L P Aという) からのホウ素 (B ) 発生を防ぐためにホウ素含有の少ない濾材 を採用したフィルタを使用するなどして、 主に建築物おょぴ空調や電気などの建 築設備の面から、 クリーンルーム気中の化学汚染物質の低減に取り組んできてい る。 By the way, in manufacturing plants for semiconductor devices, etc., air washers are installed in external controllers to prevent ionic components from entering the clean room from outside air, and silicon with low volatilization of low-molecular siloxane is used to prevent the generation of organic matter from building components. Use sealing material To prevent the generation of boron (B) from high-performance air conditioning filters (Ultra Low Penetration Filter: ULPA). We are working to reduce chemical pollutants in clean rooms from the perspective of building facilities such as air conditioning and electricity.
しかしながら、 従来方式のクリーンルームや半導体製造装置によれば、 次のよ うな問題がある。  However, according to the conventional clean room and semiconductor manufacturing equipment, there are the following problems.
① 化学汚染物質の低減に配慮した材料で作ったクリーンルームであっても、 そこに半導体製造装置を設置すると、 気中の化学汚染物質の濃度が上昇する。 こ れは、 半導体製造装置の構成材料から化学汚染物質が発散するためであって、 半 導体製造装置の構成材料が、 クリーンルームの気中化学汚染を増加させないとい う観点で選定されていないためである。 例えば、 半導体製造装置に使われる塩化 ビニール被覆の電線からフタル酸エステルが発散し、 シリコンシール材からシロ キサンが発散し、 U L P Aフィルタから D O Pやホウ素 (B ) が発散することが 知られている。  (1) Even if a clean room is made of materials that are designed to reduce chemical pollutants, if semiconductor manufacturing equipment is installed there, the concentration of airborne chemical pollutants will increase. This is because chemical contaminants emanate from the constituent materials of semiconductor manufacturing equipment, and the constituent materials of semiconductor manufacturing equipment have not been selected from the viewpoint of not increasing aerial chemical pollution in clean rooms. is there. For example, it is known that phthalate esters emanate from vinyl chloride-coated wires used in semiconductor manufacturing equipment, siloxanes emanate from silicone sealants, and DOP and boron (B) emanate from ULPA filters.
② また、 クリーンルームの気中化学汚染を増加させないという観点での対策 がなされていないため、 クリーンルームの空気に直接接触する半導体製造装置内 部の被覆電線やシール材から有機物が発散したり、 この装置内部にクリーンエア を送るための空調フィルタから発散したホウ素 (B) が当該装置の隙間からタリ ーンルーム気中に漏出したりして、 クリーンルーム気中の化学汚染を増加させる おそれがある。  (2) In addition, since no measures have been taken to prevent chemical air pollution in the clean room from increasing, organic substances may emanate from the coated wires and sealing materials inside the semiconductor manufacturing equipment that come into direct contact with the air in the clean room. Boron (B) emitted from the air-conditioning filter for sending clean air inside may leak into the air in the tarin room through the gap between the equipment, and increase the chemical contamination in the air in the clean room.
③ クリーンルームに送り込まれたウェハが接触する半導体製造装置の内部の 空気は、 一般にクリーンルームの空気と同一であるから、 クリーンルーム気中の 化学汚染物質の汚染を免れない。 因みに半導体製造装置内で半導体ウェハが露出 している場所にケミカルフィルタを通した空気を送り、 クリーンルーム気中の化 学汚染物質による汚染を避ける仕組みも考えられるが、 半導体製造ラインにある すべての半導体製造装置が同様の対応をしていない限り、 複数の半導体処理工程 (3) Since the air inside the semiconductor manufacturing equipment that comes into contact with the wafers sent into the clean room is generally the same as the air in the clean room, the contamination of chemical contaminants in the clean room air is unavoidable. By the way, a mechanism that sends air through a chemical filter to the place where the semiconductor wafer is exposed in the semiconductor manufacturing equipment to avoid contamination by chemical contaminants in the clean room air can be considered, but all semiconductors in the semiconductor manufacturing line Unless manufacturing equipment has the same response, multiple semiconductor processing steps
^完了するまでの間にタリーンルーム気中の化学汚染物質に汚染されてしまい、 これを避けることは困難である。 In the meantime, the Tallen Room was contaminated with airborne chemical pollutants, It is difficult to avoid this.
④ 半導体製造装置の構成部材が発散する化学汚染物質は、 化学汚染物質を低 減した空気を送り込まれたクリーンルームの部分以外の部分の空気を汚 するお それがある。 従って、 半導体製造装置内部に送り込まれたウェハがその空気と接 触することでウェハ表面が汚染されることになる。  化学 Chemical contaminants emitted from components of semiconductor manufacturing equipment may contaminate air in areas other than the clean room into which air with reduced chemical contaminants has been sent. Therefore, the wafer surface fed into the semiconductor manufacturing apparatus comes into contact with the air, thereby contaminating the wafer surface.
⑤ また、 クリーンルームに送り込む空気の一部をケミカルフィルタを通すな どするには、 初期投資が多くかかり、 またケミカルフィルタの維持管理に手間と コス卜がかかる。 発明の開示  ⑤ In addition, if a part of the air sent into the clean room is passed through a chemical filter, a large initial investment will be required, and the maintenance and management of the chemical filter will be troublesome and costly. Disclosure of the invention
本発明に係る半導体製造システムは、 半導体装置を製造するクリーンルームと、 化学汚染非発散性の材料を使用した半導体製造装置とを備え、 この半導体製造装 置は当該クリーンルーム内に設置されることを特徴とするものである。 この半導 体製造システムによれば、 半導体製造装置からクリーンルームへの化学汚染物質 の発散を無くすことができるので、 クリーンルーム内を清浄純粋な雰囲気の状態 に維持することができる。 従って、 化学汚染発散性の材料を使用した半導体製造 装置を使用して半導体装置を製造する場合に比べて、 化学汚染物質の汚染に起因 する不良発生、 品質低下、 信頼性低下及び、 製造ラインの稼働率低下を少なくす ることができる。 '  A semiconductor manufacturing system according to the present invention includes: a clean room for manufacturing a semiconductor device; and a semiconductor manufacturing device using a material that does not emit chemical pollution. The semiconductor manufacturing device is installed in the clean room. It is assumed that. According to this semiconductor manufacturing system, the emission of chemical contaminants from the semiconductor manufacturing equipment to the clean room can be eliminated, so that the clean room can be maintained in a clean and pure atmosphere. Therefore, compared to the case of manufacturing semiconductor devices using semiconductor manufacturing equipment that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and The reduction in the operating rate can be reduced. '
本発明に係る第 1の半導体製造装置は半導体装置を製造する装置であって、 装 置本体と、 この装置本体に取り付けられ又は Z及び当該装置本体に接続された装 置部品とを備え、 この装置本体又は Z及び装置部品には化学汚染非発散性の材料 を使用することを特徴とするものである。 この第 1の半導体製造装置によれば、 当該装置からクリーンルームへの化学汚染物質の発散を無くすことができるので、 クリーンルーム内を清浄純粋な雰囲気の状態に維持することができる。 従って、 化学汚染発散性の材料を使用した半導体製造装置を使用して半導体装置を製造す る場合に比べて、 化学汚染物質の汚染に起因する不良発生、 品質低下、 信頼性低 下及ぴ、 製造ラインの稼働率低下を少なくすることができる。 本発明に係る第 2の半導体製造装置は半導体装置を製造する装置であって、 装 置本体と、 この装置本体に取り付けられ又は/及び当該装置本体に接続された装 置部品と、 この本体装置又は 及び装置部品の一部あるいは全部を覆う包囲体と、 この包囲体内を排気する排気手段とを備えることを特徴とするものである。 この 第 2の半導体製造装置によれば、 本体装置又は/及び装置部品の一部あるいは全 部に化学汚染発散性の材料をやむを得ず使用した場合でも、 排気手段によって化 学汚染物質をクリーンルーム外へ排気することができるので、 クリーンルーム内 を清浄純粋な雰囲気の状態に維持することができる。 A first semiconductor manufacturing apparatus according to the present invention is an apparatus for manufacturing a semiconductor device, comprising: a device main body; and a device component attached to the device main body or connected to Z and the device main body. The equipment itself or Z and equipment parts are characterized by using materials that do not emit chemical pollution. According to the first semiconductor manufacturing apparatus, since the emission of chemical contaminants from the apparatus to the clean room can be eliminated, the clean room can be maintained in a clean and pure atmosphere. Therefore, as compared with the case where a semiconductor device is manufactured using a semiconductor manufacturing device using a material that emits chemical pollution, defects caused by contamination of chemical contaminants, quality deterioration, reliability deterioration, It is possible to reduce a decrease in the operation rate of the production line. A second semiconductor manufacturing apparatus according to the present invention is an apparatus for manufacturing a semiconductor device, comprising: a device main body; a device component attached to and / or connected to the device main body; Or an enclosure that covers a part or the whole of the device components, and an exhaust unit that exhausts the enclosure. According to the second semiconductor manufacturing apparatus, even when a part or all of the main unit and / or the parts of the main unit are unavoidably used, the chemical contaminants are exhausted by the exhaust means to the outside of the clean room. The clean room can be maintained in a clean and pure atmosphere.
本発明に係る第 1の半導体製造方法は予め化学汚染非発散性の材料を使用した 半導体製造装置を製造し、 この半導体製造装置をクリーンルーム内に設置し、 ク リーンルーム内で半導体製造装置を使用して半導体装置を製造することを特徴と するものである。 この第 1の半導体製造方法によれば、 清浄純粋な雰囲気の状態 に維持されたクリーンルームで半導体装置を製造することができる。 従って、 ク リーンルーム内で化学汚染発散性の材料を使用した半導体製造装置を使用して半 導体装置を製造する場合に比べて、 化学汚染物質に依存されない高品質かつ高信 頼度の半導体装置を製造することができる。 半導体装置の製造コストを低減でき る。  The first semiconductor manufacturing method according to the present invention manufactures a semiconductor manufacturing apparatus using a material which does not emit chemical contamination in advance, installs the semiconductor manufacturing apparatus in a clean room, and uses the semiconductor manufacturing apparatus in a clean room. And manufacturing the semiconductor device. According to the first semiconductor manufacturing method, a semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Therefore, compared to the case where semiconductor devices are manufactured in a clean room using semiconductor manufacturing devices that use materials that emit chemical contamination, high-quality and highly reliable semiconductor devices that are not dependent on chemical contaminants. Can be manufactured. Semiconductor device manufacturing costs can be reduced.
本発明に係る第 2の半導体製造法はクリーンルーム内で半導体製造装置を使用 して半導体装置を製造する方法であって、 半導体製造装置の一部あるいは全部を 包囲体で覆う工程と、 この包囲体内の化学汚染物質をクリーンルーム外へ排気す る工程とを有することを特徴とするものである。 この第 2の半導体製造方法によ れば、 半導体製造装置の一部あるいは全部に化学汚染発散性の材料が使用された 場合でも、 包囲体内の化学汚染物質をクリーンルーム外へ排気できるので、 クリ ーンルーム内を清浄純粋な雰囲気の状態に維持することができる。  A second semiconductor manufacturing method according to the present invention is a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus in a clean room, comprising the steps of: covering a part or all of the semiconductor manufacturing apparatus with an enclosure; Exhausting the chemical pollutants out of the clean room. According to the second semiconductor manufacturing method, even when a material that emits chemical contamination is used for a part or the whole of the semiconductor manufacturing equipment, the chemical contaminants in the enclosure can be exhausted to the outside of the clean room. The inside can be maintained in a clean and pure atmosphere.
本発明に係る半導体装置は半導体基板と、 この半導体基板上に形成された電子 回路素子とを備え、 化学汚染非発散性の材料を使用して製造された半導体製造装 置により半導体基板及び/又は電子回路素子を製造されて成ることを特徴とする ものである。 この半導体装置によれば、 化学汚染発散性の材料を用いた半導体製 造装置を使用して半導体装置を製造する場合に比べて、 化学汚染物質に依存され ない高品質かつ高信頼度の半導体装置を提供することができる。 図面の簡単な説明 A semiconductor device according to the present invention includes a semiconductor substrate and an electronic circuit element formed on the semiconductor substrate, and the semiconductor substrate and / or the semiconductor device is manufactured by using a semiconductor manufacturing device manufactured using a material that does not emit chemical contamination. The electronic circuit element is manufactured. According to this semiconductor device, a semiconductor device using a material that emits chemical pollution is manufactured. It is possible to provide a high-quality and high-reliability semiconductor device that is not dependent on chemical contaminants as compared with a case where a semiconductor device is manufactured using a manufacturing apparatus. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明に係る第 1の実施形態としての半導体製造システム 1 0 0の構 成例を示す模式図である。  FIG. 1 is a schematic diagram showing a configuration example of a semiconductor manufacturing system 100 as a first embodiment according to the present invention.
図 2は、 本発明に係る第 2の実施形態としての半導体製造システム 2 0 0の構 成例を示すクリーンルームの模式図である。  FIG. 2 is a schematic diagram of a clean room showing a configuration example of a semiconductor manufacturing system 200 as a second embodiment according to the present invention.
図 3は、 本発明に係る第 1の実施 ί列としての半導体製造装置 2 0 1の構成例を 示す模式図である。  FIG. 3 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 201 as a first embodiment of the present invention.
図 4は、 本発明に係る第 2の実施例としての半導体製造装置 2 0 2の構成例を 示す模式図である。  FIG. 4 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 202 as a second embodiment according to the present invention.
図 5は、 本発明に係る第 3の実施例としての半導体製造装置 2 0 3の構成例を 示す模式図である。 発明を実施するための最良の形態  FIG. 5 is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus 203 as a third embodiment according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
この発明は、 クリーンルームを清浄純粋な雰囲気の状態に維持できるようにし た半導体製造システム、 半導体製造装置、 半導体製造方法及び半導体装置を提供 することを目的とするものである。  An object of the present invention is to provide a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device that can maintain a clean room in a clean and pure atmosphere.
以下、 図面を参照しながら、 この発明に係る半導体製造システム、 半導体製造 装置、 半導体製造方法及び半導体装置の一実施の形態について説明をする。  Hereinafter, an embodiment of a semiconductor manufacturing system, a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and a semiconductor device according to the present invention will be described with reference to the drawings.
( 1 ) 第 1の実施形態  (1) First embodiment
この実施形態では、 化学汚染非発散性の材料を使用した半導体製造装置を当該 クリーンルーム内に設置して、 清浄純粋な雰囲気の状態に維持されたクリーンル ームで半導体装置を製造できるようにしたものである。 つまり、 この半導体製造 システム 1 0 0では予め化学汚染非発散性の材料を使用した半導体製造装置 2 0 を製造し、 この半導体製造装置 2 0をクリーンルーム 1内に設置し、 クリーンル ーム 1内で半導体製造装置 2 0を使用して半導体装置を製造するようになされる (第 1の半導体製造方法) 。 In this embodiment, a semiconductor manufacturing apparatus using a material that does not emit chemical contamination is installed in the clean room, so that the semiconductor device can be manufactured in a clean room maintained in a clean and pure atmosphere. Things. In other words, the semiconductor manufacturing system 100 previously manufactures a semiconductor manufacturing device 20 using a material that does not emit chemical contamination, and installs the semiconductor manufacturing device 20 in the clean room 1 to clean the semiconductor room. To be used to manufacture semiconductor devices using semiconductor manufacturing equipment 20 (First semiconductor manufacturing method).
図 1に示す半導体製造システム 1 0 0は半導体集積回路装置または液晶表示装 置 (以下で単に半導体装置という) 等を製造するシステムである。 このシステム The semiconductor manufacturing system 100 shown in FIG. 1 is a system for manufacturing a semiconductor integrated circuit device or a liquid crystal display device (hereinafter, simply referred to as a semiconductor device). This system
1 0 0には清浄空気循環型のクリーンルーム 1が備えられている。 このクリーン ルーム 1は天井 1 6、 床 1 4及ぴ壁 1 0 A、 1 0 Bを有しており、 図示しないが、 もちろん、 作業者 9が出入りする出入口を有している。 クリーンルーム 1の天井 1 6にはファンフィルタュ-ット (F F U) 1 3が配置され、 天井 1 6の裏側は 天井プレナムチャンバ 1 1となっている。 100 is provided with a clean air circulation type clean room 1. The clean room 1 has a ceiling 16, a floor 14, and walls 10 A and 10 B, and although not shown, of course, has an entrance through which a worker 9 enters and exits. In the ceiling 16 of the clean room 1, a fan filter unit (FFU) 13 is disposed, and the back side of the ceiling 16 is a ceiling plenum chamber 11.
このクリーンルーム 1の床 1 4には通気用の複数の開口部 1 4 Aが設けられ、 床 1 4の裏側には床構造部材 1 5が設けられ、 床 1 4の裏側は床下リターンェリ ァ 1 2となっている。 上述の天井プレナムチヤンバ 1 1と床下リターンエリア 1 2との間は空調機 1 7とダクト 8 A, 8 Bとを通じて結ばれている。 このダクト 8 A, 8 Bの途中には外調機 1 8が取り付けられ、 この外調機 1 8にはエアヮッ シャ一 1 9が内蔵され、 外気を取り込んでクリーンルーム 1へ補充する空気を清 浄ィ匕するようになされる。 外調機 1 8で清浄化された空気は、 空調機 1 7によつ て天井プレナムチヤンバ 1 1に送り込まれ、 ファンフィルタュニット 1 3によつ てクリーンルーム 1に吹き出され、 床 1 4の通気用の開口部 1 4 Aを通って床下 リターンェリア 1 2に吸引される。  The floor 14 of the clean room 1 is provided with a plurality of openings 14 A for ventilation, the floor 14 is provided with floor structural members 15 behind the floor 14, and the floor 14 is provided with a return floor below the floor 14. It has become. The above-mentioned ceiling plenum chanamba 11 and the underfloor return area 12 are connected through an air conditioner 17 and ducts 8A and 8B. An air conditioner 18 is installed in the middle of the ducts 8A and 8B. The air conditioner 18 has a built-in air washer 19, which purifies the air to take in outside air and replenish it to the clean room 1. It is made to make a dagger. The air purified by the air conditioner 18 is sent to the ceiling plenum chamber 11 by the air conditioner 17 and blown out to the clean room 1 by the fan filter unit 13 to ventilate the floor 14. It is sucked into the underfloor return area 12 through the opening 14A.
クリーンルーム 1の空気は、 空調機 1 7によって天井プレナムチャンパ 1 1→ ファンフィ /レタュニット 1 3→クリーンルーム 1の内部→開口部 1 4 A→床下リ ターンエリア 1 2→ダクト 8 A, 8 Bを循環するようになされる。 清浄化空気は 外部からクリーンルーム 1へ補充される。 ここまでの建築構造は従来方式のクリ ーンルームと同じ構成を採ることができる。  The air in the clean room 1 is circulated by the air conditioner 17 through the ceiling plenum champ 1 1 → fanfi / reunit 13 → inside the clean room 1 → opening 14 A → underfloor return area 1 2 → ducts 8 A, 8 B It is done as follows. The clean air is supplied to the clean room 1 from outside. The building structure up to this point can adopt the same configuration as the conventional clean room.
この半導体製造システム 1 0 0では、 当該クリーンルーム 1内に化学汚染非発 散性の材料を使用した半導体製造装置 2 0が設置されており、 この製造装置 2 0 は半導体装置を製造するために本体装置又は Z及び装置部品から構成されている。 半導体製造装置 2 0は例えば装置本体と、 この装置本体に取り付けられ又は Z及 ぴ当該装置本体に接続された装置部品とを備え、 この装置本体又は Z及び装置部 品には化学汚染非発散性の材料が使用される。 この化学汚染非発散性の材料には、 ポリオレフイン系、 テフロン (商標) 系、 ポリエチレンテレフタレート系又はノ 及びポリカーボネート系の素材から成るものが使用される (第 1の半導体製造装 置) 。 In this semiconductor manufacturing system 100, a semiconductor manufacturing apparatus 20 using a material that does not emit chemical pollution is installed in the clean room 1, and the manufacturing apparatus 200 is used for manufacturing a semiconductor device. It is composed of equipment or Z and equipment parts. The semiconductor manufacturing apparatus 20 includes, for example, an apparatus main body and Z and / or device parts attached to the apparatus main body or connected to the apparatus main body. The product is made of a material that does not emit chemical contamination. As the material which does not emit chemical contamination, a material composed of a polyolefin, Teflon (trademark), polyethylene terephthalate, or phenol or polycarbonate material is used (first semiconductor manufacturing equipment).
この半導体製造装置 2 0は例えば、 図示しない筐体、 被覆電線、 シール材、 樹 脂製パネル、 樹脂製シート、 パンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接 着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管のうち少なく とも一つ又はこれらを組み合わせた本体装置又は/及び装置部品を有している。 この例では、 この本体装置又はノ及ぴ装置部品を構成する、 筐体、 被覆電線、 シ 一ル材、 樹脂製パネル、 樹脂製シート、 バンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管の うち少なくとも一つ又はこれらの全部に、 化学汚染非発散性の材料を使用したも のである。 当該クリーンルーム 1内への化学汚染物質の発散を無くすようにする ためである。  The semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of resist, adhesive tape, and piping, or a combination of these, has a main device and / or device component. In this example, the housing, covered electric wire, sealing material, resin panel, resin sheet, band heater, paint, air-conditioning filter, heat insulating material, adhesive At least one or all of printed circuit boards, printed circuit board resist, adhesive tape, and piping are made of materials that do not emit chemical contamination. This is to prevent emission of chemical pollutants into the clean room 1 concerned.
半導体製造装置 2 0は露光装置、 塗布装置、 現像装置、 洗浄装置、 測定装置、 化学気相成長装置、 プラズマ製膜装置、 拡散炉装置、 エッチング装置、 メツキ装 置、 ラッピング装置、 アツシング装置、 イオン注入装置、 化学機械的研磨装置、 搬送装置、 保管装置のうち少なくとも一つを構成するものである。 このシステム 1 0 0で上述した半導体製造装置 2 0に例えば、 被覆電線が使用される場合であ つて、 この被覆電線にはポリオレフイン系又は/及びテフロン (商標) 系の材料 で被覆した電線が使用されている。 この半導体製造装置 2 0では従来方式の塩化 ビニール被覆の電線の代わりに、 可塑剤等を含んでいないポリォレフィン系材料 やテフロン (商標) 系材料で被覆した電線を使用することにより、 当該クリーン ルーム 1内への化学汚染物質の発散を無くすようになされる。  Semiconductor manufacturing equipment 20 includes exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, plasma film-forming equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, and ions. It constitutes at least one of an injection device, a chemical mechanical polishing device, a transport device, and a storage device. For example, when a coated electric wire is used in the semiconductor manufacturing apparatus 20 described above in the system 100, an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been. In this semiconductor manufacturing apparatus 20, instead of a conventional vinyl chloride-coated wire, a wire coated with a polyolefin-based material or a Teflon (trademark) -based material containing no plasticizer or the like is used, so that the clean room 1 It is designed to eliminate the emission of chemical contaminants into the interior.
また、 半導体製造装置 2 0にフィルタが使用される場合であって、 このフィル タには低ホゥ素使用量の濾材及ぴ濾材をシールするために低有機物発散性のシー ル材が使用される。 更に、 半導体製造装置 2 0に透明樹脂製パネルが使用される 場合であって、 有機物発散の多い透明塩化ビニール板の代わりに、 ポリエチレン テレフタレート (P E T) 板あるいはポリカーボネート (P C) 板が使用される。 その際の板材のシールには一般のシール剤の代わりに、 シロキサンの揮散を低減 した低シロキサン揮散性のシール剤が使用される。 In the case where a filter is used in the semiconductor manufacturing apparatus 20, a low-boron filter material and a low-organic-emission material are used to seal the filter material. . Further, in the case where a transparent resin panel is used in the semiconductor manufacturing apparatus 20, a polyethylene sheet is used instead of a transparent vinyl chloride sheet which emits a lot of organic matter. Terephthalate (PET) plates or polycarbonate (PC) plates are used. In this case, instead of a general sealant, a sealant with low siloxane volatilization, which reduces the volatilization of siloxane, is used for sealing the plate material.
いずれも、 当該クリーンルーム 1内への化学汚染物質の発散を無くすためであ る。 これらは一例であり、 これ以外にも、 化学汚染発散性の材料を発散が少ない、 又は全く発散しない非発散性の材料に置き換えることによって、 半導体製造装置 2 0からの化学汚染発散を低減することができる。 更にまた、 半導体製造装置 2 0にファンやステージ等を駆動するための駆動部が使用される場合であって、 こ の駆動部には密閉型のモータが使用され、 該モータは充分にエージングした後に 使用される。 当該クリーンルーム 1内への化学汚染物質の発散を無くすためであ る。  In either case, the emission of chemical pollutants into the clean room 1 is eliminated. These are just examples.In addition, reducing the emission of chemical contamination from the semiconductor manufacturing equipment 20 by replacing the material that emits chemical contamination with a material that emits little or no emission at all. Can be. Furthermore, a case where a drive unit for driving a fan, a stage, or the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 1.
なお、 クリーンルーム自体を化学汚染非発散性の材料を使用して建築するよう にしてもよレヽ。 例えば、 床材 1 4、 床構造部材 1 5、 天井 1 6及び壁 1 O A, 1 0 Bの表面の材料又は塗装材料には化学汚染非発散性の材料を使用する。 この化 学汚染非発散性の材料は塗料材料の他に、 クリーンルーム 1への照明配線、 仕切 用の樹脂製パネル、 パネル間のシール材、 樹脂製シート、 空調用フィルタ、 断熱 材、 接着剤、 接着テープ、 配管にも化学汚染非発散性の材料が使用される。 例え ば、 ファンフィルタユニット 1 3に内蔵される U L P Aフィルタには低ホウ素含 有性の濾材を使用したフィルタが使用され、 そのシール材には有機物発散の少な い材料を使用したものが適用される。 こうした構成を採ることで、 化学汚染物質 を配慮しない材料で作ったクリーンルームよりも、 新築クリーンルームの気中の 化学汚染物質を大幅に低減することができる。  The clean room itself may be constructed using materials that do not emit chemical pollution. For example, a material that does not emit chemical pollution is used as a material or a coating material of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 1OA and 10B. In addition to paint materials, this non-contaminating material is not only paint materials, but also lighting wiring to the clean room 1, resin panels for partitions, sealing materials between panels, resin sheets, air-conditioning filters, heat insulating materials, adhesives, Adhesive tapes and pipes are also made of materials that do not emit chemical contamination. For example, a filter using a low boron-containing filter medium is used for the ULPA filter built into the fan filter unit 13 and a filter that uses a material that emits little organic matter is used for the seal material. . By adopting such a configuration, it is possible to significantly reduce the amount of airborne chemical pollutants in newly constructed clean rooms compared to clean rooms made of materials that do not consider chemical pollutants.
このように、 本発明に係る第 1の実施形態としての半導体製造システム 1 0 0 によれば、 半導体製造装置 2 0の構成材料を化学汚染発散性の材料から化学汚染 非発散性の材料に置き換えることで、 半導体製造装置 2 0からクリーンルーム 1 への化学汚染物質の発散を無くすことができる。 従って、 クリーンルーム 1内を 清浄純粋な雰囲気の状態に維持することができる。 化学汚染発散性の材料を使用 した半導体製造装置 2 0を使用して半導体装置を製造する場合に比べて、 化学汚 染物質の汚染に起因する不良発生、 品質低下、 信頼性低下及び、 製造ラインの稼 働率低下を少なくすることができる。 As described above, according to the semiconductor manufacturing system 100 as the first embodiment of the present invention, the constituent materials of the semiconductor manufacturing apparatus 20 are replaced from materials that emit chemical contamination to materials that do not emit chemical contamination. Thus, emission of chemical pollutants from the semiconductor manufacturing apparatus 20 to the clean room 1 can be eliminated. Therefore, the clean room 1 can be maintained in a clean and pure atmosphere. Compared to manufacturing semiconductor devices using semiconductor manufacturing equipment 20 that uses materials that emit chemical pollution, It is possible to reduce the occurrence of defects, deterioration in quality, deterioration in reliability, and reduction in the operation rate of the production line due to contamination of dyes.
この半導体製造システム 1 0 0によって製造される半導体装置によれば、 例え ば半導体基板と、 この半導体基板上に形成された電子回路素子とを備え、 化学汚 染非発散性の材料を使用して製造された半導体製造装置 2 0により半導体基板及 び/又は電子回路素子を製造されて成るものである。 この半導体製造装置 2 0で 液晶表示装置を製造する場合は、 上述の電子回路素子は液晶表示素子が対象とな る。 このようなシステム 1 0 0で製造された半導体装置によれば、 化学汚染発散 性の材料を使用した半導体製造装置 2 0を使用して半導体装置を製造する場合に 比べて、 化学汚染物質に依存されない高品質かつ高信頼度の半導体装置を歩留ま り良く提供することができる。  According to the semiconductor device manufactured by the semiconductor manufacturing system 100, for example, a semiconductor substrate is provided, and an electronic circuit element formed on the semiconductor substrate is provided. A semiconductor substrate and / or an electronic circuit element are manufactured by the manufactured semiconductor manufacturing apparatus 20. When a liquid crystal display device is manufactured by the semiconductor manufacturing apparatus 20, the above-mentioned electronic circuit element is a liquid crystal display element. According to the semiconductor device manufactured using such a system 100, the semiconductor device is more dependent on chemical contaminants than when the semiconductor device is manufactured using a semiconductor manufacturing device 20 using a material that emits chemical pollution. It is possible to provide a high-quality and high-reliability semiconductor device which is not performed with high yield.
また、 新たにクリーンルーム 1を建築する場合、 例えばケミカルフィルタなど を使用して空気を清浄化する空気清浄化機構にかかる初期投資を低減することが でき、 従来方式の空気清浄化機構のランニングコストに比べて、 本発明では、 半 導体製造装置 2 0の構成部材の一部を変更する、 好ましくはタリーンルーム 1の 建築部材を変更する等のわずかな投資増加で済むようになる。  Also, when constructing a new clean room 1, the initial investment for an air purifying mechanism that purifies air using, for example, a chemical filter can be reduced, and the running cost of the conventional air purifying mechanism can be reduced. In comparison, in the present invention, a slight increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the tallen room 1, etc., is sufficient.
この実施形態では化学汚染非発散性の材料に関して、 ポリオレフィン系、 テフ ロン (商標) 系、 ポリエチレンテレフタレート系又はノ及びポリカーボネート系 の素材について説明したが、 これに限られることはなく、 化学汚染非発散†生の材 料に関してはガスクロマトグラフなどの分析によつて新たな材料を見 ヽだすこと ができる。  In this embodiment, a polyolefin-based material, a Teflon (trademark) -based, a polyethylene terephthalate-based or a polycarbonate-based material has been described with respect to the material that does not emit chemical contamination. However, the present invention is not limited to this. † For raw materials, new materials can be found by analysis such as gas chromatography.
( 2 ) 第 2の実施形態  (2) Second embodiment
この実施形態では図 2に示すべィ方式のクリーンルーム 2において化学汚染非 発散性の材料を使用した半導体製造装置 2 0が配置されるものである。 なお、 第 1の実施形態と同じ符号及ぴ同じ名称のものは同じ機能を有するためその説明を 省略する。  In this embodiment, a semiconductor manufacturing apparatus 20 using a chemical-contamination non-dispersing material is disposed in a bay-type clean room 2 shown in FIG. Note that components having the same reference numerals and the same names as those in the first embodiment have the same functions, and a description thereof will be omitted.
図 2に示すクリーンルーム 2には作業域を区切るパーテーション 2 4が設けら れている。 この作業域の天井には作業域天井チャンバ 2 1が設けられており、 天 1ϋ The clean room 2 shown in FIG. 2 is provided with partitions 24 that separate the work area. At the ceiling of this work area, a work area ceiling chamber 21 is provided. 1ϋ
井プレナムチャンバ 1 1内にはダクト 8 Gが配置されている。 このパーテーショ ン 2 4により区切られた作業域は作業通路 1 O A及ぴメンテナンスエリア 2 3で ある。 このシステム 2 0 0で空調機 1 7及び外調機 1 8に取り付けられたダクト 8 Bは第 1の実施形態と異なり、 ダクト 8 Cと天井プレナムチャンパ 1 1とに分 岐されている。 ダクト 8 Bの一方はケミカルフィルタ 2 2を通してダクト 8 Cに 接続されており、 その他方は天井プレナムチャンパ 1 1に接続されている。 外調機 1 8で清浄化された空気は空調機 1 7によって天井プレナムチャンパ 1 1に送り込まれ、 ファンフィルタュニット 1 3によってメンテナンスエリア 2 3 に吹き出され、 床 1 4の通気用の開口部 1 4 Aを通って床下リターンエリア 1 2 に吸引される。 メンテナンスエリア 2 3の空気は空調機 1 7によってダクト 8 B →天井プレナムチャンパ 1 1→ファンフイノレタュニット 1 3→メンテナンスエリ ァ内→開口部 1 4 A→床下リターンエリア 1 2→ダクト 8 A, 8 Bを循環するよ うになされる。 A duct 8 G is arranged in the well plenum chamber 11. The work area divided by the partition 24 is a work passage 1OA and a maintenance area 23. Unlike the first embodiment, the duct 8B attached to the air conditioner 17 and the air conditioner 18 in this system 200 is divided into a duct 8C and a ceiling plenum champer 11. One of the ducts 8B is connected to a duct 8C through a chemical filter 22, and the other is connected to a ceiling plenum champer 11. The air cleaned by the air conditioner 18 is sent to the ceiling plenum champ 11 by the air conditioner 17, blown out to the maintenance area 23 by the fan filter unit 13, and the ventilation opening of the floor 14 is provided. It is sucked into the underfloor return area 1 2 through 14 A. Air in maintenance area 2 3 is ducted by air conditioner 17 7 B 8 → ceiling plenum champ 1 1 → fan fin unit 1 3 → inside maintenance area → opening 14 A → return area under floor 1 2 → duct 8 A , 8B.
このメンテナンスエリア 2 3には半導体製造装置 2 0が配置されており、 その 正面に操作部が設けられている。 この操作部が見えている領域、 すなわち主に作 業者 9が通行する通路部 1 0 Cには、 タリーンルーム 2の空気が空調機 1 7によ つてダクト 8 B→ケミカルフィルタ 2 2→ダクト 8 C→作業域天井チヤンバ 2 1 —作業通路内→開口部 1 4 A→床下リターンエリア 1 2→ダクト 8 A, 8 Bを循 環するようになされる。 清浄ィ匕空気は外部からメンテナンスエリア 2 3、 作業通 路 1 0 C等へ補充される。 ここまでの建築構造は従来のべィ方式のクリーンルー ムと同じ構成を採ることができる。  The semiconductor manufacturing apparatus 20 is arranged in the maintenance area 23, and an operation unit is provided in front of the semiconductor manufacturing apparatus 20. In the area where this operation unit is visible, that is, in the passage section 10C through which the operator 9 mainly passes, the air in the taleen room 2 is supplied by the air conditioner 17 to the duct 8B → the chemical filter 22 → the duct. 8 C → Work area ceiling chamber 2 1 — Inside work passage → Opening 14 A → Underfloor return area 1 2 → Ducts 8 A and 8 B are circulated. The clean air is replenished from the outside to the maintenance area 23, the work channel 10C, and the like. The building structure up to this point can adopt the same configuration as the conventional bay-type clean room.
この半導体製造システム 2 0 0では、 メンテナンスエリア 2 3及び作業通路 1 0 C等を構成するクリーンルーム 2内に、 化学汚染非発散性の材料を使用した半 導体製造装置 2 0が設置されており、 この製造装置 2 0も第 1の実施形態と同様 にして半導体装置を製造するために本体装置又は 及ぴ装置部品から構成されて いる。 半導体製造装置 2 0を構成する装置本体又は Z及び装置部品には化学汚染 非発散性の材料が使用される。 この化学汚染非発散性の材料には第 1の実施形態 と同様にしてポリオレフィン系、 テフロン (商標) 系、 ポリエチレンテレフタレ 一ト系又は Z及びポリカーボネート系の素材から成るものが使用される。 In the semiconductor manufacturing system 200, a semiconductor manufacturing apparatus 20 using a material that does not emit chemical contamination is installed in a clean room 2 that includes a maintenance area 23 and a work passageway 10C. This manufacturing apparatus 20 is also composed of a main body device and / or other device parts for manufacturing a semiconductor device in the same manner as in the first embodiment. Non-contaminating, non-contaminating materials are used for the main body or Z and the parts of the semiconductor manufacturing apparatus 20. In the same manner as in the first embodiment, polyolefin-based, Teflon-based, polyethylene terephthalate Those made of mono- or Z- and polycarbonate-based materials are used.
この半導体製造装置 2 0は例えば、 図示しない筐体、 被覆電線、 シール材、 樹 脂製パネル、 樹脂製シート、 パンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接 着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管のうち少なく とも一つ又はこれらを組み合わせた本体装置又は 及び装置部品を有して 、る。 この例でも、 本体装置又はノ及ぴ装置部品を構成する筐体、 被覆電線、 シール材、 樹脂製パネル、 樹脂製シート、 バンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管のうち少な くとも一つ又はこれらの全部に、 化学汚染非発散性の材料を使用したものである。 当該メンテナンスエリア 2 3や作業通路 1 0 C等への化学汚染物質の発散を無く すようにするためである。  The semiconductor manufacturing apparatus 20 includes, for example, a casing (not shown), a covered wire, a sealing material, a resin panel, a resin sheet, a pan heater, a paint, an air-conditioning filter, a heat insulating material, an adhesive, a printed circuit board, and a printed circuit board. At least one of the resist, the adhesive tape, and the piping or a main unit or a device component obtained by combining them is provided. In this example, too, the chassis that constitutes the main unit or the components of the main unit, covered wires, sealing materials, resin panels, resin sheets, band heaters, paint, air-conditioning filters, heat insulating materials, adhesives, printed circuit boards, At least one or all of the printed circuit board resist, adhesive tape, and piping are made of materials that do not emit chemical contamination. This is to prevent the emission of chemical pollutants into the maintenance area 23 and the work passage 10C.
半導体製造装置 2 0は第 1の実施形態と同様にして、 露光装置、 塗布装置、 現 像装置、 洗浄装置、 測定装置、 化学気相成長装置、 プラズマ製膜装置、 拡散炉装 置、 エツチング装置、 メッキ装置、 ラッピング装置、 アツシング装置、 ィォン注 入装置、 化学機械的研磨装置、 搬送装置、 保管装置のうち少なくとも一つを構成 するものである。 このシステム 2 0 0で上述した半導体製造装置 2 0に例えば、 被覆電線が使用される場合であって、 この被覆電線にはポリオレフイン系又は/ 及びテフロン (商標) 系の材料で被覆した電線が使用されている。  As in the first embodiment, the semiconductor manufacturing apparatus 20 includes an exposure apparatus, a coating apparatus, an imaging apparatus, a cleaning apparatus, a measuring apparatus, a chemical vapor deposition apparatus, a plasma film forming apparatus, a diffusion furnace apparatus, and an etching apparatus. It constitutes at least one of a plating device, a lapping device, an asshing device, an ion pouring device, a chemical mechanical polishing device, a transport device, and a storage device. For example, in the case where a coated electric wire is used in the semiconductor manufacturing apparatus 200 described above in this system 200, an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used as the coated electric wire. Have been.
また、 半導体製造装置 2 0にフィルタが使用される場合であって、 このフィル タには低ホウ素使用量の濾材及び濾材をシールするために低有機物発散性のシー ル材が使用される。 更に、 半導体製造装置 2 0に透明樹脂製パネルが使用される 場合であって、 有機物発散の多い透明塩化ビニール板の代わりに、 ポリエチレン テレフタレート (P E T) 板あるいはポリカーボネート (P C) 板が使用される。 その際の板材のシールには一般のシール剤の代わりに、 シロキサンの揮散を低減 した低シロキサン揮散性のシール剤が使用される。  In the case where a filter is used in the semiconductor manufacturing apparatus 20, a filter medium using a low amount of boron and a sealant having low organic substance emission are used for sealing the filter medium. Further, when a transparent resin panel is used in the semiconductor manufacturing apparatus 20, a polyethylene terephthalate (PET) plate or a polycarbonate (PC) plate is used instead of a transparent vinyl chloride plate that emits a large amount of organic substances. In this case, instead of a general sealant, a sealant with low siloxane volatilization, which reduces the volatilization of siloxane, is used for sealing the plate material.
いずれも、 当該クリーンルーム 2内への化学汚染物質の発散を無くすためであ る。 これらは一例であり、 これ以外にも、 化学汚染物質の発散がある材料を発散 が少ないまたは全く発散しない非発散性の材料に置き換えることによって、 半導 体製造装置 2 0からの化学汚染発散を低減することができる。 更にまた、 半導体 製造装置 2 0にファンやステージ等を駆動するための駆動部が使用される場合で あって、 この駆動部には密閉型のモータが使用され、 該モータは充分にエージン グした後に使用される。 当該クリーンルーム 2内への化学汚染物質の発散を無く すためである。 In either case, the emission of chemical pollutants into the clean room 2 is eliminated. These are just examples, and other alternatives can be achieved by replacing materials that emit chemical contaminants with non-emissive materials that emit little or no emissions. The emission of chemical contamination from the body manufacturing apparatus 20 can be reduced. Furthermore, a case where a drive unit for driving a fan, a stage, and the like is used in the semiconductor manufacturing apparatus 20 is used, and a sealed motor is used for this drive unit, and the motor is sufficiently aged. Used later. This is to eliminate the emission of chemical pollutants into the clean room 2.
なお、 クリーンルーム自体を化学汚染非発散性の材料を使用して建築するよう にしてもよい。 例えば、 床材 1 4、 床構造部材 1 5、 天井 1 6及び壁 1 0 A、 1 0 Bの表面の材料又は塗装材料には化学汚染非発散性の材料を使用する。 この床 材 1 4、 床構造部材 1 5、 天井 1 6及び壁 1 0 A、 1 0 Bの他に、 ダクト 8 Cや パーテーシヨン 2 4等も化学汚染非発散性の材料を使用する。 もちろん、 メンテ ナンスエリア 2 3や作業通路 1 0 Cへの照明配線、 仕切用の樹脂製パネル、 パネ ノレ間のシ一/レ材、 樹脂製シート、 空調用フイノレタ、 断熱材、 接着剤、 接着テープ、 配管にも化学汚染非発散性の材料が使用される。 こうした構成を採ることで、 化 学汚染物質を配慮しない材料で作ったクリーンルームよりも、 新築クリーンルー ムの気中の化学汚染物質を大幅に低減することができる。  The clean room itself may be constructed using materials that do not emit chemical pollution. For example, a material that does not emit chemical pollution is used as a material for the surface of the flooring material 14, the floor structural member 15, the ceiling 16 and the walls 10A and 10B or a coating material. In addition to the floor material 14, floor structural members 15, ceiling 16 and walls 10A and 10B, the duct 8C, the partition 24, and the like also use materials that do not emit chemical contamination. Of course, lighting wiring to the maintenance area 23 and the work passage 10C, resin panels for partitioning, material for panels between panels, resin sheets, finoleta for air conditioning, heat insulating materials, adhesives, bonding Materials that do not emit chemical pollution are also used for tapes and piping. By adopting such a configuration, it is possible to significantly reduce airborne chemical pollutants in newly constructed clean rooms compared to clean rooms made of materials that do not consider chemical pollutants.
このように、 本発明に係る第 2の実施形態としての半導体製造システム 2 0 0 によれば、 ケミカルフィルタ 2 2を通すなどして化学汚染物質を低減した空気を 送り込むペイ方式のクリーンルーム 2において、 半導体製造装置 2 0の構成材料 を化学汚染発散性の材料から化学汚染非発散性の材料に置き換えることで、 半導 体製造装置 2 0からメンテナンスエリア 2 3や作業通路 1 0 C等への化学汚染物 質の発散を無くすことができる。 従って、 メンテナンスエリア 2 3及び作業通路 1 0 Cを清浄純粋な雰囲気の状態に維持することができる。 化学汚染発散性の材 料を使用した半導体製造装置 2 0を使用して半導体装置を製造する場合に比べて、 化学汚染物質の汚染に起因する不良発生、 品質低下、 信頼性低下及び、 製造ライ ンの稼働率低下を少なくすることができる。  As described above, according to the semiconductor manufacturing system 200 as the second embodiment of the present invention, in the pay-type clean room 2 in which air with reduced chemical contaminants is sent through a chemical filter 22 or the like, By replacing the constituent materials of semiconductor manufacturing equipment 20 from materials that emit chemical pollution to materials that do not emit chemical pollution, chemicals from semiconductor manufacturing equipment 20 to maintenance area 23 and work passages 10 C etc. Emission of contaminants can be eliminated. Therefore, the maintenance area 23 and the work passage 10C can be maintained in a clean and pure atmosphere. Compared to manufacturing semiconductor devices using semiconductor manufacturing equipment 20 that uses materials that emit chemical pollution, the occurrence of defects due to contamination by chemical contaminants, lower quality, lower reliability, and lower manufacturing This can reduce the decrease in the operating rate of the application.
また、 新たにクリーンルーム 2を建築する場合、 ケミカルフィルタ 2 2などを 使用して空気を清浄ィ匕する空気清浄化機構にかかる初期投資を低減することがで き、 従来方式の空気清浄化機構のランニングコストに比べて、 第 2の実施形態で は、 半導体製造装置 2 0の構成部材の一部を変更する、 好ましくはクリーンルー ム 2の建築部材を変更する等のわずかな投資増加で済むようになる。 In addition, when a new clean room 2 is constructed, the initial investment for an air purifying mechanism for purifying air by using a chemical filter 22 or the like can be reduced, and the conventional air purifying mechanism can be reduced. Compared to running costs, in the second embodiment Thus, a small increase in investment such as changing a part of the constituent members of the semiconductor manufacturing apparatus 20, preferably changing the building members of the clean room 2, etc. can be achieved.
この実施形態では化学汚染非発散性の材料に関して、 ポリオレフイン系、 テフ ロン (商標) 系、 ポリエチレンテレフタレート系又は Z及ぴポリカーボネート系 の素材について説明したが、 これに限られることはなく、 化学汚染非発散性の材 料に関してはガスクロマトグラフなどの分析によつて見いだされた全ての新たな 材料を含む。  In this embodiment, a polyolefin-based material, a Teflon (trademark) -based material, a polyethylene terephthalate-based material, or a Z- and polycarbonate-based material has been described as a material that does not emit chemical contamination. However, the present invention is not limited thereto. For divergent materials, this includes all new materials found by analysis such as gas chromatography.
[第 1の実施例]  [First embodiment]
この実施例では上述したクリーンルーム 1やクリーンルーム 2等に設置される 半導体製造装置 2 0の一例となる S M I F ( S tandard Mechanical  In this embodiment, an S MIF (Standard Mechanical) which is an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 or clean room 2 or the like.
I nterface) 方式の半導体製造装置 2 0 1に化学汚染非発散性の材料を使用した ものである。  This is a semiconductor manufacturing device 201 of the (Interface) type, which uses a material that does not emit chemical pollution.
図 3に示す半導体製造装置 2 0 1は例えば、 化学気相成長装置を構成するもの であり、 装置本体となる所定形状の筐体 3 0 0を有している。 筐体 3 0 0の中央 部から右側にかけては加工エリア 3 3となっている。 加工エリア 3 3の下方には 装置部品を構成する制御ユニット 3 7 A, 3 7 Bが設けられている。 この制御ュ ニット 3 7 Aには被覆電線 3 8が接続されており、 制御ュニット 3 7 A及び 3 7 B間にも被覆電線 3 8が接続されており、 電源等を供給するようになされる。 被 覆電線 3 8にはポリオレフィン系又は/及ぴテフロン (商標) 系の材料で被覆し た電線が使用されている。 筐体 3 0 0の前面には透明樹脂製パネル 3 9が取り付 けられ、 内部の様子が観察できるようになされている。 透明樹脂製パネル 3 9に はポリエチレンテレフタレート ( P E T) 板あるいはポリカーボネート ( P C) 板が使用される。 その際の板材のシールにはシロキサンの揮散を低減した低シロ キサン揮散性のシール剤が使用される。  The semiconductor manufacturing apparatus 201 shown in FIG. 3 constitutes, for example, a chemical vapor deposition apparatus, and has a casing 300 having a predetermined shape serving as an apparatus main body. A processing area 33 extends from the center of the housing 300 to the right side. Below the machining area 33, control units 37A and 37B, which are equipment components, are provided. An insulated wire 38 is connected to the control unit 37A, and an insulated wire 38 is also connected between the control units 37A and 37B to supply power and the like. . For the covered electric wire 38, an electric wire coated with a polyolefin-based material and / or a Teflon (trademark) -based material is used. A transparent resin panel 39 is attached to the front surface of the housing 300 so that the inside can be observed. For the transparent resin panel 39, a polyethylene terephthalate (PET) plate or a polycarbonate (PC) plate is used. At this time, a low siloxane-evaporating sealant with reduced siloxane volatilization is used to seal the plate material.
筐体 3 0 0の左側には S M I F方式のインタフェース 3 0を備えられ、 ウェハ カセット 3 1を出し入れするようになされる。 ウェハカセット 3 1には複数の半 導体ウェハ 3 O Aがセットされる。 このインタフェース 3 0と加工エリア 3 3と の間はウェハ搬送路 3 0 1となっており、 ウェハカセット 3 1が搬送される。 例 えば、 装置内を矢印 3 2のように移動し、 加工エリア 3 3に導かれる。 ウェハ力 セット 3 1には化学汚染非発散性の材料が使用される。 The SMIF interface 30 is provided on the left side of the housing 300 so that the wafer cassette 31 can be inserted and removed. A plurality of semiconductor wafers 3OA are set in the wafer cassette 31. A wafer transfer path 301 is provided between the interface 30 and the processing area 33, and the wafer cassette 31 is transferred. An example For example, it moves in the apparatus as indicated by an arrow 32 and is guided to a processing area 33. The wafer force set 31 uses a material that does not emit chemical contamination.
この半導体ゥェハ密閉容器は装置間の移動中およぴ保管中には一定の気密を保 てるものであり、 半導体製造装置側にある専用の取り付け口を介して、 S M I F においてはカセット、 半導体ウェハ密閉容器 ( F O U P ; Front Opening Unified Pod) においては半導体ウェハ 3 0 Aのみが取り込まれる。 半導体ゥェ ハ 3 O Aを加工エリア 3 3に送り込む、 あるいは、 半導体製造装置 2 0 1から取 り出す場合には、 半導体密閉容器と専用の取り付け口とは一定の気密を保つよう になされる。  This semiconductor wafer sealed container maintains a certain degree of airtightness during transportation between devices and during storage. Through SMIF's dedicated mounting port, cassettes and semiconductor wafers are sealed in the SMIF. In the container (FOUP; Front Opening Unified Pod), only the semiconductor wafer 30A is taken in. When the semiconductor wafer 3OA is fed into the processing area 33 or taken out from the semiconductor manufacturing apparatus 201, the semiconductor hermetic container and the dedicated mounting port are made to maintain a certain airtightness.
このウェハ搬送路 3 0 1の天井部にはケミカルフィルタ 3 5及びファン 3 4力 S 取り付けられ、 ウェハカセット 3 1又はこのウェハカセット 3 1から取り出され た半導体ウェハ 3 O Aが搬送される過程で、 半導体ウェハ 3 O Aが露出する部分 に、 このファン 3 4から送られた空気をケミカルフィルタ 3 5を通して供給する ようになされる。 これは露出した半導体ウェハ 3 O Aが化学汚染物質の汚染を受 けないよう配慮したためである。 このケミカルフィルタ 3 5には低ホウ素使用量 の濾材及び濾材をシールするために低有機物発散性のシ一/レ材が使用される。 このように、 本発明に係る第 1の実施例としての半導体製造装置 2 0 1によれ ば、 化学汚染非発散性の材料を使用した化学気相成長装置等が配置されるので、 筐体 3 0 0内での化学汚染物質の発散を無くすことができる。 従って、 クリーン ルーム 1ゃクリーンルーム 2等内を清浄純粋な雰囲気の状態に維持することがで き、 化学汚染発散性の材料を使用した化学気相成長装置等により半導体装置を製 造する場合に比べて、 化学汚染物質の汚染に起因する不良発生、 品質低下、 信頼 性低下及び、 製造ラインの稼働率低下を少なくすることができる。  A chemical filter 35 and a fan 34 are attached to the ceiling of the wafer transfer path 301, and in the process of transferring the wafer cassette 31 or the semiconductor wafer 3OA taken out of the wafer cassette 31, The air sent from the fan 34 is supplied to the exposed portion of the semiconductor wafer 3OA through the chemical filter 35. This is because the exposed semiconductor wafer 3OA was not affected by chemical contaminants. For the chemical filter 35, a filter material with a low amount of boron used and a low-organic material-dispersing screen material are used to seal the filter material. As described above, according to the semiconductor manufacturing apparatus 201 as the first embodiment of the present invention, a chemical vapor deposition apparatus or the like using a material that does not emit chemical contamination is disposed. Emission of chemical contaminants within the temperature range can be eliminated. Therefore, it is possible to maintain a clean and pure atmosphere in the clean room 1 純 粋 clean room 2 etc., compared to the case where semiconductor devices are manufactured using a chemical vapor deposition apparatus using materials that emit chemical pollution. As a result, it is possible to reduce the occurrence of defects, quality deterioration, reliability deterioration, and reduction in the operation rate of the production line due to the contamination of the chemical contaminants.
[第 2の実施例]  [Second embodiment]
この実施例では上述したクリーンルーム 1ゃクリーンルーム 2等に設置される 半導体製造装置 2 0の一例となる露光装置 2 0 2に化学汚染非発散性の材料を使 用したものである。  In this embodiment, an exposure apparatus 202 as an example of the semiconductor manufacturing apparatus 20 installed in the above-described clean room 1 ゃ clean room 2 uses a material that does not emit chemical contamination.
図 4に示す露光装置 2 0 2は所定形状の筐体 6 0を有している。 筐体 6 0の中 央部は露光エリア 4 0であり、 この露光エリア 4 0には光学ュニット 4 5が設け られ、 半導体ウェハ 3 O Aにトランジスタ回路や配線パターン等を露光するよう になされる。 光学ュニット 4 5の下方にはウェハ載置台 5 3が設けられている。 この筐体 6 0の右側には空調機 4 8が設けられ、 その内部にはファン 4 1が取り 付けられている。 The exposure apparatus 202 shown in FIG. 4 has a casing 60 having a predetermined shape. Inside housing 60 The central area is an exposure area 40, and an optical unit 45 is provided in the exposure area 40 so as to expose a semiconductor wafer 3OA with a transistor circuit, a wiring pattern, and the like. Below the optical unit 45, a wafer mounting table 53 is provided. An air conditioner 48 is provided on the right side of the housing 60, and a fan 41 is mounted inside the air conditioner 48.
露光エリア 4 0の天井部には露光域天井チャンバ 4 9が設けられており、 露光 域天井チャンバ 4 9には U L P Aフィルタ 4 3が取り付けられている。 空調機 4 8の上部と露光域天井チャンバ 4 9との間にはケミカルフィルタ 4 2が取り付け られ、 循環空気を清浄化するようになされる。 このケミカルフィルタ 4 2及び U L P Aフィルタ 4 3には低ホウ素使用量の濾材及ぴ濾材をシールするために低有 機物発散性のシール材が使用される。 化学汚染非発散性の材料を使用した。 空調機 4 8の下部にはガラリ 5 4が設けられ、 露光エリア 4 0から空調機 4 8 内へ空気を取り込むようになされる。 ガラリ 5 4には化学汚染非発散性の材料を ルーバー状に加工したものが使用される。 上述の空調機 4 8の背面には制御ュニ ット 4 6が設けられている。 この制御ュニット 4 6には被覆電線 4 7が接続され ており、 電源等を供給するようになされる。 被覆電線 4 7にはポリォレフィン系 又は Z及ぴテフロン (商標) 系の材料で被覆した電線が使用されている。  An exposure area ceiling chamber 49 is provided at the ceiling of the exposure area 40, and a ULPA filter 43 is attached to the exposure area ceiling chamber 49. A chemical filter 42 is provided between the upper part of the air conditioner 48 and the exposure area ceiling chamber 49 to clean the circulating air. For the chemical filter 42 and the ULPA filter 43, a filter material having a low boron content and a low-organic-emission sealing material are used to seal the filter material. Materials that do not emit chemical contamination are used. A gallery 54 is provided below the air conditioner 48 so that air is taken in from the exposure area 40 into the air conditioner 48. The gallery 54 is made of louver-shaped material that does not emit chemical pollution. A control unit 46 is provided on the back of the air conditioner 48 described above. The control unit 46 is connected to a covered electric wire 47 to supply power and the like. As the coated electric wire 47, an electric wire coated with a polyolefin or Z and Teflon (trademark) material is used.
この露光装置 2 0 2では光学ュニット 4 5によって半導体ウェハ 3 O Aを露光 する過程で、 空調機 4 8のファン 4 1から送られてくる空気をケミカルフィルタ 4 2及び U L P Aフィルタ 4 3を通して露光エリア 4 0に送り循環させている。 これは光学ユニット 4 5への化学汚染物質の汚染を防ぐためである。  In this exposure apparatus 202, in the process of exposing the semiconductor wafer 3 OA by the optical unit 45, air sent from the fan 41 of the air conditioner 48 is passed through the chemical filter 42 and the ULPA filter 43 to expose the exposure area 4. Feed to 0 and circulate. This is to prevent contamination of the optical unit 45 with chemical contaminants.
このように、 本発明に係る第 2の実施例としての露光装置 2 0 2によれば、 筐 体 6 0やガラリ 5 4等を化学汚染非発散性の材料を使用して構成されるので、 空 調機 4 8で空気を循環させる場合に、 筐体 6 0内での化学汚染物質の発散を無く すことができる。 従って、 クリーンルーム 1やクリーンルーム 2等内を清浄純粋 な雰囲気の状態に維持することができ、 化学汚染発散性の材料を使用した露光装 置により半導体ウェハ 3 O Aを露光する場合に比べて、 化学汚染物質の汚染に起 因する不良発生、 品質低下、 信頼性低下及ぴ、 製造ラインの稼働率低下を少なく することができる。 As described above, according to the exposure apparatus 202 as the second embodiment of the present invention, the housing 60, the gallery 54, and the like are configured by using a material that does not emit chemical contamination. When air is circulated by the air conditioner 48, emission of chemical contaminants in the housing 60 can be eliminated. Therefore, the interior of the clean room 1 or the clean room 2 can be maintained in a clean and pure atmosphere, and the chemical contamination can be reduced as compared with the case where the semiconductor wafer 3 OA is exposed by an exposure apparatus using a material which emits chemical contamination. Less occurrence of defects due to material contamination, lower quality, lower reliability, and less reduction in production line availability can do.
[第 3の実施例]  [Third embodiment]
この実施例では第 3の半導体製造システムを構成するに当たり、 化学汚染物質 を発散する恐れのある構成部材を包囲体により囲み、 この包囲体に排気口を備え、 この排気口に適当な排気手段を接続してその囲い内部の空気を当該製造装置外に 排出できるようにしたものである。 つまり、 この第 3の半導体製造システムでは クリーンルーム 1やタリーンルーム 2等内で半導体製造装置 2 0 3を使用して半 導体装置を製造する方法であって、 半導体製造装置 2 0 3の一部あるいは全部を 包囲体で覆う工程と、 この包囲体内の化学汚染物質をクリーンルーム 1やタリー ンルーム 2等の外へ排気する工程とを有する (第 2の半導体製造方法) 。  In this embodiment, when configuring the third semiconductor manufacturing system, components that may emit chemical contaminants are surrounded by an enclosure, the enclosure is provided with an exhaust port, and an appropriate exhaust means is provided in the exhaust port. It is connected so that the air inside the enclosure can be discharged out of the manufacturing equipment. In other words, in the third semiconductor manufacturing system, a semiconductor device is manufactured using the semiconductor manufacturing device 203 in the clean room 1 or the tallen room 2 or the like, and a part of the semiconductor manufacturing device 203 is used. Alternatively, the method includes a step of covering the entire structure with an enclosure, and a step of exhausting chemical contaminants in the enclosure to the outside of the clean room 1 or the tallinn room 2 (second semiconductor manufacturing method).
図 5に示す半導体製造装置 2 0 3は第 1の実施例で説明したような化学気相成 長装置であり、 この装置本体には制御ュニット 3 7 A, 3 7 Bが取り付けられる。 この制御ュニット 3 7 A, 3 7 Bには、 包囲体の一例となる密閉パネルケース 5 0でその全部を覆うように設けられ、 この密閉パネルケース 5 0にはダクト 5 1 やそのダクト 5 1の先には排気手段 5 2が取り付けられる。 この密閉パネルケ一 ス 5 0には例えばクリーンルーム 1ゃクリーンルーム 2等の外に至るダクト 5 1 が接続され、 このダクト 5 1の途中又は終端にファン等の排気手段 5 2が取り付 けられ、 制御ュニット 3 7 A及ぴ 3 7 B内の化学汚染物質をクリーンルーム 1や クリーンノレーム 2等の外にお気するようになされる。  The semiconductor manufacturing apparatus 203 shown in FIG. 5 is a chemical vapor growth apparatus as described in the first embodiment, and control units 37A and 37B are attached to the main body of the apparatus. The control units 37A and 37B are provided so as to cover the whole with a sealed panel case 50 as an example of an enclosure. The sealed panel case 50 has a duct 51 and its duct 51 The exhaust means 52 is attached at the end of. A duct 51 leading to the outside of the clean room 1 例 え ば clean room 2, for example, is connected to the sealed panel case 50, and an exhaust means 52 such as a fan is attached to the middle or end of the duct 51 for control. Units 37 A and 37 B are exposed to chemical contaminants outside Clean Room 1 and Clean Nome 2.
この例で化学汚染物質はイオン成分、 有機物及び無機物のうち少なくと 一つ を含むものである。 このイオン成分は F—基、 C 基、 N 03—基、 S O -基、 P 04 3—基、 NH4+基のうち少なくとも一つを含み、 有機物はフタル酸ジプチル (D B P ) 、 フタル酸ジォクチル (D O P ) 、 フタル酸ジェチル (D E P ) 、 シロキ サン、 ジブチルヒドロキシトルエン (B HT) 、 アジピン酸エステル、 リン酸ェ ステル、 有機ァミンのうち少なくとも一つを含み、 無機物はリン (P ) 、 ホウ素 (B ) のうち少なくとも一つを含むものである。 In this example, the chemical contaminants include at least one of the ionic component, organic matter, and inorganic matter. The ion component F- groups, C group, N 0 3 - group, SO - group, P 0 4 3 - group, wherein at least one of NH 4 + group, organic matter Jipuchiru phthalate (DBP), phthalate It contains at least one of dioctyl acid (DOP), getyl phthalate (DEP), siloxane, dibutylhydroxytoluene (BHT), adipic acid ester, ester phosphate, and organic amine, and inorganic substances are phosphorus (P), It contains at least one of boron (B).
この密閉パネルケース (お気を引く箇所) 5 0は制御ュ-ット 3 7 A, 3 7 B のように半導体製造装置 2 0 3の一部分である必要はなく、 半導体製造装置全体 を囲って内部全体を排気することでも良い。 また、 排気は装置構成部材から発散 する化学汚染物質をクリーンルーム気中に出さないことを目的としたものである。 このことで排気先は必ずしもクリーンルーム 1やクリーンルーム 2等の外である 必要はなく、 その排気を適当なケミカルフィルタに通すなどして、 化学汚染物質 を除去する処理を施してクリーンルーム気中に戻すようにしても構わない。 The sealed panel case (a point of interest) 50 does not need to be a part of the semiconductor manufacturing apparatus 203 as in the control units 37 A and 37 B, but the entire semiconductor manufacturing apparatus. Alternatively, the entire interior may be exhausted by surrounding the space. Exhaust is intended to prevent chemical pollutants emitted from the equipment components from being emitted into the clean room air. As a result, the exhaust destination does not necessarily need to be outside the clean room 1 or clean room 2, etc., so that the exhaust gas is passed through a suitable chemical filter to remove chemical pollutants and returned to the clean room. It does not matter.
このように、 本発明に係る第 3の実施例としての半導体製造装置 2 0 3によれ ば、 本体装置の一部あるいは制御ュニット 3 7 A, 3 7 Bの全部に化学汚染発散 性の材料をやむを得ず使用した場合でも、 本体装置の一部あるレヽは制御ュニット 3 7 A, 3 7 Bの全部を覆うように密閉パネルケース 5 0が取り付けられるので、 密閉パネルケース 5 0内の化学汚染物質を排気手段 5 2によってクリーンルーム 外又はタリーンルーム内のフィルタ設置個所へ排気することができる。  As described above, according to the semiconductor manufacturing apparatus 203 as the third embodiment of the present invention, a material capable of emitting chemical contamination is used for a part of the main unit or the entire control units 37A and 37B. Even if it is unavoidable to use, the closed panel case 50 is attached to the part of the main unit to cover the entire control units 37A and 37B, so that the chemical contaminants in the closed panel case 50 can be removed. By means of the exhaust means 52, the air can be exhausted to the place where the filter is installed outside the clean room or in the tallen room.
従って、 タリーンルーム 1やタリーンルーム 2等内を清浄純粋な雰囲気の状態 に維持することができる。 これにより、 当該半導体製造装置 2 0 3からクリーン ルーム気中に発散する化学汚染物質を低減し、 化学汚染物質に起因する不良発生、 品質低下、 信頼性低下、 製造ラインの稼働率低下を少なくすることができる。 し かも、 半導体装置の製造コストを低減できる。 産業上の利用可能性  Therefore, the interior of the tallen room 1 and the tallen room 2 can be maintained in a pure and pure atmosphere. As a result, chemical contaminants that emanate from the semiconductor manufacturing equipment 203 into the clean room air are reduced, and the occurrence of defects due to chemical contaminants, lower quality, lower reliability, and lower production line operation rates are reduced. be able to. Moreover, the manufacturing cost of the semiconductor device can be reduced. Industrial applicability
この発明はクリーンルーム内での液晶表示装置や、 半導体集積回路装置等の製 造に適用して極めて好適である。  INDUSTRIAL APPLICABILITY The present invention is very suitable when applied to the manufacture of a liquid crystal display device in a clean room, a semiconductor integrated circuit device, and the like.

Claims

請 求 の 範 囲 The scope of the claims
1 . 半導体装置を製造するためのクリーンルームと、 1. A clean room for manufacturing semiconductor devices;
化学汚染非発散性の材料を使用した半導体製造装置とを備え、  A semiconductor manufacturing apparatus using a material that does not emit chemical contamination,
前記半導体製造装置は当該クリーンルーム内に設置されることを特徴とする半 導体製造システム。  A semiconductor manufacturing system, wherein the semiconductor manufacturing apparatus is installed in the clean room.
2 . 前記タリーンルームは化学汚染非発散性の材料を使用して建築されて成るこ とを特徴する請求項 1に記載の半導体製造システム。 2. The semiconductor manufacturing system according to claim 1, wherein the tallen room is constructed using a material that does not emit chemical pollution.
3 . 前記半導体製造装置は筐体、 被覆電線、 シール材、 樹脂製パネル、 樹脂製シ ート、 バンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管のうち少なくとも一つ又はこれらを 組み合わせた本体装置又は Z及ぴ装置部品を有していることを特徴する請求項 1 に記載の半導体製造システム。 3. The semiconductor manufacturing equipment consists of housing, covered electric wire, sealing material, resin panel, resin sheet, band heater, paint, air conditioning filter, heat insulating material, adhesive, printed circuit board, printed circuit board resist, adhesive 2. The semiconductor manufacturing system according to claim 1, wherein the semiconductor manufacturing system has at least one of a tape and a pipe, or a main unit or a combination of a Z and a device, in which these are combined.
4 . 前記半導体製造装置の一部あるいは全部を覆う包囲体と、 4. an enclosure covering a part or all of the semiconductor manufacturing apparatus;
前記包囲体内を排気する排気手段とを備えることを特徴とする請求項 1に記載 の半導体製造システム。  The semiconductor manufacturing system according to claim 1, further comprising: an exhaust unit configured to exhaust the inside of the enclosure.
5 . 前記半導体製造装置は、 5. The semiconductor manufacturing apparatus includes:
露光装置、 塗布装置、 現像装置、 洗浄装置、 測定装置、 化学気相成長装置、 プ ラズマ製膜装置、 拡散垆装置、 エッチング装置、 メツキ装置、 ラッピング装置、 アツシング装置、 イオン注入装置、 CMP装置、 搬送装置、 保管装置のうち少な くとも一つを構成することを特徴とする請求項 1に記載の半導体製造システム。  Exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, plasma film forming equipment, diffusion equipment, etching equipment, plating equipment, wrapping equipment, assing equipment, ion implantation equipment, CMP equipment, 2. The semiconductor manufacturing system according to claim 1, wherein at least one of the transfer device and the storage device is configured.
6 . 半導体装置を製造する装置であって、 6. An apparatus for manufacturing a semiconductor device,
装置本体と、 前記装置本体に取り付けられ又は Z及び当該装置本体に接続された装置部品と を備え、 The device body, And Z and an apparatus component connected to the apparatus main body.
前記装置本体又は Z及び装置部品には化学汚染非発散性の材料を使用すること を特徴とする半導体製造装置。  A semiconductor manufacturing apparatus, wherein a material that does not emit chemical contamination is used for the apparatus main body or Z and the equipment parts.
7 . 前記装置本体又は/及び装置部品は、 7. The device body or / and device parts are
前記化学汚染非発散性の材料を使用した、 筐体、 被覆電線、 シール材、 樹脂製 パネル、 樹脂製シート、 パンドヒータ、 塗料、 空調用フィルタ、 断熱材、 接着剤、 プリント基板、 プリント基板用レジスト、 接着テープ、 配管のうち少なくとも一 つ又はこれらを有していることを特徴する請求項 6に記載の半導体製造装置。  Cases, covered electric wires, sealing materials, resin panels, resin sheets, band heaters, paints, air-conditioning filters, heat insulating materials, adhesives, printed circuit boards, resists for printed circuit boards using the above-mentioned materials that do not emit chemical contamination 7. The semiconductor manufacturing apparatus according to claim 6, wherein the apparatus includes at least one of: an adhesive tape; and a pipe.
8 . 前記化学汚染非発散性の材料には、 ポリオレフイン系、 テフロン (商標) 系、 ポリエチレンテレフタレート系又は z及ぴポリカーボネート系の素材を使用する ことを特徴とする請求項 6に記載の半導体製造装置。 8. The semiconductor manufacturing apparatus according to claim 6, wherein a material such as polyolefin, Teflon (trademark), polyethylene terephthalate, or z and polycarbonate is used as the material that does not emit chemical contamination. .
9 . 前記本体装置又は/及び装置部品に被覆電線が使用され、 9. A covered electric wire is used for the main unit and / or device parts,
前記被覆電線にはポリオレフィン系又は Z及びテフ口ン (商標) 系の材料で被 覆した電線を使用することを特徴とする請求項 6に記載の半導体製造装置。  7. The semiconductor manufacturing apparatus according to claim 6, wherein the covered electric wire is an electric wire covered with a polyolefin-based material or a material based on Z and Teflon (trademark).
1 0 . 前記本体装置又は/及ぴ装置部品にフィルタが使用され、 10. A filter is used for the main unit or / and the parts of the main unit,
前記フィルタには低ホゥ素使用量の濾材及ぴ前記濾材をシールするために低有 機物発散性のシール材が使用されることを特徴とする請求項 6に記載の半導体製  7. The semiconductor device according to claim 6, wherein a low-boron filter material and a low-organic-emission sealing material for sealing the filter material are used for the filter.
1 1 . 前記本体装置又は/及び装置部品に透明樹脂製パネルが使用され、 1 1. A transparent resin panel is used for the main unit and / or device parts,
前記透明榭脂製パネルには、 ポリエチレンテレフタレート系あるいはポリカー ボネート系の板材が使用されることを特徴とする請求項 6に記載の半導体製造装 7. The semiconductor manufacturing apparatus according to claim 6, wherein a plate material of polyethylene terephthalate or polycarbonate is used for the transparent resin panel.
1 2 . 前記板材のシールには低シロキサン揮散性のシール剤を使用することを特 徴とする請求項 1 1に記載の半導体製造装置。 12. The semiconductor manufacturing apparatus according to claim 11, wherein a sealant having low siloxane volatility is used for sealing the plate material.
1 3 . 前記本体装置又は/及び装置部品に駆動部が使用され、 1 3. A drive unit is used for the main unit and / or device parts,
前記駆動部には密閉型のモータが使用され、 該モータは充分にエージングした 後に使用されることを特徴とする請求項 6に記載の半導体製造装置。  7. The semiconductor manufacturing apparatus according to claim 6, wherein a hermetic motor is used for the driving section, and the motor is used after being sufficiently aged.
1 4 . 前記本体装置又は/及び装置部品の一部あるいは全部を覆う包囲体と、 前記包囲体内を排気する排気手段とを備えることを特徴とする請求項 6に記載 の半導体製造装置。 14. The semiconductor manufacturing apparatus according to claim 6, further comprising: an enclosure covering part or all of the main body device and / or the device components; and an exhaust unit configured to exhaust the enclosure.
1 5 . 半導体装置を製造する装置であって、 1 5. An apparatus for manufacturing a semiconductor device,
装置本体と、  The device body,
前記装置本体に取り付けられ又は Z及び当該装置本体に接続された装置部品と、 前記本体装置又は Z及び装置部品の一部あるいは全部を覆う包囲体と、 前記包囲体内を排気する排気手段とを備えることを特徴とする半導体製造装置。  The apparatus includes: Z attached to the apparatus main body or an apparatus component connected to the apparatus main body; an enclosure covering part or all of the main apparatus, the Z, and the apparatus component; and an exhaust unit that exhausts the enclosure. A semiconductor manufacturing apparatus characterized by the above-mentioned.
1 6 . 前記本体装置又は/及び装置部品は、 16. The main unit and / or device parts are:
露光装置、 塗布装置、 現像装置、 洗浄装置、 測定装置、 化学気相成長装置、 物 理気相成長装置、 拡散炉装置、 エッチング装置、 メツキ装置、 ラッピング装置、 アツシング装置、 イオン注入装置、 化学機械的研磨装置、 搬送装置、 保管装置の うち少なくとも一つを構成することを特徴とする請求項 1 5に記載の半導体製造  Exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, physical vapor deposition equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, ion implantation equipment, chemical machinery 16. The semiconductor manufacturing device according to claim 15, wherein at least one of a mechanical polishing device, a transport device, and a storage device is configured.
7 . 予めィ匕学汚染非発散性の材料を使用した半導体製造装置を製造する工程と. 前記半導体製造装置をクリーンルーム内に設置する工程と、 7. A step of manufacturing a semiconductor manufacturing apparatus using a material that does not emit contamination in advance, and a step of installing the semiconductor manufacturing apparatus in a clean room.
前記クリーンルーム内で前記半導体製造装置を使用して半導体装置を製造する ことを特徴とする半導体製造方法。 Manufacturing a semiconductor device using the semiconductor manufacturing apparatus in the clean room A semiconductor manufacturing method characterized by the above-mentioned.
1 8 . 前記クリーンルームを化学汚染非発散性の材料を使用して建築することを 特徴する請求項 1 7に記載の半導体製造方法。 18. The semiconductor manufacturing method according to claim 17, wherein the clean room is constructed using a material that does not emit chemical pollution.
1 9 . 前記化学汚染非発散性の材料には、 ポリオレフイン系、 テフロン (商標) 系、 ポリエチレンテレフタレート系又はノ及ぴポリカーボネート系の素材を使用 することを特徴とする請求項 1 7に記載の半導体製造方法。 19. The semiconductor according to claim 17, wherein the material that does not emit chemical contamination is a polyolefin-based, Teflon (trademark) -based, polyethylene terephthalate-based or polycarbonate-based material. Production method.
2 0 . 前記半導体製造装置の一部あるいは全部を包囲体で覆う工程と、 20. a step of covering part or all of the semiconductor manufacturing apparatus with an enclosure;
前記包囲体内を排気する工程とを含むことを特徴とする請求項 1 7に記載の半 導体製造方法。  18. The method according to claim 17, further comprising the step of exhausting the inside of the enclosure.
2 1 . 前記半導体製造装置は、 2 1. The semiconductor manufacturing equipment
露光装置、 塗布装置、 現像装置、 洗浄装置、 測定装置、 化学気相成長装置、 物 理気相成長装置、 拡散炉装置、 エッチング装置、 メツキ装置、 ラッピング装置、 アツシング装置、 イオン注入装置、 化学機械的研磨装置、 搬送装置、 保管装置の うち少なくとも一つを構成することを特徴とする請求項 1 7に記載の半導体製造 方法。  Exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, physical vapor deposition equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, ion implantation equipment, chemical machinery 18. The semiconductor manufacturing method according to claim 17, wherein at least one of a mechanical polishing device, a transport device, and a storage device is configured.
2 2. タリーンルーム内で半導体製造装置を使用して半導体装置を製造する方法 であって、 2 2. A method of manufacturing a semiconductor device using a semiconductor manufacturing device in a taleen room,
前記半導体製造装置の一部あるいは全部を包囲体で覆う工程と、  A step of covering a part or all of the semiconductor manufacturing apparatus with an enclosure;
前記包囲体内の化学汚染物質をクリーンルーム外へ排気する工程とを有するこ とを特徴とする半導体製造方法。 ,  Exhausting the chemical contaminants in the enclosure out of the clean room. ,
2 3 . 前記化学汚染物質は、 2 3. The chemical contaminants are:
イオン成分、 有機物及び無機物のうち少なくとも一つを含むことを特徴とする 請求項 2 2に記載の半導体製造方法。 Characterized by containing at least one of ionic components, organic substances and inorganic substances The method for manufacturing a semiconductor according to claim 22.
2 4 . 前記イオン成分は、 24. The ionic component is
F一基、 C 1—基、 N O 基、 S O -基、 P O 基、 NH 基のうち少なくと も一つを含み、  Including at least one of F, C 1—, N O, S O—, P O, and NH;
前記有機物は、  The organic matter is
フタル酸ジプチル、 フタル酸ジォクチル、 フタル酸ジェチル、 シロキサン、 ジ ブチルヒ ドロキシトルエン、 アジピン酸エステル、 リン酸エステル、 有機アミン のうち少なくとも一つを含み、  Containing at least one of dibutyl phthalate, dioctyl phthalate, getyl phthalate, siloxane, dibutylhydroxytoluene, adipic acid ester, phosphate ester, and organic amine;
前記無機物は、  The inorganic substance is
リン、 ホウ素のうち少なくとも一つを含むことを特徴とする請求項 2 3に記載 の半導体製造方法。  23. The semiconductor manufacturing method according to claim 23, comprising at least one of phosphorus and boron.
2 5 . 前記半導体製造装置は、 25. The semiconductor manufacturing equipment
露光装置、 塗布装置、 現像装置、 洗浄装置、 測定装置、 化学気相成長装置、 物 理気相成長装置、 拡散炉装置、 エッチング装置、 メツキ装置、 ラッピング装置、 アツシング装置、 イオン注入装置、 化学機械的研磨装置、 搬送装置、 保管装置の うち少なくとも一つを構成することを特徴とする請求項 2 2に記載の半導体製造 方法。  Exposure equipment, coating equipment, developing equipment, cleaning equipment, measuring equipment, chemical vapor deposition equipment, physical vapor deposition equipment, diffusion furnace equipment, etching equipment, plating equipment, wrapping equipment, asshing equipment, ion implantation equipment, chemical machinery 23. The semiconductor manufacturing method according to claim 22, wherein at least one of a mechanical polishing device, a transport device, and a storage device is configured.
2 6 . 半導体基板と、 2 6. The semiconductor substrate,
前記半導体基板上に形成された電子回路素子とを備え、  Comprising an electronic circuit element formed on the semiconductor substrate,
化学汚染非発散性の材料を使用して製造された半導体製造装置により前記半導 体基板及ぴ Z又は電子回路素子が製造されて成ることを特徴とする半導体装置。  A semiconductor device, wherein the semiconductor substrate and the Z or electronic circuit element are manufactured by a semiconductor manufacturing apparatus manufactured using a material that does not emit chemical contamination.
2 7 . 前記半導体製造装置がクリーンルーム内に設置され、 27. The semiconductor manufacturing equipment is installed in a clean room,
前記クリーンルーム内で前記半導体製造装置を使用して前記半導体基板及び Z 又は電子回路素子が製造されて成ることを特徴とする請求項 2 6に記載の半導体 27. The semiconductor according to claim 26, wherein the semiconductor substrate and Z or an electronic circuit element are manufactured using the semiconductor manufacturing apparatus in the clean room.
2 8 . 前記半導体製造装置が液晶表示装置を製造する装置であって、 2 8. The semiconductor manufacturing apparatus is an apparatus for manufacturing a liquid crystal display device,
前記電子回路素子は液晶表示素子であることを特徴とする請求項 2 6に記載の 半導体装置。  27. The semiconductor device according to claim 26, wherein said electronic circuit element is a liquid crystal display element.
PCT/JP2002/007761 2001-07-31 2002-07-30 Semiconductor manufacturing system, semiconductor manufacturing apparatus, semiconductor manufacturing method, and semiconductor device WO2003012836A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2527755A3 (en) * 2011-05-25 2014-05-07 Omron Corporation Method for controlling air quality adjustment, method for controlling ventilation air flow and ventilation air flow controlling system
CN109790064A (en) * 2016-11-16 2019-05-21 日本电气硝子株式会社 The manufacturing method of glass substrate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599435B1 (en) * 2004-05-17 2006-07-14 주식회사 하이닉스반도체 Device for Cleaning Substrate
JP4525789B2 (en) * 2008-04-17 2010-08-18 株式会社デンソー Work equipment and local clean room in work equipment
JP6453284B2 (en) * 2016-09-02 2019-01-16 伸和コントロールズ株式会社 Air conditioning system

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06166563A (en) * 1992-11-26 1994-06-14 Toshiba Ceramics Co Ltd Ceramic having high surface purity and its production
JPH10300145A (en) * 1997-04-28 1998-11-13 Taisei Corp Gas introduction equipment for clean equipment
JPH10324884A (en) * 1997-03-26 1998-12-08 Ntn Corp Solid lubricant and sealing member for ball screw
JPH1144443A (en) * 1997-07-24 1999-02-16 Oki Electric Ind Co Ltd Clean room, manufacture of semiconductor element, treating chamber for manufacturing semiconductor element, manufacturing device for semiconductor element and cleaning method of member for semiconductor element
JPH11217930A (en) * 1998-02-03 1999-08-10 Shimizu Corp Construction method of low outgas screen room and low outgas screen room
JP2000006335A (en) * 1998-06-23 2000-01-11 Takiron Co Ltd Fire-retardant polyolefin molded article
JP2000127288A (en) * 1998-07-16 2000-05-09 Mitsubishi Gas Chem Co Inc Transparent antistatic resin laminate and optical matter
WO2000037160A1 (en) * 1998-12-22 2000-06-29 Taisei Corporation Filter medium for air filter and process for producing the same
JP2001044699A (en) * 1999-08-04 2001-02-16 Matsushita Electric Ind Co Ltd Electronic parts-mounting machine and method
JP2001052533A (en) * 1999-08-04 2001-02-23 Shimizu Corp Wiring method and wiring cable for clean room

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03217467A (en) * 1990-01-24 1991-09-25 Fujitsu Ltd Sealing material for clean room
JP3427921B2 (en) * 1997-03-19 2003-07-22 宮崎沖電気株式会社 Semiconductor device production clean room and semiconductor device production method
JP2000146240A (en) * 1998-10-31 2000-05-26 Tokyo Electron Ltd Clean room air supply and exhaust system
JP2000302898A (en) * 1999-04-19 2000-10-31 Toray Ind Inc Method for purifying ion exchange fiber, and ion exchange paper containing ion exchange fiber
JP2001037191A (en) * 1999-07-16 2001-02-09 Ebara Corp Brushless fan motor
JP2001164737A (en) * 1999-08-11 2001-06-19 Shimizu Corp Construction method of floor material and adhesive used for it
JP2001151968A (en) * 1999-11-30 2001-06-05 Lonseal Corp Polyvinyl chloride resin composition

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06166563A (en) * 1992-11-26 1994-06-14 Toshiba Ceramics Co Ltd Ceramic having high surface purity and its production
JPH10324884A (en) * 1997-03-26 1998-12-08 Ntn Corp Solid lubricant and sealing member for ball screw
JPH10300145A (en) * 1997-04-28 1998-11-13 Taisei Corp Gas introduction equipment for clean equipment
JPH1144443A (en) * 1997-07-24 1999-02-16 Oki Electric Ind Co Ltd Clean room, manufacture of semiconductor element, treating chamber for manufacturing semiconductor element, manufacturing device for semiconductor element and cleaning method of member for semiconductor element
JPH11217930A (en) * 1998-02-03 1999-08-10 Shimizu Corp Construction method of low outgas screen room and low outgas screen room
JP2000006335A (en) * 1998-06-23 2000-01-11 Takiron Co Ltd Fire-retardant polyolefin molded article
JP2000127288A (en) * 1998-07-16 2000-05-09 Mitsubishi Gas Chem Co Inc Transparent antistatic resin laminate and optical matter
WO2000037160A1 (en) * 1998-12-22 2000-06-29 Taisei Corporation Filter medium for air filter and process for producing the same
JP2001044699A (en) * 1999-08-04 2001-02-16 Matsushita Electric Ind Co Ltd Electronic parts-mounting machine and method
JP2001052533A (en) * 1999-08-04 2001-02-23 Shimizu Corp Wiring method and wiring cable for clean room

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2527755A3 (en) * 2011-05-25 2014-05-07 Omron Corporation Method for controlling air quality adjustment, method for controlling ventilation air flow and ventilation air flow controlling system
CN109790064A (en) * 2016-11-16 2019-05-21 日本电气硝子株式会社 The manufacturing method of glass substrate

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