+

WO2003077284A3 - Heterojunction bipolar transistor having thinned base-collector depletion region - Google Patents

Heterojunction bipolar transistor having thinned base-collector depletion region Download PDF

Info

Publication number
WO2003077284A3
WO2003077284A3 PCT/US2003/006660 US0306660W WO03077284A3 WO 2003077284 A3 WO2003077284 A3 WO 2003077284A3 US 0306660 W US0306660 W US 0306660W WO 03077284 A3 WO03077284 A3 WO 03077284A3
Authority
WO
WIPO (PCT)
Prior art keywords
collector
base
layer
bipolar transistor
depletion region
Prior art date
Application number
PCT/US2003/006660
Other languages
French (fr)
Other versions
WO2003077284A2 (en
Inventor
Eric S Harmon
David B Salzman
Jerry M Woodall
Original Assignee
Univ Yale
Eric S Harmon
David B Salzman
Jerry M Woodall
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yale, Eric S Harmon, David B Salzman, Jerry M Woodall filed Critical Univ Yale
Priority to AU2003230597A priority Critical patent/AU2003230597A1/en
Publication of WO2003077284A2 publication Critical patent/WO2003077284A2/en
Publication of WO2003077284A3 publication Critical patent/WO2003077284A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

A heterojunction bipolar transistor includes a substrate (101) that supports an emitter layer (103), a base layer (105) and a collector layer (104). The collector layer is made thin, in combination with a reduction in a base-collector area in order to reduce capacitance, and is made from a wide band gap material that exhibits a high breakdown voltage. Preferably the collector layer is an intrinsic semiconductor material, such as intrinsic InGaP having a thickness of about 90 nm. The collector is thinned to reduce the probability of scattering, enabling electrons to be accelerated to higher kinetic energies due to an electrical field applied to a base-collector depletion region and one present in a base-collector junction.
PCT/US2003/006660 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region WO2003077284A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003230597A AU2003230597A1 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36182302P 2002-03-04 2002-03-04
US60/361,823 2002-03-04

Publications (2)

Publication Number Publication Date
WO2003077284A2 WO2003077284A2 (en) 2003-09-18
WO2003077284A3 true WO2003077284A3 (en) 2003-12-04

Family

ID=27805082

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2003/006506 WO2003077283A2 (en) 2002-03-04 2003-03-04 Drift-dominated detector
PCT/US2003/006660 WO2003077284A2 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2003/006506 WO2003077283A2 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Country Status (2)

Country Link
AU (2) AU2003225650A1 (en)
WO (2) WO2003077283A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010026576A2 (en) * 2008-09-02 2010-03-11 Gady Golan Photoelectric structure and method of manufacturing thereof
CN102064187B (en) * 2009-11-11 2013-02-13 中国科学院半导体研究所 Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof
CN105261639B (en) * 2014-07-18 2019-02-26 稳懋半导体股份有限公司 Heterojunction Bipolar Transistor
CN107104172B (en) * 2017-06-17 2019-09-20 东莞市天域半导体科技有限公司 A preparation method of SiC avalanche photodiode device epitaxial material
CN110797429B (en) * 2019-11-08 2021-02-02 中国科学院长春光学精密机械与物理研究所 Stress-controlled gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
US20210226045A1 (en) * 2020-01-22 2021-07-22 Visual Photonics Epitaxy Co., Ltd. Heterojunction bipolar transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US20020121674A1 (en) * 2000-11-27 2002-09-05 Kopin Corporation Biopolar transistor with lattice matched base layer
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6492664B2 (en) * 2000-06-27 2002-12-10 Nec Corporation Heterojunction bipolar transistor with reduced offset voltage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6492664B2 (en) * 2000-06-27 2002-12-10 Nec Corporation Heterojunction bipolar transistor with reduced offset voltage
US20020121674A1 (en) * 2000-11-27 2002-09-05 Kopin Corporation Biopolar transistor with lattice matched base layer

Also Published As

Publication number Publication date
AU2003225650A1 (en) 2003-09-22
AU2003230597A8 (en) 2003-09-22
WO2003077284A2 (en) 2003-09-18
WO2003077283A3 (en) 2003-12-24
AU2003230597A1 (en) 2003-09-22
AU2003225650A8 (en) 2003-09-22
WO2003077283A2 (en) 2003-09-18

Similar Documents

Publication Publication Date Title
US8853827B2 (en) Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact
EP2001052A3 (en) Semiconductor device and manufacturing method thereof
CN107248530B (en) A two-dimensional material/semiconductor heterojunction vertical tunneling transistor and its preparation method
WO2001031685A3 (en) InPSb/InAs BJT DEVICE AND METHOD OF MAKING
US5028973A (en) Bipolar transistor with high efficient emitter
ATE492031T1 (en) BIFET WITH A FET WITH ENHANCED LINEARITY AND MANUFACTUREABILITY
US20080116489A1 (en) Heterojunction bipolar transistor
WO2003077284A3 (en) Heterojunction bipolar transistor having thinned base-collector depletion region
CA1299771C (en) Heterojunction bipolar transistor with collector buffer layer
EP1391938A3 (en) Heterojunction bipolar transistor (hbt) having improved emitter-base grading structure
JP2004296819A (en) Semiconductor device
Ueda et al. A new vertical double diffused MOSFET—the self-aligned terraced-gate MOSFET
TW200629363A (en) Method and structure for a high performance heterojunction bipolar transistor
ATE411616T1 (en) BIPOLAR TRANSISTOR, SEMICONDUCTOR COMPONENT AND RELATED PRODUCTION METHOD
EP1285465B1 (en) Bipolar transistor
Girardot et al. High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
SG132668A1 (en) Self-aligned lateral heterojunction bipolar transistor
US7573080B1 (en) Transient suppression semiconductor device
Chiu et al. Base transit time in abrupt GaN/InGaN/GaN HBT's
JPH04234173A (en) Protection diode for vertical field effect transistors
Benoit et al. Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
TWI266353B (en) Semiconductor device and its manufacturing method
Kumar et al. A new surface accumulation layer transistor (SALTran) concept for current gain enhancement in bipolar transistors
Devi et al. A better TID hardened Dopingless Lateral Bipolar Transitor on SiGe-OI design
Chen et al. A novel contact process for power MOSFET's

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载