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WO2003041165A2 - Interface thermique electriquement conductrice - Google Patents

Interface thermique electriquement conductrice Download PDF

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Publication number
WO2003041165A2
WO2003041165A2 PCT/US2001/032544 US0132544W WO03041165A2 WO 2003041165 A2 WO2003041165 A2 WO 2003041165A2 US 0132544 W US0132544 W US 0132544W WO 03041165 A2 WO03041165 A2 WO 03041165A2
Authority
WO
WIPO (PCT)
Prior art keywords
flakes
heat transfer
transfer material
edges
microchip
Prior art date
Application number
PCT/US2001/032544
Other languages
English (en)
Other versions
WO2003041165A3 (fr
Inventor
Ignatius J. Rasiah
Original Assignee
Honeywell International, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International, Inc. filed Critical Honeywell International, Inc.
Priority to CA002454155A priority Critical patent/CA2454155A1/fr
Priority to JP2003543099A priority patent/JP4202923B2/ja
Priority to CNB018235581A priority patent/CN1319162C/zh
Priority to CNA2007100968120A priority patent/CN101038795A/zh
Priority to EP01988123A priority patent/EP1436835A2/fr
Priority to KR1020047001319A priority patent/KR100782235B1/ko
Priority to PCT/US2001/032544 priority patent/WO2003041165A2/fr
Priority to US10/483,370 priority patent/US7083850B2/en
Priority to TW091124081A priority patent/TW578180B/zh
Publication of WO2003041165A2 publication Critical patent/WO2003041165A2/fr
Publication of WO2003041165A3 publication Critical patent/WO2003041165A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1103—Making porous workpieces or articles with particular physical characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Definitions

  • the present invention relates to the manufacture of circuit boards and integrated circuit packages. More particularly, the invention relates to low storage modulus, electrically conductive thermal interfaces for integrated circuit packages.
  • Integrated circuits are well known industrial products, and are used for a wide variety of commercial and consumer electronic applications. They are particularly useful in large scale applications such as in industrial control equipment, as well as in small scale devices such as telephones, radios, and personal computers.
  • Cooling fans are often provided as an integral part of an electronic device or are separately attached thereto for increasing the surface area of the integrated circuit package which is exposed to air currents. Such fans are employed to increase the volume of air which is circulated within a device's housing.
  • U.S. patent 5,522,700 teaches the use of a typical fan device for dissipating heat from an electronic component.
  • U.S. patent 5,166,775 describes an air manifold mounted adjacent to an integrated circuit for directing air jets onto electronic devices mounted to the circuit .
  • the air manifold has an air inlet and a plurality of outlet nozzles positioned along the channel for directing air onto the electronic devices.
  • U.S. patent 4,620,216 describes a unitary heat sink for a semiconductor package having a plurality of cooling fin elements, which heat sink is used to cool high density integrated circuit modules.
  • U.S. patent 5,535,094 teaches the combined use of an air blower and a heat sink. It teaches a module which has an integral blower that cools an integrated circuit package. The blower is attached to a heat sink that is mounted to the integrated circuit package. Heat generated by the integrated circuit conducts to the heat sink. The blower generates a stream of air that flows across the heat sink and removes heat from the package.
  • Interfaces used in the semiconductor industry typically comprise metal interfaces or polymer adhesives filled with conductive fillers.
  • Metal interfaces such as solder, silver, and gold provide low resistivity, but have a high storage modulus and are not suitable for large IC dice.
  • polymer adhesives can be very low modulus, but their resistivity is too high.
  • thermal interfaces for use with an integrated circuit package or semiconductor die, which thermal interface has a low modulus as well as high thermal and electrical conductivity.
  • thermal interfaces to be capable of being assembled and processed at low temperatures, such as about 200°C or less.
  • a porous, flexible, resilient heat transfer material is formed, which material comprises network of metal flakes.
  • Such heat transfer materials are preferably produced by first forming a conductive paste comprising a volatile organic solvent and conductive metal flakes.
  • the conductive paste is heated to a temperature below the melting point of the metal flakes, thereby evaporating the solvent and sintering the flakes only at their edges.
  • the edges of the flakes are fused to the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes, thereby forming a network of metal flakes.
  • This network structure allows the heat transfer material to have a low storage modulus of less than about 10 GPa, while having good electrical resistance properties.
  • the invention provides a porous, flexible, resilient heat transfer material which comprises a network of metal flakes, said flakes having edges, which flakes are sintered only at their edges and are fused to the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes.
  • the invention further provides a method for forming a porous, flexible, resilient heat transfer material which comprises: a) forming a conductive paste comprising a solvent and conductive metal flakes having edges; and b) heating the conductive paste to a temperature below the melting point of the metal flakes, thereby evaporating the solvent and sintering the flakes only at their edges, thus fusing the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes, thereby forming a network of metal flakes.
  • the invention still further provides a method for conducting heat away from a microchip which comprises: a) forming a conductive paste comprising a solvent and conductive metal flakes having edges; b) attaching a layer of the conductive paste between a microchip and a heat spreader, thus forming a composite; d) heating the composite to a temperature below the melting point of the metal flakes, thereby evaporating the solvent and sintering the flakes only at their edges, thus fusing the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes, and forming a heat transfer material layer between the microchip and the heat spreader, which heat transfer material comprises a network of metal flakes.
  • FIG. 1 shows a top view of a layer of heat transfer material of the invention.
  • FIG. 2 shows a close-up top view of a layer of heat transfer material of the invention.
  • FIG. 3 shows a side view of a layer of heat transfer material of the invention.
  • FIG. 4 shows a side view of a layer of heat transfer material of the invention attached to a microchip.
  • FIG. 5 shows a side view of a layer of heat transfer material of the invention attached to a microchip and a heat spreader.
  • the invention relates to a porous, flexible, resilient heat transfer material which comprises network of metal flakes.
  • a conductive paste is first formed which comprises a mixture of metal flakes and a solvent.
  • the paste may be formed using any conventional method known in the art such as mixing and the like.
  • the metal flakes preferably comprise a metal such as aluminum, copper, zinc, tin, gold, palladium, lead and alloys and combinations thereof. Most preferably, the flakes comprise silver.
  • the flakes preferably have a thickness of from about 0.1 ⁇ m to about 2 ⁇ m, more preferably from about 0.1 ⁇ m to about 1 ⁇ m, and most preferably from about 0.1 ⁇ m to about .3 ⁇ m.
  • the flakes preferably have a diameter of from about 3 ⁇ m to about 100 ⁇ m, more preferably from about 20 ⁇ m to about 100 ⁇ m, and most preferably from about 50 ⁇ m to about 100 ⁇ m.
  • the each flake has edges which are thinner than the center of the flake.
  • the solvent preferably serves to lower the melting point of the metal flakes.
  • the solvent preferably comprises a volatile organic solvent having a boiling point of about 200 °C or less.
  • Suitable volatile organic solvents nonexclusively include alcohols, such as ethanol, propanol and butanol.
  • a preferred volatile organic solvent comprises butanol.
  • the conductive paste is heated such that the solvent evaporates away and the metal flakes are sintered only at their edges.
  • the flakes are thus fused to the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes, thereby forming a porous, flexible, resilient heat transfer material which is substantially absent of solvents and binders.
  • Heating of the conductive paste is preferably conducted at a temperature below the melting point of the metal flakes. In a preferred embodiment, the heating is conducted at a temperature ranging from about 100°C to about 200°C, more preferably from about 150°C to about 200°C, and most preferably from about 175°C to about 200°C.
  • the heat transfer material is produced in the form of a heat transfer material layer. This is preferably done by applying a layer of conductive paste to a surface of a substantially flat substrate, and heating the conductive paste layer as described above to form a heat transfer material layer. The heat transfer material layer may then optionally be removed from the substrate.
  • suitable substrates nonexclusively include heat spreaders, silicon die, and heat sinks.
  • a preferred substrate comprises silicon die.
  • the paste may be applied using any known conventional techniques such as by dispensing from a syringe..
  • the heat transfer material layer has a thickness of from about lO ⁇ m to about 50 ⁇ m, more preferably from about lO ⁇ m to about 35 ⁇ m, and most preferably from about 20 ⁇ m to about 30 ⁇ m.
  • the heat transfer material layer preferably comprises a storage modulus of less than about 10 GPa, more preferably from about IGPa to about 5GPa, and most preferably from about 1 GPa to about 3 GPa.
  • the heat transfer material layer also preferably comprises an electrical resistance of from about 1 x 10 "6 ohm/ cm to about lx 10 "4 ohm/cm, more preferably from about 1 x 10 "6 ohm/ cm to about 5 x 10 "5 ohm/cm, and most preferably from about 1 x 10 "6 ohm/ cm to about 2 x 10 "5 ohm/cm.
  • the heat transfer materials of this invention may be used for various purposes such as a thermal interface between a metal surface and a silicon die, or between heat emitting articles and heat absorbing articles, and the like.
  • a first surface of the heat transfer material layer is attached to a heat emitting article.
  • suitable heat emitting articles nonexclusively include microchips, multi-chip modules, laser diodes, and the like.
  • a preferred heat emitting article comprises a microchip.
  • a second surface of the heat transfer material layer may then optionally be attached to a heat absorbing article.
  • suitable heat absorbing articles nonexclusively include heat spreaders, heat sinks, vapor chambers, heat pipes, and the like.
  • a preferred heat absorbing article comprises a heat spreader.
  • Such heat emitting or heat absorbing articles may be attached to the heat transfer material layer using any suitable conventional method known in the art.
  • the heat transfer material layer is formed by first forming a composite which comprises a layer of conductive paste attached between a heat emitting article and a heat absorbing article. The entire composite is then heated to form a heat transfer material between the heat emitting article and the heat absorbing article.
  • the heat transfer materials of the invention are particularly useful in the production of microelectronic devices.
  • Silver flakes were mixed with an organic solvent to form a homogeneous paste. At least four pastes were mixed. The ratios of organic solvent to the metal flakes of the pastes are shown in Table 1 below.
  • a minimum of three slides per profile were prepared as follows: a. A 1" x 3" glass slide was cleaned with isopropyl alcohol and air dried. b. A glass slide was placed securely in a glass slide holder. c. Using the lines scribed on the holder as a guide, strips of tape were placed 100 mils apart, parallel to the length of the slide. The length of the applied strips was be at least 2.5" long. d. There were no wrinkles or air bubbles under the tape.
  • the silver paste was placed on one end of the slide. Using a razor blade maintained at an approximate 30 degree angle to the slide surface, the silver paste material was drawn towards the opposite end of the slide, and the material was squeezed between the tape strips.
  • the cross-sectional area (in ⁇ m 2 ) of the cured material was measured at three different locations along the tape strips.
  • the adhesion strength of the sintered metal flakes to three metal surfaces was tested using a die shear, to determine the bond strength of the silver paste.
  • the test surfaces were formed by coating silver paste onto nickel plated surfaces, silver spot plated surfaces, and bare copper surfaces. The metal surfaces were attached onto lead frames, and cured in an oven.
  • a substrate was set in the appropriate holding jig on a die shear tester. 2.
  • a die shear tool tip was aligned against the widest side of the element to be tested. The die shear tool was set as perpendicular to the substrate and as close as possible to the substrate without contracting the substrate surface.
  • the 'TEST' button was pressed on the tester's panel to initiate the shear test cycle.
  • Steps 1 through 4 were repeated until all elements were sheared on that substrate.
  • Adhesion strength were done with 100 x 100 mils die
  • the material did not sinter on nickel plated surfaces, while the adhesion on bare copper surface was rather low. Copper oxidizes at elevated temperatures and thus caused a barrier to sintering onto the surface.
  • the silver spot plated surface gave good adhesion at a peak temperature of 200 °C.
  • the adhesion was significantly lower at 180 °C.
  • the cure at 200 °C for Profile 2 however, had a higher level of sintering. The interface of failure there had been transferred to the die/paste interface where the adhesion to bare silicon was lower.
  • Adhesion strength were done with 100 x 100 mils die.
  • the adhesion for the silver spot plated surface was the highest, followed by the bare copper surface.
  • the nickel plated surface showed a minimal amount of adhesion.
  • This particular lot of material showed significantly less adhesion to the silver spot plated surface as compared to Lot #3. This may be due to the higher level of organic solvent within Lot #4.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un matériau de transfert de chaleur poreux, souple et élastique comprenant un réseau de flocons métalliques. De tels matériaux de transfert de chaleur sont, de préférence, obtenus, dans un premier temps, par formation d'une pâte conductrice comprenant un solvant volatil organique et des flocons métalliques conducteurs. La pâte conductrice est chauffée à une température inférieure au point de fusion des flocons métalliques, évaporant ainsi le solvant et frittant uniquement les bords des flocons qui sont fusionnés aux bords de flocons adjacents, de manière que des pores ouverts soient définis entre au moins quelques flocons parmi les flocons adjacents, formant ainsi un réseau de flocons métalliques. Grâce à cette structure en réseau, le matériau de transfert de chaleur présente aussi bien un faible module de stockage inférieur à environ 10 Gpa que de bonnes propriétés de résistance électrique.
PCT/US2001/032544 2001-10-18 2001-10-18 Interface thermique electriquement conductrice WO2003041165A2 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CA002454155A CA2454155A1 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice
JP2003543099A JP4202923B2 (ja) 2001-10-18 2001-10-18 熱伝導性材料、マイクロエレクトロニクス装置、熱伝導性材料を形成する方法及びマイクロチップから熱を伝導して取り去る方法
CNB018235581A CN1319162C (zh) 2001-10-18 2001-10-18 传热材料及其形成方法
CNA2007100968120A CN101038795A (zh) 2001-10-18 2001-10-18 导电膏及传热材料
EP01988123A EP1436835A2 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice
KR1020047001319A KR100782235B1 (ko) 2001-10-18 2001-10-18 소결된 금속 플레이크
PCT/US2001/032544 WO2003041165A2 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice
US10/483,370 US7083850B2 (en) 2001-10-18 2001-10-18 Electrically conductive thermal interface
TW091124081A TW578180B (en) 2001-10-18 2002-10-18 Sintered metal flakes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/032544 WO2003041165A2 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice

Publications (2)

Publication Number Publication Date
WO2003041165A2 true WO2003041165A2 (fr) 2003-05-15
WO2003041165A3 WO2003041165A3 (fr) 2003-07-24

Family

ID=21742921

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/032544 WO2003041165A2 (fr) 2001-10-18 2001-10-18 Interface thermique electriquement conductrice

Country Status (7)

Country Link
EP (1) EP1436835A2 (fr)
JP (1) JP4202923B2 (fr)
KR (1) KR100782235B1 (fr)
CN (2) CN1319162C (fr)
CA (1) CA2454155A1 (fr)
TW (1) TW578180B (fr)
WO (1) WO2003041165A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005107487A (ja) * 2003-09-26 2005-04-21 Samsung Sdi Co Ltd ディスプレイ装置及びプラズマディスプレイ装置
US9812624B2 (en) 2008-01-17 2017-11-07 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device

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TW200923975A (en) * 2007-10-12 2009-06-01 Cheil Ind Inc Composition for fabrication of electrode, electrode fabricated using the same, plasma display panel, and associated methods
CN101319775B (zh) * 2008-07-18 2010-06-09 东莞东海龙环保科技有限公司 功率型led灯具的高导热柔性填隙材料
KR101716397B1 (ko) * 2009-03-06 2017-03-14 도요 알루미늄 가부시키가이샤 도전성 페이스트 조성물 및 그를 이용하여 형성된 도전성 막
CN103079819B (zh) * 2010-08-31 2015-06-17 保力马科技(日本)株式会社 导热片
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
CN107709418B (zh) 2015-05-08 2021-04-27 汉高知识产权控股有限责任公司 可烧结的膜和膏及其使用方法
CN113632219A (zh) * 2019-03-20 2021-11-09 住友电木株式会社 导热性组合物和半导体装置
CN112207481A (zh) * 2020-09-09 2021-01-12 中山大学 一种低温无压烧结微米银焊膏及其制备方法和应用
CN113492281A (zh) * 2021-05-27 2021-10-12 中山大学 一种在裸铜上低温无压直接烧结的微米银焊膏及其制备方法和应用

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JPS63140292A (ja) * 1986-11-30 1988-06-11 Chuo Denki Kogyo Kk 多孔型放熱体
CN1019760B (zh) * 1987-06-11 1992-12-30 国家机械工业委员会上海材料研究所 由球形金属粉末制造多孔元件的方法
JPH07118701A (ja) * 1993-10-22 1995-05-09 Katayama Tokushu Kogyo Kk フレーク状金属粉末、金属多孔体およびフレーク状金属粉末の製造方法
JPH08213026A (ja) * 1994-11-28 1996-08-20 Katayama Tokushu Kogyo Kk 電池電極基板用金属多孔体、電池電極板およびその製造方法
JP3166060B2 (ja) * 1995-12-11 2001-05-14 三菱マテリアル株式会社 放熱シート
US5738936A (en) * 1996-06-27 1998-04-14 W. L. Gore & Associates, Inc. Thermally conductive polytetrafluoroethylene article
JP4174088B2 (ja) * 1997-07-14 2008-10-29 住友ベークライト株式会社 導電性樹脂ペースト及びこれを用いて製造された半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005107487A (ja) * 2003-09-26 2005-04-21 Samsung Sdi Co Ltd ディスプレイ装置及びプラズマディスプレイ装置
US9812624B2 (en) 2008-01-17 2017-11-07 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
US10573795B2 (en) 2008-01-17 2020-02-25 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
US10950770B2 (en) 2008-01-17 2021-03-16 Nichia Corporation Method for producing an electronic device
US11652197B2 (en) 2008-01-17 2023-05-16 Nichia Corporation Method for producing an electronic device

Also Published As

Publication number Publication date
CN1319162C (zh) 2007-05-30
CN1545731A (zh) 2004-11-10
KR100782235B1 (ko) 2007-12-05
WO2003041165A3 (fr) 2003-07-24
JP2005509293A (ja) 2005-04-07
CA2454155A1 (fr) 2003-05-15
EP1436835A2 (fr) 2004-07-14
TW578180B (en) 2004-03-01
CN101038795A (zh) 2007-09-19
KR20040051582A (ko) 2004-06-18
JP4202923B2 (ja) 2008-12-24

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