WO2002013260A3 - Circuit comprenant au moins deux corps semi-conducteurs et un corps de refroidissement - Google Patents
Circuit comprenant au moins deux corps semi-conducteurs et un corps de refroidissement Download PDFInfo
- Publication number
- WO2002013260A3 WO2002013260A3 PCT/EP2001/009223 EP0109223W WO0213260A3 WO 2002013260 A3 WO2002013260 A3 WO 2002013260A3 EP 0109223 W EP0109223 W EP 0109223W WO 0213260 A3 WO0213260 A3 WO 0213260A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- cooling body
- semiconductor bodies
- bodies
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2000138968 DE10038968A1 (de) | 2000-08-10 | 2000-08-10 | Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper |
| DE10038968.6 | 2000-08-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002013260A2 WO2002013260A2 (fr) | 2002-02-14 |
| WO2002013260A3 true WO2002013260A3 (fr) | 2002-04-25 |
Family
ID=7651913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2001/009223 WO2002013260A2 (fr) | 2000-08-10 | 2001-08-09 | Circuit comprenant au moins deux corps semi-conducteurs et un corps de refroidissement |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE10038968A1 (fr) |
| WO (1) | WO2002013260A2 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030224096A1 (en) | 2002-06-04 | 2003-12-04 | Novozymes A/S | Whey protein hydrolysate |
| DE102004007991B4 (de) * | 2004-02-18 | 2015-07-30 | Infineon Technologies Ag | Halbleiter-Schaltelement |
| DE102004056984A1 (de) * | 2004-11-25 | 2006-06-08 | Siemens Ag | Stromrichteranordnung |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4947234A (en) * | 1986-09-23 | 1990-08-07 | Siemens Aktiengesellschaft | Semiconductor component with power MOSFET and control circuit |
| US6031279A (en) * | 1996-09-02 | 2000-02-29 | Siemens Aktiengesellschaft | Power semiconductor component |
| US6055148A (en) * | 1997-07-19 | 2000-04-25 | U.S. Philips Corporation | Semiconductor device assemblies and circuits |
| US6069401A (en) * | 1996-10-29 | 2000-05-30 | Kabushiki Kaisha Toshiba | Semiconductor chip |
| EP1006578A2 (fr) * | 1998-11-30 | 2000-06-07 | Mitsubishi Denki Kabushiki Kaisha | Module semiconducteur de puissance |
| DE19902462A1 (de) * | 1999-01-22 | 2000-08-10 | Siemens Ag | Halbleiterbauelement mit Chip-on-Chip-Aufbau |
-
2000
- 2000-08-10 DE DE2000138968 patent/DE10038968A1/de not_active Withdrawn
-
2001
- 2001-08-09 WO PCT/EP2001/009223 patent/WO2002013260A2/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4947234A (en) * | 1986-09-23 | 1990-08-07 | Siemens Aktiengesellschaft | Semiconductor component with power MOSFET and control circuit |
| US6031279A (en) * | 1996-09-02 | 2000-02-29 | Siemens Aktiengesellschaft | Power semiconductor component |
| US6069401A (en) * | 1996-10-29 | 2000-05-30 | Kabushiki Kaisha Toshiba | Semiconductor chip |
| US6055148A (en) * | 1997-07-19 | 2000-04-25 | U.S. Philips Corporation | Semiconductor device assemblies and circuits |
| EP1006578A2 (fr) * | 1998-11-30 | 2000-06-07 | Mitsubishi Denki Kabushiki Kaisha | Module semiconducteur de puissance |
| DE19902462A1 (de) * | 1999-01-22 | 2000-08-10 | Siemens Ag | Halbleiterbauelement mit Chip-on-Chip-Aufbau |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10038968A1 (de) | 2002-03-07 |
| WO2002013260A2 (fr) | 2002-02-14 |
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