+

WO2002013260A3 - Circuit comprising at least two semiconductor bodies and a cooling body - Google Patents

Circuit comprising at least two semiconductor bodies and a cooling body Download PDF

Info

Publication number
WO2002013260A3
WO2002013260A3 PCT/EP2001/009223 EP0109223W WO0213260A3 WO 2002013260 A3 WO2002013260 A3 WO 2002013260A3 EP 0109223 W EP0109223 W EP 0109223W WO 0213260 A3 WO0213260 A3 WO 0213260A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
cooling body
semiconductor bodies
bodies
semiconductor
Prior art date
Application number
PCT/EP2001/009223
Other languages
German (de)
French (fr)
Other versions
WO2002013260A2 (en
Inventor
Martin Feldtkeller
Original Assignee
Infineon Technologies Ag
Martin Feldtkeller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Martin Feldtkeller filed Critical Infineon Technologies Ag
Publication of WO2002013260A2 publication Critical patent/WO2002013260A2/en
Publication of WO2002013260A3 publication Critical patent/WO2002013260A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
PCT/EP2001/009223 2000-08-10 2001-08-09 Circuit comprising at least two semiconductor bodies and a cooling body WO2002013260A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2000138968 DE10038968A1 (en) 2000-08-10 2000-08-10 Circuit arrangement with at least two semiconductor bodies and a heat sink
DE10038968.6 2000-08-10

Publications (2)

Publication Number Publication Date
WO2002013260A2 WO2002013260A2 (en) 2002-02-14
WO2002013260A3 true WO2002013260A3 (en) 2002-04-25

Family

ID=7651913

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/009223 WO2002013260A2 (en) 2000-08-10 2001-08-09 Circuit comprising at least two semiconductor bodies and a cooling body

Country Status (2)

Country Link
DE (1) DE10038968A1 (en)
WO (1) WO2002013260A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030224096A1 (en) 2002-06-04 2003-12-04 Novozymes A/S Whey protein hydrolysate
DE102004007991B4 (en) * 2004-02-18 2015-07-30 Infineon Technologies Ag Semiconductor switching element
DE102004056984A1 (en) * 2004-11-25 2006-06-08 Siemens Ag Converter arrangement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947234A (en) * 1986-09-23 1990-08-07 Siemens Aktiengesellschaft Semiconductor component with power MOSFET and control circuit
US6031279A (en) * 1996-09-02 2000-02-29 Siemens Aktiengesellschaft Power semiconductor component
US6055148A (en) * 1997-07-19 2000-04-25 U.S. Philips Corporation Semiconductor device assemblies and circuits
US6069401A (en) * 1996-10-29 2000-05-30 Kabushiki Kaisha Toshiba Semiconductor chip
EP1006578A2 (en) * 1998-11-30 2000-06-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module
DE19902462A1 (en) * 1999-01-22 2000-08-10 Siemens Ag Chip-on-chip semiconductor component arrangement

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947234A (en) * 1986-09-23 1990-08-07 Siemens Aktiengesellschaft Semiconductor component with power MOSFET and control circuit
US6031279A (en) * 1996-09-02 2000-02-29 Siemens Aktiengesellschaft Power semiconductor component
US6069401A (en) * 1996-10-29 2000-05-30 Kabushiki Kaisha Toshiba Semiconductor chip
US6055148A (en) * 1997-07-19 2000-04-25 U.S. Philips Corporation Semiconductor device assemblies and circuits
EP1006578A2 (en) * 1998-11-30 2000-06-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module
DE19902462A1 (en) * 1999-01-22 2000-08-10 Siemens Ag Chip-on-chip semiconductor component arrangement

Also Published As

Publication number Publication date
DE10038968A1 (en) 2002-03-07
WO2002013260A2 (en) 2002-02-14

Similar Documents

Publication Publication Date Title
EP1324491A4 (en) Timer circuit and semiconductor memory incorporating the timer circuit
GB9907021D0 (en) Switch circuit and semiconductor switch for battery-powered equipment
SG96247A1 (en) Level shift circuit and semiconductor integrated circuit
SG79292A1 (en) Semiconductor integrated circuit and its manufacturing method
GB0027232D0 (en) Semiconductor integrated circuit fabrication
GB2372601B (en) Semiconductor integrated circuit
GB2368669B (en) Integrated circuit configuration
GB0120186D0 (en) Integrated circuit
EP1220450B8 (en) Semiconductor integrated circuit
GB2353496B (en) Encapsulating semiconducttor integrated circuits
GB0009913D0 (en) Integrated circuits
GB2364837B (en) Mixed-signal circuitry and integrated circuit devices
GB2382923B (en) Semiconductor integrated circuit and its layout method
GB2368725B (en) Semiconductor memory device and fabrication
GB0029162D0 (en) Integrated circuit device
GB0130923D0 (en) Semiconductor device manufacture and design
GB0125657D0 (en) Semiconductor manufacturing
GB2358965B (en) Three dimensional circuit body and method of manufacturing the same
WO2002013260A3 (en) Circuit comprising at least two semiconductor bodies and a cooling body
GB2370687B (en) An integrated circuit package
IL138058A0 (en) Integrated circuits
GB0126406D0 (en) Integrated circuit
GB2367428B (en) Integrated circuit
GB9804177D0 (en) Semiconductor switch devices and their manufacture
GB9818895D0 (en) Integrated circuits

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载