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WO2002013257A3 - Element de commutation a semi-conducteurs comportant deux electrodes de commande et pouvant etre commande par effet de champ - Google Patents

Element de commutation a semi-conducteurs comportant deux electrodes de commande et pouvant etre commande par effet de champ Download PDF

Info

Publication number
WO2002013257A3
WO2002013257A3 PCT/EP2001/008718 EP0108718W WO0213257A3 WO 2002013257 A3 WO2002013257 A3 WO 2002013257A3 EP 0108718 W EP0108718 W EP 0108718W WO 0213257 A3 WO0213257 A3 WO 0213257A3
Authority
WO
WIPO (PCT)
Prior art keywords
controlled
field effect
switch element
semiconductor switch
control electrodes
Prior art date
Application number
PCT/EP2001/008718
Other languages
German (de)
English (en)
Other versions
WO2002013257A2 (fr
Inventor
Franz Hirler
Jenoe Tihanyl
Wolfgang Werner
Original Assignee
Infineon Technologies Ag
Franz Hirler
Jenoe Tihanyl
Wolfgang Werner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Franz Hirler, Jenoe Tihanyl, Wolfgang Werner filed Critical Infineon Technologies Ag
Publication of WO2002013257A2 publication Critical patent/WO2002013257A2/fr
Publication of WO2002013257A3 publication Critical patent/WO2002013257A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices

Landscapes

  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs pouvant être commandé par effet de champ. Ledit dispositif comporte un corps à semi-conducteurs (100) présentant une première et une deuxième zones de contact dopées (20, 22, 24, 30), des électrodes de raccordement (90, 92) destinées à l'application de potentiels d'alimentation étant raccordées auxdites zones de contact. Une première électrode de commande (40, 42, 44 ; 48, 49) est isolée par rapport au corps à semi-conducteurs (100 ; 200) et peut être raccordée à un premier potentiel de commande. Une deuxième électrode de commande (60, 62, 64 ; 66 ; 68 ; 67, 69 ; 61, 63) est disposée de manière adjacente par rapport à la première électrode (40, 42, 44 ; 48, 49), cette deuxième électrode étant logée de façon isolée dans le corps à semi-conducteurs (100) et pouvant être raccordée à un deuxième potentiel de commande.
PCT/EP2001/008718 2000-08-04 2001-07-27 Element de commutation a semi-conducteurs comportant deux electrodes de commande et pouvant etre commande par effet de champ WO2002013257A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10038177A DE10038177A1 (de) 2000-08-04 2000-08-04 Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
DE10038177.4 2000-08-04

Publications (2)

Publication Number Publication Date
WO2002013257A2 WO2002013257A2 (fr) 2002-02-14
WO2002013257A3 true WO2002013257A3 (fr) 2002-09-19

Family

ID=7651380

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008718 WO2002013257A2 (fr) 2000-08-04 2001-07-27 Element de commutation a semi-conducteurs comportant deux electrodes de commande et pouvant etre commande par effet de champ

Country Status (2)

Country Link
DE (1) DE10038177A1 (fr)
WO (1) WO2002013257A2 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1170803A3 (fr) * 2000-06-08 2002-10-09 Siliconix Incorporated MOSFET à grille en tranchée et sa méthode de fabrication
TW543146B (en) 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
DE10203164B4 (de) * 2002-01-28 2005-06-16 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
DE10211543B4 (de) * 2002-03-15 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung
DE10234996B4 (de) * 2002-03-19 2008-01-03 Infineon Technologies Ag Verfahren zur Herstellung einer Transistoranordnung mit Trench-Transistorzellen mit Feldelektrode
US7091573B2 (en) 2002-03-19 2006-08-15 Infineon Technologies Ag Power transistor
TWI248136B (en) 2002-03-19 2006-01-21 Infineon Technologies Ag Method for fabricating a transistor arrangement having trench transistor cells having a field electrode
AU2003232995A1 (en) 2002-05-31 2003-12-19 Koninklijke Philips Electronics N.V. Trench-gate semiconductor device and method of manufacturing
WO2003103056A2 (fr) * 2002-05-31 2003-12-11 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur a tranchee/grille
CN100514672C (zh) * 2002-08-23 2009-07-15 快捷半导体有限公司 用于改进mos栅控从而降低米勒电容和开关损失的方法和装置
CN100508211C (zh) 2003-01-21 2009-07-01 西北大学 快速开关功率绝缘栅半导体器件
FR2850791B1 (fr) * 2003-01-30 2006-01-20 St Microelectronics Sa Composant unipolaire vertical
WO2005065385A2 (fr) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Dispositifs d'energie a semi-conducteurs et procedes de fabrication associes
US7482654B2 (en) 2004-04-20 2009-01-27 International Rectifier Corporation MOSgated power semiconductor device with source field electrode
DE102004021050A1 (de) * 2004-04-29 2005-11-24 Infineon Technologies Ag Feldeffekt-Halbleiterbauelement
DE112005001434B4 (de) * 2004-06-25 2018-06-07 International Rectifier Corporation MOS-gatterverknüpftes Leistungshalbleiter-Bauelement mit Source-Feldelektrode
US7554153B2 (en) 2006-03-07 2009-06-30 International Rectifier Corporation Power semiconductor device
DE102006026943B4 (de) 2006-06-09 2011-01-05 Infineon Technologies Austria Ag Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7492212B1 (en) * 2007-08-21 2009-02-17 Infineon Technologies Ag Adaptive capacitance for transistor
US8357971B2 (en) 2007-10-29 2013-01-22 Nxp B.V. Trench gate MOSFET and method of manufacturing the same
US8581342B2 (en) 2008-06-20 2013-11-12 Infineon Technologies Austria Ag Semiconductor device with field electrode and method
US9099419B2 (en) 2012-10-09 2015-08-04 Infineon Technologies Ag Test method and test arrangement
US9263552B2 (en) 2014-06-05 2016-02-16 Infineon Technologies Ag MOS-transistor with separated electrodes arranged in a trench
DE102014109926A1 (de) * 2014-07-15 2016-01-21 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer Vielzahl von Transistorzellen und Herstellungsverfahren
DE102014111981B4 (de) * 2014-08-21 2020-08-13 Infineon Technologies Ag Halbleiterschaltvorrichtung mit Ladungsspeicherstruktur
DE102014112338A1 (de) 2014-08-28 2016-03-03 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
JP6462367B2 (ja) 2015-01-13 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置
JP6531026B2 (ja) 2015-10-20 2019-06-12 株式会社 日立パワーデバイス 電力変換装置
JP6864640B2 (ja) * 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345380A2 (fr) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Procédé de fabrication d'un dispositif semi-conducteur
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
WO1994003922A1 (fr) * 1992-08-07 1994-02-17 Advanced Power Technology, Inc. Structure de dispositif de puissance a haute densite et procede pour sa fabrication
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
EP1170803A2 (fr) * 2000-06-08 2002-01-09 Siliconix Incorporated MOSFET à grille en tranchée et sa méthode de fabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345380A2 (fr) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Procédé de fabrication d'un dispositif semi-conducteur
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
WO1994003922A1 (fr) * 1992-08-07 1994-02-17 Advanced Power Technology, Inc. Structure de dispositif de puissance a haute densite et procede pour sa fabrication
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
EP1170803A2 (fr) * 2000-06-08 2002-01-09 Siliconix Incorporated MOSFET à grille en tranchée et sa méthode de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XU S ET AL: "Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance", PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, TOULOUSE, FR, 22 May 2000 (2000-05-22) - 25 May 2000 (2000-05-25), IEEE, Piscataway, NJ, USA, pages 385 - 388, XP002200791, ISBN: 0-7803-6269-1 *

Also Published As

Publication number Publication date
WO2002013257A2 (fr) 2002-02-14
DE10038177A1 (de) 2002-02-21

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