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WO2002013257A3 - Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect - Google Patents

Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect Download PDF

Info

Publication number
WO2002013257A3
WO2002013257A3 PCT/EP2001/008718 EP0108718W WO0213257A3 WO 2002013257 A3 WO2002013257 A3 WO 2002013257A3 EP 0108718 W EP0108718 W EP 0108718W WO 0213257 A3 WO0213257 A3 WO 0213257A3
Authority
WO
WIPO (PCT)
Prior art keywords
controlled
field effect
switch element
semiconductor switch
control electrodes
Prior art date
Application number
PCT/EP2001/008718
Other languages
German (de)
French (fr)
Other versions
WO2002013257A2 (en
Inventor
Franz Hirler
Jenoe Tihanyl
Wolfgang Werner
Original Assignee
Infineon Technologies Ag
Franz Hirler
Jenoe Tihanyl
Wolfgang Werner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Franz Hirler, Jenoe Tihanyl, Wolfgang Werner filed Critical Infineon Technologies Ag
Publication of WO2002013257A2 publication Critical patent/WO2002013257A2/en
Publication of WO2002013257A3 publication Critical patent/WO2002013257A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices

Landscapes

  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to a semiconductor device which can be controlled by means of a field effect. Said device contains a semiconductor body (100) comprising a doped first and second contact area (20, 22, 24, 30) to which connecting electrodes (90, 92) for applying power supply potential are connected. A first control electrode (40, 42, 44; 48, 49) is insulated in relation to the semiconductor body (100; 200) and can be connected to a first control potential. A second control electrode (60, 62, 64; 66, 68; 67, 69; 61, 63) is arranged adjacently in relation to the first control electrode (40, 42, 44; 48, 49). Said second control electrode is arranged in the semiconductor body in an insulated manner and can be connected to a second control potential.
PCT/EP2001/008718 2000-08-04 2001-07-27 Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect WO2002013257A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10038177.4 2000-08-04
DE10038177A DE10038177A1 (en) 2000-08-04 2000-08-04 Semiconductor switching element with two control electrodes which can be controlled by means of a field effect

Publications (2)

Publication Number Publication Date
WO2002013257A2 WO2002013257A2 (en) 2002-02-14
WO2002013257A3 true WO2002013257A3 (en) 2002-09-19

Family

ID=7651380

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008718 WO2002013257A2 (en) 2000-08-04 2001-07-27 Semiconductor switch element comprising two control electrodes, which can be controlled by means of field effect

Country Status (2)

Country Link
DE (1) DE10038177A1 (en)
WO (1) WO2002013257A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1170803A3 (en) * 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
TW543146B (en) 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
DE10203164B4 (en) * 2002-01-28 2005-06-16 Infineon Technologies Ag Power semiconductor component and method for its production
DE10211543B4 (en) * 2002-03-15 2005-06-30 Infineon Technologies Ag Circuit arrangement with a field effect transistor and method for operating the circuit arrangement
US7091573B2 (en) 2002-03-19 2006-08-15 Infineon Technologies Ag Power transistor
TWI248136B (en) 2002-03-19 2006-01-21 Infineon Technologies Ag Method for fabricating a transistor arrangement having trench transistor cells having a field electrode
DE10234996B4 (en) * 2002-03-19 2008-01-03 Infineon Technologies Ag Method for producing a transistor arrangement with trench transistor cells with field electrode
US7232726B2 (en) 2002-05-31 2007-06-19 Nxp, B.V. Trench-gate semiconductor device and method of manufacturing
US7122860B2 (en) 2002-05-31 2006-10-17 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices
CN100514672C (en) * 2002-08-23 2009-07-15 快捷半导体有限公司 Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
CN100508211C (en) 2003-01-21 2009-07-01 西北大学 Fast Switching Power Insulated Gate Semiconductor Devices
FR2850791B1 (en) 2003-01-30 2006-01-20 St Microelectronics Sa VERTICAL UNIPOLAR COMPONENT
JP4903055B2 (en) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション Power semiconductor device and manufacturing method thereof
US7482654B2 (en) 2004-04-20 2009-01-27 International Rectifier Corporation MOSgated power semiconductor device with source field electrode
DE102004021050A1 (en) * 2004-04-29 2005-11-24 Infineon Technologies Ag Field effect semiconductor device, e.g. depletion trench gate FET, has p-type region embedded in n-type semiconductor body near insulating layer and connected to gate electrode
WO2006004746A2 (en) * 2004-06-25 2006-01-12 International Rectifier Corporation Mosgated power semiconductor device with source field electrode
US7554153B2 (en) 2006-03-07 2009-06-30 International Rectifier Corporation Power semiconductor device
DE102006026943B4 (en) * 2006-06-09 2011-01-05 Infineon Technologies Austria Ag By field effect controllable trench transistor with two control electrodes
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7492212B1 (en) * 2007-08-21 2009-02-17 Infineon Technologies Ag Adaptive capacitance for transistor
EP2206154B1 (en) 2007-10-29 2011-06-29 Nxp B.V. Trench gate MOSFET and method of manufacturing the same
US8581342B2 (en) 2008-06-20 2013-11-12 Infineon Technologies Austria Ag Semiconductor device with field electrode and method
US9099419B2 (en) 2012-10-09 2015-08-04 Infineon Technologies Ag Test method and test arrangement
US9263552B2 (en) 2014-06-05 2016-02-16 Infineon Technologies Ag MOS-transistor with separated electrodes arranged in a trench
DE102014109926A1 (en) * 2014-07-15 2016-01-21 Infineon Technologies Austria Ag A semiconductor device having a plurality of transistor cells and manufacturing methods
DE102014111981B4 (en) * 2014-08-21 2020-08-13 Infineon Technologies Ag Semiconductor switching device with charge storage structure
DE102014112338A1 (en) 2014-08-28 2016-03-03 Infineon Technologies Austria Ag Semiconductor device and method for manufacturing a semiconductor device
JP6462367B2 (en) 2015-01-13 2019-01-30 ルネサスエレクトロニクス株式会社 Semiconductor device
JP6531026B2 (en) 2015-10-20 2019-06-12 株式会社 日立パワーデバイス Power converter
JP6864640B2 (en) * 2018-03-19 2021-04-28 株式会社東芝 Semiconductor devices and their control methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345380A2 (en) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Manufacture of a semiconductor device
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
WO1994003922A1 (en) * 1992-08-07 1994-02-17 Advanced Power Technology, Inc. High density power device structure and fabrication process
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
EP1170803A2 (en) * 2000-06-08 2002-01-09 Siliconix Incorporated Trench gate MOSFET and method of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345380A2 (en) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Manufacture of a semiconductor device
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
WO1994003922A1 (en) * 1992-08-07 1994-02-17 Advanced Power Technology, Inc. High density power device structure and fabrication process
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
EP1170803A2 (en) * 2000-06-08 2002-01-09 Siliconix Incorporated Trench gate MOSFET and method of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XU S ET AL: "Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance", PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, TOULOUSE, FR, 22 May 2000 (2000-05-22) - 25 May 2000 (2000-05-25), IEEE, Piscataway, NJ, USA, pages 385 - 388, XP002200791, ISBN: 0-7803-6269-1 *

Also Published As

Publication number Publication date
WO2002013257A2 (en) 2002-02-14
DE10038177A1 (en) 2002-02-21

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