WO2002003420A3 - Integrated circuit radio architectures - Google Patents
Integrated circuit radio architectures Download PDFInfo
- Publication number
- WO2002003420A3 WO2002003420A3 PCT/US2001/016730 US0116730W WO0203420A3 WO 2002003420 A3 WO2002003420 A3 WO 2002003420A3 US 0116730 W US0116730 W US 0116730W WO 0203420 A3 WO0203420 A3 WO 0203420A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- integrated circuit
- circuits
- fabricated
- silicon substrate
- circuit radio
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Two-way radio semiconductor structures and methods for making such structures are provided. The integrated structure includes a single monolithic integrated circuit (401) on which processing circuitry, such as a CPU (420) and a DSP (418), is fabricated within a silicon substrate structure. Through appropriate use of an intervening layer, compound semiconductor material, such as GaAs, can be layered atop the silicon substrate. That compound material can then be utilized for the RF circuits in the radio. Thus, the RF circuits and the processing circuits may be fabricated on a single IC, thereby reducing power and size requirements of the assembled device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2001263398A AU2001263398A1 (en) | 2000-06-30 | 2001-05-21 | Integrated circuit radio architectures |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60723900A | 2000-06-30 | 2000-06-30 | |
| US09/607,239 | 2000-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002003420A2 WO2002003420A2 (en) | 2002-01-10 |
| WO2002003420A3 true WO2002003420A3 (en) | 2002-06-06 |
Family
ID=24431410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2001/016730 WO2002003420A2 (en) | 2000-06-30 | 2001-05-21 | Integrated circuit radio architectures |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2001263398A1 (en) |
| WO (1) | WO2002003420A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11158575B2 (en) * | 2018-06-05 | 2021-10-26 | Macom Technology Solutions Holdings, Inc. | Parasitic capacitance reduction in GaN-on-silicon devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5596205A (en) * | 1993-07-12 | 1997-01-21 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
-
2001
- 2001-05-21 AU AU2001263398A patent/AU2001263398A1/en not_active Abandoned
- 2001-05-21 WO PCT/US2001/016730 patent/WO2002003420A2/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5596205A (en) * | 1993-07-12 | 1997-01-21 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002003420A2 (en) | 2002-01-10 |
| AU2001263398A1 (en) | 2002-01-14 |
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