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WO2001035504A3 - Ensemble pour laser a grande puissance - Google Patents

Ensemble pour laser a grande puissance Download PDF

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Publication number
WO2001035504A3
WO2001035504A3 PCT/DE2000/003979 DE0003979W WO0135504A3 WO 2001035504 A3 WO2001035504 A3 WO 2001035504A3 DE 0003979 W DE0003979 W DE 0003979W WO 0135504 A3 WO0135504 A3 WO 0135504A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
laser
laser arrangement
powered laser
gain elements
Prior art date
Application number
PCT/DE2000/003979
Other languages
German (de)
English (en)
Other versions
WO2001035504A2 (fr
Inventor
Christian Hanke
Original Assignee
Infineon Technologies Ag
Christian Hanke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Christian Hanke filed Critical Infineon Technologies Ag
Publication of WO2001035504A2 publication Critical patent/WO2001035504A2/fr
Publication of WO2001035504A3 publication Critical patent/WO2001035504A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un ensemble (15), dans lequel des éléments de gain à semiconducteurs, pompés électriquement, sont montés en série optiquement et montés en parallèle thermiquement et électriquement. Cet ensemble sert de résonateur laser hybride ou d'amplificateur laser. Le rayonnement laser (14) est réfléchi au moyen d'un réflecteur externe (23) et de réflecteurs internes postérieurs, d'un élément de gain à l'autre, et amplifié dans la zone active des éléments de gain, appropriée pour une amplification du rayon et pompée électriquement par l'intermédiaire de connexions électriques (18). Il est ainsi possible d'obtenir une qualité de rayon et une puissance de sortie élevées.
PCT/DE2000/003979 1999-11-10 2000-11-07 Ensemble pour laser a grande puissance WO2001035504A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19954093.4 1999-11-10
DE19954093A DE19954093A1 (de) 1999-11-10 1999-11-10 Anordnung für Hochleistungslaser

Publications (2)

Publication Number Publication Date
WO2001035504A2 WO2001035504A2 (fr) 2001-05-17
WO2001035504A3 true WO2001035504A3 (fr) 2001-12-06

Family

ID=7928563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003979 WO2001035504A2 (fr) 1999-11-10 2000-11-07 Ensemble pour laser a grande puissance

Country Status (2)

Country Link
DE (1) DE19954093A1 (fr)
WO (1) WO2001035504A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535679A (ja) * 2001-07-12 2004-11-25 テクストロン システムズ コーポレーション ジグザグレーザおよび光増幅器のための半導体
DE102004040080B4 (de) * 2004-07-29 2010-05-12 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiter-Laservorrichtung
WO2007100341A2 (fr) * 2005-04-29 2007-09-07 Massachusetts Institute Of Technology Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
DE102006061532A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit mehreren monolithisch integrierten Laserdioden
US7801195B2 (en) * 2008-02-14 2010-09-21 Koninklijke Philips Electronics N.V. Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs
WO2015055600A1 (fr) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Dispositif laser compact
JP6862658B2 (ja) * 2016-02-15 2021-04-21 株式会社リコー 光増幅器、光増幅器の駆動方法及び光増幅方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555595A (en) * 1978-10-19 1980-04-23 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light amplifier
EP0342953A2 (fr) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Amplificateur optique à semi-conducteur
US5696786A (en) * 1993-04-15 1997-12-09 The United States Of America As Represented By The Secretary Of The Air Force Solid-state laser system
US5856990A (en) * 1993-09-10 1999-01-05 Telefonaktiebolaget Lm Ericsson Optical amplifying device
WO1999039405A2 (fr) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Puce de laser a semi-conducteur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
SE501722C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Ytemitterande laseranordning med vertikal kavitet
JPH08162717A (ja) * 1994-12-07 1996-06-21 Mitsubishi Heavy Ind Ltd 面発光半導体レーザ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555595A (en) * 1978-10-19 1980-04-23 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light amplifier
EP0342953A2 (fr) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Amplificateur optique à semi-conducteur
US5696786A (en) * 1993-04-15 1997-12-09 The United States Of America As Represented By The Secretary Of The Air Force Solid-state laser system
US5856990A (en) * 1993-09-10 1999-01-05 Telefonaktiebolaget Lm Ericsson Optical amplifying device
WO1999039405A2 (fr) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Puce de laser a semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 004, no. 087 (E - 016) 21 June 1980 (1980-06-21) *

Also Published As

Publication number Publication date
WO2001035504A2 (fr) 2001-05-17
DE19954093A1 (de) 2001-05-23

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