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WO2001035504A3 - High-powered laser arrangement - Google Patents

High-powered laser arrangement Download PDF

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Publication number
WO2001035504A3
WO2001035504A3 PCT/DE2000/003979 DE0003979W WO0135504A3 WO 2001035504 A3 WO2001035504 A3 WO 2001035504A3 DE 0003979 W DE0003979 W DE 0003979W WO 0135504 A3 WO0135504 A3 WO 0135504A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
laser
laser arrangement
powered laser
gain elements
Prior art date
Application number
PCT/DE2000/003979
Other languages
German (de)
French (fr)
Other versions
WO2001035504A2 (en
Inventor
Christian Hanke
Original Assignee
Infineon Technologies Ag
Christian Hanke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Christian Hanke filed Critical Infineon Technologies Ag
Publication of WO2001035504A2 publication Critical patent/WO2001035504A2/en
Publication of WO2001035504A3 publication Critical patent/WO2001035504A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

The invention relates to an array (15), which serves as a hybrid laser resonator, or laser amplifier, in which electrically pumped semiconductor gain elements are optically connected in series and thermally and electrically connected in parallel. The laser radiation (14) is reflected from one gain element to the next by means of an external reflector (23) and internal rear-facing reflectors, then amplified in the active zone of the gain elements, which are suitable for radiation amplification and are electrically pumped via connectors (18). A high quality of radiation can thus be achieved, with a high output power.
PCT/DE2000/003979 1999-11-10 2000-11-07 High-powered laser arrangement WO2001035504A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19954093.4 1999-11-10
DE19954093A DE19954093A1 (en) 1999-11-10 1999-11-10 Arrangement for high power lasers

Publications (2)

Publication Number Publication Date
WO2001035504A2 WO2001035504A2 (en) 2001-05-17
WO2001035504A3 true WO2001035504A3 (en) 2001-12-06

Family

ID=7928563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003979 WO2001035504A2 (en) 1999-11-10 2000-11-07 High-powered laser arrangement

Country Status (2)

Country Link
DE (1) DE19954093A1 (en)
WO (1) WO2001035504A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535679A (en) * 2001-07-12 2004-11-25 テクストロン システムズ コーポレーション Semiconductors for zigzag lasers and optical amplifiers
DE102004040080B4 (en) * 2004-07-29 2010-05-12 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
WO2007100341A2 (en) * 2005-04-29 2007-09-07 Massachusetts Institute Of Technology Grazing incidence slab semiconductor laser system and method
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
DE102006061532A1 (en) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser with a plurality of monolithically integrated laser diodes
US7801195B2 (en) * 2008-02-14 2010-09-21 Koninklijke Philips Electronics N.V. Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs
WO2015055600A1 (en) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Compact laser device
JP6862658B2 (en) * 2016-02-15 2021-04-21 株式会社リコー Optical amplifier, driving method of optical amplifier and optical amplification method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555595A (en) * 1978-10-19 1980-04-23 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light amplifier
EP0342953A2 (en) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor optical amplifying element
US5696786A (en) * 1993-04-15 1997-12-09 The United States Of America As Represented By The Secretary Of The Air Force Solid-state laser system
US5856990A (en) * 1993-09-10 1999-01-05 Telefonaktiebolaget Lm Ericsson Optical amplifying device
WO1999039405A2 (en) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Semiconductor laser chip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
JPH0690063A (en) * 1992-07-20 1994-03-29 Toyota Motor Corp Semiconductor laser
SE501722C2 (en) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Surface emitting laser device with vertical cavity
JPH08162717A (en) * 1994-12-07 1996-06-21 Mitsubishi Heavy Ind Ltd Surface light emitting semiconductor laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555595A (en) * 1978-10-19 1980-04-23 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light amplifier
EP0342953A2 (en) * 1988-05-17 1989-11-23 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor optical amplifying element
US5696786A (en) * 1993-04-15 1997-12-09 The United States Of America As Represented By The Secretary Of The Air Force Solid-state laser system
US5856990A (en) * 1993-09-10 1999-01-05 Telefonaktiebolaget Lm Ericsson Optical amplifying device
WO1999039405A2 (en) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Semiconductor laser chip

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 004, no. 087 (E - 016) 21 June 1980 (1980-06-21) *

Also Published As

Publication number Publication date
WO2001035504A2 (en) 2001-05-17
DE19954093A1 (en) 2001-05-23

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