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WO2001086352A3 - Polymeres destines a des compositions photoresist pour microlithographie - Google Patents

Polymeres destines a des compositions photoresist pour microlithographie Download PDF

Info

Publication number
WO2001086352A3
WO2001086352A3 PCT/US2001/014520 US0114520W WO0186352A3 WO 2001086352 A3 WO2001086352 A3 WO 2001086352A3 US 0114520 W US0114520 W US 0114520W WO 0186352 A3 WO0186352 A3 WO 0186352A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist compositions
microlithography
polymers
nitrile
transparency
Prior art date
Application number
PCT/US2001/014520
Other languages
English (en)
Other versions
WO2001086352A2 (fr
Inventor
Michael Fryd
Mookkan Periyasamy
Frank Leonard Schadt Iii
Original Assignee
Du Pont
Michael Fryd
Mookkan Periyasamy
Frank Leonard Schadt Iii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Michael Fryd, Mookkan Periyasamy, Frank Leonard Schadt Iii filed Critical Du Pont
Priority to JP2001583241A priority Critical patent/JP2003532932A/ja
Priority to EP01933046A priority patent/EP1279069A2/fr
Priority to US10/257,900 priority patent/US6951705B2/en
Priority to AU2001259509A priority patent/AU2001259509A1/en
Publication of WO2001086352A2 publication Critical patent/WO2001086352A2/fr
Publication of WO2001086352A3 publication Critical patent/WO2001086352A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention concerne des polymères renfermant un nitrile/vinyle éther destinés à des compositions photorésist et des procédés de microlithographie utilisant lesdites compositions. Celles-ci comprennent 1) au moins un composé éthyléniquement insaturé renfermant un vinyle éther et 2) un composé renfermant du nitrile, par exemple, de l'acrylonitrile, ces composés mis ensemble conférant une transparence ultraviolette (UV) élevée et un pouvoir de développement dans un milieu basique. Dans certains modes de réalisation, ces compositions photorésist comprennent en outre un groupe fluoroalcool. Les compositions photorésist selon la présente invention possèdent une transparence UV élevée, surtout à des longueurs d'onde courtes, par exemple, 157 nm et 193 nm, ces propriétés les rendant utiles pour une lithographie à ces longueurs d'onde courtes.
PCT/US2001/014520 2000-05-05 2001-05-04 Polymeres destines a des compositions photoresist pour microlithographie WO2001086352A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001583241A JP2003532932A (ja) 2000-05-05 2001-05-04 マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー
EP01933046A EP1279069A2 (fr) 2000-05-05 2001-05-04 Polymeres destines a des compositions photoresist pour microlithographie
US10/257,900 US6951705B2 (en) 2000-05-05 2001-05-04 Polymers for photoresist compositions for microlithography
AU2001259509A AU2001259509A1 (en) 2000-05-05 2001-05-04 Polymers for photoresist compositions for microlithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20196100P 2000-05-05 2000-05-05
US60/201,961 2000-05-05

Publications (2)

Publication Number Publication Date
WO2001086352A2 WO2001086352A2 (fr) 2001-11-15
WO2001086352A3 true WO2001086352A3 (fr) 2002-03-28

Family

ID=22748003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/014520 WO2001086352A2 (fr) 2000-05-05 2001-05-04 Polymeres destines a des compositions photoresist pour microlithographie

Country Status (4)

Country Link
EP (1) EP1279069A2 (fr)
JP (1) JP2003532932A (fr)
AU (1) AU2001259509A1 (fr)
WO (1) WO2001086352A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830870B2 (en) 2002-05-28 2004-12-14 Arch Speciality Chemicals, Inc. Acetal protected polymers and photoresists compositions thereof

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003186198A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186197A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
US7297811B2 (en) 2003-12-04 2007-11-20 International Business Machines Corporation Precursors to fluoroalkanol-containing olefin monomers and associated methods of synthesis and use
US7193023B2 (en) 2003-12-04 2007-03-20 International Business Machines Corporation Low activation energy photoresists
US7495135B2 (en) 2003-12-04 2009-02-24 International Business Machines Corporation Precursors to fluoroalkanol-containing olefin monomers, and associated methods of synthesis and use
US7820369B2 (en) 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
JP5472217B2 (ja) * 2011-06-29 2014-04-16 信越化学工業株式会社 ２，２−ビス（フルオロアルキル）オキシラン類を用いた光酸発生剤の製造方法
US8968990B2 (en) * 2011-09-15 2015-03-03 Tokyo Ohka Kogyo Co., Ltd. Method of forming resist pattern
EP3375273B1 (fr) 2013-03-14 2019-11-27 Precision Planting LLC Systèmes pour régulation de profondeur de sillon d'instruments agricoles et surveillance du sol
WO2019070617A1 (fr) 2017-10-02 2019-04-11 Precision Planting Llc Systèmes et appareils de surveillance du sol et des semences

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017712A1 (fr) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresines, polymeres et procedes de microlithographie
WO2000025178A2 (fr) * 1998-10-27 2000-05-04 E.I. Du Pont De Nemours And Company Photoresines et procedes de microlithographie
WO2001037047A2 (fr) * 1999-11-17 2001-05-25 E.I. Du Pont De Nemours And Company Photoresists a base de nitrile/fluoroalcool et procedes de microlithographie associes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017712A1 (fr) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresines, polymeres et procedes de microlithographie
WO2000025178A2 (fr) * 1998-10-27 2000-05-04 E.I. Du Pont De Nemours And Company Photoresines et procedes de microlithographie
WO2001037047A2 (fr) * 1999-11-17 2001-05-25 E.I. Du Pont De Nemours And Company Photoresists a base de nitrile/fluoroalcool et procedes de microlithographie associes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830870B2 (en) 2002-05-28 2004-12-14 Arch Speciality Chemicals, Inc. Acetal protected polymers and photoresists compositions thereof

Also Published As

Publication number Publication date
EP1279069A2 (fr) 2003-01-29
AU2001259509A1 (en) 2001-11-20
JP2003532932A (ja) 2003-11-05
WO2001086352A2 (fr) 2001-11-15

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