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WO2004040371A3 - Nouveau copolymere, compositions de photoresist de celui-ci et son systeme bicouche a uv profond - Google Patents

Nouveau copolymere, compositions de photoresist de celui-ci et son systeme bicouche a uv profond Download PDF

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Publication number
WO2004040371A3
WO2004040371A3 PCT/US2003/034832 US0334832W WO2004040371A3 WO 2004040371 A3 WO2004040371 A3 WO 2004040371A3 US 0334832 W US0334832 W US 0334832W WO 2004040371 A3 WO2004040371 A3 WO 2004040371A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist compositions
novel copolymer
photoresist composition
photoimageable
novel copolymers
Prior art date
Application number
PCT/US2003/034832
Other languages
English (en)
Other versions
WO2004040371A2 (fr
Inventor
Binod B De
Sanjay Malik
Stephanie J Dilocker
Ognian N Dimov
Original Assignee
Arch Spec Chem Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arch Spec Chem Inc filed Critical Arch Spec Chem Inc
Priority to EP03809975A priority Critical patent/EP1558654A4/fr
Priority to JP2004548624A priority patent/JP2006504827A/ja
Publication of WO2004040371A2 publication Critical patent/WO2004040371A2/fr
Publication of WO2004040371A3 publication Critical patent/WO2004040371A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F130/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F130/04—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F130/08—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F34/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Silicon Polymers (AREA)

Abstract

L'invention concerne de nouveaux copolymères appropriés à la formation du revêtement photoimageable de couche supérieure d'un système d'UV profond, en particulier, un système de resist bicouche de 193 nanomètres à 248 nanomètres, permettant une photolithographie à haute résolution. L'invention concerne également une composition de photoresist chimiquement amplifié et des fractions d'organosilicium appropriées à une utilisation dans une résine de liaison pour une composition de photoresist résistante à une gravure photoimageable, laquelle composition est appropriée en tant que matière à utiliser dans une photolithographie ArF et KrF faisant appel aux nouveaux copolymères. Le nouveau copolymère de l'invention comprend une première unité de répétition comprenant une ou plusieurs unités représentées par la structure (IA), la structure (IB) ou la structure (IC).
PCT/US2003/034832 2002-10-31 2003-10-31 Nouveau copolymere, compositions de photoresist de celui-ci et son systeme bicouche a uv profond WO2004040371A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03809975A EP1558654A4 (fr) 2002-10-31 2003-10-31 Nouveau copolymere, compositions de photoresist de celui-ci et son systeme bicouche a uv profond
JP2004548624A JP2006504827A (ja) 2002-10-31 2003-10-31 新規なコポリマー、そのフォトレジスト組成物およびその深紫外線二層システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42278102P 2002-10-31 2002-10-31
US60/422,781 2002-10-31

Publications (2)

Publication Number Publication Date
WO2004040371A2 WO2004040371A2 (fr) 2004-05-13
WO2004040371A3 true WO2004040371A3 (fr) 2004-07-15

Family

ID=32230387

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/034832 WO2004040371A2 (fr) 2002-10-31 2003-10-31 Nouveau copolymere, compositions de photoresist de celui-ci et son systeme bicouche a uv profond

Country Status (6)

Country Link
US (1) US6916543B2 (fr)
EP (1) EP1558654A4 (fr)
JP (1) JP2006504827A (fr)
KR (1) KR20050074979A (fr)
TW (1) TW200413417A (fr)
WO (1) WO2004040371A2 (fr)

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JP4433160B2 (ja) * 2003-01-30 2010-03-17 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
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JP4225806B2 (ja) * 2003-03-04 2009-02-18 富士フイルム株式会社 ポジ型レジスト組成物
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JP4718114B2 (ja) * 2003-11-17 2011-07-06 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
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CN101072811A (zh) 2004-12-07 2007-11-14 杂混复合塑料公司 高纯多面体低聚硅倍半氧烷单体的制备方法
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JP5050473B2 (ja) * 2005-09-28 2012-10-17 Ｊｎｃ株式会社 フッ素系重合体および樹脂組成物
TWI405036B (zh) * 2005-09-29 2013-08-11 Jnc Corp 含氟光固性聚合物組成物
KR101280478B1 (ko) * 2005-10-26 2013-07-15 주식회사 동진쎄미켐 감광성 수지 조성물
JP4496434B2 (ja) * 2005-11-24 2010-07-07 信越化学工業株式会社 多官能（メタ）アクリレート化合物、光硬化性樹脂組成物及び物品
JP5114022B2 (ja) 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
US20070196773A1 (en) * 2006-02-22 2007-08-23 Weigel Scott J Top coat for lithography processes
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US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
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US7435537B2 (en) * 2006-06-21 2008-10-14 International Business Machines Corporation Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application
JP4739150B2 (ja) * 2006-08-30 2011-08-03 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法
JP4896755B2 (ja) * 2007-02-01 2012-03-14 東京応化工業株式会社 液晶表示素子用平坦化絶縁膜形成用組成物および液晶表示素子用平坦化絶縁膜の製造方法
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JP5045314B2 (ja) * 2007-08-30 2012-10-10 富士通株式会社 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法
JP2009070722A (ja) * 2007-09-14 2009-04-02 Fujifilm Corp 絶縁膜形成用組成物および電子デバイス
KR101585996B1 (ko) * 2009-04-20 2016-01-18 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 미세 패턴의 형성방법 및 반도체 장치의 제조방법
KR101482997B1 (ko) * 2009-06-03 2015-01-14 한국생산기술연구원 하드마스크용 덴드리머 화합물 및 이를 포함하는 하드마스크 조성물
KR20110059471A (ko) * 2009-11-27 2011-06-02 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성방법 및 반도체 장치의 제조방법
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Also Published As

Publication number Publication date
EP1558654A4 (fr) 2006-04-05
US6916543B2 (en) 2005-07-12
EP1558654A2 (fr) 2005-08-03
WO2004040371A2 (fr) 2004-05-13
KR20050074979A (ko) 2005-07-19
TW200413417A (en) 2004-08-01
US20040137362A1 (en) 2004-07-15
JP2006504827A (ja) 2006-02-09

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