WO1998037255A1 - Film transparent conducteur, cible pour metallisation sous vide et substrat revetu dudit film - Google Patents
Film transparent conducteur, cible pour metallisation sous vide et substrat revetu dudit film Download PDFInfo
- Publication number
- WO1998037255A1 WO1998037255A1 PCT/JP1998/000708 JP9800708W WO9837255A1 WO 1998037255 A1 WO1998037255 A1 WO 1998037255A1 JP 9800708 W JP9800708 W JP 9800708W WO 9837255 A1 WO9837255 A1 WO 9837255A1
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- WIPO (PCT)
- Prior art keywords
- film
- transparent conductive
- conductive film
- resistance
- group
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 238000005477 sputtering target Methods 0.000 title claims abstract description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052738 indium Inorganic materials 0.000 claims abstract description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 21
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- 150000002602 lanthanoids Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052768 actinide Inorganic materials 0.000 claims description 2
- 150000001255 actinides Chemical class 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 238000009965 tatting Methods 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 7
- 238000005299 abrasion Methods 0.000 abstract description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 3
- 239000010408 film Substances 0.000 description 179
- 239000000843 powder Substances 0.000 description 29
- 239000000203 mixture Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 230000001590 oxidative effect Effects 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 239000006104 solid solution Substances 0.000 description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910001195 gallium oxide Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000283984 Rodentia Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Definitions
- the present invention relates to a transparent conductive film, a sputtering target, and a substrate with a transparent conductive film.
- Transparent conductive films have both high visible light transmittance and high conductivity, and are used as transparent electrodes for display devices such as liquid crystal display devices and plasma light-emitting devices, transparent electrodes for solar cells, heat ray reflective films for automotive and architectural glass, and CRT. It is widely used as an antistatic film, or as a transparent heating element for various anti-fog applications such as freezing and refrigeration showcases.
- an ITO (tin-doped indium oxide) film is mainly used as a transparent conductive film because a low-resistance film can be easily obtained.
- ITO films are widely used as electrodes for display elements.
- a low-cost transparent conductive film of zinc oxide and a low-cost transparent transparent conductive film of tin oxide are also known.
- ITO which is a main component of ITO
- Zinc oxide-based transparent conductive films have low chemical resistance to acids and alkalis. Therefore, it is difficult to apply the zinc oxide-based transparent conductive film to industrial products such as display elements.
- the tin oxide-based transparent conductive film has extremely excellent chemical resistance as compared with the ITO film and the zinc oxide-based transparent conductive film.
- Tin oxide is produced by spraying or CVD as an industrial production method, but it is difficult to form a uniform film thickness.
- chlorine and hydrogen chloride were generated during film formation, and there was a problem of environmental pollution due to these exhaust gases (or effluents).
- the tin oxide-based transparent conductive film is useful, it has the various problems described above. Further, since the tin oxide-based transparent conductive film is crystalline, there is a problem that scratch resistance is low. The reason why the scratch resistance is low is considered to be that fine irregularities formed during crystal growth are present on the surface of the film, and these are clogged.
- a sputtering method that can easily obtain a uniform thin film and has low environmental pollution is suitable.
- Sputtering methods can be broadly classified into radio frequency (RF) sputtering methods that use a high-frequency power supply, and direct current (DC) sputtering methods that use a DC power supply.
- the RF sputtering method is excellent in that an electrically insulating material can be used for the target, but a high-frequency power supply is expensive, has a complicated structure, and is not preferable for forming a large-area film. .
- DC sputtering method data one rodents preparative material is limited force in highly conductive material?, Easy to operate because the device structure is the use of a simple DC power source.
- the DC sputtering method is preferable.
- Japanese Patent Application Laid-Open No. 1-97315 proposes a method of forming a tin oxide conductive film by a sputtering method, but describes only an RF sputtering method and does not describe a DC sputtering method. . Also, film resistivity also only such have obtained 8 X 1 0- 3 ⁇ cm or more relatively high-resistance film Les,
- JP-7- 33 50 3 0, ln 2 0 3, Z n O, S N_ ⁇ 2, and G a 2 0 3 1 kind selected Ri by the group consisting of or a transparent conductive consisting more Oxides have been proposed. However, there is no specific description of the composite oxide containing tin oxide.
- Japanese Patent Application Laid-Open No. 4-272612 proposes a gallium-containing ITO film, in which s and indium oxide are the main components, and tin oxide is not the main component.
- the present invention solves the above-mentioned disadvantages of the prior art, and provides a tin oxide-based transparent conductive film having low resistance and high abrasion resistance, a method for producing the same, and a sputtering target for forming the tin oxide-based transparent conductive film.
- the purpose is to provide
- the present invention is a transparent conductive film of tin oxide containing a Gariumu and Lee indium, converting the gully um to G a 2 0 3, by converting the Lee indium to I n 2 0 3, tin S n
- the gas re um containing 0.1 to 3 0 mol% G a 2 0 in terms of And indium is In 2
- FIG. 1 is an X-ray diffraction pattern of a film in Example 2 which is an example of the present invention.
- the content of the gully um is from 1 1 to 5 mole 0/0 G a 2 0 3 in terms of the content ratio of Katsui indium is at I n 2 0 3 in terms of 1 is preferably 1 to 5 mol 0/0.
- Antimony is a S b 2 0 5 terms in tellurium T E_ ⁇ 2 terms, G a 2 0 3 and I n 2 0 3 and S with respect to the total amount of n0 2, 0. 0 1 in total
- the transparent conductive film of the present invention in order to further improve the abrasion resistance, a group consisting of group 3 (including lanthanide and excluding actinide), group 4 and group 5 in the long-period periodic table. It is preferable to contain at least one metal selected from the following (hereinafter, referred to as a Group 3 to 5 metal).
- the Group 3 to 5 metal is preferably contained in the film in the form of an oxide (hereinafter, referred to as Group 3 to 5 metal oxide).
- Group 3 to 5 metal oxide 3-5 group metal oxide, S n0 2 and I n 2 0 3 and G a
- the amount is less than 0.05 mol%, the effect of further improving the scratch resistance is small. On the other hand, if it exceeds 5 mol%, the specific resistance of the film becomes high.
- the content ratio of the Group 3 to 5 metal oxide it is calculated based on an oxide (described later) exemplified as the Group 3 to 5 metal oxide. The same applies to the definition of the content ratio of Group 3 to 5 metal oxides.
- Group 3 includes Sc, Y, and Lanyu noise (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu ).
- Y, La, Ce, Pr, and Nd are relatively inexpensive and have high chemical resistance. preferable.
- Group 4 includes Ti, Zr, and Hf.
- Ti and Zr are preferable because they are relatively inexpensive and have high chemical resistance.
- the oxide of Group 4 metal T i 0 2, Z r 0 2, H f 0 2 and the like.
- Group 5 includes V, Nb, and Ta.
- Nb and Ta are preferred because they are relatively inexpensive and have high chemical resistance.
- Oxides of Group 5 metals V 2 0 5, Nb 2 0 5, T a 2 0 5 and the like.
- the specific resistance of the transparent conductive film of the present invention is preferably 1 ⁇ cm or less from a practical viewpoint.
- resistivity 1 0- 5 ⁇ cm or more Preferably, there is.
- the visible light transmittance of the transparent conductive film of the present invention is preferably 70% or more from a practical viewpoint.
- the present invention also provides a sputter phosphorus Gutage' bets tin oxide containing gallium and indium, converting the gallium G a 2 0 3, by converting the indium I n 2 0, tin S n 0 2 when converted into, based on the total amount of the G a 2 0 3 and I n 2 0 3 and S n 0 2, gallium containing from 0.1 to 3 0 mol% in G a 2 0 3 in terms of, or the final indium provides Supattari Ngutage' you want to, characterized in that it contains 0.1 to 3 0 mol% in I eta 0 3 terms.
- the content ratio of either gallium or indium is less than 0.1 mol% in terms of oxide, the specific resistance of the formed film becomes high, and the film becomes crystalline. Furthermore, had the content of the Zureka often Ri by 3 0 mol% in terms of oxide, since the film obtained resistivity of the film is high is lower resistance, the content of the gully um is G a 2 0 3 conversion is 1 to 1 5 mole 0/0 by calculation, and the content of indium 1 in I n 2 0 3 in terms of
- the target of the present invention preferably contains antimony and Z or tellurium, since a film with lower resistance can be obtained.
- Antimony is a S b 2 ⁇ 5 conversion, tellurium at T e 0 2 terms, the.
- the total amount is preferably in the range of 0.01 to 10 mol. If the content is more than 10 mol%, the resistance of the target and the obtained film tends to increase. In addition, the target density (density) tends to decrease, and the discharge during sputtering tends to be unstable. If the amount is less than 0.01 mol%, the effect of lowering the resistance is small.
- the relative density of the target is preferably about 80% or more, that is, the target density is preferably 5.5 gZc c or more.
- the group 3 to 5 metal is preferably contained in the target in the form of an oxide (that is, a group 3 to 5 metal oxide).
- Group 3 to 5 metal and the Group 3 to 5 metal oxide are the same as described above.
- 3-5 group metal oxide based on the total amount of the S n0 2 and I n 2 0 3 and G a 2 0 3, it is preferable to 0.0 5-5 mole 0 / o containing in total. If it is less than 0.05 mol% or more than 5 mol%, the target density tends to decrease.
- the specific resistance of the sputtering target is preferably 1 ⁇ cm or less.
- Gallium in the target is preferably present in an oxide state or a solid solution state.
- the oxide state tri-state gallium oxide (G a 2 0 3) or oxide Lee indium (I n 2 0 3) and Z or a composite oxide of tin oxide (S n 0 2) Means the state.
- a solid solution state means a state of tin oxide gallium is solid-solved (S n ⁇ ") and Z or oxidation Injiumu which Gariumu is solid-solved (I n 2 0 3).
- gallium large that Part is S n 0 2 or I n 2 0
- the oxide state is defined as I n, 0, (S ⁇ , or G a 0 3 is meant the state of the composite oxide of the state of solid solution or may be) or S n 0 2 and / or G a 2 0 3,.
- a solid solution state, S n 0 2 and Roh or Lee indium which Lee indium is solid-solved is meant G a 2 0 3 was dissolved.
- indium is present in that state in which most of a solid solution to I n 2 0 3 (S n 0 2 or G a 2 0 3 is good even if dissolved Les) state or S n 0 2 of Preferably
- the gallium and the alloy exist in an oxide state or a solid solution state in that the transparent conductive film can be easily produced.
- the object of the present invention is not spoiled.
- the maximum particle size of the crystal grains of the oxide is less 2 0 0 ⁇ m.
- the presence of oxide particles having a maximum particle size of more than 200 m is not preferable because sputtering discharge becomes unstable.
- the average particle size is preferably 0.01 m or more from the viewpoint of handling of the powder and moldability. If the average particle size is more than 50 m, the sinterability is reduced, and it becomes difficult to obtain a dense sintered body. Therefore, the average particle size is preferably 50 m or less.
- the target of the present invention may contain other components to such an extent that the object and effects of the present invention are not impaired, but it is desirable to keep the target as small as possible.
- composition of the film approximately matches the composition of the target. However, the composition of the film may deviate from the target composition depending on the sputtering conditions during film formation.
- the target of the present invention can be produced by a method for producing ceramics in general, such as a normal pressure sintering method and a hot press method.
- normal pressure sintering In the case of normal pressure sintering, firing at a high temperature is necessary. At high temperatures, oxides are decomposed and easily evaporated, and the target is difficult to densify, so it contains oxygen such as air It is preferable to perform sintering in an atmosphere. For example, normal pressure sintering is performed in air at a temperature of 130 to 160.
- sintering can be performed at a relatively low temperature, so that an oxidizing atmosphere (an atmosphere containing an oxidizing gas) and a non-oxidizing atmosphere (an atmosphere containing no oxidizing gas) can be used.
- an oxidizing atmosphere an atmosphere containing an oxidizing gas
- a non-oxidizing atmosphere an atmosphere containing no oxidizing gas
- hot press 7 may be used, but in the case of a hot press, carbon is generally used for the mold material, and it is preferable to perform the treatment in a non-oxidizing atmosphere from the viewpoint of preventing oxidation of the mold material.
- hot press at 800 to 110 ° C in a non-oxidizing atmosphere.
- a target can be produced, for example, as follows.
- G a 2 0 3 powder was prepared I n 2 0 3 powder and S n 0 2 powder, mixing these powders in a predetermined ratio.
- water is used as a dispersant and mixed by a wet ball mill method.
- the powder is dried and then filled in a rubber mold, and is subjected to pressure molding with a cold isostatic press (CIP) at a pressure of 1500 kg Zcm 2 . Then in the air 1
- CIP cold isostatic press
- a target can be produced, for example, as follows. After mixing and drying the raw material powders as in the case of normal pressure sintering, the powder is filled into a carbon hot-press die, and the powder is filled into argon (Ar) 900. It is kept at a temperature of C and a pressure of 300 kgcm 2 for 2 hours and sintered. Thereafter, the same machining and metal bonding as in normal pressure sintering is performed to produce the target.
- the target of the present invention has a high conductivity, so that a large-area film can be formed, and the target can sufficiently cope with the DC sputtering method in which the film forming speed is high, and the RF sputtering can be performed. Any sputtering method such as a sputtering method can be used.
- the transparent conductive film of the present invention preferably has a geometric film thickness (hereinafter simply referred to as a film thickness) in the range of 3 nm to 5 m. If the film thickness exceeds 5, the film formation time becomes longer and the cost increases. When the film thickness is less than 3 nm, the specific resistance increases. In particular, the range of 3 to 300 nm is preferable.
- the present invention also provides a method for producing a transparent conductive film containing tin oxide as a main component on a substrate by a sputtering method, wherein the sputtering target is used as the sputtering target.
- a method for producing a transparent conductive film is provided.
- the oxidizing atmosphere is an atmosphere containing an oxidizing gas.
- the oxidizing gas means an oxygen atom-containing gas such as 0 2 H 2 0 CO C0 2
- Oxidizing gas concentration greatly affects film properties such as film conductivity and light transmittance
- Ar-0 as the sputtering gas.
- System or A r _ C 0 2 system making the transparent low-resistance film, preferably in that easily controlling the composition of the gas.
- 0 2 concentration is preferably 5 2 5 vol%. If it is less than 5% by volume, the film will be colored yellow and the resistance of the film will be high. If the content is more than 25% by volume, the resistance of the film increases.
- C0 2 concentration is preferably 1 0 5 0 vol 0/0. 1 0 vol 0/0 good small and film is colored yellow is, the resistance of the membrane becomes higher. If it exceeds 50% by volume, the resistance of the film increases.
- a colored film or high resistance may be required, and the concentration is not limited to the above.
- any sputtering method such as a DC sputtering method and an RF sputtering method can be used.
- the DC sputtering method having excellent industrial productivity is preferable.
- the transparent conductive film of the present invention can be manufactured as follows. Using a magnetron DC Supattari ring device, using the target described above, 1 a chamber 0 1 0- 4 T
- the power density during sputtering (the value obtained by dividing the input power by the area of the target surface) is preferably 110 W / cm 2 . lWZc m 2 is smaller than the discharge is not stable. If it is higher than 1 OW / cm 2 , the possibility that the target is cracked by the generated heat increases.
- the sputtering pressure is preferably from 10 to 10 Trr. Ten- If it is smaller than 4T orr or higher than 10—orr, the discharge tends to be unstable.
- Examples of a substrate on which a film is formed include glass, ceramics, plastics, and metal.
- the substrate temperature during film formation is not particularly limited, but is preferably 300 ° C. or lower from the viewpoint that an amorphous film can be easily obtained.
- the temperature of the substrate may be about room temperature when no intentional heating is performed, that is, about room temperature.
- the substrate may be post-heated (heat treated).
- the heat treatment is preferably performed at 60 to 400 ° C. in the air. If the temperature is lower than 60 ° C, the effects of lowering the resistance by heat treatment and imparting resistance stability are small. If it is higher than 400 ° C, the resistance will be higher. Also, heat treatment can be performed in a non-oxidizing atmosphere (for example, Ar or nitrogen).
- the temperature at this time is preferably from 60 to 600 ° C. If the temperature is lower than 60 ° C, the effects of lowering the resistance and providing resistance stability by heat treatment are small. If the temperature is higher than 600 ° C, the film is reduced and tends to be colored.
- the film is preferably amorphous. However, even if it is slightly crystallized, the adhesive strength of the crystal grain boundary of the transparent conductive film of the present invention is high, and high scratch resistance can be obtained.
- the transparent conductive film of the present invention is extremely excellent in acid resistance and alkali resistance.
- the present invention provides a substrate with a transparent conductive film, wherein a tin oxide-based transparent conductive film containing gallium and indium is formed on the substrate.
- This substrate with a transparent conductive film can be used as a transparent surface heater or an antistatic article. Also, it can be used for antistatic wafer transport chucks for semiconductor manufacturing.
- the transparent surface heater can also be obtained by directly coating the transparent conductive film of the present invention on a glass or plastic film.
- the thickness is preferably from 10 to 300 nm from the viewpoint of the resistance value.
- Antistatic articles can also be obtained by directly coating the transparent conductive film of the present invention on glass or plastic film.
- the thickness is preferably 3 to 100 nm from the viewpoint of the resistance value.
- the wafer transporting chuck with antistatic for semiconductor production can also be obtained by directly coating the transparent conductive film of the present invention on a ceramics chuck.
- the thickness is preferably from 3 to 300 nm from the viewpoint of the resistance value.
- one or more undercoat films can be provided between the transparent conductive film layer and the substrate for the purpose of adjusting the appearance.
- the transmission / reflection color tone and the visible light reflectance can be adjusted by utilizing the light interference phenomenon and the film absorption phenomenon.
- Oxide, nitride or oxynitride films can be used for undercoat and overcoat.
- gallium oxide and indium oxide act as sintering aids when sintering tin oxide, the main component. At this time, gallium oxide and indium oxide strengthen each other's action. Gallium oxide and indium oxide also serve as additives for imparting conductivity to the target. Also in this case, the gallium oxide and the indium oxide reinforce each other's action and lower the resistance.
- gallium oxide and indium oxide serve as additives for imparting conductivity to the film.
- gallium oxide and indium oxide strengthen each other's action and lower the resistance.
- gallium oxide and zinc oxide work to make the film amorphous by the effect of impurities. It lowers the resistance of the transparent conductive film and the target of the present invention.
- oxides of the elements 3a, 4a and 5a act as sintering aids.
- the transparent conductive film of the present invention has a function of strengthening the bond, it works to enhance the scratch resistance.
- Examples 1 to 26 and Examples 30 to 31 correspond to Examples, and Examples 27 to 29 correspond to Comparative Examples.
- G a 2 0 3 powder was prepared I n 2 0 3 powder and S n0 2 powder, these powders in the proportions indicated in Table 1, were mixed in a dry ball mill.
- the target compositions shown in Table 1 were calculated from the weighed values of each raw material powder.
- the composition of the sintered body was measured by the ICP method (inductively coupled plasma emission spectroscopy), and it was confirmed that the composition matched the composition calculated from the weighed value of the raw material powder. The same applies to the following.
- the average particle size of the powder used was, G a 2 0 3 powder, I n 2 0 3 powder and S n 0 2 powder each 2. 0 ⁇ M, 0. 8 ⁇ M and 1.1 0 ⁇ M met was. These average particle diameters were measured with a microphone mouth track particle size analyzer manufactured by Nikkiso Co., Ltd.
- This mixed powder is filled in a rubber mold, pressed with a CIP device, and then in air.
- Table 1 shows the density and specific resistance of this sintered body. The density was measured by the Archimedes method. The specific resistance is 3 X 3 X
- a 30 mm square sample was cut out and measured by a four-terminal method.
- a target hereinafter referred to as a GIT target.
- GIT film one S n 0 2 based transparent conductive film (hereinafter, referred to as GIT film) formed the film, applied power: 50 0 W, introduced gas: a r- C 0 2 mixed gas (a r + C 0 2 1 00 volume 0/0 as C0 2 3 0 vol 0/0, the total flow rate 5 0 sccm), pressure: 4 X 1 0- 3 T orr , substrate temperature was carried out in a non-heated condition.
- the board has a
- a lime glass substrate (hereinafter simply referred to as a glass substrate) was used.
- the film thickness is approximately
- Example 1 to 15 the optimal values of CO and concentration were found to be 10 to 50% by volume ( It was the introduction ratio of C0 2 to the sum of A r and C0 2 gas). Note that the Example 1 to 1-5 in Table 2, the representative value in the form of the C_ ⁇ 2: shows the experimental results in the case of 3 0% by volume. Table 2 shows the specific resistance and transmittance of the various GIT films obtained.
- the film compositions in Table 2 were measured by the ICP method.
- the composition of the target and the composition of the GIT film almost matched.
- FIG. 1 shows an X-ray diffraction pattern of the GIT film obtained in Example 2.
- a target was prepared in the same manner as in Example 1.
- Table 1 shows the density and specific resistance of this sintered body (target).
- Film formation was performed under the same conditions as in Example 1 using a magnetron DC sputtering apparatus.
- Table 2 shows the composition, specific resistance, and transmittance of the film at this time.
- the film compositions in Table 2 were measured by the ICP method. Comparing the film composition with the target composition, the content of Sb0— and TeO, in the film was decreasing.
- the film was identified using an X-ray diffractometer. All of the films of Examples 16 to 19 had flat X-ray diffraction patterns and were amorphous.
- Table 1 shows the mixing ratio of the powders.
- a target was prepared in the same manner as in Example 1.
- Table 1 shows the density and specific resistance of this sintered body (target).
- Example 2 Under the same conditions as in Example 1, a film was formed using a magnetron DC sputtering apparatus. Table 2 shows the composition, specific resistance, and transmittance of the film at this time.
- Example 27 to 28 The film was identified using an X-ray diffractometer. All of the films of Examples 20 to 26 were amorphous by X-ray diffraction and flat in the turn. (Example 27 to 28)
- G a 2 0 3 powder was prepared I n 2 0 3 powder and S n 0 2 powder, these powders in the proportions indicated in Table 1, were mixed in a dry ball mill.
- Example 1 In the same manner as in Example 1, a target was produced. Table 1 shows the density and specific resistance of this sintered body (target).
- Example 1 and the same conditions (however, the sputtering gas is set to A r - ⁇ 2 mixed gas
- the proportion of oxygen was 3% by volume. This is because the preliminary experiments have shown that the ratio of oxygen that forms a low-resistance and transparent film is 3% by volume.
- Other conditions were the same as in Example 1), and a film was formed using a magnetron DC sputtering apparatus.
- Table 2 shows the composition, specific resistance, and transmittance of the transparent conductive film at this time.
- Table 2 shows the specific resistance and transmittance of the obtained various transparent conductive films.
- the film compositions in Table 2 were measured by the ICP method.
- the composition of the target and the composition of the GIT film almost matched.
- a target was prepared in the same manner as in Example 1.
- Table 1 shows the density and specific resistance of this sintered body (target).
- the target of this composition had high resistance and could not perform DC sputtering. Therefore, film formation was performed using a magnetron RF sputtering apparatus.
- the conditions other than the power supply were the same as in Example 27.
- Table 2 shows the specific resistance and transmittance of the film at this time. The specific resistance was higher than in Examples 1-26.
- the film compositions in Table 2 were measured by the ICP method.
- the composition of the target and the composition of the GIT film almost matched.
- each of the films of Examples 1 to 29 was left in a 5 wt% hydrochloric acid aqueous solution at room temperature for 2 hours. As a result, no erosion of the membrane and no change in resistance were observed for any of the membranes of Examples 1 to 26. A similar test was conducted for a 5 wt% sulfuric acid aqueous solution. No resistance change was observed.
- the resistance of the film of Example 28 was increased by 20% and 10%, respectively, in the hydrochloric acid resistance test and the sulfuric acid resistance test.
- Rate of change in resistance (%) ((resistance after experiment) Z (initial resistance)-1) X 100.
- the films of Examples 1 to 29 were each left in a 5 wt% aqueous sodium hydroxide solution at 80 ° C. for 30 minutes. As a result, no erosion was observed for any of the membranes of Examples 1 to 26.
- the resistance change of each of the films of Examples 1 to 26 was as small as 0 to + 5% or less.
- the film of Example 27 had a 45% increase in resistance.
- the film of Example 28 had a 70% increase in resistance.
- the films of Examples 1 to 29 were each left in a mixed aqueous solution of 2 wt% HF + 2 wt% nitric acid at room temperature for 30 minutes. As a result, no erosion of the membrane and no change in resistance were observed for any of the membranes of Examples 1 to 26.
- the membranes of Examples 27 and 28 all dissolved.
- the films of Examples 1 to 29 were each left for 150 hours in an atmosphere at a temperature of 40 ° C. and a relative humidity of 90%. As a result, the resistance change of each of the films of Examples 1 to 26 was as small as ⁇ 2% or less.
- the film of Example 28 had a 10% increase in resistance in moisture resistance.
- a sand erasing rubber (a type eraser TYPE 48—1005 mm diameter manufactured by Plus Co., Ltd.) was used for each of the films of Examples 1 to 29.
- the test was performed under the following conditions: load: 500 g, speed: 50 mm / min, number of times: 5 reciprocations. Evaluation: A: almost no damage, B: same damage as glass Nikure, C: Slightly damaged compared to glass, D: Severely damaged.
- the transparent conductive films of Examples 1 to 19 were ranked B, and the transparent conductive films of Examples 20 to 26 were ranked A, indicating that they exhibited high scratch resistance.
- the films of Examples 27 and 28 were ranked C.
- the film of Example 29 had a D rank.
- the GIT film obtained in Example 2 was heat-treated in air at 250 ° C. for 30 minutes. As a result, the specific resistance was reduced to 1.8 ⁇ 10 3 ⁇ cm. The visible light transmittance was unchanged at 82%. In addition, the GIT film obtained in Example 2 was set to N. During,
- a GIT film was formed in the same manner as in Example 2 except that the geometric film thickness of the GIT film was set to 150 nm.
- the electrode and the electrode take-out part were printed on the GIT film by a screen printing method, and baked at 300 ° C. After that, a lead wire was soldered to the electrode take-out part.
- a glass substrate having the same dimensions was prepared, and the glass substrate and the glass substrate on which the GIT film and the like had been formed were sealed with a sealant via a spacer to form a double-layer glass.
- the visible light transmittance of the produced double-glazed glass was 80%.
- the color tone was neutral.
- the resistance between the bus bar and the electrode was measured with a lead wire that penetrated the sealant and was taken out, it was 135 ⁇ .
- a voltage of 32 V was applied between the bus bars to conduct a current test, the resistance value and appearance did not change even after 6 weeks, and were constant.
- the double-layer glass functioned well as electrothermal glass.
- a tin oxide-based transparent conductive film having excellent chemical resistance can be obtained.
- the transparent conductive film obtained by the present invention is amorphous, there is no unevenness on the surface, Since it is smooth, it has excellent abrasion resistance and is conductive, so that it can be used as an overcoat of an insulating material to have an effect as a highly durable antistatic film.
- a transparent film can be obtained without heating the substrate, it can be used for an antistatic film having a protective film function such as a plastic film.
- the target of the present invention is conductive and can perform DC sputtering at a high film formation rate.
- the target is dense and can be sputtered by a stable discharge.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69820639T DE69820639T2 (de) | 1997-02-21 | 1998-02-20 | Substrat mit einem durchsichtigen, leitfähigen Film beschichtet ist und Sputtertarget zur Abscheidung des Films |
EP98904403A EP1004687B1 (en) | 1997-02-21 | 1998-02-20 | SUBSTRATE COATED WITH A TRANSPARENT CONDUCTIVE FILM and SPUTTERING TARGET FOR THE DEPOSITION OF SAID FILM |
US09/175,964 US6042752A (en) | 1997-02-21 | 1998-10-21 | Transparent conductive film, sputtering target and transparent conductive film-bonded substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03813397A JP3925977B2 (ja) | 1997-02-21 | 1997-02-21 | 透明導電膜とその製造方法およびスパッタリングターゲット |
JP9/38133 | 1997-02-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/175,964 Continuation-In-Part US6042752A (en) | 1997-02-21 | 1998-10-21 | Transparent conductive film, sputtering target and transparent conductive film-bonded substrate |
Publications (1)
Publication Number | Publication Date |
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WO1998037255A1 true WO1998037255A1 (fr) | 1998-08-27 |
Family
ID=12516947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/000708 WO1998037255A1 (fr) | 1997-02-21 | 1998-02-20 | Film transparent conducteur, cible pour metallisation sous vide et substrat revetu dudit film |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1004687B1 (ja) |
JP (1) | JP3925977B2 (ja) |
DE (1) | DE69820639T2 (ja) |
WO (1) | WO1998037255A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013027391A1 (ja) * | 2011-08-22 | 2013-02-28 | 出光興産株式会社 | In-Ga-Sn系酸化物焼結体 |
CN114592175A (zh) * | 2018-03-30 | 2022-06-07 | Jx金属株式会社 | 溅射靶部件及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004013372A1 (ja) | 2002-08-02 | 2004-02-12 | Idemitsu Kosan Co.,Ltd. | スパッタリングターゲット及び焼結体及びそれらを利用して製造した導電膜、並びに有機el素子及びそれに用いる基板 |
TWI417905B (zh) * | 2004-09-13 | 2013-12-01 | Sumitomo Metal Mining Co | A transparent conductive film and a method for manufacturing the same, and a transparent conductive substrate and a light-emitting device |
JP2006289901A (ja) * | 2005-04-14 | 2006-10-26 | Asahi Glass Co Ltd | 反射防止フィルムおよびディスプレイ装置 |
KR20120120130A (ko) * | 2009-10-15 | 2012-11-01 | 우미코르 | 산화주석 세라믹 스퍼터링 타깃 및 이의 제조 방법 |
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JPS63178414A (ja) * | 1987-01-20 | 1988-07-22 | 三井金属鉱業株式会社 | 透明導電膜および該透明導電膜製造用材料 |
JPH04272612A (ja) * | 1991-02-26 | 1992-09-29 | Kojundo Chem Lab Co Ltd | 透明電極 |
JPH04277408A (ja) * | 1991-03-01 | 1992-10-02 | Kojundo Chem Lab Co Ltd | 透明電極 |
US5473456A (en) * | 1993-10-27 | 1995-12-05 | At&T Corp. | Method for growing transparent conductive gallium-indium-oxide films by sputtering |
JPH07335030A (ja) * | 1994-06-14 | 1995-12-22 | Idemitsu Kosan Co Ltd | 導電性積層体 |
JPH08264022A (ja) * | 1995-03-27 | 1996-10-11 | Gunze Ltd | 透明導電膜 |
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JP2707478B2 (ja) * | 1992-08-24 | 1998-01-28 | 新日本製鐵株式会社 | 高耐食性複層電気めっき鋼板 |
US5407602A (en) * | 1993-10-27 | 1995-04-18 | At&T Corp. | Transparent conductors comprising gallium-indium-oxide |
-
1997
- 1997-02-21 JP JP03813397A patent/JP3925977B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-20 EP EP98904403A patent/EP1004687B1/en not_active Expired - Lifetime
- 1998-02-20 DE DE69820639T patent/DE69820639T2/de not_active Expired - Lifetime
- 1998-02-20 WO PCT/JP1998/000708 patent/WO1998037255A1/ja active IP Right Grant
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JPS63178414A (ja) * | 1987-01-20 | 1988-07-22 | 三井金属鉱業株式会社 | 透明導電膜および該透明導電膜製造用材料 |
JPH04272612A (ja) * | 1991-02-26 | 1992-09-29 | Kojundo Chem Lab Co Ltd | 透明電極 |
JPH04277408A (ja) * | 1991-03-01 | 1992-10-02 | Kojundo Chem Lab Co Ltd | 透明電極 |
US5473456A (en) * | 1993-10-27 | 1995-12-05 | At&T Corp. | Method for growing transparent conductive gallium-indium-oxide films by sputtering |
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EDWARDS D. D., ET AL.: "A NEW TRANSPARENT CONDUCTING OXIDE IN THE GA2O3-IN2O3-SNO2 SYSTEM.", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 70., no. 13., 31 March 1997 (1997-03-31), US, pages 1706 - 1708., XP002912329, ISSN: 0003-6951, DOI: 10.1063/1.118676 * |
See also references of EP1004687A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013027391A1 (ja) * | 2011-08-22 | 2013-02-28 | 出光興産株式会社 | In-Ga-Sn系酸化物焼結体 |
CN114592175A (zh) * | 2018-03-30 | 2022-06-07 | Jx金属株式会社 | 溅射靶部件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1004687B1 (en) | 2003-12-17 |
EP1004687A4 (en) | 2001-05-23 |
DE69820639D1 (de) | 2004-01-29 |
DE69820639T2 (de) | 2004-10-14 |
EP1004687A1 (en) | 2000-05-31 |
JP3925977B2 (ja) | 2007-06-06 |
JP2002012964A (ja) | 2002-01-15 |
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