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WO1998005605A1 - Procede de commande de la profondeur de la gravure dans des pieces de travail frittees - Google Patents

Procede de commande de la profondeur de la gravure dans des pieces de travail frittees Download PDF

Info

Publication number
WO1998005605A1
WO1998005605A1 PCT/GB1997/001941 GB9701941W WO9805605A1 WO 1998005605 A1 WO1998005605 A1 WO 1998005605A1 GB 9701941 W GB9701941 W GB 9701941W WO 9805605 A1 WO9805605 A1 WO 9805605A1
Authority
WO
WIPO (PCT)
Prior art keywords
control
etch
depth
workpieces
sintered
Prior art date
Application number
PCT/GB1997/001941
Other languages
English (en)
Inventor
Jyoti Kiron Bhardwaj
Original Assignee
Surface Technology Systems Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surface Technology Systems Limited filed Critical Surface Technology Systems Limited
Priority to AU35536/97A priority Critical patent/AU3553697A/en
Publication of WO1998005605A1 publication Critical patent/WO1998005605A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B21/00—Head arrangements not specific to the method of recording or reproducing
    • G11B21/16—Supporting the heads; Supporting the sockets for plug-in heads
    • G11B21/20—Supporting the heads; Supporting the sockets for plug-in heads while the head is in operative position but stationary or permitting minor movements to follow irregularities in surface of record carrier
    • G11B21/21—Supporting the heads; Supporting the sockets for plug-in heads while the head is in operative position but stationary or permitting minor movements to follow irregularities in surface of record carrier with provision for maintaining desired spacing of head from record carrier, e.g. fluid-dynamic spacing, slider
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G11B5/3166—Testing or indicating in relation thereto, e.g. before the fabrication is completed
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00422—Magnetic properties

Definitions

  • This invention relates to a method of etching formations in sintered workpieces.
  • the mterferometric signal relating to the etching rate of the photoresist was successfully maintained.
  • the repeatability in etch selectivity between the sintered material and the photoresist was not sufficient to enable the use of photoresist etch rate being the control parameter, particularly, as the resist is highly sensitive to chemical concentration changes in contrast to the sintered materials. It has therefore proved extremely difficult'to control the treatment of a single batch of heads, let alone to establish good conformity between batches.
  • the invention consists in a method of etching formations in sintered workpieces comprising, loading a batch of workpieces having a photoresist layer deposited thereon into an etching chamber together with a control workpiece, etching the workpieces, through the openings in the layer, and the control, monitoring the etch depth on the control and stopping the etch process when the etch depth on the control is the requisite depth.
  • the control is made of one of the sintered components or other (non cross contaminating) material which has an etch rate equivalent to or proportional to that of the sintered material.
  • the requisite depth may be the required depth of the formation.
  • the control may be made of A1 2 0 3 , TiC, SiC, Si0 2 ,Ti0 2 , Si ,Al , AlSi or Ti .
  • Mask materials eg. organic polymer such as photo resist; polyamide etc, could be used. Where the material is transparent at the wavelength of the light used, a backside metallisation layer can be used to allow the inferometry to be used. In this case the control cleaning does not need to be masked as described below. It is preferred that the requisite depth is monitored using a reflectance interferometer.
  • the method is particularly suitable for use for head bars for Read/Write heads, but many other sintered objects can be similarly treated.
  • control workpiece will pass through all the treatment steps with a batch prior to the etching step, e.g. the deposition of the photoresist mask.
  • specially prepared control workpieces could be used and inserted only at the etch stage eg. transparent control workpieces.
  • the mask may be formed in a variety of ways and may include photoresist spin on glasses, polyamides, etc.
  • Figure 1 illustrates a typical thin film head for a Read/Write device
  • Figure 2 shows an enlarged view of one side of the formation during etching
  • Figure 3 schematically illustrates a batch of heads bonded to a carrier with a reflectance interferometer and monitoring the control head.
  • a Read/Write head generally indicated at 10 has a channel 11 etched out of it, which defines the relative distances between the pole tips of the magnetic head 12 and the air bearing surface 13.
  • the base 14 of the channel is illustrated in the enlarged view_ » A and it will be noted that, due to the uneven etch of the component material, the base 14 is substantially rough.
  • a batch 16 of heads 10 is mounted on a carrier tray 17 and includes a control head 18, which is made of a single material which etches at a rate which is proportional to or is identical to the etch rate of the sintered materials of the heads 10.
  • the control may be one of the sintered components or some other suitable material .
  • the depth of etch in the control head 18 is monitored by reflectance interferometer 19 and because the control material is carefully selected, the etch process can be controlled in accordance with the output of that device.
  • the control head 18 may carry a mask corresponding to mask 15 which may etch at the same rate as mask 15. Alternatively if the mask is transparent to the interferometer radiation, it may simply be sufficiently robust to out last the etch. In a still further arrangement, if the control head is transparent at the wavelength of radiation of the interferometer, the control head may have a backside metallisation layer, so that light is reflected from that layer to provide a datum. In that case, at least, the control does not require a photo resist layer.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Magnetic Heads (AREA)

Abstract

Cette invention concerne la commande de la profondeur de la gravure dans des pièces de travail frittées. Un groupe (16) de têtes (10) monté sur un plateau de transport (17) comprend une tête témoin (18), laquelle est réalisée dans un seul matériau pouvant être gravé à une vitesse qui est proportionnelle ou identique à la vitesse de gravure des matériaux frittés des têtes (10). La profondeur de la gravure de la tête témoin est surveillée par un interféromètre à réflectance (19).
PCT/GB1997/001941 1996-08-01 1997-07-17 Procede de commande de la profondeur de la gravure dans des pieces de travail frittees WO1998005605A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU35536/97A AU3553697A (en) 1996-08-01 1997-07-17 A method of etch depth control in sintered workpieces

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9616221.9 1996-08-01
GBGB9616221.9A GB9616221D0 (en) 1996-08-01 1996-08-01 A method of etch depth control in sintered workpieces

Publications (1)

Publication Number Publication Date
WO1998005605A1 true WO1998005605A1 (fr) 1998-02-12

Family

ID=10797888

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1997/001941 WO1998005605A1 (fr) 1996-08-01 1997-07-17 Procede de commande de la profondeur de la gravure dans des pieces de travail frittees

Country Status (3)

Country Link
AU (1) AU3553697A (fr)
GB (1) GB9616221D0 (fr)
WO (1) WO1998005605A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US7153443B2 (en) 2003-03-28 2006-12-26 Texas Instruments Incorporated Microelectromechanical structure and a method for making the same
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
US4435898A (en) * 1982-03-22 1984-03-13 International Business Machines Corporation Method for making a base etched transistor integrated circuit
JPH03196521A (ja) * 1989-12-25 1991-08-28 Nec Kansai Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
US4435898A (en) * 1982-03-22 1984-03-13 International Business Machines Corporation Method for making a base etched transistor integrated circuit
JPH03196521A (ja) * 1989-12-25 1991-08-28 Nec Kansai Ltd 半導体装置の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"SMOOTHING THE SURFACE OF MULTI-PHASE MATERIALS", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 31, no. 11, 1 April 1989 (1989-04-01), pages 215, XP000104821 *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 459 (E - 1136) 21 November 1991 (1991-11-21) *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US7153443B2 (en) 2003-03-28 2006-12-26 Texas Instruments Incorporated Microelectromechanical structure and a method for making the same
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6970281B2 (en) 2003-07-03 2005-11-29 Reflectivity, Inc. Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6985277B2 (en) 2003-07-03 2006-01-10 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

Also Published As

Publication number Publication date
GB9616221D0 (en) 1996-09-11
AU3553697A (en) 1998-02-25

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