WO1998005605A1 - A method of etch depth control in sintered workpieces - Google Patents
A method of etch depth control in sintered workpieces Download PDFInfo
- Publication number
- WO1998005605A1 WO1998005605A1 PCT/GB1997/001941 GB9701941W WO9805605A1 WO 1998005605 A1 WO1998005605 A1 WO 1998005605A1 GB 9701941 W GB9701941 W GB 9701941W WO 9805605 A1 WO9805605 A1 WO 9805605A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- control
- etch
- depth
- workpieces
- sintered
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000005755 formation reaction Methods 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B21/00—Head arrangements not specific to the method of recording or reproducing
- G11B21/16—Supporting the heads; Supporting the sockets for plug-in heads
- G11B21/20—Supporting the heads; Supporting the sockets for plug-in heads while the head is in operative position but stationary or permitting minor movements to follow irregularities in surface of record carrier
- G11B21/21—Supporting the heads; Supporting the sockets for plug-in heads while the head is in operative position but stationary or permitting minor movements to follow irregularities in surface of record carrier with provision for maintaining desired spacing of head from record carrier, e.g. fluid-dynamic spacing, slider
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
- G11B5/3166—Testing or indicating in relation thereto, e.g. before the fabrication is completed
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00422—Magnetic properties
Definitions
- This invention relates to a method of etching formations in sintered workpieces.
- the mterferometric signal relating to the etching rate of the photoresist was successfully maintained.
- the repeatability in etch selectivity between the sintered material and the photoresist was not sufficient to enable the use of photoresist etch rate being the control parameter, particularly, as the resist is highly sensitive to chemical concentration changes in contrast to the sintered materials. It has therefore proved extremely difficult'to control the treatment of a single batch of heads, let alone to establish good conformity between batches.
- the invention consists in a method of etching formations in sintered workpieces comprising, loading a batch of workpieces having a photoresist layer deposited thereon into an etching chamber together with a control workpiece, etching the workpieces, through the openings in the layer, and the control, monitoring the etch depth on the control and stopping the etch process when the etch depth on the control is the requisite depth.
- the control is made of one of the sintered components or other (non cross contaminating) material which has an etch rate equivalent to or proportional to that of the sintered material.
- the requisite depth may be the required depth of the formation.
- the control may be made of A1 2 0 3 , TiC, SiC, Si0 2 ,Ti0 2 , Si ,Al , AlSi or Ti .
- Mask materials eg. organic polymer such as photo resist; polyamide etc, could be used. Where the material is transparent at the wavelength of the light used, a backside metallisation layer can be used to allow the inferometry to be used. In this case the control cleaning does not need to be masked as described below. It is preferred that the requisite depth is monitored using a reflectance interferometer.
- the method is particularly suitable for use for head bars for Read/Write heads, but many other sintered objects can be similarly treated.
- control workpiece will pass through all the treatment steps with a batch prior to the etching step, e.g. the deposition of the photoresist mask.
- specially prepared control workpieces could be used and inserted only at the etch stage eg. transparent control workpieces.
- the mask may be formed in a variety of ways and may include photoresist spin on glasses, polyamides, etc.
- Figure 1 illustrates a typical thin film head for a Read/Write device
- Figure 2 shows an enlarged view of one side of the formation during etching
- Figure 3 schematically illustrates a batch of heads bonded to a carrier with a reflectance interferometer and monitoring the control head.
- a Read/Write head generally indicated at 10 has a channel 11 etched out of it, which defines the relative distances between the pole tips of the magnetic head 12 and the air bearing surface 13.
- the base 14 of the channel is illustrated in the enlarged view_ » A and it will be noted that, due to the uneven etch of the component material, the base 14 is substantially rough.
- a batch 16 of heads 10 is mounted on a carrier tray 17 and includes a control head 18, which is made of a single material which etches at a rate which is proportional to or is identical to the etch rate of the sintered materials of the heads 10.
- the control may be one of the sintered components or some other suitable material .
- the depth of etch in the control head 18 is monitored by reflectance interferometer 19 and because the control material is carefully selected, the etch process can be controlled in accordance with the output of that device.
- the control head 18 may carry a mask corresponding to mask 15 which may etch at the same rate as mask 15. Alternatively if the mask is transparent to the interferometer radiation, it may simply be sufficiently robust to out last the etch. In a still further arrangement, if the control head is transparent at the wavelength of radiation of the interferometer, the control head may have a backside metallisation layer, so that light is reflected from that layer to provide a datum. In that case, at least, the control does not require a photo resist layer.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Magnetic Heads (AREA)
Abstract
This invention relates to etch depth control in sintered workpieces. A batch (16) of heads (10) is mounted on a carrier tray (17) and includes a control head (18), which is made of a single material which etches at a rate which is proportional to or is identical to the etch rate of the sintered materials of the head (10). The depth of etch in the control is monitored by a reflectance interferometer (19).
Description
A Method of Etch Depth Control in Sintered faorkpieces
This invention relates to a method of etching formations in sintered workpieces.
There are many products which are made of sintered materials and large scale formations are formed on them by casting and/or subsequent machining. One example is the etched aerodynamic patterning performed on Read/Write heads for use with hard disk drives and the like. Recently the accuracy of certain features on these heads have had to increase because of the drive towards higher areal densities demands even smaller spacing between the head and the disk (this saving is sometimes referred to as the fly height) . Manufacturers have therefore turned to dry etching techniques, such as are used for semiconductor wafers, (in favour of mechanical grinding, etc.) but a problem has arisen with the control of the etching process. The etched depth must be accurately controlled to prevent fly height (and hence head performance) variations. It is common practice to etch the rows of heads or head bars (in a batch) to a depth less than required, then return the batch after etch depth (rate) confirmation, to complete the etch. This presents a problem in volume production where the throughput becomes critical. One solution would be to accurately measure the etch depth in-situ and hence terminate the etch at the desired etch depth. This would completely remove batch to batch target depth control variations and enhance throughput as well as process yield.
In semiconductor etching, it is normal to monitor the depth of a trench or other formations by shining a laser beam onto the bottom of the trench or formation and detecting the relative reflections from the bottom of the trench and the photoresist masked surface which protects the layer which is being etched. However, for sintered materials there is significant roughness at the bottom of the trench due to the unevenness of the etch rate of the constituent materials. This results sufficient scattering of the light to inhibit an mterferometric signal. Minimising the roughness by matching the etch rates of the primary compounds can improve the reflected signal directionally . However the differential rates cannot be sufficiently matched in all cases without prejudicing other desired etch parameters such as etch rate, mask, selectivity and sidewall signal, etc. Also it is common for the sintered material to contain other additional elements (eg. Al203/TιC can contain Y, Mg, Ca, etc) which can often result in extreme difficulty in maintaining a low surface roughness. In the present investigation a large number of attempts to convert existing equipment have failed. In one experiment the mterferometric signal relating to the etching rate of the photoresist was successfully maintained. However, the repeatability in etch selectivity between the sintered material and the photoresist was not sufficient to enable the use of photoresist etch rate being the control parameter, particularly, as the resist is highly sensitive to chemical concentration changes in contrast to the sintered materials.
It has therefore proved extremely difficult'to control the treatment of a single batch of heads, let alone to establish good conformity between batches.
From one aspect the invention consists in a method of etching formations in sintered workpieces comprising, loading a batch of workpieces having a photoresist layer deposited thereon into an etching chamber together with a control workpiece, etching the workpieces, through the openings in the layer, and the control, monitoring the etch depth on the control and stopping the etch process when the etch depth on the control is the requisite depth.
In a preferred embodiment, the control is made of one of the sintered components or other (non cross contaminating) material which has an etch rate equivalent to or proportional to that of the sintered material. In this case the requisite depth may be the required depth of the formation. For example when etching Al203/TiC the control may be made of A1203 , TiC, SiC, Si02,Ti02, Si ,Al , AlSi or Ti . Mask materials (eg. organic polymer such as photo resist; polyamide etc, could be used. Where the material is transparent at the wavelength of the light used, a backside metallisation layer can be used to allow the inferometry to be used. In this case the control cleaning does not need to be masked as described below. It is preferred that the requisite depth is monitored using a reflectance interferometer.
^As has already been mentioned the method is particularly suitable for use for head bars for Read/Write heads, but
many other sintered objects can be similarly treated.
Conveniently, the control workpiece will pass through all the treatment steps with a batch prior to the etching step, e.g. the deposition of the photoresist mask. However, specially prepared control workpieces could be used and inserted only at the etch stage eg. transparent control workpieces. The mask may be formed in a variety of ways and may include photoresist spin on glasses, polyamides, etc.
Although the invention has been defined above it is to be understood that it includes any inventive combination of the features set out above or in the following description.
The invention may be performed in various ways and a specific embodiment will now be described, with reference to the accompanying drawings in which: Figure 1 illustrates a typical thin film head for a Read/Write device ;
Figure 2 shows an enlarged view of one side of the formation during etching, and
Figure 3 schematically illustrates a batch of heads bonded to a carrier with a reflectance interferometer and monitoring the control head.
As can be seen in Figure 1, a Read/Write head, generally indicated at 10 has a channel 11 etched out of it, which defines the relative distances between the pole tips of the magnetic head 12 and the air bearing surface 13.
The base 14 of the channel is illustrated in the enlarged view_»A and it will be noted that, due to the uneven etch of the component material, the base 14 is substantially rough.
Turning to Figure 2 it will be seen that prior to etching the head 10 has a photoresist mask 15 deposited on it and the etching takes place through openings on the mask as is conventional. In accordance with the method of the invention, a batch 16 of heads 10 is mounted on a carrier tray 17 and includes a control head 18, which is made of a single material which etches at a rate which is proportional to or is identical to the etch rate of the sintered materials of the heads 10. The control may be one of the sintered components or some other suitable material . The depth of etch in the control head 18 is monitored by reflectance interferometer 19 and because the control material is carefully selected, the etch process can be controlled in accordance with the output of that device.
The control head 18 may carry a mask corresponding to mask 15 which may etch at the same rate as mask 15. Alternatively if the mask is transparent to the interferometer radiation, it may simply be sufficiently robust to out last the etch. In a still further arrangement, if the control head is transparent at the wavelength of radiation of the interferometer, the control head may have a backside metallisation layer, so that light is reflected from that layer to provide a datum. In that case, at least, the control does not require a photo resist layer.
Thus, by providing the control in the batch, automatic production is easily facilitated. In contrast, currently, manufacturers regularly stop the etch process and unload the
batches so that the etch depth can be physically measured.
Claims
Claims
1. A method of etching formations in sintered workpieces comprising loading a batch of workpieces a photoresist layer deposited thereon in an etching chamber together with a control workpiece, etching the workpieces, through openings in the layer, and the control, monitoring the etch depth on the control and stopping the etch process when the etch depth on the control is the requisite depth.
2. A method as claimed in claim 1 wherein the control is made of one of the sintered components or other non-cross contaminating material which has an etch rate equivalent to or proportional to that of the sintered material .
3. A method as claimed in claim 2 wherein the workpieces are made of Al203/TiC and the control is made of A1203, TiC, SiC, Si02,Ti02, Si,Al,AlSi, Ti or of photoresist mask material . . A method as claimed in any one of claims 1 to 3 wherein the requisite depth is the required depth of the formation. 5. A method as claimed in any one of the preceding claims wherein the requisite depth is monitored using a reflectance interferometer.
6. A method as claimed in claim 5 wherein the control material is transparent to the interferometer radiation and has a reflectance coating on its bottom face.
7. A method as claimed in claim 5 wherein the control workpiece offers a photoresist mask or layer corresponding
to the workpiece mask.
8. A method as claimed in any one of the preceding claims wherein the workpieces are head bars for read/write heads .
9. A method as claimed in any one of the preceding claims wherein the mask is an organic polymeric material or spin-on-glass .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU35536/97A AU3553697A (en) | 1996-08-01 | 1997-07-17 | A method of etch depth control in sintered workpieces |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9616221.9 | 1996-08-01 | ||
| GBGB9616221.9A GB9616221D0 (en) | 1996-08-01 | 1996-08-01 | A method of etch depth control in sintered workpieces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998005605A1 true WO1998005605A1 (en) | 1998-02-12 |
Family
ID=10797888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1997/001941 WO1998005605A1 (en) | 1996-08-01 | 1997-07-17 | A method of etch depth control in sintered workpieces |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU3553697A (en) |
| GB (1) | GB9616221D0 (en) |
| WO (1) | WO1998005605A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290864B1 (en) | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
| US6949202B1 (en) | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
| US6965468B2 (en) | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| US7041224B2 (en) | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
| US7153443B2 (en) | 2003-03-28 | 2006-12-26 | Texas Instruments Incorporated | Microelectromechanical structure and a method for making the same |
| US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
| US7645704B2 (en) | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367044A (en) * | 1980-12-31 | 1983-01-04 | International Business Machines Corp. | Situ rate and depth monitor for silicon etching |
| US4435898A (en) * | 1982-03-22 | 1984-03-13 | International Business Machines Corporation | Method for making a base etched transistor integrated circuit |
| JPH03196521A (en) * | 1989-12-25 | 1991-08-28 | Nec Kansai Ltd | Manufacture of semiconductor device |
-
1996
- 1996-08-01 GB GBGB9616221.9A patent/GB9616221D0/en active Pending
-
1997
- 1997-07-17 WO PCT/GB1997/001941 patent/WO1998005605A1/en active Application Filing
- 1997-07-17 AU AU35536/97A patent/AU3553697A/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367044A (en) * | 1980-12-31 | 1983-01-04 | International Business Machines Corp. | Situ rate and depth monitor for silicon etching |
| US4435898A (en) * | 1982-03-22 | 1984-03-13 | International Business Machines Corporation | Method for making a base etched transistor integrated circuit |
| JPH03196521A (en) * | 1989-12-25 | 1991-08-28 | Nec Kansai Ltd | Manufacture of semiconductor device |
Non-Patent Citations (2)
| Title |
|---|
| "SMOOTHING THE SURFACE OF MULTI-PHASE MATERIALS", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 31, no. 11, 1 April 1989 (1989-04-01), pages 215, XP000104821 * |
| PATENT ABSTRACTS OF JAPAN vol. 015, no. 459 (E - 1136) 21 November 1991 (1991-11-21) * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290864B1 (en) | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
| US6949202B1 (en) | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
| US7041224B2 (en) | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
| US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
| US7153443B2 (en) | 2003-03-28 | 2006-12-26 | Texas Instruments Incorporated | Microelectromechanical structure and a method for making the same |
| US6965468B2 (en) | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| US6970281B2 (en) | 2003-07-03 | 2005-11-29 | Reflectivity, Inc. | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| US6985277B2 (en) | 2003-07-03 | 2006-01-10 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| US7645704B2 (en) | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9616221D0 (en) | 1996-09-11 |
| AU3553697A (en) | 1998-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11715672B2 (en) | Endpoint detection for chemical mechanical polishing based on spectrometry | |
| US5672091A (en) | Polishing apparatus having endpoint detection device | |
| JP6438288B2 (en) | Apparatus and method for spectrum-based monitoring of chemical mechanical polishing | |
| US7132035B2 (en) | Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes | |
| US7252097B2 (en) | System and method for integrating in-situ metrology within a wafer process | |
| JP5583137B2 (en) | Using optical metrology for feedback and feedforward process control | |
| JP2009505847A (en) | Apparatus and method for spectrum-based monitoring of chemical mechanical polishing | |
| US20040152396A1 (en) | Substrate monitoring during chemical mechanical polishing | |
| JP2003501845A (en) | Optical viewport for endpoint detection of chemical mechanical planarization | |
| WO1998005605A1 (en) | A method of etch depth control in sintered workpieces | |
| US8330072B2 (en) | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology | |
| KR101127776B1 (en) | System and method for integrated multi-use optical alignment | |
| US6752701B1 (en) | Planarization apparatus with grinding and etching devices and holding device for moving workpiece between said devices | |
| US20080273195A1 (en) | System, method and apparatus for in-situ substrate inspection | |
| US5402001A (en) | Method of checking for foreign matter on a substrate with light of maximum reflectivity for that substrate | |
| US6183594B1 (en) | Method and system for detecting the end-point in etching processes | |
| US20020118365A1 (en) | Integrated wafer cassette metrology assembly | |
| US7444739B2 (en) | Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process | |
| JP3390889B2 (en) | Manufacturing method of optical aperture | |
| US20030181136A1 (en) | CMP pad platen with viewport | |
| JP2001035112A (en) | Magnetic head slider | |
| JPH05259127A (en) | Method for etching monitoring in plasma etching | |
| JP2003177218A (en) | Monitor for dry etching | |
| JPH06104215A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW AM AZ BY KG KZ MD RU TJ TM |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH KE LS MW SD SZ UG ZW AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| NENP | Non-entry into the national phase |
Ref country code: JP Ref document number: 98507696 Format of ref document f/p: F |
|
| NENP | Non-entry into the national phase |
Ref country code: CA |
|
| 122 | Ep: pct application non-entry in european phase |