WO1997011482A3 - Removal of halogens and photoresist from wafers - Google Patents
Removal of halogens and photoresist from wafers Download PDFInfo
- Publication number
- WO1997011482A3 WO1997011482A3 PCT/US1996/014054 US9614054W WO9711482A3 WO 1997011482 A3 WO1997011482 A3 WO 1997011482A3 US 9614054 W US9614054 W US 9614054W WO 9711482 A3 WO9711482 A3 WO 9711482A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- plasma
- halogen
- removal
- photoresist material
- Prior art date
Links
- 150000002367 halogens Chemical class 0.000 title abstract 6
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 5
- 229910052736 halogen Inorganic materials 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000000470 constituent Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Method and apparatus for removal of remaining photoresist material and halogen residues (9) after etching from a polysilicon or metallized wafer (15, 35, 55). Exposed portions of the wafer substrate (8), not covered by photoresist material, are etched by exposing the wafer to a first, halogen-containing plasma (PS1), such as HBr or CmHnBr2m+2-n' for a first selected time interval. The wafer is exposed to a second plasma (PS2), containing H2O as the primary constituent, for a selected second time interval. Optionally, this second plasma may also contain O2, H2, OH and/or H2O2 as another constituent. Hydrogen radicals and other radicals interact with the remaining photoresist material and with any free halogen and halogen-containing molecules on the wafer to produce reaction products that are removed from the wafer. Each plasma (22, 44, 62, 64) is maintained as an approximately planar body by imposing a time-varying magnetic field and, optionally, a time-varying electrical field on the plasma in directions approximately perpendicular to an exposed surface of the wafer. The processes of etching and of removal of photoresist and halogen residues may be carried out in two separate chambers (11, 31) or in a single chamber (51), with the wafer being maintained in different temperature ranges for the two processes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52429695A | 1995-09-05 | 1995-09-05 | |
US524,296 | 1995-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997011482A2 WO1997011482A2 (en) | 1997-03-27 |
WO1997011482A3 true WO1997011482A3 (en) | 1997-05-15 |
Family
ID=24088608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/014054 WO1997011482A2 (en) | 1995-09-05 | 1996-09-03 | Removal of halogens and photoresist from wafers |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO1997011482A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US9572526B2 (en) | 2009-05-13 | 2017-02-21 | Sio2 Medical Products, Inc. | Apparatus and method for transporting a vessel to and from a PECVD processing station |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6548230B1 (en) * | 1998-09-18 | 2003-04-15 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for in-situ removal of photoresist and sidewall polymer |
US6368517B1 (en) * | 1999-02-17 | 2002-04-09 | Applied Materials, Inc. | Method for preventing corrosion of a dielectric material |
US6734120B1 (en) * | 1999-02-19 | 2004-05-11 | Axcelis Technologies, Inc. | Method of photoresist ash residue removal |
US6852636B1 (en) | 1999-12-27 | 2005-02-08 | Lam Research Corporation | Insitu post etch process to remove remaining photoresist and residual sidewall passivation |
US20070032081A1 (en) | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US7479457B2 (en) | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
JP6509734B2 (en) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | Film inspection method |
US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
US9662450B2 (en) | 2013-03-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
US10504746B2 (en) | 2016-04-12 | 2019-12-10 | Applied Materials, Inc. | HKMG integration |
US10903065B2 (en) * | 2017-05-12 | 2021-01-26 | Lam Research Corporation | Halogen removal module and associated systems and methods |
CN114823297B (en) * | 2022-04-19 | 2023-01-31 | 度亘激光技术(苏州)有限公司 | Photoresist removing process and semiconductor manufacturing process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4222839A (en) * | 1978-09-21 | 1980-09-16 | Motorola, Inc. | Workpiece holder and method for plasma reactor apparatus |
US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
US5016332A (en) * | 1990-04-13 | 1991-05-21 | Branson International Plasma Corporation | Plasma reactor and process with wafer temperature control |
US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
-
1996
- 1996-09-03 WO PCT/US1996/014054 patent/WO1997011482A2/en active Search and Examination
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
US4222839A (en) * | 1978-09-21 | 1980-09-16 | Motorola, Inc. | Workpiece holder and method for plasma reactor apparatus |
US5016332A (en) * | 1990-04-13 | 1991-05-21 | Branson International Plasma Corporation | Plasma reactor and process with wafer temperature control |
US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9572526B2 (en) | 2009-05-13 | 2017-02-21 | Sio2 Medical Products, Inc. | Apparatus and method for transporting a vessel to and from a PECVD processing station |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
Also Published As
Publication number | Publication date |
---|---|
WO1997011482A2 (en) | 1997-03-27 |
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