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WO1997011482A2 - Elimination d'halogenes et de vernis photosensible de tranches - Google Patents

Elimination d'halogenes et de vernis photosensible de tranches Download PDF

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Publication number
WO1997011482A2
WO1997011482A2 PCT/US1996/014054 US9614054W WO9711482A2 WO 1997011482 A2 WO1997011482 A2 WO 1997011482A2 US 9614054 W US9614054 W US 9614054W WO 9711482 A2 WO9711482 A2 WO 9711482A2
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WO
WIPO (PCT)
Prior art keywords
wafer
time interval
housing
plasma
approximately
Prior art date
Application number
PCT/US1996/014054
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English (en)
Other versions
WO1997011482A3 (fr
Inventor
David Heine
Wilbur G. Catabay
Original Assignee
Lsi Logic Corporation
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Filing date
Publication date
Application filed by Lsi Logic Corporation filed Critical Lsi Logic Corporation
Publication of WO1997011482A2 publication Critical patent/WO1997011482A2/fr
Publication of WO1997011482A3 publication Critical patent/WO1997011482A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Definitions

  • This invention relates to semiconductor processing, and more particularly to removal of residues of photoresist and halogen molecules from a metal or polysilicon surface after photoresist stripping.
  • Photoresist Masking of a surface on a semiconductor wafer with photoresist is commonly performed to define traces or lines on the surface for subsequent formation or current traces and components. After formation of these traces and/or components, the remaining photoresist material is often removed by exposure to a plasma or to a solution of H2O2 and sulfuric acid that, ideally, will not significantly etch or otherwise remove the current traces or components or the underlying substrate.
  • Starting materials used for formation of this plasma can include O2, CF4, H2O and other gaseous compounds that react with and remove the photoresist material without seriously degrading other exposed substances on the wafer.
  • a plasma that uses a mixture of O2 and CF4 will remove the photoresist material at practical rates at relatively low temperatures, and the fluorine atoms and ions in the plasma may partially displace any chlorine present in the photoresist material to thereby reduce the possibility of corrosion on metal surfaces.
  • an O2 + CF4 plasma will also significantly etch an underlying Si-containing substrate materials such as polysilicon, Si ⁇ 2 or SiN.
  • Another concern is corrosion of a wafer's metal surfaces, for example, an Al alloy, by chlorine-containing compounds such as CI2 and
  • the activation energy for H extraction is about 0.52 electron volts equivalent (“ev") where a pure O2 plasma is used and is about 0.39 ev where an O2 + H2O plasma or an O2 + H2 plasma is used for photoresist stripping.
  • the relative concentration of O atoms in the plasma increases monotonically to about 1.0 if 1-10 percent of H2O is added to the plasma, and the relative concentration of O atoms decreases monotonically for further increases in the relative amount of H2O added to the plasma.
  • NH3 plasma is first flowed through a reaction chamber containing the wafer.
  • a second plasma containing at least 90 percent O2 and at most 10 percent NH3, is then flowed through the chamber for 30-300 sec to complete the photoresist removal process. The 24-hour test was applied, and no remaining photoresist material or corrosion was found on the wafers tested.
  • a method for photoresist removal from a metal surface on a semiconductor wafer that removes or inactivates chlorine residues is disclosed by Rhoades in U.S. Patent No. 5,221,424.
  • a first stripping step uses a plasma containing O2, C m H n F2 m +2-n (m01; n00) or O2 + N2, with a power level of 500-5,000 Watts for an exposure time of 10 - 20 sec.
  • the 24-hour test was applied, and no chlorine residues were observed on the metal surface(s) from which the photoresist was removed. The inventor does not indicate if all fluorine residues were also removed by this method.
  • Steam, or steam and water in the form of a mist, maintained at a temperature T > 100 °C is directed at the photoresist material and metallized wafer surface, which are spun at rates of 50 - 1 ,000 ⁇ m, then at 2,000 - 5,000 rpm. No times are given for application of the steam/water to the photoresist material.
  • 5,306,672 discloses a method for forming a gate oxide film, using treatment of the substrate with an HF solution as part of the process, and subsequent removal of fluorine residues.
  • the substrate is treated with hydrofluoric acid, then with HF gas, then with high purity H2 gas, maintained at a temperature T 0 200 °C, to remove any residues of fluorine that remain on the substrate.
  • a process for simultaneous removal of photoresist and polysilicon etch residues from an IC structure is disclosed by Hills et al in U.S. Patent No. 5,382,316.
  • a polysilicon substrate, with photoresist material applied and maintained at a temperature T 100 - 400 °C, is exposed to a plasma containing (1) O2 and/or water vapor and (2) a fluorine-containing etchant gas for a time interval of 30 - 300 sec. This simultaneously removes the (remaining) photoresist material and etch residues such as SiBr x , SiCl y and silicon oxides.
  • Ha et al disclose formation of a photoresist pattern on an Al metal layer by etching with plasma containing Cl. Residual Cl is then eliminated using an oxygen plasma containing an alkyl ketone or alkyl ether to suppress subsequent corrosion of the wafer. Other workers have focused on production and maintenance of a plasma with adequate electron-ion energy transfer in a low pressure environment. J.B.
  • Microwaves have been used with particular uniform magnetic field configurations to create regions of electron cyclotron resonance with locally increased ion density regions.
  • TCP transformer coupled plasma
  • a plasma reaction chamber is provided with a dielectric window of quartz, AI2O3 or other suitable non-absorbing material on one wall, and a planar spiral coil is located outside the chamber adjacent to this window.
  • a low pressure plasma moving approximately in a collection of planes parallel to the plane of the window, is produced for (preferably anisotropic) etching of small structures in the wafer.
  • the electrical field produced by the wafer support and the magnetic field produced by the planar coil have no particular frequency or phase relationship to each other.
  • 5,277,751 provides further improvements in the TCP apparatus that allow production of an approximately uniform magnetic field over a region up to 30 cm in diameter and allow operation at pressures as low as 0.1 Pascal.
  • Chen et al, in U.S. Patent Nos. 5,226,967 and 5,368,710 disclose an improvement in the TCP apparatus in which the dielectric window thickness is greater in a central portion of the window than near the window edges, to decrease the induced electrical field within the reaction chamber near this central portion.
  • the invention provides a method for removal of halogen and photoresist residues from a polySi or metallized wafer during photoresist stripping, using an H2O plasma.
  • the exposure time for the remaining photoresist material can vary from 30 - 300 sec, and the power applied to create the plasma to remove this material can vary from 1 - 500 Watts, depending in part upon the size of the reaction chamber.
  • This photoresist/halogen residue removal process is performed in a TCP reaction chamber embodiment.
  • the etching process and the photoresist/halogen residue removal process are carried out in the same chamber, and the substantially different temperature requirements for each process are met by special wafer temperature control methods.
  • Figure 1 is a schematic side view of a portion of the substrate after the etching process is completed.
  • Figures 2 and 5 are cross-sectional side views of apparatus suitable for practising the invention in two embodiments.
  • Figure 3 is a perspective view of the Figure 2 apparatus embodiment.
  • Figure 4 is a graphical view of variation of ideal wafer temperature with time for the removal of substrate (etching) and for the removal of photoresist and halogen residues.
  • Figure 6 is a cross-sectional side view of wafer support/chuck apparatus suitable for use with the reaction chamber shown in Figure 5.
  • Figures 7 and 8 are flow charts of processes for photoresist stripping and photoresist/halogen residue removal according to the invention. Detailed Description of the Invention
  • the process of this invention may be utilized in fabrication of an integrated circuit structure or any other structure where bromine or other halogen residues are likely to remain on the structure after initial processing.
  • the structure is a semiconductor wafer that has undergone photoresist deposit, radiation patterning and removal of selected portions of the photoresist material. Exposed substrate is etched, and the remaining photoresist material must be removed from the wafer, positioned in a plasma reaction chamber.
  • Figure 1 schematically illustrates, in side view, portions of the substrate 8 and photoresist material 9 that remain after etching, before removal of the remaining photoresist material and any halogen-containing residues.
  • FIG 2 is a schematic side view of a plasma reaction chamber 10, which includes a closed housing 11 with a dielectric window 13 located on one wall thereof and which contains a semiconductor wafer 15 supported by a wafer support 17 within this chamber.
  • the dielectric window material is substantially transparent to electromagnetic radiation with a frequency f j Q m e range 0.1 - 100 MHz.
  • the dielectric window 13 is preferably heated by a heater 20 to remove most or all of the plasma and/or reaction by-products that would otherwise deposit or otherwise settle on this window.
  • An approximately planar, current-carrying coil 19, attached to an rf current source 21, is located outside the chamber 10, adjacent to and approximately parallel to the plane of the dielectric window 13. Circulation of a current in the planar coil 19 produces a magnetic field vector B p ⁇ (t) approximately normal to the plane of the coil and an associated electrical field E p j (t).
  • the plasma gas PSI used for the substrate removal process in Figure 2 may contain other hydrated halogen molecules, such as HF, HCl, HI, C m H n F2 m+ 2- n .
  • the wafer support 17 may be a standard wafer chuck or may be an electrostatic or electrodynamic chuck to which a constant or time-varying electrical potential is applied.
  • V s j (t) may be chosen independently or may be approximately equal to each other.
  • the electromagnetic field produced by the planar coil 19 in the gap between the window 13 and the wafer 15 produce a plasma 22 and help to confine most of this plasma to an approximately planar region that is adjacent to and approximately parallel to one or more of the exposed surfaces of the wafer 15.
  • the plasma 22 is at least partially decomposed into H radicals, Br radicals and HBr ions, and these plasma products react with the exposed substrate material. After these reactions occur, the plasma gas 22 and the reaction products are removed from the chamber at a gas exit port 25 that is controlled by an exit port valve 25V.
  • a relatively inert purge gas such as N2 , He, Ne or Ar
  • a purge gas source or reservoir 29 that is controlled by a purge gas valve 29V.
  • the purge gas then exits from the chamber 10 through the exit port 25, carrying away most or all of the residual gases from etching in the reaction chamber 10.
  • the wafer 15 is then moved to a second reaction chamber 30, which is also shown in Figure 1 and is similar to the first reaction chamber 10, for removal of the residual halogens and remaining photoresist material.
  • the second reaction chamber 30 includes a housing 31, a dielectric window 33 (preferably heated) and a wafer support 37 for a wafer 35.
  • a planar, current-carrying coil 39 located outside the housing and adjacent to the dielectric window 33, is fed by an rf current source 41 and produces an magnetic field vector B p 2(t) directed approximately normal to the plane of the coil and an associated electric field E p 2(t) in the region between the dielectric window 33 and the wafer 35, where a plasma will be formed.
  • the wafer support 37 is a standard wafer chuck or an electrostatic chuck.
  • no applied electrical potential analogous to V s j (t) in Eq. (2) is applied during removal of the remaining photoresist material and halogen residues in the reaction chamber 30.
  • the plasma source gas PS2 contains H2O and, optionally, contains O2 and/or H2 and/or OH and/or H2O2 as well.
  • the plasma 44 contains some H radicals, H2 ions, O radicals, O2 ions and/or OH radicals.
  • Figure 3 is a perspective view showing several of the components of the reaction chamber 10, preferably a LAM TCP chamber, and the reaction chamber 30, preferably a LAM DSQ chamber, that appear in Figure 2.
  • Two separate reaction chambers 10 and 30 can be used for removal of exposed substrate and removal of remaining photoresist material and residual halogens.
  • the second reaction chamber 30 in Figure 2 must be provided with additional wafer heating or wafer temperature control means for maintaining the wafer temperature at the higher temperatures during the second removal process.
  • An etching molecule such as HCl has a higher vapor pressure than an etching molecule such as
  • a single reaction chamber 50 shown in Figure 5 is used for substrate etching on a wafer 55, purged with a purge gas, used for photoresist/halogen residue removal, and purged with another purge gas.
  • the electrical currents I p 3(t) and I p 4(t) produced in a planar coil 59 are independently selected for the two processes; and an electrical potential fields V s 3(t) is produced in an electrode that is optionally part of a wafer support 57 and used for the etching process.
  • the reaction chamber 50 in Figure 5 includes a closed housing 51 with a dielectric window 53 (preferably heated by a heater 60) on one wall.
  • a wafer 55 is positioned inside the chamber facing the dielectric window and supported by a grooved or channeled wafer support 57.
  • the wafer support 57 has a plurality of grooves 57G and/or channels 57C formed therein, through which a temperature conditioning ("TC") gas (in the grooves 57G and channels 57C) or liquid (in the channels 57C) is circulated to maintain the wafer temperature within its preferred ranges for each of the etching process and the photoresist/halogen residue removal process.
  • TC temperature conditioning
  • An approximately planar, current-carrying coil 59 is located outside the chamber housing 51, adjacent to and with its plane approximately parallel to, a plane of the dielectric window 53.
  • the frequencies CO3 0 anc * ⁇ 3 1 ma y chosen independently or may be approximately equal to each other.
  • a first plasma gas PS 1 from a first plasma gas source or reservoir 63 is admitted to the interior of the chamber 50 through a first plasma source valve 63V, and a first plasma 62 is formed adjacent to one or more exposed surfaces of the wafer 55.
  • a first plasma 62 is formed adjacent to one or more exposed surfaces of the wafer 55.
  • selected portions of the wafer 55 are covered with photoresist material that was not removed in the initial patterning.
  • Exposure of the wafer 55 (selectively covered with photoresist material) to the first plasma gas PS 1 removes selected portions of the exposed substrate, through etching. During this etching process, the wafer 55 is maintained in a first preferred temperature range
  • the grooved or channeled wafer support 57 may be replaced by a more conventional solid wafer support, such as 17 or 37 in Figure 2, and the wafer 55 may be heated to the appropriate temperature range by two or more radiant heating units 76 and 78 that are positioned adjacent to and are directed at the wafer in the etch process and/or in the photoresist/halogen residue removal process, as indicated in Figure 5.
  • the radiant heating units 76 and 78 are isolated from the plasma 62 (or 64) in the reaction chamber 50 , as shown in Figure 5, and are positioned to irradiate the wafer 55 through heated dielectric windows
  • the radiant heating units are supplied with power from a radiant heat energy source 80.
  • the first plasma gas PS I, selected portions of the substrate material and etch reaction products exit from the reaction chamber 50 through a gas exit port 65 and associated exit port valve 65V, located in a side wall of the housing 51 , or through a gas exit port 66 and associated exit port valve 66V, located in a bottom wall of the housing 51.
  • a purge gas such as N2 , He, Ne or Ar, is optionally introduced into the chamber 50 from a purge gas source 69 and associated purge gas valve 69V and allowed to exit through the gas exit port 65 and/or through the gas exit port 66, to carry away some or all of the etched substrate material and etch reaction products.
  • a second plasma gas PS2 from a second plasma gas source or reservoir 67 is admitted to the reaction chamber 50 through a second plasma source valve 67V, and a second plasma 64 is formed adjacent to one or more of the exposed surfaces of the wafer 55.
  • the etched wafer 55 partly covered with photoresist material, resembles the wafer profile shown in Figure 1 and may have halogen residues on the exposed wafer surfaces.
  • the wafer is maintained in a second preferred temperature range T ⁇ T2 by a second TC fluid from a second TC fluid source 75 that flows through the grooves 57G (gas only) or channels 57C (liquid or gas) in the wafer support 57 to the fluid reservoir 73.
  • circulation of the second TC fluid within the wafer support 57 can be replaced or supplemented by heating from the radiant heating units 76 and 78, to maintain the wafer temperature in the second preferred temperature range T « T2.
  • the frequencies CD3 Q and CO4 may be chosen independently or may be approximately equal to each other.
  • the remaining photoresist material and halogen residues are removed from the surfaces of the wafer 55 by the second plasma 64.
  • This second plasma gas PS2 is preferably H2O and may also contain H2, O2, OH and/or H2O2. Reaction of the second plasma 64 with the residues on the wafer 55 removes the remaining photoresist material and halogen residues from the wafer surfaces.
  • the second plasma gas, remaining photoresist material, halogen residues and reaction products exit from the reaction chamber 50 through the exit port 65 and/or through the exit port 66.
  • the reaction chamber is then purged with a purge gas, such as N2 , He, Ne or Ar, from the purge gas source 69.
  • FIG 6 illustrates in more detail a wafer support 57 that can be used as part of the invention.
  • the wafer support 57 includes a relatively thin upper wafer support block 57U that optionally contains a plurality of fluid-carrying grooves (interconnected or otherwise) 57G.
  • the wafer support 57 also includes a lower support block 57L that optionally contains a plurality of interconnected fluid-carrying channels 57C.
  • a TC gas optionally flows under some pressure from a first TC gas source 71 through the fluid flow grooves 57G to a fluid reservoir 73.
  • a TC fluid optionally flows under some pressure from a first TC gas source 71 through the fluid flow grooves 57G to a fluid reservoir 73.
  • the TC gas circulated in the fluid flow grooves 57G is preferably a high specific heat capacity gas, such as H2O gas, He, Ne or Ar, maintained at a relatively low temperature, such as T ⁇ 70 °C.
  • the upper wafer support block 57U is spaced apart from the lower wafer support block 57L by thermally insulating spacers 57S that define a separation space 57V between the upper wafer support block and the lower wafer support block.
  • the upper support block 57U is preferably a thin block of high thermal conductivity material of relatively low thermal mass.
  • the lower support block 57L is preferably a block of high thermal conductivity material of relatively high thermal mass.
  • the relatively low thermal mass of the thin upper support block 57U allows this block to be heated or cooled to a target temperature relatively quickly.
  • the separation space 57V can be alternatingly evacuated or filled with an inert, high thermal conductivity second TC fluid, such as He, Ne or Ar, from a second TC fluid source 74.
  • FIG. 7 illustrates the processes of etching and removal of the remaining photoresist material and halogen residues, using the double chamber apparatus shown in Figure 2.
  • An etchant or substrate removal gas is admitted to a first reaction chamber, in step 81 , and an etching plasma is formed using a planar, current-carrying coil, in step 83.
  • the planar coil described above is used to confine most of the etching plasma approximately to a plane adjacent to an exposed wafer surface. The etching plasma remains within the reaction chamber long enough so that the exposed substrate is exposed to and reacts with this plasma, to remove selected portions of the exposed substrate.
  • step 87 the etching reaction products are removed from the reaction chamber and the etching plasma is extinguished.
  • step 89 the reaction chamber is flushed with an inert gas, such as N2 , He, Ne, Ar or another suitable gas, to remove most or all of the etching reaction products produced by plasma reactions with the exposed substrate that has been removed.
  • an inert gas such as N2 , He, Ne, Ar or another suitable gas
  • photoresist material and residues of the halogen-containing molecules used for etching remain on the wafer surfaces.
  • step 91 a photoresist/halogen residue removal gas containing H2O and, optionally, O2 and/or H2 and/or
  • H2O plasma is formed and positioned in step 93, using another planar, current- carrying coil to maintain the plasma approximately in a plane, for removal of the remaining photoresist and halogen residues contained on the wafer surfaces.
  • the wafer is then exposed to the H2O plasma, in step 95.
  • This plasma contains a modest fraction of radicals and/or ions of H, H2, O, O2 and/or OH that react with the remaining photoresist material and with residual halogen-containing molecules, such as Br or SiBr, on the exposed surfaces of the wafer to form HBr and other bromine-containing molecules, by reactions such as that set forth in Eq. (4) above.
  • the second reaction chamber is optionally flushed with an inert gas, such as N2 , He, Ne or Ar, in step 99, to remove any remaining gas molecules, especially halogen-containing molecules.
  • an inert gas such as N2 , He, Ne or Ar
  • the wafer can then be moved to its next processing station.
  • Figure 8 illustrates the etching process and photoresist/halogen residue removal processes using the single reaction chamber apparatus shown in Figure 5.
  • An etching gas including halogen-containing molecules, such as HF, HCl, HBr or HI and/or a halogenated hydrocarbon such as C n H m Br2 n +2- ⁇ r ' 1S admitted to a reaction chamber, in step 101.
  • An etching plasma is formed using a planar, current-carrying coil, in step 103.
  • the etching plasma remains within the reaction chamber long enough so that selected portions of the exposed substrate are exposed to and react with this plasma, and these selected portions of the exposed substrate material are removed.
  • the etching reaction products are removed from the reaction chamber and the etching plasma is extinguished.
  • the reaction chamber is flushed with an inert gas, such as N2 , He, Ne, Ar or another suitable gas, to remove most or all of the etching reaction products produced by this plasma.
  • the wafer remains in the (single) reaction chamber.
  • a photoresist/halogen residue removal gas containing H2O and, optionally, O2 and/or H2 and or OH and/or H2O2 is admitted to the (same) reaction chamber.
  • An H2O plasma is formed and positioned in step 1 13, using another planar, current-carrying coil to maintain the plasma approximately in a plane, for removal of the remaining photoresist material and residual halogen-containing molecules.
  • the wafer surface at this point contains some photoresist material and residues of the halogen- containing molecules.
  • the wafer is then exposed to the H2O plasma, in step 1 15.
  • This plasma optionally contains a modest fraction of radicals and/or ions of H, H2, O, O2 and/or OH that react with the remaining photoresist material and with the residual halogen-containing molecules, such as Br or SiBr, on the surfaces of the wafer to form HBr, BrOH and other bromine-containing molecules, by reactions such as that set forth in
  • the reaction chamber is again optionally flushed with an inert gas, such as N2 , He, Ne or Ar, in step 119, to remove any remaining gases.
  • an inert gas such as N2 , He, Ne or Ar
  • the wafer can then be moved to its next processing station.
  • the processes described above can also be used to remove residues containing fluorine and/or chlorine and/or bromine and/or iodine molecules from the wafer.
  • the exposed wafer material may be polysilicon.
  • the exposed wafer material may be metallized with a metal or metal alloy, such as Al, where a presence of residue of a halogen such as chlorine can lead to corrosion of the exposed metal.

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Abstract

L'invention concerne un procédé et un appareil pour éliminer les traces résiduelles (9) de vernis photosensible et d'halogènes après l'attaque d'une tranche de polysilicium ou d'une tranche métallisée (15, 35, 55). Les portions exposées de la tranche (8) non couvertes par le vernis photosensible sont soumises à une attaque par un premier plasma contenant un halogène, tel que HBr ou CmHnBr2m+2-n' pendant une première durée déterminée. La tranche est ensuite exposée à un second plasma contenant du H2O comme constituant primaire, pendant une seconde durée déterminée. Ce second plasma peut également contenir O2, H2, OH et/ou H2O2 comme autres constituants. Les radicaux hydrogène et les autres radicaux réagissent avec le vernis photosensible résiduel et avec tout halogène libre ou tout composé halogéné résiduel sur la tranche, avec formation de produits qui sont éliminés de la tranche. Chaque plasma (22, 44, 62, 64) est maintenu sous la forme d'un corps approximativement plan, en lui imposant un champ magnétique variable dans le temps et éventuellement un champ électrique variable dans le temps, dans des directions approximativement perpendiculaires à la surface traitée de la tranche. Le procédé d'attaque et d'élimination des résidus halogénés et de résidus de vernis photosensible peut s'effectuer dans deux chambres séparées (11, 31) ou dans une chambre unique (51). La tranche est à des températures qui sont différentes dans les deux opérations.
PCT/US1996/014054 1995-09-05 1996-09-03 Elimination d'halogenes et de vernis photosensible de tranches WO1997011482A2 (fr)

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US52429695A 1995-09-05 1995-09-05
US524,296 1995-09-05

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WO2000049649A3 (fr) * 1999-02-17 2000-12-07 Applied Materials Inc Procede de prevention de la corrosion d'un materiau dielectrique
WO2001048808A1 (fr) * 1999-12-27 2001-07-05 Lam Research Corporation Procede post-gravure in situ pour eliminer des restes de resine photosensible et une passivation residuelle de paroi laterale
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
SG131051A1 (en) * 2005-09-08 2007-04-26 Lam Res Corp A gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US8500953B2 (en) 2005-08-08 2013-08-06 Lam Research Corporation Edge ring assembly with dielectric spacer ring
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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US5016332A (en) * 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates

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US6368517B1 (en) 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
WO2000049649A3 (fr) * 1999-02-17 2000-12-07 Applied Materials Inc Procede de prevention de la corrosion d'un materiau dielectrique
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
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US6852636B1 (en) 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
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