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WO1997000528A1 - Fabrication de condensateurs - Google Patents

Fabrication de condensateurs Download PDF

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Publication number
WO1997000528A1
WO1997000528A1 PCT/AU1996/000364 AU9600364W WO9700528A1 WO 1997000528 A1 WO1997000528 A1 WO 1997000528A1 AU 9600364 W AU9600364 W AU 9600364W WO 9700528 A1 WO9700528 A1 WO 9700528A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
capacitor
layers
web
deposition
Prior art date
Application number
PCT/AU1996/000364
Other languages
English (en)
Inventor
Kevin Andrew Loughrey
Albert Wai-Hing Mau
Zoran Vasic
Robert John Fleming
Hans Jorg Griesser
Original Assignee
Intag International Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intag International Limited filed Critical Intag International Limited
Priority to EP96917286A priority Critical patent/EP0835517A4/fr
Priority to JP9502420A priority patent/JPH11507767A/ja
Priority to AU59921/96A priority patent/AU5992196A/en
Publication of WO1997000528A1 publication Critical patent/WO1997000528A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Definitions

  • This invention relates to the fabrication of capacitors, and particularly, but not exclusively, to surface mount capacitors for use in microelectronics applications.
  • the invention also relates to aspects of plasma polymerisation.
  • Surface mount capacitors most usually are constructed as a rectangularly cross- sectioned elongate structure comprising interdigitated plate-like electrodes interposed by a dielectric material.
  • the electrodes each are fixed to one of a pair of terminals, and the capacitor is placed in circuit by fixing the terminals to lands on a printed circuit board by means such as soldering, gluing with a conductive adhesive or wire bonding.
  • soldering gluing with a conductive adhesive or wire bonding.
  • the capacitance is (approximately) directly proportional to the relative dielectric constant of the dielectric material and to the area of the plate electrodes, whilst it is inversely proportional to the distance between the electrodes.
  • it is common to utilise dielectric materials having a high dielectric constant, and to increase the surface area of the plate electrodes and/or decrease the electrode separation. Often the application also will dictate that the capacitor must be flexible to resist failure through bending.
  • NPO Negative Positive zerO
  • plastics materials such as polyethylenes
  • polyethylenes have a relative dielectric constant in the range of 2 to 5. They exhibit a thermal stability characteristic which is superior to ceramic dielectrics, and have the added advantage of being able to resist impact and bending. This attribute is most desirable where surface mount capacitors are incorporated into devices that are exposed to rough handling, such as RFID devices
  • SUBST ⁇ T ⁇ E SHEET (RUIS 26) ("bag tag"), smart card devices, PCMCIA cards and remote controllers for consumer electronics appliances.
  • RUIS 26 bag tag
  • smart card devices smart card devices
  • PCMCIA cards PCMCIA cards
  • remote controllers for consumer electronics appliances.
  • Thin film dielectric materials have the tendency not to be uniform, resulting in 'pin-holes' in their surface. These pin-holes inevitably lead to failure of capacitors constructed from the thin film dielectric material. It is thus important that the method of fabrication be able to lay-down a near-perfect thin film dielectric material. Dielectric materials of any given thickness can withstand only a limited applied potential difference before catastrophic breakdown occurs. In most microelectronics applications, the maximum potential difference is about 20 V. For plastics materials such as polyethylenes, having a voltage withstand rating of 600 V/ ⁇ m, this dictates a minimum thickness in microelectronics applications of about 1/30 ⁇ m. Even with a minimum thickness of this order, plastics materials still more than out-perform NPO dielectrics for the same given plate electrode surface area, in that the approximately 50 times lower dielectric constant is more than compensated by a 180 times reduction in thickness.
  • plastics films yield these properties when applied to capacitors as dielectric materials. Further, it is well known that thin contiguous films can be laid down in a vacuum using techmques such as plasma deposition of monomers to form a range of polymers on a substrate. There remains, however, the problem of how these processes can be harnessed for the mass production of capacitors.
  • An object of the present invention is to provide a fabrication process, amenable to mass production, for thin capacitors that can utilise low relative dielectric constant materials and yet achieve useable capacitance values.
  • the invention discloses a method of fabricating a capacitor precursor or capacitors, the method comprising the steps of: depositing a first metal strip continuously along a length of a moving web by passing metal particles through a first mask and onto an area of the web; depositing a dielectric polymer layer continuously over a length of the moving web and over at least a portion of the first metal strip, the dielectric layer being the product of a low temperature plasma polymerisation; and depositing a second offset metal strip continuously over at least a portion of the first metal strip and the dielectric layer, by passing metal particles through the first or a second mask.
  • the invention further discloses a method of fabricating capacitors, the method comprising the steps of: laying-down alternating layers of dielectric material and electrode-forming spaced-apart metal strips in a stacked arrangement in a manner such that, in the direction of stacking, the electrode strips in adjacent layers are offset and the electrode strips in alternate layers are in alignment; cutting one or more segments from the stacked arrangement, the or each segment spanning one electrode strip in the aligned stacking; applying a terminal-forming conductive plate to each of two opposed sides of the or each segment, each terminal plate forming an electrical connection with a respective end of alternate electrode strips; and slicing the or each segment transversely along its longitudinal axis to form a capacitor.
  • the step of depositing includes the steps of passing a substrate- forming transport layer past a metal deposition station, the metal deposition station including a slitted screen or mask through which metal is deposited onto the transport layer as a layer of electrode strips; passing the transport layer past a dielectric deposition station for deposition of a dielectric layer; and repeating the metal deposition and dielectric deposition steps until the requisite number of layers has been built up.
  • the invention further discloses apparatus for the fabrication of capacitors, the apparatus comprising: a continuous transport film carried between reversing drums; one or more metallisation stations, each having a slitted grid through which metal is deposited onto the transport film as spaced-apart electrode forming strips as the transport film passes the station; one or more dielectric deposition stations depositing a layer of dielectric material onto the passing transport film; whereby, with passing of the transport film alternately past a metallisation station and a dielectric deposition station, alternating layers of metal strips and dielectric material are laid-down in a stacked arrangement in a manner such that, in the direction of stacking, the electrode strips in adjacent layers are offset and the electrode strips in alternate layers are in alignment.
  • the invention yet further discloses a capacitor fabricated in accordance with the above-described method.
  • the invention yet further discloses a capacitor comprising a structure having alternating layers of plasma polymerised dielectric and metal, the structure having opposite side edges, each side edge exposing only alternate metal layers and not adjacent metal layers, the structure having been sub-divided from an elongated web.
  • the invention yet further discloses a capacitor precursor comprising an elongated ribbon-like structure having alternating layers of plasma polymerised dielectric and metal, the structure having opposite side edges, each side edge exposing only alternate metal layers and not adjacent metal layers.
  • Fig. 1 is a schematic cross sectional diagram of a reactor vessel sub-divided into three chambers.
  • Fig. 2 is a schematic representation of processing steps in the fabrication of an intermediate form of a surface mount capacitor
  • FIG. 3 shows an alternative process in fabrication of the intermediate form
  • Fig. 4 is a schematic diagram showing the intermediate form
  • Fig. 5 is a schematic representation of further processing steps in the fabrication of the surface mount capacitors.
  • Fig. 6 shows finished capacitors.
  • Embodiments of me present invention involve methods of manufacture of capacitors, manufacturing devices for practising those methods and capacitors and precursor materials which are formed by those methods and devices.
  • "Precursor” in this context refers to structures which are formed by the methods and devices taught here, but which are not per se individual capacitors in a commercial sense. Even though the precursors are not vendible as individual capacitors, they are considered commercially important in that they may be conveniently converted into individual capacitors.
  • SUBSTTTUTE SHEET (Rule 26) precursor may be converted into many capacitors having different values, (b) the precursor may be converted into many capacitors of a given value with more accuracy and precision than other methods, and (c) conversion of the precursors into individual capacitors can accommodate or compensate for irregularities which may find their way into the fabrication process so that higher yields may be obtained.
  • capacitors consist of alternating layers of conductive and dielectric materials.
  • the dielectric materials are formed using low temperamre plasma polymerisation.
  • the metal electrodes are formed using magnetron sputtering equipment, but other metal or metal vapour deposition processes are known and considered suitable. In this disclosure it will be illustrated how these techniques may be applied both in a batch process within a single vessel and in a continuous forming or moving web environment.
  • Fig. 1 illustrates a single reaction vessel 100 which is sub-divided into three chambers 101, 102 and 103.
  • a single vacuum inlet is capable of evacuating the entire vessel, eg all three chambers.
  • the lower chamber 101 houses a transport or moving carriage 104 which transports a substrate or a capacitor precursor (capacitor in the making) back and forth beneath the two upper chambers.
  • the carriage 104 is made from brass, is electrically grounded and is selectively and accurately reciprocated along a track by a toothed neoprene belt 105 driven by a DC stepping motor 106.
  • One of the upper chambers 103 houses the upper or live RF electrode 107 of d e plasma polymerisation electrode pair and also contains an inlet for the monomer vapour.
  • the other upper chamber 102 houses the magnetron and the metal target 108 which are used in sputtering the metal which forms the electrodes of the capacitor or precursor material.
  • the upper chambers are separated from the lower chamber by a plenum 109.
  • This plenum inco ⁇ orates the masks 110, 111 which control the deposition pattern for the dielectric and metallic layers.
  • This plenum also conveniently inco ⁇ orates a test station 112 which can be brought to bear onto the substrate or precursor(s) or capacitor(s) held by the carriage so that capacitance measurements can be made in situ.
  • the plenum and divider 114 are raised and lowered by an adjusting screw 113 which is inco ⁇ orated into the top plate 115. Locating pins 116 keep the plenum in alignment. This allows the gap between the carriage 104 and the masks 110, 111 and testing station 112 to be adjusted.
  • a reactor vessel shell 117 has been fabricated from a Pyrex (TM) glass cylinder having an inside diameter of 285mm, a height of 280mm and a wall thickness of 9mm.
  • the top and bottom plates 115, 118 are formed from ultra high molecular weight polyethylene and are positioned by fliree steel rods 119.
  • the brass carriage 104 is electrically grounded and so completes the RF plasma polymerisation circuit.
  • the carriage is a convenience which permits positiomng
  • SUBSTTTUTE SHEET (Rule 26) of the substrate from one location to another.
  • the carriage is adapted to transport a single sheet of substrate.
  • the carriage may also be adapted to transport a moving web from one location to another.
  • a heater 120 is optionally built into the carriage.
  • the vessel is evacuated using a turbomolecular pump backed by a rotary pump.
  • a neoprene rubber O-ring 121 set in a groove seals the top and bottom plate against the cylinder.
  • Pressure in the range of 100-0.01 torr are measured by a capacitance diaphragm gauge attached to the tube connecting the base plate of the reactor and the turbomolecular pump.
  • Below 0.01 torr pressure is measured by a cold cathode ionisation gauge attached to the argon inlet.
  • Suitable operating pressures are about 0.1-0.001 torr for the metal deposition steps and about 0.1-1.5 torr for the polymer dielectric deposition steps.
  • die carriage 104 is capable of transporting the substrate or web to two different laterally separated positions under the metal deposition mask 111. In me alternative, the carriage may transport to a single position at that location, with the mask translating from one alignment to another laterally spaced alignment on alternate metal depositing operations.
  • Each ribbon or "web” or precursor may consist of one or more discrete parallel rows of alternating metal and dielectric layers formed along the length of the web.
  • a direction along this length is referred to as the machine direction. Transverse to this direction may be referred to as the cross direction.
  • Each row, after machine direction slitting from the web as required, is capable of being sub-divided transversely (cross direction) into individual capacitors of any length or value, in very exact and repeatable increments.
  • the description relating to Figs. 2-6 concerns a continuous production memod. Continuous methods should be considered in the light of die teachings provided here regarding batch production.
  • the initial processing steps comprise the laying-down of alternating layers of dielectric material and metal strips 12 in a stacked arrangement.
  • Step 1 lays-down a first layer 11 of dielectric material onto a substrate (not shown) constructed of an inert material such as highly polished stainless steel that may be coated with a release agent.
  • the substrate may also be a polymer film.
  • KaptonTM polyimide film is suggested. Films or webs of KaptonTM in a thickness of about 75um have been demonstrated to be effective.
  • a preferred method of laying-down the dielectric material is in accordance with the process called "plasma polymerisation" and more particularly "low temperamre plasma polymerisation". This process is the subject of a US Patent No.
  • the first layer of dielectric material is of a predetermined thickness. Suitable monomers are perfluorocarbons, aliphatic and aliphatic hydrocarbons, silanes and siloxanes. A preferred monomer is hexamethyldisiloxane (HMDSO). Step 2 lays-down a first layer of spaced-apart metal strips 12 that ultimately form the electrodes of a capacitor.
  • the process utilised in laying down the strips of metal preferably can be either plasma deposition (sputtering) or a metal vapour technique.
  • the metal may include platinum, palladium, nickel, copper or aluminium. Platinum has been demonstrated as effective. Both these processes allow fine control over the thickness of the dielectric material and metal layers or strips respectively, and with particular reference to the laying-down of die dielectric material. These processes assure a dielectric material free of pin-holes.
  • a rotating turntable arrangement conveniently can be used.
  • the layers of dielectric material 11,13,15,17 occupy the interstices between the metal strips 12,14,16 thus fully enveloping the metal strip electrodes.
  • the metal strips 12,14,16 of adjacent layers are laid-down in a manner to be partially offset with respect to each other, but also arranged so that the electrodes of alternate metal strip layers are precisely aligned. This arrangement is for a reason that will become apparent.
  • Fig. 3 shows apparatus for effecting an alternative method in the fabrication of an intermediate form or precursor of a surface mount capacitor.
  • the apparams comprises reversing drum reels 20,21 carrying a continuous transport film 22 acting as a substrate.
  • the transport film 22 may be a plastics material such as KaptonTM, in which case it is liable to remain with the resultant capacitors for their lifetime.
  • KaptonTM a plastics material
  • a thin stainless steel film can be used, which might be 'peeled away' from the resultant capacitor laminate structore.
  • the film 22 passes by three stages, two of which relate to metallisation in the laying-down of the strip electrodes, with the other relating to polymerisation and the laying-down of the dielectric material.
  • the plastics film 22 dierefore passes a guide reel 23 and around substantially the whole circumference of a process drum 24 (cooled if required), at which point the transport substrate, film or web 22 comes under the influence of a vacuum metallisation source 25.
  • Metal is deposited onto the transport film 22 passing through a slitted screen or mask 26.
  • the slits are configured to be longitudinal of the transport film. Where there are openings in the screen 26, the metal will be laid onto the transport film 22, thus forming the electrode strips, such as are shown in Fig. 2.
  • the transport film 22 exits the process drum 24 by another guide reel 27, and so proceeds to a further process drum 28.
  • the transport film is subjected to a vacuum monomer source 29, thus with passage of the film, lays down a layer of dielectric material.
  • the film 22 then passes to a yet further guide reel 30, and then to another cooled process drum 31 that relates to a further metallisation source 32 and associated screen or mask 33.
  • a further layer of metallisation is laid down as electrode strips, and is borne off d e process drum 31 by a further guide reel 34.
  • the respective screens 26,33 are arranged so that adjacent layers of strip electrodes are offset in d e manner shown in Fig. 2.
  • the transport film 22 is reversed past the metallisation process drum 31 without a further layer of metal being laid-down, and so back to the polymerisation process drum 28, where a further layer of dielectric material is laid down and again passing to the first metallisation process drum 24.
  • the slitted screens 26,33 may be moving/reversing on reels (much in the nature of a typewriter ribbon) and continuously cleaned at a cleaning station.
  • the moving screens can be disposable after one or more usages.
  • Fig. 4 shows a stacked arrangement representing an intermediate form 10 of a capacitor.
  • the intermediate stacked arrangement conveniently is shown as nine layers of electrode strips, each adjacent layer separated by a dielectric layer.
  • the metal and dielectric layers are of a uniform and consistently reproducible thickness.
  • the vertical lines indicate the point of cutting along the longitudinal extent of d e stacked assembly to form segments.
  • the cutting points dierefore preferably coincide with end portions of the metal strips in alternate layers.
  • the cutting step can be achieved by use of a conventional precision splitter or guillotine.
  • the material occurring outside of the dimension X is waste. This form of slitting has the effect of exposing or revealing the side edges of the metal electrodes. The individual edges are later electrically connected as will be explained.
  • the polymer dielectric can be masked from the side edges of the metal layers so mat alternate but not adjacent metal layers form in direct contact.
  • Fig. 5 shows one segment 40 cut from the intermediate arrangement of Fig. 4 (albeit at a different scale to Fig. 4).
  • the segment 40 forms a series of interdigitated metal electrodes 41-54, alternate ones of which are exposed at a common edge.
  • the electrodes 41-47 are commonly connected to a metal terminal plate 55 at the left-hand edge, thereby commonly electrically connecting those alternate plate electrodes.
  • the odier electrodes 48-54 similarly are connected to another metal terminal plate 56 at the right-hand edge.
  • 'Connection' of the terminal plates can be achieved by dipping die respective segment edges into a conductive solution to achieve a coating by electroless plating or by a further metallisation process.
  • the separation between adjacent plate electrodes and the relative dielectric constant therefore are fixed.
  • the fabrication process is arranged such that the dimension X represents the length of the capacitor to suit each particular industry standard package size. Laying down a large number of thin film layers such that all the dimensions are precisely known is difficult to achieve repeatably.
  • a further processing step is taken to form a number of individual capacitors from the segment 40 shown in Fig. 5.
  • the segment 40 is sliced in a plane transverse to its longitudinal axis (dimension Z) to achieve a desired surface area (Z x X) , thus manipulating d e capacitance of the resultant capacitor, in accordance with the considerations discussed above.
  • the end face margins of the segments 40 must be cropped before d e slicing process takes place, as the exposed interdigitated electrodes will all be short-circuited by a metal layer built-up in the course of forming the terminals 55,56.
  • the position of the slices can be determined by calculation - that being a reflection of die selected surface area for each plate electrode, else can be obtained by trial slices to obtain a number of resulting capacitors of varying surface area. These capacitors can be measured for their capacitance value, and because of the high uniformity and reproducibility of the memod, capacitors of a highly predictable capacitance value can be produced simply by reproducing that slicing position. As such, the process is particularly suited to automated mass production.
  • Fig. 6 shows finished surface mount capacitors 60 that result from a final processing stage of removing metal smears resulting from the slicing procedure, by a light metal etching procedure.
  • the capacitors 60 may be packaged as required by a particular application, and are men ready for use.
  • the invention can provide me capacitor-making industry wid a variety of new methods, including continuous methods, and devices for fabricating a new type of capacitor.
  • the capacitor taught by the specification has applications in surface mount circuitry and in environments where temperature stability, thickness or price may be a consideration.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention a pour objet un condensateur (60) à plusieurs couches. Ce condensateur est fabriqué en déposant des couches alternées de métal (12) et de polymère (11) sur un tapis mobile (22). Une première bande métallique (21) est déposée en continu sur le tapis mobile (22) en assurant le passage de particules métalliques à travers un premier masque (26) sur une zone du tapis (22). Une couche de polymère diélectrique (13) est déposée en continu sur le tapis (22) et sur au moins une première partie de la première bande métallique par polymérisation au plasma. Une deuxième bande métallique de décalage (14) est ensuite déposée en continu sur au moins une partie de la première bande métallique (12) et la couche diélectrique (13) en assurant le passage de particules métalliques à travers le premier masque (26) ou un deuxième masque (33). Les condensateurs ainsi formés sont minces et stables sur une large plage de températures.
PCT/AU1996/000364 1995-06-19 1996-06-19 Fabrication de condensateurs WO1997000528A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP96917286A EP0835517A4 (fr) 1995-06-19 1996-06-19 Fabrication de condensateurs
JP9502420A JPH11507767A (ja) 1995-06-19 1996-06-19 コンデンサの製造方法
AU59921/96A AU5992196A (en) 1995-06-19 1996-06-19 Fabrication of capacitors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPN3635 1995-06-19
AUPN3635A AUPN363595A0 (en) 1995-06-19 1995-06-19 Fabrication of capacitors

Publications (1)

Publication Number Publication Date
WO1997000528A1 true WO1997000528A1 (fr) 1997-01-03

Family

ID=3787976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU1996/000364 WO1997000528A1 (fr) 1995-06-19 1996-06-19 Fabrication de condensateurs

Country Status (4)

Country Link
EP (1) EP0835517A4 (fr)
JP (1) JPH11507767A (fr)
AU (1) AUPN363595A0 (fr)
WO (1) WO1997000528A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1228942A2 (fr) 2001-02-03 2002-08-07 TRW LucasVarity Electric Steering Limited Systèmes de direction assistée électrique

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU200183U1 (ru) * 2020-07-15 2020-10-08 Овсеп Гагикович Андреасян Островковый тонкоплёночный конденсатор
WO2022015201A1 (fr) * 2020-07-15 2022-01-20 Овсеп Гагикович АНДРЕАСЯН Condensateur à film fin en îlots

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1361498A (en) * 1970-08-31 1974-07-24 Illinois Tool Works Monolithic capacitor components and proc.for producing same
DE2903292A1 (de) * 1979-01-29 1980-08-07 Siemens Ag Vorrichtung zur beschichtung von substraten mit abwechselnd uebereinanderliegenden metall- und kunststoffschichten
US4508049A (en) * 1978-11-02 1985-04-02 Siemens Aktiengesellschaft Method and a device for the production of electrical components, in particular laminated capacitors
EP0617440A2 (fr) * 1993-03-25 1994-09-28 Matsushita Electric Industrial Co., Ltd. Condensateur feuilleté à couches minces et procédé pour sa fabrication
WO1995015570A1 (fr) * 1993-12-03 1995-06-08 Compagnie Europeenne De Composants Electroniques Lcc Procede de fabrication de condensateur et condensateur issu d'un tel procede
WO1995015571A1 (fr) * 1993-12-03 1995-06-08 Compagnie Europeenne De Composants Electroniques Lcc Composant de type empile et procede de fabrication de composant de type empile
WO1995027293A1 (fr) * 1994-04-05 1995-10-12 Compagnie Europeenne De Composants Electroniques L.C.C. Procede de depot de dielectrique et/ou de conducteur sur un substrat

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1361498A (en) * 1970-08-31 1974-07-24 Illinois Tool Works Monolithic capacitor components and proc.for producing same
US4508049A (en) * 1978-11-02 1985-04-02 Siemens Aktiengesellschaft Method and a device for the production of electrical components, in particular laminated capacitors
DE2903292A1 (de) * 1979-01-29 1980-08-07 Siemens Ag Vorrichtung zur beschichtung von substraten mit abwechselnd uebereinanderliegenden metall- und kunststoffschichten
EP0617440A2 (fr) * 1993-03-25 1994-09-28 Matsushita Electric Industrial Co., Ltd. Condensateur feuilleté à couches minces et procédé pour sa fabrication
WO1995015570A1 (fr) * 1993-12-03 1995-06-08 Compagnie Europeenne De Composants Electroniques Lcc Procede de fabrication de condensateur et condensateur issu d'un tel procede
WO1995015571A1 (fr) * 1993-12-03 1995-06-08 Compagnie Europeenne De Composants Electroniques Lcc Composant de type empile et procede de fabrication de composant de type empile
WO1995027293A1 (fr) * 1994-04-05 1995-10-12 Compagnie Europeenne De Composants Electroniques L.C.C. Procede de depot de dielectrique et/ou de conducteur sur un substrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0835517A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1228942A2 (fr) 2001-02-03 2002-08-07 TRW LucasVarity Electric Steering Limited Systèmes de direction assistée électrique

Also Published As

Publication number Publication date
JPH11507767A (ja) 1999-07-06
EP0835517A4 (fr) 2000-01-26
EP0835517A1 (fr) 1998-04-15
AUPN363595A0 (en) 1995-07-13

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