+

WO1996028812B1 - Transducteur magnetoresistant façonne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines - Google Patents

Transducteur magnetoresistant façonne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines

Info

Publication number
WO1996028812B1
WO1996028812B1 PCT/US1996/003098 US9603098W WO9628812B1 WO 1996028812 B1 WO1996028812 B1 WO 1996028812B1 US 9603098 W US9603098 W US 9603098W WO 9628812 B1 WO9628812 B1 WO 9628812B1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
spin valve
valve type
magnetoresistive sensor
type magnetoresistive
Prior art date
Application number
PCT/US1996/003098
Other languages
English (en)
Other versions
WO1996028812A1 (fr
Filing date
Publication date
Priority claimed from US08/401,553 external-priority patent/US5608593A/en
Application filed filed Critical
Priority to KR1019960706326A priority Critical patent/KR970703585A/ko
Priority to JP8527710A priority patent/JPH10504926A/ja
Priority to EP96908694A priority patent/EP0759202A4/fr
Publication of WO1996028812A1 publication Critical patent/WO1996028812A1/fr
Publication of WO1996028812B1 publication Critical patent/WO1996028812B1/fr

Links

Abstract

L'invention concerne un transducteur magnétorésistant et son procédé de fabrication. La structure du transducteur, du type à valve en rotation, comprend, au niveau inférieur, une couche ferromagnétique fixée (58) et, au niveau supérieur, une couche ferromagnétique active (62) séparées par une couche d'espacement en métal amagnétique (60). La couche ferromagnétique active (62) et la couche d'espacement sous-jacente (60) sont façonnées en une structure mésa à cotés opposés coniques pour mieux contribuer à la planarisation de surface dans un processus de fabrication des couches minces. Il est possible de déposer une paire de sections de couche magnétique permanente (68, 70) aux extrémités de la structure en valve à rotation, dans une relation généralement coplanaire, pour contribuer à la stabilisation des domaines, mais on peut également les en séparer par une couche de démarcation relativement mince. La largeur de la piste de lecture magnétique du dispositif peut être déterminée de manière précise et fidèle selon un procédé photolithographique qui permet de définir l'espace entre les sections de couche magnétique permanente (68, 70) et qui recouvre la couche ferromagnétique active (62).
PCT/US1996/003098 1995-03-09 1996-03-04 Transducteur magnetoresistant façonne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines WO1996028812A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019960706326A KR970703585A (ko) 1995-03-09 1996-03-04 소정 형태의 스핀 밸브형 자기 저항성 트랜스듀서 및 도메인 안정화 기법을 사용하여 이를 제조하는 방법(Shaped Spin Valve Type Magnetoresistive Transducer and Method for Fabricating the Same Incorporating Domain Stabilization Technique)
JP8527710A JPH10504926A (ja) 1995-03-09 1996-03-04 成形されたスピンバルブ型磁気抵抗トランスデューサおよび領域安定化技術を取入れたその製造方法
EP96908694A EP0759202A4 (fr) 1995-03-09 1996-03-04 Transducteur magnetoresistant fa onne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/401,553 1995-03-09
US08/401,553 US5608593A (en) 1995-03-09 1995-03-09 Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique

Publications (2)

Publication Number Publication Date
WO1996028812A1 WO1996028812A1 (fr) 1996-09-19
WO1996028812B1 true WO1996028812B1 (fr) 1996-11-07

Family

ID=23588223

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/003098 WO1996028812A1 (fr) 1995-03-09 1996-03-04 Transducteur magnetoresistant façonne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines

Country Status (5)

Country Link
US (2) US5608593A (fr)
EP (1) EP0759202A4 (fr)
JP (1) JPH10504926A (fr)
KR (1) KR970703585A (fr)
WO (1) WO1996028812A1 (fr)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991125A (en) * 1994-09-16 1999-11-23 Kabushiki Kaisha Toshiba Magnetic head
US5896251A (en) * 1994-12-26 1999-04-20 Kabushiki Kaisha Toshiba Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film
US5796560A (en) * 1995-03-13 1998-08-18 Kabushiki Kaisha Toshiba Magnetoresistive head
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US5764445A (en) * 1995-06-02 1998-06-09 Applied Magnetics Corporation Exchange biased magnetoresistive transducer
DE69619166T2 (de) * 1995-06-15 2002-06-20 Tdk Corp., Tokio/Tokyo Magnetoresistiver Wandler mit "Spin-Valve" Struktur und Herstellungsverfahren
JP3651619B2 (ja) * 1995-06-29 2005-05-25 富士通株式会社 磁気抵抗効果型トランスデューサ及び磁気記録装置
KR100234176B1 (ko) * 1995-06-30 1999-12-15 이형도 자기 저항소자 및 그 제조방법
US5790351A (en) * 1995-07-07 1998-08-04 Nec Corporation Magnetoresistive head with conductive underlayer
US5818684A (en) * 1995-09-13 1998-10-06 Kabushiki Kaisha Toshiba Shield type magnetoresistive head arranged for weakening of a galvano-current magnetic field
EP0770991A3 (fr) * 1995-10-26 1998-05-20 Read-Rite Corporation Tête magnétorésistive à film mince à jonction contigue
US6545847B2 (en) 1996-02-14 2003-04-08 Hitachi, Ltd. Magnetoresistive effect head
US5936810A (en) * 1996-02-14 1999-08-10 Hitachi, Ltd. Magnetoresistive effect head
US5708358A (en) * 1996-03-21 1998-01-13 Read-Rite Corporation Spin valve magnetoresistive transducers having permanent magnets
US5764056A (en) * 1996-05-16 1998-06-09 Seagate Technology, Inc. Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors
US5742459A (en) * 1996-06-20 1998-04-21 Read-Rite Corporation Magnetic head having encapsulated magnetoresistive transducer and multilayered lead structure
US6690553B2 (en) 1996-08-26 2004-02-10 Kabushiki Kaisha Toshiba Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
JP3349925B2 (ja) * 1996-09-10 2002-11-25 アルプス電気株式会社 薄膜磁気ヘッドの製造方法
US6249406B1 (en) * 1996-09-23 2001-06-19 International Business Machines Corporation Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
JP3291208B2 (ja) * 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
US5739990A (en) * 1996-11-13 1998-04-14 Read-Rite Corporation Spin-valve GMR sensor with inbound exchange stabilization
JP3455037B2 (ja) * 1996-11-22 2003-10-06 アルプス電気株式会社 スピンバルブ型薄膜素子、その製造方法、及びこのスピンバルブ型薄膜素子を用いた薄膜磁気ヘッド
US6144534A (en) * 1997-03-18 2000-11-07 Seagate Technology Llc Laminated hard magnet in MR sensor
US5818685A (en) * 1997-05-05 1998-10-06 Read-Rite Corporation CIP GMR sensor coupled to biasing magnet with spacer therebetween
JP3263004B2 (ja) * 1997-06-06 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
US5956215A (en) * 1997-08-12 1999-09-21 Storage Technology Corporation High density thin film coupled element read head with support element to prevent damage to magnetoresistive element
JP3833362B2 (ja) * 1997-10-01 2006-10-11 富士通株式会社 磁気抵抗効果型ヘッド
US6141191A (en) 1997-12-05 2000-10-31 International Business Machines Corporation Spin valves with enhanced GMR and thermal stability
JP3114683B2 (ja) 1998-01-22 2000-12-04 日本電気株式会社 磁気抵抗効果素子およびその製造方法、ならびにこの磁気抵抗効果素子を用いた磁気抵抗効果センサ,磁気抵抗検出システムおよび磁気記憶システム
JP2925542B1 (ja) 1998-03-12 1999-07-28 ティーディーケイ株式会社 磁気抵抗効果膜および磁気抵抗効果型ヘッド
US6134090A (en) * 1998-03-20 2000-10-17 Seagate Technology Llc Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer
US6007731A (en) * 1998-03-23 1999-12-28 Headway Technologies, Inc. Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
US6034848A (en) * 1998-04-22 2000-03-07 International Business Machines Corporation Low profile multi-layer coil merged thin film magnetic head
US6099699A (en) * 1998-04-22 2000-08-08 Matsushita-Kotobuki Electronics Industries, Ltd. Thin encapsulation process for making thin film read/write heads
US6356420B1 (en) 1998-05-07 2002-03-12 Seagate Technology Llc Storage system having read head utilizing GMR and AMr effects
US6178066B1 (en) 1998-05-27 2001-01-23 Read-Rite Corporation Method of fabricating an improved thin film device having a small element with well defined corners
JPH11354860A (ja) 1998-06-10 1999-12-24 Read Rite Smi Kk スピンバルブ磁気変換素子及び磁気ヘッド
JP3869557B2 (ja) 1998-06-30 2007-01-17 Tdk株式会社 磁気抵抗効果膜および磁気抵抗効果型ヘッド
US6156487A (en) * 1998-10-23 2000-12-05 Matsushita-Kotobuki Electronics Industries, Ltd. Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing
US6445553B2 (en) 1999-04-02 2002-09-03 Read-Rite Corporation Method and system for fabricating a high density magnetoresistive device
US6201673B1 (en) * 1999-04-02 2001-03-13 Read-Rite Corporation System for biasing a synthetic free layer in a magnetoresistance sensor
JP2000331318A (ja) * 1999-05-18 2000-11-30 Fujitsu Ltd 磁気抵抗効果ヘッド
US6469877B1 (en) 1999-06-15 2002-10-22 Read-Rite Corporation Spin valve device with improved exchange layer defined track width and method of fabrication
US6292335B1 (en) * 1999-06-25 2001-09-18 International Business Machines Corporation Continuous junction spin valve read head stabilized without hard bias layers
US6687098B1 (en) * 1999-07-08 2004-02-03 Western Digital (Fremont), Inc. Top spin valve with improved seed layer
US6278592B1 (en) * 1999-08-17 2001-08-21 Seagate Technology Llc GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field
US6385017B1 (en) 1999-09-30 2002-05-07 Headway Technologies, Inc. Continuous free layer spin valve sensor with patterned exchange underlayer stabilization
US6381105B1 (en) 1999-10-22 2002-04-30 Read-Rite Corporation Hybrid dual spin valve sensor and method for making same
JP2001126219A (ja) * 1999-10-28 2001-05-11 Read Rite Corp スピンバルブ型磁気抵抗センサ及び薄膜磁気ヘッド
US6430013B1 (en) 1999-12-06 2002-08-06 International Business Machines Corporation Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
JP3537723B2 (ja) 2000-01-05 2004-06-14 アルプス電気株式会社 薄膜磁気ヘッド及び浮上式磁気ヘッド
US6496337B1 (en) * 2000-03-20 2002-12-17 Headway Technologies, Inc. Copper alloy GMR recording head
JP3607850B2 (ja) 2000-04-06 2005-01-05 アルプス電気株式会社 磁気抵抗効果型薄膜磁気素子及びその製造方法と、その磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッド
JP2001307308A (ja) * 2000-04-24 2001-11-02 Fujitsu Ltd 磁気抵抗効果型ヘッドおよび情報再生装置
US6556392B1 (en) * 2000-04-27 2003-04-29 Seagate Technology Llc Spin valve head with exchange bias stabilized free layer
US6496334B1 (en) 2000-05-26 2002-12-17 Read-Rite Corportion Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof
US6428714B1 (en) * 2000-06-05 2002-08-06 Headway Technologies, Inc. Protective layer for continuous GMR design
JP2001358381A (ja) * 2000-06-14 2001-12-26 Fujitsu Ltd 磁気抵抗効果膜、磁気抵抗効果型ヘッド、および情報再生装置
JP3260741B1 (ja) * 2000-08-04 2002-02-25 ティーディーケイ株式会社 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法
US6517896B1 (en) * 2000-08-07 2003-02-11 Headway Technologies, Inc. Spin filter bottom spin valve head with continuous spacer exchange bias
US6579625B1 (en) * 2000-10-24 2003-06-17 Motorola, Inc. Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
US6885527B1 (en) * 2000-10-26 2005-04-26 Headway Technologies, Inc. Process to manufacture a top spin valve
US6801408B1 (en) 2000-11-02 2004-10-05 Western Digital (Fremont), Inc. Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof
JP2002151757A (ja) * 2000-11-09 2002-05-24 Alps Electric Co Ltd 薄膜磁気素子及びその製造方法
US6570745B1 (en) * 2000-11-20 2003-05-27 International Business Machines Corporation Lead overlaid type of sensor with sensor passive regions pinned
US6721142B1 (en) * 2000-12-21 2004-04-13 Western Digital (Fremont) Inc. Non-corrosive GMR slider for proximity recording
US6614630B2 (en) * 2001-04-23 2003-09-02 Headway Technologies, Inc. Top spin valve heads for ultra-high recording density
JP3379704B2 (ja) * 2001-07-24 2003-02-24 ティーディーケイ株式会社 薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
US6668443B2 (en) * 2001-07-30 2003-12-30 Headway Technologies, Inc. Process for manufacturing a spin valve recording head
US7027274B1 (en) 2001-08-30 2006-04-11 Western Digital (Fremont), Inc. Spin-dependent tunneling read/write sensor for hard disk drives
EP1423861A1 (fr) * 2001-08-30 2004-06-02 Koninklijke Philips Electronics N.V. Dispositif magnetoresistant et dispositif electronique
US6518588B1 (en) * 2001-10-17 2003-02-11 International Business Machines Corporation Magnetic random access memory with thermally stable magnetic tunnel junction cells
US6773515B2 (en) 2002-01-16 2004-08-10 Headway Technologies, Inc. FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
JP3984839B2 (ja) * 2002-02-26 2007-10-03 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果ヘッド
US7035060B2 (en) * 2002-03-06 2006-04-25 Headway Technologies, Inc. Easily manufactured exchange bias stabilization scheme
US6776883B2 (en) * 2002-03-19 2004-08-17 Headway Technologies, Inc. Process of manufacturing a magnetic read head
US6989971B2 (en) * 2002-04-05 2006-01-24 Hitachi Global Storage Technologies Netherlands, B.V. Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process
US6842969B2 (en) * 2002-04-05 2005-01-18 Headway Technologies, Inc. Process for manufacturing a magnetic read head
US20030231437A1 (en) * 2002-06-17 2003-12-18 Childress Jeffrey R. Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
US7075761B2 (en) * 2002-08-27 2006-07-11 Hitachi Global Storage Technologies Netherlands B.V. Lead-defined and shaped magnetic sensor
US6944939B2 (en) * 2003-03-21 2005-09-20 Headway Technologies, Inc. Method for forming a GMR sensor having improved longitudinal biasing
US7194796B2 (en) * 2003-07-10 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for creating a magnetic head
EP1498744B1 (fr) * 2003-07-18 2011-08-10 Yamaha Corporation Capteur magnétique et son procédé de fabrication
JP4776164B2 (ja) * 2003-12-25 2011-09-21 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置および磁気メモリ
JP2006086275A (ja) * 2004-09-15 2006-03-30 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置
JP5095076B2 (ja) * 2004-11-09 2012-12-12 株式会社東芝 磁気抵抗効果素子
US7672090B2 (en) * 2005-03-31 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
JP2007096105A (ja) 2005-09-29 2007-04-12 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ
JP4768488B2 (ja) * 2006-03-27 2011-09-07 株式会社東芝 磁気抵抗効果素子,磁気ヘッド,および磁気ディスク装置
US9023422B1 (en) * 2011-08-31 2015-05-05 Maxim Integrated Products, Inc. High rate deposition method of magnetic nanocomposites
JP7098914B2 (ja) * 2017-11-14 2022-07-12 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214205A (ja) * 1985-03-20 1986-09-24 Sony Corp ヨ−ク型磁気抵抗効果型磁気ヘツド
JPH0721848B2 (ja) * 1987-02-17 1995-03-08 シーゲイト テクノロジー インターナショナル 磁気抵抗センサ及びその製造方法
US5079035A (en) * 1989-10-10 1992-01-07 International Business Machines Corporation Method of making a magnetoresistive read transducer having hard magnetic bias
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5270895A (en) * 1991-07-05 1993-12-14 U.S. Philips Corporation Combined read/write thin-film magnetic head with composite shared flux guide
JPH0536032A (ja) * 1991-08-01 1993-02-12 Hitachi Ltd 磁気抵抗効果型ヘツド及びその製造方法
US5329413A (en) * 1992-01-10 1994-07-12 Kabushiki Kaisha Toshiba Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
MY108956A (en) * 1992-11-12 1996-11-30 Quantum Peripherals Colorado Inc Magnetoresistive device and method having improved barkhausen noise suppression
US5301079A (en) * 1992-11-17 1994-04-05 International Business Machines Corporation Current biased magnetoresistive spin valve sensor
JPH0779034A (ja) * 1993-04-13 1995-03-20 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
JPH0714710A (ja) * 1993-06-25 1995-01-17 Fujitsu Ltd 磁気抵抗効果素子
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor

Similar Documents

Publication Publication Date Title
WO1996028812B1 (fr) Transducteur magnetoresistant façonne du type a valve en rotation et son procede de fabrication, y compris la technique de stabilisation des domaines
US5608593A (en) Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
US5634260A (en) Method of making a magnetoresistive device having improved Barkhausen noise suppression
KR100295289B1 (ko) 후방자속가이드로서의감지층을갖는자기터널접합부자기저항판독헤드
US6943995B2 (en) Continuous free layer spin valve sensor with patterned exchange underlayer stabilization
US6313973B1 (en) Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
US6204071B1 (en) Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration
JP3650344B2 (ja) スピン・バルブ
US7533456B2 (en) Fabrication process for magneto-resistive effect devices of the CPP structure
US6331773B1 (en) Pinned synthetic anti-ferromagnet with oxidation protection layer
JPH11213349A (ja) 磁束ガイドとしての検知層を備える磁気トンネル接合磁気抵抗読取りヘッド
US20040196595A1 (en) Magnetoresistive sensor with magnetostatic coupling of magnetic regions
US20050041339A1 (en) Structure and process to fabricate lead overlay (LOL) on the bottom spin valve
US7103962B2 (en) Method for manufacturing a thin film head
US6139908A (en) Magnetoresistance device and production method thereof
US6757962B2 (en) Method for manufacturing exchange bias type magnetic field sensing element
US5805389A (en) Magnetoresistive head
US20050111144A1 (en) Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
US6229678B1 (en) Magnetoresistive read sensor
US6026559A (en) Method for fabricating a complex magnetic head including a reproducing magneto-resistance head
US20040141257A1 (en) Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same
US6570744B1 (en) Magnetoresistance effect film and device
US7196876B2 (en) Method to make abutted junction GMR head without lead shunting
US20030189801A1 (en) Patterned exchange bias GMR using metallic buffer layer
US6538860B1 (en) Spin-valve type magnetoresistive element capable of preventing barkhausen noise
点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载