WO1996028812B1 - Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique - Google Patents
Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization techniqueInfo
- Publication number
- WO1996028812B1 WO1996028812B1 PCT/US1996/003098 US9603098W WO9628812B1 WO 1996028812 B1 WO1996028812 B1 WO 1996028812B1 US 9603098 W US9603098 W US 9603098W WO 9628812 B1 WO9628812 B1 WO 9628812B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- spin valve
- valve type
- magnetoresistive sensor
- type magnetoresistive
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 230000006641 stabilisation Effects 0.000 title abstract 2
- 238000011105 stabilization Methods 0.000 title abstract 2
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 17
- 238000000926 separation method Methods 0.000 claims abstract 9
- 125000006850 spacer group Chemical group 0.000 claims abstract 6
- 230000005291 magnetic effect Effects 0.000 claims abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims 6
- 230000001154 acute effect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910015136 FeMn Inorganic materials 0.000 claims 1
- 229910003289 NiMn Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 1
- 229910001120 nichrome Inorganic materials 0.000 claims 1
- 229910000510 noble metal Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
Abstract
A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer (58) and an active, top ferromagnetic layer (62) separated by a thin nonmagnetic metal spacer layer (60). The active ferromagnetic layer (62) and underlying spacer layer (60) are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions (68, 70) may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions (68, 70) overlying the active ferromagnetic layer (62).
Claims
ENDED L IM
[received by the International Bureau on 10 September 1996 (10.09.96); original claim 21 cancelled; original claims 1, 20, 22, 24, 31 and 32 amended; remaining claims unchanged (3 pages)]
1. A spin valve type magnetoresistive sensor incorporating active and pinned ferromagnetic layers separated by a non-magnetic spacer layer formed on a substrate, wherein the improvement in combination comprises: a pinning layer overlying said substrate, said pinning layer underlying said pinned ferromagnetic layer; said spacer and active ferromagnetic layers comprising a mesa structure overlying said pinned ferromagnetic layer and having tapered opposing sides thereof; and a separation layer overlying said pinned ferromagnetic layer and said tapered opposing sides of said mesa structure, said separation layer also overlying a predetermined portion of an upper surface of said active ferromagnetic layer adjoining said tapered opposing sides.
2. The spin valve type magnetoresistive sensor of claim 1 further comprising: an underlayer formed on said substrate and interposed between said substrate and said pinning layer.
3. The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers comprise a transistion metal.
4. The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers are substantially between 20-200 A thick. 5. The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers are substantially 100 A thick.
6. The spin valve type magnetoresistive sensor of claim 1 wherein said non¬ magnetic spacer layer comprises a noble metal.
7. The spin valve type magnetoresistive sensor of claim 1 wherein said non- magnetic spacer layer is substantially between 10-50 A thick.
8. The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises an exchange coupled antiferromagnet.
9. The spin valve type magnetoresistive sensor of claim 8 wherein said exchange coupled antiferromagnet is selected from a group consisting of (FeMn, NiMn or NiCoO).
10. The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises a permanent magnet layer.
11. The spin valve type magnetoresistive sensor of claim 10 wherein said permanent magnet layer is selected from a group consisting of (Cr and its alloys).
12. The spin valve type magnetoresistive sensor of claim 10 wherein said permanent magnet layer is substantially between 50-500 A thick. 13. The spin valve type magnetoresistive sensor of claim 2 wherein said underlayer is selected from a group consisting of (Ta or oxides of Al or Si).
14. The spin valve type magnetoresistive sensor of claim 2 further comprising a buffer layer interposed between said underlayer and said pinning layer.
15. The spin valve type magnetoresistive sensor of claim 14 wherein said buffer layer is selected from a group consisting of (Cu or NiCr).
16. The spin valve type magnetoresistive sensor of claim 15 wherein said buffer layer is substantially between 50-300 A thick.
17. The spin valve type magnetoresistive sensor of claim 14 wherein said buffer layer comprises Cr. 18. The spin valve type magnetoresistive sensor of claim 17 wherein said buffer layer is substantially between 50-100 A thick.
19. The spin valve type magnetoresistive sensor of claim 1 wherein said tapered opposing sides form an acute angle with respect to a plane of said pinned ferromagnetic layer. 20. The spin valve type magnetoresistive sensor of claim 19 wherein said acute angle is substantially 45°.
22. The spin valve type magnetoresistive sensor of claim 1 wherein said separation layer comprises Cr.
23. The spin valve type magnetoresistive sensor of claim 22 wherein said separation layer is substantially 50 A thick. 24. The spin valve type magnetoresistive sensor of claim 1 further comprising: a permanent magnet layer overlying said separation layer.
25. The spin valve type magnetoresistive sensor of claim 24 further comprising: a conductor layer overlying at least a portion of said permanent magnet layer.
26. The spin valve type magnetoresistive sensor of claim 25 further comprising: a capping layer overlying said conductor, permanent magnet and active ferromagnetic layers.
27. The spin valve type magnetoresistive sensor of claim 26 wherein said capping layer comprises Ta.
28. The spin valve type magnetoresistive sensor of claim 27 "further comprising: a gap layer overlying said capping layer.
29. The spin valve type magnetoresistive sensor of claim 28 wherein said gap layer is selected from a group consisting of (oxides of Al or Si).
30. The spin valve type magnetoresistive sensor of claim 1 -further comprising: an additional separation layer interposed between said pinning layer and said pinned ferromagnetic layer.
31. The spin valve type magnetoresistive sensor of claim 30 wherein said additional separation layer is selected from a group consisting of (Cr or Ta).
32. The spin valve type magnetoresistive sensor of claim 30 wherein said additional separation layer is substantially between 10-100 A thick. 33. A magnetoresistive device comprising: a substrate; a pinning layer overlying said substrate; a first ferromagnetic layer overlying said pinning layer;
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960706326A KR970703585A (en) | 1995-03-09 | 1996-03-04 | Shaped Spin Valve Type Magnetoresistive Transducer and Method for Fabricating the Same Incorporating Domain Stabilization Technique |
| JP8527710A JPH10504926A (en) | 1995-03-09 | 1996-03-04 | Molded spin-valve magnetoresistive transducer and its manufacturing method incorporating area stabilization technology |
| EP96908694A EP0759202A4 (en) | 1995-03-09 | 1996-03-04 | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/401,553 | 1995-03-09 | ||
| US08/401,553 US5608593A (en) | 1995-03-09 | 1995-03-09 | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1996028812A1 WO1996028812A1 (en) | 1996-09-19 |
| WO1996028812B1 true WO1996028812B1 (en) | 1996-11-07 |
Family
ID=23588223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1996/003098 WO1996028812A1 (en) | 1995-03-09 | 1996-03-04 | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5608593A (en) |
| EP (1) | EP0759202A4 (en) |
| JP (1) | JPH10504926A (en) |
| KR (1) | KR970703585A (en) |
| WO (1) | WO1996028812A1 (en) |
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-
1995
- 1995-03-09 US US08/401,553 patent/US5608593A/en not_active Expired - Fee Related
-
1996
- 1996-03-04 WO PCT/US1996/003098 patent/WO1996028812A1/en not_active Application Discontinuation
- 1996-03-04 KR KR1019960706326A patent/KR970703585A/en not_active Withdrawn
- 1996-03-04 JP JP8527710A patent/JPH10504926A/en active Pending
- 1996-03-04 EP EP96908694A patent/EP0759202A4/en not_active Withdrawn
- 1996-06-17 US US08/664,452 patent/US5637235A/en not_active Expired - Fee Related
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