WO1996007208A1 - Structure conductrice de courant avec au moins une barriere de potentiel, et procede de fabrication de cette structure - Google Patents
Structure conductrice de courant avec au moins une barriere de potentiel, et procede de fabrication de cette structure Download PDFInfo
- Publication number
- WO1996007208A1 WO1996007208A1 PCT/NL1995/000036 NL9500036W WO9607208A1 WO 1996007208 A1 WO1996007208 A1 WO 1996007208A1 NL 9500036 W NL9500036 W NL 9500036W WO 9607208 A1 WO9607208 A1 WO 9607208A1
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- WO
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- Prior art keywords
- region
- fact
- bodies
- magnetoresistive
- manufacturing
- Prior art date
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- 238000005036 potential barrier Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 5
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000000428 dust Substances 0.000 claims abstract 2
- 230000005291 magnetic effect Effects 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000000694 effects Effects 0.000 claims description 13
- 239000002784 hot electron Substances 0.000 claims description 11
- 230000001419 dependent effect Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 230000001443 photoexcitation Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 27
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- -1 e.g. Co Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- De invention relates to materials and structures with magnetoresistant properties, such as a NiFe film in which the well known anisotropic magnetoresistance occurs, or for example a magnetic sandwich, multilayer or granular system in which the so-called giant magnetoresistance effect or spin-valve effect occurs, and also to (ferro)magnetic tunnel junctions in which the so-called magnetic tunnel effect or spin polarised tunnelling takes place, and also to a method of manufacturing hot-electron transistors, including metal base transistors and structures based on these transistors.
- magnetoresistant properties such as a NiFe film in which the well known anisotropic magnetoresistance occurs, or for example a magnetic sandwich, multilayer or granular system in which the so-called giant magnetoresistance effect or spin-valve effect occurs, and also to (ferro)magnetic tunnel junctions in which the so-called magnetic tunnel effect or spin polarised tunnelling takes place, and also to a method of manufacturing hot-electron transistors, including metal base transistors and
- Giant magnetoresistance or the spin-valve effect is a new kind of magnetoresistance, discovered in 1988 in magnetic multilayers consisting of 30 to 60 stacked layers of Fe and Cr with a thickness of about 1 nm, and shows usually a much larger effect than the classical anisotropic magnetoresistance, occurring in e.g. Ni-Fe films (see for example R. Coehoorn in Europhys. News 24(1993), pp. 43-44).
- One aspect of the invention provides a method to measure the perpendicular electrical resistance of magnetoresistive materials and structures, amongst others magnetic multilayers and even sandwiches displaying giant magnetoresistant properties, by providing the base of a metal base transistor structure (in some cases called ballistic- or tunnelling hot-electron transfer amplifier, tunnel transistor, tunnel-emission triode or hot-electron triode, but here labelled metal base transistor) with at least a magnetoresistive material or magnetoresistive structure.
- a metal base transistor structure in some cases called ballistic- or tunnelling hot-electron transfer amplifier, tunnel transistor, tunnel-emission triode or hot-electron triode, but here labelled metal base transistor
- This solution may lead to new physical insights by the occurrence of some fundamentally new physical processes and to e.g. more sensitive magnetic field sensors or magnetic solid state memory systems.
- Metal base transistors belonging to the class of hot electron transistors, were being developed since 1960 to realise transistors for ultra high frequency applications (See for example S.M. Sze, high speed semiconductor devices, New York: Wiley Interscience, 1990, pp.399-461) but lost interest due to basic manufacturing problems and bad prospects on sufficient current gain, characteristics which are not applicable to the present invention.
- a second aspect of the invention provides a way to replace a tunnel emitter and/or tunnel collector of a metal base transistor structure by a magnetic tunnel structure, to be able to realise for example sensitive magnetic field sensors.
- the magnetic tunnel effect takes place in for example ferromagnet / insulator / ferromagnet structures or ferromagnet / semiconductor / ferromagnet structures, in which the tunnel resistance depends on the angle between the magnetisations of the two ferromagnetic layers and on an applied magnetic field, and can thus serve as a magnetic field sensor (See for example T. Yaoi et al. in J. Magn. Magn. Mat. 126(1993) pp. 430-432).
- a third aspect of the invention aims at a combination of the first and the second aspect of the invention, resulting in metal base transistor structures in which both the magnetic tunnelling as the magnetoresistance is implemented.
- a fourth aspect of the invention relates to photo-excitation of electrons in a magnetoresistive material of magnetoresistive structure wherein said material or structure is placed on a semiconducting body. Electrons within the said material or structure can pass the potential barrier formed by the interface of said material or structure and semiconducting body after stimulation by photo-excitation, leading to a magnetic field dependent leak current of said potential barrier.
- This aspect of the invention aims at a way to measure perpendicular transport of electrons in for example a magnetic (multilayer) structure, for example for magnetic sensor or magnetic solid state memory applications.
- a fifth aspect of the invention relates to a method of manufacturing hot electron transistors, including metal base transistors and structures based on these.
- De manufacturing of metal base transistor structures is one of the biggest dilemmas for the realisation of properly functioning devices.
- Deposition of semiconducting materials on a metal common in fabricating semiconductor / metal / semiconductor metal base transistors, leads to a low quality of the semiconducting material, because deposition on a metal can only take place at low temperatures to avoid diffusion.
- Low quality semiconductor material leads to poor electron transport which causes serious difficulties to realise metal base transistor with sufficient current gain.
- Single crystal point contact semiconductors are unpractical from the point of view of Schottky barrier quality, fabrication and reliability.
- the fifth aspect of the invention is characterised by a method of manufacturing hot electron transistors, including metal base transistors and structures base on these, by contacting bodies, provided of at least one clean, flat and optically smooth surface, in a dust-arm atmosphere, by which a spontaneous bonding sets in, a technique known as (direct) bonding.
- This method of manufacturing may provide important advantages and may be the solution to the realisation and the functioning of hot electron transistors, including metal base transistors and structures based on these.
- the (direct) bonding is a technique which is being applied to realise single crystalline layers on an insulator, also called SOI or Silicon on Insulator (See for example S. Bengtsson in J. Electronic Mat. 21(1992) pp. 841-862). Bonding techniques in which the bonding is between semiconductors and metals, or between metals is described by J. Haisma et al. in Applied Optics 33(1994) pp. 1154-1169. Not mentioned is the fact that good Schottky barriers can be made using (direct) bonding, and because of this also metal base transistors.
- Figure 1 gives a cross section of a possible arrangement of the first aspect of the invention, namely a semiconductor / metal or metallic structure / semiconductor metal base transistor structure.
- layer 1 is a semiconducting body, for example single crystalline n-silicon, and serves in this example as a collector.
- ohmic contact 4 Placed on it is an ohmic contact 4 which serves as a collector connection.
- the base 2 of the transistor structure is for example a metal film or metallic structure, for example Au with a thickness of 10 run, and can be deposited amongst others by means of standard deposition techniques such as evaporation, sputtering, molecular beam epitaxy and so on.
- a contact 5 is placed on base 2 and serves as a base connection.
- Layer 3 is a semiconducting body, for example single crystalline n-gallium arsenide, which serves as an emitter in this example and on which is placed an ohmic contact 6, serving as an emitter connection.
- Two Schottky barriers can be distinguished. On the interface of bodies 1 and 2 (collector Schottky barrier)and on the interface of bodies 2 and 3 (emitter Schottky barrier).
- the electrical behaviour can roughly be explained by means of a common base configuration: Bias Ve provides injection of electrons from emitter 3 to base 2 via an emitter barrier which is fixed in forward. Bias Vc causes a reversely biased collector barrier.
- the electrons which are being injected from the emitter to the base gain an extra energy (comparable to the barrier height of the emitter Schottky barrier, of the order of 1 eV) and are therefore called hot electrons. These electrons can pass the collector barrier if this energy is larger that the barrier height of the collector barrier, in contrast to the electrons in the base region which are not injected and have an energy around the Fermi level.
- the injected electrons thus form a current in the collector: transistor operation.
- the size of this current is strongly dependent on the electron mean free path in the base: in case of a small mean free path a lot of electrons loose their energy in the base and can therefore not pass the collector barrier anymore, resulting in a small collector current.
- Ic Ie exp (-W/ ⁇ ), in which Ic is the collected current, Ie the injected current, ⁇ a transport factor, W the thickness of the base layer (of the order of 10 nm) and ⁇ the electron mean free path in the base.
- Magnetoresistive materials are characterised by the variation of the electron mean free path under influence of a magnetic field (mean free path is related to resistivity). Implementation of a magnetoresistant material of magnetoresistive structure in base region 2 results in a magnetic field dependent transfer of the transistor, and thus in a collector current which is a measure of an applied magnetic field.
- a second example of a possible arrangement of the first aspect of the invention is illustrated in the second figure.
- the emitter barrier is not formed by a Schottky barrier as in figure 1, but by a tunnel barrier.
- An insulator or semiconductor 7 is placed in this case between base 2 and emitter metal film 8.
- a third example of a possible arrangement of the first aspect of the invention is illustrated in the third figure.
- the collector barrier is not formed by a Schottky barrier as in figure 2, but by a tunnel barrier.
- An insulator or semiconductor 9 is in this case placed between the base region 2 and the collector metal film 10.
- the second aspect of the invention can be illustrated with figure 2, in which layers 8 and 2 consist at least of a (ferro)magnetic material, e.g. Co, Ni or Fe.
- a (ferro)magnetic tunnel barrier is formed, which may serve as an emitter barrier.
- the magnetic field dependent tunnel resistance and possible magnetic field dependent mean free path in the base 2 can be utilised to create a magnetic field dependent transfer of the transistor.
- the arrangement can be extended to a structure in which not only the emitter barrier is characterised by a (ferro)magnetic tunnel junction, but also the collector barrier. This can be elucidated by means of figure 3, in which layers 2, 8 and 10 should then at least consist of a (ferro)magnetic material.
- the third aspect of the invention aims at combining the first and the second aspect of the invention, resulting in metal base transistor structures in which both the magnetic tunnelling as the magnetoresistance are implemented.
- This can be illustrated by means of figures 2 and 3, where in this case the base region 2 consists of at least a magnetoresistive material or magnetoresistive structure.
- Layers 8 and 10 are then (ferro)magnetic materials or structures.
- the fourth aspect of the invention can be illustrated by means of the schematic drawings in figure 4.
- Layer 11 is a semiconducting body with on it deposited a layer 12 consisting of at least a magnetoresistive material or magnetoresistive structure.
- Connection 13 and 14 are connected to a voltage source which cause a reverse state of the (Schottky)barrier, formed by the interface of layers 11 and 12.
- Photo-excitation (referred to as "hv") of electrons on the surface of body 12 causes an increased leak current of the reverse biased Schottky barrier.
- Variation of the resistivity and thus the mean free path of the electrons in layers 12 influenced by a magnetic field causes a change in the leak current of the Schottky barrier, causing the leak current to be a measure for the applied magnetic field.
- a magnetic field sensor can be realised, and in case of the application of a magnetic multilayer or sandwich characterised by the giant magnetoresistance effect, the perpendicular electron transport through such structures can be measured and employed.
- the fourth aspect of the invention relating to the method of manufacturing of hot electron transistor structures, including metal base transistor and structures based on these, and which is base on the technique known as (direct) bonding, can be illustrated as an example by means of a semiconductor / metal or metallic structure / semiconductor structure as in figure 1.
- Semiconducting bodies 1 and 3 have to be provided of a flat and optically smooth surface and need to be clean prior to the deposition of at least the metal or metallic structure 2 on at least on of said semiconducting bodies. If the metal or metallic structure is placed on only body 1, then body 3 can be contacted to body 2 in a dust-arm atmosphere, after cleaning and possible removal of an oxide layer to get a better electrical connection. A spontaneous bonding will take place, known by the name (direct) bonding.
- the formed body 3 / body 2 interface turns out to show good Schottky barrier characteristics. By subjecting it to an elevated temperature, the adhering effect is even increased and the electrical properties can be improved.
- the bonding technique can also take place by depositing a part of body 2 on body 3 and another part of body 2 on body 1, after which bodies 1 and 3, both with a part of body 2, are being brought together and contacted, after which spontaneous bonding sets in between both parts of body 2.
- Base region 2 can for example consist of a single metal such as Au, Ag, Pt or Al, a magnetoresistive material or magnetoresistive structure such as a NiFe film or a Co/Cu or Fe/Cr multilayers, a superconducting material such as Nb or a copper oxide such as YBaCuO, or a material with a long free electron mean free path such as for example Bi.
- the contacting of both bodies can also take place in an atmosphere with low pressure, for example a vacuum chamber of a sputtering or evaporation system, during or after deposition of body 2, amongst others to prevent forming of oxides on the contacting parts.
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Abstract
L'invention concerne une structure conductrice de courant avec au moins une barrière de potentiel, par exemple un transistor ou une diode, comprenant une région dans laquelle peut avoir lieu un transport d'électrons. Cette structure est caractérisée par le fait que la région en question est constituée au moins d'une substance choisie dans un groupe comprenant des métaux tels que Au, Ag, Pt et Al, des semi-métaux tels que Bi, des matériaux supraconducteurs tels que Nb ou les oxydes de cuivre, et également des substances et/ou structures magnéto-résistives. L'invention concerne également un procédé pour fabriquer une telle structure. Ce procédé est caractérisé par le fait que les corps qui doivent venir en contact ont au moins une surface plate et optiquement lisse, et qu'ils sont amenés en contact mutuel dans une atmosphère exempte de poussière, pour obtenir une connexion électrique et une liaison mécaniques permanentes, grâce à une adhésion spontanée.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL9401410 | 1994-08-31 | ||
| NL9401410 | 1994-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1996007208A1 true WO1996007208A1 (fr) | 1996-03-07 |
Family
ID=19864590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/NL1995/000036 WO1996007208A1 (fr) | 1994-08-31 | 1995-01-25 | Structure conductrice de courant avec au moins une barriere de potentiel, et procede de fabrication de cette structure |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1996007208A1 (fr) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998014793A1 (fr) * | 1996-10-02 | 1998-04-09 | Siemens Aktiengesellschaft | Detecteur a couche mince sensible au champ magnetique, presentant une couche barriere a effet tunnel |
| DE10031401A1 (de) * | 2000-07-03 | 2002-02-07 | Forschungszentrum Juelich Gmbh | Dreitorbauelement, insbesondere Spininjektionstransistor |
| US6480365B1 (en) | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
| DE10217593C1 (de) * | 2002-04-19 | 2003-10-16 | Siemens Ag | Schaltungsteil mit mindestens zwei magnetoresistiven Schichtelementen mit invertierten Ausgangssignalen |
| DE10217598C1 (de) * | 2002-04-19 | 2003-10-16 | Siemens Ag | Schaltungseinrichtung mit mindestens zwei invertierte Ausgangssignale erzeugenden magnetoresistiven Schaltungselementen |
| DE10017374B4 (de) * | 1999-05-25 | 2007-05-10 | Siemens Ag | Magnetische Koppeleinrichtung und deren Verwendung |
| US7259942B2 (en) | 2005-01-10 | 2007-08-21 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region |
| CN100433181C (zh) * | 2003-03-28 | 2008-11-12 | 株式会社东芝 | 磁存储器以及写该磁存储器的方法 |
| US7636223B2 (en) | 2005-01-10 | 2009-12-22 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure and a self-pinned layer structure |
| US7639459B2 (en) | 2005-01-10 | 2009-12-29 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure |
| US7710691B2 (en) | 2005-01-10 | 2010-05-04 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector region and a pinned layer structure in the emitter region |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0001374A1 (fr) * | 1977-09-26 | 1979-04-04 | International Business Machines Corporation | Transistor à films minces semi-conducteurs amorphes et à base métallique |
| EP0121271A1 (fr) * | 1983-02-17 | 1984-10-10 | Stichting Katholieke Universiteit | Dispositif électronique |
| EP0616484A1 (fr) * | 1993-03-19 | 1994-09-21 | Thomson-Csf | Transducteur magnétorésistif et procédé de réalisation |
-
1995
- 1995-01-25 WO PCT/NL1995/000036 patent/WO1996007208A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0001374A1 (fr) * | 1977-09-26 | 1979-04-04 | International Business Machines Corporation | Transistor à films minces semi-conducteurs amorphes et à base métallique |
| EP0121271A1 (fr) * | 1983-02-17 | 1984-10-10 | Stichting Katholieke Universiteit | Dispositif électronique |
| EP0616484A1 (fr) * | 1993-03-19 | 1994-09-21 | Thomson-Csf | Transducteur magnétorésistif et procédé de réalisation |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2333900A (en) * | 1996-10-02 | 1999-08-04 | Siemens Ag | Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer |
| GB2333900B (en) * | 1996-10-02 | 2001-07-11 | Siemens Ag | Magnetic-field sensitive thin film sensor having a tunnel effect barrier layer |
| WO1998014793A1 (fr) * | 1996-10-02 | 1998-04-09 | Siemens Aktiengesellschaft | Detecteur a couche mince sensible au champ magnetique, presentant une couche barriere a effet tunnel |
| DE10017374B4 (de) * | 1999-05-25 | 2007-05-10 | Siemens Ag | Magnetische Koppeleinrichtung und deren Verwendung |
| US6480365B1 (en) | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
| DE10031401A1 (de) * | 2000-07-03 | 2002-02-07 | Forschungszentrum Juelich Gmbh | Dreitorbauelement, insbesondere Spininjektionstransistor |
| DE10031401C2 (de) * | 2000-07-03 | 2002-05-29 | Forschungszentrum Juelich Gmbh | Dreitorbauelement, insbesondere Spininjektionstransistor |
| DE10217593C1 (de) * | 2002-04-19 | 2003-10-16 | Siemens Ag | Schaltungsteil mit mindestens zwei magnetoresistiven Schichtelementen mit invertierten Ausgangssignalen |
| DE10217598C1 (de) * | 2002-04-19 | 2003-10-16 | Siemens Ag | Schaltungseinrichtung mit mindestens zwei invertierte Ausgangssignale erzeugenden magnetoresistiven Schaltungselementen |
| CN100433181C (zh) * | 2003-03-28 | 2008-11-12 | 株式会社东芝 | 磁存储器以及写该磁存储器的方法 |
| US7259942B2 (en) | 2005-01-10 | 2007-08-21 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region |
| US7636223B2 (en) | 2005-01-10 | 2009-12-22 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure and a self-pinned layer structure |
| US7639459B2 (en) | 2005-01-10 | 2009-12-29 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure |
| US7710691B2 (en) | 2005-01-10 | 2010-05-04 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector region and a pinned layer structure in the emitter region |
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