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TW200606600A - Water soluble resin composition and method for pattern formation using the same - Google Patents

Water soluble resin composition and method for pattern formation using the same

Info

Publication number
TW200606600A
TW200606600A TW094111096A TW94111096A TW200606600A TW 200606600 A TW200606600 A TW 200606600A TW 094111096 A TW094111096 A TW 094111096A TW 94111096 A TW94111096 A TW 94111096A TW 200606600 A TW200606600 A TW 200606600A
Authority
TW
Taiwan
Prior art keywords
resin composition
pattern
soluble resin
water
resist pattern
Prior art date
Application number
TW094111096A
Other languages
English (en)
Other versions
TWI374342B (en
Inventor
Takeshi Nishibe
Sung-Eun Hong
Yusuke Takano
Tetsuo Okayasu
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Publication of TW200606600A publication Critical patent/TW200606600A/zh
Application granted granted Critical
Publication of TWI374342B publication Critical patent/TWI374342B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/11Vinyl alcohol polymer or derivative
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/162Protective or antiabrasion layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/165Thermal imaging composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094111096A 2004-04-09 2005-04-08 Water soluble resin composition and method for pattern formation using the same TWI374342B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004115872A JP4485241B2 (ja) 2004-04-09 2004-04-09 水溶性樹脂組成物およびそれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
TW200606600A true TW200606600A (en) 2006-02-16
TWI374342B TWI374342B (en) 2012-10-11

Family

ID=35125237

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111096A TWI374342B (en) 2004-04-09 2005-04-08 Water soluble resin composition and method for pattern formation using the same

Country Status (7)

Country Link
US (1) US7745093B2 (zh)
EP (1) EP1757989A4 (zh)
JP (1) JP4485241B2 (zh)
KR (1) KR101159051B1 (zh)
CN (1) CN100538531C (zh)
TW (1) TWI374342B (zh)
WO (1) WO2005098545A1 (zh)

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JP4012480B2 (ja) * 2003-03-28 2007-11-21 Azエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
WO2005008340A1 (ja) 2003-07-17 2005-01-27 Az Electronic Materials (Japan) K.K. 微細パターン形成材料およびそれを用いた微細パターン形成方法
JP2006064851A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR101250190B1 (ko) 2006-01-16 2013-04-05 영창케미칼 주식회사 포토레지스트 패턴 축소용 수용성 중합체, 상기 수용성중합체를 포함하는 포토레지스트 패턴 축소용 조성물 및 상기 조성물을 이용한 미세패턴 형성 방법
JP4801477B2 (ja) * 2006-03-24 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法
JP5138916B2 (ja) 2006-09-28 2013-02-06 東京応化工業株式会社 パターン形成方法
JP5000260B2 (ja) 2006-10-19 2012-08-15 AzエレクトロニックマテリアルズIp株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 AzエレクトロニックマテリアルズIp株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US8298744B2 (en) * 2007-05-18 2012-10-30 Samsung Electronics Co., Ltd. Coating material for photoresist pattern and method of forming fine pattern using the same
US8211624B2 (en) * 2007-05-23 2012-07-03 Jsr Corporation Method for pattern formation and resin composition for use in the method
KR101426321B1 (ko) * 2007-07-11 2014-08-06 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 미세 패턴 형성용 조성물 및 이것을 사용한 미세 패턴 형성 방법
TWI452419B (zh) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
US8039195B2 (en) 2008-02-08 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Si device making method by using a novel material for packing and unpacking process
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5306755B2 (ja) * 2008-09-16 2013-10-02 AzエレクトロニックマテリアルズIp株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP2010128464A (ja) * 2008-12-01 2010-06-10 Az Electronic Materials Kk レジストパターン形成方法
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
TWI403520B (zh) * 2009-05-25 2013-08-01 Shinetsu Chemical Co 光阻改質用組成物及圖案形成方法
KR101311446B1 (ko) * 2011-01-21 2013-09-25 금호석유화학 주식회사 수용성 수지 조성물 및 이를 이용하여 미세패턴을 형성하는 방법
JP5758263B2 (ja) 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
KR102028109B1 (ko) * 2011-12-23 2019-11-15 금호석유화학 주식회사 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법
US8968586B2 (en) * 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
CN102760696A (zh) * 2012-07-27 2012-10-31 上海华力微电子有限公司 通孔优先铜互连制作方法
CN102810511A (zh) * 2012-09-11 2012-12-05 上海华力微电子有限公司 一种铜互联线的制作方法
JP6075724B2 (ja) 2012-10-01 2017-02-08 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP5673784B2 (ja) * 2013-02-21 2015-02-18 Jsr株式会社 感光性組成物、硬化膜およびその製造方法ならびに電子部品
JP6239833B2 (ja) 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6157151B2 (ja) 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6180212B2 (ja) * 2013-07-12 2017-08-16 東京応化工業株式会社 パターン微細化用被覆剤
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
JP2017165846A (ja) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
US11156920B2 (en) 2016-11-25 2021-10-26 Merck Patent Gmbh Lithography composition, a method for forming resist patterns and a method for making semiconductor devices
TWI614573B (zh) * 2016-12-30 2018-02-11 臻鼎科技股份有限公司 水溶性感光樹脂組合物及覆蓋膜

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Also Published As

Publication number Publication date
JP4485241B2 (ja) 2010-06-16
US7745093B2 (en) 2010-06-29
JP2005300853A (ja) 2005-10-27
KR20070007334A (ko) 2007-01-15
CN100538531C (zh) 2009-09-09
CN1947068A (zh) 2007-04-11
WO2005098545A1 (ja) 2005-10-20
EP1757989A4 (en) 2009-12-16
US20080193880A1 (en) 2008-08-14
KR101159051B1 (ko) 2012-06-22
TWI374342B (en) 2012-10-11
EP1757989A1 (en) 2007-02-28

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