TW200606600A - Water soluble resin composition and method for pattern formation using the same - Google Patents
Water soluble resin composition and method for pattern formation using the sameInfo
- Publication number
- TW200606600A TW200606600A TW094111096A TW94111096A TW200606600A TW 200606600 A TW200606600 A TW 200606600A TW 094111096 A TW094111096 A TW 094111096A TW 94111096 A TW94111096 A TW 94111096A TW 200606600 A TW200606600 A TW 200606600A
- Authority
- TW
- Taiwan
- Prior art keywords
- resin composition
- pattern
- soluble resin
- water
- resist pattern
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000011342 resin composition Substances 0.000 title abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title abstract 2
- 230000007261 regionalization Effects 0.000 title 1
- 239000002253 acid Substances 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000003431 cross linking reagent Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/162—Protective or antiabrasion layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/165—Thermal imaging composition
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004115872A JP4485241B2 (ja) | 2004-04-09 | 2004-04-09 | 水溶性樹脂組成物およびそれを用いたパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200606600A true TW200606600A (en) | 2006-02-16 |
TWI374342B TWI374342B (en) | 2012-10-11 |
Family
ID=35125237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094111096A TWI374342B (en) | 2004-04-09 | 2005-04-08 | Water soluble resin composition and method for pattern formation using the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US7745093B2 (zh) |
EP (1) | EP1757989A4 (zh) |
JP (1) | JP4485241B2 (zh) |
KR (1) | KR101159051B1 (zh) |
CN (1) | CN100538531C (zh) |
TW (1) | TWI374342B (zh) |
WO (1) | WO2005098545A1 (zh) |
Families Citing this family (35)
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---|---|---|---|---|
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
WO2005008340A1 (ja) | 2003-07-17 | 2005-01-27 | Az Electronic Materials (Japan) K.K. | 微細パターン形成材料およびそれを用いた微細パターン形成方法 |
JP2006064851A (ja) * | 2004-08-25 | 2006-03-09 | Renesas Technology Corp | 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置 |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR101250190B1 (ko) | 2006-01-16 | 2013-04-05 | 영창케미칼 주식회사 | 포토레지스트 패턴 축소용 수용성 중합체, 상기 수용성중합체를 포함하는 포토레지스트 패턴 축소용 조성물 및 상기 조성물을 이용한 미세패턴 형성 방법 |
JP4801477B2 (ja) * | 2006-03-24 | 2011-10-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP5138916B2 (ja) | 2006-09-28 | 2013-02-06 | 東京応化工業株式会社 | パターン形成方法 |
JP5000260B2 (ja) | 2006-10-19 | 2012-08-15 | AzエレクトロニックマテリアルズIp株式会社 | 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
US8298744B2 (en) * | 2007-05-18 | 2012-10-30 | Samsung Electronics Co., Ltd. | Coating material for photoresist pattern and method of forming fine pattern using the same |
US8211624B2 (en) * | 2007-05-23 | 2012-07-03 | Jsr Corporation | Method for pattern formation and resin composition for use in the method |
KR101426321B1 (ko) * | 2007-07-11 | 2014-08-06 | 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 | 미세 패턴 형성용 조성물 및 이것을 사용한 미세 패턴 형성 방법 |
TWI452419B (zh) * | 2008-01-28 | 2014-09-11 | Az Electronic Mat Ip Japan Kk | 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法 |
US8039195B2 (en) | 2008-02-08 | 2011-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Si device making method by using a novel material for packing and unpacking process |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP5306755B2 (ja) * | 2008-09-16 | 2013-10-02 | AzエレクトロニックマテリアルズIp株式会社 | 基板処理液およびそれを用いたレジスト基板処理方法 |
JP2010128464A (ja) * | 2008-12-01 | 2010-06-10 | Az Electronic Materials Kk | レジストパターン形成方法 |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
TWI403520B (zh) * | 2009-05-25 | 2013-08-01 | Shinetsu Chemical Co | 光阻改質用組成物及圖案形成方法 |
KR101311446B1 (ko) * | 2011-01-21 | 2013-09-25 | 금호석유화학 주식회사 | 수용성 수지 조성물 및 이를 이용하여 미세패턴을 형성하는 방법 |
JP5758263B2 (ja) | 2011-10-11 | 2015-08-05 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
KR102028109B1 (ko) * | 2011-12-23 | 2019-11-15 | 금호석유화학 주식회사 | 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법 |
US8968586B2 (en) * | 2012-02-15 | 2015-03-03 | Jsr Corporation | Pattern-forming method |
CN102760696A (zh) * | 2012-07-27 | 2012-10-31 | 上海华力微电子有限公司 | 通孔优先铜互连制作方法 |
CN102810511A (zh) * | 2012-09-11 | 2012-12-05 | 上海华力微电子有限公司 | 一种铜互联线的制作方法 |
JP6075724B2 (ja) | 2012-10-01 | 2017-02-08 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
JP5673784B2 (ja) * | 2013-02-21 | 2015-02-18 | Jsr株式会社 | 感光性組成物、硬化膜およびその製造方法ならびに電子部品 |
JP6239833B2 (ja) | 2013-02-26 | 2017-11-29 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
JP6157151B2 (ja) | 2013-03-05 | 2017-07-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
JP6180212B2 (ja) * | 2013-07-12 | 2017-08-16 | 東京応化工業株式会社 | パターン微細化用被覆剤 |
TWI592760B (zh) * | 2014-12-30 | 2017-07-21 | 羅門哈斯電子材料韓國有限公司 | 與經外塗佈之光致抗蝕劑一起使用之塗層組合物 |
JP2017165846A (ja) * | 2016-03-15 | 2017-09-21 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細パターン形成用組成物およびそれを用いた微細パターン形成方法 |
US11156920B2 (en) | 2016-11-25 | 2021-10-26 | Merck Patent Gmbh | Lithography composition, a method for forming resist patterns and a method for making semiconductor devices |
TWI614573B (zh) * | 2016-12-30 | 2018-02-11 | 臻鼎科技股份有限公司 | 水溶性感光樹脂組合物及覆蓋膜 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3057879B2 (ja) | 1992-02-28 | 2000-07-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
JP3340493B2 (ja) | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
JP3071401B2 (ja) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
US5919601A (en) * | 1996-11-12 | 1999-07-06 | Kodak Polychrome Graphics, Llc | Radiation-sensitive compositions and printing plates |
JP3950584B2 (ja) | 1999-06-29 | 2007-08-01 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物 |
ES2173774B1 (es) * | 1999-07-27 | 2003-06-16 | Breat Sl | Procedimiento para la fabricacion de panales para apicultura y correspondiente aparato. |
JP2001228616A (ja) | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 微細パターン形成材料及びこれを用いた半導体装置の製造方法 |
US20030008968A1 (en) * | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
JP3628010B2 (ja) | 2001-07-05 | 2005-03-09 | 東京応化工業株式会社 | レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法 |
JP4316222B2 (ja) | 2001-11-27 | 2009-08-19 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
US20030102285A1 (en) * | 2001-11-27 | 2003-06-05 | Koji Nozaki | Resist pattern thickening material, resist pattern and forming method thereof, and semiconductor device and manufacturing method thereof |
JP2004058561A (ja) * | 2002-07-31 | 2004-02-26 | Fuji Photo Film Co Ltd | インクジェット記録用シート |
JP3850772B2 (ja) * | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
-
2004
- 2004-04-09 JP JP2004115872A patent/JP4485241B2/ja not_active Expired - Lifetime
-
2005
- 2005-04-08 US US11/547,707 patent/US7745093B2/en not_active Expired - Fee Related
- 2005-04-08 TW TW094111096A patent/TWI374342B/zh not_active IP Right Cessation
- 2005-04-08 KR KR1020067020970A patent/KR101159051B1/ko not_active Expired - Lifetime
- 2005-04-08 WO PCT/JP2005/006961 patent/WO2005098545A1/ja active Application Filing
- 2005-04-08 CN CNB2005800122012A patent/CN100538531C/zh not_active Expired - Fee Related
- 2005-04-08 EP EP05728791A patent/EP1757989A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP4485241B2 (ja) | 2010-06-16 |
US7745093B2 (en) | 2010-06-29 |
JP2005300853A (ja) | 2005-10-27 |
KR20070007334A (ko) | 2007-01-15 |
CN100538531C (zh) | 2009-09-09 |
CN1947068A (zh) | 2007-04-11 |
WO2005098545A1 (ja) | 2005-10-20 |
EP1757989A4 (en) | 2009-12-16 |
US20080193880A1 (en) | 2008-08-14 |
KR101159051B1 (ko) | 2012-06-22 |
TWI374342B (en) | 2012-10-11 |
EP1757989A1 (en) | 2007-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |