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WO2009078207A1 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
WO2009078207A1
WO2009078207A1 PCT/JP2008/066448 JP2008066448W WO2009078207A1 WO 2009078207 A1 WO2009078207 A1 WO 2009078207A1 JP 2008066448 W JP2008066448 W JP 2008066448W WO 2009078207 A1 WO2009078207 A1 WO 2009078207A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
uncrosslinking
embedded part
crosslinking
pattern formation
Prior art date
Application number
PCT/JP2008/066448
Other languages
English (en)
French (fr)
Inventor
Keiji Konno
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009546173A priority Critical patent/JP5051240B2/ja
Priority to KR1020107015457A priority patent/KR101384814B1/ko
Publication of WO2009078207A1 publication Critical patent/WO2009078207A1/ja
Priority to US12/814,476 priority patent/US8263315B2/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C08F12/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　(１)レジスト層を選択的に露光した後、現像して第一のパターンを形成する工程と、(２)隣接する第一のパターンどうしの間に、シリコン原子を含まない樹脂成分および溶媒を含有するとともに、酸発生剤から発生する酸の作用により架橋可能なパターン形成用樹脂組成物からなる未架橋埋め込み部を形成する工程と、(３)未架橋埋め込み部の所定領域を架橋させて、第一のパターン、第一の架橋部、未架橋埋め込み部、および第二の架橋部がこの順で配列して繰り返す配列構造を形成する工程と、(４)第一のパターンおよび未架橋埋め込み部を除去して第二のパターンを形成する工程とを含むパターン形成方法である。
PCT/JP2008/066448 2007-12-14 2008-09-11 パターン形成方法 WO2009078207A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009546173A JP5051240B2 (ja) 2007-12-14 2008-09-11 パターン形成方法
KR1020107015457A KR101384814B1 (ko) 2007-12-14 2008-09-11 패턴 형성 방법
US12/814,476 US8263315B2 (en) 2007-12-14 2010-06-13 Pattern-forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007323349 2007-12-14
JP2007-323349 2007-12-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/814,476 Continuation US8263315B2 (en) 2007-12-14 2010-06-13 Pattern-forming method

Publications (1)

Publication Number Publication Date
WO2009078207A1 true WO2009078207A1 (ja) 2009-06-25

Family

ID=40795326

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066448 WO2009078207A1 (ja) 2007-12-14 2008-09-11 パターン形成方法

Country Status (5)

Country Link
US (1) US8263315B2 (ja)
JP (1) JP5051240B2 (ja)
KR (1) KR101384814B1 (ja)
TW (1) TWI444771B (ja)
WO (1) WO2009078207A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218556A (ja) * 2008-03-12 2009-09-24 Taiwan Semiconductor Manufacturing Co Ltd リソグラフィパターンの形成方法
US7935477B2 (en) 2007-11-30 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench
JP2014153665A (ja) * 2013-02-13 2014-08-25 Toshiba Corp マスク形成用材料および半導体装置の製造方法
JP2016071345A (ja) * 2014-09-26 2016-05-09 東京応化工業株式会社 レジストパターン形成方法、レジストパターンスプリット剤、スプリットパターン改善化剤及びレジストパターンスプリット材料
JP2017068254A (ja) * 2015-09-28 2017-04-06 東京応化工業株式会社 レジストパターン形成方法及びシュリンク剤組成物
JP2017107100A (ja) * 2015-12-10 2017-06-15 東京応化工業株式会社 レジストパターン形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5844613B2 (ja) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性コポリマーおよびフォトレジスト組成物
US8968586B2 (en) * 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
KR102366801B1 (ko) 2015-03-31 2022-02-25 삼성전자주식회사 반도체 소자의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130631A (ja) * 1993-11-05 1995-05-19 Sanyo Electric Co Ltd パターン形成方法及びそれを利用した半導体記憶装置の製造方法
JP2003077922A (ja) * 2001-09-05 2003-03-14 Tdk Corp 薄膜パターンの作製方法、及び、それを用いたマイクロデバイスの製造方法
JP2005129761A (ja) * 2003-10-24 2005-05-19 Toshiba Corp ホールパターン形成方法及び半導体装置の製造方法
JP2007293294A (ja) * 2006-03-27 2007-11-08 Jsr Corp 微細パターン形成方法および重合体
WO2007142209A1 (ja) * 2006-06-06 2007-12-13 Jsr Corporation パターン形成方法および高炭素含有樹脂組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2937248B2 (ja) 1992-02-18 1999-08-23 日本電信電話株式会社 ポジ型レジスト材料
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP4004014B2 (ja) 2000-03-28 2007-11-07 株式会社東芝 レジストパターンの形成方法
JP3848070B2 (ja) 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
JP3852107B2 (ja) 2000-11-14 2006-11-29 Ｊｓｒ株式会社 反射防止膜形成組成物
JP2004335873A (ja) 2003-05-09 2004-11-25 Toshiba Corp パターン形成方法
JP4150660B2 (ja) * 2003-12-16 2008-09-17 松下電器産業株式会社 パターン形成方法
KR100753386B1 (ko) * 2005-09-01 2007-08-30 도오꾜오까고오교 가부시끼가이샤 화학 증폭형 포토레지스트 조성물, 포토레지스트층 적층체,포토레지스트 조성물 제조방법, 포토레지스트 패턴의제조방법 및 접속단자의 제조방법
JP4427562B2 (ja) * 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130631A (ja) * 1993-11-05 1995-05-19 Sanyo Electric Co Ltd パターン形成方法及びそれを利用した半導体記憶装置の製造方法
JP2003077922A (ja) * 2001-09-05 2003-03-14 Tdk Corp 薄膜パターンの作製方法、及び、それを用いたマイクロデバイスの製造方法
JP2005129761A (ja) * 2003-10-24 2005-05-19 Toshiba Corp ホールパターン形成方法及び半導体装置の製造方法
JP2007293294A (ja) * 2006-03-27 2007-11-08 Jsr Corp 微細パターン形成方法および重合体
WO2007142209A1 (ja) * 2006-06-06 2007-12-13 Jsr Corporation パターン形成方法および高炭素含有樹脂組成物

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7935477B2 (en) 2007-11-30 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench
JP2009218556A (ja) * 2008-03-12 2009-09-24 Taiwan Semiconductor Manufacturing Co Ltd リソグラフィパターンの形成方法
US8048616B2 (en) 2008-03-12 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
JP2014153665A (ja) * 2013-02-13 2014-08-25 Toshiba Corp マスク形成用材料および半導体装置の製造方法
JP2016071345A (ja) * 2014-09-26 2016-05-09 東京応化工業株式会社 レジストパターン形成方法、レジストパターンスプリット剤、スプリットパターン改善化剤及びレジストパターンスプリット材料
JP2017068254A (ja) * 2015-09-28 2017-04-06 東京応化工業株式会社 レジストパターン形成方法及びシュリンク剤組成物
JP2017107100A (ja) * 2015-12-10 2017-06-15 東京応化工業株式会社 レジストパターン形成方法
KR20170069148A (ko) * 2015-12-10 2017-06-20 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법
US10503068B2 (en) 2015-12-10 2019-12-10 Tokyo Ohka Kogyo Co., Ltd. Method for forming resist pattern
KR102732179B1 (ko) * 2015-12-10 2024-11-19 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법

Also Published As

Publication number Publication date
TWI444771B (zh) 2014-07-11
US20100248167A1 (en) 2010-09-30
US8263315B2 (en) 2012-09-11
JP5051240B2 (ja) 2012-10-17
KR20100098692A (ko) 2010-09-08
JPWO2009078207A1 (ja) 2011-04-28
KR101384814B1 (ko) 2014-04-14
TW200928588A (en) 2009-07-01

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