RU2818689C1 - Semiconductor device manufacturing method - Google Patents

Abstract

FIELD: various technological processes.

SUBSTANCE: invention relates to production of semiconductor devices. Method according to invention is implemented as follows: drain and source areas, gate electrode, titanium nitride barrier layer, wherein the titanium nitride TiN barrier layer is formed by high-frequency spraying at a power input of 1 kW and a nitrogen pressure of 10 Pa at an application rate of 10 nm/min, with thickness of 150 nm, with subsequent annealing in a nitrogen atmosphere at temperature of 600 °C for 10 minutes.

EFFECT: invention ensures reduction of leakage current values, improvement of manufacturability, improvement of parameters of devices, improvement of quality and increase in percentage yield.

1 cl, 1 tbl

Description

The invention relates to the field of technology for the production of semiconductor devices, in particular to the technology for the production of field-effect transistors with a reduced leakage current.

There is a known method of manufacturing a field-effect transistor [Pat. 5134452 USA, MKI H01L 29/78] with an insulating gate, in which a layer of conductive polysilicon is deposited on a thick protective oxide layer and on the open silicon surface with source and drain regions, from which drain and source electrodes are then formed. After opening the channel area, reactive ion etching is carried out to form a rough surface with irregularities up to 50 nm in size. A thin gate oxide is then created over the channel region using PPCO and a gate is formed. In such devices, due to the rough surface, the defectiveness of the structure increases and the electrical parameters of the devices deteriorate.

There is a known method for manufacturing a semiconductor device [Pat. 5309025 USA, MKI H01L 23/29] by forming contacts for semiconductor crystals with increased peel strength. For this purpose, a matrix of metallization islands is created on the site, for example, in the form of rectangular sites, in which the lower barrier layer is formed by TiN, and the upper conductive layer is Al, Ti or W. Then a second conductive layer of Al is applied to the entire contact area.

The disadvantages of this method are: high leakage current values; low technology; increased density of defects.

The problem solved by the invention: reducing leakage current values, ensuring manufacturability, improving device parameters, improving quality and increasing the percentage of yield.

The problem is solved by forming a TiN layer 150 nm thick by RF sputtering at an input power of 1 kW and a nitrogen pressure of 10 Pa, with a deposition rate of 10 nm/min, followed by annealing in a nitrogen atmosphere at a temperature of 600°C for 10 min.

Semiconductor devices were manufactured and studied using the proposed method. The processing results are presented in the table.

Experimental studies have shown that the yield of suitable structures for batches of wafers formed in the optimal mode increased by 17.3%.

Technical result: reducing leakage current values, ensuring manufacturability, improving device parameters, improving quality and increasing the percentage of yield.

The stability of parameters throughout the entire operating temperature range was normal and met the requirements.

The proposed method for manufacturing a semiconductor device by forming a TiN layer 150 nm thick by RF sputtering at an input power of 1 kW and a nitrogen pressure of 10 Pa, with a deposition rate of 10 nm/min, followed by annealing in a nitrogen atmosphere at a temperature of 600°C for 10 min. allows you to increase the yield of suitable devices and improve their reliability.

Claims (1)

A method for manufacturing a semiconductor device, including ion implantation processes, the formation of a drain and source region, a gate electrode, a barrier layer of titanium nitride, characterized in that the barrier layer of titanium nitride TiN is formed by RF sputtering at an input power of 1 kW and a nitrogen pressure of 10 Pa with deposition speed 10 nm/min, thickness 150 nm, followed by annealing in a nitrogen atmosphere at a temperature of 600°C for 10 minutes.