+

AU2001266131A1 - Preparation method of a coating of gallium nitride - Google Patents

Preparation method of a coating of gallium nitride

Info

Publication number
AU2001266131A1
AU2001266131A1 AU2001266131A AU6613101A AU2001266131A1 AU 2001266131 A1 AU2001266131 A1 AU 2001266131A1 AU 2001266131 A AU2001266131 A AU 2001266131A AU 6613101 A AU6613101 A AU 6613101A AU 2001266131 A1 AU2001266131 A1 AU 2001266131A1
Authority
AU
Australia
Prior art keywords
coating
preparation
gallium nitride
gallium
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001266131A
Other languages
English (en)
Inventor
Nicolas Pierre Grandjean
Jean Claude Massies
Fabrice Semond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001266131A1 publication Critical patent/AU2001266131A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
AU2001266131A 2000-06-09 2001-06-08 Preparation method of a coating of gallium nitride Abandoned AU2001266131A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0007417 2000-06-09
FR0007417A FR2810159B1 (fr) 2000-06-09 2000-06-09 Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
PCT/FR2001/001777 WO2001095380A1 (fr) 2000-06-09 2001-06-08 Procede de preparation d'une couche de nitrure de gallium

Publications (1)

Publication Number Publication Date
AU2001266131A1 true AU2001266131A1 (en) 2001-12-17

Family

ID=8851146

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001266131A Abandoned AU2001266131A1 (en) 2000-06-09 2001-06-08 Preparation method of a coating of gallium nitride

Country Status (9)

Country Link
US (3) US7273664B2 (fr)
EP (1) EP1290721B1 (fr)
JP (1) JP5378634B2 (fr)
KR (1) KR100897589B1 (fr)
CN (2) CN100380588C (fr)
AU (1) AU2001266131A1 (fr)
CA (1) CA2411606C (fr)
FR (1) FR2810159B1 (fr)
WO (1) WO2001095380A1 (fr)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
JP5095064B2 (ja) 2000-08-04 2012-12-12 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
WO2003054921A2 (fr) * 2001-12-21 2003-07-03 Aixtron Ag Procede de production de composants laser iii-v
EP1459362A2 (fr) 2001-12-21 2004-09-22 Aixtron AG Procede de deposition de couches de semi-conducteurs iii-v sur un substrat non iii-v
US7229405B2 (en) 2002-11-15 2007-06-12 Paracor Medical, Inc. Cardiac harness delivery device and method of use
DE10256911B4 (de) * 2002-11-30 2008-02-07 Azzurro Semiconductors Ag Gruppe-III-Nitrid Transistorbauelement auf Siliziumsubstrat
EP1617464A4 (fr) * 2003-03-19 2011-04-27 Japan Science & Tech Agency Procede permettant de faire croitre du cristal semi-conducteur
US7261777B2 (en) 2003-06-06 2007-08-28 S.O.I.Tec Silicon On Insulator Technologies Method for fabricating an epitaxial substrate
EP1484794A1 (fr) 2003-06-06 2004-12-08 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé de fabrication d'un substrat auto-porté
WO2005060007A1 (fr) * 2003-08-05 2005-06-30 Nitronex Corporation Transistors a base de nitrure de gallium et procedes associes
CN100490190C (zh) * 2003-10-14 2009-05-20 昭和电工株式会社 Ⅲ族氮化物半导体器件
JP2005136200A (ja) * 2003-10-30 2005-05-26 Univ Nagoya 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材
JP4525894B2 (ja) * 2003-11-21 2010-08-18 サンケン電気株式会社 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
CN1314081C (zh) * 2004-02-04 2007-05-02 中国科学院半导体研究所 在硅衬底上生长无裂纹三族氮化物薄膜的方法
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
DE102004038573A1 (de) * 2004-08-06 2006-03-16 Azzurro Semiconductors Ag Verfahren zum epitaktischen Wachstum dicker, rissfreier Gruppe-III-Nitrid Halbleiterschichten mittels metallorganischer Gasphasenepitaxie auf Si oder SIC
JP2008519441A (ja) * 2004-10-28 2008-06-05 ニトロネックス コーポレイション 窒化ガリウム材料を用いるモノリシックマイクロ波集積回路
FR2877491B1 (fr) * 2004-10-29 2007-01-19 Soitec Silicon On Insulator Structure composite a forte dissipation thermique
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
FR2888664B1 (fr) 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
US20070202360A1 (en) * 2005-10-04 2007-08-30 Nitronex Corporation Gallium nitride material transistors and methods for wideband applications
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
WO2007064689A1 (fr) 2005-12-02 2007-06-07 Nitronex Corporation Dispositifs en matériaux au nitrure de gallium et procédés associés
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
WO2007096405A1 (fr) * 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Composant semi-conducteur au nitrure et son procédé de production
FR2898434B1 (fr) 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
WO2008021451A2 (fr) * 2006-08-14 2008-02-21 Aktiv-Dry Llc Inhalateur à poudre sèche actionné par l'homme et compositions à inhaler sous forme de poudre sèche
FR2912552B1 (fr) * 2007-02-14 2009-05-22 Soitec Silicon On Insulator Structure multicouche et son procede de fabrication.
CN103173864A (zh) * 2007-07-13 2013-06-26 日本碍子株式会社 Iii族氮化物单晶的制造方法
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
EP2031641B1 (fr) * 2007-08-31 2012-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composant semi-conducteur et son utilisation
JP2009158954A (ja) * 2007-12-07 2009-07-16 Rohm Co Ltd 窒化物半導体素子及びその製造方法
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
FR2929445B1 (fr) * 2008-03-25 2010-05-21 Picogiga Internat Procede de fabrication d'une couche de nitrure de gallium ou de nitrure de gallium et d'aluminium
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
FR2953328B1 (fr) 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
RU2468128C1 (ru) * 2011-06-15 2012-11-27 Общество с ограниченной ответственностью "Комплектующие и Материалы" (ООО "КИМ") СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛА AlN И УСТРОЙСТВО ДЛЯ ЕГО РЕАЛИЗАЦИИ
FR2977260B1 (fr) 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
EP2541589B1 (fr) 2011-06-30 2013-08-28 Siltronic AG Substrat semi-conducteur stratifié et son procédé de fabrication
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
EP2908330B1 (fr) * 2012-10-12 2021-05-19 Sumitomo Electric Industries, Ltd. Substrat composite à nitrure du groupe iii, procédé pour sa fabrication et procédé de fabrication d'un dispositif semi-conducteur à nitrure du groupe iii
KR101901932B1 (ko) * 2012-11-02 2018-09-27 엘지전자 주식회사 이종 기판, 질화물 반도체 발광 소자 및 그 제조 방법
US9099381B2 (en) * 2012-11-15 2015-08-04 International Business Machines Corporation Selective gallium nitride regrowth on (100) silicon
JP5944301B2 (ja) * 2012-11-19 2016-07-05 株式会社東芝 半導体発光素子の製造方法
JP5844753B2 (ja) * 2013-01-18 2016-01-20 日本電信電話株式会社 窒化物半導体成長用基板およびその製造方法
US8823025B1 (en) * 2013-02-20 2014-09-02 Translucent, Inc. III-N material grown on AIO/AIN buffer on Si substrate
KR20140133085A (ko) 2013-05-09 2014-11-19 엘지이노텍 주식회사 반도체 소자 및 그의 제조 방법
KR102145205B1 (ko) 2014-04-25 2020-08-19 삼성전자주식회사 반도체 소자 제조방법 및 증착 장치의 유지보수방법
JP2016164108A (ja) * 2015-03-06 2016-09-08 住友化学株式会社 窒化物半導体積層体の製造方法及び窒化物半導体積層体
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
FR3041470B1 (fr) 2015-09-17 2017-11-17 Commissariat Energie Atomique Structure semi-conductrice a tenue en tension amelioree
CN106684139B (zh) * 2015-11-11 2020-02-04 中国科学院苏州纳米技术与纳米仿生研究所 基于Si衬底的GaN外延结构及其制备方法
FR3049762B1 (fr) 2016-04-05 2022-07-29 Exagan Structure semi-conductrice a base de materiau iii-n
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
CN111607825A (zh) * 2020-06-02 2020-09-01 无锡吴越半导体有限公司 衬底、基于所述衬底的自支撑GaN单晶及其制备方法
WO2022141190A1 (fr) 2020-12-30 2022-07-07 Innoscience (suzhou) Semiconductor Co., Ltd. Couches épitaxiales à teneur en aluminium discontinue pour semi-conducteur au nitrure iii
WO2022177503A1 (fr) * 2021-02-22 2022-08-25 Igss-Gan Pte Ltd Appareil à semi-conducteur et son procédé de fabrication
CN115012040B (zh) * 2022-08-09 2022-10-21 北京大学 一种利用单晶二维材料制备大尺寸氮化物体单晶的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496408A1 (fr) * 1980-12-18 1982-06-25 Distrival Sa Procede de stabilisation de produits nutritionnels liposolubles degradables, produits obtenus et application dietetique et therapeutique
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP2795294B2 (ja) * 1991-10-12 1998-09-10 日亜化学工業株式会社 窒化ガリウムアルミニウム半導体の結晶成長方法。
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JP3757339B2 (ja) * 1995-12-26 2006-03-22 富士通株式会社 化合物半導体装置の製造方法
JP3712770B2 (ja) * 1996-01-19 2005-11-02 豊田合成株式会社 ３族窒化物半導体の製造方法及び半導体素子
JPH09312546A (ja) * 1996-05-22 1997-12-02 Kyocera Corp 弾性表面波装置
KR19980079320A (ko) * 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
JP4783483B2 (ja) * 1997-11-07 2011-09-28 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体基板および半導体基板の形成方法
JPH11186602A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 発光素子および結晶成長方法
JPH11298039A (ja) * 1998-03-20 1999-10-29 Ind Technol Res Inst ＧａＮ層および緩衝層の成長法およびその構造
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
JP4298023B2 (ja) * 1998-10-28 2009-07-15 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法
JP2000150388A (ja) * 1998-11-05 2000-05-30 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜およびその製造方法
JP4174910B2 (ja) * 1999-05-21 2008-11-05 昭和電工株式会社 Ｉｉｉ族窒化物半導体素子
FR2807909B1 (fr) * 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche

Also Published As

Publication number Publication date
US20080185611A2 (en) 2008-08-07
US20080050894A1 (en) 2008-02-28
CN1436365A (zh) 2003-08-13
EP1290721B1 (fr) 2015-01-21
US20030136333A1 (en) 2003-07-24
US20080188065A2 (en) 2008-08-07
JP5378634B2 (ja) 2013-12-25
KR20030007896A (ko) 2003-01-23
EP1290721A1 (fr) 2003-03-12
JP2003536257A (ja) 2003-12-02
KR100897589B1 (ko) 2009-05-14
US20080048207A1 (en) 2008-02-28
CN101241883A (zh) 2008-08-13
FR2810159B1 (fr) 2005-04-08
FR2810159A1 (fr) 2001-12-14
US7767307B2 (en) 2010-08-03
CA2411606A1 (fr) 2001-12-13
CN100380588C (zh) 2008-04-09
CA2411606C (fr) 2010-03-16
WO2001095380A1 (fr) 2001-12-13
US7776154B2 (en) 2010-08-17
US7273664B2 (en) 2007-09-25
CN101241883B (zh) 2012-03-21

Similar Documents

Publication Publication Date Title
AU2001266131A1 (en) Preparation method of a coating of gallium nitride
AU2001279016A1 (en) Method of backtracing network performance
AU2001269778A1 (en) Method of forming antireflective coatings
AU2001244643A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001241108A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001240115A1 (en) Method for the preparation of tetrahydrobenzothiepines
AU2001275231A1 (en) Method of preparing salicylamides
AU2001279163A1 (en) Method of controlling stress in gallium nitride films deposited on substrates
AU2001247389A1 (en) Iii-v nitride substrate boule and method of making and using the same
AU2001281493A1 (en) Method of preparing a polymerizate
AU2002212071A1 (en) Transmission method of several services combination
GB2392676B (en) Method of depositing aluminium nitride
AU2000276782A1 (en) Spray-spin coating method
AU2001271150A1 (en) A method of communication
AU2001252884A1 (en) Method of dopamine inhibition using l-threo-methylphenidate
AU2001264628A1 (en) A method of securely delivering a package
AU2001255804A1 (en) Nitride layer forming methods
AU2002250627A1 (en) A method of preparing a growth substrate
AU2002308986A1 (en) Process for preparation of a quinolinecarbaldehyde
AU2001272339A1 (en) Method for producing silicon nitride
AU6084401A (en) A method of cultivation of bryophytes
AUPQ639300A0 (en) Method of enhancing or maintaining a relationship
EP1174911A3 (fr) Couche anti-reflet en nitrure de silicium
AU2001233180A1 (en) Method of preparing a sustained release composition
AU2001286268A1 (en) Method of forming complex
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载