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WO2023211361A1 - Appareil de banc optique et son procédé de fabrication pour intégration laser hétérogène - Google Patents

Appareil de banc optique et son procédé de fabrication pour intégration laser hétérogène Download PDF

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Publication number
WO2023211361A1
WO2023211361A1 PCT/SG2022/050262 SG2022050262W WO2023211361A1 WO 2023211361 A1 WO2023211361 A1 WO 2023211361A1 SG 2022050262 W SG2022050262 W SG 2022050262W WO 2023211361 A1 WO2023211361 A1 WO 2023211361A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical bench
active chip
chip
substrate
silicon
Prior art date
Application number
PCT/SG2022/050262
Other languages
English (en)
Inventor
Chee Wei LEE
Original Assignee
Compoundtek Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compoundtek Pte. Ltd. filed Critical Compoundtek Pte. Ltd.
Priority to PCT/SG2022/050262 priority Critical patent/WO2023211361A1/fr
Publication of WO2023211361A1 publication Critical patent/WO2023211361A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4238—Soldering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4245—Mounting of the opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks

Definitions

  • the disclosures made herein relate generally to an optical apparatus, and more particularly to an optical bench apparatus and a method for fabricating an optical bench apparatus for a heterogeneous laser integration.
  • silicon photonics enables the realization of various passive and active optical components, such as optical waveguides, splitters, filters, wavelength multiplexer (mux)/Demultiplexer (demux), modulators etc.
  • silicon due to the silicon’s material property of having an indirect bandgap, it is poorly suited for making light sources such as laser or light emitting diodes.
  • This requires compound semiconductor material systems such as Gallium Arsenide (GaAs) or Indium Phosphide (InP).
  • GaAs Gallium Arsenide
  • InP Indium Phosphide
  • Flip chip bonding integration is one such technology, in which light emitter chips are flipped upside down and solder-bonded onto a common substrate called optical bench, and the light is coupled between them through precisely aligned waveguides.
  • the technique is also an important packaging technology to allow passive alignment between optical chips that is both cost effective, more reliable and make integration multiple chips on one optical bench possible.
  • semiconductor material systems e.g., silicon material system
  • United States Patent Publication No.: US 2016/0291265 Al discloses optical alignment of two semiconductor chips to form a hybrid semiconductor device.
  • One of the chips is flip-chip mounted in a recess formed in a main face of the other chip. Even though the said process allows quick and accurate alignment of the chips, the process of flipping needs complex and space consuming setup, which increases the cost and complexity of the manufacturing process.
  • the present invention relates to an optical bench apparatus for heterogeneous laser integration.
  • the optical bench apparatus comprises a first chip including a first substrate, a first waveguide and an optical bench on at least one portion of the first substrate and an active chip (106) formed with a second waveguide.
  • At least one vertical alignment pillar is formed on at least one portion of the optical bench.
  • At least one cavity is formed at a bottom portion of the active chip (106), wherein each cavity is configured to receive a top portion of a corresponding vertical alignment pillar when the active chip is placed on the optical bench, such that the waveguides are aligned with one another to form an optical path between the first chip and the active chip.
  • the first substrate is a silicon-on-silicon substrate.
  • the optical bench includes two Silicon dioxide (SiCh) layers and a silicon device layer sandwiched between the S i(>2 layers.
  • a thickness of the silicon device layer is in range of 220 nm to 340 nm and is top-cladded with 3 to 4 pm of SiCh.
  • the active chip comprises at least one of an edgeemitting laser and a photodetector.
  • the active chip and the optical bench are bonded using adhesives, wherein the adhesives include at least one of a solder paste and a metal solders.
  • the present invention relates to a method for fabricating an optical bench apparatus.
  • the method comprises the steps of forming a first chip including a first substrate, a first waveguide and an optical bench, forming an active chip including a second waveguide and placing the active chip on the optical bench.
  • the optical bench is on at least one portion of the first substrate and at least one vertical alignment pillar is on at least one portion of the optical bench.
  • the step of forming the active chip includes forming at least one cavity at a bottom portion of the active chip, wherein each cavity is configured to receive a top portion of a corresponding vertical alignment pillar when the active chip is placed on the optical bench, such that the waveguides are aligned with one another to form an optical path between the first chip and the active chip.
  • FIGURE 1 shows a longitudinal sectional side view of an optical bench apparatus, according to one embodiment of the present invention.
  • FIGURE 2 shows a longitudinal sectional top view of an optical bench apparatus, according to one embodiment of the present invention.
  • FIGURE 3 is an example flow chart illustrating a method for fabricating the optical bench apparatus, according to one embodiment of the present invention.
  • the embodiment herein is to provide an optical bench apparatus for a heterogeneous laser integration.
  • the optical bench apparatus includes an optical bench formed on at least one portion of a first substrate and an active chip formed on at least one portion of a second substrate. At least one cavity is formed at a bottom portion of the active chip. At least one vertical alignment pillar is formed on at least one portion of the optical bench. When the active chip is placed on the optical bench, each cavity receives a corresponding pillar, such that a waveguide in the active chip is automatically aligned with a waveguide in the first chip, so as to provide an optical light path alignment between the two chips.
  • the optical bench apparatus including with one or multiple deeply etched pillars on the optical bench, together with an active chip with etched through cavities.
  • the precision in optical light path alignment is achieved via the fabricated vertical alignment pillars on the optical bench matched and aligned with the cavities on the active chip.
  • the alignment between the active chip and optical bench is automatically achieved by the vertical pillars fabricated on the optical bench and the cavities fabricated on the active chip, through any conventional wafer process e.g. lithography and deep etching.
  • the active chip can be easily aligned with the optical bench without a need for flipping the active chip before mounting, which in turn avoids a need for a flipping chamber altogether while enabling easy visual alignment check, and thus minimizing cost, complexity and space requirements for the entire process.
  • the proposed optical bench apparatus creates a better heat dissipation channel from the bonded chip to the silicon optical bench substrate through the deep-etch recess and solder paste, which is typically an excellent heat conducting material.
  • the active chip does not need to be flipped (as required for common flip chip process), and hence, visual alignment check can be done.
  • FIGURE 1 and FIGURE 2 illustrate a longitudinal sectional side view and longitudinal sectional top view of an optical bench apparatus (100), according to one embodiment of the present invention.
  • the optical bench apparatus (100) includes a first chip (101) formed with a first substrate (102a), a first waveguide (103a) and an optical bench (104) (also called as single hosting chip), an active chip (106) and adhesives.
  • the first substrate (102a) is a silicon-on- silicon substrate.
  • the active chip (106) can include, for example, but not limited to an edge-emitting laser and a photodetector.
  • the adhesives can include, for example, but not limited to a solder paste (108) and metal solders.
  • the optical bench (104) is formed on at least one portion of the first substrate (102a).
  • the active chip (106) and the optical bench (104) are bonded using the adhesives.
  • the optical bench (104) is formed by a silicon device layer sandwiched between two silicon dioxide (S i O2 layers.
  • the bottom SiCh) layer is a 3 pm thick and the top SiCh layer is 3 to 4 pm thick. Furthermore, thickness of the silicon device layer is in range of 220 nm to 340 nm.
  • the at least one vertical alignment pillar (110) is formed on at least one portion of the first substrate (102a) and the at least one cavity (112) is formed at a bottom portion of the active chip (106).
  • a shape of the at least one vertical alignment pillar (110) can be a circular shape, rectangular shape, a square shape or the like.
  • the active chip (106) includes a second substrate (102b), wherein each cavity (112) is formed at bottom of the second substrate (102b).
  • Each cavity (112) is configured to receive at least top portion of the corresponding vertical alignment pillar (110).
  • One or more sidewalls of each cavity (112) configured such that the top portion of the vertical alignment pillar (110) abuts against the sidewalls of the cavity (112) as shown in FIGURE 1, to stop the vertical alignment pillar (110) from being further inserted inside the cavity (112).
  • the active chip (106) is bonded onto the optical bench (104), so as to provide a heat dissipation channel in the optical bench apparatus (100) as well as to form an electrical connection between the two chips (101, 106).
  • the active chip (106) equipped with the cavities (11) designed precisely to match with the vertical pillars (110) on the optical bench (104), are aligned using a die attached machine (not shown) and the active chip (106) and the optical bench (104) are bonded together using adhesives that can include solder paste (108) or metal solders, as shown in FIGURE 1.
  • the proposed optical bench apparatus (100) can be used to bond and integrate one or multiple chips, or a single chip with array of multiple devices (not shown), onto the optical bench (104).
  • FIGURE 2 is an example flow chart (S200) illustrating a method for fabricating the optical bench apparatus (100), according to one embodiment of the present invention. The method comprises the steps of: forming a first chip (201) including a first waveguide and an optical bench, forming an active chip (202) including a second waveguide and placing the active chip on the optical bench (203), such that the two waveguides are aligned to form an optical path between the two chips.
  • At least one cavity is formed at a bottom portion of the active chip, wherein each cavity is configured to receive a top portion of a corresponding vertical alignment pillar on the optical bench, when the active chip is placed on the optical bench, such that the waveguides are aligned with one another to form the optical path.
  • the first chip includes a first substrate, wherein the optical bench is on at least one portion of the first substrate and at least one vertical alignment pillar is on at least one portion of the optical bench.
  • the first substrate is a silicon-on-silicon substrate.
  • the optical bench includes two Silicon dioxide (SiCh) layers and a silicon device layer sandwiched between the SiOi layers.
  • thickness of the silicon device layer is in a range of 220 nm to 340 nm.
  • the silicon device layer is top-cladded with 3 to 4 pm of SiCh-
  • the active chip includes at least one of an edge-emitting laser and a photodetector.
  • the active chip is bonded to the optical bench using adhesives, wherein the adhesives include at least one of a solder paste and a metal solders e.g. gold tin solder.
  • multiple deeply etched pillars are formed on the optical bench by any conventional fabrication process.
  • the cavities are etched at the bottom portion of the active chip through any conventional process.
  • the pillars and the cavities are configured in such a way that each cavity receives at least a top portion of the corresponding pillar when the active chip is placed on the optical bench.
  • One or more sidewalls of each cavity are configured to abut the top portion of the vertical alignment pillar when a predetermined length of the top portion of the pillar is inserted into the cavity.
  • the present invention ensures proper positioning of the active chip with respect to the optical bench, and thus realizing precise alignment between the waveguides without a need for flip mounting the active chip, which in turn avoids a need for a flipping chamber or assembly and thereby allowing quicker and more accurate alignment of the chips without a need for complex and space consuming setups.
  • the proposed method can be used to create a better heat dissipation channel from the bonded active chip to the first substrate (102a) through a deepetch recess and the solder paste (108), which is typically an excellent heat conducting material. Since the cavities are formed at the bottom portion of the active chip, there is no need to flip the active chip while aligning it with the first chip, while enabling easy visual alignment check.
  • the proposed method provides a high precision requirement ( ⁇ 0.5 um) than flip chip alignment between the active chip and the optical bench.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un appareil de banc optique (100) pour une intégration laser hétérogène. L'appareil de banc optique (100) comprend une première puce (101) comprenant un premier substrat (102a), un premier guide d'ondes et un banc optique (104) formé sur au moins une partie du premier substrat (102a). Au moins un pilier d'alignement vertical (110) est formé sur au moins une partie du banc optique (104). Une puce active (106) est formée avec un second guide d'ondes. En outre, la présente invention concerne un procédé de fabrication de l'appareil de banc optique.
PCT/SG2022/050262 2022-04-28 2022-04-28 Appareil de banc optique et son procédé de fabrication pour intégration laser hétérogène WO2023211361A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/SG2022/050262 WO2023211361A1 (fr) 2022-04-28 2022-04-28 Appareil de banc optique et son procédé de fabrication pour intégration laser hétérogène

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2022/050262 WO2023211361A1 (fr) 2022-04-28 2022-04-28 Appareil de banc optique et son procédé de fabrication pour intégration laser hétérogène

Publications (1)

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WO2023211361A1 true WO2023211361A1 (fr) 2023-11-02

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040090660A (ko) * 2003-04-18 2004-10-26 한국전자통신연구원 광수동 정렬용 각진 홈을 이용한 플립칩 본딩방법 및 광모듈
US20150063747A1 (en) * 2013-08-31 2015-03-05 Acacia Communications Inc. Fiber assembly for facet optical coupling
US9029759B2 (en) * 2012-04-12 2015-05-12 Nan Chang O-Film Optoelectronics Technology Ltd Compact camera modules with features for reducing Z-height and facilitating lens alignment and methods for manufacturing the same
US20160291265A1 (en) * 2015-04-01 2016-10-06 Coriant Advanced Technology, LLC Optically Aligned Hybrid Semiconductor Device and Method
US20170194522A1 (en) * 2014-11-18 2017-07-06 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040090660A (ko) * 2003-04-18 2004-10-26 한국전자통신연구원 광수동 정렬용 각진 홈을 이용한 플립칩 본딩방법 및 광모듈
US9029759B2 (en) * 2012-04-12 2015-05-12 Nan Chang O-Film Optoelectronics Technology Ltd Compact camera modules with features for reducing Z-height and facilitating lens alignment and methods for manufacturing the same
US20150063747A1 (en) * 2013-08-31 2015-03-05 Acacia Communications Inc. Fiber assembly for facet optical coupling
US20170194522A1 (en) * 2014-11-18 2017-07-06 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
US20160291265A1 (en) * 2015-04-01 2016-10-06 Coriant Advanced Technology, LLC Optically Aligned Hybrid Semiconductor Device and Method

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