WO2019236011A1 - Perovskites et leurs utilisations - Google Patents
Perovskites et leurs utilisations Download PDFInfo
- Publication number
- WO2019236011A1 WO2019236011A1 PCT/SG2019/050292 SG2019050292W WO2019236011A1 WO 2019236011 A1 WO2019236011 A1 WO 2019236011A1 SG 2019050292 W SG2019050292 W SG 2019050292W WO 2019236011 A1 WO2019236011 A1 WO 2019236011A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- perovskite
- perovskites
- halide
- metal halide
- formula
- Prior art date
Links
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 34
- 150000005309 metal halides Chemical class 0.000 claims abstract description 34
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 150000001768 cations Chemical class 0.000 claims abstract description 22
- -1 halide anion Chemical class 0.000 claims abstract description 22
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 claims abstract description 21
- 235000021286 stilbenes Nutrition 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 230000005693 optoelectronics Effects 0.000 claims abstract description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 28
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 22
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 7
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 150000004820 halides Chemical class 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 150000002222 fluorine compounds Chemical group 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 9
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229940071870 hydroiodic acid Drugs 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 150000003863 ammonium salts Chemical class 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 150000002892 organic cations Chemical class 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 150000001450 anions Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 3
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 3
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 3
- BKOIAMMXTBGSGT-UHFFFAOYSA-N 2-[4-(2-phenylethenyl)phenyl]ethanamine Chemical compound C1=CC(CCN)=CC=C1C=CC1=CC=CC=C1 BKOIAMMXTBGSGT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910010165 TiCu Inorganic materials 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- FGXKQXGCJXOIAL-UHFFFAOYSA-N 1,2,3,4,5-pentafluoro-6-(2-phenylethenyl)benzene Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1C=CC1=CC=CC=C1 FGXKQXGCJXOIAL-UHFFFAOYSA-N 0.000 description 1
- ZJSKEGAHBAHFON-UHFFFAOYSA-N 1-ethenyl-3-fluorobenzene Chemical compound FC1=CC=CC(C=C)=C1 ZJSKEGAHBAHFON-UHFFFAOYSA-N 0.000 description 1
- FMGVTMQBJISCFC-UHFFFAOYSA-N 1-fluoro-2-(2-phenylethenyl)benzene Chemical compound FC1=CC=CC=C1C=CC1=CC=CC=C1 FMGVTMQBJISCFC-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- AXZGHASCZFFFCP-VOTSOKGWSA-N CNCCc1ccc(/C=C/c(c(F)c(c(F)c2F)F)c2F)cc1 Chemical compound CNCCc1ccc(/C=C/c(c(F)c(c(F)c2F)F)c2F)cc1 AXZGHASCZFFFCP-VOTSOKGWSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- DIASFFFDKLJOGC-UHFFFAOYSA-O [NH3+]CCc1ccc(C=Cc2cccc(F)c2)cc1 Chemical compound [NH3+]CCc1ccc(C=Cc2cccc(F)c2)cc1 DIASFFFDKLJOGC-UHFFFAOYSA-O 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021474 group 7 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- KVIKMJYUMZPZFU-UHFFFAOYSA-N propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)O KVIKMJYUMZPZFU-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000008149 soap solution Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
Definitions
- m is selected from 1-5.
- R is a halide. In another embodiment, R is selected from F, Cl or Br. In certain embodiments, R is F.
- a compound of Formula (I) may be selected from the following non-limiting examples/generic embodiments (wherein m is 1):
- the halide anion is selected from a fluoride anion, a chloride anion, a bromide anion, an iodide anion.
- the halide anion is a fluoride anion.
- the halide anion is a chloride anion.
- the halide anion is a bromide anion.
- the halide anion is an iodide anion.
- the present disclosure provides a metal halide perovskite compound of Formula (II):
- [C] is an anion, which many be derived from the [A] salt (i.e. [A][C]) and the [B] salt (i.e. [B][C] 2 ). Accordingly, in an embodiment, [C] from the [A] salt and [C] from the [B] salt are similar. In another embodiment, [C] from the [A] salt and [C] from the [B] salt are different. In another embodiment, [C] is selected from a fluoride anion, a chloride anion, a bromide anion, an iodide anion. In another embodiment, [C] is a fluoride anion. In another embodiment, [C] is a chloride anion. In another embodiment, [C] is a bromide anion. In another embodiment, [C] is an iodide anion.
- the present disclosure also provides a method of forming the metal halide 2D perovskite.
- the method of forming a metal halide 2D perovskite includes a step (a) of dissolving lead(II) oxide and compound of Formula (I) in a solvent comprising of HI and ethanol and at a predetermined temperature to form a mixture, and a step (b) of cooling the mixture to form the metal halide 2D perovskite.
- a solvothermal process can be used to form the metal halide 2D perovskite.
- SA 2-(4-stilbenyl)ethanamine
- SAI 2-(4-(3-fluoro)stilbenyl)ethanammonium iodide
- FSAI 2-(4-(3- fluoro)stilbenyl)ethanammonium iodide
- HI hydroiodic acid
- Crystals of the stilbene perovskite (SP) was obtained under solvothermal conditions by dissolving lead(II) oxide and compound of Formula (I) in a mixture of HI and ethanol (EtOH) at 90 °C, followed by slow cooling to allow for crystallisation of the perovskites. EtOH was used to enhance the solubility of Compound of Formula (I) which was poor in pure HI.
- the synthesized stilbene amine derivatives were investigated as an organic halide salt additive to standard 3D perovskite based on methylammonium lead iodide (MALI) when the latter is evaluated as solar cell material (Fig. 2).
- MALI methylammonium lead iodide
- the fluorine-doped tin oxide (FTO) coated glass was etched with Zn powder (Sigma- Aldrich) and 4 M hydrochloric acid (Sigma-Aldrich) and followed by sequential cleaning with decon soap solution (20 minutes), deionized water (15 minutes), ethanol (15 minutes), and acetone (15 minutes).
- a thin compact layer of Ti0 2 was deposited on the cleaned FTO by spray pyrolysis using N 2 as the carrying gas at 450°C from a precursor solution consisting of 0.6 mL titanium diisopropoxide and 0.4 mL bis(acetylacetonate) dissolved in 9 mL anhydrous Isopropanol (1:9 v/v ratio).
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
Abstract
La présente invention concerne des perovskites et leurs utilisations. En particulier, la présente invention concerne des pérovskites d'halogénures métalliques dérivatisées. La pérovskite d'halogénure métallique comprend un cation métallique, un cation d'ammonium dérivé de stilbène et un anion halogénure. La présente invention concerne également des dispositifs optoélectroniques et des matériaux comprenant lesdites perovskites.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201804891R | 2018-06-08 | ||
SG10201804891R | 2018-06-08 |
Publications (1)
Publication Number | Publication Date |
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WO2019236011A1 true WO2019236011A1 (fr) | 2019-12-12 |
Family
ID=68770090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/SG2019/050292 WO2019236011A1 (fr) | 2018-06-08 | 2019-06-10 | Perovskites et leurs utilisations |
Country Status (1)
Country | Link |
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WO (1) | WO2019236011A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111769435A (zh) * | 2020-07-10 | 2020-10-13 | 澳门大学 | 一种激光多脉冲的产生方法以及金属卤化物钙钛矿多量子阱材料在激光多脉冲产生中的应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882548A (en) * | 1997-05-08 | 1999-03-16 | International Business Machines Corporation | Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework |
JP2003036977A (ja) * | 2001-07-25 | 2003-02-07 | Japan Science & Technology Corp | ハロゲン化鉛系層状ペロブスカイト化合物の燐光を利用した電界発光素子 |
-
2019
- 2019-06-10 WO PCT/SG2019/050292 patent/WO2019236011A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882548A (en) * | 1997-05-08 | 1999-03-16 | International Business Machines Corporation | Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework |
JP2003036977A (ja) * | 2001-07-25 | 2003-02-07 | Japan Science & Technology Corp | ハロゲン化鉛系層状ペロブスカイト化合物の燐光を利用した電界発光素子 |
Non-Patent Citations (1)
Title |
---|
ERA M. ET AL.: "PbBr-Based Layered Perovskite Organic-Inorganic Superlattice with Photochromic Chromophore-Linked Ammonium Molecules as an Organic Layer", MOLECULAR CRYSTALS AND LIQUID CRYSTALS, vol. 371, no. 1, 1 January 2001 (2001-01-01), pages 183 - 186, XP055661137 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111769435A (zh) * | 2020-07-10 | 2020-10-13 | 澳门大学 | 一种激光多脉冲的产生方法以及金属卤化物钙钛矿多量子阱材料在激光多脉冲产生中的应用 |
CN111769435B (zh) * | 2020-07-10 | 2021-07-20 | 澳门大学 | 一种激光多脉冲的产生方法以及金属卤化物钙钛矿多量子阱材料在激光多脉冲产生中的应用 |
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