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WO2019168175A1 - Élément de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique Download PDF

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Publication number
WO2019168175A1
WO2019168175A1 PCT/JP2019/008198 JP2019008198W WO2019168175A1 WO 2019168175 A1 WO2019168175 A1 WO 2019168175A1 JP 2019008198 W JP2019008198 W JP 2019008198W WO 2019168175 A1 WO2019168175 A1 WO 2019168175A1
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Prior art keywords
metal layer
photoelectric conversion
conversion element
semiconductor
pattern
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PCT/JP2019/008198
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English (en)
Japanese (ja)
Inventor
克悟 花村
和真 磯部
宇野　智裕
徳丸　慎司
小林　孝之
Original Assignee
国立大学法人東京工業大学
日本製鉄株式会社
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Application filed by 国立大学法人東京工業大学, 日本製鉄株式会社 filed Critical 国立大学法人東京工業大学
Priority to JP2020503656A priority Critical patent/JP7075605B2/ja
Publication of WO2019168175A1 publication Critical patent/WO2019168175A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the present disclosure relates to a photoelectric conversion element.
  • thermophotovoltaic power generation device including a photoelectric conversion element that converts light into electric power by the photovoltaic effect, that is, a thermophotovoltaic power generation device is known (see, for example, Patent Document 1).
  • the sensitivity region of the photoelectric conversion element (for example, in the case of GaSb, the wavelength region is 0.8 to 1.8 ⁇ m) is limited, whereas the radiation of high-temperature materials such as steel materials has a relatively wide wavelength region. doing. Radiation light having a wavelength longer than that of the sensitivity region causes the photoelectric conversion element to generate heat and raises the temperature, but does not contribute to power generation, and conversely raises the temperature of the photoelectric conversion element and lowers power generation efficiency.
  • a transmissive plate that absorbs light of a specific wavelength in front of the photoelectric conversion element.
  • a transmissive plate having a light absorption wavelength region in an appropriate region often does not have high heat resistance, and may be softened and deformed by radiant heat, or may be altered and deteriorated in permeability.
  • a general transmissive plate may not be effective in selecting an appropriate wavelength for all light incident in a hemisphere.
  • This disclosure is intended to provide a photoelectric conversion element that can selectively reflect light with the structure of the photoelectric conversion element itself.
  • a photoelectric conversion element using a semiconductor that converts light into electric power by the photovoltaic effect A semiconductor layer made of the semiconductor, a front metal layer that is a metal layer formed on the surface of the semiconductor layer, and a back metal layer that is a metal layer formed on the back surface of the semiconductor layer, A resonator having an MSM structure is formed by the front metal layer, the semiconductor layer, and the back metal layer.
  • a specific absorption region (a region determined by the resonator structure) is formed by forming a resonator having an MSM (metal-semiconductor-metal) structure including a semiconductor layer made of a semiconductor that converts light into electric power. ) Can be selectively converted into electric power, and other light can be reflected.
  • MSM metal-semiconductor-metal
  • the resonator is formed can be proved by measuring the spectral reflectance with a spectrophotometer and confirming that light is absorbed only in a specific region.
  • the back side metal layer is a metal support, The photoelectric conversion element as described in ⁇ 1>.
  • the metal support is, for example, a plate material of Mo, Cu, or SUS.
  • the semiconductor layer may be formed on the metal support as the “back metal layer”
  • the back metal layer is formed on the support (for example, Al 2 O 3 substrate) by sputtering or the like.
  • the plate material as the support is preferably a plate material having a plate thickness of 50 ⁇ m or more, more preferably a plate material having a plate thickness of 100 ⁇ m or more.
  • the front metal layer is a partial pattern;
  • the back side metal layer is a solid pattern,
  • the front metal layer is a partial and continuous pattern, The photoelectric conversion device according to any one of ⁇ 1> to ⁇ 2>.
  • the front side metal layer is a partial pattern although it is partial, the front side metal layer can be used as an electrode of the photoelectric conversion element. That is, the “continuous pattern” in the present disclosure refers to a pattern in which the front side metal layer has continuity to such an extent that the front side metal layer can be used as an electrode of the photoelectric conversion element.
  • the front metal layer is a mesh pattern, The photoelectric conversion element as described in ⁇ 3>.
  • the semiconductor is gallium antimony;
  • the semiconductor layer has a thickness of 50 nm to 1000 nm.
  • the photoelectric conversion element as described in ⁇ 4>.
  • the thickness of the semiconductor layer made of gallium antimony, which is a semiconductor is less than 50 nm, the power generation improvement effect due to resonance is low, and the depletion layer thickness is also insufficient, so the power generation amount is low.
  • the thickness of the semiconductor layer is thicker than 1000 nm, the first resonance wavelength shifts to the longer wavelength side, so that the power generation efficiency decreases due to the shift from the wavelength region contributing to power generation, and a uniform crystal It is difficult to stably manufacture the constituent elements.
  • the thickness of the semiconductor layer is more preferably from 100 nm to 300 nm, and even more preferably from 200 nm to 300 nm.
  • the thickness of the front side metal layer is 80 nm or more and 1000 nm or less.
  • the thickness of the front metal layer is less than 80 nm, radiation light in a wavelength region that does not contribute to power generation passes through the front metal layer, and the temperature of the photoelectric conversion element excessively increases. If the thickness of the front side metal layer is greater than 1000 nm, the time for forming the front side metal layer by deposition becomes longer, or the radiation light is absorbed by this metal layer, the wavelength selectivity is lowered and the power generation efficiency is lowered. Or The thickness of the front side metal layer is more preferably from 100 nm to 600 nm, still more preferably from 100 nm to 300 nm.
  • the semiconductor is gallium antimony;
  • the opening ratio of the front metal layer is 30% or more and 97% or less.
  • the photoelectric conversion element according to any one of ⁇ 4> to ⁇ 4-3>.
  • the aperture ratio of the front metal layer is more preferably 50% or more and 90% or less.
  • the aperture ratio of the front metal layer refers to the ratio of the area of the surface of the semiconductor layer that is not covered with metal.
  • the semiconductor is gallium antimony;
  • the semiconductor layer has a thickness of 50 nm or more and 1000 nm or less,
  • the opening ratio of the front metal layer is 30% or more and 97% or less.
  • the semiconductor is gallium antimony;
  • the semiconductor layer has a thickness of 50 nm or more and 1000 nm or less,
  • the thickness of the front side metal layer is 80 nm or more and 1000 nm or less,
  • the opening ratio of the front metal layer is 30% or more and 97% or less.
  • the photoelectric conversion element as described in ⁇ 4>.
  • the opening of the mesh-like pattern of the front side metal layer is rectangular,
  • the length of one side of the opening is preferably 300 nm or more and 900 nm or less. If the length of one side of the opening is less than 300 nm, light of 0.8 ⁇ m or more which is a GaSb sensitivity region is reflected, and power generation efficiency is reduced. Further, when the length of one side of the opening is 900 nm or more, light of 1.8 ⁇ m or more that does not contribute to the power generation of GaSb is also absorbed, and the temperature of the photoelectric conversion element is excessively increased.
  • the opening of the mesh-like pattern of the front metal layer is circular,
  • the mesh opening has no directionality in the width (direction on the XY plane), and the long wavelength shielding effect can be easily controlled by the waveguide principle.
  • the “circular shape” here is not limited to a perfect circular shape, and includes a case where the ratio of the maximum value to the minimum value of the width of the mesh-shaped opening is 1.1 or less.
  • the ratio of the maximum value to the minimum value of the width of the mesh opening is preferably 1.05 or less.
  • the front side metal layer is an island-shaped pattern.
  • the front side metal layer is a rectangular island pattern, The photoelectric conversion element as described in ⁇ 5>.
  • the front metal layer is an Au layer, an Ag layer, an Au alloy layer, or an Ag alloy layer.
  • the photoelectric conversion device according to any one of ⁇ 6>.
  • the front metal layer is an Au layer or an Au alloy layer
  • the reflectance in a wavelength region other than the specific region is high, and the front metal layer is unlikely to deteriorate over time.
  • the front side metal layer is an Ag layer or an Ag alloy layer, it has high electrical conductivity while increasing the reflectance in the wavelength region other than the specific region, so that it is possible to reduce power generation loss and compare material costs. Inexpensive.
  • the front side metal layer is a composite pattern in which a plurality of rectangular blocks in which the same pattern is repeated in each block are arranged vertically and horizontally.
  • the photoelectric conversion element according to any one of items.
  • the average reflectance in the sensitivity region of the semiconductor is 30% or less.
  • the photoelectric conversion device according to any one of items.
  • the reflectance in the sensitivity region is low (that is, the absorption rate in the sensitivity region is high), the light in the sensitivity region can be efficiently used for power generation.
  • the semiconductor is gallium antimony;
  • the average reflectance at a wavelength of 0.8 to 1.8 ⁇ m is 30% or less.
  • the photoelectric conversion device according to any one of items.
  • the semiconductor is gallium antimony;
  • the average reflectance at a wavelength of 0.8 to 1.8 ⁇ m is 30% or less,
  • the average reflectance at a wavelength of 1.8 to 5.0 ⁇ m is 90% or more.
  • ⁇ 1> to ⁇ 8> The photoelectric conversion device according to any one of items.
  • FIG. 1 is a diagram schematically illustrating a photoelectric conversion element 10 according to the first embodiment.
  • the photoelectric conversion element 10 has an MSM (metal-semiconductor-metal) structure in which the front and back surfaces of the semiconductor layer 30 are sandwiched between metal layers 20 and 40 (the front-side metal layer 20 and the back-side metal layer 40).
  • the photoelectric conversion element 10 includes a semiconductor layer 30 made of a semiconductor, a front-side metal layer 20 that is a metal layer formed on the surface of the semiconductor layer 30 (upper side surface in the figure), and a back surface of the semiconductor layer 30 (in the figure).
  • a back side metal layer 40 which is a metal layer formed on the lower side surface.
  • the semiconductor constituting the semiconductor layer 30 is GaSb (gallium antimony).
  • the semiconductor layer 30 is formed with a semiconductor pn junction and has a function of converting light into electric power by the photovoltaic effect.
  • GaSb has a band gap of 0.67 eV and a sensitivity region of 0.8 to 1.8 ⁇ m.
  • the metal constituting the metal layers 20 and 40 is, for example, Au (gold) or an Au alloy.
  • Au or Au alloy has high reflectivity and high wavelength selectivity. Moreover, if it is an Ag layer or an Ag alloy layer, since the electrical conductivity is high while increasing the reflectance in a wavelength region other than the specific region, power generation loss can be reduced, and the material cost is also relatively inexpensive.
  • the metal constituting the front-side metal layer 20 may be, for example, molybdenum or other metal.
  • the back side metal layer 40 is a pattern (in this disclosure, such a pattern is referred to as a solid pattern) formed on the entire back surface (entire) of the semiconductor layer 30.
  • the front-side metal layer 20 is not a solid pattern but a partial pattern, and a portion covered with metal and a portion not covered are present on the surface side of the semiconductor layer 30.
  • a portion covered with metal is referred to as an island (a metal element 22 described later).
  • the front metal layer 20 has a rectangular island pattern in which rectangular metal elements 22 are regularly arranged in the vertical and horizontal directions (XY directions in the figure). Due to the regular arrangement of the rectangular island-shaped patterns, the power generation efficiency in a limited region of the semiconductor can be increased, and the design aimed at the resonance frequency described later is easy.
  • the front-side metal layer 20 has a structure in which a plurality of rectangular metal elements 22 are arranged vertically and horizontally when viewed from a direction perpendicular to the semiconductor layer 30.
  • the adjacent rectangular metal elements 22 face each other in parallel with each other.
  • the direction in which the vertical and horizontal sides of the metal element 22 extend and the direction in which the plurality of metal elements 22 are aligned are the same direction (both the X direction and the Y direction in the drawing).
  • the portion of the surface of the semiconductor layer 30 that is not covered with metal extends vertically and horizontally in a grid pattern.
  • These front-side metal layer 20, semiconductor layer 30 and back-side metal layer 40 form a resonator having an MSM structure, and photoelectric conversion element 10 has a resonance frequency corresponding to the MSM structure. Therefore, by appropriately designing the MSM structure, the resonance frequency of the resonator can be matched with the target resonance frequency.
  • the front side metal layer 120 of the photoelectric conversion element 110 of the second embodiment has a mesh pattern. Specifically, a metal film extending vertically and horizontally on the surface of the semiconductor layer 30 is formed in a grid pattern. For this reason, unlike the metal element 22 of the front side metal layer 20 of the first embodiment, the front side metal layer 120 has a continuous pattern. Even when the front metal layer 120 has a mesh pattern, a target resonance frequency can be obtained by interference between the GaSb thick film and the wavelength of incident light, as shown in part in the following equation.
  • the front metal layer 120 is a mesh-like pattern, which is a partial and continuous pattern.
  • the front side metal layer 120 can be used as an electrode of the photoelectric conversion element 110.
  • the electric power obtained with the photoelectric conversion element can be efficiently taken out to the outside rather than the island shape.
  • the mesh shape an opening portion from which the front metal layer is removed is formed, and the mesh-like feature is that an action of a waveguide for confining electromagnetic waves is added by this opening portion. Accordingly, in the mesh pattern, absorption of light in a long wavelength region that should be reflected rather than the island shape can be suppressed, and the power generation efficiency of the photoelectric conversion element can be increased.
  • a structure having a target resonance frequency can be calculated by the following known equations (1) to (5).
  • Expressions (1) to (5) are established for a circuit that can be formed in a cross section parallel to the Y direction when the structure shown in FIG. 2 is regarded as a circuit.
  • a circuit formed in a cross section parallel to the X direction can be similarly formed by replacing w and l and using a period in the X direction (arrangement period of the metal film). Equations (1) to (5) are established on the premise that the movement of electrons in the front metal layer 120 is a superposition of those discussed independently in the XY directions.
  • the horizontal side length (horizontal width) w, the vertical side length (depth) l, the height (film thickness) h, the metal film arrangement period ⁇ , etc. of the mesh-shaped opening shown in FIG. By setting to an appropriate value obtained in step 1, a resonator having a target resonance frequency can be formed.
  • the photoelectric conversion element absorbs light in a wide range centered on a wavelength ⁇ A (a wavelength corresponding to a target resonance frequency). Note that the reflectance of the photoelectric conversion element can be measured using a spectrophotometer.
  • the photoelectric conversion element having the characteristics shown in FIG. 3 absorbs light in the region of about 1.3 to 1.8 ⁇ m and can be used for power generation, but reflects most of the light in the region of 0.8 to 1.3 ⁇ m. doing. Since the region of 0.8 to 1.3 ⁇ m is a GaSb sensitivity region, light in the sensitivity region is reflected, and there is room for further improvement in power generation efficiency in this respect. Then, the structure for the further efficiency improvement of electric power generation is demonstrated using FIG.
  • the front-side metal layer 120 shown in FIG. 4 is a composite pattern in which a plurality of rectangular blocks in which the same pattern is repeated in each block are arranged vertically and horizontally. That is, when the range where the same pattern is repeated is regarded as one block, the front side metal layer 120 shown in FIG. 4 is a composite pattern in which a plurality of blocks are arranged vertically and horizontally.
  • FIG. 4 shows nine blocks 1, 2, 3, 4, 5, 6, 7, 8, 9 among a plurality of blocks arranged vertically and horizontally. That is, the same regular pattern continues outside the range shown in FIG. Each block has the same size.
  • the front side metal layer 120 has a composite pattern in which the blocks of the A pattern and the blocks of the B pattern are arranged in a composite manner.
  • the A pattern block has a resonance frequency determined by its structure
  • the B pattern block has a resonance frequency determined by its structure.
  • the reflectance of the photoelectric conversion element manufactured in this way is shown in FIG.
  • the graph shows the reflectance having peaks at the wavelength ⁇ A corresponding to the resonance frequency of the A pattern and the wavelength ⁇ B corresponding to the resonance frequency of the B pattern.
  • the photoelectric conversion element including the front-side metal layer 120 having the composite pattern illustrated in FIG. 4 has a wider absorption region than that in FIG.
  • the MSM structure of the photoelectric conversion element such that the absorption region by the resonator having the MSM structure overlaps with the sensitivity region of the semiconductor, a photoelectric conversion element with high power generation efficiency can be obtained.
  • the average reflectance is 30% or less at a wavelength of 0.8 to 1.8 ⁇ m, which is the sensitivity region. Since the reflectance in the sensitivity region is low, light in the sensitivity region can be efficiently absorbed and used for power generation.
  • the average reflectivity at a wavelength of 1.8 to 5.0 ⁇ m, which is a longer wavelength region than the sensitivity region, is 90% or more. Since the reflectance in the wavelength region longer than the sensitivity region is high, an unnecessary temperature increase of the semiconductor can be suppressed.
  • the manufacturing method of the MSM structure of the photoelectric conversion elements 10 and 110 is not particularly limited, but for example, it can be manufactured by the following procedures (1) to (3).
  • a back side metal layer 40 is formed on a substrate (not shown) by sputtering.
  • the semiconductor layer 30 having a pn junction is formed on the back metal layer 40 by a thin film growth method such as epitaxial growth.
  • the front side metal layers 20 and 120 are formed in a rectangular island shape or mesh pattern by sputtering.
  • the semiconductor layer 30 may be formed on a Mo, Cu, or SUS plate material that is a metal support, and the front metal layers 20 and 120 may be formed on the semiconductor layer 30.
  • the metal support functions as the back metal layer 40.
  • the present inventor conducted an experiment to examine a specific structure in the case where the front-side metal layer has a mesh pattern (second embodiment).
  • the device was fabricated by sputtering Au as a back side metal layer on a 20 ⁇ 15 mm square, 1 mm thick Al 2 O 3 substrate, then forming a GaSb pn junction by molecular beam epitaxial growth, and sputtering Au as a front side metal layer.
  • the photoelectric conversion element (refer FIG. 2) which has the front side metal layer of a mesh-like pattern was produced.
  • a photoelectric conversion element in which a 100 nm thick GaSb pn junction was formed on an Al 2 O 3 substrate having a size of 20 ⁇ 15 mm and a thickness of 1 mm was manufactured.
  • the power generation output was evaluated by placing each element directly facing a 200 mm square, 10 mm thick high-temperature heat source heated to about 1200 ° C. with a gap of 100 mm, and the power generation amount of each element (output per unit area (W / m 2 )) It was performed by measuring.
  • Each element was used by being attached to a water-cooled copper plate.
  • An SiC plate was used as the high temperature heat source. Specifically, an SiC plate was installed on the heater and the temperature of the SiC plate was heated to about 1200 ° C.
  • Example 1 Based on Example 1, the example in which the power generation output decreased by 10% or more was evaluated as C, the sample having ⁇ 10% or less was evaluated as B, and the example improved by 10% or more was evaluated as A. The case where the power generation output deteriorated markedly was evaluated as D. Further, in order to evaluate the long-time power generation output of the photoelectric conversion element, except for Comparative Example 1, the power generation output after 1 hour and 5 hours after the cooling by the water-cooled copper plate was stopped and the rate of change from the result of zero elapsed time Compared. A case where the decrease in power generation output was within 5% was evaluated as A, a case where it was 5-10% was evaluated as B, and a case where it was 10% or more was evaluated as C. Further, a heat flux sensor is attached between the water-cooled copper plate and the back side metal layer (back side electrode), the heat flux is measured, and an example smaller than the heat flux of Example 1 is evaluated B and a large example is evaluated C It was.
  • Example 1 a sufficiently high power generation output was obtained, whereas in Comparative Example 1, power generation was extremely low (Evaluation D). This is probably because Example 1 has an MSM structure and reflects unnecessary radiation, whereas Comparative Example 1 absorbs unnecessary radiation and the temperature of the element is excessively increased.
  • Example 1 the thickness of GaSb was evaluated.
  • Example 2 where the thickness of GaSb was 10 nm, the power generation output was lower than that in Example 1 (Evaluation C).
  • Example 6 in which the thickness of GaSb was greater than 1000 nm, the power generation output was not significantly different from that in Example 1, but there was a problem that the thick film formation was unstable (remarks column).
  • Example 3 with a GaSb thickness of 50 nm, the power generation output was improved compared to Example 2 with 10 nm, and in Example 4 with 300 nm, the power generation output was the best.
  • Example 1 and 7 to 13 the mesh opening diameter (specifically, the length of one side of the square mesh opening) was evaluated.
  • the power generation output decreased by 10% or more compared to Example 1 (Evaluation C).
  • Examples 9, 10, and 11 having mesh opening diameters of 300 nm, 600 nm, and 900 nm, good power output was obtained (Evaluation A).
  • Example 13 having a mesh opening diameter of 1500 nm, the power generation output decreased by 10% or more (Evaluation C).
  • Example 1 the thickness of the front metal layer was evaluated.
  • Example 14 where the thickness of the front side metal layer was 70 nm, the power generation output decreased (Evaluation C).
  • Example 20 in which the thickness of the front side metal layer was 1100 nm, the power generation output was equivalent to Example 1 (Evaluation B), but it was difficult to form a thick film (Remarks column).
  • Example 17 and 18 in which the thickness of the front metal layer was 200 nm and 600 nm, the power generation output was high (Evaluation A), and the power generation output after 1 hour and 5 hours also maintained a high value (both Evaluation A).
  • Example 21 the mesh opening was not a square but a circle.
  • a circular opening having a diameter of 226 nm was used so that the area of the mesh opening was equal to that in Example 1.
  • the power generation output was equivalent to Example 1 (Evaluation B). Even if the mesh opening is circular, it was confirmed that the same effect as in the case of the square was obtained.
  • Example 22 an element having an opening diameter of 100 nm short side and 400 nm long side instead of a square shape was prepared and evaluated. As a result, it was found that even if the opening was rectangular, high power output, long time power output and heat flux were exhibited.
  • Example 1 and 24 to 27 the difference in support for device fabrication was evaluated. Note that Example 23 is a missing number. Two types of metal substrates were evaluated: SUS and Mo, and five types of ceramic substrates were Al 2 O 3 , AlN, and Si 3 N 4 . The substrate is described in the remarks column. Examples 1, 24 to 27 showed good power generation output regardless of the type of substrate. In particular, SUS, Mo metal substrates, and Si 3 N 4 ceramic substrates maintained high values of power generation output after 1 hour and 5 hours, and exhibited good characteristics.
  • Example 28 the width of the front metal layer was evaluated. In Example 28 where the width of the surface electrode layer was 20 nm, it was difficult to form a pressure film.
  • the present inventor examined the opening shape, the opening diameter, and the opening ratio in Comparative Example 2 and Examples 33 to 55.
  • the manufacturing method of the element is the same as that of the example of Table 1.
  • the evaluation of the power generation output was an element in which a GaSb pn junction was formed to a thickness of 300 nm on an Al 2 O 3 substrate, and the front metal layer was formed into a line having a thickness of 300 nm and a width of 1 mm (Comparative Example 2).
  • Comparative Example 2 since the front side metal layer is a line having a width of 1 mm, a resonator is naturally not formed.
  • the evaluation A is a decrease rate of 20% or less.
  • the evaluation was B, the evaluation C was over 20% and 40% or less, and the evaluation D was over 40%.
  • the wavelength selectivity was evaluated as A when the output / heat flux exceeds 40%, as evaluation B when it exceeds 30% and 40% or less, as evaluation C when it exceeds 20%, and as evaluation D when it is 20% or less.
  • the evaluation of wavelength selectivity is evaluated A when the power generation output / heat flux is more than 40%, evaluation B when it is more than 30% and 40% or less, evaluation C when it is more than 20% and less than 30%, and evaluation C is less than 20%.
  • the case was evaluated as D. The results are shown in Table 2.
  • Example 34 in which the front metal layer was formed in a line shape having a width of 1 mm, the wavelength selectivity was very low.
  • Example 34 in which the thickness of GaSb was less than 50 nm, both output and wavelength selectivity were very low.
  • Example 39 having an opening diameter of less than 300 nm, the power generation output was low.
  • Example 43 in which the aperture diameter exceeded 1000 nm, the power generation output was very low and the wavelength selectivity was also low.
  • Example 44 in which the thickness of the front side metal layer was less than 80 nm, the power generation output was very low. Even in Examples 51 and 52 in which the shape of the opening was rectangular, high power output and wavelength selectivity were obtained.
  • Example 55 having an aperture ratio of less than 30%, the power generation output was very low.
  • the device fabrication method and evaluation method are the same as those in the examples in Table 1.
  • InGaAs was studied as a semiconductor, and Ag, Mo, and W were examined as surface electrode layers. The results are shown in Table 3.
  • the structure of the front metal layer 20 is not limited to a rectangular island pattern or a mesh pattern.
  • the structure of the front metal layer 20 may be, for example, an island shape other than a rectangle (such as a circle or a polygon), or may be an irregular pattern.
  • the following structures were shown as a mesh-shaped pattern (refer FIG. 2). That is, the front-side metal layer 120 has a structure in which a plurality of rectangular openings are arranged vertically and horizontally when viewed from the direction perpendicular to the semiconductor layer 30. Adjacent rectangular openings have their sides facing each other in parallel.
  • the direction in which the vertical and horizontal sides of the opening extend and the direction in which the plurality of openings are aligned are the same direction (both the X direction and the Y direction in the drawing).
  • the part covered with the metal of the surface of the semiconductor layer 30 is extended horizontally and vertically in the shape of a grid.
  • the “mesh pattern” of the present disclosure is not limited to this.
  • the opening may be circular, triangular, or other shape.
  • the arrangement of the openings may not be a structure in which a plurality of openings are arranged in the vertical and horizontal directions (in other words, a structure having an arrangement relationship in which the positions of the openings adjacent in the X direction match in the Y direction).
  • the back side metal layer 40 is a so-called solid pattern
  • the back side metal layer of the present disclosure is not limited to this.
  • the back side metal layer 40 may be a partial pattern such as the front side metal layer 20.
  • the “solid pattern” referred to in this specification includes a state in which a portion that is not covered with metal is present in a very small amount.
  • each block is not particularly limited, and may be a triangle or another polygon instead of a rectangle or square.
  • the semiconductor constituting the semiconductor layer 30 is not limited to GaSb.
  • InAsSbP sensitivity region 2.0 to 3.2 ⁇ m
  • InGaAsP sensitivity region 0.92 to 1.65 ⁇ m
  • InGaAsSb sensitivity region 1. It may be 0 to 2.6 ⁇ m
  • InGaAs sensitivity region 0.9 to 2.6 ⁇ m
  • InAs sensitivity region 1.0 to 3.8 ⁇ m
  • InAsSb sensitivity region 1.0 to 5.0 ⁇ m.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un élément de conversion photoélectrique qui est capable de réfléchir de manière sélective la lumière en raison de la structure de l'élément de conversion photoélectrique lui-même. L'élément de conversion photoélectrique utilise un semi-conducteur pour convertir la lumière en énergie électrique par l'intermédiaire de l'effet photovoltaïque et comporte : une couche semi-conductrice qui comprend un semi-conducteur ; une couche métallique côté avant qui est une couche métallique formée sur la surface de la couche semi-conductrice ; et une couche métallique côté arrière qui est une couche métallique formée sur la surface arrière de la couche semi-conductrice, la couche métallique côté avant, la couche semi-conductrice et la couche métallique côté arrière formant un résonateur ayant une structure MSM.
PCT/JP2019/008198 2018-03-01 2019-03-01 Élément de conversion photoélectrique WO2019168175A1 (fr)

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JP2008300626A (ja) * 2007-05-31 2008-12-11 Tokyo Institute Of Technology 近接場光発電素子および近接場光発電装置
JP2012514322A (ja) * 2008-12-24 2012-06-21 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 非常に薄い半導体領域を有する光検出器

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JP2006501638A (ja) * 2002-07-25 2006-01-12 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 金属電極格子からなるミラーを備えた共鳴キャビティが設けられているｍｓｍタイプの光検出器
JP2008300626A (ja) * 2007-05-31 2008-12-11 Tokyo Institute Of Technology 近接場光発電素子および近接場光発電装置
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