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WO2019030819A1 - Procédé de production de dispositif el - Google Patents

Procédé de production de dispositif el Download PDF

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Publication number
WO2019030819A1
WO2019030819A1 PCT/JP2017/028751 JP2017028751W WO2019030819A1 WO 2019030819 A1 WO2019030819 A1 WO 2019030819A1 JP 2017028751 W JP2017028751 W JP 2017028751W WO 2019030819 A1 WO2019030819 A1 WO 2019030819A1
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WO
WIPO (PCT)
Prior art keywords
irradiation
resin layer
manufacturing
laser
mother substrate
Prior art date
Application number
PCT/JP2017/028751
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English (en)
Japanese (ja)
Inventor
菅　勝行
有希 安田
Original Assignee
シャープ株式会社
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Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to US16/463,012 priority Critical patent/US10693070B2/en
Priority to PCT/JP2017/028751 priority patent/WO2019030819A1/fr
Publication of WO2019030819A1 publication Critical patent/WO2019030819A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
    • Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
    • Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y10T156/1967—Cutting delaminating means

Definitions

  • the present invention relates to an EL device including an EL element (electroluminescence element).
  • a method of manufacturing an EL device is a method of manufacturing an EL device including the step of irradiating a laser and peeling a mother substrate and a laminate including a light emitting element layer, wherein the mother substrate And the laminated body are in contact with each other via the resin layer of the laminated body, and when the resin layer is irradiated with the laser and the peeling is performed, at least a part of the end of the resin layer, The irradiation is performed under conditions different from the central portion of the resin layer.
  • the mother substrate and the resin layer formed over the mother substrate are peeled off, it is possible to suppress a decrease in yield and an increase in manufacturing cost.
  • (A) and (b) is a figure which shows the outline
  • (A)-(c) is a figure which shows the outline
  • (A) and (b) is a figure which shows the outline
  • (A) And (b) is a figure which shows the outline
  • FIG. 1 is a flowchart showing an example of a method of manufacturing an EL device.
  • FIG. 2A is a cross-sectional view showing a configuration example during formation of the EL device of the present embodiment.
  • FIG. 2B is a cross-sectional view showing a configuration example of the EL device of the present embodiment.
  • the resin layer 12 is formed on a translucent mother substrate (for example, a glass substrate) 50 (step S1).
  • the inorganic barrier film 3 is formed (step S2).
  • the TFT layer 4 including the plurality of inorganic insulating films 16 18 20 and the flattening film 21 is formed (step S3).
  • a light emitting element layer for example, an OLED element layer
  • the sealing layer 6 including the inorganic sealing films 26 and 28 and the organic sealing film 27 is formed (step S5).
  • the protective material 9 for example, a PET film
  • step S6 is attached on the sealing layer 6 via the adhesive layer 8 (step S6).
  • the resin layer 12 is irradiated with a laser (step S7).
  • the resin layer 12 absorbs the irradiated laser
  • the lower surface (the interface with the mother substrate 50) of the resin layer 12 is altered by ablation, and the peeling layer 13 (see FIG. 3B described later) is formed.
  • the bonding strength between the resin layer 12 and the mother substrate 50 is reduced.
  • the mother substrate 50 is peeled off from the resin layer 12 (step S8).
  • the laminate 7 and the mother substrate 50 shown in FIG. 2A are peeled off.
  • the laminate 7 refers to the entire multilayer formed on the mother substrate 50, and in the example shown in FIG. 2A, from the resin layer 12 formed on the mother substrate 50, the outermost layer The layer up to the protective material 9 is shown.
  • the method of manufacturing an EL device according to one aspect of the present invention is characterized in particular in steps S7 and S8. Details will be described later.
  • the support material 10 for example, a PET film
  • the mother substrate 50 is divided and the protective material 9 is cut to cut out a plurality of EL devices (step S10).
  • the protective material 9 on the terminal portion of the TFT layer 4 is peeled off, and the terminal is put out (step S11).
  • the EL device 2 shown in FIG. 2B is obtained.
  • the functional film 39 is attached (step S12), and an electronic circuit board is mounted on the terminal portion using an ACF or the like (step S13).
  • the above steps are performed by an EL device manufacturing apparatus.
  • Examples of the material of the resin layer 12 include polyimide, epoxy, polyamide and the like. Among them, polyimide is preferably used.
  • the inorganic barrier film 3 is a film that prevents moisture and impurities from reaching the TFT layer 4 and the light emitting element layer 5 when the EL device is used, and is, for example, a silicon oxide film or a silicon nitride film formed by CVD. Or a silicon oxynitride film, or a laminated film of these.
  • the thickness of the inorganic barrier film 3 is, for example, 50 nm to 1500 nm.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) formed on the upper side of the semiconductor film 15, a gate electrode G formed on the upper side of the gate insulating film 16, and an upper side of the gate electrode G.
  • the semiconductor film 15, the inorganic insulating film 16, the gate electrode G, the inorganic insulating films 18 and 20, the source electrode S and the drain electrode D constitute a thin layer transistor (TFT).
  • a terminal portion including a plurality of terminals TM and a terminal wiring TW used for connection with an electronic circuit board such as an IC chip or FPC is formed.
  • the terminal TM is connected to various wirings of the TFT layer 4 through the terminal wiring TW.
  • the semiconductor film 15 is made of, for example, low temperature polysilicon (LPTS) or an oxide semiconductor.
  • the gate insulating film 16 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
  • the gate electrode G, the source electrode S, the drain electrode D, and the terminals are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper It is comprised by the single layer film or laminated film of the metal containing at least one of Cu).
  • FIG. 2 shows a TFT in which the semiconductor film 15 is a channel in a top gate structure, it may have a bottom gate structure (for example, when the channel of the TFT is an oxide semiconductor).
  • the inorganic insulating films 18 and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
  • the planarizing film 21 is an organic insulating film, and can be made of, for example, a coatable photosensitive organic material such as polyimide or acrylic.
  • the light emitting element layer 5 (for example, an organic light emitting diode layer) is formed in the non-active area NA, the anode electrode 22 formed on the upper side of the planarization film 21, the barrier 23c defining the sub-pixel of the active area DA
  • An anode electrode 22, an EL layer 24, and a cathode electrode 25 are included, including a bank 23b, an EL (electroluminescence) layer 24 formed on the upper side of the anode electrode 22, and a cathode electrode 25 formed on the upper side of the EL layer 24.
  • a light emitting element for example, an organic light emitting diode is configured.
  • the partition wall 23c and the bank 23b can be formed, for example, in the same step, using a coatable photosensitive organic material such as polyimide, epoxy, or acrylic.
  • the banks 23 b of the non-active area NA are formed on the inorganic insulating film 20.
  • the bank 23 b defines the edge of the organic sealing film 27.
  • the EL layer 24 is formed in a region (sub-pixel region) surrounded by the partition wall 23 c by a vapor deposition method or an inkjet method.
  • the light emitting element layer 5 is an organic light emitting diode (OLED) layer
  • the EL layer 24 is formed by sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer from the lower layer side. It is constituted by doing.
  • the anode electrode (anode) 22 is formed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag, and has light reflectivity.
  • the cathode electrode 25 can be made of a transparent metal such as ITO (Indium Tin Oxide) or IZO (Indium Zincum Oxide).
  • the drive current between the anode electrode 22 and the cathode electrode 25 causes holes and electrons to recombine in the EL layer 24 and the exciton generated thereby falls to the ground state, Light is emitted.
  • the light emitting element layer 5 is not limited to forming an OLED element, and may form an inorganic light emitting diode or a quantum dot light emitting diode.
  • the sealing layer 6 includes a first inorganic sealing film 26 covering the partition 23 c and the cathode electrode 25, an organic sealing film 27 covering the first inorganic sealing film 26, and a second inorganic sealing film covering the organic sealing film 27. And a stopper film 28.
  • Each of the first inorganic sealing film 26 and the second inorganic sealing film 28 may be formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by CVD. it can.
  • the organic sealing film 27 is a translucent organic insulating film thicker than the first inorganic sealing film 26 and the second inorganic sealing film 28, and is made of a photosensitive organic material that can be coated, such as polyimide or acrylic. can do.
  • an ink containing such an organic material is inkjet-coated on the first inorganic sealing film 26 and then cured by UV irradiation.
  • the sealing layer 6 covers the light emitting element layer 5 and prevents the penetration of foreign matter such as water and oxygen into the light emitting element layer 5.
  • the protective material 9 is attached on the sealing layer 6 through the adhesive layer 8 and functions as a support when the mother substrate 50 is peeled off.
  • Examples of the material of the protective material 9 include PET (polyethylene terephthalate).
  • the support material 10 is for producing an EL device excellent in flexibility by peeling off the mother substrate 50 and then attaching it to the lower surface of the resin layer 12, and the material is, for example, polyethylene terephthalate (PET). Etc.
  • PET polyethylene terephthalate
  • the functional film has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
  • the electronic circuit board is, for example, an IC chip or a flexible printed board mounted on a plurality of terminals TM.
  • Step 7 laser irradiation
  • step 8 peeling of the mother substrate
  • FIG. 3 shows the configuration example of the configuration during formation of the EL device of this embodiment, (a) shows the state before step 7, and (b) shows the state of step 7. State (c) shows the state of step 8.
  • an EL layer is formed on a mother substrate 50.
  • the EL layer and the like are not described in detail, and only the mother substrate 50, the resin layer 12, the second inorganic sealing film 28, and the protective material 9 in FIG. 2A are described.
  • the resin layer 12 is formed on the mother substrate 50, and the EL layer or the like (not shown) formed on the layer is formed.
  • the protective material 9 is formed on the outermost surface.
  • Step 7 is a step of irradiating the resin layer 12 with a laser as a step prior to peeling the resin layer 12 from the mother substrate 50 as described based on FIG. 1.
  • step 7 is performed by irradiating the laser 62 in the direction of the protective material 9 from the lower side of the mother substrate 50.
  • the resin layer 12 such as polyimide is often not completely peeled off from the mother substrate 50 made of a glass substrate or the like.
  • peeling of the laminate 7 from the mother substrate 50 using the knife 70 is performed as an additional process (step 8).
  • a process of inserting the knife 70 between the mother substrate 50 and the resin layer 12 from the lateral direction (direction close to parallel to the surface of the mother substrate 50) is shown.
  • FIG. 4 and FIG. 5 are diagrams showing a partial outline of the LLO processing, and both FIG. 4 and FIG. 5 show the state after step 7 in (a) and the state in step 8 (b).
  • the laser irradiation in step 7 generates ash 84 between the mother substrate 50 and the resin layer 12.
  • the amount of ash 84 generated increases as the laser irradiation conditions become stronger.
  • FIG. 4 (a) shows the case where the laser irradiation condition is 200 mJ / cm 2 and the overlap 50%
  • FIG. 5 (a) shows the case where the irradiation condition is 240 mJ / cm 2 and the overlap 50%. It shows.
  • the amount of generated ash 84 is larger in the example shown in FIG. 5 (a) than in the example shown in FIG. 4 (a).
  • the amount of ash 84 generated between the mother substrate 50 and the resin layer 12 is increased, peeling of the resin layer 12 from the mother substrate 50 is facilitated.
  • a large amount of generated ash contaminates the inside of the apparatus and the inside of the clean room at the time of peeling and transportation, which causes a decrease in yield.
  • the peeling process is performed by strong energy irradiation, the resin layer and the OLED layer over the resin layer may be indirectly damaged, and the display characteristics and the like may be deteriorated.
  • the separation between the mother substrate 50 and the resin layer 12 is not sufficient. That is, as shown by dotted-line enclosure a in FIG. 4A, a portion where the end of the resin layer 12 remains attached to the mother substrate 50 tends to remain. Therefore, the knife 70 slips easily on the resin layer 12 in step 8 and the peeling of the resin layer 12 from the mother substrate 50 tends to be defective.
  • the ash 84 is a black foreign matter, it may be easily separated and scattered from the resin layer and contaminate the inside of the apparatus or the clean room, it is necessary to suppress the generation as much as possible. Further, in order to suppress the influence on the display performance, it is preferable that the irradiation energy to the display area be as small as possible.
  • step 7 and step 6 are performed as follows.
  • FIG. 6 is a cross-sectional view showing a configuration example during formation of the EL device of the present embodiment, and FIGS. 6 (a) and 6 (b) show the state of step 7 and FIG. It shows the state.
  • the irradiation conditions of the laser in step 7 are made different between the inclined area I and the flat area II of the laminate 7.
  • the sloped region I is a region from where the thickness of the resin layer 12 starts to decrease to when the resin layer 12 disappears, as described above based on FIG. It corresponds.
  • the flat region II is a region in which the thickness of the resin layer 12 is constant, and includes the central portion (dotted line c in FIG. 6A) of the laminate 7.
  • the flat region II mainly corresponds to a portion used as a display material
  • the inclined region I mainly corresponds to an end portion used for peeling of the laminate 7.
  • the entire region (the inclined region I and the flat region II) of the laminate 7 is irradiated with a laser at the substrate center optimum condition, and then the inclined region I of the laminate 7 is irradiated with a laser at ash generation conditions.
  • the inclined region I is more strongly laser irradiated than the flat region II.
  • the substrate center optimum condition is 200 mJ / cm 2
  • the overlap 50% see FIG. 4
  • the ash generation condition is 240 mJ / cm 2
  • the overlap 50% See).
  • the laser beam irradiation is performed twice by scanning the line beam 62 (1) twice with respect to the stacked body 7. Then, the irradiation condition and the irradiation range are made different between the first laser irradiation and the second laser irradiation.
  • FIG. 6A shows an outline of the first laser irradiation. While scanning the line beam 62 (1) in the longitudinal direction of the mother substrate 50 (open arrows), the entire surface of the laminate 7 is irradiated with a laser.
  • the laser irradiation condition (irradiation condition 1 (irradiation condition of the first laser irradiation)) at the time of scanning is set as the substrate central portion optimum condition, and the irradiation condition is constant during the scanning. Under this irradiation condition, although ash is generated between the laminate 7 and the mother substrate 50, it is not an amount that impairs the use of the laminate 7 as a display material.
  • FIGS. 6 (b) and 6 (c) indicate the image of the irradiation unit when the laser is irradiated while scanning the line beam 62 (1). ing. The same applies to other similar figures (FIGS. 6 (b) and 6 (c), FIGS. 7 (a) and 7 (b), FIGS. 8 (a) and 8 (b), 9). It is.
  • the laser conditions for irradiating the inclined region I may be such that the total irradiation energy is stronger than the flat region II. That is, if the laser is also applied to the inclined region I at the time of the first irradiation to irradiate the flattened region II, the total energy applied to the inclined region I is lower than the energy at the first irradiation. As a result, the laser irradiation is stronger in the inclined region I than in the planarized region II.
  • FIG. 6 (b) shows an outline of the second laser irradiation.
  • the second laser irradiation differs from the first laser irradiation in the laser irradiation conditions. Specifically, the second irradiation condition of the laser (the irradiation condition 2 (the irradiation condition of the second laser irradiation)) is made stronger than the irradiation condition 1.
  • the irradiation condition 2 can be set as the ash generation condition.
  • the ash generation condition is equivalent to the optimum condition at the central portion of the substrate, although the overlap is equal, but the energy is large, and as a result, the irradiation condition of the laser is strong.
  • the method of making the irradiation condition 2 stronger than the irradiation condition 1 is not limited to the above, and, for example, the irradiation condition of the laser can also be strengthened by increasing the overlap.
  • the second laser irradiation differs from the first laser irradiation in the irradiation range of the laser.
  • the entire surface of the laminate 7 is irradiated with the laser, while in the second laser irradiation, the laser is irradiated only to the inclined region I of the laminate 7.
  • the line beam 62 (1) scans in the longitudinal direction X of the mother substrate 50 (open arrow) as with the first laser irradiation (open arrow), but only when the laser passes through the inclined region I. Irradiated.
  • the scanning direction is not limited to the + direction of X, and may be the ⁇ direction of X that is the opposite direction of the white arrow.
  • the entire (inclination region I + flat region II) of the laminate 7 is irradiated with laser under a condition with little ash, and then there is a large amount of ash only in the end (inclination region I).
  • the laser irradiation is performed under the condition that the resin layer 12 easily peels off the mother substrate 50.
  • step 8 is performed using a knife 70.
  • a large amount of ash 84 is generated between the resin layer 12 and the mother substrate 50, and the resin layer 12 and the mother substrate 50 are easily peeled off. Therefore, the knife 70 is inserted into the four corners (included in the inclined region I) of the laminate 7 and, for example, as shown by the outlined arrows in FIG. Can be easily peeled off from the mother substrate 50.
  • the laminated body 7 can be peeled off with the mother substrate 50 in a state where the protective material 9 which is easily peeled off is adhered to the sealing layer 6 because it is slightly adhesive.
  • the peeled laminate 7 can be favorably used as a display material.
  • FIGS. 7 (a) and 7 (b) are diagrams showing an outline of step 7 of the present embodiment, where (a) is an outline of the first laser irradiation of step 7, and (b) is an illustration of step 7. The outline of the second laser irradiation is shown.
  • the difference between the first embodiment and the second embodiment is that the laser 62 used for the second laser irradiation is different.
  • both the first laser irradiation and the second laser irradiation use the line beam 62 (1).
  • the second laser irradiation uses the Gaussian beam 62 (2) using the galvano optical system.
  • the first laser irradiation scans the line beam 62 (1) in the longitudinal direction X of the mother substrate 50 (open arrow) to the entire laminate 7. Irradiate the laser.
  • the irradiation condition of the laser is set to the aforementioned irradiation condition 1.
  • a Gaussian beam is irradiated to each inclined region I located at both ends of the laminate 7 in the longitudinal direction X.
  • the Gaussian beam is scanned (arc arrow) with a galvano optical system (galvano scanner).
  • the irradiation condition is a condition stronger than the irradiation condition 1, for example, the irradiation condition 2.
  • the irradiation conditions of the second laser irradiation do not require as high precision as the irradiation conditions of the first laser irradiation. This is because the laser is irradiated by the first laser irradiation once, and the conditions of the laser are further irradiated to further promote the peeling of the mother substrate 50 and the laminate 7.
  • the manufacturing apparatus can be configured at low cost by using the second laser irradiation instead of the line beam 62 (1), for example, scanning with a Gaussian beam by a galvano scanner, and the processing capacity can be improved. be able to.
  • FIGS. 8 (a) and 8 (b) show an outline of step 8 of the present embodiment, where (a) shows the insertion of the knife 70 and (b) shows an outline of peeling of the laminate 7. ing.
  • the difference between the first embodiment and the third embodiment is the number of sides on which the peeling process is performed using the knife 70 in step S8.
  • the peeling process with the knife 70 is performed on all four sides of the mother substrate 50.
  • peeling of the laminate 7 from the mother substrate 50 using the knife 70 is performed only on one side (one short side of the laminate 7) in the longitudinal direction X of the mother substrate 50 (see FIG. 8 (a).
  • the knife 70 is inserted at the end of one short side of the laminate 7 subjected to the laser irradiation under the irradiation condition 2 described above, and the knife 70 is slid in the Y direction. Let it go (white arrow).
  • the laminate 7 is peeled off from the mother substrate 50 starting from the part peeled off in FIG. 8A (open arrow).
  • the knife 70 can be inserted between the laminate 7 and the mother substrate 50, it is possible to peel off the entire laminate 7 from the mother substrate 50 triggered by the insertion of the knife 70.
  • the amount of work using the knife 70 can be reduced to about 1 ⁇ 4, and the processing capacity can be improved.
  • the laser irradiation to the laminate 7 under the irradiation condition 2 can be performed on only one side where peeling with the knife 70 is performed.
  • FIG. 9 is a diagram showing an outline of step 7 of the present embodiment.
  • the difference between the first embodiment and the fourth embodiment is the portion irradiated with the laser under the irradiation condition 2 in step 7.
  • the laser irradiation under the irradiation condition 2 is performed on the both-end inclined region I of the laminate 7 in the longitudinal direction X of the mother substrate 50.
  • the laser irradiation under the irradiation condition 2 is performed on the four end sides of the laminate 7. That is, in addition to the longitudinal direction X of the mother substrate 50, the laser irradiation under the irradiation condition 2 is performed also to the both-end inclined region I in the short direction Y.
  • the laminate 7 can be peeled off from the mother substrate 50 without using the knife 70.
  • the number of sides to be irradiated with the laser can be changed under the irradiation condition 2 by adjusting the irradiation condition of the laser, such as making the irradiation condition 2 stronger.
  • the irradiation conditions of the laser are defined using energy (mJ / cm 2 ) and overlap (%).
  • the irradiation conditions (intensity) of the laser can be determined other than these.
  • the irradiation conditions of the laser can be determined by the beam profile such as the beam shape (line, spot, etc.), the wavelength, the number of times of irradiation, and the like.
  • the irradiation conditions of the laser can be determined while optimizing the laser depth to the resin layer 12 made of polyimide or the like, the transmittance of the laser to the mother substrate 50 made of glass or the like, and the like.
  • an excimer laser of 308 nm, a solid laser of 343 nm or 355 nm, a spot laser of 355 nm, a line laser of 343 nm or the like in relation to the laser shape can be used as appropriate.
  • the range of the laser irradiation under the irradiation condition 2 does not necessarily coincide with the inclined region I.
  • the film thickness and the shape may be changed rapidly. This portion is because a large amount of energy is often required to peel the resin layer 12 from the mother substrate 50.
  • the range which irradiates a laser on the said irradiation conditions 2 can also be limited to the part which inserts the knife 70 initially. That is, the range may be a point instead of a side. In such a case, a carbano optical system laser can be suitably used.
  • the range which irradiates a laser on the said irradiation conditions 2 can also be determined using a sensor.
  • a change in thickness of the resin layer 12 or the end face of the laminate 7 may be detected by a sensor, and the range of the laser irradiation may be appropriately determined.
  • a method of manufacturing an EL device according to aspect 1 of the present invention is a method of manufacturing an EL device including the step of irradiating a laser and peeling the mother substrate and the laminate including the light emitting element layer, wherein the mother substrate And the laminated body are in contact with each other via the resin layer of the laminated body, and when the resin layer is irradiated with the laser and the peeling is performed, at least a part of the end of the resin layer, The irradiation is performed under conditions different from the central portion of the resin layer.
  • the irradiation is performed on at least a part of the end under the condition stronger than the central part.
  • the method of manufacturing an EL device according to aspect 3 of the present invention performs the irradiation on the at least part of the end more times than the central part.
  • the irradiation is performed using a line beam.
  • the irradiation is performed a plurality of times using a line beam, and at least one of the plurality of times the irradiation is performed on the entire surface of the resin layer; The irradiation is performed only on the end at least once in a cycle.
  • the irradiation is performed using a line beam and a Gaussian beam, the entire surface of the resin layer is irradiated using the line beam, and the Gaussian beam is used. The irradiation is performed only on the end.
  • the end portion includes at least one side of an end side of the resin layer.
  • the end portion is a portion where the film thickness of the resin layer decreases.
  • the peeling is performed by inserting a knife at the end after the irradiation.
  • the knife is slid along the inserted end.
  • the peeling is performed by inserting a knife into the end after the irradiation corresponding to one edge of the resin layer, and after the insertion, the peeling is performed. Slide the knife along the inserted end.
  • the method of manufacturing an EL device according to aspect 12 of the present invention performs the peeling from the end where the knife is inserted as a starting point.
  • the energy of the laser is higher than the condition of performing the irradiation on the central portion under the condition of performing the irradiation on at least a part of the end portion. large.
  • the condition for performing the irradiation on at least a part of the end portion is the overlap of the laser compared to the condition for performing the irradiation on the central portion Is large.
  • the amount of ash between the mother substrate and the laminate after the irradiation is larger at the end portion than at the central portion.
  • the resin layer and the mother substrate are peeled off at the end after the irradiation.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un procédé de production de dispositif EL (2), comprenant l'étape consistant à utiliser l'émission d'un laser (62) de façon à détacher un substrat mère (50) et un corps stratifié (7) comprenant une couche d'élément électroluminescent (5), le substrat mère (50) et le corps stratifié (7) étant en contact l'un avec l'autre par le biais d'une couche de résine (12) du corps stratifié (7), et le détachement par émission du laser (60) sur la couche de résine (12) étant réalisé de telle sorte que l'émission sur au moins une partie des sections de bord de la couche de résine (12) est menée dans des conditions différentes de celles concernant la section centrale de la couche de résine (12).
PCT/JP2017/028751 2017-08-08 2017-08-08 Procédé de production de dispositif el WO2019030819A1 (fr)

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