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WO2018139172A1 - Dispositif et procédé de conversion d'énergie - Google Patents

Dispositif et procédé de conversion d'énergie Download PDF

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Publication number
WO2018139172A1
WO2018139172A1 PCT/JP2017/047397 JP2017047397W WO2018139172A1 WO 2018139172 A1 WO2018139172 A1 WO 2018139172A1 JP 2017047397 W JP2017047397 W JP 2017047397W WO 2018139172 A1 WO2018139172 A1 WO 2018139172A1
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WO
WIPO (PCT)
Prior art keywords
power
voltage
sic
power semiconductor
power conversion
Prior art date
Application number
PCT/JP2017/047397
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English (en)
Japanese (ja)
Inventor
秋山　悟
石川　勝美
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株式会社日立製作所
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Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP2018564449A priority Critical patent/JPWO2018139172A1/ja
Publication of WO2018139172A1 publication Critical patent/WO2018139172A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC
    • H02M5/42—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters
    • H02M5/44—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC
    • H02M5/453—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M5/4585—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power conversion control technology, for example, a power conversion device and a power conversion method for a railway vehicle.
  • Patent Document 2 discloses a power semiconductor package in which two power semiconductors each having a switching transistor using silicon carbide (SiC) and a reflux diode are connected in series, and a positive side element and a negative side of each phase.
  • SiC silicon carbide
  • a VVVF inverter is disclosed which uses one for each element.
  • the power semiconductor In the inverter in the railway field, a power semiconductor having a withstand voltage characteristic of 3300 V, which is more than twice the overhead voltage (DC 1500 V), is used because it is necessary to withstand a surge voltage at the time of switching.
  • the power semiconductor refers to a power transistor that is a transistor and a power diode that is a diode.
  • an object of the present invention is to provide a power conversion device with low power loss while using a power semiconductor made of SiC.
  • the present inventor has found that even if the withstand voltage characteristic of the SiC power semiconductor is lowered, the surge voltage at the time of switching can be suppressed while reducing the power loss by adjusting the switching speed of the power transistor.
  • the present invention provides a voltage withstand voltage characteristic even if the withstand voltage of the SiC power semiconductor of the power converter is up to twice the reference voltage.
  • the SiC power transistor was switched so that a voltage exceeding 1 m was not applied.
  • the SiC power transistor of the power converter even if the withstand voltage of the SiC power semiconductor of the power converter is up to twice the reference voltage as a control method of the SiC power transistor of the power converter, The SiC power transistor was switched so that a voltage exceeding the voltage was not applied.
  • the external appearance of the power converter device by 1st Embodiment is shown.
  • the external appearance of the power converter device by 2nd Embodiment is shown.
  • the constituent elements are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.
  • the shapes, positional relationships, etc. of the components, etc. when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to numerical values and ranges.
  • reference numeral 1 denotes a power converter that performs DC / AC conversion according to this embodiment as a whole.
  • the power conversion device 1 includes elements A, B, and C that are power semiconductors, a filter capacitor FC, and a control device 5.
  • the elements A, B, and C are controlled by a control device 5 that is a circuit for driving a power semiconductor.
  • the power conversion device 1 includes an overhead wire PAN, a ground switch GS, main motors MM1, MM2, MM3, MM4 serving as a power source for driving a railway vehicle carriage, a main switch MS, a high speed
  • the circuit breaker HB, the circuit breakers LB1, LB2, and the filter resistor FL that blocks the noise current and the charging resistor CHR used when the filter capacitor FC is charged are connected.
  • a voltage of 1.5 kV is applied to the overhead line PAN, the main switch MS is used to electrically disconnect the power converter 1 and the like from the overhead line PAN, and the ground switch GS is connected to the ground side and the power converter 1. Used to electrically disconnect
  • the high-speed circuit breaker HB cuts off the accident current flowing from the power converter 1 to the overhead line PAN when an accident occurs in the power converter 1. Further, the circuit breaker LB1 is opened when the power conversion device 1 malfunctions, and the circuit breaker LB2 is opened when the filter capacitor FC is charged.
  • the filter capacitor FC is applied with a DC voltage of 1.5 kV, which is the same as the overhead line voltage, and the withstand voltages of the elements A, B and C are higher than 1.5 kV and lower than twice 1.5 kV, 1.5 kV. For example, 2.5 kV with a margin of about 10% to 1.5 times.
  • the withstand voltage of a semiconductor element is It is required as follows. Conventionally, the instantaneous maximum voltage expectation rate was doubled, but by withstanding 1.5 times, the withstand voltage can be calculated as 2.5 kV. Moreover, you may estimate with 3 kV, without applying a safety factor.
  • Elements A, B, and C correspond to the U-phase, V-phase, and W-phase, respectively, of three-phase alternating current.
  • the parasitic inductance of the element A is L up and L un
  • the parasitic inductance of the element B is L vp and L vn
  • the parasitic inductance of the element C is L wp and L wn
  • the inductance of the power conversion device 1 is L sp and L sn .
  • the elements A, B, and C include the element component 10 shown in FIG.
  • the element component 10 includes an SiC-MOSFET 11 which is a MOSFET (metal-oxide-semiconductor field-effect transistor) made of silicon carbide (SiC) and an SiC-SBD 12 which is an SBD made of silicon carbide (SiC).
  • the element component 10 is included in one package.
  • FIG. 3 shows the SiC-MOSFET 11 as a switching element
  • FIG. 3 (A) is a plan view seen from above
  • FIG. 3 (B) is a cross-sectional view along A-A ′.
  • the outer shape of the SiC-MOSFET 11 is rectangular, but it may be square.
  • the gate electrode GPm and the source electrode SPm are arranged on the upper surface of the chip of the SiC-MOSFET 11 in an electrically insulated state.
  • the drain electrode DRm is disposed on the lower surface of the chip of the SiC-MOSFET 11 to form the three terminals of the gate, source and drain of the SiC-MOSFET 11.
  • each electrode of the source electrode SPm, the gate electrode GPm, and the drain electrode DRm is connected to each electrode pad through a metal wiring layer.
  • the active element 15 is disposed under the source electrode SPm.
  • the active element 15 is arranged at the position of line AA ′ in FIG.
  • the source layer N + of the active element 15 is an n + type region and is connected to the source electrode SPm.
  • the source layer N + of the active element 15 is connected to the drift layer DFT via the junction region JFT.
  • the junction region JFT is a channel formed in the base layer P that is a p-type region immediately below the oxide film Tox when a positive voltage is applied to the gate electrode GPm.
  • the oxide film Tox is formed under the gate electrode GPm.
  • the drift layer DFT is an n ⁇ -type region and plays a role of ensuring the withstand voltage of the elements A, B, and C.
  • the substrate SUB is an n + type region disposed under the drift layer DFT, and is connected to the drain electrode DRm.
  • the drift layer thickness tDRT which is the thickness of the drift layer DFT, is about 30 ⁇ m. By securing this thickness, the withstand voltage of the elements A, B, and C is 3.3 kV. Is secured.
  • this withstand voltage takes into account conduction loss caused by channel resistance Rch, junction region resistance Rjfet, and drift resistance Rdft, which are internal resistances of elements A, B, and C when energizing elements A, B, and C. Designed.
  • the channel resistance Rch, the junction region resistance Rjfet, and the drift resistance Rdft are the resistances of the base layer P, the junction region JFT, and the drift layer DFT other than the junction region JFT, respectively.
  • the ratio of the internal resistance to the internal resistance is the largest for the drift resistance Rdft and the greatest influence on the value of the conduction loss. Therefore, in the present invention, by reducing the resistance value of the drift resistor Rdft and reducing the conduction loss, the amount of heat generated by the conduction loss can also be reduced, and the cooler for cooling the heat can be downsized. it can. Needless to say, downsizing of the cooler leads to downsizing of the power converter 1.
  • the drift layer film thickness tDRT is made thinner than 30 ⁇ m, and the impurity concentration of the drift layer DFT is made smaller than 3 ⁇ 10 ⁇ 15 cm ⁇ 3 .
  • FIG. 4 shows a SiC-SBD 12 which is a reflux diode
  • FIG. 4 (A) is a plan view seen from above
  • FIG. 4 (B) is a cross-sectional view along A-A ′.
  • the SiC-SBD 12 includes an anode electrode pad AP, a substrate SUBd, a drift layer DFTd, an active region ACTd, a termination region TMd, a channel stop region CHSTPd, a surface electrode IL1, a stop region electrode IL2, a passivation film IL3, and a back surface.
  • An electrode Cathode is provided.
  • SiC-SBD 12 which is a free-wheeling diode
  • an n + -type substrate SUBd is disposed on the back electrode Cathode
  • an n ⁇ -type drift layer DFTd is formed on the substrate SUBd.
  • p + type and p type termination regions TMd, p + type active regions ACTd, and n + type channel stop regions CHSTPd that protect the surface electrode IL1 and the passivation film IL3 are formed. ing.
  • the surface electrode IL1 is formed on the p + type termination region TMd
  • the passivation film IL3 is formed on the termination region TMd and the channel stop region CHSTPd, and on the channel stop region CHSTPd, A stop region electrode IL2 connected to the channel stop region CHSTPd is formed.
  • the active region ACTd at the center of the SiC-SBD 12 has a so-called JBS (Junction Barrier Schottky) structure in which p + regions and n ⁇ regions are alternately formed, and is a structure for securing a withstand voltage. Junction Termination Extension) structure.
  • JBS Joint Barrier Schottky
  • the drift layer thickness tDRTd which is the thickness of the drift layer DFTd, is about 30 ⁇ m.
  • the withstand voltage of the elements A, B, and C is 3.3 kV. Is secured.
  • the drift layer film thickness tDRTd is made thinner than 30 ⁇ m, and the impurity concentration of the drift layer DFTd is made smaller than 3 ⁇ 10 ⁇ 15 cm ⁇ 3 .
  • the individual functions of the respective parts of the SiC-SBD 12 are for realizing a general rectifying element, and thus description thereof is omitted here.
  • the drift layer thickness tDRT of the power transistor When the withstand voltage of the elements A, B, and C is 2.5 kV, it is realized by setting the drift layer thickness tDRT of the power transistor to 15 ⁇ m or less and the drift layer thickness tDRTd of the power diode to 15 ⁇ m or less. To do.
  • FIG. 5 shows an external view of the power conversion device 1.
  • a three-phase high side hereinafter referred to as an upper arm side
  • a low side hereinafter referred to as an upper arm side
  • a large-sized cooler for attaching six power semiconductors to one metal plate hereinafter referred to as a heat block
  • a heat block for attaching six power semiconductors to one metal plate (hereinafter referred to as a heat block) and further performing heat block cooling on the heat block is provided. It is installed.
  • the power semiconductor refers to a unit including a certain number of chips such as 20, for example. Also, for use in power conversion devices for railway vehicles, it is assumed that the rated current is for one phase and a power semiconductor of 600A to 1200A.
  • a large cooler is installed in the power conversion device, and the power conversion device occupies a certain ratio in the railway vehicle, so there is no room in the space of the railway vehicle, for example, installation of new equipment such as a storage battery, etc. I can't. If there is enough space in the railway vehicle, new equipment can be installed to save energy in the railway vehicle.
  • the depth of the cooler is half of the conventional length.
  • the element A can be divided into the element A1 and the element A2 as in the past, with the element component 10 as a minimum unit.
  • the element B can be divided into an element B1 and an element B2, and the element C can be divided into an element C1 and an element C2.
  • FIG. 5A shows that the height HHP1 and width WHP1 of the cooler are not different from the conventional length, but the depth LHP1 of the cooler is about half of the conventional length.
  • the arrangement of the heat block and the elements A1, A2, B1, B2, C1, and C2 has not been changed conventionally.
  • the height direction of the cooler is the height direction of the railway vehicle
  • the width direction is the traveling direction of the railway vehicle which is the rail direction of the railroad
  • the depth direction is the width of the railcar which is the sleeper direction of the railroad.
  • the arrangement of the elements A1, A2, B1, B2, C1, and C2 is changed, and the ratio of the height HHP2 and the width WHP2 of the cooler is reversed from that in FIG. Also good. Furthermore, if the volume of the cooler is such that each part of the power conversion device 1 can be cooled to the heat resistant temperature, the volume of the cooler may be reduced to the minimum necessary.
  • the cooler is a heat pipe type using a refrigerant, but since the calorific value is smaller than that of the conventional one, an aluminum heat sink type having a low cost but a low cooling capacity may be used.
  • the drift layer film thickness tDRT is made thinner than before, or the impurity concentration of the drift layer DFT is made smaller than before.
  • the withstand voltage of the elements A, B, and C can be made lower than twice the overhead line voltage, and the depth of the cooler can be reduced to about half.
  • the volume of the cooler can be halved by using a power semiconductor having a lower withstand voltage than before, and the power converter 1 can be miniaturized.
  • the arrangement of the elements A1, A2, B1, B2, C1, and C2 it is possible to cope with installation of various vehicles under the floor.
  • the number of power semiconductors is six as usual, but as shown in FIG. 6, the number of power semiconductors is three per phase. It is good.
  • the elements A, B, and C are of a so-called 2-in-1 type.
  • the number of chips required for one phase is 40, which is two power semiconductors in the first embodiment, whereas in this embodiment, the number of chips is 20 by using a 2-in-1 type power semiconductor. It can be a piece.
  • the cooling performance of the cooler needs to be as usual, and the volume of the cooler is as usual.
  • the loop area is reduced because the components are arranged in a concentrated manner, the parasitic inductance per power semiconductor is reduced to about 10 nH, and the instantaneous maximum voltage (hereinafter, referred to as the power semiconductor switching operation) (Surge voltage) is reduced, and the withstand voltage of the power semiconductor can be reduced.
  • the power semiconductor switching operation the instantaneous maximum voltage (hereinafter, referred to as the power semiconductor switching operation) (Surge voltage) is reduced, and the withstand voltage of the power semiconductor can be reduced.
  • the power converter 1 can be miniaturized even if the volume of the cooler is the same as before.
  • the elements A, B, and C may be arranged in the height direction of the cooler as shown in FIG. 6A or in the width direction of the cooler as shown in FIG. 6B.
  • the power converter 1 can be reduced in size by using a 2-in-1 power semiconductor.
  • the arrangement of the elements A, B, and C it is possible to cope with installation of various vehicles under the floor.
  • the switching operation of the power transistor is performed as shown by the dotted line in FIG. 7 as before, but as indicated by the solid line in FIG. It is good also as an operation
  • the switching operation includes a turn-on operation in which the switch in the power transistor is turned on to make the power transistor conductive, and a turn-off operation in which the switch is turned off.
  • the control device 5 controls the switching operation of the elements A, B, and C by changing the gate-source voltage V GS as shown in FIG. 7A, for example.
  • a turn-on operation is performed in which the gate-emitter voltage V GE is changed from the negative standby voltage ⁇ V KK to the drive voltage V PP .
  • the collector-emitter voltage V CE lowers from the high potential side voltage V CC to the voltage V ON when the switch ON.
  • the collector current I C rises until the switch current I SW is the rated current of 0A.
  • bipolar pn diode uses a power semiconductor that is used as a freewheeling diode, since the recovery current is superimposed, the collector current I C is instantaneously large current flows (hereinafter, maximum instantaneous In some cases, the rated current capacity of the power semiconductor is exceeded, and the power semiconductor generates heat with an unexpected amount of heat.
  • the gate-emitter voltage V GE transitions from the drive voltage V PP to the standby voltage ⁇ V KK .
  • the collector-emitter voltage V CE transitions from voltage V ON at switch ON to the high potential side voltage V CC, the collector current I C is to 0A from the switch current I SW descend.
  • turn-off loss E OFF that is a power loss during the turn-off operation is larger than the turn-on loss E ON that is a power loss during the turn-on operation.
  • turn-off loss E OFF and turn-on loss E ON is part of the conduction losses.
  • the gate-emitter voltage during the turn-off operation is effective.
  • the transition time from the drive voltage V PP of the gate-emitter voltage V GE to the standby voltage ⁇ V KK during the turn-off operation is shortened, an instantaneous maximum voltage is generated in the collector-emitter voltage V CE , and the power semiconductor It was necessary to increase the withstand voltage.
  • the transition time between the turn-on operation and the turn-off operation is lengthened. In practice, the operation is as shown in FIGS.
  • FIG. 7A shows the transition of the gate-source voltage V GS over time in the MOSFET switching operation.
  • IGBT Insulated Gate Bipolar Transistor
  • FIG. 7B shows the transition of the drain-source voltage VDS with time in the switching operation of the MOSFET.
  • IGBT Insulated Gate Bipolar Transistor
  • FIG. 7 (C) shows changes with time of the drain current I D in the switching operation of the MOSFET.
  • IGBT Insulated Gate Bipolar Transistor
  • FIG. 7D shows a switching loss that is a power loss in the switching operation of the MOSFET.
  • the switching loss includes a turn-on loss E ON at turn-on and a turn-off loss E OFF at turn-off.
  • the switching loss is energy, and the portion where the current and voltage overlap as shown in FIG. Note that as shown in FIG. 7D, if the internal resistance that is part of the conduction loss is small, the power loss can be reduced.
  • control is performed so as to increase the transition time of the gate-source voltage V GS .
  • This increases the transition time of the drain-source voltage VDS and the drain current ID .
  • the speed of the switching operation is slow, it is possible to suppress the instantaneous maximum voltage of the drain-source voltage V DS. Therefore, the withstand voltage of the power semiconductor can be minimized.
  • the instantaneous maximum voltage expectation rate in the equation (1) can be about 1.2 times, and the withstand voltage of the power semiconductor can be reduced to about 2.0 kV.
  • the element made of SiC is a unipolar element, there is no superposition of the recovery current at the turn-on that occurs in the IGBT element, so that the instantaneous maximum current at the turn-on is small and the turn-on loss E ON can be reduced.
  • the transition time from the driving voltage V PP of the gate-source voltage V GS to the standby voltage ⁇ V KK during the turn-off operation can be made shorter than before, and the instantaneous maximum voltage in the drain-source voltage V DS can be reduced. Can be suppressed small, and the withstand voltage of the power semiconductor can be reduced.
  • the volume of the cooler of the power converter 1 can be reduced, and the power converter 1 can be downsized.
  • the power semiconductor includes the SiC-MOSFET 11 and the SiC-SBD 12 in this embodiment. However, the power semiconductor does not need to include the SiC-MOSFET 11 and the SiC-SBD 12.
  • the power conversion device 1 is a device that converts DC power into AC power. However, as shown in FIG. It is good also as an apparatus which pressure
  • the power conversion device 2 shown in FIG. 8 has a configuration in which a full-bridge converter 20 including elements D and E is further added to the power conversion device 1, and a control device 21 that is a circuit for driving a power semiconductor or the like is used as an element. A to E are controlled.
  • the full-bridge converter 20 is installed between the power converter 1 and the overhead line ACPAN to which an alternating voltage of 20 kV or 25 kV is applied.
  • the overhead line ACPAN and the full-bridge converter 20 are connected via the main transformer MTR. ing.
  • the full-bridge converter 20 also changes the volume of the cooler, changes the number of necessary power semiconductors, and slows the switching operation speed. Thus, the size can be reduced.
  • a power converter used for a railway vehicle has been described as an example.
  • the present invention is not limited to this and is also applied to a wind power generation system, a solar power generation system, and the like. be able to.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

Un transistor de puissance SiC est conçu pour effectuer une opération de commutation de telle sorte qu'une tension dépassant celle des caractéristiques de tension de tenue n'est pas appliquée même lorsque la limite supérieure de la tension de tenue d'un semi-conducteur de puissance SiC d'un dispositif de conversion de puissance est réglée à deux fois la tension de référence.
PCT/JP2017/047397 2017-01-25 2017-12-28 Dispositif et procédé de conversion d'énergie WO2018139172A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220181957A1 (en) * 2019-03-13 2022-06-09 Safran System configured to deliver a polyphase current of constant frequency from a synchronous generator
US11923716B2 (en) 2019-09-13 2024-03-05 Milwaukee Electric Tool Corporation Power converters with wide bandgap semiconductors

Citations (3)

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