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WO2018138370A1 - Composant semi-conducteur comprenant une puce semi-conductrice - Google Patents

Composant semi-conducteur comprenant une puce semi-conductrice Download PDF

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Publication number
WO2018138370A1
WO2018138370A1 PCT/EP2018/052198 EP2018052198W WO2018138370A1 WO 2018138370 A1 WO2018138370 A1 WO 2018138370A1 EP 2018052198 W EP2018052198 W EP 2018052198W WO 2018138370 A1 WO2018138370 A1 WO 2018138370A1
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WO
WIPO (PCT)
Prior art keywords
layer
semiconductor
semiconductor chip
radiation
conversion element
Prior art date
Application number
PCT/EP2018/052198
Other languages
German (de)
English (en)
Inventor
Luca HAIBERGER
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2018138370A1 publication Critical patent/WO2018138370A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the invention relates to a semiconductor component with a semiconductor chip and to a method for producing a semiconductor component.
  • a semiconductor device with a semiconductor chip wherein a radiation conversion is onselement provided which has a quantum well structure.
  • the radiation conversion element is made of AlInGaN, AlInGaP or AlInGaAs.
  • the radiation conversion element is designed to absorb the primary radiation of the semiconductor chip and to emit secondary radiation.
  • the object of the invention is to provide an improved semiconductor device having a semiconductor chip faradbau ⁇ len. Furthermore, the object of the invention is to provide an improved method for producing a Halbleiterbau ⁇ element with a semiconductor chip.
  • An advantage of the semiconductor device described is that the semiconductor device is simple and that a shift of the primary radiation of the semiconductor device Porterchips takes place in two different wavelengths with two different ⁇ elements.
  • the lichtemittie- Rende semiconductor chip having a first layer is covered with Konversi ⁇ onsmaterial.
  • the primary radiation of the semiconductor chip can already be at least partially converted into secondary radiation in the first layer.
  • a conversion element is arranged on the first layer.
  • the conversion element has semiconductor layers which absorb the primary radiation of the semiconductor chip and emit tertiary radiation.
  • the arrangement of the conversion element on the first layer a simple and compact construction of the semicon ⁇ terbauiatas is achieved. Furthermore, by providing the first layer with the conversion material and by providing the conversion element, a larger proportion of the primary radiation is converted into secondary radiation and into tertiary radiation. Further, the first layer of conversion material and the protrusion of the conversion element, the secondary radiation and the Tertiary ⁇ ärstrahlung with respect to the wavelength and with respect are formed differently on a wavelength spectrum by the provision. Examples of play, the transparent first layer containing the Kon ⁇ version material a secondary radiation with a longer wavelength o-, especially in the visible red color range of the produce in the infrared range.
  • the conversion element can generate a light with a shorter wavelength, in particular a visible green light, as tertiary radiation.
  • the first layer having the Konversi ⁇ onsmaterial may have a secondary radiation with a wider wavelength range than the conversion element for the tertiary radiation. This allows a desired research Farbmi- or a desired color temperature of from ⁇ given radiation can be set precisely.
  • the first layer comprises a matrix material and the conversion material.
  • the Matrixma ⁇ TERIAL can be made, for example, as the liquid matrix material on ⁇ , wherein the conversion material is mixed into the flüssi- ge matrix material.
  • the semiconductor chip can be covered with the first layer or embedded in the first layer by casting the semiconductor chip.
  • the conversion material for example, a phosphor, in particular red phosphorus or green phosphorus can be used.
  • a second layer is arranged on the first layer, wherein the conversion element is embedded in the second layer only with side surfaces or with side surfaces and the surface.
  • the conversion element protected at least on side surfaces, in particular on the upper ⁇ side by the second layer against environmental influences, for example against mechanical damage and / or moisture.
  • the second layer comprises a matrix material and a scattering particle.
  • the second layer can be used to scatter the electromagnetic radiation.
  • a greater proportion of the primary radiation can be directed towards the first layer above the semiconductor chip.
  • a greater proportion of the secondary radiation of the first layer can be directed in the direction of the conversion element.
  • a matrix material for example, silicone or epoxy material can be used.
  • scattering particles can be used in ⁇ play as titanium oxide.
  • the semiconductor layers of the conversion element have at least one quantum well structure.
  • a quantum well structure By using a quantum well structure, the wavelength spectrum of the tertiary radiation can be made narrower.
  • the conversion element is formed, for example, a tertiary radiation extracts ⁇ ben having a full width at half maximum of between 25 nm and 40 nm.
  • the conversion material of the first layer may be formed in order for For a secondary radiation with a full width at half maximum of 50 nm to 100 nm ⁇ rays.
  • the conversion element may comprise at least one or a plurality of quantum layers and barrier layers.
  • a quantum well structure may have between one and 100 quantum layers separated by corresponding barrier layers.
  • the semiconductor chip has at least one second active zone.
  • the second active Zo ⁇ ne is formed by a further primary radiation to erzeu ⁇ gene.
  • the semiconductor chip may be formed as a high-voltage chip with multiple active zones.
  • the primary radiation of the semiconductor chip may, for example, be in the visible blue color range. For example, a narrow gamut of green tertiary radiation and red secondary radiation can achieve a high gamut.
  • the semiconductor device has a frame, the frame having on an inner side a lower portion and an upper portion.
  • the lower portion passes through an outwardly From ⁇ gradation in the upper section.
  • the first layer may be disposed in the lower portion and end at the level of from ⁇ gradation.
  • the gradation when filling the frame can be used as the boundary for the first layer.
  • the second layer may be disposed at least in a part of the upper portion.
  • the semiconductor device can be produced easily and inexpensively.
  • the conversion ⁇ element is placed on a not yet completely cured first layer.
  • the conversion element connects directly to the first layer via an adhesive bond.
  • an interior of the frame is filled to the gradation with a first layer of conversion material.
  • the Konversi ⁇ onselement is placed on the first layer.
  • the second layer is filled into the inner space and an upper portion of the inner space is at least partially filled with the second layer.
  • a transparent third layer may be filled up to the second layer, having no scattering particles.
  • the third layer may cover an upper side of the conversion element .
  • Fig. 1 shows a schematic cross section through a
  • Fig. 7 is a schematic representation of a semi- ⁇ semiconductor chip having a plurality of active regions
  • Fig. 8 is a cross-section 9 is a schematic by a Halbeiterbauele ⁇ ment with a semiconductor chip in a flip chip to the lead frame mon ⁇ advantage
  • FIG. 10 shows a cross section through a semiconductor component with two semiconductor chips, which in one
  • the semiconductor component 1 shows a schematic cross section through a semiconductor component 1.
  • the semiconductor component 1 has a
  • the semiconductor chip 2 has at least one active zone for generating electromagnetic radiation as primary radiation.
  • the semiconductor chip 2 is arranged on a first leadframe section 3.
  • the semiconductor chip 2 may have a carrier 37, antes have on the radiation-generating semiconductor layer 38 at ⁇ play, in the form of epitaxial semiconductor layers, which as the active zone, at least a pn junction or we ⁇ a quantum well structure.
  • the carrier 37 for the radiation-generating semiconductor layers 38 can also be dispensed with.
  • the radiation-emitting ⁇ semiconductor chip 2 is, for example, as a laser diode or as
  • a second Lei ⁇ terrahmenabites 4 is arranged.
  • the first and the second leadframe section 3, 4 are embedded in a bottom plate 8.
  • a frame 6 is arranged, which surrounds an inner space 7 above the bottom plate 8, that is, over the first and the second lead frame section 3,4.
  • the bottom plate 8 and the frame 6 form a housing 5.
  • the semiconductor chip 2 has bonding wires 9, 10, which are electrically conductively connected to the first or the second leadframe section 3, 4.
  • An underside of the leadframe sections 3, 4 projects out of the bottom plate 8 and can be used as an electrical contact surface for contacting the semiconductor chip 2.
  • the bottom plate 8 and the lead frame sections 3,4 form a carrier.
  • another type of support for the semiconductor chip 2 may be provided instead of the leadframe sections 3, 4 and the bottom plate 8.
  • the bottom plate 8 may be formed fürgän ⁇ gig and there may be electrical plated- through tierungen be provided for electrical contacting of the semiconductor chip. 2
  • the housing 5 is formed of an electrically insulating material such as epoxy material.
  • the semiconductor chip 2 may also be designed as a flipchip, which rests directly on electrical contacts on the first or the second leadframe section 3, 4. It However, other types of electrical contacts for the semiconductor chip 2 can be used.
  • a transparent first layer 11 is arranged on the bottom plate 8, on the conductor frame sections 3, 4 and on the semiconductor chip 2.
  • the first layer 11 be ⁇ covers both a top surface 14 of the semiconductor chip 2 as well as side surfaces 15, 16 of the semiconductor chip 2 in the illustrated embodiment, ie, the first layer 11 adjacent to the upper surface 14 of the semiconductor chip 2 and directly to the four side surfaces 15, 16 of the semiconductor chip 2.
  • the ers ⁇ th layer 11 comprises a transparent matrix material as for example silicone ⁇ game.
  • Konver ⁇ sion material 18 is provided for example in the form of phosphor.
  • the conversion material 18 is formed for example in the form of a phosphor, in particular in the form of a red phosphor.
  • a phosphor can be used beispielswei ⁇ se a red or a green phosphor.
  • a KSF phosphor or an MGF phosphor can be used as the phosphor.
  • the conversion material 18 is formed for example in the form of particles.
  • the conversion mate rial ⁇ 18 has in the illustrated embodiment, an increased concentration on the top 14 of the semiconductor chip 2 and on the bottom plate 8 and the lead frame sections 3, 4.
  • the first layer 11 is formed, for example, by that liquid transparent
  • Matrix material 17 mixed with conversion material 18 in the interior 7 is filled from above.
  • the liquid Matrixma ⁇ material 17 requires time to cure. During this time, the conversion material 18 can fall off due to gravity and settle at a higher concentration on the top 14 of the semiconductor chip 2 and on the bottom plate 8 be ⁇ relationship as the lead frame sections 3 4.
  • the conversion material of the first layer may be formed to emit a secondary radiation having a full half width of 50 nm to 100 nm.
  • the frame 6 has a lower portion 19 and an upper portion 20.
  • the lower portion 19 is arranged on the Bo ⁇ denplatte 8 and goes over an outward court ⁇ tete gradation 21 in the upper portion 20 via.
  • the gradation 21 is formed as a circumferential surface, which ⁇ example, parallel to the top of the lead frame sections 3, 4 is aligned.
  • the gradation 21 can thus be as Load Limit for the first layer 11 applies ⁇ ver.
  • a conversion element 23 is arranged with an underside 22.
  • the underside 22 of the conversion element 23 may be connected either directly to the first layer 11 or via a bonding layer to the first layer 11.
  • a direct connection of the bottom 22 of the Konversionsele ⁇ mentes 23 with the first layer 11 can be manufactured in a simple manner in that the conversion element is placed on the first layer 11 23, when the first
  • Layer 11 is not completely cured. In this way, a full-surface adhesive bond between the bottom 22 and the first layer 11 without further connec ⁇ tion medium can be produced.
  • the conversion element 23 has semiconductor layers 27, in particular pn boundary layers or quantum well structures, which represent active zones.
  • the active zones are designed to absorb the primary radiation and to emit tertiary radiation.
  • the active zones of the conversion element are formed in such a way that they are optically excitable with the wavelength of the primary radiation.
  • the tertiary radiation can up a shorter, in particular ⁇ sondere a longer wavelength than the primary radiation point.
  • the primary radiation may represent blue light and the tertiary radiation green light.
  • a transparent second layer 12 is applied on the first layer 11 and on the conversion element 23, a transparent second layer 12 is applied.
  • the second layer 12 may cover only side surfaces of the conversion element 23 and not an upper side 24 of the conversion element 23.
  • the second layer 12 may have a transparent second matrix material 25 and scattering particles 26.
  • the second Matrixma ⁇ TERIAL 25 may comprise silicone, or are made of silicone.
  • the scattering particles 26 may be formed, for example in the form of Ti ⁇ tanoxidp
  • the scattering particles 26 are shown in the figure in the form of dots.
  • scattering particles other than titanium oxide may be used.
  • the second layer may also comprise conversion material which emits the same or a different secondary radiation as the conversion material of the first layer 11.
  • the second matrix material 25 may have a higher refractive index than the first Matrixma ⁇ TERIAL 17th
  • the conversion element 23 may include semiconductor layers 27 and ei ⁇ NEN carrier 28th
  • the carrier 28 may for example consist of sapphire, silicon carbide or glass.
  • semiconductor layers 27, the layers are formed for example as epitaxially deposited semiconductor ⁇ , and have a thickness of, for example 6 ym.
  • the carrier 28 may have a thickness of 100 ym or less, depending on the chosen embodiment.
  • the scattering particles 26 are arranged in a density such that a high degree of reflection of the primary radiation, of the secondary radiation and of the tertiary radiation is achieved. For example, a Reflectance higher than 90% in particular for the primary ⁇ radiation can be achieved.
  • the semiconductor layers 27 have, depending on the selected embodiment, a quantum structure including a plurality of quantum layers and barrier layers.
  • the semiconductor layers are formed, for example, from AlInGaN, AlInGaP or AlInGaAs. With these materials, tertiary radiation in the green, yellow or red spectral range can be generated efficiently.
  • suitable for the conversion element of each semiconductor Mate ⁇ rial whose band gap is suitable for the absorption of the primary radiation and for the production of tertiary radiation.
  • the semiconductor layers of the conversion element with the quantum well structure can be designed to output a tertiary radiation having a half width of between 25 nm and 40 nm.
  • the conversion element may comprise at least one or a plurality of quantum layers and barrier layers.
  • a quantum well structure may have between one and 100 quantum layers separated by corresponding barrier layers.
  • the first and second matrix materials may be formed of polymeric material.
  • the first and second matrix materials may be formed of polymeric material.
  • Scattering particles 26 may be made of zirconia or Alumi ⁇ niumoxid material.
  • the housing 5 can be produced for example by an injection molding process, a transfer molding process or a compression molding process.
  • a third layer can be seen 13 before ⁇ .
  • the third layer 13 is likewise formed from a transparent material, in particular from a polymer material.
  • the material of the third layer 13 can have a higher refractive index than the second matrix material 25 on ⁇ .
  • the third layer 13, the interior 7 to the Top of the frame 6 fill.
  • the third layer 13 be ⁇ also covers the top surface 24 of the conversion element 23. Since no scattering particles are provided in the third layer 13, an unhindered radiation can be carried out starting from the top 24 of the conversion element 23 upwards.
  • the second layer 12 forms a trough-shaped surface 29.
  • the trough-shaped top ⁇ surface 29 assumes a height adjacent to the top surface 24 of the conversion element 23 and is guided laterally towards the frame 6 upward. In this way, a funnel-like surface 29 is formed. As a result, an improved radiation can be achieved.
  • FIGS. 2 to 6 show individual method steps for producing the semiconductor component 1 of FIG. 1.
  • the housing 5 is provided with the first and second lead frame sections 3, 4. Subsequently, the semiconductor device 1 is placed on the first Porterrahmenab ⁇ section 3. Depending on the selected execution form side surfaces 30 of the inner space 7 may be ver see ⁇ with a reflective layer 34, in particular a mirror layer.
  • the semiconductor chip 2 can already be mechanically connected to the first leadframe section 3. Then, the bonding wires 9, 10 are connected to the electrical contacts of the semiconductor chip 2 and the lead frame sections 3, 4.
  • the matrix material 17 is filled with the conversion material 18 into the interior 7.
  • the un ⁇ tere portion 19 of the inner space 7 can be set up to gradation 21 with the matrix material 17 and the conversion material 18 fills ⁇ .
  • a first layer 11 is formed.
  • the first layer 11 is, for example, not yet cured, if the conversion element 23 is placed on the first layer 11 on ⁇ , as shown in Fig. 4.
  • a flat, adhesive bond between the bottom 22 of the conversion element 23 and the first layer 11 is prepared.
  • the bottom 22 may be formed by the semiconductor layers 27.
  • the gradation 21 can be used as a filling height indicator. For example, when filling with the aid of a sensor, it can be monitored whether the fill level of the first layer 11 has already reached the level of the graduation 21. If this is the case, then the In ⁇ fill will be terminated.
  • a second matrix material 25 is filled with scattering particles 26 into the interior space 7 onto the first layer 11.
  • the top 24 of the Kon ⁇ version element 23 remains free.
  • the second matrix material 25 can laterally flow which the frame et ⁇ upwards and forming the second layer 12 in this way a funnel-shaped surface 29th
  • ⁇ wd the third layer is filled up to the top 24 of the element 23 Kon ⁇ version. 13 This process status is shown in FIG. 6. In this way, a semiconductor ⁇ device 1 shown in FIG. 1 is obtained.
  • the semiconductor chip 2 emit any type of electromagnetic radiation, in particular ultraviolet radiation, visible radiation and / or infrared radiation.
  • the conversion material 18 may be formed to absorb the radiation of the semiconductor chip 2 and to shift it in the wavelength.
  • the semiconductor chip 7 shows a schematic illustration of a semiconductor chip 2 which has a plurality of active zones 31 arranged electrically in series.
  • the semiconductor chip a Have layer stack of semiconductor layers which form one above the other several active zones 31 with pn interfaces.
  • a p-type contact surface 32 is arranged on the upper side and an n-type contact surface 33 on the lower side.
  • the semiconductor chip 7 may be formed, for example, as a high-voltage sapphire chip.
  • the semiconductor chip 2 may be arranged in different variants on the leadframe section.
  • FIG. 8 shows an embodiment of a semiconductor component 1 in which the semiconductor chip 2 is designed as a flip chip and rests on the first or on the second leadframe section 3, 4, each with an electrical connection surface not explicitly shown.
  • Fig. 9 shows a schematic cross section through a semiconductor component 1, which is formed substantially according to the exporting ⁇ approximate shape of FIG. 1.
  • the semiconductor component 1 of FIG. 1 has two semiconductor chips 2 connected in series and arranged next to one another.
  • the semicon ⁇ terbauelement 1 is executed according to the described embodiments of FIG. 1.
  • the semiconductor chips 2 are for example, as explained with reference to FIG. 1, formed.
  • the two semiconductor chips 2 may also be designed differently, in particular emit different electromagnetic radiation, under ⁇ different sizes and / or have different materials.
  • the two semiconductor chips are electrically connected in series via bonding wires 9, 10, 35.
  • more than two semiconductor chips 2 can also be arranged in the semiconductor component 1.
  • Fig. 10 shows a schematic cross section through a semiconductor component 1, which is formed substantially according to the exporting ⁇ approximate shape of Fig. 8.
  • the semiconductor component 1 of FIG. 10 in contrast to the semiconductor component 1 of FIG. 8, has two semiconductor chips 2 connected in series and arranged side by side.
  • the semiconducting ⁇ terbauelement 1 is performed according to the described embodiments of Fig. 8, wherein a third Anthonyrahmenab- cut 36 in the bottom plate 8 is provided.
  • the half ⁇ semiconductor chips 2 are, for example, as with reference to FIG. 8, it purifies ⁇ formed.
  • the two semiconductor chips 2 can also be differently ⁇ forms, in particular different emit electromagnetic radiation, having different sizes and / or different materials.
  • the two semiconductor chips are arranged in the form of a flip chip on the three Lei ⁇ terrahmenabitesen 3, 4, 36 and each other via the lead frame portions 3, 4, 36 are electrically connected in series overall.
  • the electromagnetic radiation of the two semiconductor chips are shifted by the conversion element 23 in the Wel ⁇ lenander, as described for the example of FIG. 8 for a semiconductor chip 2.
  • more than two semiconductor chips 2 may be arranged in the semiconductor device 1 in flip-chip mounting.
  • at least two semiconductor chips 2 may be electrically connected in parallel.
  • transistors for the control of the semiconductor device 1 with one or more semiconductor chips 2 electronic Schal ⁇ lines with transistors, in particular field effect transistors and driver circuits can be used.
  • semiconductor devices 1 with at least one semiconductor chip 2 which are operated with a high voltage, low current for driving the semiconductor device 1 are suffi ⁇ accordingly.
  • the semiconductor components 1 or the semiconductor chips 2 can have voltages significantly above 3 V, in particular special be operated in the range of 24V.
  • Currents suffi ⁇ chen can significantly less than 100mA, for example in the range of less than 20 mA for driving the semiconductor chip. 2 Due to the low power consumption, the transistor circuits and the driver circuits can be made more compact.
  • the transistors can be integrated with the driver circuits in an electronic component, for example.
  • an electronic component can we ⁇ tendonss comprise a transistor circuit and at least one Trei- berscnies.
  • An electronic component can be provided in order to operate individual semiconductor chips 2 or series-connected semiconductor chips 2 of the semiconductor component 1.
  • the semiconductor device 1 and the electronic component with the transistor and the driver circuit may be on a common carrier, especially on a circuit board is arranged ⁇ .
  • the electronic component is connected terbauiatas, in particular the contact surfaces of the Lei ⁇ terrahmenabête 3, 4 via electrical ⁇ specific lines with the electrical terminals of the semiconductor in order to drive the semiconductor chips. 2

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Abstract

L'invention concerne une composant semi-conducteur (1) comprenant une puce semi-conductrice (2) émettrice de rayonnement, cette puce semi-conductrice (2) étant conçue pour générer un rayonnement primaire. Ladite puce semi-conductrice (2) est recouverte d'une première couche (11) comprenant une matière de conversion (18), cette matière de conversion (18) étant conçue pour absorber le rayonnement primaire et émettre un rayonnement secondaire. Un élément de conversion (23) est disposé sur la première couche (11), cet élément de conversion (23) présentant des couches de semi-conducteur (27). Ces couches de semi-conducteur (27) sont conçues pour absorber le rayonnement primaire et émettre un rayonnement tertiaire.
PCT/EP2018/052198 2017-01-30 2018-01-30 Composant semi-conducteur comprenant une puce semi-conductrice WO2018138370A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102017101762.3 2017-01-30
DE102017101762 2017-01-30
DE102017106776.0 2017-03-29
DE102017106776.0A DE102017106776A1 (de) 2017-01-30 2017-03-29 Halbleiterbauelement mit Halbleiterchip

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WO2018138370A1 true WO2018138370A1 (fr) 2018-08-02

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CN114287066A (zh) * 2019-09-05 2022-04-05 奥斯兰姆奥普托半导体有限责任公司 光电器件和用于制造光电器件的方法

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CN109065693B (zh) * 2018-08-08 2020-09-11 厦门多彩光电子科技有限公司 一种led封装方法
DE102018119462A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Sichtbares licht und ir-strahlung emittierendes optoelektronisches bauelement
EP3843611A1 (fr) * 2018-08-29 2021-07-07 Osa Opto Light Gmbh Émetteur large bande pour rayonnement électromagnétique

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