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WO2018134495A1 - Process for manufacturing a power electronic module by additive manufacturing, associated module and substrate - Google Patents

Process for manufacturing a power electronic module by additive manufacturing, associated module and substrate Download PDF

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Publication number
WO2018134495A1
WO2018134495A1 PCT/FR2018/050024 FR2018050024W WO2018134495A1 WO 2018134495 A1 WO2018134495 A1 WO 2018134495A1 FR 2018050024 W FR2018050024 W FR 2018050024W WO 2018134495 A1 WO2018134495 A1 WO 2018134495A1
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WO
WIPO (PCT)
Prior art keywords
substrate
layer
face
thermomechanical transition
thermomechanical
Prior art date
Application number
PCT/FR2018/050024
Other languages
French (fr)
Inventor
Rabih KHAZAKA
Stéphane AZZOPARDI
Donatien Henri Edouard MARTINEAU
Original Assignee
Safran
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Safran filed Critical Safran
Priority to JP2019559403A priority Critical patent/JP7034177B2/en
Priority to CN201880006984.0A priority patent/CN110178215B/en
Priority to RU2019125714A priority patent/RU2750688C2/en
Priority to US16/478,326 priority patent/US11147851B2/en
Priority to EP18700943.6A priority patent/EP3571716B1/en
Priority to CA3049478A priority patent/CA3049478A1/en
Priority to BR112019014637-7A priority patent/BR112019014637B1/en
Publication of WO2018134495A1 publication Critical patent/WO2018134495A1/en
Priority to US17/475,989 priority patent/US11594475B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0341—Intermediate metal, e.g. before reinforcing of conductors by plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/1344—Spraying small metal particles or droplets of molten metal

Definitions

  • the invention relates to the manufacture of a substrate and an electronic power module.
  • the present invention finds a particular application in the field of aeronautics where the thermal stresses can be severe.
  • the electronic power modules are included in the converters necessary for the electrification of the propulsive and non-propulsive systems on board the aircraft in order to convert the electrical energy of the main network (115V AC, 230V AC, 540V DC.) In several forms ( AC / DC, DC / AC, AC / AC and DC / DC).
  • Figure 1 is illustrated an example of power electronic module 1 known from the prior art.
  • the power electronic module 1 is composed of a substrate 2 comprising an electrically insulating layer 2a made of ceramic material, arranged between two metal layers 2b, 2c.
  • the two metal layers are assembled to the electrically insulating layer 2a by one of the various known techniques such as for example by brazing (or in English terminology “Active Metal Brazing” or “AMB”), by direct bonding copper (or English terminology “Direct Bonded Copper” or “DBC”), or by direct bonding of aluminum (or in the English terminology “Direct Bonded Aluminum” or "DBA”).
  • the upper metal layer 2b of the substrate 2 forms a power circuit on which power semiconductor components 3 are assembled.
  • the electronic power module 1 comprises an electrical and / or mechanical interconnection joint 4 and 14 through which the power semiconductor components 3 and the connectors 11 are assembled to the power circuit 2b. Because of their imperfections, Power semiconductor components 3 are the seat of Joule losses and therefore represent an important source of heat.
  • the power semiconductor components 3 are then interconnected electrically with each other and with the connectors 11 using the wiring son.
  • a housing 12 generally made of polymer is then bonded with an adhesive seal 13 to the substrate 2 or to a metal soleplate on which the substrate 2 is disposed.
  • the housing 12 is then filled with an encapsulant 15, such as a gel or epoxy, to provide mechanical and electrical protection of power components 3 and wiring wires 10.
  • the lower metal layer 2c of the substrate 2 is attached to the metal soleplate 5 whose function is to spread the heat flux and to provide a thermal connection with a metal heat sink 6.
  • the power electronic module 1 comprises an electrical and / or mechanical interconnection joint 7 through which the lower metal layer 2c of the substrate 2 is attached to the soleplate 5.
  • the sole 5 is itself attached to the heat sink 6 metal through a layer 8 of thermal interface material, such as thermal grease, elastomeric film, or phase change materials.
  • the layer 8 of thermal interface material reduces the thermal contact resistance between the sole 5 and the heat sink 6 to ensure better evacuation of the heat flow.
  • the heat sink 6 is provided with fins 9 to further reduce the thermal resistance of the latter, the fins 9 being traversed by a cooling fluid, for example air.
  • the electrically insulating layer 2a of the substrate 2 as well as the layer 8 of thermal interface material are layers with high thermal resistance and therefore poor heat conduction. They thus limit the heat dissipation generated within the power semiconductor components 3 to the heat sink 6 and the cooling fluid. Furthermore, the layer 8 of thermal interface material induces a non-homogeneous thermal resistance, which depends on the positioning power semiconductor components 3 on the power circuit, especially if the latter has a flatness defect.
  • the multiplicity of layers 2a, 2b, 2c, 4, 5, 7, 8 between the power semiconductor components 3 and the heat sink 6 also contributes to this high thermal resistance.
  • the cooling of the electronic power module 1 is therefore limited and the electronic power module 1 is not suitable for applications at high temperatures, that is to say at ambient temperatures greater than or equal to 175 ° C due to the presence of organic materials (thermal interface materials, the encapsulant, the adhesive seal and the housing) which generally degrade rapidly above 175 ° C.
  • organic materials thermal interface materials, the encapsulant, the adhesive seal and the housing
  • large-gap semiconductor components SiC, GaN, ...) can operate beyond the conventional limits of Si components (175 ° C) and to take advantage of the opportunity to operate at high temperatures, all components of the electronic power module must be capable of reliable operation at high temperatures.
  • the assembly solutions of the different layers 2a, 2b, 2c, 5 having different thermal expansion coefficients between them make the power electronic module 1 sensitive to the phenomenon of thermal fatigue, thus limiting the reliability of the electronic module
  • These solutions may for example cause cracks in the electrically insulating layer 2a of the substrate 2 and / or in the electrical interconnection joints 4, 7.
  • the etchings applied to the upper metal layer 2b of the substrate 2 create an asymmetry with the lower metal layer 2c with respect to the electrically insulating layer 2a. This has the effect, during a rise in temperature, for example when the power semiconductor components 3 are assembled to the substrate 2 or when the substrate 2 is assembled to the sole 5 or during an operational phase of the module power electronics 1, to induce thermomechanical stresses in the substrate 2 causing its deformation. This deformation is called arrow and corresponds to a camber of the substrate 2.
  • Such an arrow of the substrate 2 will create a vacuum which can be compensated by the layer 8 of thermal interface material.
  • this layer 8 limits the heat dissipation between the power semiconductor components 3 and the heat sink 6 and induces a nonhomogeneous thermal resistance which depends on the positioning of the power semiconductor components 3 on the power circuit. power. It is therefore not possible to compensate for the deflection of the substrate 2 by increasing the thickness of the layer 8 of thermal interface material without further deteriorating the heat dissipation within the power electronic module 1.
  • the invention aims to overcome the disadvantages of power electronic modules mentioned above.
  • An object of the invention proposes a method of manufacturing an electronic module of power by additive manufacturing, the electronic module comprising a substrate comprising an insulating plate, such as a ceramic plate, having first and second opposite faces, and a first metal layer disposed directly on the first face of the insulating plate and a second metal layer disposed directly on the second face of the insulating plate.
  • an insulating plate such as a ceramic plate
  • At least one of the metal layers is produced by a step of depositing a thin layer of metal and a step of annealing the metal layer, generally at a temperature of the order of 700.degree. C, and the method further comprises a step of forming at least one thermomechanical transition layer on at least one of the first and second metal layers, said at least one thermomechanical transition layer comprising a material having a coefficient of expansion thermal (CTE) lower than that of copper.
  • CTE coefficient of expansion thermal
  • the deposition step of a thin layer of metal may comprise a screen-printing deposit or a deposition of a thin metal layer from a paste or an ink by using so-called “direct writing process” techniques.
  • direct writing process Such as the following techniques for example: “inkjet process”, “extrusion based process”, “aerosol based process”.
  • thermomechanical transition layer of the substrate according to the invention makes it possible, thanks to the reduced CTE that it has with respect to the metal layer, to increase the thermomechanical reliability of the substrate compared to a copper direct-bonded substrate (DBC), and it makes it possible to limit the problems related to the arching of the substrates, observed for ceramic substrates (DBC and AMB).
  • DBC copper direct-bonded substrate
  • the manufacturing method uses additive manufacturing for each step of forming a new layer of the substrate, the method makes it possible to avoid any loss of material during the manufacture of the electronic power module by depositing and selectively melting the layers. .
  • Additive manufacturing also known as 3D printing
  • a power source comes to bring energy in well-defined places to the powder deposited by thin layer (typically 100pm) to agglomerate it.
  • thin layer typically 100pm
  • the succession of layer deposition and their selective agglomeration thus makes it possible to construct a dense material with a well-defined shape.
  • the selectivity of the agglomerated parts makes it possible to give the object directly the desirable shape even if the latter is complex. It also limits the loss of materials that can be extremely desirable for expensive and rare materials.
  • said at least one thermomechanical transition layer may be deposited by deposition of a bed of material powder or by spraying of powder of material, the deposited powder being then frozen by scanning a power source. heat in an inert atmosphere.
  • the thickness of the ceramic is between 300 ⁇ m and 1000 ⁇ m and the thickness of copper between 200 ⁇ m and 500 ⁇ m.
  • the greater the thickness of copper the less the substrate is reliable during thermal cycles leading to high thermomechanical stresses.
  • the additive manufacturing used by the process according to the invention makes it possible to produce and use thin copper layers, that is to say less than 100 ⁇ m and more particularly between 20 ⁇ m and 50 ⁇ m, offering better reliability.
  • the superposition of thermomechanical transition layers in a material different from copper makes it possible to increase the thickness of the tracks and thus to increase the acceptable current in the tracks without limiting the reliability of the substrates.
  • the use of metals in additive manufacturing generally requires a source of power to bring a necessary power, for example from 100 W to 1 kW, to melt or sinter the metal powder deposited during the additive manufacturing process in form a bed of powder or by localized powder projection.
  • the power source laser beam or electron beam targets the areas where it is desirable to have dense material to have each passage a densified and frozen layer.
  • the typical thickness of a deposited layer may vary between 20 ⁇ m and 150 ⁇ m.
  • a new layer is then deposited and frozen by a scan of the power source on the area to be frozen.
  • the succession of layers deposition steps and their densification make it possible to obtain the object with the desired shape.
  • the CTE of the materials used for the thermomechanical transition layers is between 3 ppm / ° C and 17 ppm / ° C.
  • thermomechanical transition layers thus have a CTE between that of the metal layer and the CTE of the power semiconductor components intended to be mounted on the electronic power module.
  • the substrate comprises, on at least one of the first and second faces of the insulating plate, a stack of a metal layer and a plurality of thermomechanical transition layers, said at least one stack having a gradient of CTE.
  • the method further comprises a step of forming a radiator by additive manufacturing from the last thermomechanical transition layer of the second face of the substrate, the second face of the substrate comprising the second copper layer .
  • thermomechanical transition zone comprising a radiator makes it possible to reduce the thermal resistance of the electronic power module and to eliminate the thermal interface material used in the state of the art.
  • the thermal interface material is generally a thermal grease.
  • the deletion of the thermal interface makes it possible to eliminate the weak points associated with it, in particular as regards its low thermal conductivity and its degradation at high temperature.
  • the manufacture of the radiator by additive manufacturing offers the possibility of manufacturing radiators with complex geometries for efficient cooling in air and often too complex to achieve with conventional technologies known for the manufacture of radiators.
  • the method further comprises a step of producing a housing capable of protecting the electronic components intended to be mounted on the first face of the substrate and of making connectors capable of electrically connecting the electronic module to external electrical elements, the housing and the connectors being made by additive manufacturing from the last thermomechanical transition layer of the first face of the substrate, the first face of the substrate comprising the first copper layer.
  • the realization of the housing by additive manufacturing from the last thermomechanical transition layer of the substrate offers the possibility of making hermetic packages with insulations (insulating gas with or without pressure, high vacuum, insulating liquid, etc.) different from those provided. by conventionally used organic materials such as gels or epoxies.
  • the manufacture of the metal case by 3D printing makes it possible to eliminate the polymers present in the state of the art in the adhesive seals used to glue the case, in the case and the silicone gel encapsulating the electronic components.
  • Electronic power modules operating in this temperature range are particularly interesting for aeronautical applications, since they make it possible to bring the control electronics closer to the hot springs that are for example the brakes or the engine, to have more integrated systems and thus gain in volume.
  • the increase in the allowed ambient temperature also makes it possible to reduce the dimensions of the cooling system and thus to increase the power density of the power converter.
  • the metal case also provides electromagnetic shielding of the electronic power module and thus reduces the effect of external electromagnetic disturbances on the electronic components of the module.
  • Another object of the invention provides a substrate for an electronic power module, the substrate comprising an insulating plate having first and second opposite faces, and a first metal layer disposed directly on the first face of the insulating plate and a second layer. metal arranged directly on the second face of the insulating plate.
  • the substrate comprises, on at least one of the first and second metal layers, at least one thermomechanical transition layer comprising a material having a coefficient of thermal expansion less than that of the metal of the metal layer.
  • Yet another object of the invention proposes an electronic power module comprising a substrate having a first face and a second face opposite to the first face, and a radiator mounted on the second face of the substrate, the first face of the substrate being intended for receive electronic components, the substrate corresponding to the substrate as defined above.
  • FIG. 1, already described, illustrates an exemplary electronic power module known from the prior art
  • FIG. 2 shows a schematic representation of an electronic power module according to one embodiment of the invention
  • FIG. 3 shows a logic diagram of a method of manufacturing an electronic power module according to an embodiment of the invention.
  • FIG. 2 diagrammatically shows an electronic power module 20 according to one embodiment of the invention.
  • the electronic power module 20 comprises a substrate 21, a housing 22 and a radiator 23.
  • the substrate 21 comprises a ceramic insulating plate 24, Al 2 0 3 or AlN for example, having a first face 24a and a second face 24b opposite to the first face 24a.
  • the insulating plate 24 further comprises a first copper layer 25a and a second copper layer 25b deposited by screen printing, respectively on the first face 24a and on the second face 24b of the insulating plate 24, and having undergone annealing.
  • the first copper layer 25a forms electrically conductive tracks for connection to electronic components 26, and the second copper layer 25b forms tracks. thermally conductive elements intended to be thermally coupled to the radiator 23.
  • the substrate 21 also comprises a first superposition 27a of thermomechanical transition layers and a second superposition 27b of thermomechanical transition layers.
  • the first superposition 27a is disposed on the first copper layer 25a. It comprises, in the illustrated embodiment, three thermomechanical transition layers referenced 271 to 273, each thermomechanical transition layer 271 to 273 being formed by additive manufacturing from an electrically conductive material having a coefficient of thermal expansion, also noted CTE for the English expression "coefficient of thermal expansion", lower than that of copper which is generally of the order of 17 ppm / ° C.
  • the first thermomechanical transition layer 271 of the first superposition 27a has a CTE of the order of 13 ppm / ° C.
  • the second thermomechanical transition layer 272 has a CTE of the order of 10 ppm / ° C
  • the third thermomechanical transition layer 273 has a CTE of the order of 7 ppm / ° C.
  • the first thermomechanical transition layer 271 of the first superposition 27a is between the first copper layer 25a and the second thermomechanical transition layer 272, and the second thermomechanical transition layer 272 is between the first thermomechanical layer 271 and the third layer Thermomechanical transition 273.
  • the first copper layer 25a and the first superposition 27a thus forms a first stack 28a having a gradient of CTE, the CTE decreasing as a function of the distance of the layer with the first face 24a the insulating plate 24 ceramic.
  • the second superposition 27b is disposed on the second copper layer 25b. It comprises, in the illustrated embodiment, three thermomechanical transition layers referenced 274 to 276, each thermomechanical transition layer 274 to 276 being formed by additive manufacturing from a thermally conductive material having a CTE lower than that of copper.
  • the first thermomechanical transition layer 274 of the second superposition 27b has a CTE of the order of 13 ppm / ° C
  • the second thermomechanical transition layer 275 has a CTE of order of 10 ppm / ° C
  • the third thermomechanical transition layer 276 has a CTE of the order of 7 ppm / ° C.
  • the first thermomechanical transition layer 274 of the second superposition 27b is between the second copper layer 25b and the second thermomechanical transition layer 275
  • the second thermomechanical transition layer 275 is between the first thermomechanical layer 274 and the third layer thermomechanical transition 276.
  • the second copper layer 25b and the second superposition 27b thus form a second stack 28b having a gradient of CTE, the CTE decreasing as a function of the distance of the layer with the second face 24b of the insulating plate 24 ceramic.
  • the substrate 21 comprises the ceramic insulating plate 24, the first stack 28a and the second stack 28b.
  • the CTE varies within the stack, in the illustrated embodiment, between 17 ppm / ° C for the copper layer 25a or 25b and a CTE greater than or equal to 3 to 4 ppm / ° C to approach the CTE ceramic insulating plate 24 which has a CTE of 7 ppm / ° C or electronic components 26 semiconductors that can have a CTE of the order of 3 to 4 ppm / ° C.
  • the gradient of CTE presented by the first and second stacks 28a and 28b of the substrate makes it possible to improve the reliability of the substrate and to offer a small variation of camber as a function of temperature with thick metallizations.
  • the radiator 23 of the power electronic module 20 is formed from the third thermomechanical transition layer 276 of the second superposition 27b.
  • the second stack 28b comprises the radiator and is made entirely by additive manufacturing and has a CTE gradient, the CTE decreasing gradually between the second copper layer 25b and the radiator 23.
  • the housing 22 of the power electronics module 20 is formed from the third thermomechanical transition layer 273 of the first superposition 27a.
  • the housing 22 can hermetically encapsulate the electronic components 26 mounted on the third thermomechanical transition layer 273 of the first superposition 27a.
  • the first stack 28a comprises the housing 22 and is made entirely by additive manufacturing, and has a gradient of CTE, the CTE decreasing gradually between the first copper layer 25a and the housing 22.
  • the electronic power module 20 also comprises connectors 29 for connecting the electronic module 20 to external electrical elements not shown. Connectors 29 are also formed from the third thermomechanical transition layer 273 of the first superposition 27a.
  • the part forming the cover of the housing 22 has not been shown, but can also be formed by additive manufacturing since it is an integral part of the housing 22 or made separately and attached to the case after.
  • the electronic components 26, in particular the semiconductor components, are fixed and connected to the third thermomechanical transition layer 273 of the first superposition by solders 30.
  • FIG. 3 shows a logic diagram of a manufacturing method of the electronic power module 20 of FIG. 2 according to one embodiment of the invention.
  • a copper paste compatible with the ceramic of the plate 24 is deposited by thin-film screen printing, typically between 20 and 50 ⁇ m, on the second face 24b of the ceramic insulating plate 24, the second 24b face corresponding to the lower face in Figure 2, and the first face 24a which corresponds to the upper face in Figure 2.
  • the copper paste is deposited with the patterns of electrical tracks considered while on the second face 24b, the copper paste is deposited in full plate, that is to say covering the entire lower face 24b of the insulating plate 24, the lower face 24b being intended for cooling the electronic module 20.
  • the copper pastes may be, for example, Heraeus or C7720 type industrial pastes that are compatible with an Al 2 O 3 ceramic plate, or C7403 or C7404 type pastes that are compatible with an AlN ceramic.
  • the method may also comprise, in variants, the use of other techniques for deposition of thin metal layers from pastes or inks such as so-called direct inkjet process (inkjet process, extrusion based process, aerosol based process, ).
  • direct inkjet process inkjet process, extrusion based process, aerosol based process, .
  • annealing of the first and second layers of copper paste 25a and 25b is then carried out at a temperature of the order of 700 ° C to remove solvents and other organic materials and to sinter the copper particles .
  • the first and second copper layers 25a and 25b obtained after the annealing ensure good adhesion to the ceramic of the insulating plate 24 and have good weldability for the thermomechanical transition layer, respectively 271 and 274, which will be agglomerated on the coating layer.
  • corresponding copper 25a or 25b by a local heating produced by a laser or an electron beam for example.
  • thermomechanical transition layer 271 to 276 is formed on the copper layers 25a and 25b.
  • powder beds with materials having CTEs between 7 and 17 ppm / ° C are deposited on the second copper layer. 25b and then frozen successively by scanning the power source under an inert atmosphere, for example using Argon, over the entire surface to have a flat surface.
  • thermomechanical transition layer 274 of the second superposition 27b is formed on the second copper layer 25b by depositing a bed of powder of a material having a CTE of 13 ppm / ° C over the entire surface of the second copper layer 25b, and then the first thermomechanical transition layer 274 of the second superposition 27b is frozen by the scanning of a laser for example, under an inert atmosphere over the entire surface of the lower face 24b of the ceramic plate 24.
  • thermomechanical transition layer 275 of the second superposition 27b is formed by depositing on the first thermomechanical transition layer 274 a bed of powder of a material having a CTE of 10. ppm / ° C over the entire surface of the first thermomechanical transition layer 274, and then the second thermomechanical transition layer 275 of the second superposition 27b is frozen by scanning a laser, for example, under an inert atmosphere over the entire surface of the the lower face 24b of the ceramic plate 24.
  • thermomechanical transition layer 276 of the second superposition 27b is formed by depositing on the second thermomechanical transition layer 275 a bed of powder of a material having a CTE of 7. ppm / ° C over the entire surface of the second thermomechanical transition layer 275, then the third thermomechanical transition layer 276 of the second superposition 27b is frozen by scanning a laser, for example, under an inert atmosphere over the entire surface of the the lower face 24b of the ceramic plate 24.
  • the same steps as the lower face are performed except that the scanning of the power source does not cover the entire surface given that the first copper layer 25a does not cover the entire surface but forms electrical tracks on the upper face of the insulating plate 24.
  • a first thermomechanical transition layer 271 of the first superposition 27a is formed on the first copper layer 25a by depositing a bed of powder. of a material having a CTE of 13 ppm / ° C only on the tracks formed by the first copper layer 25a, and then the first thermomechanical transition layer 271 of the first superposition 27a is frozen by the scanning of a laser, for example under an inert atmosphere on the tracks thus formed.
  • thermomechanical transition layer 272 of the first superposition 27a is formed by depositing on the first thermomechanical transition layer 271 a bed of powder of a material having a CTE of 10. ppm / ° C only on the tracks formed by the first thermomechanical transition layer 271 and the first copper layer 25a, then the second thermomechanical transition layer 272 of the first superposition 27a is frozen by the scanning of a laser for example, under an inert atmosphere on the tracks thus formed.
  • thermomechanical transition layer forming step 126 a third thermomechanical transition layer 273 of the first superposition 27a is formed by depositing on the second thermomechanical transition layer 272 a bed of powder of a material having a CTE of 7. ppm / ° C only on the tracks formed by the second thermomechanical transition layer 272, the first thermomechanical transition layer 271 and the first copper layer 25a, and then the third thermomechanical transition layer 273 of the first superposition 27a is frozen by the scanning a laser for example, in an inert atmosphere on the tracks thus formed.
  • the last upper layer of the first superposition 27a that is to say the third thermomechanical transition layer 273, preferably has a CTE as close as possible to that of the semiconductor components 26 which are generally brazed on this layer, i.e., the order of 3 to 4 ppm / ° C
  • a polishing step may be provided to achieve the necessary roughness.
  • the method may also comprise, in variants, finishing deposits on the last top layer 273 conventionally used in ENIG type electronic assembly.
  • ENIG ENIG type electronic assembly.
  • Electroless Nickel Immersion gold Electroless Nickel Immersion gold
  • ENEPIG Electroless Nickel Electroless Palladium Immersion Gold
  • EPIG Electroless Palladium and Immersion Gold plating
  • ISIG Immersion Silver and Immersion Gold plating
  • thermomechanical transition layers powder projections can also be envisaged to replace the powder beds.
  • the variation of CTE of the layers is ensured by the variation of the concentration of the powders or fibers of the low CTE material (W, Mo, Invar, Kovar, diamond, SiC, carbon fiber %) in the high CTE materials (Cu).
  • thermomechanical transition layers can be chosen, for example, from the following list: W 50 Cu 50, W 60 Cu 140, W 70 Cu 30, W 80 Cu 20, W 90 Cu 0.1, Mo 50 Cu 50, Mo 60 Cu 40, Mo 70 Cu 30, Mo 80 Ca 20, Mo 85 Ca 5.
  • the power of the heat source must make it possible to melt at least one of the materials of the mixture to ensure good incorporation of the particles into a metal matrix.
  • the copper has the lowest melting temperature and therefore requires at least a power and a time to reach the melting temperature of Cu which is 1085 ° C.
  • each layer of copper or thermomechanical transition layer deposited varies between 20 ⁇ and 150 pm and the CTE approaches that of the ceramic away from the interface with the insulating plate 24 ceramic. This makes it possible to reduce the sudden mechanical stresses in the ceramic of the insulating plate 24 during temperature variations and to distribute the stresses between the different layers without having excessive stresses between two successive metal layers leading to the failure of the assembly.
  • the manufacturing method further comprises, during the manufacture of the lower face, the printing of the continuous layers until the manufacture of a radiator 23 with different complex and effective geometries for cooling in air, as for example.
  • a radiator 23 is formed from of the third thermomechanical transition layer 276 of the second superposition to include the radiator 23.
  • thermomechanical transition layer 273 of the first superposition 27a is deposited in order to make the connectors 29 and the housing 22 by 3D printing in a step 140 which can be confused with the sixth formation step 126 thermomechanical transition layers.
  • the power semiconductor components 26 are then transferred to the last layer 273 of the first superposition 27a by one of the conventionally used techniques, such as brazing, bonding , or sintering for example, and then electrically connected for example by wiring son, brazing metal frame, or other interconnection technique.
  • the conventionally used techniques such as brazing, bonding , or sintering for example
  • the electronic module 20 is encapsulated, that is to say filled with a silicone gel, epoxy, or with a liquid or an insulating gas in the case where the closure is hermetic and the housing 22 is closed by additive manufacturing from the same material as the material used for the third thermomechanical transition layer 273 of the first superposition 27a.
  • an insulating glass, ceramic seal can be achieved.
  • the part constituting the closure of the case can be made separately and attached to the case after soldering, sintering, or other assembly technique.

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Abstract

A process for manufacturing a power electronic module (20) by additive manufacturing, the electronic module (20) comprising a substrate (21) including an electrically insulating sheet (24) having first and second opposite faces (24a, 24b), and a first metal layer (25a) that is placed directly on the first face (24a) of the insulating sheet (24) and a second metal layer (25b) that is placed directly on the second face (25b) of the insulating sheet (24). At least one of the metal layers (25a) is produced via a step (100) of depositing a thin copper layer and a step (110) of annealing the metal layer (25a, 25b), and the process furthermore comprises a step (120) of forming at least one thermomechanical transition layer (271 to 273, 274 to 276) on at least one of the first and second metal layers (25a, 25b), said at least one thermomechanical transition layer (271 to 273, 274 to 276) including a material having a thermal expansion coefficient lower than that of the metal of the metal layer (25a, 25b).

Description

Titre de l'invention  Title of the invention
Procédé de fabrication d'un module électronique de puissance par fabrication additive, substrat et module associés. Method of manufacturing an electronic module of power by additive manufacturing, associated substrate and module.
Arrière-plan de l'invention Background of the invention
L'invention concerne la fabrication d'un substrat et d'un module électronique de puissance.  The invention relates to the manufacture of a substrate and an electronic power module.
La présente invention trouve une application particulière dans le domaine de l'aéronautique où les contraintes thermiques peuvent être sévères.  The present invention finds a particular application in the field of aeronautics where the thermal stresses can be severe.
Les modules électroniques de puissance sont compris dans des convertisseurs nécessaires pour l'électrification des systèmes propulsifs et non propulsifs à bord des aéronefs afin de convertir l'énergie électrique du réseau principal (115V AC, 230V AC, 540V DC.) sous plusieurs formes (AC/DC, DC/AC, AC/AC et DC/DC).  The electronic power modules are included in the converters necessary for the electrification of the propulsive and non-propulsive systems on board the aircraft in order to convert the electrical energy of the main network (115V AC, 230V AC, 540V DC.) In several forms ( AC / DC, DC / AC, AC / AC and DC / DC).
Sur la figure 1 est illustré un exemple de module électronique de puissance 1 connu de l'art antérieur.  In Figure 1 is illustrated an example of power electronic module 1 known from the prior art.
Le module électronique de puissance 1 est composé d'un substrat 2 comprenant une couche électriquement isolante 2a, en matériau céramique, agencée entre deux couches métalliques 2b, 2c. Les deux couches métalliques sont assemblées à la couche électriquement isolante 2a par une des différentes techniques connues comme par exemple par brasage (ou en terminologie anglo-saxonne « Active Métal Brazing » ou encore « AMB »), par liaison direct du cuivre (ou en terminologie anglo-saxonne « Direct Bonded Copper » ou encore « DBC »), ou encore par liaison directe d'aluminium (ou en terminologie anglo-saxonne « Direct Bonded Aluminium » ou encore « DBA »).  The power electronic module 1 is composed of a substrate 2 comprising an electrically insulating layer 2a made of ceramic material, arranged between two metal layers 2b, 2c. The two metal layers are assembled to the electrically insulating layer 2a by one of the various known techniques such as for example by brazing (or in English terminology "Active Metal Brazing" or "AMB"), by direct bonding copper (or English terminology "Direct Bonded Copper" or "DBC"), or by direct bonding of aluminum (or in the English terminology "Direct Bonded Aluminum" or "DBA").
La couche métallique supérieure 2b du substrat 2 forme un circuit de puissance sur lequel des composants à semi-conducteur de puissance 3 sont assemblés. Comme cela est illustré sur la figure 1, le module électronique de puissance 1 comprend un joint d'interconnexion électrique et/ou mécanique 4 et 14 par l'intermédiaire duquel les composants à semi-conducteur de puissance 3 et les connectiques 11 sont assemblés au circuit de puissance 2b. Du fait de leurs imperfections, les composants à semi-conducteurs de puissance 3 sont le siège de pertes par effet Joule et donc représentent une source importante de chaleur. The upper metal layer 2b of the substrate 2 forms a power circuit on which power semiconductor components 3 are assembled. As illustrated in FIG. 1, the electronic power module 1 comprises an electrical and / or mechanical interconnection joint 4 and 14 through which the power semiconductor components 3 and the connectors 11 are assembled to the power circuit 2b. Because of their imperfections, Power semiconductor components 3 are the seat of Joule losses and therefore represent an important source of heat.
Les composants à semi-conducteurs de puissance 3 sont ensuite interconnectés électriquement entre eux et avec les connectiques 11 à l'aide des fils de câblage. Un boîtier 12 généralement en polymère est ensuite collé à l'aide d'un joint adhésif 13 sur le substrat 2 ou sur une semelle 5 métallique sur laquelle est disposée le substrat 2. Le boîtier 12 est ensuite rempli par un encapsulant 15, tel qu'un gel ou époxy, pour assurer une protection mécanique et électrique des composants de puissance 3 et des fils de câblage 10.  The power semiconductor components 3 are then interconnected electrically with each other and with the connectors 11 using the wiring son. A housing 12 generally made of polymer is then bonded with an adhesive seal 13 to the substrate 2 or to a metal soleplate on which the substrate 2 is disposed. The housing 12 is then filled with an encapsulant 15, such as a gel or epoxy, to provide mechanical and electrical protection of power components 3 and wiring wires 10.
La couche métallique inférieure 2c du substrat 2 est rapportée sur la semelle 5 métallique qui a pour rôle d'étaler le flux thermique et d'assurer une connexion thermique avec un dissipateur thermique 6 métallique. Comme cela est illustré sur la figure 1, le module électronique de puissance 1 comprend un joint d'interconnexion électrique et/ou mécanique 7 par l'intermédiaire duquel la couche métallique 2c inférieure du substrat 2 est rapportée sur la semelle 5.  The lower metal layer 2c of the substrate 2 is attached to the metal soleplate 5 whose function is to spread the heat flux and to provide a thermal connection with a metal heat sink 6. As illustrated in FIG. 1, the power electronic module 1 comprises an electrical and / or mechanical interconnection joint 7 through which the lower metal layer 2c of the substrate 2 is attached to the soleplate 5.
La semelle 5 est elle-même rapportée sur le dissipateur thermique 6 métallique par l'intermédiaire d'une couche 8 de matériau d'interface thermique, telle qu'une graisse thermique, un film élastomère, ou de matériaux à changement de phase. La couche 8 de matériau d'interface thermique permet de réduire la résistance thermique de contact entre la semelle 5 et le dissipateur thermique 6 pour assurer une meilleure évacuation du flux thermique. Le dissipateur thermique 6, est muni d'ailettes 9 permettant de réduire d'autant plus la résistance thermique de ce dernier, les ailettes 9 étant traversées par un fluide de refroidissement, par exemple de l'air.  The sole 5 is itself attached to the heat sink 6 metal through a layer 8 of thermal interface material, such as thermal grease, elastomeric film, or phase change materials. The layer 8 of thermal interface material reduces the thermal contact resistance between the sole 5 and the heat sink 6 to ensure better evacuation of the heat flow. The heat sink 6 is provided with fins 9 to further reduce the thermal resistance of the latter, the fins 9 being traversed by a cooling fluid, for example air.
Un tel module électronique de puissance 1 présente cependant plusieurs inconvénients.  Such an electronic power module 1, however, has several disadvantages.
La couche électriquement isolante 2a du substrat 2 ainsi que la couche 8 de matériau d'interface thermique sont des couches à forte résistance thermique et donc à mauvaise conduction thermique. Elles limitent ainsi la dissipation thermique générée au sein des composants à semi-conducteur de puissance 3 vers le dissipateur thermique 6 et le fluide de refroidissement. Par ailleurs, la couche 8 de matériau d'interface thermique induit une résistance thermique non homogène, qui dépend du positionnement des composants à semi-conducteurs de puissance 3 sur le circuit de puissance, notamment si ce dernier présente un défaut de planéité. La multiplicité des couches 2a, 2b, 2c, 4, 5, 7, 8 entre les composants à semi-conducteur de puissance 3 et le dissipateur thermique 6 contribue également à cette forte résistance thermique. Le refroidissement du module électronique de puissance 1 est donc limité et le module électronique de puissance 1 n'est pas adapté pour des applications à hautes températures, c'est-à-dire à des températures ambiantes supérieures ou égales à 175°C du fait de la présence de matériaux organiques (matériaux d'interface thermique, l'encapsulant, le joint adhésif et le boîtier) qui se dégradent généralement rapidement au- delà de 175 °C. Notons que les composants à semi-conducteurs grand gap (SiC, GaN,...) peuvent fonctionner au-delà des limites classiques des composants en Si (175°C) et afin de profiter de l'opportunité de fonctionner à haute température, tous les éléments constituants le module électronique de puissance doivent être capables de fonctionner d'une façon fiable à haute température. The electrically insulating layer 2a of the substrate 2 as well as the layer 8 of thermal interface material are layers with high thermal resistance and therefore poor heat conduction. They thus limit the heat dissipation generated within the power semiconductor components 3 to the heat sink 6 and the cooling fluid. Furthermore, the layer 8 of thermal interface material induces a non-homogeneous thermal resistance, which depends on the positioning power semiconductor components 3 on the power circuit, especially if the latter has a flatness defect. The multiplicity of layers 2a, 2b, 2c, 4, 5, 7, 8 between the power semiconductor components 3 and the heat sink 6 also contributes to this high thermal resistance. The cooling of the electronic power module 1 is therefore limited and the electronic power module 1 is not suitable for applications at high temperatures, that is to say at ambient temperatures greater than or equal to 175 ° C due to the presence of organic materials (thermal interface materials, the encapsulant, the adhesive seal and the housing) which generally degrade rapidly above 175 ° C. Note that large-gap semiconductor components (SiC, GaN, ...) can operate beyond the conventional limits of Si components (175 ° C) and to take advantage of the opportunity to operate at high temperatures, all components of the electronic power module must be capable of reliable operation at high temperatures.
Par ailleurs, les solutions d'assemblage des différentes couches 2a, 2b, 2c, 5 ayant des coefficients de dilatation thermique différents entre elles rendent le module électronique de puissance 1 sensible au phénomène de fatigue thermique, limitant de ce fait la fiabilité du module électronique de puissance 1. Ces solutions peuvent par exemple entraîner des fissures dans la couche électriquement isolante 2a du substrat 2 et/ou dans les joints d'interconnexion électriques 4, 7.  Furthermore, the assembly solutions of the different layers 2a, 2b, 2c, 5 having different thermal expansion coefficients between them make the power electronic module 1 sensitive to the phenomenon of thermal fatigue, thus limiting the reliability of the electronic module These solutions may for example cause cracks in the electrically insulating layer 2a of the substrate 2 and / or in the electrical interconnection joints 4, 7.
En outre, les gravures appliquées sur la couche métallique 2b supérieure du substrat 2 créent une asymétrie avec la couche métallique 2c inférieure par rapport à la couche électriquement isolante 2a. Cela a pour effet, lors d'une montée en température, par exemple lorsque les composants à semi-conducteur de puissance 3 sont assemblés au substrat 2 ou lorsque le substrat 2 est assemblé à la semelle 5 ou lors d'une phase opérationnelle du module électronique de puissance 1, d'induire des contraintes thermomécaniques dans le substrat 2 entraînant sa déformation. Cette déformation est appelée flèche et correspond à une cambrure du substrat 2.  In addition, the etchings applied to the upper metal layer 2b of the substrate 2 create an asymmetry with the lower metal layer 2c with respect to the electrically insulating layer 2a. This has the effect, during a rise in temperature, for example when the power semiconductor components 3 are assembled to the substrate 2 or when the substrate 2 is assembled to the sole 5 or during an operational phase of the module power electronics 1, to induce thermomechanical stresses in the substrate 2 causing its deformation. This deformation is called arrow and corresponds to a camber of the substrate 2.
Une telle flèche du substrat 2 va créer un vide qui peut être compensé par la couche 8 de matériau d'interface thermique. Toutefois, comme précédemment expliqué, cette couche 8 limite la dissipation thermique entre les composants à semi-conducteur de puissance 3 et le dissipateur thermique 6 et induit une résistance thermique non homogène qui dépend du positionnement des composants à semi-conducteurs de puissance 3 sur le circuit de puissance. On ne peut donc pas compenser la flèche du substrat 2 en augmentant l'épaisseur de la couche 8 de matériau d'interface thermique sans détériorer davantage la dissipation thermique au sein du module électronique de puissance 1. Objet et résumé de l'invention Such an arrow of the substrate 2 will create a vacuum which can be compensated by the layer 8 of thermal interface material. However, as previously explained, this layer 8 limits the heat dissipation between the power semiconductor components 3 and the heat sink 6 and induces a nonhomogeneous thermal resistance which depends on the positioning of the power semiconductor components 3 on the power circuit. power. It is therefore not possible to compensate for the deflection of the substrate 2 by increasing the thickness of the layer 8 of thermal interface material without further deteriorating the heat dissipation within the power electronic module 1. Object and summary of the invention
L'invention vise à pallier les inconvénients des modules électroniques de puissance mentionnés ci-dessus.  The invention aims to overcome the disadvantages of power electronic modules mentioned above.
Un objet de l'invention propose un procédé de fabrication d'un module électronique de puissance par fabrication additive, le module électronique comprenant un substrat comportant une plaque isolante, telle qu'une plaque de céramique, présentant une première et une seconde faces opposées, et une première couche métallique disposée directement sur la première face de la plaque isolante et une seconde couche métallique disposée directement sur la seconde face de la plaque isolante.  An object of the invention proposes a method of manufacturing an electronic module of power by additive manufacturing, the electronic module comprising a substrate comprising an insulating plate, such as a ceramic plate, having first and second opposite faces, and a first metal layer disposed directly on the first face of the insulating plate and a second metal layer disposed directly on the second face of the insulating plate.
Selon une caractéristique générale de l'invention, au moins une des couches métalliques est réalisée par une étape de dépôt d'une couche mince de métal et une étape de recuit de la couche métallique, généralement à une température de l'ordre de 700°C, et le procédé comprend en outre une étape de formation d'au moins une couche de transition thermomécanique sur au moins l'une des première et seconde couches métalliques, ladite au moins une couche de transition thermomécanique comportant un matériau présentant un coefficient de dilatation thermique (CTE) inférieur à celui du cuivre.  According to a general characteristic of the invention, at least one of the metal layers is produced by a step of depositing a thin layer of metal and a step of annealing the metal layer, generally at a temperature of the order of 700.degree. C, and the method further comprises a step of forming at least one thermomechanical transition layer on at least one of the first and second metal layers, said at least one thermomechanical transition layer comprising a material having a coefficient of expansion thermal (CTE) lower than that of copper.
L'étape de dépôt d'une couche mince de métal peut comprendre un dépôt par sérigraphie ou un dépôt d'une couche métallique mince à partir d'une pâtes ou d'une encre en utilisant des techniques dites en anglais de « direct writing process » telles que les techniques suivantes par exemple : « inkjet process », « extrusion based process », « aérosol based process ».  The deposition step of a thin layer of metal may comprise a screen-printing deposit or a deposition of a thin metal layer from a paste or an ink by using so-called "direct writing process" techniques. Such as the following techniques for example: "inkjet process", "extrusion based process", "aerosol based process".
La couche de transition thermomécanique du substrat selon l'invention permet, grâce au CTE réduit qu'elle présente par rapport à la couche métallique, d'augmenter la fiabilité thermomécanique du substrat comparé à un substrat à liaison directe de cuivre (DBC), et elle permet de limiter les problèmes liés à la cambrure des substrats, observés pour des substrats céramiques (DBC et AMB). The thermomechanical transition layer of the substrate according to the invention makes it possible, thanks to the reduced CTE that it has with respect to the metal layer, to increase the thermomechanical reliability of the substrate compared to a copper direct-bonded substrate (DBC), and it makes it possible to limit the problems related to the arching of the substrates, observed for ceramic substrates (DBC and AMB).
Le procédé de fabrication utilisant une fabrication additive pour chaque étape de formation d'une nouvelle couche du substrat, le procédé permet d'éviter toute perte de matière lors de la fabrication du module électronique de puissance grâce au dépôt et à la fusion sélective des couches.  Since the manufacturing method uses additive manufacturing for each step of forming a new layer of the substrate, the method makes it possible to avoid any loss of material during the manufacture of the electronic power module by depositing and selectively melting the layers. .
La fabrication additive (FA), nommée aussi impression 3D, est une technique permettant de réaliser des objets en faisant ajouter des couches successives. Une source de puissance vient amener de l'énergie dans des endroits bien définis à la poudre déposée par couche mince (typiquemen lOOpm) pour l'agglomérer. La succession de dépôt de couches et de leur agglomération sélective permet ainsi de construire un matériau dense avec une forme bien définie. La sélectivité des parties agglomérées, permet ainsi de donner à l'objet directement la forme souhaitable même si cette dernière est complexe. Elle permet aussi de limiter les pertes en matériaux qui peuvent être extrêmement désirable pour les matériaux chers et rares.  Additive manufacturing (FA), also known as 3D printing, is a technique for making objects by adding successive layers. A power source comes to bring energy in well-defined places to the powder deposited by thin layer (typically 100pm) to agglomerate it. The succession of layer deposition and their selective agglomeration thus makes it possible to construct a dense material with a well-defined shape. The selectivity of the agglomerated parts makes it possible to give the object directly the desirable shape even if the latter is complex. It also limits the loss of materials that can be extremely desirable for expensive and rare materials.
En effet, dans le cas d'un substrat classique de l'état de la technique, les couches de cuivre Cu de la face supérieure et inférieure couvrent complètement la surface de la céramique et sont reportées en direct sur la céramique en utilisant la technologie DBC ou en utilisant la technologie de brasage AMB. Une étape de gravure permet ensuite d'enlever le cuivre Cu localement sur la face supérieure et de réaliser des pistes non connectées électriquement servant comme circuit électrique.  Indeed, in the case of a conventional substrate of the state of the art, copper Cu layers of the upper and lower face completely cover the surface of the ceramic and are reported directly on the ceramic using DBC technology or using AMB soldering technology. An etching step then makes it possible to remove copper Cu locally on the upper face and to make electrically unconnected tracks serving as an electrical circuit.
Selon un premier aspect du procédé, ladite au moins une couche de transition thermomécanique peut être déposée par dépôt d'un lit de poudre de matériau ou par projections de poudre de matériau, la poudre déposée étant figée ensuite par balayage d'une source de puissance calorifique sous atmosphère inerte.  According to a first aspect of the method, said at least one thermomechanical transition layer may be deposited by deposition of a bed of material powder or by spraying of powder of material, the deposited powder being then frozen by scanning a power source. heat in an inert atmosphere.
Typiquement dans les substrats de l'état de la technique, l'épaisseur de la céramique est entre 300pm et lOOOpm et l'épaisseur de cuivre entre 200 pm et 500 pm. Or, il a été démontré que plus l'épaisseur de cuivre est élevée, moins le substrat est fiable lors des cycles thermiques conduisant de fortes contraintes thermomécaniques. Typically in the substrates of the state of the art, the thickness of the ceramic is between 300 μm and 1000 μm and the thickness of copper between 200 μm and 500 μm. However, it has been shown that the greater the thickness of copper, the less the substrate is reliable during thermal cycles leading to high thermomechanical stresses.
La fabrication additive utilisée par le procédé selon l'invention permet de réaliser et d'utiliser des couches de cuivre minces, c'est-à-dire inférieures à 100 pm et plus particulièrement comprises entre 20 pm et 50 pm, offrant une meilleure fiabilité. En outre, la superposition des couches de transition thermomécanique en matériau différent du cuivre permet d'augmenter l'épaisseur des pistes et ainsi d'augmenter le courant acceptable dans les pistes sans limiter la fiabilité des substrats.  The additive manufacturing used by the process according to the invention makes it possible to produce and use thin copper layers, that is to say less than 100 μm and more particularly between 20 μm and 50 μm, offering better reliability. . In addition, the superposition of thermomechanical transition layers in a material different from copper makes it possible to increase the thickness of the tracks and thus to increase the acceptable current in the tracks without limiting the reliability of the substrates.
L'utilisation des métaux en fabrication additive nécessite en général une source de puissance permettant d'amener une puissance nécessaire, par exemple allant de 100 W à 1 kW, pour faire fondre ou fritter la poudre métallique déposée pendant le procédé de fabrication additive sous forme d'un lit de poudre ou par projection de poudre localisée. La source de puissance (faisceau laser ou faisceau d'électrons) vient cibler les zones où il est souhaitable d'avoir du matériau dense afin d'avoir à chaque passage une couche densifiée et figée.  The use of metals in additive manufacturing generally requires a source of power to bring a necessary power, for example from 100 W to 1 kW, to melt or sinter the metal powder deposited during the additive manufacturing process in form a bed of powder or by localized powder projection. The power source (laser beam or electron beam) targets the areas where it is desirable to have dense material to have each passage a densified and frozen layer.
L'épaisseur typique d'une couche déposée peut varier entre 20 pm et 150 pm. Une nouvelle couche est ensuite déposée et figée par un balayage de la source de puissance sur la zone à figer. La succession des étapes de dépôt de couches et leur densification permettent d'obtenir l'objet avec la forme désirée.  The typical thickness of a deposited layer may vary between 20 μm and 150 μm. A new layer is then deposited and frozen by a scan of the power source on the area to be frozen. The succession of layers deposition steps and their densification make it possible to obtain the object with the desired shape.
Selon un deuxième aspect du procédé, le CTE des matériaux utilisées pour les couches de transition thermomécanique est compris entre 3 ppm/°C et 17 ppm/°C.  According to a second aspect of the process, the CTE of the materials used for the thermomechanical transition layers is between 3 ppm / ° C and 17 ppm / ° C.
Les couches de transition thermomécanique présentent ainsi un CTE compris entre celui de la couche métallique et le CTE des composants à semi-conducteurs de puissance destinés à être montés sur le module électronique de puissance.  The thermomechanical transition layers thus have a CTE between that of the metal layer and the CTE of the power semiconductor components intended to be mounted on the electronic power module.
Selon un troisième aspect du procédé, le substrat comprend, sur au moins une des première et seconde faces de la plaque isolante, un empilement d'une couche métallique et d'une pluralité de couches de transition thermomécanique, ledit au moins un empilement présentant un gradient de CTE.  According to a third aspect of the method, the substrate comprises, on at least one of the first and second faces of the insulating plate, a stack of a metal layer and a plurality of thermomechanical transition layers, said at least one stack having a gradient of CTE.
Cette adaptation de CTE entre le cuivre et les composants à semi-conducteurs de puissance permet de minimiser les contraintes mécaniques lors des cycles thermiques dans la céramique et dans le joint d'interconnexion entre le métal et le semi-conducteur respectivement, le joint d'interconnexion correspondant à la brasure pour monter le semiconducteur sur les couches de transition thermique et d'obtenir ainsi une meilleure fiabilité des modules électroniques de puissance. This adaptation of CTE between copper and power semiconductor components minimizes the constraints during the thermal cycles in the ceramic and in the interconnection joint between the metal and the semiconductor, respectively, the interconnection joint corresponding to the solder to mount the semiconductor on the thermal transition layers and thus obtain a better reliability of electronic power modules.
Selon un quatrième aspect du procédé, le procédé comprend en outre une étape de formation d'un radiateur par fabrication additive à partir de la dernière couche de transition thermomécanique de la seconde face du substrat, la seconde face du substrat comprenant la seconde couche de cuivre.  According to a fourth aspect of the method, the method further comprises a step of forming a radiator by additive manufacturing from the last thermomechanical transition layer of the second face of the substrate, the second face of the substrate comprising the second copper layer .
La formation par fabrication additive d'une zone de transition thermomécanique comprenant un radiateur permet de diminuer la résistance thermique du module électronique de puissance et d'éliminer le matériau d'interface thermique utilisé dans l'état de la technique. Le matériau d'interface thermique est généralement une graisse thermique. La suppression de l'interface thermique permet d'éliminer les points faibles qui lui sont associés relatifs notamment à sa faible conductivité thermique et sa dégradation à haute température.  The additive manufacturing formation of a thermomechanical transition zone comprising a radiator makes it possible to reduce the thermal resistance of the electronic power module and to eliminate the thermal interface material used in the state of the art. The thermal interface material is generally a thermal grease. The deletion of the thermal interface makes it possible to eliminate the weak points associated with it, in particular as regards its low thermal conductivity and its degradation at high temperature.
Cela a également pour conséquence de permettre l'utilisation du module électronique de puissance à de très hautes températures et à de fortes puissances.  This also allows the use of the electronic power module at very high temperatures and high power.
En outre, la fabrication du radiateur par fabrication additive offre la possibilité de fabriquer des radiateurs avec des géométries complexes permettant un refroidissement efficace sous air et souvent trop complexes à réaliser avec les technologies classiquement connues pour la fabrication des radiateurs.  In addition, the manufacture of the radiator by additive manufacturing offers the possibility of manufacturing radiators with complex geometries for efficient cooling in air and often too complex to achieve with conventional technologies known for the manufacture of radiators.
Selon un cinquième aspect du procédé, le procédé comprend en outre, une étape de réalisation d'un boîtier apte à protéger les composants électroniques destinés à être montés sur la première face du substrat et de réalisation des connectiques aptes à raccorder électriquement le module électronique à des éléments électriques externes, le boîtier et les connectiques étant réalisés par fabrication additive à partir de la dernière couche de transition thermomécanique de la première face du substrat, la première face du substrat comprenant la première couche de cuivre. La réalisation du boîtier par fabrication additive à partir de la dernière couche de transition thermomécanique du substrat offre la possibilité de réaliser des boîtiers hermétiques avec des isolations (gaz isolant avec ou sans pression, vide poussé, liquide isolant, etc.) différentes de celles assurées par des matériaux organiques utilisés classiquement tels que les gels ou époxy. According to a fifth aspect of the method, the method further comprises a step of producing a housing capable of protecting the electronic components intended to be mounted on the first face of the substrate and of making connectors capable of electrically connecting the electronic module to external electrical elements, the housing and the connectors being made by additive manufacturing from the last thermomechanical transition layer of the first face of the substrate, the first face of the substrate comprising the first copper layer. The realization of the housing by additive manufacturing from the last thermomechanical transition layer of the substrate offers the possibility of making hermetic packages with insulations (insulating gas with or without pressure, high vacuum, insulating liquid, etc.) different from those provided. by conventionally used organic materials such as gels or epoxies.
En outre, la fabrication du boîtier métallique par impression 3D permet de supprimer les polymères présents dans l'état de la technique dans les joints adhésifs utilisés pour coller le boîtier, dans le boîtier et le gel silicone encapsulant les composants électroniques.  In addition, the manufacture of the metal case by 3D printing makes it possible to eliminate the polymers present in the state of the art in the adhesive seals used to glue the case, in the case and the silicone gel encapsulating the electronic components.
La suppression des polymères qui présentent une faible stabilité thermique à des températures supérieures à 175°C et la suppression du matériau d'interface thermique permettent une utilisation du module électronique de puissance dans des températures supérieures à 200 °C.  Removal of polymers with low thermal stability at temperatures above 175 ° C and removal of the thermal interface material allows use of the power electronics module at temperatures above 200 ° C.
Des modules électroniques de puissance fonctionnant dans cette gamme de température sont particulièrement intéressants pour des applications aéronautiques, vu qu'ils permettent de ramener l'électronique de commande au plus proche des sources chaudes que sont par exemple les freins ou le moteur, pour avoir des systèmes plus intégrés et pouvoir gagner ainsi en volume.  Electronic power modules operating in this temperature range are particularly interesting for aeronautical applications, since they make it possible to bring the control electronics closer to the hot springs that are for example the brakes or the engine, to have more integrated systems and thus gain in volume.
L'augmentation de la température environnante autorisée permet également de réduire les dimensions du système de refroidissement et ainsi d'augmenter la densité de puissance du convertisseur de puissance.  The increase in the allowed ambient temperature also makes it possible to reduce the dimensions of the cooling system and thus to increase the power density of the power converter.
Le boîtier métallique permet également d'assurer un blindage électromagnétique du module électronique de puissance et réduisant ainsi l'effet des perturbations électromagnétiques externes sur les composants électroniques du module.  The metal case also provides electromagnetic shielding of the electronic power module and thus reduces the effect of external electromagnetic disturbances on the electronic components of the module.
Un autre objet de l'invention propose un substrat pour module électronique de puissance, le substrat comprenant une plaque isolante présentant une première et une seconde faces opposées, et une première couche métallique disposée directement sur la première face de la plaque isolante et une seconde couche métallique disposée directement sur la seconde face de la plaque isolante. Le substrat comprend, sur au moins l'une des première et seconde couches métalliques, au moins une couche de transition thermomécanique comportant un matériau présentant un coefficient de dilatation thermique inférieur à celui du métal de la couche métallique. Another object of the invention provides a substrate for an electronic power module, the substrate comprising an insulating plate having first and second opposite faces, and a first metal layer disposed directly on the first face of the insulating plate and a second layer. metal arranged directly on the second face of the insulating plate. The substrate comprises, on at least one of the first and second metal layers, at least one thermomechanical transition layer comprising a material having a coefficient of thermal expansion less than that of the metal of the metal layer.
Encore un autre objet de l'invention propose un module électronique de puissance comprenant un substrat présentant une première face et une seconde face opposée à la première face, et un radiateur monté sur la seconde face du substrat, la première face du substrat étant destinée à recevoir des composants électroniques, le substrat correspondant au substrat tel que défini ci-dessus. Brève description des dessins.  Yet another object of the invention proposes an electronic power module comprising a substrate having a first face and a second face opposite to the first face, and a radiator mounted on the second face of the substrate, the first face of the substrate being intended for receive electronic components, the substrate corresponding to the substrate as defined above. Brief description of the drawings.
L'invention sera mieux comprise à la lecture faite ci-après, à titre indicatif mais non limitatif, en référence aux dessins annexés sur lesquels :  The invention will be better understood on reading the following, by way of indication but without limitation, with reference to the accompanying drawings in which:
- la figure 1, déjà décrite, illustre un exemple de module électronique de puissance connu de l'art antérieur ;  FIG. 1, already described, illustrates an exemplary electronic power module known from the prior art;
- la figure 2 présente une représentation schématique d'un module électronique de puissance selon un mode de réalisation de l'invention ;  FIG. 2 shows a schematic representation of an electronic power module according to one embodiment of the invention;
- la figure 3 présente un logigramme d'un procédé de fabrication d'un module électronique de puissance selon un mode de mise en œuvre de l'invention.  - Figure 3 shows a logic diagram of a method of manufacturing an electronic power module according to an embodiment of the invention.
Description détaillée de modes de réalisation Detailed description of embodiments
Sur la figure 2 est représenté schématiquement un module électronique de puissance 20 selon un mode de réalisation de l'invention.  FIG. 2 diagrammatically shows an electronic power module 20 according to one embodiment of the invention.
Le module électronique de puissance 20 comprend un substrat 21, un boîtier 22 et un radiateur 23.  The electronic power module 20 comprises a substrate 21, a housing 22 and a radiator 23.
Le substrat 21 comprend une plaque isolante 24 en céramique, Al203 ou AIN par exemple, présentant une première face 24a et une seconde face 24b opposée à la première face 24a. La plaque isolante 24 comprend en outre une première couche de cuivre 25a et une seconde couche de cuivre 25b déposées par sérigraphie, respectivement sur la première face 24a et sur la seconde face 24b de la plaque isolante 24, et ayant subie un recuit. La première couche de cuivre 25a forme des pistes électriquement conductrices destinées à être raccordées à des composants électroniques 26, et la seconde couche de cuivre 25b forme des pistes thermiquement conductrices destinées à être thermiquement couplée au radiateur 23. The substrate 21 comprises a ceramic insulating plate 24, Al 2 0 3 or AlN for example, having a first face 24a and a second face 24b opposite to the first face 24a. The insulating plate 24 further comprises a first copper layer 25a and a second copper layer 25b deposited by screen printing, respectively on the first face 24a and on the second face 24b of the insulating plate 24, and having undergone annealing. The first copper layer 25a forms electrically conductive tracks for connection to electronic components 26, and the second copper layer 25b forms tracks. thermally conductive elements intended to be thermally coupled to the radiator 23.
Le substrat 21 comprend également une première superposition 27a de couches de transition thermomécanique et une seconde superposition 27b de couches de transition thermomécanique.  The substrate 21 also comprises a first superposition 27a of thermomechanical transition layers and a second superposition 27b of thermomechanical transition layers.
La première superposition 27a est disposée sur la première couche de cuivre 25a. Elle comprend, dans le mode de réalisation illustré, trois couches de transition thermomécanique référencées 271 à 273, chaque couche de transition thermomécanique 271 à 273 étant formée par fabrication additive à partir d'un matériau électriquement conducteur présentant un coefficient de dilatation thermique, noté également CTE pour l'expression anglaise « coefficient of thermal expansion », inférieur à celui du cuivre qui est généralement de l'ordre de 17 ppm/°C.  The first superposition 27a is disposed on the first copper layer 25a. It comprises, in the illustrated embodiment, three thermomechanical transition layers referenced 271 to 273, each thermomechanical transition layer 271 to 273 being formed by additive manufacturing from an electrically conductive material having a coefficient of thermal expansion, also noted CTE for the English expression "coefficient of thermal expansion", lower than that of copper which is generally of the order of 17 ppm / ° C.
Dans le mode de réalisation illustré sur la figure 2, la première couche de transition thermomécanique 271 de la première superposition 27a présente un CTE de l'ordre de 13 ppm/°C, la deuxième couche de transition thermomécanique 272 présente un CTE de l'ordre de 10 ppm/°C et la troisième couche de transition thermomécanique 273 présente un CTE de l'ordre de 7 ppm/°C. La première couche de transition thermomécanique 271 de la première superposition 27a est comprise entre la première couche de cuivre 25a et la deuxième couche de transition thermomécanique 272, et la deuxième couche de transition thermomécanique 272 est comprise entre la première couche thermomécanique 271 et la troisième couche de transition thermomécanique 273.  In the embodiment illustrated in FIG. 2, the first thermomechanical transition layer 271 of the first superposition 27a has a CTE of the order of 13 ppm / ° C., the second thermomechanical transition layer 272 has a CTE of the order of 10 ppm / ° C and the third thermomechanical transition layer 273 has a CTE of the order of 7 ppm / ° C. The first thermomechanical transition layer 271 of the first superposition 27a is between the first copper layer 25a and the second thermomechanical transition layer 272, and the second thermomechanical transition layer 272 is between the first thermomechanical layer 271 and the third layer Thermomechanical transition 273.
La première couche de cuivre 25a et la première superposition 27a forme ainsi un premier empilement 28a présentant un gradient de CTE, le CTE diminuant en fonction de l'éloignement de la couche avec la première face 24a la plaque isolante 24 en céramique.  The first copper layer 25a and the first superposition 27a thus forms a first stack 28a having a gradient of CTE, the CTE decreasing as a function of the distance of the layer with the first face 24a the insulating plate 24 ceramic.
La seconde superposition 27b est disposée sur la seconde couche de cuivre 25b. Elle comprend, dans le mode de réalisation illustré, trois couches de transition thermomécanique référencées 274 à 276, chaque couche de transition thermomécanique 274 à 276 étant formée par fabrication additive à partir d'un matériau thermiquement conducteur présentant un CTE inférieur à celui du cuivre. Dans le mode de réalisation illustré sur la figure 2, la première couche de transition thermomécanique 274 de la seconde superposition 27b présente un CTE de l'ordre de 13 ppm/°C, la deuxième couche de transition thermomécanique 275 présente un CTE de l'ordre de 10 ppm/°C et la troisième couche de transition thermomécanique 276 présente un CTE de l'ordre de 7 ppm/°C. La première couche de transition thermomécanique 274 de la seconde superposition 27b est comprise entre la seconde couche de cuivre 25b et la deuxième couche de transition thermomécanique 275, et la deuxième couche de transition thermomécanique 275 est comprise entre la première couche thermomécanique 274 et la troisième couche de transition thermomécanique 276. The second superposition 27b is disposed on the second copper layer 25b. It comprises, in the illustrated embodiment, three thermomechanical transition layers referenced 274 to 276, each thermomechanical transition layer 274 to 276 being formed by additive manufacturing from a thermally conductive material having a CTE lower than that of copper. In the embodiment illustrated in FIG. 2, the first thermomechanical transition layer 274 of the second superposition 27b has a CTE of the order of 13 ppm / ° C, the second thermomechanical transition layer 275 has a CTE of order of 10 ppm / ° C and the third thermomechanical transition layer 276 has a CTE of the order of 7 ppm / ° C. The first thermomechanical transition layer 274 of the second superposition 27b is between the second copper layer 25b and the second thermomechanical transition layer 275, and the second thermomechanical transition layer 275 is between the first thermomechanical layer 274 and the third layer thermomechanical transition 276.
La seconde couche de cuivre 25b et la seconde superposition 27b forme ainsi un second empilement 28b présentant un gradient de CTE, le CTE diminuant en fonction de l'éloignement de la couche avec seconde face 24b de la plaque isolante 24 en céramique.  The second copper layer 25b and the second superposition 27b thus form a second stack 28b having a gradient of CTE, the CTE decreasing as a function of the distance of the layer with the second face 24b of the insulating plate 24 ceramic.
Le substrat 21 comprend la plaque isolante de céramique 24, le premier empilement 28a et le second empilement 28b. Dans chacun des empilements 28a et 28b, le CTE varie à l'intérieur de l'empilement, dans le mode de réalisation illustré, entre 17 ppm/°C pour la couche de cuivre 25a ou 25b et un CTE supérieur ou égal à 3 à 4 ppm/°C pour se rapprocher du CTE de la plaque isolante 24 en céramique qui présente un CTE de 7 ppm/°C ou des composants électroniques 26 semi-conducteurs qui peuvent présenter un CTE de l'ordre de 3 à 4 ppm/°C.  The substrate 21 comprises the ceramic insulating plate 24, the first stack 28a and the second stack 28b. In each of the stacks 28a and 28b, the CTE varies within the stack, in the illustrated embodiment, between 17 ppm / ° C for the copper layer 25a or 25b and a CTE greater than or equal to 3 to 4 ppm / ° C to approach the CTE ceramic insulating plate 24 which has a CTE of 7 ppm / ° C or electronic components 26 semiconductors that can have a CTE of the order of 3 to 4 ppm / ° C.
Le gradient de CTE présenté par les premier et second empilements 28a et 28b du substrat permet d'améliorer la fiabilité du substrat et d'offrir une faible variation de cambrure en fonction de la température avec des métallisations épaisses.  The gradient of CTE presented by the first and second stacks 28a and 28b of the substrate makes it possible to improve the reliability of the substrate and to offer a small variation of camber as a function of temperature with thick metallizations.
Dans le mode de réalisation illustré sur la figure 2, le radiateur 23 du module électronique de puissance 20 est formé à partir de la troisième couche de transition thermomécanique 276 de la seconde superposition 27b.  In the embodiment illustrated in FIG. 2, the radiator 23 of the power electronic module 20 is formed from the third thermomechanical transition layer 276 of the second superposition 27b.
Ainsi, le second empilement 28b comprend le radiateur et est entièrement réalisé par fabrication additive et présente un gradient de CTE, le CTE diminuant graduellement entre la seconde couche de cuivre 25b et le radiateur 23. De manière similaire, le boîtier 22 du module électronique de puissance 20 est formé à partir de la troisième couche de transition thermomécanique 273 de la première superposition 27a. Le boîtier 22 permet d'encapsuler hermétiquement les composants électroniques 26 montés sur la troisième couche de transition thermomécanique 273 de la première superposition 27a. Thus, the second stack 28b comprises the radiator and is made entirely by additive manufacturing and has a CTE gradient, the CTE decreasing gradually between the second copper layer 25b and the radiator 23. Similarly, the housing 22 of the power electronics module 20 is formed from the third thermomechanical transition layer 273 of the first superposition 27a. The housing 22 can hermetically encapsulate the electronic components 26 mounted on the third thermomechanical transition layer 273 of the first superposition 27a.
Ainsi le premier empilement 28a comprend le boîtier 22 et est entièrement réalisé par fabrication additive, et présente un gradient de CTE, le CTE diminuant graduellement entre la première couche de cuivre 25a et le boîtier 22.  Thus the first stack 28a comprises the housing 22 and is made entirely by additive manufacturing, and has a gradient of CTE, the CTE decreasing gradually between the first copper layer 25a and the housing 22.
Le module électronique de puissance 20 comprend également des connectiques 29 permettant de raccorder le module électronique 20 à des éléments électriques extérieurs non représentés. Les connectiques 29 sont également formées à partir de la troisième couche de transition thermomécanique 273 de la première superposition 27a.  The electronic power module 20 also comprises connectors 29 for connecting the electronic module 20 to external electrical elements not shown. Connectors 29 are also formed from the third thermomechanical transition layer 273 of the first superposition 27a.
Pour des raisons de simplification et de clarté la figure 2, la partie formant le capot du boîtier 22 n'a pas été représentée, mais peut être également formée par fabrication additive étant donné qu'elle est partie intégrante du boîtier 22 ou faite séparément et attaché au boîtier après.  For reasons of simplicity and clarity in FIG. 2, the part forming the cover of the housing 22 has not been shown, but can also be formed by additive manufacturing since it is an integral part of the housing 22 or made separately and attached to the case after.
Dans le mode de réalisation illustré sur la figure 2, les composants électroniques 26, notamment les composants semiconducteurs, sont fixés et raccordés à la troisième couche de transition thermomécanique 273 de la première superposition par des brasures 30.  In the embodiment illustrated in FIG. 2, the electronic components 26, in particular the semiconductor components, are fixed and connected to the third thermomechanical transition layer 273 of the first superposition by solders 30.
Sur la figure 3 est représenté un logigramme d'un procédé de fabrication du module électronique de puissance 20 de la figure 2 selon un mode de mise en œuvre de l'invention.  FIG. 3 shows a logic diagram of a manufacturing method of the electronic power module 20 of FIG. 2 according to one embodiment of the invention.
Dans une première étape 100 du procédé, une pâte de cuivre compatible avec la céramique de la plaque 24 est déposée par sérigraphie en couche mince, typiquement entre 20 et 50 pm, sur la seconde face 24b de la plaque isolante 24 en céramique, la seconde face 24b correspondant à la face inférieure sur la figure 2, et sur la première face 24a qui correspond à la face supérieure sur la figure 2. Sur la première face 24a, la pâte de cuivre est déposée avec les motifs des pistes électriques envisagées alors que sur la seconde face 24b, la pâte de cuivre est déposée en pleine plaque, c'est-à-dire en couvrant toute la face inférieure 24b de la plaque isolante 24, la face inférieure 24b étant destinée au refroidissement du module électronique 20. In a first step 100 of the method, a copper paste compatible with the ceramic of the plate 24 is deposited by thin-film screen printing, typically between 20 and 50 μm, on the second face 24b of the ceramic insulating plate 24, the second 24b face corresponding to the lower face in Figure 2, and the first face 24a which corresponds to the upper face in Figure 2. On the first face 24a, the copper paste is deposited with the patterns of electrical tracks considered while on the second face 24b, the copper paste is deposited in full plate, that is to say covering the entire lower face 24b of the insulating plate 24, the lower face 24b being intended for cooling the electronic module 20.
Les pâtes de cuivre peuvent être, par exemple, des pâtes industrielles de type Heraeus ou C7720 qui sont compatibles avec une plaque en céramique Al203, ou bien des pâtes de type C7403 ou C7404 qui sont compatibles avec une céramique en AIN. The copper pastes may be, for example, Heraeus or C7720 type industrial pastes that are compatible with an Al 2 O 3 ceramic plate, or C7403 or C7404 type pastes that are compatible with an AlN ceramic.
Le procédé peut également comprendre, dans des variantes, l'utilisation d'autres techniques de dépôt de couches métalliques minces à partir des pâtes ou des encres comme les techniques dites de direct writing process (inkjet process, extrusion based process, aérosol based process,...).  The method may also comprise, in variants, the use of other techniques for deposition of thin metal layers from pastes or inks such as so-called direct inkjet process (inkjet process, extrusion based process, aerosol based process, ...).
Dans une étape suivante 110, un recuit des première et seconde couches de pâte de cuivre 25a et 25b est ensuite réalisé à une température de l'ordre de 700 °C pour éliminer les solvants et les autres matières organiques et pour fritter les particules de cuivre.  In a following step 110, annealing of the first and second layers of copper paste 25a and 25b is then carried out at a temperature of the order of 700 ° C to remove solvents and other organic materials and to sinter the copper particles .
Les première et seconde couches de cuivre 25a et 25b obtenues après le recuit assurent une bonne adhésion à la céramique de la plaque isolante 24 et présentent une bonne soudabilité pour la couche de transition thermomécanique, respectivement 271 et 274, qui sera agglomérée sur la couche de cuivre correspondante 25a ou 25b par un échauffement local produit par un laser ou un faisceau d'électrons par exemple.  The first and second copper layers 25a and 25b obtained after the annealing ensure good adhesion to the ceramic of the insulating plate 24 and have good weldability for the thermomechanical transition layer, respectively 271 and 274, which will be agglomerated on the coating layer. corresponding copper 25a or 25b by a local heating produced by a laser or an electron beam for example.
Dans une étape suivante 120 du procédé, on réalise une étape de formation des couches de transition thermomécanique 271 à 276 sur les couches de cuivre 25a et 25b.  In a next step 120 of the method, a thermomechanical transition layer 271 to 276 is formed on the copper layers 25a and 25b.
Pour la face inférieure du module électronique de puissance 20 formée à partir de la face inférieure 24b de la plaque isolante 24, des lits de poudre avec des matériaux ayant des CTE entre 7 et 17 ppm/°C sont déposées sur la seconde couche de cuivre 25b puis figées successivement par le balayage de la source de puissance sous atmosphère inerte, par exemple à l'aide d'Argon, sur toute la surface pour avoir une surface plane.  For the underside of the power electronics module 20 formed from the underside 24b of the insulating plate 24, powder beds with materials having CTEs between 7 and 17 ppm / ° C are deposited on the second copper layer. 25b and then frozen successively by scanning the power source under an inert atmosphere, for example using Argon, over the entire surface to have a flat surface.
Plus précisément, dans une première étape 121 de formation des couches de transition thermomécanique, on forme une première couche de transition thermomécanique 274 de la seconde superposition 27b sur la seconde couche de cuivre 25b en déposant un lit de poudre d'un matériau présentant un CTE de 13 ppm/°C sur toute la surface de la seconde couche de cuivre 25b, puis on fige la première couche de transition thermomécanique 274 de la seconde superposition 27b par le balayage d'un laser par exemple, sous atmosphère inerte sur toute la surface de la face inférieure 24b de la plaque de céramique 24. More precisely, in a first step 121 for forming the thermomechanical transition layers, a first thermomechanical transition layer 274 of the second superposition 27b is formed on the second copper layer 25b by depositing a bed of powder of a material having a CTE of 13 ppm / ° C over the entire surface of the second copper layer 25b, and then the first thermomechanical transition layer 274 of the second superposition 27b is frozen by the scanning of a laser for example, under an inert atmosphere over the entire surface of the lower face 24b of the ceramic plate 24.
Dans une deuxième étape 122 de formation des couches de transition thermomécanique, on forme une deuxième couche de transition thermomécanique 275 de la seconde superposition 27b en déposant sur la première couche de transition thermomécanique 274 un lit de poudre d'un matériau présentant un CTE de 10 ppm/°C sur toute la surface de la première couche de transition thermomécanique 274, puis on fige la deuxième couche de transition thermomécanique 275 de la seconde superposition 27b par le balayage d'un laser par exemple, sous atmosphère inerte sur toute la surface de la face inférieure 24b de la plaque de céramique 24.  In a second thermomechanical transition layer forming step 122, a second thermomechanical transition layer 275 of the second superposition 27b is formed by depositing on the first thermomechanical transition layer 274 a bed of powder of a material having a CTE of 10. ppm / ° C over the entire surface of the first thermomechanical transition layer 274, and then the second thermomechanical transition layer 275 of the second superposition 27b is frozen by scanning a laser, for example, under an inert atmosphere over the entire surface of the the lower face 24b of the ceramic plate 24.
Dans une troisième étape 123 de formation des couches de transition thermomécanique, on forme une troisième couche de transition thermomécanique 276 de la seconde superposition 27b en déposant sur la deuxième couche de transition thermomécanique 275 un lit de poudre d'un matériau présentant un CTE de 7 ppm/°C sur toute la surface de la deuxième couche de transition thermomécanique 275, puis on fige la troisième couche de transition thermomécanique 276 de la seconde superposition 27b par le balayage d'un laser par exemple, sous atmosphère inerte sur toute la surface de la face inférieure 24b de la plaque de céramique 24.  In a third thermomechanical transition layer forming step 123, a third thermomechanical transition layer 276 of the second superposition 27b is formed by depositing on the second thermomechanical transition layer 275 a bed of powder of a material having a CTE of 7. ppm / ° C over the entire surface of the second thermomechanical transition layer 275, then the third thermomechanical transition layer 276 of the second superposition 27b is frozen by scanning a laser, for example, under an inert atmosphere over the entire surface of the the lower face 24b of the ceramic plate 24.
Pour la face supérieure du module électronique de puissance 20 formée à partir de la face supérieure 24a de la plaque isolante 24, les mêmes étapes que la face inférieure sont réalisées à l'exception que le balayage de la source de puissance ne couvre pas toute la surface étant donnée que la première couche de cuivre 25a ne couvre pas toute la surface mais forme des pistes électriques sur la face supérieure de la plaque isolante 24.  For the upper face of the electronic power module 20 formed from the upper face 24a of the insulating plate 24, the same steps as the lower face are performed except that the scanning of the power source does not cover the entire surface given that the first copper layer 25a does not cover the entire surface but forms electrical tracks on the upper face of the insulating plate 24.
Plus précisément, dans une quatrième étape 124 de formation des couches de transition thermomécanique, on forme une première couche de transition thermomécanique 271 de la première superposition 27a sur la première couche de cuivre 25a en déposant un lit de poudre d'un matériau présentant un CTE de 13 ppm/°C uniquement sur les pistes formées par la première couche de cuivre 25a, puis on fige la première couche de transition thermomécanique 271 de la première superposition 27a par le balayage d'un laser par exemple, sous atmosphère inerte sur les pistes ainsi formées. More precisely, in a fourth step 124 for forming the thermomechanical transition layers, a first thermomechanical transition layer 271 of the first superposition 27a is formed on the first copper layer 25a by depositing a bed of powder. of a material having a CTE of 13 ppm / ° C only on the tracks formed by the first copper layer 25a, and then the first thermomechanical transition layer 271 of the first superposition 27a is frozen by the scanning of a laser, for example under an inert atmosphere on the tracks thus formed.
Dans une cinquième étape 125 de formation des couches de transition thermomécanique, on forme une deuxième couche de transition thermomécanique 272 de la première superposition 27a en déposant sur la première couche de transition thermomécanique 271 un lit de poudre d'un matériau présentant un CTE de 10 ppm/°C uniquement sur les pistes formées par la première couche de transition thermomécanique 271 et la première couche de cuivre 25a, puis on fige la deuxième couche de transition thermomécanique 272 de la première superposition 27a par le balayage d'un laser par exemple, sous atmosphère inerte sur les pistes ainsi formées.  In a fifth thermomechanical transition layer forming step 125, a second thermomechanical transition layer 272 of the first superposition 27a is formed by depositing on the first thermomechanical transition layer 271 a bed of powder of a material having a CTE of 10. ppm / ° C only on the tracks formed by the first thermomechanical transition layer 271 and the first copper layer 25a, then the second thermomechanical transition layer 272 of the first superposition 27a is frozen by the scanning of a laser for example, under an inert atmosphere on the tracks thus formed.
Dans une sixième étape 126 de formation des couches de transition thermomécanique, on forme une troisième couche de transition thermomécanique 273 de la première superposition 27a en déposant sur la deuxième couche de transition thermomécanique 272 un lit de poudre d'un matériau présentant un CTE de 7 ppm/°C uniquement sur les pistes formées par la deuxième couche de transition thermomécanique 272, la première couche de transition thermomécanique 271 et la première couche de cuivre 25a, puis on fige la troisième couche de transition thermomécanique 273 de la première superposition 27a par le balayage d'un laser par exemple, sous atmosphère inerte sur les pistes ainsi formées.  In a sixth thermomechanical transition layer forming step 126, a third thermomechanical transition layer 273 of the first superposition 27a is formed by depositing on the second thermomechanical transition layer 272 a bed of powder of a material having a CTE of 7. ppm / ° C only on the tracks formed by the second thermomechanical transition layer 272, the first thermomechanical transition layer 271 and the first copper layer 25a, and then the third thermomechanical transition layer 273 of the first superposition 27a is frozen by the scanning a laser for example, in an inert atmosphere on the tracks thus formed.
La dernière couche supérieure de la première superposition 27a, c'est-à-dire la troisième couche de transition thermomécanique 273, présente de préférence un CTE le plus proche possible de celui des composants semi-conducteurs 26 qui sont généralement brasés sur cette couche, c'est-à-dire l'ordre de 3 à 4 ppm/°C  The last upper layer of the first superposition 27a, that is to say the third thermomechanical transition layer 273, preferably has a CTE as close as possible to that of the semiconductor components 26 which are generally brazed on this layer, i.e., the order of 3 to 4 ppm / ° C
En cas de forte rugosité de cette dernière couche 273, une étape de polissage peut être prévue pour atteindre la rugosité nécessaire.  In case of high roughness of this last layer 273, a polishing step may be provided to achieve the necessary roughness.
Le procédé peut également comprendre, dans des variantes, des dépôts de finitions sur la dernière couche supérieure 273 classiquement utilisés en assemblage électronique de type ENIG (« Electroless Nickel Immersion gold »), ENEPIG (« Electroless Nickel Electroless Palladium Immersion Gold »), EPIG (« Electroless Palladium and Immersion Gold plating »), ISIG (« Immersion Silver and Immersion Gold plating »), etc., pour éviter l'oxydation lors du brasage des composants à semi-conducteurs de puissance 26 et avoir une compatibilité avec les technologies et les procédés d'attache de composants classiquement utilisées. The method may also comprise, in variants, finishing deposits on the last top layer 273 conventionally used in ENIG type electronic assembly. (Electroless Nickel Immersion gold), ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold), EPIG (Electroless Palladium and Immersion Gold plating), ISIG (Immersion Silver and Immersion Gold plating), etc., to avoid oxidation during brazing of power semiconductor components 26 and have compatibility with conventionally used component attachment technologies and methods.
Pour la formation des couches de transition thermomécaniques, des projections de poudre peuvent aussi être envisagées pour remplacer les lits de poudre.  For the formation of thermomechanical transition layers, powder projections can also be envisaged to replace the powder beds.
La variation de CTE des couches est assurée par la variation de la concentration des poudres ou des fibre du matériau à faible CTE (W, Mo, Invar, Kovar, diamant, SiC, fibre de carbone...) dans les matériaux à fort CTE (Cu).  The variation of CTE of the layers is ensured by the variation of the concentration of the powders or fibers of the low CTE material (W, Mo, Invar, Kovar, diamond, SiC, carbon fiber ...) in the high CTE materials (Cu).
Les matériaux des poudres utilisées pour les couches de transition thermomécanique peuvent être par exemple choisis dans la liste suivante : W50Cu50, W60Cu40, W70Cu30, W80Cu20, W90CulO, Mo50Cu50, Mo60Cu40, Mo70Cu30, Mo80Cu20, Mo85Cul5.  The powder materials used for the thermomechanical transition layers can be chosen, for example, from the following list: W 50 Cu 50, W 60 Cu 140, W 70 Cu 30, W 80 Cu 20, W 90 Cu 0.1, Mo 50 Cu 50, Mo 60 Cu 40, Mo 70 Cu 30, Mo 80 Ca 20, Mo 85 Ca 5.
La puissance de la source de chaleur doit permettre de faire fondre au moins un des matériaux du mélange pour assurer une bonne incorporation des particules dans une matrice métallique. Parmi les matériaux déjà cités, le cuivre présente la température de fusion la plus faible et il faut donc au moins une puissance et un temps permettant d'atteindre la température de fusion de Cu qui est de 1085°C.  The power of the heat source must make it possible to melt at least one of the materials of the mixture to ensure good incorporation of the particles into a metal matrix. Among the materials already mentioned, the copper has the lowest melting temperature and therefore requires at least a power and a time to reach the melting temperature of Cu which is 1085 ° C.
L'épaisseur de chaque couche de cuivre ou de chaque couche de transition thermomécanique déposée varie entre 20 μιτι et 150 pm et le CTE s'approche de celui de la céramique en s'éloignant de l'interface avec la plaque isolante 24 en céramique. Cela permet de diminuer les contraintes mécaniques subites dans la céramique de la plaque isolante 24 lors des variation de température et de distribuer les contraintes entre les différentes couches sans avoir des contraintes excessives entre deux couches métalliques successives menant à la défaillance de l'assemblage.  The thickness of each layer of copper or thermomechanical transition layer deposited varies between 20 μιτι and 150 pm and the CTE approaches that of the ceramic away from the interface with the insulating plate 24 ceramic. This makes it possible to reduce the sudden mechanical stresses in the ceramic of the insulating plate 24 during temperature variations and to distribute the stresses between the different layers without having excessive stresses between two successive metal layers leading to the failure of the assembly.
Le procédé de fabrication comprend en outre, lors de la fabrication de la face inférieure, l'impression des couches continues jusqu'à la fabrication d'un radiateur 23 avec différentes géométries complexes et efficaces pour un refroidissement sous air, comme par exemple des ailettes, des pins, des réseaux « lattices », ou autres, ou des canaux pour un refroidissement par liquide. The manufacturing method further comprises, during the manufacture of the lower face, the printing of the continuous layers until the manufacture of a radiator 23 with different complex and effective geometries for cooling in air, as for example. examples of fins, pins, networks "lattices", or other, or channels for liquid cooling.
Plus précisément, dans une étape 130 du procédé, qui peut être confondue avec la troisième étape 123 de formation des couches de transition thermomécanique dans laquelle est formée la troisième couche de transition thermomécanique 276 de la seconde superposition 27b, on forme un radiateur 23 à partir de la troisième couche de transition thermomécanique 276 de la seconde superposition pour qu'elle comprenne le radiateur 23.  More specifically, in a step 130 of the method, which can be confused with the third thermomechanical transition layer forming step 123 in which the third thermomechanical transition layer 276 of the second superposition 27b is formed, a radiator 23 is formed from of the third thermomechanical transition layer 276 of the second superposition to include the radiator 23.
Le procédé de fabrication du module électronique de puissance The manufacturing process of the electronic power module
20 permet ainsi de réduire la résistance thermique du module 20 en éliminant le matériau d'interface thermique et en permettant la fabrication d'un radiateur 23 avec des géométries complexes très difficilement réalisable par les technologies classiques. 20 thus reduces the thermal resistance of the module 20 by eliminating the thermal interface material and allowing the manufacture of a radiator 23 with complex geometries very difficult to achieve by conventional technologies.
De même, pour la face supérieure, la troisième couche de transition thermomécanique 273 de la première superposition 27a est déposée afin de réaliser les connectiques 29 et le boîtier 22 par impression 3D dans une étape 140 qui peut être confondue avec la sixième étape 126 de formation des couches de transition thermomécanique.  Similarly, for the upper face, the third thermomechanical transition layer 273 of the first superposition 27a is deposited in order to make the connectors 29 and the housing 22 by 3D printing in a step 140 which can be confused with the sixth formation step 126 thermomechanical transition layers.
Pour finaliser le module électronique de puissance 20, dans une étape 150, les composants à semi-conducteurs de puissance 26 sont ensuite reportés sur la dernière couche 273 de la première superposition 27a par une des techniques utilisés classiquement, telle que le brasage, le collage, ou le frittage par exemple, puis connectés électriquement par exemple par des fils de câblage, par brasage de cadre métallique, ou par d'autre technique d'interconnexion.  To finalize the power electronic module 20, in a step 150, the power semiconductor components 26 are then transferred to the last layer 273 of the first superposition 27a by one of the conventionally used techniques, such as brazing, bonding , or sintering for example, and then electrically connected for example by wiring son, brazing metal frame, or other interconnection technique.
Enfin, dans une étape 160, le module électronique 20 est encapsulé, c'est-à-dire rempli par un gel silicone, epoxy, ou par un liquide ou un gaz isolant dans le cas où la fermeture est hermétique et le boîtier 22 est fermé par fabrication additive à partir du même matériau que le matériau utilisé pour la troisième couche de transition thermomécanique 273 de la première superposition 27a. Autour des connectiques sortantes 29 et afin d'assurer une isolation électrique du boîtier entre les connectiques et le boitier, un joint isolant en verre, en céramique peut être réalisé. La partie constituant la fermeture du boitier peut être réalisée séparément et attachée au boitier après par brasage, frittage, ou autre technique d'assemblage. Finally, in a step 160, the electronic module 20 is encapsulated, that is to say filled with a silicone gel, epoxy, or with a liquid or an insulating gas in the case where the closure is hermetic and the housing 22 is closed by additive manufacturing from the same material as the material used for the third thermomechanical transition layer 273 of the first superposition 27a. Around the outgoing connectors 29 and to ensure electrical insulation of the housing between the connectors and the housing, an insulating glass, ceramic seal can be achieved. The part constituting the closure of the case can be made separately and attached to the case after soldering, sintering, or other assembly technique.

Claims

REVENDICATIONS
1. Procédé de fabrication d'un module électronique de puissance (20) par fabrication additive, le module électronique (20) comprenant un substrat (21) comportant une plaque électriquement isolante (24) présentant une première et une seconde faces opposées (24a, 24b), et une première couche métallique (25a) disposée directement sur la première face (24a) de la plaque isolante (24) et une seconde couche métallique (25b) disposée directement sur la seconde face (25b) de la plaque isolante (24), A method of manufacturing an electronic power module (20) by additive manufacturing, the electronic module (20) comprising a substrate (21) having an electrically insulating plate (24) having first and second opposing faces (24a, 24b), and a first metal layer (25a) disposed directly on the first face (24a) of the insulating plate (24) and a second metal layer (25b) disposed directly on the second face (25b) of the insulating plate (24b). )
au moins une des couches métalliques (25a) étant réalisée par une étape de dépôt (100) d'une couche mince de cuivre et une étape de recuit (110) de la couche métallique (25a, 25b),  at least one of the metal layers (25a) being formed by a deposition step (100) of a copper thin layer and a step of annealing (110) the metal layer (25a, 25b),
et le procédé comprenant en outre une étape (120) de formation d'au moins une couche de transition thermomécanique (271 à 273, 274 à 276) sur au moins l'une des première et seconde couches métalliques (25a, 25b), ladite au moins une couche de transition thermomécanique (271 à 273, 274 à 276) comportant un matériau présentant un coefficient de dilatation thermique inférieur à celui du métal de la couche métallique (25a, 25b).  and the method further comprising a step (120) of forming at least one thermomechanical transition layer (271 to 273, 274 to 276) on at least one of the first and second metal layers (25a, 25b), said at least one thermomechanical transition layer (271 to 273, 274 to 276) comprising a material having a coefficient of thermal expansion less than that of the metal of the metal layer (25a, 25b).
2. Procédé selon la revendication 1, dans lequel ladite au moins une couche de transition thermomécanique (271 à 273, 274 à 276) est déposée par dépôt d'un lit de poudre de matériau ou par projections de poudre de matériau, la poudre déposée étant figée par balayage d'une source de puissance calorifique sous atmosphère inerte. 2. Method according to claim 1, wherein said at least one thermomechanical transition layer (271 to 273, 274 to 276) is deposited by deposition of a bed of material powder or by spraying powder of material, the deposited powder being frozen by scanning a source of heat power under an inert atmosphere.
3. Procédé selon l'une des revendications 1 ou 2, dans lequel le coefficient de dilatation thermique des matériaux utilisées pour les couches de transition thermomécanique (271 à 273, 274 à 276) est compris entre 3 ppm/°C et 17 ppm/°C. 3. Method according to one of claims 1 or 2, wherein the coefficient of thermal expansion of the materials used for thermomechanical transition layers (271 to 273, 274 to 276) is between 3 ppm / ° C and 17 ppm / ° C.
4. Procédé selon l'une des revendications 1 à 3, dans lequel le substrat (21) comprend, sur au moins une des première et seconde faces (24a, 24b) de la plaque isolante (24), un empilement (28a, 28b) d'une couche métallique (25a, 25b) et d'une pluralité de couches de transition thermomécanique (271 à 273, 274 à 276), ledit au moins un empilement (28a, 28b) présentant un gradient de coefficient de dilatation thermique. 4. Method according to one of claims 1 to 3, wherein the substrate (21) comprises, on at least one of the first and second faces (24a, 24b) of the insulating plate (24), a stack (28a, 28b). ) a metal layer (25a, 25b) and a plurality of transition layers thermomechanical (271-273, 274-276), said at least one stack (28a, 28b) having a coefficient of thermal expansion gradient.
5. Procédé selon l'une des revendications 1 à 4, comprenant en outre une étape (130) de formation d'un radiateur par fabrication additive à partir de la dernière couche de transition thermomécanique (276) de la seconde face du substrat (21). 5. Method according to one of claims 1 to 4, further comprising a step (130) of forming a radiator by additive manufacturing from the last thermomechanical transition layer (276) of the second face of the substrate (21). ).
6. Procédé selon l'une des revendications 1 à 5, comprenant en outre, une étape (140) de réalisation d'un boîtier (22) à apte à protéger les composants électroniques (26) destinés à être montés sur la première face du substrat (21) et de réalisation des connectiques (29) aptes à raccorder électriquement le module électronique (20) à des éléments électriques externes, le boîtier (22) et les connectiques (29) étant réalisés par fabrication additive à partir de la dernière couche de transition thermomécanique (273) de la première face du substrat (21). 6. Method according to one of claims 1 to 5, further comprising a step (140) for producing a housing (22) adapted to protect the electronic components (26) intended to be mounted on the first face of the substrate (21) and making connectors (29) adapted to electrically connect the electronic module (20) to external electrical elements, the housing (22) and connectors (29) being made by additive manufacturing from the last layer thermomechanical transition (273) of the first face of the substrate (21).
7. Substrat (21) pour module électronique de puissance (20), le substrat (21) comportant une plaque électriquement isolante (24) présentant une première et une seconde faces opposées (24a, 24b), et une première couche métallique (25a) disposée directement sur la première face (24a) de la plaque isolante (24) et une seconde couche métallique (25b) disposée directement sur la seconde face (25b) de la plaque isolante (24), 7. Substrate (21) for power electronics module (20), the substrate (21) having an electrically insulating plate (24) having first and second opposing faces (24a, 24b), and a first metal layer (25a) arranged directly on the first face (24a) of the insulating plate (24) and a second metal layer (25b) arranged directly on the second face (25b) of the insulating plate (24),
caractérisé en ce qu'il comprend, sur au moins l'une des première et seconde couches métalliques (25a, 25b), au moins une couche de transition thermomécanique (271 à 273, 274 à 276) comportant un matériau présentant un coefficient de dilatation thermique inférieur à celui du métal de la couche métallique (25a, 25b), et au moins un empilement (28a, 28b) d'une couche métallique (25a, 25b) et d'une pluralité de couches de transition thermomécanique (271 à 273, 274 à 276), ledit au moins un empilement (28a, 28b) présentant un gradient de coefficient de dilatation thermique.  characterized in that it comprises, on at least one of the first and second metal layers (25a, 25b), at least one thermomechanical transition layer (271 to 273, 274 to 276) comprising a material having a coefficient of expansion lower than the metal of the metal layer (25a, 25b), and at least one stack (28a, 28b) of a metal layer (25a, 25b) and a plurality of thermomechanical transition layers (271-273) , 274-276), said at least one stack (28a, 28b) having a coefficient of thermal expansion gradient.
8. Substrat (21) selon la revendication 7, dans lequel le coefficient de dilatation thermique des matériaux utilisés pour les couches de transition thermomécanique (271 à 273, 274 à 276) est compris entre 3 ppm/°C et 17 ppm/°C. 8. Substrate (21) according to claim 7, wherein the coefficient of thermal expansion of the materials used for the layers Thermomechanical transition temperature (271 to 273, 274 to 276) is between 3 ppm / ° C and 17 ppm / ° C.
9. Module électronique de puissance (20) comprenant un substrat présentant une première face et une seconde face opposée à la première face, et un radiateur (23) monté sur la seconde face du substrat, la première face du substrat étant destinée à recevoir des composants électroniques (26), An electronic power module (20) comprising a substrate having a first face and a second face opposite the first face, and a radiator (23) mounted on the second face of the substrate, the first face of the substrate being adapted to receive electronic components (26),
caractérisé en ce que le substrat est un substrat (21) selon l'une des revendications 7 ou 8.  characterized in that the substrate is a substrate (21) according to one of claims 7 or 8.
10. Module électronique de puissance (20) selon la revendication 9, dans lequel le radiateur (23) comprend la dernière couche de transition thermomécanique (276) de la seconde face du substrat (21), le radiateur (23) étant réalisé par fabrication additive à partir de ladite dernière couche de transition thermomécanique (276) de la seconde face du substrat (21). An electronic power module (20) according to claim 9, wherein the radiator (23) comprises the last thermomechanical transition layer (276) of the second face of the substrate (21), the radiator (23) being made by manufacturing additive from said last thermomechanical transition layer (276) of the second face of the substrate (21).
11. Module électronique de puissance (20) selon l'une des revendications 9 ou 10, comprenant en outre un boîtier (22) apte à protéger les composants électroniques (26) montés sur la première face du substrat (21), le boîtier (22) étant réalisé par fabrication additive à partir de la dernière couche de transition thermomécanique (273) de la première face du substrat (21). 11. electronic power module (20) according to one of claims 9 or 10, further comprising a housing (22) adapted to protect the electronic components (26) mounted on the first face of the substrate (21), the housing ( 22) being made by additive manufacturing from the last thermomechanical transition layer (273) of the first face of the substrate (21).
PCT/FR2018/050024 2016-12-05 2018-01-05 Process for manufacturing a power electronic module by additive manufacturing, associated module and substrate WO2018134495A1 (en)

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JP2019559403A JP7034177B2 (en) 2017-01-18 2018-01-05 How to make electronic power modules by additive manufacturing and related boards and modules
CN201880006984.0A CN110178215B (en) 2017-01-18 2018-01-05 Method for manufacturing electronic power modules by additive manufacturing and related substrates and modules
RU2019125714A RU2750688C2 (en) 2017-01-18 2018-01-05 Method for manufacture of an electronic power module by means of additive technology and corresponding substrate and module
US16/478,326 US11147851B2 (en) 2016-12-05 2018-01-05 Method of fabricating an electronic power module by additive manufacturing, and associated substrate and module
EP18700943.6A EP3571716B1 (en) 2017-01-18 2018-01-05 Process for manufacturing a power electronic module by additive manufacturing, associated module and substrate
CA3049478A CA3049478A1 (en) 2017-01-18 2018-01-05 Process for manufacturing a power electronic module by additive manufacturing, associated module and substrate
BR112019014637-7A BR112019014637B1 (en) 2017-01-18 2018-01-05 METHOD FOR MANUFACTURING A POWER ELECTRONIC MODULE, SUBSTRATE FOR A POWER ELECTRONIC MODULE, AND POWER ELECTRONIC MODULE
US17/475,989 US11594475B2 (en) 2017-01-18 2021-09-15 Method of fabricating an electronic power module by additive manufacturing, and associated substrate and module

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FR1750381A FR3061989B1 (en) 2017-01-18 2017-01-18 METHOD FOR MANUFACTURING AN ELECTRONIC POWER MODULE BY ADDITIVE MANUFACTURE, SUBSTRATE AND RELATED MODULE
FR1750381 2017-01-18

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