+

WO2018131532A1 - Élément de conversion thermoélectrique, et son procédé de fabrication - Google Patents

Élément de conversion thermoélectrique, et son procédé de fabrication Download PDF

Info

Publication number
WO2018131532A1
WO2018131532A1 PCT/JP2018/000046 JP2018000046W WO2018131532A1 WO 2018131532 A1 WO2018131532 A1 WO 2018131532A1 JP 2018000046 W JP2018000046 W JP 2018000046W WO 2018131532 A1 WO2018131532 A1 WO 2018131532A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric conversion
conversion layer
conversion element
iron
fese
Prior art date
Application number
PCT/JP2018/000046
Other languages
English (en)
Japanese (ja)
Inventor
清水　直
義宏 岩佐
Original Assignee
国立研究開発法人理化学研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立研究開発法人理化学研究所 filed Critical 国立研究開発法人理化学研究所
Publication of WO2018131532A1 publication Critical patent/WO2018131532A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00—Compounds of iron
    • C01G49/12—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Definitions

  • the present invention relates to a thermoelectric conversion element and a manufacturing method thereof.
  • this invention relates to the thermoelectric conversion element excellent in the efficiency which produces
  • thermoelectric power generation using a thermoelectric conversion element is expected as a promising candidate because of the advantage that local heat can be used by a small and simple device.
  • the physical phenomenon that is the principle is also called a thermoelectric conversion phenomenon, and has long been known as the Seebeck effect, Peltier effect, and Thomson effect.
  • Non-Patent Documents 1 and 2 This suggests that the reduced carrier conduction, which is easy to move only in the two-dimensional or one-dimensional direction, is more advantageous for the thermoelectric effect in the semiconductor than the three-dimensional carrier conduction.
  • the present inventor also has different thermoelectric effects in three-dimensional conduction and two-dimensional conduction in the electronic conduction of zinc oxide (ZnO), specifically, the efficiency of generating thermoelectromotive force by two-dimensional conduction. (Non-patent Document 3).
  • a value (ZT) called a dimensionless figure of merit is used as a standard for practical use of thermoelectric conversion materials.
  • the dimensionless figure of merit ZT is the product of the figure of merit Z of the thermoelectric conversion material and the absolute temperature T (unit: Kelvin).
  • S the Seebeck coefficient
  • ⁇ the electrical conductivity
  • a practical thermoelectric conversion performance can be expected for a substance having a dimensionless figure of merit ZT of approximately 1 or a value exceeding it.
  • the factor S 2 ⁇ which is a part of the figure of merit Z, is also called a power factor and is one of the indices of the thermoelectric conversion performance of the material.
  • thermoelectric conversion materials Although it has been suggested that lowering the conduction carrier is advantageous for improving the performance of thermoelectric conversion materials, specific methodologies and guidelines for increasing the thermoelectric effect have not necessarily been fully clarified.
  • the present invention clarifies a methodology for realizing a larger thermoelectric effect, and clarifies a guideline for selecting a material capable of realizing high-performance thermoelectric conversion by accumulating knowledge about the thermoelectric conversion effect thereby. Therefore, it contributes to the improvement of the performance of any device that uses thermoelectric conversion as its operating principle.
  • thermoelectric conversion material has succeeded in identifying the properties that affect the performance of the thermoelectric conversion material, and has completed the thermoelectric conversion element based on a new methodology for designing the thermoelectric conversion material.
  • thermoelectric conversion layer having a certain thickness
  • the material forming the thermoelectric conversion layer has a conductive carrier distribution that extends in a two-dimensional direction along the thermoelectric conversion layer
  • a thermoelectric conversion layer in which the effective mass of the conduction carrier is larger than that of free electrons in the direction along the thermoelectric conversion layer, and the electric conductivity of the conduction carrier is larger than the value of the Bi 2 Te 3 material.
  • a thermoelectric conversion element is provided.
  • the material of the thermoelectric conversion layer is represented by FeS 1-xy Se x Te y (where x and y are both 0 or more and 1 or less and x + y is 0 or more and 1 or less).
  • Iron chalcogenide is a compound of iron (Fe) and at least one element selected from the chalcogen element group consisting of sulfur (S), selenium (Se), or tellurium (Te). It is.
  • thermoelectric conversion element a step of preparing a substrate of SrTiO 3 and a chalcogen element group consisting of sulfur (S), selenium (Se), or tellurium (Te) in contact with the surface of the substrate are selected.
  • the manufacturing method of the thermoelectric conversion element including the process to perform is provided.
  • the terminology used in the field to which the present invention belongs and the measuring method thereof are used.
  • the particle responsible for electrical conduction is an electron
  • the value of the effective mass of the conduction carrier can be obtained from cyclotron resonance or a determined band structure at a typical use temperature.
  • generates a thermoelectromotive force by this invention, and its manufacturing method are provided.
  • thermoelectric conversion element 1 is a schematic diagram showing a crystal structure of iron chalcogenide containing FeSe having a crystal structure called a PbO structure, which is employed in an embodiment of the present invention. It is a flowchart which shows the manufacturing method of the thermoelectric conversion element in embodiment of this invention. In the Example of this invention, it is a schematic diagram which shows a mode that the performance of the thermoelectric effect with respect to a film thickness is confirmed, and the structure for adjusting the film thickness of a FeSe thin film by electrochemical etching is shown.
  • FIG. 6 is a schematic diagram showing a specific setup of measurement that obtained the result shown in FIG. 5 in the example of the present invention.
  • the graph (FIG. 7A) showing the film thickness dependence of the power factor S 2 ⁇ determined from the film thickness dependence of the thermoelectromotive force S and the electrical conductivity ⁇ of the FeSe thin film obtained in the example of the present invention, and the FeSe thin film it is a graph of the power factor S 2 sigma of comparison with values of conventional thermoelectric conversion material (FIG. 7B).
  • thermoelectric conversion element an embodiment of the thermoelectric conversion element
  • FIG. 1 shows a configuration of a thermoelectric conversion element in the present embodiment.
  • the thermoelectric conversion element 100 includes a thermoelectric conversion layer 10 formed on the surface of the substrate 2 such as SrTiO 3 (abbreviated as STO) as an example.
  • An exemplary material of the thermoelectric conversion layer 10 is preferably an iron chalcogenide represented by, for example, FeS 1-xy Se x Te y (where x and y are both 0 or more and 1 or less and x + y is 0 or more and 1 or less). (Details will be described later).
  • Each of the pair of electrodes 22 and 24 is attached to each of the first portion 12 and the second portion 14 that are separated from each other in the spread of the thermoelectric conversion layer 10.
  • thermoelectric conversion element 100 the first portion 12 and the second portion 14 that are separated from each other in the thermoelectric conversion layer 10 are set to different temperatures in the stage of the operation of extracting the thermoelectromotive force through the pair of electrodes 22 and 24.
  • heat is transmitted between the heat source 32 and the heat sink 34 via the substrate 2, for example.
  • the specific arrangement of the heat source 32 and the heat sink 34 with respect to the thermoelectric conversion layer 10 is appropriately set according to the situation of implementation.
  • the c-axis of the crystal can be more preferably oriented in the direction of the thickness d.
  • Such crystal orientation can be realized by using the crystal of the substrate 2 as a template whose plane orientation is appropriately set for crystal growth of the thermoelectric conversion layer 10.
  • STO is used for the substrate 2
  • such orientation can be realized by setting the STO of the substrate 2 to have a (001) plane orientation. Note that the substrate 2 is not necessarily required for the operation of the thermoelectric conversion element 100.
  • the dimensionless figure of merit ZT is used to evaluate the efficiency of generating the thermoelectromotive force in the thermoelectric conversion element 100 having the above-described configuration.
  • Z is a figure of merit and T is an absolute temperature (unit: Kelvin).
  • the dimensionless figure of merit ZT is desirably a large value, and a practical thermoelectric effect can be expected for a substance having a value of approximately 1 or more.
  • a bismuth tellurium (Bi 2 Te 3 ) -based material the value is about 0.8 at a room temperature of 300K.
  • thermoelectric conversion layer 10 Furthermore, based on the analysis of the free electron model using the density of states of electrons and the distribution function, the effect of the dimensionality of the spatial extent of conduction carriers in materials such as semiconductors on the Seebeck effect has already been elucidated (non-patented References 1, 2).
  • One of the findings is that lower-order carrier conduction that is easier to move in two-dimensional and one-dimensional directions is more advantageous for the thermoelectric effect than three-dimensional carrier conduction.
  • the conduction carrier distribution spreading in a two-dimensional direction means at least one of the following: (1) The relative electrical conductivity by direction is high in the plane of the two-dimensional plane and low in the direction perpendicular to the plane; (2) When the spatial expansion of the conduction carriers is viewed relative to each direction, the conduction carriers are spread within the plane of the two-dimensional plane and have no overlap, and do not have an overlap spread in the direction perpendicular to the plane.
  • One of these conditions is satisfied in the electron distribution (two-dimensional electron gas) in which the spatial spread is limited to one direction perpendicular to the plane and spreads in the other two directions (in-plane).
  • a conductive carrier that satisfies any of the above conditions is intended, and a two-dimensional electron gas is taken as an example thereof, and a three-dimensional electron gas is taken as an example of a conductive carrier having a three-dimensional distribution in order to contrast it. Also mention.
  • ZT ⁇ m * 3/2 ( ⁇ / ⁇ ) T (About 3D electron gas) ⁇ m * ( ⁇ / ⁇ ) T (About 2D electron gas) It is shown that the relationship is established.
  • m * is the effective mass of conduction carriers (electrons)
  • ⁇ is the mobility (m 2 / V / s)
  • ⁇ is a symbol indicating that both sides are in a proportional relationship.
  • the bismuth tellurium (Bi 2 Te 3 ) -based material which is a known thermoelectric conversion material having a value of about 0.8 as ZT, is a case of a three-dimensional electron gas.
  • the desirable properties for the efficiency of thermoelectric conversion are, firstly, that the material forming the thermoelectric conversion layer has a conduction carrier distribution that extends in a two-dimensional direction along the thermoelectric conversion layer, Secondly, the effective mass of the conductive carrier is large, and thirdly, the mobility of the conductive carrier is large and the electric conductivity is large.
  • the effective mass of the conductive carrier is preferably larger than the mass of free electrons (static mass).
  • the electric conductivity of the conductive carrier is the electric conductivity of Bi 2 Te 3 material (for example, 5000 S / cm, VA Kulbachinskii et al., “Thermoelectric properties of Bi 2 Te 3 , Sb 2 Te 3 and Bi 2 Se 3. larger than single crystals with magnetic impurities, "J. Solid State Chem. 193, 47 (2012).).
  • the chalcogen element is sulfur, selenium, or tellurium
  • they are sequentially called iron (II) sulfide (II), iron selenide (or iron selenium) FeSe, and iron telluride (or iron tellurium) FeTe.
  • iron selenium FeSe has attracted attention due to several unique properties.
  • 9K approximately at bulk, in the thin film is a superconductor having a superconducting transition temperature T C in excess of 50K.
  • the superconducting transition temperature T C is added or pressure, also increased by intercalation of other atoms (K, Rb, Cs, etc.), ammonia molecule to iron atoms interlayer.
  • K, Rb, Cs, etc. other atoms
  • ammonia molecule to iron atoms interlayer Although it is an iron compound, it does not show magnetic order. It has a nematic order associated with a structural phase transition near 90K.
  • FIG. 2 is a schematic diagram showing a crystal structure of iron chalcogenide containing FeSe having a crystal structure called a PbO structure.
  • the iron Fe atoms are spread and arranged in a plane perpendicular to the c-axis, and the iron Fe atoms in different planes are arranged at positions overlapping in the c-axis direction.
  • Selenium Se is arranged at the position of the chalcogen element Ch in FIG. 2, and is arranged at a position deviating from the plane of the iron atom by shifting in the c-axis direction in the middle of each iron atom.
  • the effective mass m * has about three times the value of almost free electron mass (electron rest mass) m e (Non-Patent Document 5).
  • the crystal structure and basic physical and chemical properties of FeSe are represented by the general formula FeS 1-xy Se x Te y (where x and y are both 0 or more and 1 or less, and x + y is 0 or more and 1 or less). It is common to iron chalcogenides having a composition. For this reason, it can be said that the iron chalcogenide in which the chalcogen element is selected from sulfur (S), selenium (Se), or tellurium (Te) is suitable for the method for the thermoelectric conversion element proposed by the present inventor.
  • FIG. 3 is a flowchart showing a manufacturing method of the thermoelectric conversion element 100 of the present embodiment.
  • the thermoelectric conversion element 100 is roughly divided into three steps.
  • the first is a substrate preparation step (S02).
  • a substrate suitable for crystal growth such as SrTiO 3 prepared so as to have an appropriate plane orientation such as the (001) plane orientation is prepared and mounted on an appropriate apparatus such as a film forming apparatus.
  • a step of cleaning the surface can be added if necessary.
  • the second is a thermoelectric conversion layer forming step (S04).
  • a thermoelectric conversion layer is formed on the surface of the prepared substrate by any film forming method.
  • the MBE (Molecular Beam Epitaxy) method and the PLD (pulsed laser deposition) method can be employed as the film forming method.
  • thermoelectric conversion layer to be formed is an iron chalcogenide crystal film in this embodiment, and at least one element selected from a chalcogen element group consisting of sulfur (S), selenium (Se), or tellurium (Te). It is a compound with iron, and a typical FeSe thin film.
  • an electrode forming step is performed in which each of the paired electrodes is formed on each of the first portion and the second portion that are separated from each other in the thermoelectric conversion layer (S06). This step is a step of forming an appropriate metal film in a necessary range pattern that realizes ohmic connection with the thermoelectric conversion layer and is easily connected to external wiring.
  • an optional step that is useful in implementation as an optional step can be added at an arbitrary timing.
  • the step of removing the substrate when the substrate is unnecessary, the step of collecting and accumulating a large number of formed thermoelectric conversion layers, the step of adjusting the thickness of the thermoelectric conversion layer afterwards, and shaping the outer shape of the thermoelectric conversion layer The process of performing etc. can be implemented as an option.
  • thermoelectric conversion element of the present embodiment examples for confirming the performance of the thermoelectric conversion element of the present embodiment will be described.
  • the materials, amounts used, ratios, processing contents, processing procedures, directions of elements or members, specific arrangements, and the like shown in the following examples can be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention is not limited to the following specific examples.
  • thermoelectric conversion element of the present embodiment can be implemented by forming a FeSe thin film having an appropriate thickness on one surface of an appropriate substrate by a general film forming method.
  • (001) -oriented SrTiO 3 is used as an example of the substrate
  • a known PLD method is used as an example of the film forming method
  • the film thickness of the FeSe thin film is first set to a thickness of about 20 nm.
  • a FeSe thin film sample for the thermoelectric conversion element 100 was prepared by the manufacturing method shown in FIG. The produced FeSe thin film sample can be used as it is as the thermoelectric conversion element 100, but here, the thickness of the FeSe thin film was sequentially changed so as to decrease later, and the relationship between the thickness and the characteristics was investigated.
  • the thickness of the FeSe thin film as the thermoelectric conversion layer 10 was adjusted as follows. First, an ionic liquid is sandwiched between a sample FeSe thin film and a platinum electrode, and a voltage of 5 V is applied while maintaining a temperature near 245K. This schematic diagram is shown in FIG. At the temperature, atoms on the outermost surface of the thermoelectric conversion layer 10 which is an FeSe thin film disposed in contact with the substrate 2 are dissolved in the ionic liquid and subjected to electrochemical etching. Thereby, the film thickness of the FeSe thin film can be reduced.
  • the film thickness is sequentially reduced with high controllability from the as-deposited 20 nm to the single layer (0.6 nm) which is the minimum film thickness, and the thermoelectric effect is measured at each film thickness in the middle.
  • DEME-TFSI N-diethyl-N- (2-methoxyethyl) -N-methylammoniumbis- (trifluoromethylsulfonyl) -imide
  • thermoelectric effect Measurement Thermoelectric Effect was measured while the electrochemical etching was performed and the film thickness of the FeSe thin film was gradually reduced. The measurement was performed at a temperature (200K) at which etching stops.
  • FIG. 5 is a graph showing the results. As shown in FIG. 5, a phenomenon was observed in which the Seebeck effect increased as the film thickness decreased.
  • FIG. 6 is a schematic diagram showing a specific setup for this measurement. In order to measure the thermoelectric effect characteristics by applying the structure of the thermoelectric conversion element 100 shown in FIG. 1, this setup uses a platinum electrode via an ionic liquid on the side opposite to the substrate 2 of the thermoelectric conversion layer 10.
  • the electrodes 22 and 24 are added so as to face each other, and the electrodes 22 and 24 are respectively configured as a source electrode and a drain electrode, and the added platinum electrode is used as a gate electrode to have an electrode configuration similar to an FET (field effect transistor).
  • a temperature difference is generated at both ends of the sample using the heater of FIG.
  • the resulting temperature difference ⁇ T was measured using a thermocouple.
  • thermoelectromotive force Using a device structure as shown in FIG. 6, it is possible to measure not only the thermoelectromotive force but also the electrical conductivity at the same time. Specifically, a current was passed by application of a voltage V DS between the electrodes spaced apart in FeSe film. Then, if the voltage drop of the sample is measured using a thermocouple, the electrical resistance can be obtained by Ohm's law. The electrical conductivity can be obtained from this value and the film thickness. By measuring the electrical conductivity while changing the film thickness by etching, the film thickness dependence of the electrical conductivity was measured.
  • FIG. 7B compares the power factor S 2 ⁇ of this FeSe thin film with the value obtained with the conventional bulk material of the thermoelectric conversion material. As described above, it was confirmed that the FeSe thin film realizes a power factor larger than that of the conventionally known substances.
  • thermoelectric conversion layer 10 PbO-structured iron selenium (FeSe) is formed by forming the thermoelectric conversion layer 10 with the c-axis oriented in the thickness direction with respect to the (001) -oriented STO substrate.
  • This is an example suitable for the use of the thermoelectric conversion element 100 in which a temperature difference is generated at different positions in the surface of the thermoelectric conversion layer 10 in order to form a two-dimensional electron gas that spreads in the plane including the atoms.
  • the preferable thermoelectric conversion layer 10 has a thickness of 12 nm or less, more preferably 9 nm or less.
  • the PbO structure iron selenium (FeSe) has a thickness of 12 nm or less, a power factor value larger than that of NaCoO 2 showing a large power factor value among conventional thermoelectric conversion materials is realized, and when the thickness is 9 nm or less, NaCoO 2 This is because a significantly large power factor value is realized.
  • thermoelectric conversion layer 10 high performance can be expected by any means for promoting the reduction in the order of conduction carriers (electrons) in the thermoelectric conversion layer 10.
  • any means capable of suppressing the three-dimensional expansion and helping the two-dimensional property to appear or avoiding the weakening of the two-dimensional property can be employed.
  • techniques such as intercalation in which atoms that are neither iron nor chalcogen elements intervene in correlation, selective carrier doping on the surface of FeSe, particularly delta doping that realizes a two-dimensional carrier distribution, and the like are high performance of the thermoelectric conversion layer 10. It is useful for
  • thermoelectric conversion element based on the methodology proposed in the present embodiment and the selection of a material that embodies the methodology, an innovative thermoelectric conversion element can be realized.
  • thermoelectric conversion element of the present invention can be used for any device that uses thermoelectromotive force.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Afin de fournir un élément de conversion thermoélectrique qui génère une force thermoélectromotrice avec une efficacité élevée, un mode de réalisation de la présente invention concerne un élément de conversion thermoélectrique 100 ayant une couche de conversion thermoélectrique 10, dans laquelle une distribution de porteurs de charge s'étend dans des directions le long de deux dimensions, la masse efficace des porteurs de charge est supérieure à celle des électrons libres, et la conductivité électrique due aux porteurs de charge est supérieure à celle d'un matériau à base de Bi2Te3. De préférence, la couche de conversion thermoélectrique 10 est constituée de chalcogénure de fer représenté par FeS1-x-ySexTey (où, x et y tous les deux sont de 0 à 1, et x+y est de 0 à 1). Un mode de réalisation de la présente invention concerne également un procédé de fabrication du dispositif de conversion thermoélectrique 100.
PCT/JP2018/000046 2017-01-11 2018-01-04 Élément de conversion thermoélectrique, et son procédé de fabrication WO2018131532A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017002727A JP6785402B2 (ja) 2017-01-11 2017-01-11 熱電変換素子およびその製造方法
JP2017-002727 2017-01-11

Publications (1)

Publication Number Publication Date
WO2018131532A1 true WO2018131532A1 (fr) 2018-07-19

Family

ID=62840205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/000046 WO2018131532A1 (fr) 2017-01-11 2018-01-04 Élément de conversion thermoélectrique, et son procédé de fabrication

Country Status (2)

Country Link
JP (1) JP6785402B2 (fr)
WO (1) WO2018131532A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7182177B2 (ja) * 2019-05-23 2022-12-02 日本電信電話株式会社 薄膜形成方法
JP7336789B2 (ja) * 2020-07-03 2023-09-01 日本電信電話株式会社 電気二重層トランジスタ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168179A (ja) * 1997-08-26 1999-03-09 Nhk Spring Co Ltd 熱発電出力の直接取出可能な熱発電素子およびその製造方法
JP2002280619A (ja) * 2001-03-19 2002-09-27 Hokushin Ind Inc 熱電変換材料及び熱電変換素子
JP2003179272A (ja) * 2001-12-13 2003-06-27 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその使用方法
JP2003332637A (ja) * 2002-05-16 2003-11-21 Komatsu Ltd 熱電材料及びそれを用いた熱電モジュール
JP2005079565A (ja) * 2003-09-04 2005-03-24 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその製造方法
JP2013157362A (ja) * 2012-01-26 2013-08-15 Toyota Motor Corp 熱電半導体
JP2013219218A (ja) * 2012-04-10 2013-10-24 Hitachi Ltd 熱電変換材料及び熱電変換素子並びに熱電変換モジュール

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168179A (ja) * 1997-08-26 1999-03-09 Nhk Spring Co Ltd 熱発電出力の直接取出可能な熱発電素子およびその製造方法
JP2002280619A (ja) * 2001-03-19 2002-09-27 Hokushin Ind Inc 熱電変換材料及び熱電変換素子
JP2003179272A (ja) * 2001-12-13 2003-06-27 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその使用方法
JP2003332637A (ja) * 2002-05-16 2003-11-21 Komatsu Ltd 熱電材料及びそれを用いた熱電モジュール
JP2005079565A (ja) * 2003-09-04 2005-03-24 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその製造方法
JP2013157362A (ja) * 2012-01-26 2013-08-15 Toyota Motor Corp 熱電半導体
JP2013219218A (ja) * 2012-04-10 2013-10-24 Hitachi Ltd 熱電変換材料及び熱電変換素子並びに熱電変換モジュール

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
OHTAKI M., ET AL.: "Microstructures and Thermoelectric Properties of NaCo204 Prepared by Double-step Sintering", JOURNAL OF THE JAPAN SOCIETY OF POWDER AND POWDER METALLURGY, vol. 47, no. 11, November 2000 (2000-11-01), pages 1159 - 1164 *
ZHITINSKAYA, M. K. ET AL.: "Influence of Impurities on the Thermoelectric Properties of Layered Anisotropic PbBi4Te7 Compound: Experiment and Calculations", SEMICONDUCTORS, vol. 44, no. 6, 27 June 2010 (2010-06-27), pages 729 - 733, XP019833674 *

Also Published As

Publication number Publication date
JP6785402B2 (ja) 2020-11-18
JP2018113330A (ja) 2018-07-19

Similar Documents

Publication Publication Date Title
Pan et al. Ultrahigh transverse thermoelectric power factor in flexible Weyl semimetal WTe2
Chen et al. Thermoelectric materials and devices
Ovsyannikov et al. High-pressure routes in the thermoelectricity or how one can improve a performance of thermoelectrics
Xu et al. Enhanced thermoelectric performance and anomalous Seebeck effects in topological insulators
Kangsabanik et al. Bismuth based half-Heusler alloys with giant thermoelectric figures of merit
Zeier et al. Band convergence in the non-cubic chalcopyrite compounds Cu 2 MGeSe 4
Tan et al. Oriented growth of A2Te3 (A= Sb, Bi) films and their devices with enhanced thermoelectric performance
Lv et al. Optimized thermoelectric performance of Bi 2 Te 3 nanowires
US20150155464A1 (en) Thermoelectric Structures and Devices Based on Topological Insulators
Abdel-Motaleb et al. Thermoelectric devices: principles and future trends
WO2003096438A2 (fr) Materiaux et dispositifs thermoelectriques a heterostructure de points quantiques et auto-assembles
Wu et al. Bilayer excitons in two-dimensional nanostructures for greatly enhanced thermoelectric efficiency
Syafiq et al. Facile and low-cost fabrication of Cu/Zn/Sn-based ternary and quaternary chalcogenides thermoelectric generators
JPH11317548A (ja) 熱電変換材料及びその製造方法
Akhanda et al. Thermomagnetic properties of Bi 2 Te 3 single crystal in the temperature range from 55 K to 380 K
Xu et al. Thermoelectric performance of monolayer Bi2Te2Se of ultra low lattice thermal conductivity
Dashevsky et al. Investigating the performance of bismuth-antimony telluride
TWI478405B (zh) 熱電薄膜結構
Lee et al. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film
Bugalia et al. Strategies to enhance the performance of thermoelectric materials: a review
Güneş et al. Nanostructured Composites of Bi1–x Sb x Nanoparticles and Carbon Nanotubes and the Characterization of Their Thermoelectric Properties
KR101840202B1 (ko) 초격자 열전소재 및 이를 이용한 열전소자
WO2018131532A1 (fr) Élément de conversion thermoélectrique, et son procédé de fabrication
US20140373891A1 (en) Thermoelectric structure, and thermoelectric device and thermoelectric apparatus including the same
CN100570916C (zh) 热电变换材料、使用该热电变换材料的热电变换元件以及具有该元件的电子设备和冷却装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18739427

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18739427

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载