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WO2018131170A1 - Élément résistant à la contrainte, capteur de détection de quantité mécanique et microphone - Google Patents

Élément résistant à la contrainte, capteur de détection de quantité mécanique et microphone Download PDF

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Publication number
WO2018131170A1
WO2018131170A1 PCT/JP2017/001285 JP2017001285W WO2018131170A1 WO 2018131170 A1 WO2018131170 A1 WO 2018131170A1 JP 2017001285 W JP2017001285 W JP 2017001285W WO 2018131170 A1 WO2018131170 A1 WO 2018131170A1
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor
strain
resistance element
piezoelectric body
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PCT/JP2017/001285
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English (en)
Japanese (ja)
Inventor
雅信 野村
義治 芳井
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株式会社村田製作所
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Priority to PCT/JP2017/001285 priority Critical patent/WO2018131170A1/fr
Publication of WO2018131170A1 publication Critical patent/WO2018131170A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors

Definitions

  • the present invention relates to a strain resistance element, and more particularly to a strain resistance element with high detection accuracy.
  • the present invention also relates to a mechanical quantity detection sensor. More specifically, the present invention relates to a mechanical quantity detection sensor such as a pressure sensor, a strain gauge, an acceleration sensor, and an angular velocity sensor having high detection accuracy using the strain resistance element of the present invention.
  • the present invention also relates to a microphone, and more particularly to a microphone using the strain resistance element of the present invention and having high detection accuracy.
  • a strain resistance element using a piezoelectric body and a pressure sensor (a kind of mechanical quantity detection sensor) using the strain resistance element are disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 59-124181) and Patent Document 2 (Japanese Patent Laid-Open No. 2000-124181). 2005-249644).
  • FIG. 3 shows a pressure sensor 1100 disclosed in Patent Document 1. However, FIG. 3 is a cross-sectional view of the pressure sensor 1100.
  • the pressure sensor 1100 includes a first insulator (substrate) 101.
  • a semiconductor (semiconductor layer) 102 is formed on the first insulator 101.
  • a first electrode (electrode) 103 and a second electrode (electrode) 104 are formed on the semiconductor 102 so as to be separated from each other.
  • a second insulator (insulating layer) 105 is formed on the semiconductor 102 between the first electrode 103 and the second electrode 104.
  • a third electrode (electrode) 106 is formed on the second insulator 105.
  • a TFT Thin Film Transistor
  • the semiconductor 102 with the first electrode 103 as a source electrode, the second electrode 104 as a drain electrode, and the third electrode 106 as a gate electrode.
  • a piezoelectric body (piezoelectric thin film) 107 is formed under the third electrode 106 in another region of the first insulator 101. Further, a fourth electrode (electrode) 108 is formed under the piezoelectric body 107.
  • the pressure sensor 1100 changes the voltage value of the third electrode 106 by applying a strain due to pressure to the piezoelectric body 107. Then, as the voltage value of the third electrode 106 changes, the resistance value between the first electrode 103 and the second electrode 104 changes.
  • the pressure sensor 1100 detects the magnitude of the pressure (strain) applied to the piezoelectric body 107 from the amount of change in resistance value between the first electrode 103 and the second electrode 104.
  • FIG. 4 shows a pressure sensor (pressure sensor device) 1200 disclosed in Patent Document 2. However, FIG. 4 is a cross-sectional view of the pressure sensor 1200.
  • the pressure sensor 1200 includes a first insulator (flexible substrate) 201.
  • a semiconductor (semiconductor layer) 202 is formed on the first insulator 201.
  • a first electrode (source) 203 and a second electrode (drain) 204 are formed on the semiconductor 202 so as to be separated from each other.
  • a second insulator (insulating layer) 205 is formed on the semiconductor 202 and between the first electrode 203 and the second electrode 204.
  • a third electrode (gate) 206 is formed on the second insulator 205.
  • the semiconductor 202, the second insulator 205, the first electrode 203, the second electrode 204, and the third electrode 206 constitute a transistor (organic FET).
  • the pressure sensor 1200 has a piezoelectric body (piezoelectric polymer layer) 207 formed on the third electrode 206.
  • a protective layer 208 is formed on the piezoelectric body 207.
  • the pressure sensor 1200 also detects the magnitude of the pressure (strain) applied to the piezoelectric body 207 from the amount of change in resistance value between the first electrode 203 and the second electrode 204.
  • the pressure is applied to the piezoelectric body 107 and the voltage value of the third electrode 106 changes, whereby the semiconductor (semiconductor layer) 102 under the third electrode (gate electrode) 106 of the transistor.
  • the Fermi level fluctuates, and the resistance value between the first electrode 103 and the second electrode 104 changes.
  • the spatial region where the Fermi level fluctuates does not reach the bottom of the semiconductor 102, so There is a problem in that a leakage current is generated between the first electrode 103 and the second electrode 104 in a state where no pressure is applied to the body 107.
  • the resistance value between the first electrode 103 and the second electrode 104 does not change greatly even when pressure is applied to the piezoelectric body 107, and the voltage of the third electrode 106 is not changed.
  • the slope of the voltage-resistance characteristic indicating the change in resistance value with respect to the change in value is small, and there is a problem that the magnitude of the pressure applied to the piezoelectric body 107 cannot be detected with high accuracy. The same applies to the pressure sensor 1200.
  • the strain resistance element of the present invention includes a first insulator, a semiconductor formed on the first insulator, A first electrode and a second electrode formed on the semiconductor and spaced apart from each other; a second insulator formed on the semiconductor and between the first electrode and the second electrode; 2 comprising a third electrode formed on the insulator and a piezoelectric body formed in contact with the third electrode, and by applying strain to the piezoelectric body, the voltage value of the third electrode changes, When the voltage value of the third electrode changes, the Fermi level of the semiconductor changes, and when the Fermi level changes, the resistance value between the first electrode and the second electrode changes, and the resistance value is reduced.
  • the strain resistance element of the present invention can constitute a TFT by using the first electrode as a source electrode, the second electrode as a drain electrode, and the third electrode as a gate electrode.
  • the strain resistance element of the present invention has (1) a voltage-resistance characteristic indicating a change in resistance value between the first electrode and the second electrode with respect to a change in voltage value of the third electrode. It has an exponentially changing region, and (2) the inside of the exponentially changing region or the inside and the vicinity of the exponentially changing region is used for detecting the magnitude of the distortion. And (3) a spatial region where the Fermi level varies so as to reach the bottom of the semiconductor in the region used to detect the magnitude of strain. Since the strain resistance element of the present invention has the relationships (1) to (3), the leakage current between the first electrode and the second electrode is suppressed when no strain is applied to the piezoelectric body. On the other hand, when a strain is applied to the piezoelectric body, the voltage-resistance characteristic showing a change in the resistance value between the first electrode and the second electrode with respect to the change in the voltage value of the third electrode changes sharply. .
  • the relations (1) to (3) of the strain resistance element of the present invention can be realized by giving an appropriate carrier concentration to the semiconductor according to the type of semiconductor and the thickness of the semiconductor. . This will be described in detail below.
  • FIG. 5A shows a TFT 500 using Si having a thickness of 1 ⁇ m as a semiconductor as a calculation model.
  • the TFT 500 includes a first insulator made of SiO 2 having a thickness of 1 ⁇ m, a semiconductor made of Si having a thickness of 1 ⁇ m, a source electrode (first electrode), a drain electrode (second electrode), and a thickness of 40 nm.
  • the TFT 500 the carrier concentration of the semiconductor (Si) as a parameter, 1E13 cm -3, 1E14 cm -3, 1E15 cm -3, in the case where either of 1E16 cm -3, respectively, the semiconductor device
  • the voltage-current characteristic which shows the change of the electric current value between a source electrode and a drain electrode with respect to the change of the voltage value of a gate electrode computed with the simulator (semiconductor device simulator which the present applicant produced) is shown.
  • the work function of the gate electrode was set to 4.4 eV
  • the source electrode was set to 0 V
  • the drain electrode was set to 1 V.
  • the semiconductor (Si) has an electron affinity of 4.05 eV, a band gap of 1.12 eV, an electron effective mass of 0.92, a hole effective mass of 0.59, a base electron mobility of 1440 cm / Vs, and a base hole transfer. The degree was set to 480 cm / Vs.
  • a piezoelectric body is connected in series with the gate electrode (third electrode), and the voltage value of the third electrode changes according to the magnitude of strain applied to the piezoelectric body.
  • the degree of change in the current value (resistance value) per unit strain is large. That is, it is desirable that the slope of the voltage-current characteristic (voltage-resistance characteristic) is large.
  • the carrier concentration is 1E13 cm -3, is 1E14 cm -3 is relatively but has high sensitivity, if the carrier concentration is 1E15 cm -3, it is 1E16 cm -3, the sensitivity Is getting worse.
  • the effective thickness X of the spatial region where the Fermi level fluctuates was 0.7 ⁇ m.
  • the effective thickness X of the spatial region where the Fermi level fluctuates was 0.2 ⁇ m.
  • the effective thickness of the Fermi level with respect to the thickness of the semiconductor (Si) of 1 ⁇ m. Since the thickness X is too small, the Fermi level does not reach the bottom of the semiconductor when no strain is applied to the piezoelectric body (when the voltage V G of the gate electrode is 0 V). Accordingly, even when a strain is applied to the piezoelectric body, the degree of change in the current value (resistance value) per unit strain is small.
  • the first electrode and the second electrode with respect to the change in the voltage value of the third electrode can be obtained by setting the carrier concentration of the semiconductor to 1E14 cm ⁇ 3 or less.
  • the region where the voltage-resistance characteristic has an exponentially changing region and the spatial region where the Fermi level fluctuates is used to detect the magnitude of strain It can reach the bottom of the semiconductor.
  • the voltage-current characteristics at each carrier concentration shown in FIG. 5B are obtained by controlling the work function of the gate electrode and the space charge amount of the second insulator (gate insulating film), respectively. (Voltage axis) can be shifted in both left and right directions.
  • FIG. 7A shows a TFT 600 in which the thickness of a semiconductor made of Si is 0.65 nm as another calculation model having further excellent detection sensitivity.
  • the TFT 600 the carrier concentration of the semiconductor (Si) as a parameter, 1E13cm -3, 1E14cm -3, 1E15cm -3, 1E16cm -3, 1E17cm -3, in the case where either of 1E18 cm -3
  • the voltage-current characteristics calculated by each semiconductor device simulator are shown. In this calculation, the work function of the gate electrode was set to 4.4 eV, the source electrode was set to 0 V, and the drain electrode was set to 1 V.
  • the voltage-current characteristics are observed in all cases where the carrier concentration is 1E13 cm ⁇ 3 to 1E18 cm ⁇ 3.
  • the slope of (characteristic) is large and the sensitivity is high.
  • the slope of the voltage-current characteristic of the TFT 600 is larger than the slope of the voltage-current characteristic of the TFT 500 using Si having a thickness of 1 ⁇ m as a semiconductor, and is more favorable.
  • the voltage-current characteristics overlap in a region where the inclination is large. Therefore, the TFT 600 can obtain the same voltage-current characteristics even if the semiconductor carrier concentration is slightly shifted in the manufacturing process, and is industrially excellent.
  • the type of semiconductor is not limited to Si, and even with other types of semiconductors, high detection sensitivity can be obtained by giving the semiconductor an appropriate carrier concentration according to the thickness of the semiconductor.
  • FIG. 8A shows a TFT 700 including a semiconductor made of a MoS 2 film having a thickness of 0.65 nm as another calculation model.
  • the TFT 700 the carrier concentration of the semiconductor (MoS 2) as a parameter, 1E13cm -3, 1E14cm -3, 1E15cm -3, 1E16cm -3, 1E17cm -3, when either of 1E18 cm -3
  • the voltage-current characteristics calculated by each semiconductor device simulator are shown.
  • the work function of the gate electrode was set to 5.1 eV
  • the source electrode was set to 0 V
  • the drain electrode was set to 1 V.
  • the semiconductor (MoS 2) is, 4.60EV electron affinity, 1.80 eV band gap, electron effective mass 0.48, hole effective mass of 0.60, based electron mobility 10 cm / Vs, the base hole The mobility was set to 2 cm / Vs.
  • the magnitude of strain applied to the piezoelectric body can be increased with high accuracy by setting the carrier concentration of the semiconductor to 1E18 cm ⁇ 3 or less. Can be detected.
  • MoS 2 (a kind of transition metal dichalcogenide) used for the semiconductor of the TFT 700 also has an advantage that it can be easily formed on the first insulator by a thin film technique, as will be described later.
  • the strain resistance element of the present invention has a high precision of the strain applied to the piezoelectric body by giving an appropriate carrier concentration to the semiconductor according to the type of semiconductor and the thickness of the semiconductor. The size can be detected.
  • the effective thickness of the spatial region where the Fermi level fluctuates is equal to the thickness of the semiconductor.
  • the spatial region where the Fermi level fluctuates reaches the bottom of the semiconductor in the region used for detecting the magnitude of the strain, and the first electrode and the first electrode when the strain is not applied to the piezoelectric body. While the leakage current between the two electrodes is suppressed, when a strain is applied to the piezoelectric body, the change in the resistance value between the first electrode and the second electrode with respect to the change in the voltage value of the third electrode is reduced. The voltage-resistance characteristics shown change sharply. Therefore, the magnitude of the strain applied to the piezoelectric body can be detected with high accuracy.
  • the semiconductor carrier concentration is preferably as high as possible, for example, 1E17 cm ⁇ 3.
  • the above is preferable. That is, as the semiconductor carrier concentration increases, the effective thickness of the spatial region in which the Fermi level varies decreases, but if the spatial region in which the Fermi level varies reaches the bottom of the semiconductor, The carrier concentration is preferably as high as possible.
  • the resistance value between the first electrode and the second electrode is detected by the detection circuit (bridge circuit or the like), the resistance value on the circuit can be reduced, noise is reduced, This is because the magnitude of the strain applied to the piezoelectric body can be detected with high accuracy.
  • the specific semiconductor film thickness is preferably 200 nm or less. This is because the spatial region where the Fermi level fluctuates easily reaches the bottom of the semiconductor in the region used to detect the magnitude of strain.
  • the semiconductor has a single-layer or multi-layer structure depending on at least one material selected from graphene, transition metal dichalcogenide (TMD), hexagonal boron nitride (h-BN), and phosphorene. It is preferable to be formed.
  • TMD transition metal dichalcogenide
  • h-BN hexagonal boron nitride
  • phosphorene phosphorene
  • the above materials are called 2D materials (two-dimensional materials). This is because if these 2D materials are used, a semiconductor (semiconductor film) can be easily and inexpensively formed by thin film technology such as CVD (Chemical Vapor Deposition) as compared with Si or the like.
  • the transition metal dichalcogenide includes, for example, MoS 2 , MoSe 2 , WS 2 , WSe 2 and the like.
  • a third electrode is formed immediately above the first electrode and the second electrode, a piezoelectric body is formed directly above the third electrode, and a fourth electrode is formed directly above the piezoelectric body.
  • Can do It is preferable to adopt this structure when the detection sensitivity is improved by further applying a strain applied to the piezoelectric body to the semiconductor (strain resistance film). Note that whether the detection sensitivity is improved by applying pressure to the semiconductor depends on the type of the semiconductor.
  • a third electrode is formed immediately above the first electrode and the second electrode, and the third electrode is extended to a region other than between the first electrode and the second electrode.
  • a piezoelectric body may be formed in contact with the third electrode, and a fourth electrode may be formed in contact with the piezoelectric body. It is preferable to adopt this structure when the detection sensitivity is lowered by further applying strain applied to the piezoelectric body to the semiconductor (strain resistance film). As described above, whether or not the detection sensitivity is reduced by applying pressure to the semiconductor depends on the type of the semiconductor. Also, with such a structure, the piezoelectric body can be easily polarized or spontaneously polarized by applying a predetermined voltage between the third electrode and the fourth electrode in the manufacturing process of the strain resistance element. It is possible to increase the polarization of the piezoelectric body.
  • a mechanical quantity detection sensor such as a pressure sensor, a strain gauge, an acceleration sensor, or an angular velocity sensor can be produced using the strain resistance element of the present invention.
  • a mechanical quantity detection sensor with high detection accuracy can be obtained.
  • a microphone can be manufactured using the strain resistance element of the present invention. In this case, a microphone with high detection accuracy can be obtained.
  • the strain resistance element of the present invention has a region in which the voltage-resistance characteristic indicating the change in the resistance value between the first electrode and the second electrode with respect to the change in the voltage value of the third electrode changes exponentially.
  • the mechanical quantity detection sensor of the present invention uses the above-described strain resistance element of the present invention, the detection accuracy is high.
  • FIG. 1A is a cross-sectional view showing the strain resistance element 100 according to the first embodiment.
  • FIG. 1B is a cross-sectional view showing the pressure sensor 200 according to the first embodiment using the strain resistance element 100.
  • FIG. 2A is a cross-sectional view showing a strain resistance element 300 according to the second embodiment.
  • FIG. 2B is a cross-sectional view showing a pressure sensor 400 according to the second embodiment using a strain resistance element 300.
  • 10 is a cross-sectional view showing a pressure sensor 1100 disclosed in Patent Literature 1.
  • FIG. 10 is a cross-sectional view showing a pressure sensor 1200 disclosed in Patent Document 2.
  • FIG. FIG. 5A is a cross-sectional view of a TFT 500 that is a calculation model.
  • FIG. 5B is a graph showing the voltage-current characteristics of the TFT 500.
  • FIG. 7A is a cross-sectional view of a TFT 600 that is a calculation model.
  • FIG. 7B is a graph showing the voltage-current characteristics of the TFT 600.
  • FIG. 8A is a cross-sectional view of a TFT 700 which is a calculation model.
  • FIG. 8B is a graph showing the voltage-current characteristics of the TFT 700.
  • each embodiment shows an embodiment of the present invention by way of example, and the present invention is not limited to the content of the embodiment. Moreover, it is also possible to implement combining the content described in different embodiment, and the implementation content in that case is also included in this invention. Further, the drawings are for helping understanding of the embodiment, and may not be drawn strictly. For example, a drawn component or a dimensional ratio between the components may not match the dimensional ratio described in the specification. In addition, the constituent elements described in the specification may be omitted in the drawings or may be drawn with the number omitted.
  • FIG. 1A shows a strain resistance element 100 according to the first embodiment.
  • FIG. 1B shows a pressure sensor 200 according to the first embodiment using the strain resistance element 100.
  • 1A and 1B are both cross-sectional views.
  • the strain resistance element 100 includes a first insulator 1 made of SiO 2 .
  • the thickness of the first insulator 1 is 0.2 ⁇ m. Note that the strain resistance element 100 uses the SiO 2 layer 53 of the membrane 55 of the pressure sensor 200 described later as the first insulator 1.
  • a semiconductor 2 made of a single-layer MoS 2 film is formed on the first insulator 1.
  • the semiconductor 2 is n-type.
  • the thickness of the semiconductor 2 is 0.65 nm.
  • the carrier concentration of the semiconductor 2 is set to 1E17 cm ⁇ 3 .
  • the first electrode 3 and the second electrode 4 are formed on the semiconductor 2 so as to be separated from each other.
  • the first electrode 3 and the second electrode 4 are each formed in a two-layer structure in which the first layer is made of 20 nm of Cr and the second layer is made of 100 nm of Al.
  • the first electrode 3 and the second electrode 4 are each drawn as one layer for easy viewing.
  • a second insulator 5 made of SiO 2 is formed on the semiconductor 2 so as to partially cover the first electrode 3 and the second electrode 4.
  • the thickness of the second insulator 5 is 40 nm.
  • a third electrode 6 made of Pd is formed on the second insulator 5.
  • the thickness of the third electrode 6 is 100 nm.
  • the work function of the third electrode 6 is set to 5.1 eV.
  • the semiconductor 2, the second insulator 5, the first electrode 3, the second electrode 4, the second insulator 5, and the third electrode 6 are TFT (Thin Film Transistor; Thin film transistor).
  • the first electrode 3 corresponds to the source electrode
  • the second electrode 4 corresponds to the drain electrode
  • the third electrode 6 corresponds to the gate electrode.
  • the configured TFT is the same as the TFT 700 shown as the calculation model in the column “Means for Solving the Problems”.
  • a piezoelectric body 7 made of an AlN film is formed on the third electrode 6.
  • the thickness of the piezoelectric body 7 is 100 nm.
  • a fourth electrode 8 is formed on the piezoelectric body 7.
  • the fourth electrode 8 is formed in a two-layer structure in which the first layer is made of 20 nm of Cr and the second layer is made of 100 nm of Al. However, in the drawing, the fourth electrode 8 is drawn as one layer for easy viewing. The electrode area is 0.01 mm 2 . In the present embodiment, the fourth electrode 8 is grounded.
  • the strain resistance element 100 according to the first embodiment having the above structure has a current value between the source electrode (first electrode 3) and the drain electrode (second electrode 4) when strain is applied to the piezoelectric body 7. Changes.
  • first electrode 3 the source electrode
  • second electrode 4 the drain electrode
  • the source electrode - current flowing between the drain electrode based on the calculation result of the calculation model TFT700 shown in FIG. 8 (B), becomes 13.7 ⁇ A / cm 2.
  • the gauge factor K 23000. This value is two or more digits higher than that of a strain resistance element having a gauge factor K ⁇ 180 using Si as a semiconductor, which is generally used at present, and the strain resistance element 100 according to the present embodiment. However, it shows that the strain resistance element is very sensitive.
  • the resistance value of the strain resistance element 100 is desirably small from the viewpoint of reducing electrical noise in detection.
  • the pressure sensor 200 includes a membrane 55.
  • the membrane 55 is produced by preparing a membrane substrate 51 composed of a stacked Si layer 52 and SiO 2 layer 53 and providing an opening 54 on the back surface of the Si layer 52.
  • the thickness of the membrane 55 is 10 ⁇ m for the Si layer 52 and 0.2 ⁇ m for the SiO 2 layer 53.
  • the strain resistance element 100 described above is formed on the SiO 2 layer 53 in the membrane 55.
  • the pressure sensor 200 has four strain resistance elements 100 formed at predetermined positions.
  • the strain resistance element 100 uses the SiO 2 layer 53 of the membrane 55 as the first insulator 1 as described above.
  • the pressure sensor 200 can detect the magnitude of the pressure applied to the membrane 55 by detecting the resistance value of the strain resistance element 100.
  • the pressure sensor 200 of the present embodiment is highly sensitive because it uses the highly sensitive strain resistance element 100 of the present embodiment.
  • a membrane substrate 51 in which a Si layer 52 and a SiO 2 layer 53 are laminated to form the membrane 55 of the pressure sensor 200 is prepared.
  • a MoS 2 film is formed on the surface of the SiO 2 layer 53 of the membrane substrate 51 as the semiconductor 2 by, for example, CVD (Chemical Vapor Deposition).
  • MoS 2 is patterned by a commonly used photolithography technique and etching technique.
  • the first electrode 3 and the second electrode 4 are formed on the semiconductor 2 (MoS 2 film) formed on the SiO 2 layer 53 by using a film formation technique and a photolithography technique that are generally used.
  • the second insulator 5, the third electrode 6, the piezoelectric body 7, and the fourth electrode 8 are formed, and the four strain resistance elements 100 are formed.
  • an opening 54 is formed in the Si layer 52 of the membrane substrate 51 by etching to form a membrane 55, thereby completing the pressure sensor 200 in which the four strain resistance elements 100 are formed.
  • FIG. 2A shows a strain resistance element 300 according to the second embodiment.
  • FIG. 2B shows a pressure sensor 400 according to the first embodiment using the strain resistance element 300.
  • 2A and 2B are cross-sectional views.
  • the strain resistance element 300 includes a first insulator 11 made of SiO 2 .
  • the thickness of the first insulator 11 is 5 ⁇ m.
  • the strain resistance element 300 uses the SiO 2 layer 63 of the membrane 65 of the pressure sensor 400 described later as the first insulator 11.
  • a semiconductor 12 made of Si is formed on the first insulator 11.
  • the semiconductor 12 is n-type.
  • the thickness of the semiconductor 12 is 0.65 nm.
  • the carrier concentration of the semiconductor 12 is set to 1E18 cm ⁇ 3 .
  • the first electrode 13 and the second electrode 14 are formed on the semiconductor 12 so as to be separated from each other.
  • the first electrode 13 and the second electrode 14 are each made of 100 nm Al.
  • the semiconductor 12 on the first electrode 13 partially covers, and the second electrode 14 completely covers, and providing the second insulator extension 15a which is further extended in the right direction on the drawings, of SiO 2
  • a second insulator 15 is formed.
  • the thickness of the second insulator 15 is 40 nm.
  • a third electrode 16 made of Ti is formed on the second insulator 15.
  • the third electrode 16 has a third electrode extension 16a formed on the second insulator extension 15a.
  • the thickness of the third electrode 16 is 100 nm.
  • the work function of the third electrode 16 is set to 4.4 eV.
  • the semiconductor 12, the second insulator 15, the first electrode 13, the second electrode 14, the second insulator 15, and the third electrode 16 constitute a TFT.
  • the first electrode 13 corresponds to the source electrode
  • the second electrode 14 corresponds to the drain electrode
  • the third electrode 16 corresponds to the gate electrode.
  • the configured TFT is the same as the TFT 600 shown as the calculation model in the column “Means for Solving the Problems”.
  • a piezoelectric body 17 made of a ZnO film is formed on the third electrode extension 16a.
  • the thickness of the piezoelectric body 17 is 100 nm.
  • a fourth electrode 18 is formed on the piezoelectric body 17.
  • the fourth electrode 18 is made of 100 nm Al.
  • the electrode area is 0.01 mm 2 .
  • the strain resistance element 300 when a strain is applied to the piezoelectric body 17, a current flows between the source electrode (first electrode 13) and the drain electrode (second electrode 14). Flowing.
  • first electrode 13 the source electrode
  • second electrode 14 the drain electrode
  • the strain resistance element 300 in the initial state (a state in which no strain is applied to the piezoelectric body 17), spontaneous polarization occurs in the piezoelectric body 17 itself, but a voltage is applied to the third electrode 16 in contact with the piezoelectric body 17. Does not occur. At this time, the current flowing between the source electrode and the drain electrode is 1.01 ⁇ A / cm 2 based on the calculation result of the calculation model TFT 600 shown in FIG.
  • the gauge factor of the strain resistance element 300 is calculated.
  • the gauge factor K 18000. This value is at least two orders of magnitude higher than that of a strain resistance element having a gauge factor K ⁇ 180 using Si as a semiconductor that is generally used at present, and the strain resistance element 300 according to the present embodiment. However, it shows that the strain resistance element is very sensitive.
  • the pressure sensor 400 includes a membrane 65.
  • the membrane 65 is composed of a SiO 2 layer 63 and is supported by a pedestal 62 whose periphery is composed of Si.
  • the thickness of the SiO 2 layer 63 is 5 ⁇ m.
  • the pressure sensor 400 has four strain resistance elements 300 formed therein.
  • Each strain resistance element 300 is formed such that the piezoelectric body (ZnO film) 17 is disposed immediately above the membrane 65 and the semiconductor (Si film) 12 is disposed immediately above the pedestal 62. That is, the semiconductor 12 is formed immediately above the pedestal 62 that is not easily affected by strain.
  • This structure is preferably adopted when the detection sensitivity is lowered by applying the strain applied to the piezoelectric body 17 to the semiconductor 12.
  • the semiconductor of the strain resistance element 100 as in the pressure sensor 200 of the first embodiment. 2 and the piezoelectric body 7 are preferably overlapped in the vertical direction so as to be disposed immediately above the membrane 55.
  • the pressure sensor 400 when a differential pressure is applied to the top and bottom of the membrane 65, the membrane 65 bends and strain is applied to the strain resistance element 300.
  • the pressure sensor 400 can detect the magnitude of the pressure applied to the membrane 65 by detecting the resistance value of the strain resistance element 300.
  • the pressure sensor 400 of the present embodiment is highly sensitive because it uses the highly sensitive strain resistance element 300 of the present embodiment.
  • strain resistance element 100 and the pressure sensor 200 according to the first embodiment and the strain resistance element 300 and the pressure sensor 400 according to the second embodiment have been described.
  • present invention is not limited to the contents described above, and various modifications can be made in accordance with the spirit of the invention.
  • the strain resistance element 100 uses a MoS 2 film as the semiconductor 2 and the strain resistance element 300 uses a Si film as the semiconductor 12, the materials of the semiconductors 2 and 12 are not limited to these, and various materials are used. can do. However, when 2D materials such as graphene, transition metal dichalcogenide, hexagonal boron nitride, and phospholene are used as the semiconductor material, it is easier and cheaper to use a thin film technology than when using Si or the like. Can be formed.
  • the strain resistance element 100 using the SiO 2 layer 53 of the membrane 55 of the pressure sensor 200 to the first insulator 1, the strain resistance element 300, the membrane 65 of the pressure sensor 400 to the first insulator 11 SiO 2 Layer 63 is used.
  • the first insulator 1, 11, instead of using the SiO 2 layer 53 and 63 of the membrane 55, 65 may be used its own insulation layer.
  • the pressure sensors 200 and 400 are manufactured as the mechanical quantity detection sensors, but the type of the mechanical quantity detection sensor is arbitrary, for example, a strain gauge, an acceleration sensor, an angular velocity sensor, or the like. It may be.
  • a microphone may be constituted by the strain resistance element (pressure sensor) of the present invention.

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  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un élément résistant à la contrainte présentant une grande précision de détection. Dans l'élément résistant à la contrainte de la présente invention, des propriétés de résistance à la tension qui représentent une variation de la valeur de résistance entre une première électrode (3) et une deuxième électrode (4) par rapport à une variation de la valeur de tension d'une troisième électrode (6) présentent une région qui change exponentiellement, et la plage dans cette région qui change exponentiellement ou dans cette région et à proximité de cette dernière qui change exponentiellement est la région servant à la détection de la taille de la contrainte. De plus, la région d'espace où le niveau de Fermi fluctue atteint la section de fond d'un semi-conducteur (2) dans la région servant à la détection de la taille de la contrainte.
PCT/JP2017/001285 2017-01-16 2017-01-16 Élément résistant à la contrainte, capteur de détection de quantité mécanique et microphone WO2018131170A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0487376A (ja) * 1990-07-31 1992-03-19 Clarion Co Ltd 圧力センサ
JPH07297412A (ja) * 1994-04-28 1995-11-10 Masaki Esashi ピエゾ抵抗素子
JP2010008167A (ja) * 2008-06-25 2010-01-14 Toyota Motor Corp 歪み検出装置及び歪み検出方法
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0487376A (ja) * 1990-07-31 1992-03-19 Clarion Co Ltd 圧力センサ
JPH07297412A (ja) * 1994-04-28 1995-11-10 Masaki Esashi ピエゾ抵抗素子
JP2010008167A (ja) * 2008-06-25 2010-01-14 Toyota Motor Corp 歪み検出装置及び歪み検出方法
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor

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