WO2018125015A1 - Technique pour la production d'une couche d'oxyde conducteur transparent par une technique d'enduction au rouleau - Google Patents
Technique pour la production d'une couche d'oxyde conducteur transparent par une technique d'enduction au rouleau Download PDFInfo
- Publication number
- WO2018125015A1 WO2018125015A1 PCT/TR2017/050704 TR2017050704W WO2018125015A1 WO 2018125015 A1 WO2018125015 A1 WO 2018125015A1 TR 2017050704 W TR2017050704 W TR 2017050704W WO 2018125015 A1 WO2018125015 A1 WO 2018125015A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- technique
- roller
- coating
- solution
- glass substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000007761 roller coating Methods 0.000 title description 14
- 238000000576 coating method Methods 0.000 claims abstract description 53
- 239000011248 coating agent Substances 0.000 claims abstract description 46
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000011982 device technology Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 68
- 239000011521 glass Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 49
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 229910003437 indium oxide Inorganic materials 0.000 claims description 13
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 13
- QWZCCUBKZWBKJH-UHFFFAOYSA-N C(C)(=O)OCC.[Sn] Chemical compound C(C)(=O)OCC.[Sn] QWZCCUBKZWBKJH-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 7
- 229960000583 acetic acid Drugs 0.000 claims description 7
- WSDMMYXIEBLQPV-UHFFFAOYSA-N indium(3+);pentahydrate Chemical compound O.O.O.O.O.[In+3] WSDMMYXIEBLQPV-UHFFFAOYSA-N 0.000 claims description 7
- 239000007858 starting material Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 claims description 4
- 239000012362 glacial acetic acid Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000008240 homogeneous mixture Substances 0.000 claims description 2
- 239000012456 homogeneous solution Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 238000003287 bathing Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/113—Deposition methods from solutions or suspensions by sol-gel processes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/118—Deposition methods from solutions or suspensions by roller-coating
Definitions
- This invention relates to the production of transparent conductive oxide thin films that form the basis of electronic device technology by a roller coating technique which allows them to deposit on glass surfaces with large areas having high transparency and electric conductivity under atmospheric pressure, without requiring a vacuum environment.
- Thin film is the name given to the materials of various layers with thicknesses ranging from a size of nanometres to micrometers. Thin films, gaining popularity among research-development studies carried out in recent years form the basis of electronic device technology.
- transparent conductive oxide thin films include examples such as flat panel screen electrodes, polymer electronics, gas sensors, varistors, solar cells and low emission (low-E) surface coating applications which reduce the emission value of glass surfaces in heat thermal insulation, respectively.
- films with high optical transparency are used on the front surface.
- the transparent material used on the front surface must be as conductive as metal in order to collect current carriers. This is only possible with transparent conductive oxide films.
- ITO indium tin oxide
- FTO fluorescence tin oxide
- AZO antimony doped zinc oxide
- GZO gallium doped zinc oxide
- PLD pulsed laser deposition
- MBE molecular beam epitaxy
- ITO which is the most commonly-used among transparent conductive oxide films, is a highly disordered n-type wideband gap semiconductor obtained by doping tin (Sn) to indium oxide (ImCb). ITO films with a commercial value need to have a visible range light transparency of over 80% and surface resistance below a value of 20 ohm/square; in other words, transparency and electric conductivity of a film is desired to be high.
- the most commonly used technique for the production of ITO films in today's technology is magnetron sputtering technique. In this technique, large volume vacuum systems are required for large scale implementations. Moreover, more than one sputtering source is required for the coating to deposit homogeneously on the whole surface. Since, technique magnetron sputtering technique is based on high cost and complicated systems, it is of great importance that alternative techniques which do not require a vacuum environment be developed and be introduced into the field of technology.
- U.S. document no US2016024640 (Al) in the state of the art discloses a transparent and conductive film and the production technique for this film.
- the invention mentioned in the document relates to a transparent oxide film with high transparency in the visible light range and an organic polymer film base.
- a transparent conductive oxide coating is applied on the substrate.
- the invention which is a transparent conductive oxide film comprises a thin conductive coating which has low resistivity and surface tension.
- the coating is indium tin oxide (ITO).
- ITO indium tin oxide
- the coating applied on the polymer substrate is applied by RF superimposed DC spraying.
- glass is used as substrate and ITO is coated on the glass by roller coating technique.
- the RF superimposed DC sputtering technique mentioned in the invention in the state of the art is a completely different process than the roller coating technique.
- the object of the present invention is to realize a transparent conductive oxide film production method by means of a roll coating technique which enables coating on wide surface materials at atmospheric pressure.
- Another object of this invention is to realize a technique for the production of a transparent conductive oxide film by a roller coating technique which allows high quality production with high optical transparency at room conditions.
- Yet another object of this invention is to realize a technique for the production of a transparent conductive oxide film by a roller coating technique which allows the production of a film with high optical transparency at the visible range directly on the line by using suitable solvents.
- a solution of the film which is to be formed on the glass is prepared firstly.
- This solution is a solution which comprises tin and indium as starting materials, preferably at different proportions.
- wet films are obtained by applying them on the glass surface by a roller coating technique.
- a glass substrate whereon the coating is to be applied is cleaned by using chemicals in an ultrasonic bath.
- the coating solution is poured into an application vessel of a roller device, and the glass substrate is coated after the solution passes through the rollers.
- the coated glass is subjected to heat treatment to remove the organic components to produce a thin film.
- the obtained film is annealed and oxide layers are formed.
- Figure 1 is a schematic view of the steps of the technique for the production of a transparent conductive oxide film by roller coating technique.
- Figure 2 is a schematic view of the technique for the production of a transparent conductive oxide film by roller coating technique.
- Figure 3 is a graph of the optical transparency (%, y axis) - wavelength (nm, x axis) of a glass 5 times ITO coated by roller coating technique and an uncoated glass
- a technique for the production (100) of a transparent oxide thin film (F), wherein transparent conductive oxide thin films which form the basis of electronic device technology are produced by a roller coating technique which allows them to deposit on glass surfaces with large areas with high transparency and electric conductivity without requiring vacuum systems, comprises the steps of:
- an indium oxide solution (S) comprising indium (III) nitratehydrate and tin 2-ethyl ethanoate as starting materials and triethanolamine as a stabilizer at different ratios is produced (1011),
- a q quality parameter is determined according to the field of utilization of the film (F) to be formed on the glass substrate (A) before starting the coating process, q quality parameter of the film (F) varies according to the field of the utilization of the product to be obtained at the end of the process.
- Q, quality parameter can be the thickness, optical transparency, resistivity, mobility or carrier intensity of the film (F).
- the glass substrate (A) is subjected to coating processes successively.
- the solution (S) to be used is prepared (101) first.
- the solution (S) is prepared by sol-gel technique.
- a homogeneous mixture is obtained by dissolving suitable salts or alkoxides of the elements in the chemical composition of the film (F) in a suitable solvent.
- suitable salts or alkoxides of the elements in the chemical composition of the film (F) in a suitable solvent.
- S solution (S) (101)
- it comprises starting materials of tin and indium preferably at different proportions.
- Indium (III) nitratehydrate or indium acetate or tin (II) chloride or 2-ethyl ethanoate as starting materials is used in the step of producing (1011) an indium oxide solution (S) comprising tin.
- indium (III) nitratehydrate and tin 2-ethyl ethanoate are chosen as starting materials.
- Triethanolamine is preferably used as a stabilizer.
- ethanol as a solvent and preferably acetic acid as a catalyst are used.
- the amounts of indium (III) pentahydrate and acetic acid are determined first.
- the solution (S) formed by indium (III) pentahydrate and glacial acetic acid and the solution (S) formed by tin 2-ethyl ethanoate and ethanol are stirred separately at room temperature for 1-2 hours. After the stirring is completed separately, the stirring process is repeated after combining the two solutions (S). While preparing (101) the coating solution (S), the molar ratio of Sn/In in the solution is adjusted so as to be in a range of % 10-20. The said Sn/In ratio is determined by indium and tin starting materials.
- the stirring process of the two solutions (S) continues at room temperature for 12-24 hours.
- the stirring process is preferably performed with a magnetic mixer.
- a thin film (F) is obtained (102).
- glass substrate whereon the coating is to be applied are cleaned (1021).
- Glass substrate (A) are cleaned by using chemicals in an ultrasonic bath.
- Glass substrate (A) used in a preferred embodiment of the invention preferably have a size of 200 mm x 300 mm.
- a coating is applied (1022) on the glass substrate (A).
- the prepared solution (S) is first poured into a solution vessel (V) of a roller (R). The coating process is started after the solution (S) and the glass substrate (A) are put in a roller (R) device.
- the glass substrate (A) is coated with the solution (S) by means of a cylindrical roller (R) ( Figure 2, in the arrow direction).
- a cylindrical roller (R) Figure 2, in the arrow direction.
- the type of the roller (R) and the rotational speed of it thinner or thicker films (F) are obtained.
- the glass substrate (A) is coated (1022)
- the glass substrate (A) is heat treated (1023) at a low temperature.
- organic components of the solution (S) used in coating are removed from the surface of the glass substrate (A).
- the removing process is preferably performed in an incubator by carrying out a heat treatment.
- a thin film (F) layer is formed on the glass substrate (A).
- films (F) After the heat treatment, films (F) still have an amorphous form.
- films (F) with an amorphous form are annealed (1024) at a high temperature, in open air or in an inert gas environment.
- the film (F) obtained on the glass substrate (A) is measured for the pre-determined quality parameter q. If the value obtained as a result of the measurement is concordant with the pre-determined q value, the process is ended. If the quality parameter q of the film (F) obtained as a result of the measurement hasn't reached the pre-determined value, the process is repeated (1025) by returning to step (1022).
- the processes of (1022), (1023) and (1024) are repeated (1025) successively until the pre-determined q quality parameter is achieved and transparent oxide layers are formed.
- the quality parameter q of the film (F) which is desired to be obtained on the glass substrate (A) by the technique for production (100) of a transparent conductive oxide film is the thickness of the obtained film (F) and the targeted q value is determined as 400 nm.
- the thickness of the coating formed on the glass substrate (A) as a result of the first cycle is measured as 100 nm.
- a film (F) with a thickness of 400 nm on the glass substrate (A) is formed by performing three more cycles.
- the thickness of ITO films (F) coated five times is measured about 350 nm.
- the resistivity, mobility and carrier intensity of an ITO sample are measured respectively as 4.49xl0 "3 ⁇ , 5.73 cm 2 /Vs and 2.42 x 10 20 cm “3 .
- a graph of the optical transparency of a 5 times ITO coated glass (I/G) with a roller (R) device and an uncoated glass is given.
- the vertical axis (y axis) represents transparency (%) and the horizontal axis (x axis) represents wavelength.
- the transparency of ITO films (F) in the visible range is over 84%.
- Results of hall effect measurements and results of UV-VIS spectrometry shows that transparent conductive oxide films produced with a roller (R) technique can be used in optoelectronic applications.
- a transparent conductive oxide film (F) is produced on a glass substrate (A) under atmospheric pressure without using high-cost and complex systems such as vacuum systems.
- the technique of the invention allows operation under atmospheric pressure and the coating of glass substrate (A) with a large surface area. Therefore, the technique of the invention can be used in industrial applications.
- the absence of any vacuum devices in the system reduces the cost of the system and coating.
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
Abstract
L'invention concerne une technique (100) pour la production de couches minces d'oxyde transparent (F), qui forme la base d'une technologie de dispositif électronique ayant des propriétés élevées de transparence et de conductivité électrique, sans nécessiter de systèmes sous vide, sous pression atmosphérique sur des surfaces ayant une grande superficie si nécessaire, avec des techniques d'enduction au rouleau (R).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TR201620296 | 2016-12-30 | ||
TR2016/20296 | 2016-12-30 |
Publications (1)
Publication Number | Publication Date |
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WO2018125015A1 true WO2018125015A1 (fr) | 2018-07-05 |
Family
ID=61157279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/TR2017/050704 WO2018125015A1 (fr) | 2016-12-30 | 2017-12-27 | Technique pour la production d'une couche d'oxyde conducteur transparent par une technique d'enduction au rouleau |
Country Status (1)
Country | Link |
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WO (1) | WO2018125015A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110551976A (zh) * | 2019-08-23 | 2019-12-10 | 陕西工业职业技术学院 | 一种真空玻璃镀膜设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4303554A (en) * | 1979-06-22 | 1981-12-01 | Hitachi, Ltd. | Composition and process for producing transparent conductive film |
GB2308080A (en) * | 1995-12-15 | 1997-06-18 | Samsung Display Devices Co Ltd | Method for forming a transparent conductive layer |
EP1012635A2 (fr) * | 1997-01-27 | 2000-06-28 | Peter D. Haaland | Revetements, procedes et appareil pour reduire la reflexion a partir de substrats optiques |
US20160024640A1 (en) | 2013-01-16 | 2016-01-28 | Nitto Denko Corporation | Transparent conductive film and production method therefor |
-
2017
- 2017-12-27 WO PCT/TR2017/050704 patent/WO2018125015A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4303554A (en) * | 1979-06-22 | 1981-12-01 | Hitachi, Ltd. | Composition and process for producing transparent conductive film |
GB2308080A (en) * | 1995-12-15 | 1997-06-18 | Samsung Display Devices Co Ltd | Method for forming a transparent conductive layer |
EP1012635A2 (fr) * | 1997-01-27 | 2000-06-28 | Peter D. Haaland | Revetements, procedes et appareil pour reduire la reflexion a partir de substrats optiques |
US20160024640A1 (en) | 2013-01-16 | 2016-01-28 | Nitto Denko Corporation | Transparent conductive film and production method therefor |
Non-Patent Citations (1)
Title |
---|
LIU J ET AL: "PREPARATION, NANOSTRUCTURE AND PROPERTIES OF INDIUM TIN OXIDE (ITO) FILMS ON GLASS SUBSTRATES. PART 1. PREPARATION AND NANOSTRUCTURE", PHYSICS AND CHEMISTRY OF GLASSES, SOCIETY OF GLASS TECHNOLOGY, SHEFFIELD, GB, vol. 40, no. 5, 1 October 1999 (1999-10-01), pages 277 - 281, XP000890624, ISSN: 0031-9090 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110551976A (zh) * | 2019-08-23 | 2019-12-10 | 陕西工业职业技术学院 | 一种真空玻璃镀膜设备 |
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