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WO2018120811A1 - Solution de polissage chimico-mécanique et application associée - Google Patents

Solution de polissage chimico-mécanique et application associée Download PDF

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Publication number
WO2018120811A1
WO2018120811A1 PCT/CN2017/094322 CN2017094322W WO2018120811A1 WO 2018120811 A1 WO2018120811 A1 WO 2018120811A1 CN 2017094322 W CN2017094322 W CN 2017094322W WO 2018120811 A1 WO2018120811 A1 WO 2018120811A1
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WIPO (PCT)
Prior art keywords
mechanical polishing
chemical mechanical
polishing liquid
liquid according
copper
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PCT/CN2017/094322
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English (en)
Chinese (zh)
Inventor
杨俊雅
荆建芬
张建
宋凯
蔡鑫元
姚颖
潘依君
杜玲曦
王春梅
Original Assignee
安集微电子科技（上海）股份有限公司
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Publication of WO2018120811A1 publication Critical patent/WO2018120811A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Definitions

  • the invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and its application in polishing metallic copper.
  • the copper interconnect can only be fabricated by a damascene process, namely: A trench is formed in the first layer, and a copper barrier layer and copper are filled in the trench to form a metal wiring and overlying the dielectric layer. The excess copper/copper barrier on the dielectric layer is then removed by chemical mechanical polishing leaving a single interconnect in the trench.
  • the chemical mechanical polishing process of copper is generally divided into three steps. The first step is to remove a large amount of copper on the surface of the substrate and leave a certain thickness of copper with a high and low removal rate. Steps remove the remaining metallic copper with a lower removal rate and stop at the barrier layer. In step 3, the barrier layer and a portion of the dielectric layer and metallic copper are removed by a barrier polishing solution to achieve planarization.
  • copper polishing should remove excess copper on the barrier layer as soon as possible, and on the other hand, minimize the dishing of the polished copper wire.
  • the metal layer Prior to copper polishing, the metal layer is partially recessed above the copper wire.
  • the copper on the dielectric material is easily removed (higher) at the bulk pressure, while the copper at the depression is subjected to a lower polishing pressure than the bulk pressure, and the copper removal rate is small. As the polishing progresses, the height difference of the copper is gradually reduced to achieve flattening.
  • the dielectric layer uses low dielectric (low dielectric) with low mechanical strength (low -k) Materials
  • wiring layers are also more and more
  • the requirements for copper chemical mechanical polishing are also higher and higher. It is required to reduce the polishing pressure while ensuring the removal rate of copper, improve the flattening of the surface of the copper wire, and control surface defects.
  • the linewidth cannot be reduced indefinitely, and the semiconductor industry no longer relies on integrating more devices on a single chip to improve performance, but instead shifts to multi-chip packages.
  • TSV Through-silicon via
  • the current TSV process combines a conventional IC process to form copper vias through a silicon substrate, that is, copper is filled in the TSV opening to achieve conduction, and excess copper after filling needs to be removed by chemical mechanical polishing to achieve planarization.
  • the excess copper in the surface after filling is usually several to several tens of micrometers thick due to the deep through-silicon via. In order to quickly remove these extra copper. It is usually required to have a high copper removal rate while the surface roughness after polishing is good. In order to make copper better in semiconductor technology, people are constantly trying to improve the new polishing solution.
  • Chinese patent CN1256765C provides a polishing liquid containing a chelating organic acid buffer system composed of citric acid and potassium citrate.
  • CN1195896C employs a polishing liquid containing an oxidizing agent, a carboxylate such as ammonium citrate, an abrasive slurry, an optional triazole or triazole derivative.
  • CN1459480A provides a copper chemical mechanical polishing liquid comprising a film forming agent and a film forming aid: the film forming agent is composed of a buffer solution composed of a mixture of a strong base and acetic acid, and the film forming aid is potassium nitrate (sodium) salt. .
  • a metal chemical mechanical polishing slurry comprising an aramid silicone, an alkane polysiloxane, A surfactant of a polyoxyalkylene ether and a copolymer thereof.
  • US Pat. No. 6,821,897 B2 provides a copper chemical mechanical polishing method using a polishing agent containing a polymer complexing agent, which employs a negatively charged polymer including sulfuric acid and its salts, sulfates, phosphoric acid, phosphates, phosphates, and the like.
  • the US5527423 metal chemical mechanical polishing slurry comprises a surfactant: aramid siloxane, polysiloxane, polyoxyalkylene ether and copolymers thereof.
  • Citri Patent CN1334961A provides a metal polishing liquid containing a metal oxide dissolving agent, a protective film forming agent and a dissolution aid of the protective film forming agent, wherein the dissolving aid of the protective agent forming agent is a polycarboxylate or ethylene.
  • a surfactant such as a base polymer, a sulfonic acid, a sulfonate or an amide.
  • the dissolution aid is used to improve the solubility properties of the protective film forming agent.
  • Chinese Patent CN101418187A provides a polishing solution in which a cationic surfactant (polyethyleneimine), a quaternary ammonium surfactant (cetyltrimethylammonium chloride) and a nonionic surfactant are added. (Polyethylene glycol), the removal rate of the barrier Ta/TaN can be lowered.
  • a cationic surfactant polyethyleneimine
  • a quaternary ammonium surfactant cetyltrimethylammonium chloride
  • nonionic surfactant Polyethylene glycol
  • the present invention is directed to a chemical mechanical polishing liquid which maintains high removal of copper by adding a combination of a benzene ring-free azole-based corrosion inhibitor and a sulfonate-based anionic surfactant to the polishing liquid.
  • the rate reduces the removal rate of the barrier layer, thereby improving the polishing ratio of the polishing solution to the copper and tantalum barrier layer, and improving the dishing and dielectric corrosion of the polished copper wire. And after polishing, there are no defects such as copper residue and corrosion.
  • an aspect of the present invention provides a chemical mechanical polishing polishing liquid comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, and at least one sulfonate anionic surfactant.
  • the sulfonate anionic surfactant is an alkyl sulfonate or an alkyl aryl sulfonate.
  • the alkyl sulfonate is a C10-C18 alkyl sulfonate
  • the alkyl aryl sulfonate is a C12-C18 alkylbenzene sulfonate having a degree of polymerization of 200 ⁇ . 600 polystyrene sulfonate, 4-vinyl benzene sulfonate and methylene dinaphthalene sulfonate, the salts being potassium and sodium salts.
  • the sulfonic acid anionic surfactant is contained in an amount of 0.001 to 0.5% by weight; preferably, the sulfonic acid anionic surfactant is contained in an amount of 0.005 to 0.1% by weight.
  • the abrasive particles are silica sols.
  • the abrasive particles have a particle diameter of 20 to 150 nm; preferably, the abrasive particles have a particle diameter of 50 to 120 nm.
  • the abrasive particles have a concentration of 0.05 to 2% by weight.
  • the abrasive particles have a concentration of from 0.1 to 1% by weight.
  • the complexing agent is an aminocarboxylate compound and a salt thereof.
  • the aminocarboxylate compound and its salt are glycine, alanine, valine, leucine, valine, phenylalanine, tyrosine, tryptophan, lysine, arginine , histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, ammonia triacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediamine disuccinic acid, diethylene One or more of triamine pentaacetic acid and triethylenetetramine hexaacetic acid.
  • the concentration of the complexing agent is 0.1 to 5 wt%; preferably, the concentration of the complexing agent is 0.5 to 3 wt%.
  • the corrosion inhibitor is one or more of a benzene ring-free azole compound.
  • the corrosion inhibitor concentration is 0.001 to 2% by weight; preferably, the corrosion inhibitor concentration is 0.005 to 1% by weight.
  • the oxidizing agent is hydrogen peroxide.
  • the concentration of the oxidizing agent is 0.05 to 5 wt%; preferably, the concentration of the oxidizing agent is 0.1 to 3 wt%.
  • the chemical mechanical polishing liquid has a pH of 5-8.
  • the polishing liquid further includes a pH adjuster, a viscosity modifier, and an antifoaming agent.
  • the polishing liquid may be prepared by concentration, diluted with deionized water at the time of use, and added with an oxidizing agent to the concentration range of the present invention.
  • Another aspect of the present invention is to provide an application of the above chemical mechanical polishing liquid in the polishing of metallic copper.
  • the invention adds a combination of a benzene ring-free azole-based corrosion inhibitor and a sulfonate-based anionic surfactant to the polishing liquid, maintains a high removal rate of copper, and reduces the removal rate of the ruthenium barrier layer.
  • the polishing of the wafer of the present invention can improve the dishing and dielectric corrosion of the polished copper wire, and has no defects such as copper residue and corrosion after polishing.
  • FIG. 1 is a topographical view of a dense line array region in which a copper wire width of a copper pattern chip polished in Comparative Example 1 is 5 ⁇ m and a dielectric material width is 1 ⁇ m;
  • Example 2 is a topographical view of a dense line array region having a copper line width of 5 ⁇ m and a dielectric material width of 1 ⁇ m in the copper pattern chip polished in Example 28.
  • Table 1 shows Examples 1 to 27 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, the components other than the oxidizing agent were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO 3 . Add oxidizing agent before use and mix well.
  • Table 2 shows Examples 28 to 37 and Comparative Examples 1 to 4 of the chemical mechanical polishing liquid of the present invention, according to the formulation given in the table, the components other than the oxidizing agent were uniformly mixed, and the mass percentage was made up to 100 with water. %. Adjust to the desired pH with KOH or HNO 3 .
  • the oxidizing agent is added before use, and the mixture is uniformly mixed, and the specific embodiment is as follows.
  • the copper (Cu) and tantalum (Ta) were polished with the comparative polishing liquid and the polishing liquids 28 to 37 of the present invention under the following conditions. Specific polishing conditions: pressure 1.5 psi and / or 2.0 psi; polishing disc and polishing head speed 73 / 67 rpm, polishing pad IC1010, polishing fluid flow rate 350ml / min, polishing machine is 12" Reflexion LK, polishing time is 1min.
  • the patterned copper wafer was polished using the comparative polishing liquid and the polishing liquid of the present invention under the following conditions. Polishing conditions: polishing disc and polishing head rotation speed 73/67 rpm, polishing pad IC1010, polishing liquid flow rate 350 ml/min, polishing machine table 12" Reflexion LK. Polished patterned copper wafer was polished on the polishing disc 1 with a pressure of 2 psi to The residual copper was about 3000 A, and then the residual copper was removed on the polishing disk 2 with a downward pressure of 1.5 psi. 5 um/1 um (copper wire/dielectric material line width) on the patterned copper wafer was measured with an XE-300P atomic force microscope. The dishing of the copper wire array area (Dishing) and dielectric layer erosion (Erosion), the results are shown in Table 3:
  • Table 3 compares the polishing effects of the polishing liquids 1 to 4 and the polishing liquids 28 to 37 of the present invention.
  • the surface topography of the dense line array region in which the copper wire width of the copper pattern chip polished in Comparative Example 1 and Example 28 is 5 micrometers and the dielectric material width is 1 micrometer is used.
  • Comparative Example 1 as a polishing liquid
  • the polished copper wire has 89.2 nm nano dish dishing and 57.5 nm dielectric layer etching; and using this Example 28 as a polishing liquid, polished copper
  • the wire dish type depression is reduced to 25 nm, and the dielectric layer erosion is reduced to 4.2 nm.
  • the polishing liquid of the present invention has a remarkable effect on the surface morphology of the polished surface, particularly the erosion of the dielectric layer.
  • Example 28 in combination with the components of Example 28 and Comparative Example 2, it was found that the combination of the azole ring corrosion inhibitor benzotriazole and the sulfonate anionic surfactant having a benzene ring was selected, although the ruthenium was lowered. The removal rate, but greatly reduced the copper removal rate, could not effectively remove copper.
  • Comparative Examples 3 and 4 were added using a combination of an azole corrosion inhibitor without a benzene ring and a sulfonate anionic surfactant, but the pH of Comparative Example 3 was too low, copper. The removal rate of yttrium and yttrium is also high, resulting in large dishing and dielectric layer erosion. The pH of Comparative Example 4 was too high, resulting in a greatly reduced copper removal rate and inability to effectively remove copper.
  • the present invention adds a combination of a benzene ring-free azole-based corrosion inhibitor and a sulfonate-based anionic surfactant to the polishing liquid, maintaining a high removal rate of copper and reducing the removal of the ruthenium barrier layer. Rate, the effect of improving the polishing selection ratio of the polishing liquid to the copper and tantalum barrier layer; the polishing of the wafer for the present invention can improve the dishing and dielectric corrosion of the polished copper wire, and polishing There are no copper residues and no defects such as corrosion.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une solution de polissage chimico-mécanique, comprenant des particules abrasives, un inhibiteur de corrosion, un agent complexant, un oxydant et au moins un tensioactif anionique sulfonate. La solution de polissage peut être utilisée pour polir un métal de cuivre. La présente invention améliore l'effet de la solution de polissage sur le rapport de sélection de polissage du cuivre sur une couche barrière au tantale et, lorsqu'il est utilisé pour le polissage de galettes, peut améliorer la corrosion de couche diélectrique et le bombage de fil de cuivre poli, sans défauts tels qu'un résidu de cuivre et la corrosion après polissage.
PCT/CN2017/094322 2016-12-28 2017-07-25 Solution de polissage chimico-mécanique et application associée WO2018120811A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201611231879.6A CN108250978A (zh) 2016-12-28 2016-12-28 一种化学机械抛光液及其应用
CN201611231879.6 2016-12-28

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CN114106706A (zh) * 2021-12-24 2022-03-01 博力思(天津)电子科技有限公司 具有压力缓冲作用的铜互连抛光液和其磨料的制备方法
CN118406439A (zh) * 2024-07-01 2024-07-30 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用

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CN109971353B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN111378378B (zh) * 2018-12-29 2023-09-08 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN111378376A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN110862772B (zh) * 2019-10-23 2021-04-20 宁波日晟新材料有限公司 一种不易结晶易清洗的高效硅溶胶抛光液及其制备方法
CN113122142B (zh) * 2019-12-31 2024-04-12 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN115537123B (zh) * 2022-11-09 2023-08-15 博力思(天津)电子科技有限公司 一种聚醚醚酮材料用化学机械抛光液

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CN101225282A (zh) * 2007-01-19 2008-07-23 安集微电子（上海）有限公司 一种低介电材料抛光液
CN102181232A (zh) * 2011-03-17 2011-09-14 清华大学 Ulsi多层铜布线铜的低下压力化学机械抛光的组合物
CN104745086A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法

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CN114106706A (zh) * 2021-12-24 2022-03-01 博力思(天津)电子科技有限公司 具有压力缓冲作用的铜互连抛光液和其磨料的制备方法
CN114106706B (zh) * 2021-12-24 2022-12-20 博力思(天津)电子科技有限公司 具有压力缓冲作用的铜互连抛光液和其磨料的制备方法
CN118406439A (zh) * 2024-07-01 2024-07-30 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用

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