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WO2018120362A1 - Oled基板及其制作方法 - Google Patents

Oled基板及其制作方法 Download PDF

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Publication number
WO2018120362A1
WO2018120362A1 PCT/CN2017/073537 CN2017073537W WO2018120362A1 WO 2018120362 A1 WO2018120362 A1 WO 2018120362A1 CN 2017073537 W CN2017073537 W CN 2017073537W WO 2018120362 A1 WO2018120362 A1 WO 2018120362A1
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substrate
oled
defining layer
pixel defining
silicon film
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PCT/CN2017/073537
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English (en)
French (fr)
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张晓星
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深圳市华星光电技术有限公司
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Priority to US15/508,099 priority Critical patent/US10305049B2/en
Publication of WO2018120362A1 publication Critical patent/WO2018120362A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED substrate and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the OLED panel technology based on printing technology has become a relatively advanced and novel technology, which uses an inkjet printing process to prepare an organic functional layer of an OLED device (including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and The electron injection layer can greatly improve the use efficiency of the OLED material, reduce the production cost of the OLED panel, and have the technical potential for preparing a flexible OLED panel. Therefore, large-scale research on this technology has become the development direction of the OLED display.
  • the fabrication process of a hydrophobic pixel defining layer plays a decisive role in the successful printing of subsequent OLED materials.
  • the function of the hydrophobic pixel defining layer is to define pixels and form red (R). , green (G), blue (B) pixel area, after The OLED material will be printed into these pixel regions.
  • the pixel defining layer needs to be absolutely hydrophobic, so that the OLED material does not stay at the top of the pixel defining layer even when flowing into the adjacent region. Causes color mixing in the pixel area.
  • the commonly used technical method is to add a hydrophobic substance to the common organic photoresist material to obtain a hydrophobic organic photoresist material, and then use the hydrophobic organic photoresist material to make a pixel definition.
  • the surface of the finally formed pixel defining layer has hydrophobic characteristics.
  • the method is complicated in process, and the surface hydrophobicity of the prepared pixel defining layer is often not ideal, which cannot effectively solve the problem that the OLED material stays at the top of the pixel defining layer when printing. Or cause a problem of color mixing.
  • Another object of the present invention is to provide an OLED substrate, which has high color purity and does not cause color mixing.
  • the present invention first provides a method for fabricating an OLED substrate, comprising the following steps:
  • Step 1 providing a substrate, forming a pixel defining layer on the substrate, wherein the pixel defining layer is provided with a plurality of through holes, and the plurality of through holes respectively define a plurality of holes on the substrate Pixel area
  • Step 2 depositing a silicon film on the pixel defining layer and the substrate, the silicon film including a portion covering a top surface of the pixel defining layer and a portion covering a plurality of via holes on the pixel defining layer ;
  • Step 3 performing a patterning process on the silicon film to remove a portion of the silicon film covering a plurality of via holes on the pixel defining layer, and retaining a top surface of the silicon film covering the pixel defining layer part;
  • Step 4 respectively, inkjet printing the OLED material in a plurality of pixel regions of the base substrate to form a plurality of OLED light emitting layers.
  • a silicon film is deposited by plasma enhanced chemical vapor deposition.
  • the material of the pixel defining layer is an organic photoresist, and the pixel defining layer has a thickness of 1 ⁇ m to 3 ⁇ m.
  • the material of the silicon film is amorphous silicon, and the thickness of the silicon film is
  • the surface of the plurality of pixel regions of the base substrate is hydrophilic, and the OLED material is Hydrophilic material.
  • the present invention also provides an OLED substrate, comprising: a substrate substrate, a pixel defining layer disposed on the substrate substrate, and a plurality of via holes disposed on the pixel defining layer, disposed on the pixel defining layer And a silicon film covering a top surface of the pixel defining layer and a plurality of OLED light emitting layers provided in the plurality of pixel regions respectively corresponding to the plurality of via holes on the substrate.
  • the base substrate is a TFT substrate.
  • the material of the pixel defining layer is an organic photoresist, and the pixel defining layer has a thickness of 1 ⁇ m to 3 ⁇ m.
  • the material of the silicon film is amorphous silicon, and the thickness of the silicon film is
  • the surface of the plurality of pixel regions of the base substrate is hydrophilic, and the OLED light-emitting layer is ink-jet printed using a hydrophilic OLED material.
  • the present invention also provides an OLED substrate, comprising: a substrate substrate, a pixel defining layer disposed on the substrate substrate, and a plurality of via holes disposed on the pixel defining layer, disposed on the pixel defining layer And a silicon film covering a top surface of the pixel defining layer, and a plurality of OLED light emitting layers disposed in the plurality of pixel regions respectively corresponding to the plurality of via holes on the substrate;
  • the base substrate is a TFT substrate
  • the material of the pixel defining layer is an organic photoresist, and the pixel defining layer has a thickness of 1 ⁇ m to 3 ⁇ m.
  • the present invention provides a method for fabricating an OLED substrate by providing a silicon film on a top surface of a pixel defining layer such that a top surface of the pixel defining layer has excellent hydrophobic properties, thereby being on a substrate
  • the OLED material is ink-jet printed in the pixel region
  • the OLED material accidentally sprayed onto the silicon film on the top surface of the pixel defining layer does not stay on the silicon film, but rapidly slides down into the pixel region of the substrate substrate, thereby effectively avoiding
  • the OLED material stays on the top surface of the pixel definition layer and even slides into adjacent pixel regions causing color mixing problems.
  • the OLED substrate provided by the invention has high color purity of the OLED luminescent layer, and no problem of color mixing occurs.
  • FIG. 1 is a flow chart of a method of fabricating an OLED substrate of the present invention
  • step 1 is a schematic view of step 1 of a method of fabricating an OLED substrate of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an OLED substrate of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an OLED substrate of the present invention.
  • FIG. 5 and FIG. 6 are schematic diagrams showing step 4 of the method for fabricating an OLED substrate of the present invention
  • FIG. 6 is a schematic structural view of the OLED substrate of the present invention.
  • the present invention provides a method for fabricating an OLED substrate, including the following steps:
  • Step 1 as shown in FIG. 2, a substrate substrate 10 is provided, and a pixel defining layer 20 is formed on the substrate substrate 10.
  • the pixel defining layer 20 is provided with a plurality of through holes 21, and the plurality of through holes 21 are provided.
  • a plurality of pixel regions 11 are defined on the base substrate 10, respectively.
  • the base substrate 10 is a TFT substrate.
  • the material of the pixel defining layer 20 is a common organic photoresist, and the common organic photoresist material has a certain hydrophobicity, but the hydrophobic property is poor, which is insufficient to meet the requirements of inkjet printing.
  • the pixel defining layer 20 has a thickness of 1 ⁇ m to 3 ⁇ m.
  • the surfaces of the plurality of pixel regions 11 of the base substrate 10 are hydrophilic.
  • Step 2 depositing a silicon film 30 on the pixel defining layer 20 and the base substrate 10, the silicon film 30 including a portion covering a top surface of the pixel defining layer 20 and cladding the The pixel defines a portion of the plurality of vias 21 on the layer 20.
  • the silicon film 30 is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the material of the silicon film 30 is amorphous silicon.
  • the thickness of the silicon film 30 is
  • Step 3 as shown in FIG. 4, the silicon film 30 is patterned to remove portions of the silicon film 30 that cover the plurality of via holes 21 on the pixel defining layer 20, and the silicon film is retained. A portion of the top surface of the pixel defining layer 20 is overlaid 30.
  • the silicon film 30 is patterned by a photolithography process.
  • Step 4 as shown in FIG. 5 and FIG. 6, the OLED materials are respectively ink-jet printed in a plurality of pixel regions 11 of the base substrate 10 to form a plurality of OLED light-emitting layers 40.
  • the OLED light-emitting layer 40 includes a hole injection layer (not shown) provided on the base substrate 10, a hole transport layer (not shown) provided on the hole injection layer, and is provided in the hole.
  • Transport layer An upper light-emitting layer (not shown), an electron transport layer (not shown) provided on the light-emitting layer, and an electron injection layer (not shown) provided on the electron transport layer.
  • the OLED material is a hydrophilic material.
  • the OLED material may be incompletely aligned during inkjet printing, that is, a small amount of OLED material may be printed on the silicon film 30 located at the edge of the through hole 21, but Since the surface of the silicon film 30 has excellent hydrophobic properties, the OLED material accidentally sprayed onto the silicon film 30 at the edge of the via hole 21 does not stay on the silicon film 30, but rapidly flows into the pixel region 11.
  • the top surface of the pixel defining layer 20 has excellent hydrophobic characteristics, thereby ink-jet printing in the pixel region 11 of the base substrate 10.
  • the OLED material accidentally sprayed onto the silicon film 30 on the top surface of the pixel defining layer 20 does not stay on the silicon film 30, but rapidly slides down into the pixel region 11 of the base substrate 10, thereby being effective
  • the problem that the OLED material stays on the top surface of the pixel defining layer 20 or even slides into the adjacent pixel region 11 causes color mixing.
  • the present invention further provides an OLED substrate, including: a substrate substrate 10 , a pixel defining layer 20 disposed on the substrate substrate 10 , and the pixel definition a plurality of through holes 21 on the layer 20, a silicon film 30 disposed on the pixel defining layer 20 and covering a top surface of the pixel defining layer 20, and a plurality of through holes respectively disposed on the substrate substrate 10 A plurality of OLED light-emitting layers 40 of the plurality of pixel regions 11 of the holes 21.
  • the base substrate 10 is a TFT substrate.
  • the surface of the plurality of pixel regions 11 of the base substrate 10 is hydrophilic, and the OLED light emitting layer 40 is inkjet printed using a hydrophilic OLED material.
  • the material of the pixel defining layer 20 is a common organic photoresist.
  • the pixel defining layer 20 has a thickness of 1 ⁇ m to 3 ⁇ m.
  • the material of the silicon film 30 is amorphous silicon.
  • the thickness of the silicon film 30 is
  • the OLED light-emitting layer 40 includes a hole injection layer (not shown) provided on the base substrate 10, a hole transport layer (not shown) provided on the hole injection layer, and is provided in the hole.
  • the top surface of the pixel defining layer 20 has excellent hydrophobic characteristics, so that the OLED material can be effectively avoided in the inkjet printing process of the OLED light emitting layer 40.
  • Staying on the top surface of the pixel defining layer 20 even sliding into the adjacent pixel region 11 causes a problem of color mixing, and thus the OLED substrate of the present invention Among them, the color purity of the OLED light-emitting layer 40 is high, and the problem of color mixing does not occur.
  • the present invention provides an OLED substrate and a method of fabricating the same.
  • the method for fabricating the OLED substrate of the present invention by providing a silicon film on the top surface of the pixel defining layer, the top surface of the pixel defining layer has excellent hydrophobic properties, thereby ink-jet printing the OLED material in the pixel region of the substrate substrate.
  • the OLED material accidentally sprayed onto the silicon film on the top surface of the pixel defining layer does not stay on the silicon film, but rapidly slides down into the pixel region of the substrate substrate, thereby effectively preventing the OLED material from being on the top surface of the pixel defining layer.
  • the problem of mixing is caused by staying on or even sliding into adjacent pixel areas.
  • the color purity of the OLED light-emitting layer is high, and the problem of color mixing does not occur.

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  • Manufacturing & Machinery (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种OLED基板及其制作方法。本发明的OLED基板的制作方法，通过在像素定义层的顶表面上设置硅膜，使得像素定义层的顶表面具有优异的疏水特性，从而在衬底基板的像素区域内喷墨打印OLED材料时，误喷到像素定义层的顶表面的硅膜上的OLED材料不会在硅膜上停留，而是迅速滑落至衬底基板的像素区域内，从而有效避免OLED材料在像素定义层的顶表面上停留甚至滑入相邻的像素区域中造成混色的问题。本发明的OLED基板，OLED发光层的色纯度高，不会出现混色的问题。

Description

OLED基板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED基板及其制作方法。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
基于打印技术的OLED面板技术成为目前比较先进且新颖的技术，该技术采用喷墨打印工艺来制备OLED器件的有机功能层(包括空穴注入层、空穴传输层、发光层、电子传输层及电子注入层)，可以大大提高OLED材料的使用效率，降低OLED面板的生产成本，同时具有制备柔性OLED面板的技术潜力，所以对此技术的大规模研究成为OLED显示器的发展方向。
在打印OLED材料的过程中，有一道疏水像素定义层(bank)的制作工艺对后续OLED材料的成功打印起到决定性的作用，此疏水像素定义层的作用是进行像素定义，形成红(R)、绿(G)、蓝(B)像素区域，之后 OLED材料会打印到这些像素区域中，为了使OLED材料能够100％进入像素区域中，此像素定义层需要表面绝对疏水，这样OLED材料打印时才不会停留在像素定义层的顶部甚至流入相邻的像素区域中造成混色。为实现像素定义层的表面绝对疏水效果，目前常用的技术手段是在普通有机光阻材料中添加疏水性物质，得到疏水性有机光阻材料，之后采用该疏水性有机光阻材料来制作像素定义层，最后制得的像素定义层的表面具有疏水特性，然而该方法工艺复杂，且制得的像素定义层的表面疏水性往往不够理想，不能有效解决OLED材料打印时在像素定义层的顶部停留或者造成混色的问题。
发明内容
本发明的目的在于提供一种OLED基板的制作方法，能够避免喷墨打印过程中OLED材料在像素定义层的顶表面上停留甚至滑入相邻的像素区域中造成混色的问题。
本发明的目的还在于提供一种OLED基板，OLED发光层的色纯度高，不会出现混色的问题。
为实现上述目的，本发明首先提供一种OLED基板的制作方法，包括如下步骤：
步骤1、提供衬底基板，在所述衬底基板上形成像素定义层，所述像素定义层上设有数个通孔，所述数个通孔在所述衬底基板上分别限定出数个像素区域；
步骤2、在所述像素定义层与衬底基板上沉积硅膜，所述硅膜包括覆盖所述像素定义层的顶表面的部分以及包覆所述像素定义层上的数个通孔的部分；
步骤3、对所述硅膜进行图形化处理，去除所述硅膜上包覆所述像素定义层上的数个通孔的部分，保留所述硅膜上覆盖所述像素定义层的顶表面的部分；
步骤4、在所述衬底基板的数个像素区域内分别喷墨打印OLED材料，形成数个OLED发光层。
所述步骤2中，采用等离子体增强化学气相沉积法沉积硅膜。
所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
所述硅膜的材料为非晶硅，所述硅膜的厚度为
Figure PCTCN2017073537-appb-000001
所述衬底基板的数个像素区域的表面具有亲水性，所述OLED材料为 亲水性材料。
本发明还提供一种OLED基板，包括：衬底基板、设于所述衬底基板上的像素定义层、设于所述像素定义层上的数个通孔、设于所述像素定义层上且覆盖所述像素定义层的顶表面的硅膜、以及设于所述衬底基板上分别对应数个通孔的数个像素区域中的数个OLED发光层。
所述衬底基板为TFT基板。
所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
所述硅膜的材料为非晶硅，所述硅膜的厚度为
Figure PCTCN2017073537-appb-000002
所述衬底基板的数个像素区域的表面具有亲水性，所述OLED发光层采用具有亲水性的OLED材料喷墨打印而成。
本发明还提供一种OLED基板，包括：衬底基板、设于所述衬底基板上的像素定义层、设于所述像素定义层上的数个通孔、设于所述像素定义层上且覆盖所述像素定义层的顶表面的硅膜、以及设于所述衬底基板上分别对应数个通孔的数个像素区域中的数个OLED发光层；
其中，所述衬底基板为TFT基板；
其中，所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
本发明的有益效果：本发明提供的一种OLED基板的制作方法，通过在像素定义层的顶表面上设置硅膜，使得像素定义层的顶表面具有优异的疏水特性，从而在衬底基板的像素区域内喷墨打印OLED材料时，误喷到像素定义层的顶表面的硅膜上的OLED材料不会在硅膜上停留，而是迅速滑落至衬底基板的像素区域内，从而有效避免OLED材料在像素定义层的顶表面上停留甚至滑入相邻的像素区域中造成混色的问题。本发明提供的一种OLED基板，OLED发光层的色纯度高，不会出现混色的问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED基板的制作方法的流程图；
图2为本发明的OLED基板的制作方法的步骤1的示意图；
图3为本发明的OLED基板的制作方法的步骤2的示意图；
图4为本发明的OLED基板的制作方法的步骤3的示意图；
图5与图6为本发明的OLED基板的制作方法的步骤4的示意图且图6为本发明的OLED基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种OLED基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供衬底基板10，在所述衬底基板10上形成像素定义层20，所述像素定义层20上设有数个通孔21，所述数个通孔21在所述衬底基板10上分别限定出数个像素区域11。
具体的，所述衬底基板10为TFT基板。
具体的，所述像素定义层20的材料为普通有机光阻，所述普通有机光阻材料具有一定的疏水性，但是疏水性能较差，不足以满足喷墨打印的要求。
具体的，所述像素定义层20的厚度为1μm-3μm。
具体的，所述衬底基板10的数个像素区域11的表面具有亲水性。
步骤2、如图3所示，在所述像素定义层20与衬底基板10上沉积硅膜30，所述硅膜30包括覆盖所述像素定义层20的顶表面的部分以及包覆所述像素定义层20上的数个通孔21的部分。
具体的，所述步骤2中，采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)沉积硅膜30。
具体的，所述硅膜30的材料为非晶硅。
具体的，所述硅膜30的厚度为
Figure PCTCN2017073537-appb-000003
步骤3、如图4所示，对所述硅膜30进行图形化处理，去除所述硅膜30上包覆所述像素定义层20上的数个通孔21的部分，保留所述硅膜30上覆盖所述像素定义层20的顶表面的部分。
具体的，所述步骤3中，采用光刻制程对所述硅膜30进行图形化处理。
步骤4、如图5与图6所示，在所述衬底基板10的数个像素区域11内分别喷墨打印OLED材料，形成数个OLED发光层40。
具体的，所述OLED发光层40包括设于衬底基板10上的空穴注入层(未图示)、设于空穴注入层上的空穴传输层(未图示)、设于空穴传输层 上的发光层(未图示)、设于发光层上的电子传输层(未图示)、以及设于电子传输层上的电子注入层(未图示)。
具体的，所述OLED材料为亲水性材料。
具体的，所述步骤4中，OLED材料在喷墨打印的过程中可能会出现不完全对准的情况，即可能会有少量OLED材料被打印到位于通孔21边缘的硅膜30上，但是，由于所述硅膜30的表面具有优异的疏水特性，使得误喷到通孔21边缘的硅膜30上的OLED材料不会在硅膜30上停留，而是迅速流入像素区域11中。
上述OLED基板的制作方法，通过在像素定义层20的顶表面上设置硅膜30，使得像素定义层20的顶表面具有优异的疏水特性，从而在衬底基板10的像素区域11内喷墨打印OLED材料时，误喷到所述像素定义层20的顶表面的硅膜30上的OLED材料不会在硅膜30上停留，而是迅速滑落至衬底基板10的像素区域11内，从而有效避免OLED材料在像素定义层20的顶表面上停留甚至滑入相邻的像素区域11中造成混色的问题。
请参阅图6，基于上述OLED基板的制作方法，本发明还提供一种OLED基板，包括：衬底基板10、设于所述衬底基板10上的像素定义层20、设于所述像素定义层20上的数个通孔21、设于所述像素定义层20上且覆盖所述像素定义层20的顶表面的硅膜30、以及设于所述衬底基板10上分别对应数个通孔21的数个像素区域11中的数个OLED发光层40。
具体的，所述衬底基板10为TFT基板。
具体的，所述衬底基板10的数个像素区域11的表面具有亲水性，所述OLED发光层40采用具有亲水性的OLED材料喷墨打印而成。
具体的，所述像素定义层20的材料为普通有机光阻。
具体的，所述像素定义层20的厚度为1μm-3μm。
具体的，所述硅膜30的材料为非晶硅。
具体的，所述硅膜30的厚度为
Figure PCTCN2017073537-appb-000004
具体的，所述OLED发光层40包括设于衬底基板10上的空穴注入层(未图示)、设于空穴注入层上的空穴传输层(未图示)、设于空穴传输层上的发光层(未图示)、设于发光层上的电子传输层(未图示)、以及设于电子传输层上的电子注入层(未图示)。
上述OLED基板，通过在像素定义层20的顶表面上设置硅膜30，使得像素定义层20的顶表面具有优异的疏水特性，因此在OLED发光层40的喷墨打印过程中可有效避免OLED材料在像素定义层20的顶表面上停留甚至滑入相邻的像素区域11中造成混色的问题，因此本发明的OLED基板 中，OLED发光层40的色纯度高，不会出现混色的问题。
综上所述，本发明提供一种OLED基板及其制作方法。本发明的OLED基板的制作方法，通过在像素定义层的顶表面上设置硅膜，使得像素定义层的顶表面具有优异的疏水特性，从而在衬底基板的像素区域内喷墨打印OLED材料时，误喷到像素定义层的顶表面的硅膜上的OLED材料不会在硅膜上停留，而是迅速滑落至衬底基板的像素区域内，从而有效避免OLED材料在像素定义层的顶表面上停留甚至滑入相邻的像素区域中造成混色的问题。本发明的OLED基板，OLED发光层的色纯度高，不会出现混色的问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED基板的制作方法，包括如下步骤：
    步骤1、提供衬底基板，在所述衬底基板上形成像素定义层，所述像素定义层上设有数个通孔，所述数个通孔在所述衬底基板上分别限定出数个像素区域；
    步骤2、在所述像素定义层与衬底基板上沉积硅膜，所述硅膜包括覆盖所述像素定义层的顶表面的部分以及包覆所述像素定义层上的数个通孔的部分；
    步骤3、对所述硅膜进行图形化处理，去除所述硅膜上包覆所述像素定义层上的数个通孔的部分，保留所述硅膜上覆盖所述像素定义层的顶表面的部分；
    步骤4、在所述衬底基板的数个像素区域内分别喷墨打印OLED材料，形成数个OLED发光层。
  2. 如权利要求1所述的OLED基板的制作方法，其中，所述步骤2中，采用等离子体增强化学气相沉积法沉积硅膜。
  3. 如权利要求1所述的OLED基板的制作方法，其中，所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
  4. 如权利要求1所述的OLED基板的制作方法，其中，所述硅膜的材料为非晶硅，所述硅膜的厚度为
    Figure PCTCN2017073537-appb-100001
  5. 如权利要求1所述的OLED基板的制作方法，其中，所述衬底基板的数个像素区域的表面具有亲水性，所述OLED材料为亲水性材料。
  6. 一种OLED基板，包括：衬底基板、设于所述衬底基板上的像素定义层、设于所述像素定义层上的数个通孔、设于所述像素定义层上且覆盖所述像素定义层的顶表面的硅膜、以及设于所述衬底基板上分别对应数个通孔的数个像素区域中的数个OLED发光层。
  7. 如权利要求6所述的OLED基板，其中，所述衬底基板为TFT基板。
  8. 如权利要求6所述的OLED基板，其中，所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
  9. 如权利要求6所述的OLED基板，其中，所述硅膜的材料为非晶硅，所述硅膜的厚度为
    Figure PCTCN2017073537-appb-100002
  10. 如权利要求6所述的OLED基板，其中，所述衬底基板的数个像 素区域的表面具有亲水性，所述OLED发光层采用具有亲水性的OLED材料喷墨打印而成。
  11. 一种OLED基板，包括：衬底基板、设于所述衬底基板上的像素定义层、设于所述像素定义层上的数个通孔、设于所述像素定义层上且覆盖所述像素定义层的顶表面的硅膜、以及设于所述衬底基板上分别对应数个通孔的数个像素区域中的数个OLED发光层；
    其中，所述衬底基板为TFT基板；
    其中，所述像素定义层的材料为有机光阻，所述像素定义层的厚度为1μm-3μm。
  12. 如权利要求11所述的OLED基板，其中，所述硅膜的材料为非晶硅，所述硅膜的厚度为
    Figure PCTCN2017073537-appb-100003
  13. 如权利要求11所述的OLED基板，其中，所述衬底基板的数个像素区域的表面具有亲水性，所述OLED发光层采用具有亲水性的OLED材料喷墨打印而成。
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