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WO2018106039A1 - Dispositif de dépôt chimique en phase vapeur organométallique - Google Patents

Dispositif de dépôt chimique en phase vapeur organométallique Download PDF

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Publication number
WO2018106039A1
WO2018106039A1 PCT/KR2017/014312 KR2017014312W WO2018106039A1 WO 2018106039 A1 WO2018106039 A1 WO 2018106039A1 KR 2017014312 W KR2017014312 W KR 2017014312W WO 2018106039 A1 WO2018106039 A1 WO 2018106039A1
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WO
WIPO (PCT)
Prior art keywords
substrate
vapor deposition
chemical vapor
protrusion
groove
Prior art date
Application number
PCT/KR2017/014312
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English (en)
Korean (ko)
Inventor
조광일
최성철
Original Assignee
주식회사 테스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테스 filed Critical 주식회사 테스
Priority to CN201780076172.9A priority Critical patent/CN110088356A/zh
Priority claimed from KR1020170167443A external-priority patent/KR102154482B1/ko
Publication of WO2018106039A1 publication Critical patent/WO2018106039A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Definitions

  • the present invention relates to an organometallic chemical vapor deposition apparatus.
  • the Metal Organic Chemical Vapor Deposition (MOCVD) apparatus is a thermal decomposition method on a heated substrate by supplying a Group 3 alkyl (organic metal raw material gas) and a mixed gas of a Group 5 reaction gas and a high purity carrier gas into the reaction chamber. To grow a compound semiconductor crystal.
  • the organometallic chemical vapor deposition apparatus mounts a substrate on a susceptor and injects gas from an upper surface or a side surface to grow semiconductor crystals on the substrate.
  • a process gas is disposed between the substrate W and the bottom of the accommodation groove 4 while the substrate W is seated in the accommodation groove 4 of the susceptor 2.
  • foreign substances such as particles 6 may be formed.
  • the particles 6 do not allow the wafers W to be placed in parallel. As shown in the figure, it is inclined. This acts as a factor of yield reduction when growing the thin film by generating a temperature deviation on the wafer (W) surface.
  • AlN aluminum nitride
  • AlN aluminum nitride
  • TMA trimethylaluminum
  • Al aluminum
  • N nitrogen
  • turbulence due to gas flow may occur, which may inadvertently rotate a substrate having a concave shape warp at a high temperature. This leads to a problem that it is not easy to analyze the thin film characteristics in the substrate after the growth ends.
  • a substrate having a flat surface is used instead of a general circular substrate. In this case, pinching may occur when the substrate is rotated.
  • the flat surface Wf of the substrate W and the substrate W are rotated.
  • the above-described pinching phenomenon may be intensified, and in severe cases, the substrate W may be damaged or the susceptor may be broken.
  • the present invention in order to solve the above problems, when the substrate is seated in the receiving groove of the substrate support, the organic metal that can prevent the substrate is inclined due to the particles that can be formed in the receiving groove, etc.
  • An object is to provide a chemical vapor deposition apparatus.
  • the present invention in order to solve the above problems, when the substrate is seated in the receiving groove of the substrate support to prevent the rotation of the substrate to prevent the metal from being caught or damaged in the receiving groove of the organometallic chemistry It is an object to provide a vapor deposition apparatus.
  • An object of the present invention as described above is provided with a chamber that provides a processing space in which a substrate is processed, a gas supply unit for supplying a process gas into the chamber, and an accommodation groove provided in the chamber to seat the substrate and the substrate And a substrate supporting part for heating the substrate, wherein an organic metal chemical vapor deposition apparatus is provided with a seating part in which the substrate is seated inside the receiving groove, and an intermediate groove is formed between an edge of the seating portion and the receiving groove. Is achieved.
  • the seating portion may be formed flat on the upper surface.
  • the width of the intermediate groove may be covered by 60% to 95% by the substrate.
  • the intermediate groove may be formed in an angled corner of the inside.
  • the width of the intermediate groove may be 1 to 3mm.
  • the depth of the intermediate groove on the upper surface of the seating portion may be 40 to 80% of the depth of the intermediate groove on the upper surface of the substrate support.
  • the substrate may have a flat surface at least partially along a circular circumferential surface, and may include a protrusion that protrudes inwardly from an edge of the receiving groove to prevent rotation of the substrate.
  • the flat surface of the substrate may meet the protrusion.
  • the corner region where the circumferential surface and the flat surface of the substrate meet does not meet the protrusion.
  • the circumferential angle of the protrusion relative to the center of the seating portion may be relatively smaller than the circumferential angle of the flat surface of the substrate with respect to the center of the seating portion.
  • the protrusion may be detachably provided.
  • the substrate support portion includes a heater block on which the substrate is seated and heated, the insertion groove is formed from the bottom of the heater block toward the upper portion, the inside of the insertion groove is provided with a thermocouple for measuring the temperature of the heater block Can be.
  • the height of the insertion groove in the bottom of the heater block may be 60 to 90% of the height of the heater block.
  • the present invention having the above-described configuration, by forming an intermediate groove between the seating portion in which the substrate is seated in the receiving groove of the substrate support and the inner surface of the receiving groove to induce foreign matter such as particles to be formed in the intermediate groove, When disposed in the receiving groove can be prevented from being disposed inclined.
  • FIG. 1 is a cross-sectional view showing the structure of an organometallic chemical vapor deposition apparatus according to an embodiment of the present invention
  • 4 to 8 is a plan view showing various embodiments of the protrusion formed in the receiving groove of the substrate support
  • FIG. 11 is a plan view of a substrate support of the conventional apparatus.
  • FIG. 1 is a cross-sectional view showing the structure of an organometallic chemical vapor deposition apparatus 1000 according to an embodiment of the present invention.
  • the organometallic chemical vapor deposition apparatus 1000 includes a chamber 10, a substrate support 20, a gas supply unit 30, and a reaction space forming unit 40.
  • the chamber 10 includes a chamber lead 11 covering an upper portion of the chamber, an outer wall portion 12 fastened to the chamber lead 11 and covering a side of the chamber, and a bottom flange portion forming a lower bottom surface of the chamber. (13) is provided.
  • the chamber lead 11 may be detachably fastened to the outer wall portion 12 through fastening means such as bolts, and the cooling chamber 11a may be formed in the chamber lead 11.
  • the cooling passage 11a is configured to flow a cooling medium such as a cooling water or a cooling gas, and is configured to cool the chamber 10 heated by the high temperature heat generated in the deposition process in the chamber 10.
  • the chamber lead 11 includes a sensor tube 52 serving as an optical measuring passage of the optical sensor 51 for optically measuring a thin film deposited on a substrate in the reaction space forming unit 40 to be described later. It is installed.
  • the sensor tube 52 is configured to introduce a purge gas to prevent the reaction gas from being discharged from the reaction space forming unit 40 to the sensor tube 52.
  • the outer wall portion 12 is fastened to the chamber lead 11 and is configured to cover the side of the chamber 10.
  • An exhaust hole 14 is formed in the outer wall part 12, and the exhaust hole 14 is connected to a gas exhaust line (not shown), and remains in the reaction space forming unit 40 after completion of the deposition process. It is configured to discharge the reaction gas to the outside of the chamber 10 through the exhaust hole 14 and the gas exhaust line (not shown).
  • an inner wall portion 12a may be further provided inside the outer wall portion 12.
  • the reaction space forming unit 40 is inserted into and installed in the inner wall portion 12a, and the reaction space forming unit 40 is configured to be stably installed.
  • the bottom flange 13 is provided below the chamber 10.
  • a cooling passage 13a may be formed in the bottom flange portion 13.
  • the cooling channel 13a is configured to flow a cooling medium such as a cooling water or a cooling gas, and is configured to cool the chamber 10 heated by the high temperature heat generated in the deposition process in the chamber 10.
  • the substrate support 20 on which the substrate W is seated is disposed in the chamber.
  • the substrate support unit 20 includes a heater block 21 on which the substrate W is seated and heated, a shaft 22 supporting and rotating the heater block 21, a sealing unit 23, and the heater.
  • Induction heating unit 24 for heating the block 21 is included.
  • the heater block 21 is provided with a plurality of receiving grooves 210, 220, and 230 (see FIG. 2) so that the plurality of substrates W may be seated on the upper surface.
  • thermocouple 22a is installed inside the shaft 22 to measure and control the temperature of the heater block 21 heated by the induction heating unit 24. The configuration in which the thermocouple 22a is disposed inside the heater block 21 will be described in detail later.
  • a sealing portion 23 is provided between the shaft 22 and the bottom flange portion 13 of the chamber 10 to seal a space between the rotating shaft 22 and the bottom flange portion 13. It is composed.
  • the sealing portion 23 is filled with a fluid seal, in the present embodiment, the fluid seal may be composed of a magnetic fluid seal to hermetically seal the voids with the outside by the magnetic force of the magnetic.
  • an upper portion of the sealing portion 23 surrounds the shaft 22 to prevent high temperature heat generated during the deposition process from being transferred to the chamber 10 and the sealing portion 23 ( 26) can be installed.
  • the induction heating unit 24 is formed of, for example, an induction coil surrounding the heater block 21, and is configured to heat the heater block 21 disposed inside the induction heating unit 24. do.
  • a thermal barrier 25 may be provided between the induction heating unit 24 and the heater block 21. The thermal barrier 25 not only prevents the high temperature heat of the heater block 21 heated by the induction heating unit 24 from being transferred into the chamber 10 but also the induction heating unit 24. In addition, the heater block 21 may be protected from high temperature heat.
  • the thermal barrier 25 may be formed of, for example, a ceramic material which is stable at high temperature and has high heat reflectivity.
  • the gas supply unit 30 is installed on one side of the chamber.
  • the gas supply unit 30 includes a plurality of gas supply ports (not shown) connected to a plurality of gas supply lines (not shown), and the plurality of gas supply lines process a plurality of gas supply sources (not shown). Gas is supplied.
  • the organometallic chemical vapor deposition apparatus 1000 includes a reaction space forming unit 40 installed inside the chamber 10.
  • the reaction space forming unit 40 includes an upper plate 41 installed at a side corresponding to the chamber lead, a side plate (not shown), and a lower plate 43 installed at a side corresponding to the substrate support. The side in which the reaction gas is supplied to the reaction space forming unit and the side in communication with the exhaust hole are opened.
  • One side of the reaction space forming unit 40 is coupled to the gas supply unit 30 through the inner wall portion of the chamber 10, the other side is configured to communicate with the exhaust hole 14 formed in the outer wall portion 12 do.
  • a heat shielding lead 44 may be installed on the upper plate 41 of the reaction space forming unit.
  • the heat shield 44 is installed at a position opposite to the heater block 21, is thicker than the upper plate, protrudes toward an upper surface of the heater block 21, and is seated on the heater block 21.
  • the reaction space on the substrate W can be made smaller.
  • the heat shield lead 44 is integrally fastened with the upper plate 41, and is detachably configured with the upper plate 41 to facilitate replacement.
  • the heat shield 44 may be formed of, for example, a ceramic material that is stable at high temperature and has high heat reflectivity.
  • the thermal barrier 25 surrounding the heater block 21 and the heat shield lead 44 are stably constructed at high temperature by using a ceramic material. .
  • the thermally sealed lid 44 having a high heat reflectivity can efficiently heat the substrate and reduce power consumption required for heating the substrate.
  • the organometallic chemical vapor deposition apparatus prevents the substrate from being inclined due to particles that may be formed in the receiving groove when the substrate is seated in the receiving groove of the substrate support. Configured to do so.
  • FIG. 2 is a plan view of the heater block 21, and FIG. 3 is a partial cross-sectional view of the heater block 21.
  • FIG. 3 (A) shows the receiving groove 210
  • Figure 3 (B) shows a state in which the substrate (W) is seated in the receiving groove (210).
  • the organometallic chemical vapor deposition apparatus 1000 includes accommodation grooves 210, 220, and 230 in which the substrate W is accommodated in the heater block 21.
  • the accommodation grooves 210, 220, 230 are shown in the figure three, but is not limited to this may be appropriately adjusted.
  • An intermediate groove 213 may be formed between the 210, 220, and 230.
  • the substrate W is seated on an upper surface of the seating portions 212, 222, and 232, which protrude to a predetermined length toward the inside of the accommodation grooves 210, 220, and 230, and in this case, the substrate ( The intermediate groove 213 is positioned under the edge region of W).
  • the seating portions 212, 222, and 232 have upper surfaces formed flat and the lower surface of the substrate W when the substrate W is seated on the upper surfaces of the mounting portions 212, 222, and 232. And a space between the upper surfaces of the seating parts 212, 222, and 232 does not occur. Since no space is generated between the substrate W and the seating portions 212, 222, and 232, foreign substances, such as particles and powder, may be prevented from being introduced into the process gas.
  • the intermediate groove 213 may be formed in an angled corner of the inside as shown in the figure.
  • the side cross-section of the intermediate groove 213 is formed in an angular shape in a polygonal shape, such as a square, it is very easy to form a groove having a relatively small width compared to the simple round shape without the angular shape.
  • the square angled shape has a relatively large surface area inside the intermediate groove 213 as compared to the round shape, the particles are well attached to prevent the particles from leaking to the outside of the intermediate groove 213.
  • the above-described angled edge portion of the intermediate groove 213 may also be expected to hinder the movement of the particles.
  • the edge of the substrate (W) is disposed to be as close as possible to the receiving groove (210, 220, 230). That is, the inner diameters of the receiving grooves 210, 220, and 230 are determined to be slightly larger than the outer diameter of the substrate W. In this case, as shown in the drawing, the edge of the substrate W is the intermediate diameter. Most of the width D of the groove 213 is covered.
  • the substrate W may cover 50% or more of the width D of the intermediate groove 213.
  • the substrate W may have a width D of the intermediate groove 213. 60% to 95% can be covered. When most of the width D of the intermediate groove 213 is covered by the substrate W, the amount of process gas flowing into the intermediate groove 213 may be reduced, thereby suppressing particle generation.
  • the width (D) of the intermediate groove 213, or the distance between the edge of the seating portion (212, 222, 232) and the inner surface of the receiving groove (210, 220, 230) ( D) may be approximately 1-3 mm and approximately 2 mm.
  • the depth of the middle groove 213 is the depth and (B 1) to the bottom of the intermediate groove (213) on the top surface (21a) of the heater block (21) constituting the substrate support 20, mounted It may be defined as the depth B 2 from the upper surface of the portion (212, 222, 232) to the bottom of the intermediate groove 213.
  • Depth (B 2 ) to the bottom of the can be made of approximately 40 to 80%.
  • the organometallic chemical vapor deposition apparatus is configured to prevent the substrate from being pinched or damaged by the rotation of the substrate when the substrate is seated in the receiving groove of the substrate support. .
  • the substrate look at in detail.
  • 4 to 8 are plan views illustrating various embodiments of protrusions formed in the accommodation grooves 310 of the substrate support 20. That is, in the present embodiment, the substrate W protrudes inward from the edge of the accommodation groove 310 to prevent the substrate W from rotating inside the accommodation groove 310 to prevent rotation of the substrate W. It is provided with a protrusion.
  • the substrate W has a flat surface Wf at least in part along a circular circumferential surface Ws, and a corner at an area where the circumferential surface Ws and the flat surface Wf of the substrate meet.
  • the region Wc may be formed. 4 to 8, (a) is a plan view of the receiving groove 310, and (b) is an enlarged view of the dotted line area in (a).
  • the protrusion 314 protrudes inward from an edge of the receiving groove 310.
  • the flat surface Wf may be formed on at least a portion of the substrate W along the circumference, and the protrusion 314 may be disposed to meet the flat surface Wf.
  • the corner region of the substrate meets the edge of the receiving groove so that the corner region of the substrate is pinched in the receiving groove.
  • the protrusion 314 is used to solve the above-mentioned problem.
  • substrate W is arrange
  • the circumferential angle ⁇ 2 of the protrusion 314 with respect to the center C of the seating portion 312 is the seating portion ( It is formed relatively smaller than the circumferential angle ⁇ 1 of the flat surface Wf of the substrate W with respect to the center C of 312.
  • the corner area Wc of the substrate W and the protrusion 314 may not be prevented from meeting. In this case, as described above, the corner region Wc of the substrate W may be caught in the protrusion 314.
  • the degree ⁇ 2 is formed to be relatively smaller than the circumferential angle ⁇ 1 of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312.
  • the organometallic chemical vapor deposition apparatus 1000 is supplied with a process gas from the side of the substrate (W).
  • the substrate W does not rotate.
  • the substrate W is Can rotate
  • the gas injection speed of the process gas is increased to suppress parasitic reactions between the process gases, the substrate W is more easily rotated.
  • the flat surface Wf is used instead of the corner region Wc of the substrate W.
  • At least a portion of the substrate 314 may meet the protrusion 314 to prevent rotation of the substrate W as much as possible, and may further prevent the corner region Wc of the substrate W from being caught in the protrusion 314.
  • the corner region Wc where the circumferential surface Ws of the substrate W and the flat surface Wf meet is vulnerable to damage or damage.
  • the corner region Wc is the protruding portion 314.
  • the protrusion 314 may be disposed so as not to contact the substrate 314 so as to prevent damage or damage to the substrate W as much as possible.
  • the width of the intermediate groove 213 or the distance between the edge of the seating portion 312 and the inner surface of the receiving groove 310 is changed by the protrusion 314.
  • the width d 2 of the intermediate groove 213 in the region without the protrusion 314 forms approximately 1 to 3 mm as described above, whereas the intermediate groove 213 is formed in the region where the protrusion 314 is formed.
  • the width d 1 of is smaller than the width d 2 described above.
  • the width d 1 of the intermediate groove 213 may correspond to about half of the width d 2 of the intermediate groove 213 having no protrusion 314. In this case, the width d 1 of the intermediate groove 213 is kept constant in the region where the protrusion 314 is formed.
  • the 4 may prevent rotation of the substrate W.
  • the surface of the protrusion 314 and the substrate W may not be rotated. Since the edges meet, the effect of preventing jamming is low.
  • the durability of the protrusion 314 has a relatively weak characteristic.
  • FIG. 5 illustrates a protrusion 324 according to another embodiment.
  • the protrusion 324 protrudes inward from an edge of the receiving groove 310.
  • the shape of the protrusion 324 according to FIG. 5 is similar to the shape of the protrusion of FIG. 4 described above, but there are differences in the width and the length of the protrusion.
  • the width d 2 of the intermediate groove 213 in the region without the protrusion 324 forms approximately 1 to 3 mm as described above, whereas in the region where the protrusion 324 is formed,
  • the width d 3 of the intermediate groove 213 is relatively smaller than the width d 2 described above, and may correspond to about 20 to 40%. That is, the protrusion 324 of the present exemplary embodiment may protrude relatively more than the protrusion of FIG. 4.
  • the length of the protrusion 324 in the circumferential direction of the receiving groove 310 may be configured to be relatively smaller than the above-described protrusion 314 of FIG.
  • the surface of the protrusion 324 meets the surface of the substrate W when the substrate W meets the protrusion 324.
  • the degree is reduced, in particular, the degree to which the durability of the protrusion 324 is significantly improved.
  • the width d 3 of the intermediate groove 213 is relatively small in the region where the protrusion 324 is formed, the convenience of loading / unloading of the substrate or the temperature gradient characteristic of keeping the temperature of the substrate constant are illustrated. It has similar characteristics to 4.
  • the center C of the seating portion 312 may be adjusted.
  • the circumferential angle ⁇ 3 of the protrusion 324 is formed to be smaller than the circumferential angle ⁇ 1 of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. do. Since it has been described above, a repeated description thereof will be omitted.
  • FIG. 6 illustrates a protrusion 334 according to another embodiment.
  • the protrusion 334 may have a shape that protrudes in parallel when protruding from the inner side of the edge of the receiving groove 310. That is, the distance between the protrusion 334 and the seating portion 312 is not constant as shown in the figure and is constantly changing.
  • the width of the intermediate groove 213 is relatively smaller in the region in which the protrusion 334 is formed than in FIGS. 4 and 5, so that the loading / unloading convenience of the substrate is somewhat low. Temperature gradient characteristics are significantly improved.
  • the surface of the protrusion 334 and the surface of the substrate W meet, thereby reducing the pinching of the substrate and improving durability of the protrusion. Indicates.
  • the center portion C of the seating portion 312 may be adjusted.
  • the circumferential angle ⁇ 4 of the protrusion 334 is relatively smaller than the circumferential angle ⁇ 1 of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. do. Since it has been described above, a repeated description thereof will be omitted.
  • Figure 7 shows the configuration of the protrusions 354, 356 according to another embodiment.
  • a pair of protrusions 354 and 356 may be provided along the inner edge of the receiving groove 310.
  • the protrusions 354 and 356 are spaced apart from each other by a predetermined distance along the inner edge of the receiving groove 310, and the protrusions 354 and 356 have a semi-circle shape having a predetermined radius, or a curved shape, It protrudes in a curved shape or the like.
  • the loading / unloading characteristics of the substrate are relatively improved since the area in which the protrusions 354 and 356 are formed is relatively small compared with the above-described embodiments.
  • the surface of the protrusions 354 and 356 and the surface of the substrate W meet to prevent the pinching of the substrate, but the protrusions are relatively.
  • the durability of the substrate decreases and the distance between the outer circumferential surface of the substrate and the heater block 21 becomes farther, resulting in a worse temperature gradient characteristic of the substrate.
  • FIG. 8 illustrates a configuration of the protrusions 344 and 346 according to another embodiment.
  • each of the protrusions 344 and 346 according to the present embodiment is configured such that when the protrusions 344 and 346 protrude from the edge of the receiving groove 310, the lengths of both surfaces forming the protrusions 344 and 346 are different from each other.
  • the first face 344A of the first protrusion 344 is configured to be longer than the second face 344B, and likewise, the third face 346A of the second protrusion 346. Is configured to be longer than the fourth surface 346B.
  • the first surface 344A of the first protrusion 344 and the third surface 346A of the second protrusion 346 may be disposed along an imaginary line.
  • the loading / unloading characteristics of the substrate are relatively improved because the area in which the protrusions 344 and 346 are formed is relatively small compared with the above-described embodiments.
  • the surface of the protrusions 344 and 346 and the surface of the substrate W meet to prevent the jamming of the substrate and to improve durability. You lose.
  • the center C of the seating portion 312 may be removed.
  • the circumferential angle ⁇ 6 of the pair of protrusions 344 and 346 is at the circumferential angle ⁇ 1 of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. It is formed relatively smaller in comparison. Since it has been described above, a repeated description thereof will be omitted.
  • the protrusions may be detachably provided.
  • the protrusion may be made of a material different from that of the block heater.
  • the protrusion may be made of a material that is relatively superior in durability and heat resistant to the heater block.
  • thermocouple 22a for measuring the temperature of the heater block 21.
  • 9 is a cross-sectional view showing the internal configuration of the heater block 21.
  • an insertion groove 29 is formed from the bottom of the heater block 21 toward the top to mount the thermocouple 22a, and the thermocouple 22a is formed inside the insertion groove 29.
  • reference numeral 22 denotes a shaft.
  • thermocouple 22a may infer the temperature of the substrate W heated by the heater block 21 by measuring the temperature of the heater block 21. Therefore, it may be advantageous that the thermocouple 22a is disposed adjacent to the substrate W inside the heater block 21.
  • the height h 2 of the insertion groove 29 measured at the bottom of the heater block 21 is approximately equal to the height h 1 of the heater block 21, or 90
  • the thermal energy for heating the substrate (W) may be discharged to the outside of the chamber 10 through the insertion groove (29). This may lower the heating efficiency of the substrate W and may lower the quality of the thin film deposited on the substrate W.
  • the height h 2 of the insertion groove 29 at the bottom of the heater block 21 is determined to be 60% or less than the height h 1 of the heater block 21, the top surface of the heater block on which the wafer is seated This is different from the temperature of, so it is not suitable as a process feedback temperature.
  • the height h 2 of the insertion groove 29 at the bottom of the heater block 21 is determined to be about 60 to 90% of the height h 1 of the heater block 21. , Preferably about 75%.
  • thermocouple 22a is provided not to contact the upper surface of the insertion groove 29 from the inside of the insertion groove 29 as shown in the figure. Therefore, even when the heater block 21 rotates, the damage of the thermocouple 22a can be prevented.
  • thermocouple 22a is disposed inside the insertion groove 29 to measure the temperature of the heater block 21, when the environment of the upper portion of the substrate W is changed, for example, The temperature of the heater block 21 may be accurately measured in a state in which it does not change sensitively according to environmental changes such as change, pressure change, and temperature change.
  • the present invention by forming an intermediate groove between the seating portion on which the substrate is seated in the receiving groove of the substrate support and the inner surface of the receiving groove, foreign matters such as particles are formed in the intermediate groove, so that the substrate is disposed in the receiving groove. If it is, it can be prevented from being placed inclined.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif de dépôt chimique en phase vapeur organométallique. Le dispositif de dépôt chimique en phase vapeur organométallique selon la présente invention comprend : une chambre qui fournit un espace de traitement dans lequel un substrat est traité; une partie d'alimentation en gaz pour alimenter la chambre en gaz de traitement; et une partie de support de substrat située à l'intérieur de la chambre, la partie de support de substrat présentant une rainure de réception sur laquelle le substrat est disposé et la partie supportant le support chauffant le substrat. Une partie d'assise est formée à l'intérieur de la rainure de réception, de manière telle que le substrat est situé sur celle-ci. Une rainure centrale est formée entre la périphérie de la partie d'assise et la rainure de réception.
PCT/KR2017/014312 2016-12-08 2017-12-07 Dispositif de dépôt chimique en phase vapeur organométallique WO2018106039A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201780076172.9A CN110088356A (zh) 2016-12-08 2017-12-07 有机金属化学气相沉积装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20160167139 2016-12-08
KR10-2016-0167139 2016-12-08
KR10-2017-0167443 2017-12-07
KR1020170167443A KR102154482B1 (ko) 2016-12-08 2017-12-07 유기금속화학기상증착장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319623A (ja) * 2003-04-14 2004-11-11 Shin Etsu Handotai Co Ltd サセプタ及び気相成長装置
KR20080069694A (ko) * 2000-12-22 2008-07-28 에이에스엠 아메리카, 인코포레이티드 기판 홀더의 제조 방법
KR20100031110A (ko) * 2007-06-28 2010-03-19 도쿄엘렉트론가부시키가이샤 탑재대 구조 및 열처리 장치
JP2010147080A (ja) * 2008-12-16 2010-07-01 Shin Etsu Handotai Co Ltd 気相成長用サセプタ及び気相成長装置並びにエピタキシャルウェーハの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080069694A (ko) * 2000-12-22 2008-07-28 에이에스엠 아메리카, 인코포레이티드 기판 홀더의 제조 방법
JP2004319623A (ja) * 2003-04-14 2004-11-11 Shin Etsu Handotai Co Ltd サセプタ及び気相成長装置
KR20060002975A (ko) * 2003-04-14 2006-01-09 신에쯔 한도타이 가부시키가이샤 서셉터 및 기상성장장치
KR20100031110A (ko) * 2007-06-28 2010-03-19 도쿄엘렉트론가부시키가이샤 탑재대 구조 및 열처리 장치
JP2010147080A (ja) * 2008-12-16 2010-07-01 Shin Etsu Handotai Co Ltd 気相成長用サセプタ及び気相成長装置並びにエピタキシャルウェーハの製造方法

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