+

WO2018101583A1 - Composition de suspension épaisse pour polissage de film organique et procédé de polissage de film organique la mettant en oeuvre - Google Patents

Composition de suspension épaisse pour polissage de film organique et procédé de polissage de film organique la mettant en oeuvre Download PDF

Info

Publication number
WO2018101583A1
WO2018101583A1 PCT/KR2017/009991 KR2017009991W WO2018101583A1 WO 2018101583 A1 WO2018101583 A1 WO 2018101583A1 KR 2017009991 W KR2017009991 W KR 2017009991W WO 2018101583 A1 WO2018101583 A1 WO 2018101583A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
organic film
group
substituted
unsubstituted
Prior art date
Application number
PCT/KR2017/009991
Other languages
English (en)
Korean (ko)
Inventor
김정희
강동헌
최정민
유용식
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Priority to CN201780074614.6A priority Critical patent/CN110023433B/zh
Publication of WO2018101583A1 publication Critical patent/WO2018101583A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the present invention relates to an organic film polishing slurry composition and an organic film polishing method using the same.
  • the semiconductor manufacturing method includes forming an inorganic film such as a silicon oxide film and a silicon nitride film on a patterned silicon wafer, and gap-filling via-holes formed in the inorganic film. It includes a process to make.
  • the gap-filling process is a process for filling the via-holes with the organic film material, and after the gap-filling process, a process of removing and planarizing the excessively formed organic film should be accompanied.
  • the current spotlight is polishing by chemical mechanical polishing (CMP).
  • organic membrane polishing slurry composition for organic membranes included polymer abrasive particles because the organic membrane should be polished at a high polishing amount per unit time, so that surface conditions such as scratches should not be deteriorated.
  • an organic film polishing slurry composition for organic film containing polymer abrasive particles there is a problem that the desired polishing amount can not be obtained while increasing the flatness of the polishing surface depending on the organic film.
  • the metal oxide abrasive grains used for polishing the metal film such as silicon
  • the semiconductor yield when the metal oxide abrasive grains used for polishing the metal film, such as silicon, are used for polishing the organic film, excessive polishing, low polishing surface flatness, scratches, or the like, lower the semiconductor yield.
  • An object of the present invention is to provide an organic film polishing slurry composition excellent in polishing rate and an organic film polishing method using the same.
  • Another object of the present invention is to provide a slurry composition for polishing an organic film and an organic film polishing method using the same, which can prevent precipitation of metal particles and contamination of a slurry supply device.
  • Still another object of the present invention is to provide a slurry composition for polishing an organic film having excellent polishing properties for an organic film without using abrasive particles, and an organic film polishing method using the same.
  • One aspect of the present invention relates to a slurry composition for organic film polishing.
  • the slurry composition for polishing an organic film includes a polishing accelerator and water including repeating units derived from an oxidizing agent, an organic acid, maleic acid or maleic anhydride, and the polishing accelerator has a lower weight than the organic acid. It is included.
  • the weight ratio of the polishing accelerator and the organic acid may be 1: 1.5 to 1: 100.
  • the polishing accelerator is a copolymer of a monomer mixture comprising maleic acid or maleic anhydride,
  • the monomer mixture may include 40 wt% to 100 wt% of the maleic acid or maleic anhydride.
  • the polishing accelerator may have a weight average molecular weight of 100 to 10,000.
  • the oxidant may include one or more of ferric halide, ferric nitrate, ferric sulfate, and iron phosphate.
  • the organic acid may be one having a carboxyl group.
  • the organic acid may comprise one or more of lactic acid, formic acid, acetic acid and propionic acid.
  • the weight ratio of the oxidizing agent and the organic acid may be 7.5: 1 to 1.5: 1.
  • the polishing rate may be 1,500 Pa / mim or more.
  • the slurry composition may not include abrasive particles.
  • the organic layer may be an organic layer having a carbon content of 70 atom% or more.
  • Another aspect of the invention relates to a method for polishing an organic film.
  • the polishing method may include polishing the organic film using the slurry composition for polishing the organic film.
  • the present invention provides an organic film polishing slurry composition excellent in polishing rate, which can prevent precipitation of metal particles and contamination of a slurry supply device, and which has excellent polishing properties for an organic film without using abrasive particles. It has the effect of providing the organic film polishing method.
  • FIG. 1 is a schematic diagram of an organic film polishing method according to an embodiment of the present invention.
  • 'polishing speed (unit: ⁇ / min)' is a polishing pad using FUJIBO's H0800 CMP pad, the grinding machine using Applied Materials (AMAT) 's 200mm MIRRA equipment, the falling pressure 1 psi, slurry flow rate 200mL / min, platen speed 100rpm and head speed 90rpm, polishing for 1 minute on the patterned wafer on which silica film and organic film were formed, and then thin film thickness meter on the polished surface.
  • AMAT Applied Materials
  • K-MAC K-MAC
  • X-Y which shows a range means "X or more and Y or less.”
  • the slurry composition for polishing an organic film of the present invention includes a polishing accelerator including water and a repeating unit derived from an oxidizing agent, an organic acid, maleic acid or maleic anhydride, and water, wherein the polishing accelerator is included in a weight less than that of the organic acid. .
  • the slurry composition for polishing an organic film of the present invention does not contain abrasive particles.
  • the slurry composition for polishing an organic film of the present invention can maintain excellent polishing characteristics for an organic film without using abrasive particles by using an oxidizing agent and an organic acid.
  • the slurry composition for polishing an organic film of the present invention is excellent in flatness by preventing the occurrence of scratches caused by the use of abrasive particles, and also by preventing the precipitation and precipitation of metal particles in which organic acids may be generated from the oxidizing agent. It is possible to prevent the reduction of the polishing rate and to prevent contamination of the slurry supply device.
  • the slurry composition for polishing an organic film of the present invention may include a polishing accelerator including a repeating unit derived from maleic acid or maleic anhydride, thereby effectively hydrophilizing the surface of the organic film to significantly increase the polishing rate.
  • the polishing accelerator including the repeating unit derived from maleic acid or maleic anhydride of the present invention is included in less weight than the organic acid. If the polishing accelerator is more than the organic acid, the polishing rate of the present invention cannot be reached.
  • the slurry composition for polishing an organic film of the present invention contains an oxidizing agent.
  • the oxidant may be to include an iron component.
  • the oxidant containing the iron component serves to oxidize the surface layer of the organic layer to generate polishing.
  • the oxidizing agent containing the iron component is, for example, in ferric halide, ferric chloride, ferric bromide, ferric iodide, and the like, such as ferric halide, ferric nitrate, ferric sulfate, and ferric phosphate. It may include one or more, but is not limited thereto. Specifically, ferric chloride, ferric nitrat, ferric sulfate, ferric phosphate, etc. may be mentioned as an oxidizing agent containing the iron component used in the present invention.
  • the oxidizing agent may be included in 0.001 to 15% by weight, specifically 0.01 to 5% by weight, more specifically 0.05 to 3% by weight of the slurry composition for polishing the organic film. It is possible to maintain excellent etching property to the organic film in the above range.
  • the slurry composition for polishing an organic film of the present invention contains an organic acid.
  • the organic acid is for stabilizing an oxidizing agent including a metal component to prevent the precipitation of metal in the slurry and to improve the polishing properties of the slurry composition.
  • the organic acid may be an organic acid having one carboxyl group in order to prevent precipitation of metal particles.
  • the organic acid having one carboxyl group it is possible to prevent a decrease in the polishing rate, and since precipitation does not occur, there is an advantage of preventing contamination of the slurry supply device.
  • the organic acid having one carboxyl group used in the present invention may include, for example, one or more of lactic acid, formic acid, acetic acid, and propionic acid, but is not limited thereto.
  • the organic acid may be included in 0.02 to 0.5% by weight, specifically 0.03 to 0.2% by weight, more specifically 0.04 to 0.1% by weight in the slurry composition. In this range, both polishing rate and slurry stability are excellent.
  • the oxidizing agent and the organic acid may be included in a weight ratio of 7.5: 1 to 1.5: 1. Specifically, the oxidizing agent and the organic acid may be included in a weight ratio of 5: 1 to 2: 1, and more specifically 2.5: 1 to 2: 1. It is possible to maintain the stability of the oxidizing agent and high organic film polishing rate in the above range.
  • the slurry composition for polishing an organic film of the present invention is used by dissolving an oxidizing agent and an organic acid in water.
  • the water may be deionized water, but is not limited thereto.
  • the water content is added to 100% by weight in combination with the contents of the oxidizing agent, organic acid and polishing accelerator.
  • the slurry composition for polishing an organic film of the present invention includes a polishing accelerator including a repeating unit derived from maleic acid or maleic anhydride.
  • the polishing accelerator is present in a dispersed state in the liquid phase, and serves to accelerate the polishing rate and stabilize the iron ions in the slurry.
  • the polishing accelerator is a copolymer of a monomer mixture comprising maleic acid or maleic anhydride, wherein the monomer mixture is 40 wt% to 100 wt%, specifically 40 wt% to maleic acid or maleic anhydride. 90 wt%, more specifically 40 wt% to 80 wt%, and more specifically 50 wt% to 70 wt%.
  • the polishing rate can be significantly increased.
  • the monomer mixture may be a single mixture containing only maleic acid or maleic anhydride and may further include one or more monomers having an unsaturated group.
  • the monomer mixture is (meth) acrylic acid, (meth) acryl amide, vinyl alcohol, vinyl acetate, vinylpyridine vinyl pyridine, allyl amine, diallyl ammonium, styrene and one or more of its derivatives, but are not limited thereto.
  • the polishing accelerator may be prepared by copolymerizing the monomer mixture with an initiator, but is not limited thereto.
  • the polishing accelerator may have a weight average molecular weight of 100 to 10,000, specifically 100 to 7,000, more specifically 100 to 6,000. In the above range, the polishing accelerator is stably dispersed in the slurry.
  • the polishing accelerator is a copolymer having a repeating unit derived from maleic acid or maleic anhydride, that is, a carboxyl group is formed in two or more directions in one unit, and has a high hydrophilic effect. Hydration can significantly increase the polishing rate.
  • the polishing accelerator is included in less weight than the organic acid.
  • the polishing accelerator is more than the organic acid, the polishing properties can be reduced due to the steric effect and the volume of the polishing accelerator, and thus the polishing rate of the present invention cannot be reached.
  • the weight ratio of the polishing accelerator and the organic acid may be 1: 1.5 to 1: 100, specifically 1: 1.5 to 1:80, and more specifically 1: 1.5 to 1:60. In the above range, when using the slurry composition has an effect that the polishing rate is significantly increased.
  • the polishing accelerator may be included in 0.0001 to 0.4% by weight, specifically 0.0001 to 0.2% by weight, more specifically 0.0001 to 0.1% by weight in the slurry composition. In this range, the polishing rate is significantly increased.
  • the polishing rate was 1,500 kPa / mim or more, for example, 1,500 kPa. / mim to 5,000 dl / mim, specifically 1,600 dl / mim to 4,000 dl / mim, more specifically 1,700 dl / mim to 3,500 dl / mim. In the above range, there is an advantage that the process efficiency is high.
  • the slurry composition for polishing an organic film according to the present invention may be for polishing an organic film.
  • EMBODIMENT OF THE INVENTION the organic film which is a grinding
  • substituted means that at least one hydrogen atom of the functional group is a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, an amino group, a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, C3 to C3 C30 cycloalkyl group, C3 to C30 cycloalkenyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C20 heteroalkyl group, C2 to C30 heterocycloalkyl group, C2 to C30 heterocycloalkenyl group, C2 to C30 heteroaryl group , C2 to C30 heteroarylalkyl group, C1 to C20 alkylamine group, C1 to C30 alkoxy group, C6 to C30 aryloxy group, C1 to
  • the "functional group including P” may be represented by the following Chemical Formula A
  • the “functional group including B” may be represented by the following Chemical Formula B:
  • R a , R b , R c and R d are each independently hydrogen, hydroxyl group, substitution Or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C1 to C20 haloalkyl group, substituted or unsubstituted Substituted C1 to C20 alkylsulfonate group, substituted or unsubstituted C1 to C20 alkylsulfonyl group, substituted or unsubstituted C2 to C20 alkylamide group, substituted or unsubstituted C3 to C20 alkyl ester group, substitution Or unsubstituted C2 to C20 cyano
  • the functional group may be -B (OH) 2 , -B (H) (CH 3 ), -B (CH 2 CH 3 ) 2, or the like.
  • the organic film When an inorganic film is deposited on a patterned wafer, for example a silicon wafer, the organic film fills the generated via-holes.
  • the slurry composition for organic film polishing should be able to polish the organic film to a sufficient polishing rate in order to planarize the deposited film, and also increase the flatness of the polishing surface, so that residues remaining in the inorganic film after polishing should be easily removed.
  • the inorganic film may be a film formed of at least one of silicon oxide and silicon nitride, but is not limited thereto.
  • the inorganic membrane may have a carbon content of less than 1 atom%, for example 0 to 1 atom% or for example 0 atom%.
  • the organic film may have a large difference in polishing amount per unit time and flatness after polishing depending on the material of the organic film.
  • the slurry composition for polishing an organic film organic film of the present invention is a composition for polishing an organic film having a high carbon content, and may increase the polishing amount per unit time of the organic film during the polishing of the organic film and have a high selectivity to the inorganic film.
  • the organic film may have a carbon content of 70 atom% or more, for example, 70 to 99 atom%, specifically 70 to 95 atom%.
  • the polishing amount and the polishing rate are high, the scratch does not occur, and the flatness of the polishing surface may be high.
  • the organic film has a film density of 0.5 to 2.5 g / cm 3 For example, it may be 1.0 to 2.0 g / cm 3 , for example, 1.2 to 1.6 g / cm 3 , and the slurry composition of the present invention has a high polishing amount, no scratches, and a high flatness of the polishing surface. Can be.
  • the organic film may have a hardness of 0.4 GPa or more, for example, 1.0 GPa or more, for example, 1.3 GPa or more, for example, 1.3 to 1.5 GPa, and in the above range, the polishing amount of the present invention is high and scratches.
  • the flatness of the polishing surface may be high.
  • the organic film to be polished of the present invention may have an acid value of substantially 0 mgKOH / g.
  • an organic film which is a polishing target of the present invention
  • a slurry composition for polishing an organic film organic film including a conventional polymer abrasive there is a problem that the polishing rate is lowered.
  • the slurry composition for polishing an organic film of the present invention can secure the amount of polishing per unit time of the organic film applicable to the CMP process.
  • the term "substantially” includes not only the case where the acid value is 0 mgKOH / g but also a slight error at 0 mgKOH / g.
  • the organic film to be polished of the present invention may be prepared by applying a composition for forming an organic film on an inorganic film and then thermosetting (baking) at a high temperature, for example, 200 to 400 ° C.
  • the organic film forming composition may include a compound having a substituted or unsubstituted aromatic group.
  • the "compound having a substituted or unsubstituted aromatic group” refers to a compound that does not decompose even after thermal curing so that the organic film formed of the composition can exhibit a high carbon content.
  • the unsubstituted aromatic group means a single or fused polycyclic aromatic group having 6 to 100 carbon atoms, for example, 6 to 50 carbon atoms, and specifically includes units of the following Chemical Formulas 1-1 to 1-26 can do:
  • composition for organic film formation containing the compound which has a substituted or unsubstituted aromatic group is demonstrated in detail.
  • the composition for forming an organic film may be a compound having a substituted or unsubstituted aromatic group and may include a material including Formula 2 below:
  • a is 1 ⁇ a ⁇ 190
  • R1 is hydrogen, hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C
  • R2 is hydrogen, an amino group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C20 aryloxy group, a dialkylamino group (-NRR ', where R, R' are independently substituted with each other or Unsubstituted C1 to C10 alkyl group or substituted or unsubstituted C6 to C10 aryl group), hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted A substituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or
  • R3 is substituted or unsubstituted
  • R 2 can be a substituted or unsubstituted C 1 to C 10 alkoxy group.
  • composition for forming an organic film including Chemical Formula 2 may increase carbon content, film density, and hardness after thermosetting, and refer to Korean Patent No. 10-0866015 for a more detailed manufacturing method thereof.
  • the composition for forming an organic film according to the first embodiment may further include at least one of a crosslinking component, an acid catalyst, and an organic solvent, in addition to the material containing Chemical Formula 2. Specifically, it may include 1 to 20% by weight of the material represented by the formula (2), 0.1 to 5% by weight of the crosslinking component, 0.001 to 0.05% by weight of the acid catalyst, and 75 to 98.8% by weight of the organic solvent.
  • the crosslinking component may be a melamine resin (eg, N-methoxymethyl-melamine resin, N-butoxymethylmelamine resin), methylated or butylated urea resin, amino resin, glycoluril derivative of Formula 3, Bisepoxy compound, may include one or more of the melamine derivative of formula (5):
  • Acid catalysts include p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl of euphonic acid It may include one or more of the esters.
  • the organic solvent is not particularly limited as long as it is an organic solvent having sufficient solubility in a compound having a substituted or unsubstituted aromatic group, and examples thereof include propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate and the like.
  • composition for forming an organic film of the first embodiment may be coated with a thickness of 500 to 4000 kPa, and thermally cured at 200 to 400 ° C. for 10 seconds to 10 minutes to form an organic film, but is not limited thereto.
  • the composition for forming an organic film may be a compound having a substituted or unsubstituted aromatic group and may include a material represented by the following formula (6):
  • R4 to R9, X1 to X6 are each independently hydrogen, hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted Or an unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30
  • n1, n2, n3, n4, n5 and n6 are each independently in the range of 0 to 2, and 2 ⁇ n1 + n2 + n3 + n4 + n5 + n6 ⁇ 6).
  • R 4 , R 5 , R 6 , R 7 , R 8 and R 9 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or It may be an unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a functional group including P or a functional group including B.
  • X 1 to X 6 may be each independently hydrogen, a hydroxy group, a substituted or unsubstituted C 1 to C 20 alkylamine group, an amino group, a functional group including P, a functional group including B.
  • the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except for including the material represented by Chemical Formula 6 instead of the material represented by Chemical Formula 2. Therefore, hereinafter, only the substance represented by Chemical Formula 6 will be described.
  • the material represented by Chemical Formula 6 may be a mixture of two or more compounds having different positions of substituents, including aromatic rings having strong absorption in a short wavelength region (for example, 193 nm and 248 nm), even if no special catalyst is used. Since the crosslinking reaction proceeds at a high temperature, it is possible to prevent contamination by a catalyst, especially an acid, and the aromatic group compound of Chemical Formula 6 may have an average molecular weight of 500 to 4000, and the thickness of the organic film may be realized or a good thin film may be formed in the above range. can do.
  • the material represented by Chemical Formula 6 may increase carbon content, film density, and hardness after thermal curing of the organic film composition.
  • the material represented by Chemical Formula 6 may be prepared by a conventional method, for example, it may be prepared by reacting and reducing acetyl chloride, benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
  • acetyl chloride benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
  • Korea Patent Registration No. 10-1311942 For more detailed manufacturing method refer to Korea Patent Registration No. 10-1311942.
  • the organic film composition may include an aromatic group-containing polymer selected from (i), (ii) and (iii) as a compound having a substituted or unsubstituted aromatic group:
  • R10 is substituted or unsubstituted
  • R11 is hydrogen, hydroxy group, halogen atom, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted A substituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 Aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2
  • R12 is substituted or unsubstituted
  • R13 is substituted or unsubstituted
  • R14 is substituted or unsubstituted
  • R15 is substituted or unsubstituted, Any one of
  • R in R10, R12, R13 and R15 is each independently hydrogen, hydroxy group, halogen atom, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted A substituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cyclo Alkenyl groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C7 to C30 arylalkyl groups, substituted or unsubstituted C2 to C30 heterocycloalky
  • the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except that the aromatic group-containing polymer is included in place of the material represented by Chemical Formula 2. Therefore, hereinafter, only the aromatic group-containing polymer will be described.
  • the aromatic group-containing polymer may increase carbon content, film density and hardness after thermal curing of the organic film composition, and may be prepared by a conventional method, and refer to Korean Patent No. 10-0908601 for more details.
  • the organic film composition is a compound having a substituted or unsubstituted aromatic group material comprising the formula (2); A substance represented by Chemical Formula 6; It may contain two or more of the aromatic group-containing polymers selected from the above (i), (ii) and (iii). It is substantially the same as the composition of the first embodiment except that it contains two or more kinds.
  • the organic film polishing method of the present invention includes the step of polishing the organic film using the slurry composition for organic film polishing, wherein the organic film polishing slurry composition is an organic film polishing slurry composition according to the present invention, that is, A polishing accelerator comprising a repeating unit derived from an oxidizing agent, an organic acid, maleic acid or maleic anhydride and water, wherein the polishing accelerator is an organic film polishing slurry composition containing less than the organic acid.
  • FIG. 1A illustrates a stacked state of a silicon wafer, an inorganic film, and an organic film prior to polishing an organic film.
  • the silicon wafer 100 is patterned in an intaglio to locally form recesses, and the inorganic wafer is formed on the silicon wafer 100.
  • the film 110 is deposited, and the organic film 120 is coated on the inorganic film and manufactured by thermal curing at 200 to 400 ° C.
  • T represents an imaginary polishing stop line.
  • polishing is performed by rotating the silicon wafer 100, until the polishing stop line T is reached. Polishing is carried out up to the polishing stop line T in FIG.
  • a silica film having a thickness of 500 mV was deposited on the pattern wafer having the negative pattern formed on the surface thereof, and an organic film having a thickness of 1400 mV was formed to fill the negative pattern formed on the surface of the silica film.
  • the organic film was prepared by applying the composition for forming an organic film (T4 of SDI Co., Ltd.) on a silica film and thermosetting at 400 ° C.
  • acrylic acid-maleic anhydride copolymer poly (acrylic acid-maleic anhydride, PAAMA, manufactured by BASF, molecular weight: 3,000, 62% by weight maleic anhydride and 38% by weight acrylic acid)
  • polyacrylic acid (polyacrylic acid, PAA, manufactured by Sigma-Aldrich, molecular weight 2,000)
  • Polishing rate (unit: L / min): After polishing the pattern wafer in which the silica film and organic film which were manufactured by the manufacture example were formed using the CMP slurry manufactured by the Example and the comparative example, under the following conditions, Polishing rate was measured.
  • FUJIBO H0800 CMP pad was used as the polishing pad.
  • Applied Materials (AMAT) 200mm MIRRA equipment was used as a grinding machine. Grinding was performed for 1 minute at a lower pressure of 1 psi, a slurry flow rate of 200 mL / minute, a platen speed of 100 rpm, and a head speed of 90 rpm. Was performed.
  • the thickness of the polished film (unit: mm) was measured using the thin film thickness meter (ST4000, K-MAC) on the polished surface, and the polishing rate (unit: mm / min) was measured from the measured thickness.
  • the polishing rate (unit: mm / min) was measured from the measured thickness.
  • Scratch (unit: number): The number of defects of the polished surface of the wafer polished under the polishing conditions was measured using a Defect measuring instrument (Hitachi, LS6800).
  • the polishing rate with respect to the organic film was excellent, the stability of the CMP slurry was excellent, and no precipitation occurred, and scratching occurred during polishing. Development was effectively suppressed.
  • the CMP slurry of Comparative Example 1 which does not include an organic acid and a polishing accelerator, as shown in Table 2, had a particle precipitation, Comparative Example 2, which contained no polishing accelerator or contained an polishing accelerator in excess of the organic acid.
  • the slurry composition for polishing an organic film of Comparative Example 6 has a low organic film polishing rate, and the slurry composition for polishing an organic film of Comparative Examples 3 to 5, wherein the polishing accelerator does not include a repeating unit derived from maleic acid or maleic anhydride. It can be seen that the organic film polishing rate is lowered.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une composition de suspension épaisse pour le polissage d'un film organique, comprenant un oxydant, un acide organique, un accélérateur de polissage comprenant une unité récurrente issue d'acide maléique ou d'anhydride maléique, ainsi que de l'eau, l'accélérateur de polissage étant contenu dans un poids inférieur à celui de l'acide organique.
PCT/KR2017/009991 2016-12-01 2017-09-12 Composition de suspension épaisse pour polissage de film organique et procédé de polissage de film organique la mettant en oeuvre WO2018101583A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201780074614.6A CN110023433B (zh) 2016-12-01 2017-09-12 用于抛光有机膜的浆料组合物和使用其抛光有机膜的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160163103A KR102040310B1 (ko) 2016-12-01 2016-12-01 유기막 연마용 슬러리 조성물 및 이를 이용한 유기막 연마 방법
KR10-2016-0163103 2016-12-01

Publications (1)

Publication Number Publication Date
WO2018101583A1 true WO2018101583A1 (fr) 2018-06-07

Family

ID=62242121

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/009991 WO2018101583A1 (fr) 2016-12-01 2017-09-12 Composition de suspension épaisse pour polissage de film organique et procédé de polissage de film organique la mettant en oeuvre

Country Status (3)

Country Link
KR (1) KR102040310B1 (fr)
CN (1) CN110023433B (fr)
WO (1) WO2018101583A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867802A (zh) * 2019-12-20 2022-08-05 凯斯科技股份有限公司 用于抛光有机膜的浆料组合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090033016A (ko) * 2007-09-28 2009-04-01 후지필름 가부시키가이샤 연마액 및 그것을 사용하는 연마 방법
US20090239373A1 (en) * 2005-11-30 2009-09-24 Jsr Corporation Chemical mechanical polishing method and method of manufacturing semiconductor device
KR20090127089A (ko) * 2008-06-05 2009-12-09 제이에스알 가부시끼가이샤 회로 기판의 제조에 사용하는 화학 기계 연마용 수계 분산체, 회로 기판의 제조 방법, 회로 기판 및 다층 회로 기판
KR20140135743A (ko) * 2012-03-14 2014-11-26 히타치가세이가부시끼가이샤 연마 방법
KR20160135081A (ko) * 2015-05-15 2016-11-24 삼성에스디아이 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5459466B2 (ja) * 2008-06-05 2014-04-02 Ｊｓｒ株式会社 回路基板の製造に用いる化学機械研磨用水系分散体、回路基板の製造方法、回路基板および多層回路基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090239373A1 (en) * 2005-11-30 2009-09-24 Jsr Corporation Chemical mechanical polishing method and method of manufacturing semiconductor device
KR20090033016A (ko) * 2007-09-28 2009-04-01 후지필름 가부시키가이샤 연마액 및 그것을 사용하는 연마 방법
KR20090127089A (ko) * 2008-06-05 2009-12-09 제이에스알 가부시끼가이샤 회로 기판의 제조에 사용하는 화학 기계 연마용 수계 분산체, 회로 기판의 제조 방법, 회로 기판 및 다층 회로 기판
KR20140135743A (ko) * 2012-03-14 2014-11-26 히타치가세이가부시끼가이샤 연마 방법
KR20160135081A (ko) * 2015-05-15 2016-11-24 삼성에스디아이 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114867802A (zh) * 2019-12-20 2022-08-05 凯斯科技股份有限公司 用于抛光有机膜的浆料组合物
CN114867802B (zh) * 2019-12-20 2024-02-20 凯斯科技股份有限公司 用于抛光有机膜的浆料组合物

Also Published As

Publication number Publication date
KR20180062903A (ko) 2018-06-11
KR102040310B1 (ko) 2019-11-04
CN110023433B (zh) 2021-08-03
CN110023433A (zh) 2019-07-16

Similar Documents

Publication Publication Date Title
WO2019093620A1 (fr) Composition de suspension de polissage chimico-mécanique pour film organique et procédé de polissage l'utilisant
WO2013100409A1 (fr) Monomère pour une composition de masque dur, composition de masque dur comprenant le monomère, et procédé permettant de former un motif à l'aide de la composition de masque dur
WO2016186356A1 (fr) Composition d'une suspension de polissage mécano-chimique (cmp) d'un film organique et procédé de polissage l'utilisant
WO2016080614A1 (fr) Composition de pâte de cmp pour film organique et procédé de polissage l'utilisant
WO2014065500A1 (fr) Composition de masque dur et procédé de formation de motif l'utilisant
WO2013100365A1 (fr) Monomère pour une composition de masque dur, composition de masque dur comprenant le monomère et procédé de formation de motif à l'aide de la composition de masque dur
WO2019022394A1 (fr) Nouveau polymère pour la formation d'un film de sous-couche de résine photosensible, composition pour la formation d'un film de sous-couche de résine photosensible le comprenant et procédé de fabrication d'élément semi-conducteur à l'aide de celui-ci
WO2014104480A1 (fr) Monomère, composition de masque dur comprenant ledit monomère, et procédé permettant de former un motif à l'aide de ladite composition de masque dur
WO2011081316A2 (fr) Composition pour la couche de fond d'un résist, et procédé l'utilisant pour fabriquer un dispositif de type circuit intégré à semi-conducteurs
WO2020067800A1 (fr) Composition d'encre pour dispositif électroluminescent organique
WO2017057936A1 (fr) Composition formée d'une suspension de polissage mécano-chimique à base d'un film organique et procédé de polissage l'utilisant
WO2014171766A1 (fr) Composition de suspension de cmp de film organique et procédé de polissage l'utilisant
WO2011081321A2 (fr) Composition pour la couche inférieure d'une résine, et procédé utilisant ladite composition pour la fabrication d'un dispositif à circuits intégrés à semi-conducteurs
WO2018101583A1 (fr) Composition de suspension épaisse pour polissage de film organique et procédé de polissage de film organique la mettant en oeuvre
WO2012005418A1 (fr) Composé contenant un noyau aromatique pour une sous-couche de réserve, composition de sous-couche de réserve le contenant et procédé de formation de motif de dispositif au moyen de cette composition
WO2022055149A1 (fr) Composition pour résine photosensible semi-conductrice et procédé de formation de motif l'utilisant
WO2017090889A1 (fr) Composition de pâte cmp et procédé de polissage de film organique l'utilisant
WO2025009951A1 (fr) Composition de polissage pour processus semi-conducteur et procédé de polissage de substrat l'utilisant
WO2011052934A2 (fr) Composition d'encre pour jet d'encre pour la formation d'un film transparent et procédé de préparation d'une telle composition
WO2018182307A1 (fr) Composition de gravure de film de nitrure de silicium
WO2022245014A1 (fr) Composition de masque dur à base de carbone déposé par rotation qui présente une faible perte par évaporation, et procédé de formation de motif utilisant la composition
WO2020045904A1 (fr) Composition d'encre pour diode électroluminescente organique
WO2021054570A1 (fr) Composition de masque dur, couche de masque dur et procédé de formation de motif
WO2020130261A1 (fr) Composé d'agent de réticulation, composition photosensible le comprenant, et matériau photosensible l'utilisant
WO2017034157A1 (fr) Composition de suspension de pmc pour film organique, son procédé de préparation, et procédé de polissage d'un film organique l'utilisant

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17875466

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17875466

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载