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WO2018101573A1 - Dispositif d'affichage électroluminescent et son procédé de fabrication - Google Patents

Dispositif d'affichage électroluminescent et son procédé de fabrication Download PDF

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Publication number
WO2018101573A1
WO2018101573A1 PCT/KR2017/008011 KR2017008011W WO2018101573A1 WO 2018101573 A1 WO2018101573 A1 WO 2018101573A1 KR 2017008011 W KR2017008011 W KR 2017008011W WO 2018101573 A1 WO2018101573 A1 WO 2018101573A1
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WIPO (PCT)
Prior art keywords
light emitting
contact electrode
semiconductor layer
layer
switching element
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PCT/KR2017/008011
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English (en)
Korean (ko)
Inventor
김태근
박주현
이병룡
Original Assignee
고려대학교 산학협력단
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Publication of WO2018101573A1 publication Critical patent/WO2018101573A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors

Definitions

  • the present invention relates to a display device and a method for manufacturing the same, and more particularly to a method for manufacturing a light emitting device display device.
  • micro LEDs are attracting attention in various fields such as visible wireless communication technology, automotive intelligent headlamps, optogenetics, medical devices, and displays.
  • many researches are being conducted to replace the existing display by developing a micro LED-based display that can drive the existing display with high reliability and low power.
  • the research is being carried out using the flip chip method which inverts the micro LED array onto the CMOS substrate.
  • This is a way to implement the display by driving the CMOS circuit with n contact as common.
  • This method has many difficulties in real commercialization, such as thermal stability of bump metal used for p contact, difficulty in aligning CMOS and micro LED arrays, and a large number of defective pixels. Since the circuit is opaque, it is difficult to be applied to the transparent display which is required recently.
  • An object of the present invention is to provide a light emitting device display device and a method of manufacturing the same, which solves problems caused by alignment problems, bump metal safety problems, and wide bonding pads caused by a flip chip-based micro LED display.
  • the light emitting device display device for solving the above problems, the substrate; And light emitting devices disposed on the substrate and adjacent to each other by a plurality of first contact electrodes formed in parallel to each other in a first direction and a plurality of second contact electrodes formed in parallel to each other in a second direction perpendicular to the first direction. And a light emitting device array including a plurality of light emitting devices connected to each other, wherein each of the plurality of light emitting devices includes: a switching device formed of a resistance change material between the first contact electrode and the light emitting device is switched on; The light is turned on according to the potential difference between the first contact electrode and the second contact electrode connected to the self.
  • each of the plurality of light emitting elements may include a first semiconductor layer formed on the substrate; An active layer formed on the first semiconductor layer; A second semiconductor layer formed on the active layer; The switching element formed on the first semiconductor layer and formed of a resistance change material; The first contact electrode formed on the first switching element; A transparent electrode layer formed on the second semiconductor layer; And the second contact electrode formed on the transparent electrode layer.
  • the first semiconductor layer may be doped with n-type
  • the second semiconductor layer may be a semiconductor layer doped with p-type
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state, thereby maintaining a switched on state.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • the light emitting device display device for solving the above problems is a substrate; And light emitting devices disposed on the substrate and adjacent to each other by a plurality of first contact electrodes formed in parallel to each other in a first direction and a plurality of second contact electrodes formed in parallel to each other in a second direction perpendicular to the first direction. And a light emitting device array including a plurality of light emitting devices connected to each other, wherein the plurality of light emitting devices are passivated with a resistance change material, and the second contact electrode is formed on the passivation material. And a switching region formed between the light emitting element and the light emitting element are turned on in accordance with a potential difference between the first contact electrode and the second contact electrode connected to the light emitting element to generate light.
  • each of the plurality of light emitting elements may include a first semiconductor layer formed on the substrate; An active layer formed on the first semiconductor layer; A second semiconductor layer formed on the active layer; The first contact electrode formed on the first semiconductor layer; A transparent electrode layer formed on the second semiconductor layer; And the second contact electrode formed on the switching region formed of a passivation material on the transparent electrode layer.
  • the first semiconductor layer may be doped with n-type
  • the second semiconductor layer may be a semiconductor layer doped with p-type
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state to maintain a switched on state.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • the light emitting device display device for solving the above problems is a substrate; And light emitting devices disposed on the substrate and adjacent to each other by a plurality of first contact electrodes formed in parallel to each other in a first direction and a plurality of second contact electrodes formed in parallel to each other in a second direction perpendicular to the first direction. And a light emitting device array including a plurality of light emitting devices connected to each other, wherein each of the plurality of light emitting devices includes: a switching device formed of a resistance change material between the second contact electrode and the light emitting device is switched on; The light is turned on according to the potential difference between the first contact electrode and the second contact electrode connected to the self.
  • each of the plurality of light emitting elements may include a first semiconductor layer formed on the substrate; An active layer formed on the first semiconductor layer; A second semiconductor layer formed on the active layer; The first contact electrode formed on the first semiconductor layer; A transparent electrode layer formed on the second semiconductor layer; A switching element formed of a resistance change material on the transparent electrode layer; And the second contact electrode formed on the switching element.
  • the first semiconductor layer may be doped with n-type
  • the second semiconductor layer may be a semiconductor layer doped with p-type
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state, thereby maintaining a switched on state.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • a method of manufacturing a light emitting device display device for solving the above technical problem includes the steps of: sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; (b) etching the first semiconductor layer, the active layer, and the second semiconductor layer so that a plurality of light emitting devices are separated and a portion of the first semiconductor layer of each light emitting device is exposed to the outside; (c) forming a switching element with a resistance change material on each of the first semiconductor layers exposed to the outside of the plurality of light emitting elements, and performing an electro-forming process on the switching element; (d) forming a first contact electrode on the switching element and forming a transparent electrode layer on the second semiconductor layer; And (e) forming a second contact electrode on the transparent electrode.
  • step (c) an electro-forming process may be performed on the switching device by applying a voltage between the first semiconductor layer and the switching device.
  • the first contact electrode is formed to be connected to the first contact electrode of the light emitting element adjacent in the first direction
  • the second contact electrode formed in the second direction orthogonal to the first direction is the light emitting element adjacent in the second direction It may be formed to be connected to the second contact electrode of the.
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state so that the switched on state can be maintained.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • the light emitting device display device manufacturing method for solving the above technical problem, (a) sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate ; (b) etching the first semiconductor layer, the active layer, and the second semiconductor layer so that a plurality of light emitting devices are separated and a portion of the first semiconductor layer of each light emitting device is exposed to the outside; (c) forming a first contact electrode on a first semiconductor layer exposed to the outside of the plurality of light emitting devices, and forming a transparent electrode layer on the second semiconductor layer; (d) forming a passivation layer on the light emitting device to cover the transparent electrode layer with a resistance change material; (e) performing an electro-forming process on the switching region formed on the transparent electrode layer during the passivation; And (f) forming a second contact electrode over the switching region.
  • passivation is performed to form a hole in which a portion of the transparent electrode layer is exposed in step (d), and a voltage is applied to the transparent electrode layer and the switching region exposed through the hole in step (e).
  • An electro-forming process may be performed in the switching region.
  • the first contact electrode is formed to be connected to the first contact electrode of the light emitting element adjacent in the first direction
  • the second contact electrode formed in the second direction orthogonal to the first direction is the light emitting element adjacent in the second direction It may be formed to be connected to the second contact electrode of the.
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state so that the switched on state can be maintained.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • a light emitting device display device manufacturing method for solving the above problems, (a) sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate; (b) etching the first semiconductor layer, the active layer, and the second semiconductor layer so that a plurality of light emitting devices are separated and a portion of the first semiconductor layer of each light emitting device is exposed to the outside; (c) forming a first contact electrode on a first semiconductor layer exposed to the outside of the plurality of light emitting devices, and forming a transparent electrode layer on the second semiconductor layer; (d) forming a switching device on the transparent electrode layer with a resistance change material and performing an electro-forming process on the switching device; And (f) forming a second contact electrode over the switching element.
  • an electro-forming process may be performed on the switching device by applying a voltage between the transparent electrode layer and the switching device.
  • the first contact electrode is formed to be connected to the first contact electrode of the light emitting element adjacent in the first direction
  • the second contact electrode formed in the second direction orthogonal to the first direction is the light emitting element adjacent in the second direction It may be formed to be connected to the second contact electrode of the.
  • a conductive filament is formed therein so that the state of the resistance change material is changed from a high resistance state to a low resistance state so that the switched on state can be maintained.
  • the switching element may be switched on with the conductive filament formed therein or the conductive filament formed therein disappearing according to the voltage applied between the first contact electrode and the second contact electrode.
  • the light emitting element display device of the present invention is a light emitting element adjacent by a plurality of first contact electrodes formed in parallel to each other in a first direction and a plurality of second contact electrodes formed in parallel to each other in a second direction perpendicular to the first direction. And a light emitting device array including a plurality of light emitting devices connected to each other.
  • a switching element or switching region made of a resistance change material is formed between the first contact electrode and the light emitting element or between the second contact electrode and the light emitting element, and is placed between the first contact electrode and the second contact electrode.
  • the present invention can drive the light emitting device array only by changing the resistance state of the switching element or the switching region by adjusting the voltage applied between the first contact electrode and the second contact electrode, thereby driving the display at low power and low cost. This solves the problem of thermal stability and misalignment of the bump metal generated by bonding the conventional light emitting device array onto the CMOS substrate in a flip chip method.
  • FIG. 1 is a view showing the overall structure of a light emitting device display device according to a first embodiment of the present invention.
  • FIG. 2 is a plan view showing the entire structure of a light emitting device display device according to a first embodiment of the present invention together with a drive circuit.
  • FIG 3 is a view for explaining a method of changing the state of the switching element and the switch region in accordance with a preferred embodiment of the present invention.
  • FIGS. 4A and 4B are views illustrating a manufacturing process of a light emitting device display device according to a first embodiment of the present invention.
  • 5A and 5B illustrate a manufacturing process of a light emitting device display apparatus according to a second exemplary embodiment of the present invention.
  • FIG. 6 is a diagram illustrating a manufacturing process of a light emitting device display device according to a modified embodiment of the second embodiment of the present invention.
  • FIG. 7 is a view showing a manufacturing process of a light emitting device display device according to a third embodiment of the present invention.
  • Figure 1 is a view showing the overall structure of a light emitting device display device according to a first embodiment of the present invention
  • Figure 2 is a drive circuit of the overall structure of the light emitting device display device according to a first embodiment of the present invention
  • 3 is a plan view illustrating a method of changing the states of the switching element 170 and the switching region according to an exemplary embodiment of the present invention.
  • a plurality of horizontal semiconductor light emitting devices are formed on a sapphire substrate 190 in a matrix form.
  • Each of the plurality of horizontal semiconductor light emitting devices shares an n-contact electrode (first contact electrode) 110a and a p-contact electrode (second contact electrode) 120a with adjacent semiconductor light emitting devices.
  • first contact electrode first contact electrode
  • second contact electrode second contact electrode
  • a plurality of first contact electrodes 110a formed in parallel to each other in a first direction are disposed, and a plurality of second formed in parallel to each other in a direction orthogonal to the first direction.
  • Contact electrodes 120a are disposed.
  • Each of the semiconductor light emitting devices included in the matrix may include light emitting devices arranged in a row in a first direction and share the first contact electrode 110a, and light emitting devices arranged in a row in a second direction may include a second contact electrode ( 120a).
  • each of the plurality of semiconductor light emitting devices may emit light according to a voltage applied to the first semiconductor layer 130 formed on the substrate 190 and a portion of the first semiconductor layer 130.
  • the first semiconductor layer 130 may be formed of an n-GaN layer doped with an n-type
  • the second semiconductor layer 150 may be formed of a p-GaN layer doped with a p-type
  • the active layer 140 Is formed of a multi-quantum well layer
  • the transparent electrode layer 160 may be formed of a transparent electrode material that can be generally used in semiconductor light emitting devices such as ITO and CNT.
  • the switching element 170 is formed of a resistance change material in a portion of the first semiconductor layer 130 where the active layer 140 is not formed, and the semiconductor light emitting elements adjacent to each other in the first direction on the switching element 170.
  • the shared first contact electrode 110a is formed.
  • Resistance change material is mainly used in the field of resistive RAM (ReRAM).
  • ReRAM resistive RAM
  • the resistive change material which is an insulator
  • a defect structure in the thin film is generated by an electrical stress (forming process), whereby the conductive filament 173 is formed inside the resistive change material, thereby lowering the resistance. It becomes a state. Thereafter, even when the voltage applied to the material is removed, the conductive filament 173 is maintained, and current flows through the conductive filament 173, so that the resistance state of the material is maintained in the low resistance state.
  • ReRAM applies the SET voltage to the conductive filament 173.
  • Program 1 by forming a and remove the programmed data by applying a RESET voltage to dissipate the conductive filaments 173.
  • the first drive circuit 210 controls switching to the plurality of first contact electrodes 110a and the second drive circuit 220 controls the plurality of second contact electrodes 120a, respectively.
  • the voltage and the light emitting device turn-on voltage are supplied.
  • the switching element 170 is formed of a resistance change material, and the first drive circuit 210 and the first contact circuit 110a and the second contact electrode 120a are formed.
  • the second drive circuit 220 forms a conductive filament 173 inside the switching element 170 by applying a SET voltage equal to or higher than a threshold voltage inherent to the resistance change material, thereby forming a “switched on” state, and the first contact electrode ( A RESET voltage is applied between 110a and the second contact electrode 120a to form a "switched off” state by removing the conductive filament 173 formed in the switching element 170.
  • the switching device 170 controls the turning on and off of the semiconductor light emitting device. Even when a light emitting device turn-on voltage is applied between the first contact electrode 110a and the second contact electrode 120a, the switching device 170 Is not turned on when is switched off, the light emitting device according to the voltage applied between the first contact electrode 110a and the second contact electrode 120a only when the switching device 170 is switched on. Is turned on.
  • the light emitting device display of the present invention can perform a function of storing an image. That is, the state of the switching element 170 is set to the switched on state or the switched off state for each of the plurality of light emitting elements, and light is emitted to the entirety of the plurality of first contact electrodes 110a and the plurality of second contact electrodes 120a.
  • the turn-on voltage of the device is applied, the light emitting device in which the switching device 170 is switched on is turned on to emit light, and the light emitting device in which the switching device 170 is switched off is maintained in the turned off state to emit light.
  • the output image is stored in the display device to store the plurality of first contact electrodes 110a and the plurality of images. Each time the voltage is applied to the entire second contact electrode 120a of the output. Therefore, such a light emitting device display is suitable for an advertisement image display that continuously displays the same advertisement image.
  • the resistance change material constituting the switching element 170 can be switched at a high speed in the same manner as the ReRAM, it is also possible to change the state of the switching element 170 to a high speed to display a video.
  • FIGS. 4A and 4B are views illustrating a manufacturing process of a light emitting device display device according to a first embodiment of the present invention.
  • FIGS. 4A and 4B the manufacturing process of the light emitting device display device according to the first exemplary embodiment of the present invention will be described.
  • the same process as the general light emitting device manufacturing process is applied to FIG. 4A (a).
  • the first semiconductor layer (n-GaN) 130, the active layer 140, and the second semiconductor layer (p-GaN) 150 are sequentially formed on the substrate 190.
  • the switching element 170 is formed by depositing a resistance change material on the exposed first semiconductor layer 130 ( Referring to FIG. 4A (c)), for each semiconductor light emitting device, an electro-forming process is performed by applying a voltage by contacting two electrodes of the IV meter to the switching device 170 and the first semiconductor layer 130, respectively.
  • an electro-forming process is performed by applying a voltage by contacting two electrodes of the IV meter to the switching device 170 and the first semiconductor layer 130, respectively.
  • a defect structure is formed inside the switching element 170, and the defect structures are interconnected to form conductive filaments 173 (see (d) of FIG. 4A).
  • the first contact electrode 110a is formed on the switching element 170, and the transparent electrode layer 160 is formed on the second semiconductor layer 150.
  • the first contact electrode 110a may be formed of a general n-contact electrode, and the transparent electrode layer 160 may be formed of ITO, CNT, etc., which are commonly used as transparent electrodes in semiconductor light emitting devices.
  • the first contact electrodes 110a are connected to and shared with the first contact electrodes 110a of adjacent light emitting devices in the same column in the first direction, as described above.
  • passivation materials 180a are filled between the plurality of semiconductor light emitting devices to the height of the transparent electrode layer 160 to protect each semiconductor light emitting device from the outside (see (f) of FIG. 4B), Finally, the second contact electrode 120a is formed on the transparent electrode layer 160 (see (g) of FIG. 4B). As described above, the second contact electrodes 120a are connected to and shared with the second contact electrodes 120a of adjacent light emitting devices in the same row in the second direction.
  • the light emitting device display device according to the first embodiment of the present invention has been described so far.
  • the switching portion of each semiconductor light emitting device is formed on the second semiconductor layer 150 instead of the first semiconductor layer 130. Except for the basic functions, the same as in the first embodiment.
  • FIGS. 5A and 5B a light emitting device display device and a manufacturing process thereof according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 5A and 5B.
  • a first semiconductor layer is formed on a substrate 190 as shown in FIG.
  • the (n-GaN) 130, the active layer 140, and the second semiconductor layer (p-GaN) 150 are sequentially formed.
  • a plurality of light emitting devices are separated from each other, and a mesa etching is performed to expose the first semiconductor layer 130 of each of the separated light emitting devices to the outside.
  • the first contact electrode 110b is formed on the exposed first semiconductor layer 130 (see (c) of FIG. 5A).
  • the transparent electrode layer 160 is formed on the second semiconductor layer 150 (see (d) of FIG. 5A).
  • the first contact electrode 110b is formed as a general n-contact electrode, and is connected to and shared with the first contact electrode 110b of adjacent light emitting devices in the same column in the first direction as described above.
  • passivation is performed until the transparent electrode layer 160 of the semiconductor light emitting device is covered (see FIG. 5B (e)).
  • the passivation region formed directly on the transparent electrode layer 160 is a switching region in which a conductive filament 183b is generated according to a voltage applied thereto so that the resistance state is changed to a low resistance state or the conductive filament 183b is extinguished to a high resistance state. (181b).
  • a second contact electrode 120b is finally formed on the switching region 181b (see (g) of FIG. 4B). As described above, the second contact electrodes 120b are connected to and shared with the second contact electrodes 120b of adjacent light emitting devices in the same row in the second direction.
  • the conductive filament 183b formed in the switching region 181b disappears and the switching region 181b is in a high resistance state. After that, after the turn-on voltage is applied between the first contact electrode 110b and the second contact electrode 120b, the light emitting device is not turned on.
  • FIG. 6 is a diagram illustrating a manufacturing process of a light emitting device display device according to a modified embodiment of the second embodiment of the present invention.
  • the variant embodiment shown in FIG. 6 differs only from the second embodiment shown in FIGS. 5A and 5B in the method of forming the conductive filaments in the switching region. Therefore, when explaining the difference, the transparent electrode layer 160 is formed on each of the plurality of light emitting devices by performing steps (a) to (d) of FIG. 5A, and as shown in FIG. 6H.
  • the passivation layer is formed of a resistance change material, but a hole for performing an electro-forming process is formed in a portion of the switching region 181b formed on the transparent electrode layer 160, and one electrode of the IV meter corresponds to the hole. And the other electrode contacts the surface of the switching region 181b, and then conducts an electro-forming process on the switching region 181b by applying a voltage to the conductive filament 183b. ) Can be formed.
  • the second contact electrode 120b may be formed on the passivation layer to complete the light emitting device display.
  • FIG. 7 is a view showing a manufacturing process of a light emitting device display device according to a third embodiment of the present invention.
  • the third embodiment of the present invention forms a separate switching element between the light emitting element and the second contact electrode.
  • the transparent electrode layer A switching element 170b is formed of a resistance change material over the 160, one electrode of the IV meter 400 contacts the switching element 170b, and the other electrode contacts the transparent electrode layer 160 to electro-forming.
  • the conductive filament 183d is formed in the switching element 170b.
  • the second contact electrode 120b is formed on the upper surface of the second contact electrode 120b to contact the switching device 170b.
  • the switch of the switching device 170b by applying a SET voltage or a RESET voltage between the first contact electrode 110b and the second contact electrode 120b for each light emitting device.
  • the state switch on / switch off
  • the turn-on voltage is applied when the switching element 170b is in the switched-on state
  • the corresponding light emitting element is turned on to generate light.

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Abstract

L'invention concerne un dispositif d'affichage électroluminescent et son procédé de fabrication. Selon l'invention, le dispositif d'affichage d'élément électroluminescent comporte un réseau d'éléments électroluminescents comprenant une pluralité d'éléments électroluminescents connectés à des éléments électroluminescents adjacents par une pluralité de premières électrodes de contact, formées parallèlement les unes aux autres dans une première direction, et par une pluralité de secondes électrodes de contact, formées parallèlement les unes aux autres dans une seconde direction orthogonale à la première direction. Dans la présente invention, un état de résistance (passant/non passant) de chaque élément ou région de commutation peut être modifié et stocké par formation d'un élément ou d'une région de commutation constitué d'un matériau à variation de résistance entre une première ou une seconde électrode de contact et un élément électroluminescent, et par réglage d'une tension à appliquer entre les première et seconde électrodes de contact. Par conséquent, le réseau d'éléments électroluminescents peut être commandé simplement par l'intermédiaire du changement d'un état de résistance d'un élément ou d'une région de commutation, par réglage d'une tension à appliquer entre les première et seconde électrodes de contact, ce qui permet à la fois à un dispositif d'affichage d'être commandé à faible puissance et à faibles coûts, et de palier les problèmes de stabilité thermique et de défaut d'alignement d'un métal à bosse qui surviennent lors de la liaison d'un réseau électroluminescent classique sur un substrat CMOS par un schéma de puce retournée.
PCT/KR2017/008011 2016-11-29 2017-07-25 Dispositif d'affichage électroluminescent et son procédé de fabrication WO2018101573A1 (fr)

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CN112002791A (zh) * 2020-07-31 2020-11-27 华为机器有限公司 Micro-LED芯片及其制作方法、显示面板
CN115917767A (zh) * 2020-07-16 2023-04-04 苏州晶湛半导体有限公司 半导体结构及其制作方法

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KR102549336B1 (ko) 2021-08-04 2023-06-28 고려대학교 산학협력단 마이크로 발광소자 디스플레이 장치 및 이의 구동 방법

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CN115917767A (zh) * 2020-07-16 2023-04-04 苏州晶湛半导体有限公司 半导体结构及其制作方法
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