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WO2018101437A1 - Multiplicateur à phase variable - Google Patents

Multiplicateur à phase variable Download PDF

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Publication number
WO2018101437A1
WO2018101437A1 PCT/JP2017/043162 JP2017043162W WO2018101437A1 WO 2018101437 A1 WO2018101437 A1 WO 2018101437A1 JP 2017043162 W JP2017043162 W JP 2017043162W WO 2018101437 A1 WO2018101437 A1 WO 2018101437A1
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WO
WIPO (PCT)
Prior art keywords
frequency
output
multiplier
reference signal
phase
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PCT/JP2017/043162
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English (en)
Japanese (ja)
Inventor
澄人 常木
章雄 福島
久保田　均
慎吾 田丸
Original Assignee
国立研究開発法人産業技術総合研究所
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Priority to JP2018554263A priority Critical patent/JP6826349B2/ja
Publication of WO2018101437A1 publication Critical patent/WO2018101437A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates generally to a frequency multiplier, and more specifically to a phase variable type frequency multiplier capable of changing the phase of a high frequency.
  • Communication technology using high frequencies has become increasingly important in recent years, and the technology is widely used in wireless communications in mobile phones, wireless LAN, satellite broadcasting, radar, etc. in use.
  • information is transmitted and received by replacing a signal to be transmitted with high-frequency amplitude, frequency, or phase modulation.
  • Non-Patent Document 1 a high-frequency oscillator using a magnetoresistive element (hereinafter referred to as “MR element”) exemplified in Patent Document 1 has been proposed.
  • MR element magnetoresistive element
  • the output frequency is not stable (the peak width is wide) similarly to the high frequency oscillator using the conventional resonator (VCO).
  • VCO conventional resonator
  • injection locking has been proposed (Non-Patent Document 1).
  • the output frequency of the MR element is stabilized (the peak width is narrowed).
  • This utilizes the phenomenon that the output frequency of the MR element becomes the same as the output frequency of the reference signal when the frequency difference between the frequency of the reference signal and the pre-synchronization frequency of the MR element is smaller than a predetermined bandwidth. . In this case, not only the frequency becomes the same, but also the frequency follows and synchronizes accurately, so that the output frequency of the MR element can be stabilized.
  • phase variable multiplier a phase variable frequency multiplier that can change the phase of a high frequency by using an MR element as a high frequency oscillator and utilizing injection locking. Is to provide.
  • the above injection locking not only improves the stability of the output frequency of the MR element (decreases the peak width), but can also arbitrarily control the phase difference ⁇ which is the above-mentioned problem.
  • arcsin is an arc sine function. Since the pre-synchronization frequency f MR of the MR element can be varied (controlled) by the applied voltage, magnetic field, temperature, etc., each frequency of the output of the reference signal and the output from the MR element is f by injection locking.
  • phase difference ⁇ between the two output high frequencies f is not necessarily the same as ⁇ . This is because the phase is shifted by passing through the signal line.
  • phase difference ⁇ between the two high frequencies to be output can be changed from the above equation (1).
  • a multiplier is a device that increases the frequency by 2 times, 3 times,..., But in the present invention, a device that reduces the frequency by 1/2, 1/3 times,. Call.
  • the high frequency having the frequency f multiplied by the multiplier is output (output 1), while the high frequency having the frequency f synchronized with the reference signal is output (output 2) from the MR element system.
  • the pre-synchronization frequency f MR of the MR element can be varied, the phase of the output 1 can be changed while the phase of the output 1 is stabilized.
  • the MR element can be changed to a predetermined (can be changed).
  • a phase difference ⁇ can be obtained.
  • the phase variable multiplier includes a multiplier that multiplies the frequency f ref of the reference signal by n times, and a pre-synchronization frequency f that is equal to or synchronizable with the frequency f after synchronization.
  • a magnetoresistive element that outputs a high frequency having MR and a bias voltage application mechanism for changing the frequency of the pre-synchronization frequency f MR are provided.
  • the frequency (1 / n) f which is 1 / n times the frequency f after synchronization (n is a natural number equal to or greater than 2) or the inverse thereof, is injected and synchronized with the magnetoresistive element as the frequency fref of the reference signal, thereby being multiplied.
  • the first high-frequency output having a frequency f that is n times the frequency f ref of the reference signal is output from the detector, and the second high-frequency output having the synchronized frequency f is output from the magnetoresistive element. Furthermore, the phase of the second high-frequency output can be changed with respect to the phase of the first high-frequency output by changing the pre-synchronization frequency f MR by the bias voltage application mechanism.
  • FIG. 1 is a diagram showing the configuration of a phase variable multiplier according to an embodiment of the present invention.
  • 1 includes a multiplier 1, an MR element 2, a bias voltage application mechanism 3, a first signal line 4, an output signal line 5, a coupling means 6, a bias tee (Bias Tee). ) 7 is included.
  • a circuit using a class B or class C amplifier, a variable capacitance diode, and a band pass filter is used as the multiplier 1.
  • the MR element 2 oscillates at a frequency f MR and outputs a high frequency.
  • MR elements are classified into a horizontal type, a vertical type and a magnetic vortex type depending on the direction of magnetization, and any of them can be used.
  • the MR element basically includes a free layer, a nonmagnetic layer, and a fixed layer.
  • the free layer and the fixed layer are made of a ferromagnetic material and are made of, for example, FeB or CoFeB.
  • the nonmagnetic layer is made of a nonmagnetic metal or an insulator, and is made of, for example, Cu, Ag, Cr or the like, or an oxide, nitride, halide or the like of Mg, Al, Si, Ca, Li or the like.
  • the MR element 2 when a direct current is passed from the free layer to the fixed layer or vice versa, the electron spin of the free layer is excited by the spin torque of the direct current, and the relative angle between the magnetization of the free layer and the fixed layer is the time. Resonates against. This resonance is converted into a high-frequency signal through the tunnel magnetoresistive effect or the giant magnetoresistive effect, and the MR element oscillates a high frequency (sometimes referred to as “output” in the present invention).
  • the bias voltage application mechanism 3 is required for operating the MR element 2 and changing the oscillation (output) frequency f MR .
  • the bias voltage application mechanism generally includes a bias voltage source and a signal line for voltage application. Since the MR element generally has a resistance of about 10 to 1 k ⁇ , it is necessary to apply a voltage of about 100 to 700 mV. Therefore, a DC power supply with a maximum output of 1 V and about 100 mA is desirable as the bias voltage source.
  • the reference signal source (details will be described later) and the multiplier 3 are electrically connected.
  • It is made of a conductive material such as gold, silver, copper, or aluminum. If a semiconductor manufacturing technique is used, it can be formed with a line width of nm to ⁇ m level. However, in the laboratory, it is convenient to use a copper stranded wire or a coaxial cable. Although expressed as “line”, it is conceptual and may have a finite size.
  • the output signal line 5 electrically connects the output terminal of the MR element 2 and the output terminal of the output 2 and, like the first signal line, a conductive material such as gold, silver, copper, aluminum or the like. Made with. In the laboratory, it is convenient to use a copper stranded wire or a coaxial cable. Also in this case, it is expressed as “line”, but it is conceptual and may have a finite size.
  • the coupling means 6 electrically connects a reference signal source (described later in detail) and the MR element 2.
  • the first signal line 4 is made of a conductive material such as gold, silver, copper, or aluminum.
  • FIG. 1 shows a line connecting the first signal line 4 and the output signal line 5, this is also conceptual and may have a finite size depending on the case.
  • the bias tee (Bias Tee) 7 generally comprises a capacitor and a coil, and is used to superimpose a DC signal (here, a bias voltage) on the AC signal. If a DC signal may be applied to the reference signal side, output 1 and output 2, the bias tee 7 may not be used and a bias voltage may be applied directly to the MR element 2.
  • FIG. 2 is a diagram showing a configuration of a phase variable multiplier according to another embodiment of the present invention.
  • An amplifier 8 and a filter 14 on the output signal line 5 and a magnetic field applying mechanism 13 to the MR element 2 are further added. Only these added means will be described below.
  • the other configurations that are the same as those in FIG. 1 have already been described above, and a description thereof will be omitted.
  • the reference signal source 12 outputs a reference signal having a high frequency fref .
  • the frequency f ref of the reference signal is selected to be equal to 1 / n times the post-synchronization frequency f (n is a natural number of 2 or more or its inverse).
  • n is preferably 2 to 12, or 1/12 to 1/2.
  • n is preferably 2.
  • a voltage controlled oscillator (VCO) for example, a voltage controlled oscillator (VCO), a phase locked loop (PLL) oscillator, a crystal (LC) oscillator, or the like is used.
  • the distributor 9 uses, for example, a resistance type three-port distributor shown in FIG. 4, and distributes the reference signal into two signals. Although it is close to a simple coupling point, the signal input from each port is divided into two and output to other ports. There is no signal directionality. The signal of port3 ⁇ port1 and the signal of port1 ⁇ port3 have the same output signal strength when coming out from port2. Since it is used for signal synthesis in addition to distribution, it is sometimes called a “distributor / synthesizer”.
  • the attenuator 10 is a device that attenuates a high-frequency signal shown in FIG. 5, for example. There is no signal directionality. The signal of port2 ⁇ port1 and the signal of port1 ⁇ port2 have the same output signal strength. In the configuration of FIG. 2, the MR element 2 is used because an excessive high frequency signal is not injected. The breakdown voltage of the MR element 2 is generally about 200 mV to 1 V. For this reason, if the injection locking input exceeds the above voltage, element destruction occurs. Therefore, it is necessary to adjust the input to the MR element 2 using an attenuator.
  • the directional coupler 12 is greatly different from a simple coupling point. For example, as shown in FIG. 6, a signal input from port 1 is output to port 3 with little attenuation. A signal of about ⁇ 14 dB of the signal input from port 1 flows into port 2 (just a little). The signal that enters from port 3 is output to port 1 with little attenuation. A signal of about ⁇ 28 dB (almost zero) of the signal input from port 3 flows to port 2. For this reason, since the directionality of a signal becomes important, it is called a directional coupler.
  • a transistor or a circuit using the transistor is used as the amplifier.
  • the filter 14 is appropriately provided with filters when unnecessary signals are input to the outputs 1 and 2 and others.
  • a filter 14 is inserted after the amplifier 8 so that the output 2 outputs only the signal (frequency f MR ) from the MR element 2.
  • This filter is not an actual actual device but is artificially inserted by signal analysis processing.
  • the filter includes a reflection type and an attenuation type. Here, the attenuation type is desirable.
  • the magnetic field applying mechanism 13 to the MR element 2 is additionally provided when the MR element 2 is operated by inputting a bias voltage (DC) and it is desired to change the output frequency f MR (and therefore the phase difference ⁇ ). Depending on the magnetic field, the MR element 2 can be easily operated, and the oscillation frequency f MR can be changed.
  • the magnetic field application mechanism 13 may be a permanent magnet, but is preferably an electromagnet that can easily change the magnetic field strength.
  • An electromagnet is a magnet that generates a magnetic force temporarily by energizing a coil around a core of a magnetic material, but here, there is no magnetic material (core). It can also be used as a mechanism.
  • phase variable multiplier of one embodiment of the present invention shown in FIG. 2 was mounted using the following devices, and the operation was confirmed.
  • MR element 2 the free layer is an FeB layer (thickness 2 nm), the nonmagnetic layer is an MgO layer (thickness 1 nm), and the fixed layer is CoFeB (thickness 3 nm) / Ru (thickness 0.86 nm) / A multilayer film made of CoFe (thickness 2.5 nm) / PtMn (thickness 15 nm) was used.
  • Bias voltage application mechanism 3 A Precision Source Measure Unit B2912A manufactured by Keysight Technologies with a minimum power source resolution of 100 nV was used.
  • Bias-Tee 7 A broadband Bias-Tee 11612A manufactured by Keysight Technologies Inc. having an insertion loss index of about 0.8 dB and a band of 45 MHz to 26.5 GHz was used.
  • Amplifier 8 A wideband amplifier ZVA-183W + manufactured by Mini-Circuits with an amplification factor of about 27 dB, a noise figure of 2.4 dB, and a band of 100 MHz to 18 GHz in the vicinity of the output frequency (6.7 GHz) of the MR element 2 was used.
  • Distributor 9 A wide-band resistive divider ZFRSC-183 + manufactured by Mini-Circuits with an insertion loss index of about 7 dB and a band of DC-18 GHz was used.
  • Attenuator 10 A broadband attenuator BW-K20-2W44 ++ manufactured by Mini-Circuits Inc.
  • Directional coupler 11 A coaxial directional coupler 87301D manufactured by Keysight Technologies was used.
  • Reference signal source 12 An analog signal generator E8257D manufactured by Keysight Technologies Inc. having an output power of ⁇ 135 dBm to +21 dBm and a band of 250 kHz to 40 GHz was used.
  • Filter 14 A 10-stage Butterworth high-pass filter with a cutoff frequency of 8 GHz was used.
  • FIG. 7 shows a signal flow in the embodiment of the variable phase multiplier using each of the above devices.
  • a reference signal having a frequency f / 2 (3.37 GHz) of 16 dBm is output from the reference signal source 12 and is equally distributed to two 10 dBm signals by the distributor 9.
  • One of the 10 dBm signals distributed by the distributor 9 is input to the multiplier 1.
  • the multiplier 1 operates and outputs a high-frequency signal having a frequency f (6.74 GHz) of 0 dBm to the output 1.
  • the other 10 dBm signal distributed by the distributor 9 passes through the attenuator 10, the directional coupler 11, and the Bias-tee 7 and is injected into the MR element 2 after the signal intensity is attenuated to about ⁇ 10 dBm. Injection locking occurs.
  • the MR element 2 outputs a high-frequency signal having a frequency f (6.74 GHz) of about ⁇ 30 dBm by the bias voltage from the bias voltage application mechanism 3.
  • the high frequency signal of the MR element 2 is amplified through the Bias-tee 7, the directional coupler 11, the amplifier 8, and the high pass filter 14, and a high frequency signal of ⁇ 17 dBm frequency f (6.74 GHz) is output to the output 2.
  • the signal branched by the directional coupler 11 through the attenuator 10 is amplified through the amplifier 8, and the frequency f / 2 of -11 dBm is obtained.
  • the high pass filter 14 Attenuates the ⁇ 11 dBm frequency f / 2 (3.37 GHz) high frequency signal. .
  • the signal of the MR element 2 passes through the directional coupler 11, the attenuator 10 and the distributor 9, and a high frequency signal of ⁇ 56 dBm frequency f (6.74 GHz) is input to the multiplier 1.
  • the signal is attenuated here and does not contribute to the output because the power is not reached.
  • FIG. 8 shows the results of measuring the output spectrum (especially the frequency and spectrum intensity of the output frequency f MR ) in the predetermined bias voltage range (200 to 230 mV around 215 mV) for the MR element 2 used as an example. Show. At this time, a magnetic field is applied to the MR element 2 using an electromagnet as the magnetic field applying mechanism 13. The magnitude of the magnetic field was 3 kOe, and the magnetic field was applied in a direction inclined at an elevation angle of 67 degrees with respect to the film surface and 120 degrees with respect to the fixed layer magnetization. The MR element 2 exhibits a unimodal output spectrum in the bias voltage range of 200 to 230 mV. The integrated output of the unimodal output spectrum has not changed.
  • FIG. 9 is obtained from the result of FIG. 8, and shows a change in the output frequency f MR (before synchronization) of the MR element 2 in a predetermined bias voltage range (200 to 230 mV around 215 mV). .
  • the output frequency f MR changes substantially monotonically (about 6.78 to about 6.68 GHz) around 6.72 GHz in the bias voltage range of 200 mV to 230 mV.
  • FIG. 10 shows the result of operating the example of the phase variable multiplier according to the embodiment of the present invention shown in FIG. 2 using the MR element 2 having the characteristics shown in FIGS.
  • the peak widths of the output spectrum of output 1 of (a) and output 2 of (b) were both as small as 6 kHz.
  • the peak width of the output 2 was as large as about 3 MHz.
  • FIG. 12 shows a change in the phase difference ⁇ between the output 1 (frequency f) from the multiplier 1 and the output 2 (frequency f) from the MR element in a predetermined bias voltage range (around 209 mV).
  • the phase difference ⁇ between the outputs 1 and 2 changed from ⁇ / 2 to + ⁇ / 2 with respect to the change in the bias voltage applied to the MR element 2.
  • the phase difference ⁇ between the outputs 1 and 2 can be changed without changing the frequency f between the outputs 1 and 2 by changing the bias voltage.
  • This phase variable type multiplier is small and inexpensive by using an MR element. Therefore, the multiplier of the present invention can be used for various communication devices.
  • Multiplier 2 MR element 3: Bias voltage application mechanism 4: First signal line 5: Output signal line 6: Coupling means 7: Bias Tee 8: Amplifier 9: Divider 10: Attenuator 11: Directional coupler 12: Reference signal source 13: Magnetic field applying mechanism 14: Filter (high-pass filter)

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Abstract

La présente invention concerne un multiplicateur à phase variable qui est pourvu : d'un multiplicateur qui multiplie une fréquence fref d'un signal de référence par un facteur de n ; d'un élément magnéto-résistif qui émet une onde haute fréquence d'une fréquence de pré-synchronisation fMR égale à une fréquence f après synchronisation ou pouvant être synchronisée avec ladite fréquence f ; d'un mécanisme d'application de tension de polarisation destiné à faire varier la fréquence de la fréquence de pré-synchronisation fMR. En tant que fréquence fref du signal de référence, une fréquence (1/n) f qui est (1/n) fois (n étant un nombre naturel supérieur ou égal à 2, ou un inverse de ce dernier) la fréquence f après synchronisation est verrouillée par injection dans l'élément magnéto-résistif. Ainsi, une première sortie d'onde haute fréquence d'une fréquence f qui est n fois la fréquence fref du signal de référence est émise par le multiplicateur, et une seconde sortie d'onde haute fréquence ayant une fréquence synchronisée f est émise par l'élément magnéto-résistif. En faisant varier la fréquence de pré-synchronisation fMR au moyen du mécanisme d'application de tension de polarisation, la phase de la seconde sortie d'onde haute fréquence peut être modifiée par rapport à la phase de la première sortie d'onde haute fréquence.
PCT/JP2017/043162 2016-12-02 2017-11-30 Multiplicateur à phase variable WO2018101437A1 (fr)

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JP2018554263A JP6826349B2 (ja) 2016-12-02 2017-11-30 位相可変型逓倍器

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JP2016234688 2016-12-02
JP2016-234688 2016-12-02

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194070A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置
JP2012105248A (ja) * 2010-11-09 2012-05-31 Samsung Electronics Co Ltd 発振器及び該発振器の動作方法
WO2016103688A1 (fr) * 2014-12-25 2016-06-30 株式会社デンソー Dispositif d'antenne et émetteur à hautes fréquences
WO2016175249A1 (fr) * 2015-04-30 2016-11-03 国立研究開発法人産業技術総合研究所 Circuit oscillateur haute fréquence à verrouillage de phase

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194070A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置
JP2012105248A (ja) * 2010-11-09 2012-05-31 Samsung Electronics Co Ltd 発振器及び該発振器の動作方法
WO2016103688A1 (fr) * 2014-12-25 2016-06-30 株式会社デンソー Dispositif d'antenne et émetteur à hautes fréquences
WO2016175249A1 (fr) * 2015-04-30 2016-11-03 国立研究開発法人産業技術総合研究所 Circuit oscillateur haute fréquence à verrouillage de phase

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