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WO2018196835A1 - Capteur magnétorésistif de position linéaire - Google Patents

Capteur magnétorésistif de position linéaire Download PDF

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Publication number
WO2018196835A1
WO2018196835A1 PCT/CN2018/084750 CN2018084750W WO2018196835A1 WO 2018196835 A1 WO2018196835 A1 WO 2018196835A1 CN 2018084750 W CN2018084750 W CN 2018084750W WO 2018196835 A1 WO2018196835 A1 WO 2018196835A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive
chip
permanent magnet
sensor chip
linear position
Prior art date
Application number
PCT/CN2018/084750
Other languages
English (en)
Chinese (zh)
Inventor
刘明峰
薛松生
Original Assignee
江苏多维科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Publication of WO2018196835A1 publication Critical patent/WO2018196835A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/022—Measuring gradient
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the invention belongs to the technical field of magnetic sensors, in particular to a magnetoresistive linear position sensor for detecting a linear position of a permanent magnet by a magnetoresistive sensing chip.
  • the position information to be measured is converted into a magnetic field that changes with the position by the permanent magnet, and the position information to be measured can be obtained by detecting the magnetic field by a Hall element or the like.
  • the magnetic field generated by the permanent magnet is very high and can be as high as several thousand Gauss. In this way, only a large number of Hall elements can be used.
  • AMR anisotropic magnetoresistance
  • GMR giant magnetoresistance
  • TMR Tunnel Magnetoresistance
  • the present invention provides a magnetoresistive linear position sensor.
  • a novel magnetoresistance linear position sensor comprising:
  • the magnetoresistive sensing chip comprising a magnetoresistive sensing element
  • one of the permanent magnet and the magnetoresistive sensor chip is fixedly disposed, and the other is movably disposed along a fixed motion path, the fixed motion path being a straight line;
  • the sensitive direction of the magnetoresistive sensor chip is a direction perpendicular to the fixed motion path
  • the magnetoresistive sensor chip is configured to sense a change of a magnetic field caused by a change in a relative position of the magnetoresistive sensor chip and the permanent magnet, and output a voltage signal that changes with a position, and convert the signal into a position by signal processing. information.
  • the magnetoresistive sensor chip is a TMR tunnel magnetoresistive sensor chip or a GMR giant magnetoresistive sensor chip.
  • the magnetization direction of the permanent magnet is a direction parallel to the z-axis
  • the sensitive direction of the magnetoresistive sensor chip is parallel to the x-axis or the y-axis in the xy plane.
  • the fixed motion path extends along the z-axis.
  • the magnetoresistive sensor chip is a gradient half-bridge magnetoresistive sensor chip, and the gradient half-bridge magnetoresistive sensor chip comprises two magnetoresistive sensing elements, and the two magnetoresistive sensing elements are symmetrically distributed in the Both sides of the magnetoresistive sensor chip.
  • the two magnetoresistive sensing elements are fabricated on a single chip by a semiconductor process, and the two magnetoresistive sensing elements are respectively movably disposed on the single chip to adjust the separation distance therebetween .
  • the magnetoresistive sensor chip is a gradient full-bridge magnetoresistive sensor chip, and the gradient full-bridge magnetoresistive sensor chip comprises four magnetoresistive sensing elements, and four magnetoresistive sensing elements are symmetrically distributed in the Both sides of the magnetoresistive sensor chip.
  • the four magnetoresistive sensing elements are fabricated on a single chip by a semiconductor process, and the magnetoresistive sensing elements are respectively movably disposed on the single chip to enable magnetoresistive sensing elements on both sides
  • the separation distance is adjustable.
  • the magnetoresistive linear position sensor further includes a fixing frame, one of the permanent magnet and the magnetoresistive sensing chip is fixedly disposed on the fixing frame, and the other can be fixed along the fixing frame
  • the moving path is movably disposed on the fixed frame.
  • the invention has the following beneficial effects:
  • the sensitive direction of the magnetoresistive sensing element is perpendicular to the direction of the fixed motion path such that it senses the magnetic field component of the magnetic field of the permanent magnet along a direction perpendicular to the fixed motion path, and the magnetic field component in a direction perpendicular to the fixed motion path Small, thus ensuring that the magnetoresistive sensor operates in an unsaturated zone, ensuring that it can work normally, overcoming space-limited close-range high-precision position measurement.
  • the magnetic field generated by the permanent magnet in the direction of the fixed motion path is too high and causes saturation. The problem.
  • the present invention has a magnetic field component of the X-axis and the Y-axis of the permanent magnet in the horizontal plane due to the in-plane X-axis and Y-axis directions of the sensitive axis, and the magnetic field components of the X-axis and the Y-axis in the horizontal plane are compared.
  • Small thus ensuring that the magnetoresistive sensor operates in an unsaturated region, ensuring that it can work normally, and overcoming the problem of saturation of the magnetic field Z component generated by the permanent magnet caused by the space-constrained close-range high-precision position measurement.
  • the invention adopts a gradient half bridge and a gradient full bridge design, has the ability to resist external magnetic field interference, and the work is more stable.
  • Figure 1 is a schematic view of a permanent magnet of a rectangular parallelepiped block structure
  • FIG. 2 is a magnetic line arrow diagram of a permanent magnet of a rectangular parallelepiped block structure on a XOZ cut surface
  • 3 is a graph showing the relationship between the z component Bz of the magnetic field generated on the four linear clusters at different X positions directly above the permanent magnet with the height z;
  • FIG. 4 is a graph showing the relationship between the magnetic field x component Bx and the height z of the four linear clusters of permanent magnets at different X positions directly above the permanent magnet;
  • Figure 5 is a schematic view of a magnetoresistive linear position sensor of the present invention.
  • Figure 6 (a) is a positional arrangement diagram of the gradient half-bridge magnetoresistive sensor chip
  • Figure 6 (b) is a schematic diagram of the electrical connection of the gradient half-bridge magnetoresistive sensor chip
  • Figure 7 (a) is a positional arrangement diagram of the gradient full bridge magnetoresistive sensor chip
  • Figure 7 (b) is a schematic diagram of electrical connections of a gradient full bridge magnetoresistive sensor chip.
  • the reference numerals are: 1- permanent magnet, 2-magnetoresistive sensor chip.
  • FIG. 1 is a schematic view of a permanent magnet of a rectangular parallelepiped block structure according to the present invention.
  • the magnetization direction of the permanent magnet is vertically downward.
  • the center point of the upper surface of the selected rectangular parallelepiped is the origin, as shown in FIG.
  • a spatial Cartesian coordinate system is created.
  • FIG. 2 is a magnetic line arrow diagram of a permanent magnet of a rectangular parallelepiped block structure on the XOZ cut surface.
  • the size of the permanent magnet is assumed to be 5 ⁇ 4 ⁇ 1 mm, and the material is the most commonly used N35 yttrium-iron rare earth permanent magnet material.
  • the magnetization direction of the permanent magnet is vertically downward.
  • the magnetic field lines are directed from the S pole of the upper surface to the N pole of the lower surface; outside the permanent magnet, the magnetic field lines are closed, and the N pole of the lower surface is outwardly bent and then returned to the upper surface.
  • the magnetic field line is vertically downwards directly above the permanent magnet; the magnetic lines on the left and right sides are symmetric about the YOZ plane of the center line of the permanent magnet; above the permanent magnet, the magnetic line on the left side is bent to the lower right back to the permanent magnet, right side The magnetic lines of force are deflected to the lower left to return to the permanent magnets.
  • the magnetic induction intensity z component Bz is symmetrically symmetrical around the permanent magnet
  • the magnetic induction intensity X component Bx is symmetrical, that is, equal in magnitude and opposite in direction.
  • the spatial symmetry of the permanent magnet the same property is present in the y-axis direction, so only the x-axis direction is analyzed below.
  • Fig. 3 is a graph showing the relationship between the z component Bz of the magnetic field generated by the permanent magnets on the four linear clusters at the different X positions directly above the permanent magnet as a function of the height z, as shown in Fig. 3, for different straight lines in the straight cluster, at X
  • the magnetic induction intensity z component Bz decreases with increasing height z, and reaches 800 Gs or more in the range of 0 to 1.5 mm, which far exceeds the current GMR/TMR magnetoresistive sensor.
  • the saturation field makes the GMR/TMR magnetoresistive sensor chip inoperable.
  • the Hall element having the z-axis sensitivity direction can be used to detect the z component of the magnetic field as a function of the height z, and the relative position of the permanent magnet with respect to the Hall element can be obtained by subsequent signal analysis processing. Since the noise level of the Hall element itself is relatively high, the resolution of the linear position detection is relatively low.
  • Fig. 4 is a graph showing the relationship between the magnetic field x component Bx and the height z of the four linear clusters of permanent magnets at different X positions directly above the permanent magnet, as shown in Fig. 4, where X is 0, 0.6, 1.2, 1.8.
  • the different straight lines in the straight line cluster at mm, the magnetic induction intensity x component Bx is always equal to zero for the straight line in the linear cluster, that is, for the vertical straight line passing through the positive center of the permanent magnet, the magnetic field lines generated by the permanent magnet are perpendicular to the upper surface of the permanent magnet Without the horizontal x component, the same y component is also zero.
  • the magnetoresistive sensing chip can be operated in the monotonically decreasing segment of Bx by the distance z between the magnetoresistive sensing chip and the permanent magnet and the distance x from the center of the permanent magnet.
  • FIG. 5 is a schematic diagram of a novel magnetoresistive linear position sensor including a permanent magnet 1, a magnetoresistive sensor chip 2, and a fixed frame necessary for practical application of the sensor (not shown). Out).
  • a relative motion occurs between the permanent magnet 1 and the magnetoresistive sensing chip 2, and the relative distance z changes.
  • the permanent magnet 1 can be fixedly disposed on the fixed frame according to different actual conditions, and the magnetoresistive sensor chip 2 can be disposed on the fixed frame by moving up and down;
  • the magnetoresistive sensor chip 2 is fixedly disposed on the fixed frame, and the permanent magnet 1 is disposed on the fixed frame by moving up and down.
  • one of the permanent magnet 1 and the magnetoresistive sensor chip 2 moves up and down along a fixed motion path which is a straight line extending along the z-axis, and the sensitive direction of the magnetoresistive sensor chip 2 is Vertical to the z-axis.
  • the permanent magnet 1 may have a different shape such as a rectangular parallelepiped, a cube, a thin cylinder or the like.
  • the magnetoresistive sensor chip may be a gradient half-bridge magnetoresistive sensor chip or a gradient full-bridge magnetoresistive sensor chip, and the gradient half-bridge magnetoresistive sensor chip and the gradient full-bridge magnetoresistive sensor chip are respectively taken as an example.
  • the magnetoresistive linear position sensor of the invention is described in detail.
  • the gradient half-bridge magnetoresistive sensor chip includes two magnetoresistive sensing elements fabricated on a single chip by a semiconductor process, and the sensing directions of the two magnetoresistive sensing elements are in the xy plane. In the horizontal x direction, the distance between the two magnetoresistive sensing elements is 1, symmetrically distributed on the left and right sides of the magnetoresistive sensor chip, and the two magnetoresistive sensing elements are also distributed in the y-axis direction near the x-axis.
  • the two magnetoresistive sensing elements are respectively movably disposed on the single chip to adjust the separation distance l therebetween.
  • the electrical connection of the two magnetoresistive sensing elements is shown in Figure 6(b).
  • the gradient half-bridge magnetoresistive chip is placed directly above the permanent magnet, as shown in Figure 5.
  • the two magnetoresistive sensing elements respectively sense the magnetic field Bx component of the permanent magnet generated in a direction opposite to the distance z, and output a voltage related to the distance z.
  • the two magnetoresistive sensing elements sense the same magnetic field and have no output.
  • the magnetic induction intensity x component Bx generated by the permanent magnet sensed by the magnetoresistive sensing chip can be changed by changing the distance l to adapt to different permanent magnet sizes.
  • the gradient full-bridge magnetoresistive sensor chip includes four magnetoresistive sensing elements fabricated on a single chip by a semiconductor process, and the sensing directions of the four magnetoresistive sensing elements are in the xy plane. In the horizontal x direction, the distance between the two magnetoresistive sensing elements on the left side and the two magnetoresistive sensing elements on the right side is l, symmetrically distributed on the left and right sides of the magnetoresistive sensing chip.
  • the two sensing elements are symmetrically distributed in the y-axis direction in the vicinity of the x-axis, and the magnetoresistive sensing elements are respectively movably disposed on the single chip to make the magnetoresistive sensing elements on both sides
  • the separation distance l is adjustable.
  • the electrical connection of the four magnetoresistive sensing elements is shown in Figure 7(b).
  • the gradient full-bridge magnetoresistive chip is placed directly above the permanent magnet, as shown in Figure 5.
  • the relative motion between the magnetoresistive sensing chip and the permanent magnet occurs, and the four magnetoresistive sensing elements R1/R3 and R2/R4 respectively sense the magnetic field Bx component of the direction of the permanent magnet generated by the distance z, and output The voltage associated with the distance z.
  • the magnetic fields induced by the four magnetoresistive sensing elements R1/R2/R3/R4 are the same, and there is no output.
  • the magnetic induction intensity x component Bx generated by the permanent magnet sensed by the magnetoresistive sensing chip can be changed by changing the distance l to adapt to different permanent magnet sizes.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

La présente invention concerne un capteur magnétorésistif de position linéaire comprenant un aimant permanent (1) et une puce de capteur magnétorésistif (2); l'aimant permanent (1) ou la puce de capteur magnétorésistif (2) est fixe; l'aimant permanent (1) et la puce de capteur magnétorésistif (2) sont en mouvement relatif le long d'un trajet de mouvement fixe; la direction de sensibilité de la puce de capteur magnétorésistif (2) est une direction perpendiculaire au trajet de mouvement fixe; la puce de capteur magnétorésistif (2) détecte un changement de champ magnétique provoqué par un changement des positions relatives de la puce de capteur magnétorésistif (2) et de l'aimant permanent (1), délivre un signal de tension changeant avec la position et le convertit en informations de position au moyen d'un traitement de signal.
PCT/CN2018/084750 2017-04-27 2018-04-27 Capteur magnétorésistif de position linéaire WO2018196835A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201720453186.5 2017-04-27
CN201720453186.5U CN207007092U (zh) 2017-04-27 2017-04-27 一种磁电阻线性位置传感器

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WO2018196835A1 true WO2018196835A1 (fr) 2018-11-01

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207007092U (zh) * 2017-04-27 2018-02-13 江苏多维科技有限公司 一种磁电阻线性位置传感器
CN112014778B (zh) * 2020-08-24 2023-11-07 歌尔微电子有限公司 微机电系统磁阻传感器、传感器单体及电子设备
CN112902817B (zh) * 2021-02-08 2022-11-08 经登企业股份有限公司 磁性线性位置感应器
CN112902818B (zh) * 2021-02-08 2022-11-08 经登企业股份有限公司 磁性线性位置感应器的校正方法
CN113894618B (zh) * 2021-11-03 2023-03-24 上海市高级技工学校 一种磁式非接触式探针系统、探针及测量方法

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US20020101233A1 (en) * 2001-01-30 2002-08-01 Mitsubishi Denki Kabushiki Kaisha Magnetic detection apparatus
US20040263157A1 (en) * 2003-06-30 2004-12-30 Alps Electric Co., Ltd Angle sensor having low waveform distortion
CN1930451A (zh) * 2004-03-11 2007-03-14 罗伯特·博世有限公司 磁传感器装置
CN102954807A (zh) * 2011-08-19 2013-03-06 英飞凌科技股份有限公司 磁性位置传感器、系统和方法
CN204740297U (zh) * 2015-06-01 2015-11-04 无锡乐尔科技有限公司 电磁辐射测量模块
CN204807685U (zh) * 2015-06-25 2015-11-25 无锡乐尔科技有限公司 磁头
US20160265895A1 (en) * 2015-03-12 2016-09-15 International Business Machines Corporation Sensor arrangement for position sensing
CN207007092U (zh) * 2017-04-27 2018-02-13 江苏多维科技有限公司 一种磁电阻线性位置传感器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020101233A1 (en) * 2001-01-30 2002-08-01 Mitsubishi Denki Kabushiki Kaisha Magnetic detection apparatus
US20040263157A1 (en) * 2003-06-30 2004-12-30 Alps Electric Co., Ltd Angle sensor having low waveform distortion
CN1930451A (zh) * 2004-03-11 2007-03-14 罗伯特·博世有限公司 磁传感器装置
CN102954807A (zh) * 2011-08-19 2013-03-06 英飞凌科技股份有限公司 磁性位置传感器、系统和方法
US20160265895A1 (en) * 2015-03-12 2016-09-15 International Business Machines Corporation Sensor arrangement for position sensing
CN204740297U (zh) * 2015-06-01 2015-11-04 无锡乐尔科技有限公司 电磁辐射测量模块
CN204807685U (zh) * 2015-06-25 2015-11-25 无锡乐尔科技有限公司 磁头
CN207007092U (zh) * 2017-04-27 2018-02-13 江苏多维科技有限公司 一种磁电阻线性位置传感器

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