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WO2018194153A1 - Module semi-conducteur de puissance, composant électronique et procédé de production de module semi-conducteur de puissance - Google Patents

Module semi-conducteur de puissance, composant électronique et procédé de production de module semi-conducteur de puissance Download PDF

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Publication number
WO2018194153A1
WO2018194153A1 PCT/JP2018/016263 JP2018016263W WO2018194153A1 WO 2018194153 A1 WO2018194153 A1 WO 2018194153A1 JP 2018016263 W JP2018016263 W JP 2018016263W WO 2018194153 A1 WO2018194153 A1 WO 2018194153A1
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Prior art keywords
capacitor
conductor pattern
power semiconductor
semiconductor module
metal terminal
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PCT/JP2018/016263
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English (en)
Japanese (ja)
Inventor
辰則 柳本
堀口　剛司
賢太 中原
裕二 宮崎
康貴 清水
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三菱電機株式会社
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Priority to JP2019513697A priority Critical patent/JP6755386B2/ja
Priority to CN201880020955.XA priority patent/CN110494977B/zh
Publication of WO2018194153A1 publication Critical patent/WO2018194153A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power semiconductor module, an electronic component, and a method for manufacturing a power semiconductor module.
  • a power semiconductor device that constitutes a power converter has a structure including switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and free-wheeling diodes.
  • IGBTs Insulated Gate Bipolar Transistors
  • MOSFETs Metal-Oxide-Semiconductor Field Effect Transistors
  • free-wheeling diodes free-wheeling diodes.
  • an IGBT made of silicon (Si) is used as a switching element, and a pin diode is used as a free-wheeling diode.
  • SiC silicon carbide
  • SiC has a dielectric breakdown strength as high as about 10 times that of Si, and the thickness of the drift layer can be reduced to about 1/10 of a semiconductor element made of Si, a low on-voltage is expected. Furthermore, since a semiconductor element using SiC can operate even at high temperatures, application of SiC as a material for a power semiconductor element reduces the size compared to a conventional power semiconductor device using Si. High efficiency can be realized.
  • Snubber circuit is one of the means to suppress ringing.
  • a conventional power semiconductor module disclosed in Japanese Patent Laid-Open No. 2013-222950 includes a snubber capacitor as a means for suppressing ringing.
  • a capacitor used in a snubber circuit for example, in Japanese Patent Application Laid-Open No. 11-233373 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2015-8270 (Patent Document 3), a thermal shock that a ceramic capacitor receives due to a temperature change is disclosed. Therefore, a ceramic capacitor having a structure in which a terminal member made of a metal plate is soldered to a terminal electrode of a capacitor body is disclosed.
  • JP 2013-222950 A JP-A-11-233373 Japanese Patent Laid-Open No. 2015-8270
  • Patent Document 1 In the power semiconductor module disclosed in Patent Document 1, a printed board (upper board) and an insulating board (lower board) on which a semiconductor element is placed are connected in a circuit via a snubber capacitor. The lower substrate and the capacitor are soldered together.
  • the structure disclosed in Patent Document 1 uses two substrates and is very complicated, and the manufacturing method is complicated. For this reason, there is a problem that the reliability of the solder joint between the snubber capacitor and the substrate cannot be ensured during mounting of the power semiconductor module and during use after mounting.
  • the present invention has been made in order to develop the above-described problems, and provides a power semiconductor module that can suppress ringing that occurs during switching operation of a switching element and has high reliability. Objective.
  • the power semiconductor module includes at least one semiconductor element, a conductor pattern, at least one snubber circuit, a sealing body, an intermediate member, and a bonding material.
  • At least one semiconductor element is connected to the conductor pattern.
  • At least one snubber circuit is electrically connected to the conductor pattern.
  • At least one snubber circuit is a circuit in which a capacitor and a resistor are connected in series.
  • the sealing body seals at least one semiconductor element, conductor pattern, capacitor, and resistor.
  • the intermediate member is connected to the capacitor.
  • the bonding material connects the intermediate member to the conductor pattern.
  • the intermediate member connected to the capacitor is used at the junction between the capacitor and the conductor pattern, the junction between the conductor pattern and the capacitor can be easily mounted, and the junction is formed with high reliability. be able to. For this reason, ringing can be suppressed by the snubber circuit, and the occurrence of problems caused by defects in the junction between the capacitor and the conductor pattern can be suppressed. As a result, a highly reliable power semiconductor module can be obtained.
  • FIG. 5 is a schematic top view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG. 2.
  • FIG. 4 is an equivalent circuit diagram of a modification of the capacitor mounting portion shown in FIG. 3.
  • FIG. 3 is a schematic diagram illustrating a top surface and a cross section of a configuration example of a capacitor mounting portion of the power semiconductor module illustrated in FIG. 2. It is a schematic diagram which shows the cross section of the structural example of the resistor mounting part of the power semiconductor module shown in FIG.
  • FIG. 1 It is a schematic diagram which shows the cross section of the modification of the resistor mounting part of the power semiconductor module shown in FIG. It is a schematic diagram which shows the cross section of the modification of the semiconductor module for electric power which concerns on Embodiment 1 of this invention. It is a schematic diagram which shows the cross section of the semiconductor module for electric power which concerns on the modification of Embodiment 1 of this invention. It is a schematic diagram which shows the partial cross section of the semiconductor module for electric power which concerns on Embodiment 2 of this invention. It is a schematic diagram which shows the cross section of the capacitor
  • FIG. 1 is a schematic diagram showing a power conversion circuit in the power conversion device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram showing a cross section and a part of the upper surface of the power semiconductor module according to the first embodiment of the present invention.
  • FIG. 5 is a schematic diagram illustrating a top surface and a cross section of the capacitor mounting portion of the power semiconductor module illustrated in FIG. 2.
  • 6 is a schematic diagram showing a cross section of the resistor mounting portion of the power semiconductor module shown in FIG.
  • the power semiconductor module according to this embodiment will be described with reference to FIGS.
  • the power conversion device is composed of one power semiconductor module 101 and drives the motor 102.
  • the power semiconductor module 101 three legs 105 a, 105 b, and 105 c are connected in parallel to the power supply 30.
  • Each leg 105a, 105b, 105c includes a positive-side switching element 103P, a positive-side reflux diode 104P, a negative-side switching element 103N, and a negative-side reflux diode 104N, respectively.
  • the positive-side switching element 103P and the positive-side reflux diode 104P that are connected in reverse parallel to each other constitute a positive-side power semiconductor element.
  • the negative-side switching element 103N and the negative-side return diode 104N connected in reverse parallel to each other constitute a negative-side power semiconductor element.
  • the midpoint, which is the connection point between the positive power semiconductor element and the negative power semiconductor element of each leg 105a, 105b, 105c, is connected to the motor 102, respectively.
  • the positive power semiconductor element and the negative power semiconductor element correspond to an example of at least one semiconductor element according to the present embodiment.
  • the snubber circuit 106 is connected in parallel to the series circuit of the positive power semiconductor element and the negative power semiconductor element.
  • the snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series.
  • the snubber circuit 106 is arranged only in the leg 105c.
  • the snubber circuit 106 may be arranged in another leg 105a, 105b, or any one of the legs 105a to 105c.
  • the snubber circuit 106 may be arranged in one, or the snubber circuit 106 may be arranged in each of all the legs 105a to 105c.
  • SiC-MOSFET as the positive electrode side switching element 103P and the negative electrode side switching element 103N (hereinafter also simply referred to as switching element), and SiC as the positive electrode side freewheeling diode 104P and negative electrode side freewheeling diode 104N (hereinafter also simply referred to as the freewheeling diode).
  • switching element SiC-MOSFET as the positive electrode side switching element 103P and the negative electrode side switching element 103N
  • SiC as the positive electrode side freewheeling diode 104P and negative electrode side freewheeling diode 104N
  • ringing may occur during a switching operation.
  • the ringing is caused by resonance due to the parasitic inductance of the power conversion circuit and the capacitance of the SBD.
  • Such ringing may cause damage to the module when the peak value of the voltage exceeds the rated voltage of the power semiconductor module.
  • the voltage in ringing can cause noise, it is necessary to suppress ringing as much as possible.
  • a snubber circuit 106 is installed in the power converter shown in FIG.
  • the snubber circuit 106 is mounted between the positive electrode of the positive power semiconductor element and the negative electrode of the negative power semiconductor element.
  • FIG. 2 shows a cross-section and a part of the upper surface of an example of the power conversion device in which the power conversion circuit shown in FIG. 1 is mounted.
  • the upper side of FIG. 2 shows a cross section of the power converter, and the lower side of FIG. 2 shows a part of the upper surface of the power converter.
  • the power conversion device according to the present embodiment mainly includes a base plate 201, a base insulating substrate 203, a semiconductor element 204, a snubber circuit, and a case 202.
  • the snubber circuit includes a capacitor 209 that is a ceramic capacitor and a resistor 210.
  • the base insulating substrate 203 mainly includes a plate-shaped insulating material 203b, conductor patterns 203a and 203d to 203h formed on the top surface of the insulating material 203b, and a conductor pattern 203c formed on the back surface of the insulating material 203b.
  • the semiconductor element 204 includes a SiC-MOSFET as the switching element 204a and a SiC-SBD as the freewheeling diode 204b.
  • the switching element 204a may be the positive electrode side switching element 103P or the negative electrode side switching element 103N in FIG.
  • the freewheeling diode 204b may be the positive electrode side freewheeling diode 104P or the negative electrode side freewheeling diode 104N in FIG.
  • the base insulating substrate 203 is joined to the upper surface of the base plate 201 with solder 207b (under-substrate solder). Specifically, the solder 207 b is in contact with the conductor pattern 203 c on the back surface side of the base insulating substrate 203 and the upper surface of the base plate 201.
  • a semiconductor element 204 is joined to the upper surface of the base insulating substrate 203 by solder 207a (under-chip solder).
  • the semiconductor element 204 and the terminal 208 installed in the case 202 are connected by a wiring member 206. Specifically, the wiring member 206 connected to the terminal 208 shown in FIG. 2 is connected to the conductor pattern 203h and the switching element 204a.
  • another wiring member 206 connected to, for example, the source electrode of the switching element 204a is connected to the reflux diode 204b and the conductor pattern 203d.
  • Another wiring member 206 connects the conductor pattern 203 g and the terminal 208.
  • the capacitor 209 and the resistor 210 are placed on the upper surface of the base insulating substrate 203 and connected in series. Specifically, the resistor 210 is disposed so as to connect the conductor pattern 203d and the conductor pattern 203e.
  • the conductor pattern 203e is connected to one electrode of the capacitor 209.
  • a conductor pattern 203f different from the conductor pattern 203e and the electrode on the other side of the capacitor 209 are connected. That is, the capacitor 209 is disposed so as to connect the conductor pattern 203e and the conductor pattern 203f.
  • the capacitor 209 and the resistor 210 are connected in series via the conductor pattern 203e.
  • the conductor pattern 203a is a positive electrode side drain electrode on which the semiconductor element 204 is mounted.
  • the withstand voltage of the capacitor 209 should be selected according to the rated voltage of the power semiconductor device. However, it is desirable that the capacitor 209 has a breakdown voltage equal to or higher than the rated voltage of the power semiconductor device.
  • ceramic capacitors may be connected in series to ensure the withstand voltage with a plurality of ceramic capacitors. At this time, the electrical characteristics of the plurality of capacitors 209 are preferably substantially the same. That is, as shown in the lower plan view of FIG. 2, the independent conductor pattern 203e, conductor pattern 203f, and conductor pattern 203g may be connected in series by the capacitor 209. Although not shown, the conductor pattern 203g is connected to the drain electrode on the negative electrode side.
  • a multilayer ceramic capacitor is assumed as an example of the capacitor 209. However, it has the function of accumulating and discharging electrostatic charges, which is the original function of a capacitor, and if it has sufficient capacitance and withstand voltage for use, a capacitor of any other configuration is used. be able to.
  • the capacitor 209 a thin film capacitor in which high dielectric constant materials are stacked may be used. Such a thin film capacitor can be formed by utilizing, for example, semiconductor manufacturing technology.
  • FIG. 3 is a top schematic view of a modification of the capacitor mounting portion of the power semiconductor module shown in FIG.
  • FIG. 4 is an equivalent circuit diagram of the capacitor mounting portion shown in FIG.
  • two capacitors 209 a and 209 b are mounted on the snubber circuit board 230.
  • three resistors 233a, 233b, and 210 are mounted on the snubber circuit board 230.
  • the snubber circuit substrate 230 includes a ceramic substrate 230a, conductor patterns 230c, 230d, 230e, and 230f disposed on the surface of the ceramic substrate 230a, and a conductor pattern (not shown) disposed on the back side of the ceramic substrate 230a. ).
  • the conductor patterns 230c, 230d, 230e, and 230f are disposed on the surface of the ceramic substrate 230a at a distance from each other.
  • the conductor patterns 230c, 230d, 230e, and 230f are arranged so as to extend substantially parallel to each other.
  • the conductor pattern 230f is electrically connected to the conductor pattern disposed on the back side of the ceramic substrate 230a through the through hole 232.
  • a plurality of through holes 232 are formed.
  • the capacitor 209a connects the conductor pattern 230c and the conductor pattern 230d.
  • the capacitor 209b connects the conductor pattern 230d and the conductor pattern 230e.
  • the resistor 233a connects the conductor pattern 230c and the conductor pattern 230d.
  • the resistor 233b connects the conductor pattern 230d and the conductor pattern 230e.
  • the resistor 210 connects the conductor pattern 230e and the conductor pattern 230f. As can be seen from FIG. 4, the two capacitors 209a and 209b and the resistor 210 are connected in series.
  • the resistor 233a is connected in parallel with the capacitor 209a.
  • the resistor 233b is connected in parallel with the capacitor 209b.
  • resistors 233a and 233b serving as voltage dividing resistors are connected in parallel to the capacitors 209a and 209b in order to evenly divide the voltages to the capacitors 209a and 209b.
  • the resistors 233a and 233b serving as voltage dividing resistors are resistors having a resistance value 1000 times or more that of the resistor 210 connected in series to the capacitors 209a and 209b.
  • the electrical characteristics of the resistors 233a and 233b, which are voltage-dividing resistors connected in parallel to the plurality of capacitors 209a and 209b, are substantially the same.
  • a case 202 is attached along the outer periphery of the base plate 201.
  • the inside of the case 202 is filled with a sealing body 205 so as to cover a part of the base plate 201, the base insulating substrate 203, the semiconductor element 204, the capacitor 209, the resistor 210, the wiring member 206, and the terminal 208.
  • the case 202 may be made of any resin, and is made of, for example, polyphenyl sulfide resin (PPS), polybutylene terephthalate resin (PBT), or polyethylene terephthalate resin (PET).
  • the insulating material 203b of the base insulating substrate 203 is not only a ceramic material such as alumina (Al 2 O 3 ), aluminum nitride (AlN), and silicon nitride (Si 3 N 4 ), but also a binder material such as an epoxy material or a liquid crystal polymer.
  • An organic insulating layer in which fillers such as silica, alumina, and boron nitride (BN) are kneaded may be used.
  • the conductor pattern 203a and the conductor pattern 203c are, for example, copper (Cu) films, but the surface of the copper film may be subjected to nickel (Ni) plating or silver (Ag) plating.
  • the conductor pattern 203a and the conductor pattern 203c may be those in which the surface of an aluminum (Al) film is subjected to Ni plating or Ag plating.
  • the semiconductor element 204 uses an SiC-MOSFET as the switching element 204a and an SiC-SBD as the freewheeling diode 204b.
  • the silicon (Si) -based Si-IGBT (Insulated Gate Bipolar Transistor) and Si-FWD (Free Wheeling Diode). ) May be used as the switching element 204a and the return diode 204b, respectively.
  • the wiring member 206 disposed on the semiconductor element 204 is, for example, an Al wire, and is joined to the surface of the semiconductor element 204 by wedge bonding. However, the wiring member 206 may be conductive, and for example, a Cu wire may be used.
  • the wiring member 206 may be a plate material instead of a wire shape.
  • a joining method different from wedge bonding may be used.
  • the wiring member 206 and the semiconductor element 204 are joined by solder, an adhesive containing Ag, or an Ag sintered material. You may do it.
  • the under-chip solder 207a is, for example, a solder material based on Sn, but the conductor pattern 203a on the surface side of the base insulating substrate 203 and the semiconductor element 204 may be joined by an Ag sintered material.
  • the sealing body 205 is, for example, silicon gel, but may have an insulating property sufficient for use of the power semiconductor module, and an epoxy material in which a filler is kneaded may be used as the sealing body 205.
  • the capacitor 209 and the conductor patterns 203e and 203f are connected by a solder joint portion 211. It is efficient and preferable that the solder joint portion 211 is formed at the same time in a process in which the semiconductor element 204 is soldered to the conductor pattern 203a or a process in which the base insulating substrate 203 is soldered to the base plate 201. Details of the soldering method will be described below.
  • soldering power modules there are concerns about voids and solder scattering (solder balls) due to the flux contained in the solder paste material, so it is common to apply a solder paste material containing flux. Few. Therefore, in soldering a semiconductor element, a soldering method in which solder is melted while reducing a solder material in a reducing atmosphere may be applied. When the soldering method under the reducing atmosphere is employed, a plate-like solder material is placed on the conductor pattern, and a semiconductor element is placed on the solder material to perform soldering. When the capacitor 209 is soldered to the same surface as the semiconductor element 204 on the base insulating substrate 203, soldering at the same time as the semiconductor element 204 does not increase the number of steps by mounting the capacitor 209, which is very efficient. Is.
  • a plate-like solder material is placed on the conductor pattern, and a soldered portion of the capacitor 209 is placed on the solder material.
  • the capacitor 209 is placed on the conductor patterns 203e and 203f, and a rectangular or spherical solder material is placed in the vicinity thereof.
  • the capacitor 209 is soldered by melting and spreading the solder material.
  • a member made of a solder resist or the like may be printed on the conductor patterns 203e and 203f in advance in order to limit the area where the solder spreads.
  • the method of mounting the capacitor 209 at the same time as the semiconductor element 204 has been described. However, when the base insulating substrate 203 is soldered to the base plate 201, the capacitor 209 is connected to the conductor patterns 203e and 203f by the same type of method. Also good.
  • the capacitor 209 has a density of about 2 g / cm 3 or more and 6 g / cm 3 or less, depending on the size and the number of built-in electrodes. At the time of soldering, the melted solder is pushed out from the region immediately below the capacitor 209 due to its own weight, and the thickness of the solder joint portion 211 is reduced. In addition, if the electrostatic capacitance of the capacitor 209 is in a numerical value range of, for example, 1 nF to 30 nF, the ringing suppression effect is large.
  • FIG. 5 shows a top view and a cross-sectional view illustrating details of a configuration example of a solder joint portion of the capacitor 209.
  • the upper view is a top view and the lower view is a cross-sectional view.
  • Capacitor 209 includes a capacitor body 501a and an external electrode 501b.
  • the capacitor body 501a corresponds to an example of the capacitor according to the present embodiment.
  • the external electrode 501b corresponds to an example of an intermediate member according to this embodiment.
  • the base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a and 504b formed on the upper surface of the ceramic substrate 504c, and a conductor pattern 504d formed on the lower surface of the ceramic substrate 504c.
  • the external electrode 501b is connected to the positive conductor pattern 504a and the negative conductor pattern 504b by a solder joint 211.
  • the solder joint portion 211 corresponds to an example of the joining material according to the present embodiment.
  • Solder resists 503a and 503b are formed on the positive conductor pattern 504a and the negative conductor pattern 504b to prevent the solder from spreading.
  • a capacitor 209 is mounted on the solder resist 503b.
  • the thickness of the solder resists 503a and 503b is, for example, not less than 10 ⁇ m and not more than 30 ⁇ m.
  • the melted solder is spread by the weight of the capacitor 209 to form a solder joint portion 211 connected to the ceramic capacitor external electrode 501b. Therefore, the thickness of the solder disposed between the ceramic capacitor external electrode 501b and the conductive pattern 504a of the base insulating substrate 203 can be ensured only approximately equal to the thickness of the solder resist 503b. For this reason, when the thickness of the solder resist 503b is not sufficient, there is a problem that only the thickness of the solder joint portion 211 that is insufficient to obtain the joint life required as the joint reliability of the power module can be secured. .
  • the resistor 210 may be directly formed between the positive conductor pattern 504 a and the negative conductor pattern 504 b of the base insulating substrate 203. Specifically, the resistor 210 is formed on the surface of the ceramic substrate 504c exposed between the conductor pattern 504a and the conductor pattern 504b at a portion where the end of the conductor pattern 504a and the end of the conductor pattern 504b face each other. To the end portions of the conductor patterns 504a and 504b. The resistor 210 is connected to the end portions of the conductor patterns 504a and 504b.
  • a paste agent that becomes the resistor 210 is disposed on the surface of the substrate material to be the base insulating substrate 203.
  • the paste agent is made of a conductor component such as ruthenium oxide (RuO 2 ) and a binder.
  • the paste agent is disposed in a region where the resistor 210 is to be formed using a printing method or the like.
  • the caking agent is used to adhere the resistor 210 to the ceramic substrate 504c.
  • the base material to which the paste agent is applied is baked to produce the base insulating substrate 203, and at the same time, the resistor 210 is formed by heating the paste agent.
  • the resistor 210 is not directly formed on the base insulating substrate 203 as described above, but as a single component in which the resistor film 506a is formed on the ceramic plate 506b as a support as shown in FIG. May be prepared.
  • the resistor 210 shown in FIG. 7 is disposed on the surface of the base insulating substrate 203.
  • the base insulating substrate 203 includes a ceramic substrate 504c, conductor patterns 504a, 504b, and 504e disposed on the surface of the ceramic substrate 504c, and a conductor pattern 504d disposed on the back surface of the ceramic substrate 504c.
  • the resistor 210 is connected to the surface of the conductor pattern 504e via a solder 508.
  • the solder 508 connects the ceramic plate 506b of the resistor 210 and the conductor pattern 504e.
  • the ceramic plate 506b is made of ceramics such as alumina (Al 2 O 3 ) and aluminum nitride (AlN).
  • the conductor pattern 504e may be connected to either the positive conductor pattern 504a or the negative conductor pattern 504b.
  • a plurality of bonding pads 506 c may be formed on the upper surface of the resistor 210.
  • the conductor pattern 504a for the positive electrode and the conductor pattern 504b for the negative electrode are connected so that the wiring material 507 bonded so as to connect the conductor pattern 504a and the bonding pad 506c, and the conductor pattern 504b and another bonding pad 506c.
  • the wiring member 507 bonded and the resistor 210 may be electrically connected.
  • the base plate 201 shown in FIG. 2 may be an AlSiC plate or a Cu plate. However, if the base plate 201 has sufficient strength to use the power semiconductor device, as shown in FIG. 2), that is, the conductor layer 203i on the back surface side of the base insulating substrate 203 may be exposed as it is.
  • the conductor layer 203i may be made of, for example, copper (Cu).
  • FIG. 8 is a schematic diagram showing a cross section of a modified example of the power semiconductor module described above.
  • the power semiconductor module shown in FIG. 8 basically has the same configuration as that of the power semiconductor module shown in FIG. 2, but does not include the base plate 201 (see FIG. 2), and the base insulating substrate.
  • the capacitor 209 in the power semiconductor module shown in FIG. 8 has a structure in which a metal terminal 306b is connected to a capacitor body 306a.
  • the metal terminal 306b is connected to the end face side of the capacitor body 306a.
  • the metal terminal 306b is formed to extend toward the lower side of the capacitor body 306a.
  • the lower end of the metal terminal 306b is connected to the conductor patterns 203e and 203f via the solder joints 211.
  • a space is formed between the capacitor body 306a and the insulating material 203b.
  • the capacitor body 306a corresponds to an example of the capacitor according to the present embodiment.
  • the metal terminal 306b corresponds to an example of an intermediate member according to the present embodiment.
  • the solder joint portion 211 corresponds to an example of the joining material according to the present embodiment.
  • the capacitor 209 is soldered to the conductor patterns 203e and 203f
  • the conductor patterns 203e and 203f to be soldered are made of Cu
  • the linear expansion coefficient between the conductor patterns 203e and 203f and the capacitor 209 Due to this difference, solidification shrinkage of the solder material during soldering, warping deformation of the base insulating substrate 203, and warping deformation of the base plate 201 (see FIG. 2) occur.
  • the capacitor 209 is broken or the joint life of the solder joint 211 is extremely reduced.
  • the resistor 210 is provided, there is a problem that the resistor 210 is peeled off from the conductor patterns 203d and 203e or the life of the solder joint portion of the resistor 210 is extremely reduced.
  • the inside of the power semiconductor module is sealed with the sealing body 205 made of the above-described epoxy resin, so that the epoxy resin becomes the conductor patterns 203a, 203d to 203f, the capacitor 209, and the resistor.
  • the epoxy resin becomes the conductor patterns 203a, 203d to 203f, the capacitor 209, and the resistor.
  • warping and deformation of the base insulating substrate 203 or the base plate 201 can be suppressed. For this reason, it is possible to reduce the stress generated in the capacitor main body portions 501a and 306a of the capacitor 209, the stress generated in the resistance film of the resistor 210, and the stress generated in the solder joint portion 211.
  • the capacitor 209 and the resistor 210 generate heat when energized. Due to the self-heating of the capacitor 209 and the resistor 210, the electrical characteristics of the capacitor 209 and the resistor 210 change. For this reason, it is necessary to efficiently release the heat caused by the above-described self-heating to the outside.
  • the heat dissipation of the power semiconductor module is improved by using an epoxy resin having a thermal conductivity higher than that of the gel material as the sealing body 205.
  • the thermal conductivity of the epoxy resin can be adjusted by the kind and content of fillers that are mixed. Further, as described above, the type and content of the filler are closely related to the linear expansion characteristics of the cured epoxy resin. For this reason, it is preferable that the thermal conductivity of the sealing body 205 is 0.5 W / m ⁇ K or more and 5 W / m ⁇ K or less.
  • a sealing body 205 made of an epoxy resin.
  • an epoxy resin whose filler material and filler content are adjusted so that the linear expansion coefficient of the epoxy resin when cured is close to the Cu linear expansion coefficient of 16.8 ppm / ° C. It is preferable to use as the body 205.
  • the warping behavior of the conductor layer 203i is caused by the structure on the conductor layer 203i, specifically, the insulating material 203b, the conductor patterns 203a, 203d to 203f, 203h, the semiconductor element 204 such as the switching element 204a and the free wheel diode 204b. Influenced by members. Therefore, it is not necessary to limit the linear expansion coefficient of the epoxy material constituting the sealing body 205 to 16.8 ppm / ° C., and by appropriately selecting the linear expansion coefficient in the range of 10 ppm / ° C. to 20 ppm / ° C. The warping behavior of the layer 203i may be suppressed.
  • an upper sealing body 215 made of a material different from the sealing body 205 is sealed. You may arrange on top. For example, an insulating material may be used as the upper sealing body 215.
  • the height of the capacitor 209 is arbitrarily selected depending on the capacitance required for the capacitor 209, and the height is, for example, in the range of 1 mm to 3.5 mm. Therefore, the height from the conductor pattern 203a to the upper surface of the sealing body 205 is preferably at least 1 mm.
  • the loop height of the wiring member 206 is preferably as low as possible because the wiring inductance increases as the loop height increases. For example, it is preferable that the height from the conductor pattern 203a to the top which is the highest part of the loop of the wiring member 206 is 4 mm or less.
  • the sealing body 205 seals the joint portion between the wiring member 206 and the semiconductor element 204 and the wiring member 206, only the effect that the joint portion of the wiring member 206 can be reinforced can be obtained. In addition, when an expensive epoxy material is used as the sealing body 205, an effect that the amount of the epoxy material used can be reduced is also obtained.
  • the same material as that of the sealing body 205 may be used for the sealing body 215, but a material having physical properties different from that of the sealing body 205 may be used.
  • silicon gel may be used as the material of the sealing body 215, and the sealing body 205 may be an epoxy resin in which at least one of the filler type and content is changed.
  • the sealing body is made of a different material in the middle of the loop of the wiring member 206, that is, when the interface between the sealing body 205 and the sealing body 215 is located in the middle of the loop of the wiring member 206, the sealing body Due to the difference in the linear expansion coefficient between 205 and the sealing body 215, the loop of the wiring member 206 receives stress.
  • the loop of the wiring member 206 in the vicinity of the interface is subjected to stress due to the expansion and contraction of the sealing bodies 205 and 215 that are repeatedly generated due to heat generation during use of the power semiconductor module. Fatigue failure may occur. Therefore, it is preferable that the height of the sealing body 205 is a height at which both the wiring member 206 and the capacitor 209 are covered.
  • the power semiconductor module shown in FIGS. 1 and 2 includes at least one semiconductor element 204, conductor patterns 203a, 203d to 203f, and at least one semiconductor element.
  • a snubber circuit 106 and a sealing body 205 are provided.
  • the semiconductor element 204 for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N.
  • At least one semiconductor element 204 is connected to the conductor pattern 203a.
  • At least one snubber circuit 106 is a circuit in which a capacitor body 306a (see FIG. 8) as a capacitor and a resistor 210 are connected in series.
  • the sealing body 205 seals at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, the capacitor body 306a, and the resistor 210.
  • the capacitor body 306a is connected to a metal terminal 306b (see FIG. 8) as an intermediate member.
  • the metal terminal 306b is connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material. As shown in FIG.
  • the sealing body 205 includes at least one semiconductor element 204, conductor patterns 203d to 203f as conductor layers, a capacitor body 306a, a metal terminal 306b as an intermediate member, and a solder joint as a bonding material. 211 and the resistor 210 may be sealed. That is, the sealing body 205 may seal all the components arranged on the base insulating substrate 203.
  • the power semiconductor module shown in FIGS. 1 and 2 includes at least one positive-side power semiconductor element, that is, a positive-side switching element 103P and a positive-side reflux diode 104P, and at least one negative-electrode.
  • Negative electrode side switching element 103N and negative electrode side reflux diode 104N which are side power semiconductor elements, conductor pattern 203a, conductor patterns 203d to 203f as conductor layers, at least one snubber circuit 106, and sealing body 205 Prepare.
  • the conductor pattern 203a includes at least one positive-side power semiconductor element 103P and a positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and a negative-side reflux circuit.
  • the semiconductor element 204 which is one of the diodes 104N, is connected.
  • the conductor patterns 203d to 203f as the conductor layers are formed of the same layer as the conductor pattern 203a.
  • At least one snubber circuit 106 is a circuit in which a capacitor 209 and a resistor 210 are connected in series.
  • the sealing body 205 seals at least one positive power semiconductor element, at least one negative power semiconductor element, conductor patterns 203d to 203f as a conductor layer, a capacitor 209, and a resistor 210. At least one of the capacitor 209 and the resistor 210 is connected to conductor patterns 203d to 203f as conductor layers.
  • the sealing body 205 includes an epoxy resin.
  • the sealing body 205 since the epoxy resin is used as the sealing body 205, the deformation of the conductor patterns 203a, 203d to 203f, 230c to 230f can be suppressed by the sealing body 205. For this reason, it is possible to suppress the occurrence of stress due to the above deformation at the joint between the conductor patterns 203d to 203f, 230c to 230f and the capacitors 209, 209a, 209b or the resistor 210. As a result, a highly reliable power semiconductor module can be obtained.
  • the configuration of the power semiconductor module can be simplified as compared with the case where a substrate different from the substrate on which the power semiconductor element is mounted is prepared for the snubber circuit.
  • the capacitors 209a and 209b, the resistors 210, 233a, and 233b, etc. are provided on the snubber circuit board 230 in advance. Since the snubber circuit can be prepared by mounting the snubber circuit, the snubber circuit can be applied to power semiconductor modules having different configurations.
  • the sealing body 205 may have a thermal conductivity of 0.5 W / m ⁇ K to 5 W / m ⁇ K.
  • the sealing body 205 may have a linear expansion coefficient of 10 ppm / ° C. or more and 20 ppm / ° C. or less.
  • the heat of the capacitor 209 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it is possible to prevent the temperature of the capacitor 209 from rising excessively. As a result, the temperature characteristics of the capacitor 209 can be prevented from affecting the electrical characteristics of the power semiconductor module, and a power semiconductor module that exhibits stable electrical characteristics can be realized.
  • the resistor 210 when the resistor 210 generates heat during use of the power semiconductor module, the heat of the resistor 210 can be easily released to the outside of the power semiconductor module through the sealing body 205. For this reason, it can prevent that the temperature of the resistor 210 rises excessively. As a result, it is possible to prevent the temperature characteristics of the resistor 210 from affecting the electrical characteristics of the power semiconductor module, and to realize a power semiconductor module that exhibits stable electrical characteristics.
  • the sealing body 205 is arranged so that the capacitor 209 is embedded. As shown in FIG. 9, the power semiconductor module further includes an upper sealing body 215 disposed on the sealing body 205.
  • the sealing body 205 is disposed in a region that contacts the constituent member of the power semiconductor module such as the capacitor 209, and an insulator other than the sealing body 205 is provided in a portion that does not directly contact the constituent member. Since the upper sealing body 215 made of is disposed, the amount of the sealing body 205 containing an epoxy resin can be reduced. Therefore, the manufacturing cost of the power semiconductor module can be reduced by using a lower cost material than the sealing body 205 as the upper sealing body 215.
  • the semiconductor element 204 which is at least one positive power semiconductor element and at least one negative power semiconductor element is formed of a wide band gap semiconductor.
  • the semiconductor element 204 is made of a wide band gap semiconductor, in addition to suppressing ringing, high-speed switching operation and high-temperature operation are possible.
  • the wide band gap semiconductor is one selected from the group consisting of silicon carbide (SiC), gallium nitride (GaN), diamond, and gallium oxide.
  • SiC silicon carbide
  • GaN gallium nitride
  • diamond gallium oxide
  • FIG. 10 is a schematic diagram showing a partial cross section of the power semiconductor module according to the second embodiment of the present invention.
  • the power semiconductor module shown in FIG. 10 basically has the same configuration as that of the power semiconductor module according to the first embodiment, but a ceramic capacitor with a metal terminal is applied as the capacitor 209.
  • Capacitor 209 mainly includes a capacitor body 306a including an external electrode formed on an end face, and a metal terminal 306b connected to the external electrode of capacitor body 306a.
  • the power semiconductor module according to the present disclosure includes at least one positive electrode side switching semiconductor element 103P and positive electrode side freewheeling diode 104P, which are positive electrode power semiconductor elements, and at least one negative electrode power semiconductor element.
  • Negative electrode side switching element 103N and negative electrode side reflux diode 104N conductor pattern 303a, conductor patterns 303b and 303c as conductor layers, and at least one snubber circuit.
  • a semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element is connected to the conductor pattern 303a.
  • the conductor patterns 303b and 303c are configured by the same layer as the conductor pattern 303a.
  • At least one snubber circuit is a circuit in which a capacitor 209 and a resistor 210 (see FIG. 1) are connected in series. At least one of the capacitor 209 and the resistor 210 is connected to the conductor patterns 303b and 303c.
  • Capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to capacitor body 306a. The metal terminal 306b is connected to the conductor patterns 303b and 303c.
  • the stress generated during soldering can be absorbed by the metal terminal 306b. For this reason, it becomes possible not only to prevent the capacitor main body 306a from cracking but also to reduce the stress generated at the solder joints 307 between the conductor patterns 303b and 303c and the metal terminal 306b. As a result, an unprecedented effect that the long-term reliability of the solder joint portion 307 is improved can be obtained.
  • an insulating layer 304 is formed on a base member 305 made of copper (Cu).
  • Conductive patterns 303a, 303b, and 303c are formed on the insulating layer 304.
  • a power semiconductor element 204 is bonded onto the conductor pattern 303 a by a die bond material 302.
  • a conductor pattern 303b and a conductor pattern 303c are formed as conductor patterns that are located on the same plane as the conductor pattern 303a on which the semiconductor element 204 is mounted and are configured by the same layer.
  • the conductor pattern 303b and the conductor pattern 303c are connected by a capacitor 209 that is a ceramic capacitor with a metal terminal.
  • the conductor pattern 303a and the conductor pattern 303b are connected by a wiring member 206, for example.
  • the capacitor 209 includes the capacitor main body 306a and a pair of metal terminals 306b connected to the external electrodes located at the connection portion 306c which is the end face of the capacitor main body 306a.
  • the connection portion 306c is a connection portion between the capacitor body 306a and the metal terminal 306b.
  • a tip portion located on the opposite side to the base portion connected to the capacitor main body 306a is a connection portion connected to the conductor patterns 303b and 303c.
  • tip part of the metal terminal 306b is soldered with the conductor patterns 303b and 303c.
  • solder joint portion 307 is formed between the connection portion of the metal terminal 306b and the conductor patterns 303b and 303c. Further, a solder restricting portion 308 made of a solder resist is formed on the conductor patterns 303b and 303c so that the solder does not spread out and the shape of the solder joint portion 307 does not become unstable. The solder restricting portion 308 is formed on the conductor patterns 303b and 303c in advance before soldering.
  • Capacitor 209 is a ceramic capacitor mainly composed of calcium zirconate, for example, but may be a ceramic capacitor mainly composed of barium titanate.
  • the capacitor 209 may be made of a material that can obtain desired electrical characteristics.
  • the size of the capacitor 209 can be arbitrarily selected as long as it has electrically required characteristics.
  • the size of the capacitor main body 306a is 3.2 mm ⁇ 1.6 mm (3216 size), 3.2 mm ⁇ 2.5 mm (3225 size), 4.5 mm ⁇ 3.2 mm (4532 size). Values such as 5.7 mm ⁇ 5.0 mm (5750 size) can be adopted.
  • the metal terminal 306b is a frame material mainly composed of copper, for example.
  • the metal terminal 306b may be made of a conductive material such as 42 alloy (Fe—Ni alloy) which is a general lead frame material.
  • the material of the metal terminal 306b is a material mainly composed of Cu having a higher thermal conductivity.
  • the external electrode located at the connection portion 306c between the capacitor body 306a and the metal terminal 306b is made of, for example, solder containing tin (Sn) as a main component.
  • solder containing tin (Sn) As a material of the external electrode, any material may be used as long as the melting point is not lower than that of the solder constituting the solder joint 307 at the tip of the metal terminal 306b.
  • the capacitor body 306a which is one ceramic capacitor, is connected to the metal terminal 306b.
  • a plurality of capacitor bodies 306a are stacked in multiple stages to form a set of metal terminals.
  • the capacitor body 306a may be configured by connecting the capacitor main body 306a in parallel by a pair of metal terminals 306b and 306c to satisfy the required electrical characteristics.
  • FIG. 11 is a schematic diagram showing a cross section of a capacitor of a power semiconductor module according to a modification of the second embodiment of the present invention. In FIG.
  • capacitor bodies 306a are stacked and connected by a set of metal terminals 306b and 306c to form one capacitor 209.
  • the number of capacitor main bodies 306a to be stacked may be two or four or more, and is appropriately selected so as to match the required electrical characteristics.
  • a set of metal terminals 306b and 306c corresponds to an example of an intermediate member according to the present embodiment.
  • the capacitor body 501a is mounted close to the conductor patterns 504a and 504b as shown in FIG.
  • a space 220 (see FIG. 5) formed between 209 and the ceramic substrate 504c, which is an insulating layer, is equivalent to the sum of the thicknesses of the conductor patterns 504a and 504b and the solder resist 503b.
  • the thicknesses and widths of the conductor patterns 504a and 504b are designed according to the current to be supplied to the conductor patterns 504a and 504b, but the thickness may be about 0.2 mm. It is common.
  • the thickness of the solder resists 503a and 503b is, for example, not less than 10 ⁇ m and not more than 30 ⁇ m. Therefore, the distance between the lower part of the capacitor 209 and the ceramic substrate 504c is about 0.21 mm to 0.23 mm.
  • the sealing body 205 having a high viscosity is applied, it is difficult to completely encapsulate the sealing body 205 without a gap in the space 220 between the lower portion of the capacitor 209 and the ceramic substrate 504c.
  • the gap in the sealing body 205 in this embodiment is assumed to have a diameter of 50 ⁇ m or more.
  • the space 220 may be filled with a highly permeable underfill agent to ensure insulation.
  • the underfill agent any insulator can be used. For example, an epoxy resin or a silicon resin may be used.
  • the conductor pattern as the conductor layer includes the conductor pattern 504a as the first conductor pattern and the second conductor pattern 504a spaced apart from the conductor pattern 504a. And a conductor pattern 504b as a conductor pattern.
  • the capacitor 209 is arranged so as to connect the conductor pattern 504a and the conductor pattern 504b.
  • the power semiconductor module is disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 504a, and the conductor pattern 504b, and includes an underfill agent as an insulator made of a material different from that of the sealing body 205.
  • the above-described underfill agent may be disposed, for example, in a space located under the capacitor body 306a of the capacitor 209 shown in FIG. 10 or FIG.
  • the underfill agent may be disposed, for example, so as to separate between the conductor pattern 303b and the conductor pattern 303c under the capacitor main body 306a.
  • the resin used as the sealing body 205 has poor fluidity, only the resin component in the sealing body 205 selectively flows into the space below the capacitor 209, and the filler component does not flow into the space. To do.
  • the thermal conductivity of the sealing body 205 is locally reduced and the linear expansion coefficient of the sealing body 205 is increased.
  • a defect that the capacitor 209 breaks after sealing may occur.
  • the viscosity of the epoxy resin used as the sealing body 205 is desirably smaller, but the viscosity varies depending on the type of filler and the content of the filler. Therefore, for example, the viscosity of the resin to be the sealing body 205 is preferably in the range of 10 Pa ⁇ s to 100 Pa ⁇ s.
  • the height H1 of the capacitor 209 with a metal terminal the wiring inductance due to the metal terminal 306b increases as the height H1 increases. Therefore, as shown in FIG. 10, the height H1 is preferably lower than the loop height H2 of the wiring member 206.
  • the capacitor 209 includes a capacitor body 306a and a metal terminal 306b connected to the capacitor body 306a.
  • the metal terminal 306b is connected to conductor patterns 303b and 303c as conductor layers.
  • the configuration of the power semiconductor module can be simplified as compared with the case, and since the junction portion between the conductor patterns 303b and 303c and the capacitor 209 can be easily mounted, the junction portion can be formed with high reliability. For this reason, ringing can be suppressed by the snubber circuit, and occurrence of problems due to defects in the joint portion between the capacitor 209 and the conductor patterns 303b and 303c can be suppressed.
  • the power semiconductor module includes a wiring member 206 connected to any one of at least one positive power semiconductor element and at least one negative power semiconductor element, that is, the semiconductor element 204. As shown in FIG. 10, the height H1 from the conductor patterns 303b and 303c to the top of the capacitor 209 is lower than the height H2 from the conductor patterns 303b and 303c to the top of the wiring member 206.
  • the inductance of the metal terminal 306b increases as the length of the metal terminal 306b connecting the capacitor body 306a and the conductor patterns 303b and 303c increases, the height H1 to the top of the capacitor 209 is set to the top of the wiring member 206.
  • the height H2 lower than the height H2, it is possible to prevent the metal terminal 306b from becoming too long.
  • an increase in inductance due to the metal terminal 306b can be suppressed, and an increase in wiring inductance of the entire power semiconductor module can be suppressed. For this reason, the surge voltage when ringing occurs can be suppressed.
  • FIG. 12 is a schematic diagram showing a cross section of the power semiconductor module according to the third embodiment of the present invention.
  • FIG. 13 is a schematic diagram showing a partial cross section of the power semiconductor module according to Embodiment 3 of the present invention shown in FIG.
  • the power semiconductor module shown in FIG. 12 basically has the same configuration as that of the power semiconductor module shown in FIG. 8, but is a ceramic capacitor with metal terminals that forms a snubber circuit as shown in FIG.
  • the capacitor 209 and the resistor 210 are not on the same layer as the semiconductor element 204, but are mounted on the snubber circuit board 230, and the snubber circuit board 230 is soldered to the conductor pattern 203j on the upper side of the power semiconductor module. The point of joining is different.
  • description will be made with reference to FIGS. 12 and 13.
  • FIG. 13 is an enlarged partial cross-sectional view of the periphery of the capacitor 209 with a metal terminal and the resistor 210 forming the snubber circuit of the power semiconductor module.
  • a capacitor 209 and a resistor 210 are mounted on a snubber circuit substrate 230.
  • the snubber circuit substrate 230 includes a ceramic substrate 230a which is an insulating substrate, conductor patterns 230c, 230d and 230e disposed on the surface of the ceramic substrate 230a, and a conductor pattern 230b disposed on the back side of the ceramic substrate 230a. including.
  • the conductor patterns 230c, 230d, and 230e are disposed on the surface of the ceramic substrate 230a at a distance from each other.
  • the arrangement of the conductor patterns 230c, 230d, and 230e can be arbitrarily determined. For example, they may be arranged so as to extend substantially parallel to each other.
  • the conductor pattern 230b disposed on the back surface of the ceramic substrate 230a is connected to the conductor pattern 203j on the insulating material 203b by solder 231.
  • the snubber circuit board 230 corresponds to an example of the intermediate member according to the present embodiment.
  • Capacitor 209 corresponds to an example of a capacitor according to this embodiment.
  • the solder 231 corresponds to an example of the bonding material according to the present embodiment.
  • a substrate made of another insulating material may be used as the insulating substrate instead of the ceramic substrate 230a.
  • a resin substrate may be used instead of the ceramic substrate 230a.
  • the capacitor 209 includes a capacitor main body 306a and a metal terminal 306b.
  • the capacitor 209 connects the conductor pattern 230c and the conductor pattern 230d.
  • the resistor 210 connects the conductor pattern 230d and the conductor pattern 230e.
  • the capacitor 209 and the resistor 210 are connected in series.
  • the conductor pattern 230e is connected to the semiconductor element 204 and the like by the wiring member 206.
  • the use of the ceramic capacitor with metal terminals as the capacitor 209 as described above suppresses the generation of voids due to the low fluidity of the resin to be the sealing body 205. You can get an unprecedented effect.
  • a capacitor 209 with a metal terminal and a resistor 210 are connected in series to the conductor patterns 230c, 230d, and 230e on the upper side of the snubber circuit board 230.
  • the conductor pattern 230c includes at least one positive-side power semiconductor element 103P and positive-side reflux diode 104P, and at least one negative-side power semiconductor element 103N and negative-side reflux diode.
  • a semiconductor element 204 which is one of 104N is connected.
  • the ceramic substrate 230a is a substrate made of an arbitrary insulating material.
  • the ceramic substrate 230a is a substrate made of alumina (AL 2 O 3 ), aluminum nitride (AlN), silicon nitride (SiN), or the like.
  • the resistor 210 is formed by disposing a paste material such as ruthenium oxide (Ru 2 O) to be the resistor 210 on the surface of the ceramic substrate 230a using a printing method or the like.
  • the Ag paste material may be disposed on the front surface and the back surface of the ceramic substrate 230a by a printing method or the like. By firing the Ag paste material arranged in this way, the upper conductor patterns 230c, 230d, 230e and the lower conductor pattern 230b can be obtained.
  • the snubber circuit board can be obtained by mounting the capacitor 209 on the snubber circuit board 230 thus obtained by soldering in a process different from the manufacturing process of the power semiconductor module. Further, in the step of soldering the semiconductor element 204 of the power semiconductor module to the conductor pattern 203a, the snubber circuit board on which the capacitor 209 is mounted is simultaneously connected to the conductor pattern 203j. Further, the wiring member 206, the case 202, and the like are connected to the base insulating substrate 203 on which the snubber circuit board and the semiconductor element 204 are mounted, and the sealing body 205 is formed so as to cover the semiconductor element 204 and the like. The power semiconductor module shown is obtained.
  • the method for manufacturing a power semiconductor module is a snubber that is a circuit in which a capacitor body 306a as a capacitor and a resistor 210 are connected in series.
  • a method of manufacturing a power semiconductor module including a circuit comprising a step of connecting a capacitor to an intermediate member on which a snubber circuit is formed.
  • the intermediate member includes a ceramic substrate 230a as an example of an insulating substrate having a surface, and conductor patterns 230b, 230c, 230d, and 230e that are conductor patterns for a snubber circuit formed on the surface of the ceramic substrate 230a.
  • the method for manufacturing a power semiconductor module further includes a step of placing a ceramic substrate 230a in which a capacitor body 306a is connected to conductor patterns 230c and 203d on a base insulating substrate 203 having a surface. On the surface of the base insulating substrate 203, at least one positive power semiconductor element and at least one negative power semiconductor element 204, at least one positive power semiconductor element and at least one negative power element Conductor patterns 203a, 203h, and 203j to which any one of the semiconductor elements 204 as the side power semiconductor elements is connected are arranged.
  • the ceramic substrate 230 is connected to the conductor pattern 203 j of the base insulating substrate 203. After that, by performing steps such as installation of the case 202 and the wiring member 206 and formation of the sealing body 205, a power semiconductor module incorporating a snubber circuit as shown in FIG. 12 is obtained.
  • the snubber circuit board 230 can be used as it is for a plurality of types of power semiconductor modules having different configurations. Therefore, when the arrangement of the power semiconductor element 204 and the layout of the wiring member 206 are changed, it is not necessary to redesign the snubber circuit, and the man-hour and cost required for designing the power semiconductor module can be reduced.
  • FIG. 14 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • the power semiconductor module including the snubber circuit board 230 shown in FIG. 14 has basically the same configuration as the power semiconductor module shown in FIGS. 12 and 13, but the configuration of the snubber circuit board 230 is the same. This is different from the power semiconductor module shown in FIGS. That is, in the power semiconductor module shown in FIG. 14, in the snubber circuit substrate 230, a through hole 232 that penetrates the ceramic substrate 230a from the conductor pattern 230e toward the lower conductor pattern 230b is formed.
  • the conductor pattern 230e and the conductor pattern 230b are connected by the through hole 232 or a via filled in the through hole 232 with a conductor.
  • the snubber circuit board 230 and the upper conductor pattern 203j of the power semiconductor module are connected by solder 231.
  • the conductor pattern 203j is connected to the conductor pattern 203a (see FIG. 12) on the upper side of the power semiconductor module through the wiring member 206.
  • the power semiconductor module shown in FIG. 14 can obtain the same effects as those of the power semiconductor module shown in FIG. 12 and FIG. Further, in the power semiconductor module shown in FIG. 14, by providing the through hole 232, it is not necessary to secure an area for joining the wiring member 206 on the conductor pattern 230 e on the upper side of the snubber circuit substrate 230. Therefore, the area of the conductor pattern 230e can be reduced, and the snubber circuit board 230 can be reduced in size. Further, by installing the through hole 232 in the vicinity of the resistor 210, it is possible to efficiently dissipate heat generated when a current flows through the snubber circuit in the direction of the base insulating substrate 203 of the power semiconductor module.
  • FIG. 15 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • FIG. 15 corresponds to FIG.
  • the power semiconductor module disclosed in FIG. 15 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 13, but is not a capacitor 209 with metal terminals disclosed in FIG.
  • the power semiconductor module shown in FIG. 13 is different from the power semiconductor module shown in FIG. 13 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided.
  • the reliability required for the power semiconductor module can be ensured without installing the metal terminal 306b on the capacitor 209 as shown in FIG.
  • the ceramic substrate 230a having a ceramic support as an insulator is described.
  • the snubber circuit is formed on a circuit board having a resin support such as a printed circuit board, By sealing with the sealing body 205 by an epoxy resin etc., the stress which generate
  • FIG. 16 is a schematic diagram showing a partial cross section of a power semiconductor module according to a modification of the third embodiment of the present invention.
  • FIG. 16 corresponds to FIG.
  • the power semiconductor module disclosed in FIG. 16 basically has the same configuration as that of the power semiconductor module disclosed in FIG. 14, but is not a capacitor 209 with metal terminals disclosed in FIG.
  • the power semiconductor module shown in FIG. 14 is different from the power semiconductor module shown in FIG. 14 in that a capacitor 209 which is a ceramic capacitor having no terminals is provided. Even with such a configuration, the same effect as that of the power semiconductor module disclosed in FIG. 14 can be obtained. Further, the same effect as that of the power semiconductor module shown in FIG. 15 can be obtained.
  • the capacitor 209 by mounting the capacitor 209 on the ceramic substrate 230a having a linear expansion coefficient close to that of the ceramic capacitor, the stress generated in the solder joint portion 211 of the capacitor 209 is reduced. For this reason, it becomes possible to improve the joining reliability of the capacitor 209.
  • the solder restricting portion 308 as shown in FIG. 11 is formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor body 306b. May be.
  • the solder restricting portion 308 as an insulator may be made of a material different from that of the sealing body 205.
  • the solder resist 503b shown in FIG. 5 may be formed on the surface of the conductor patterns 230c and 230d in the region located under the capacitor 209. Instead of the solder resist 503b as an insulator, another insulator may be disposed at the position.
  • FIG. 17 is a schematic diagram showing a partial cross section of a capacitor and an upper surface of a connection portion of a power semiconductor module according to Embodiment 4 of the present invention.
  • the power semiconductor module shown in FIG. 17 basically has the same configuration as that of the power semiconductor module according to the second embodiment. However, as shown in FIG. 17, the conductor pattern 404 is connected to the metal terminal 306b of the capacitor 209. The configuration of the connecting portion 401c to be connected is different. This will be described below. Note that the upper diagram in FIG. 17 shows a partial cross section of the capacitor and the connection portion, and the lower diagram shows a top view of the connection portion.
  • a capacitor 209 which is a ceramic capacitor with a metal terminal, mainly includes a capacitor body 306a and a metal terminal 306b.
  • a connection portion 401c with the conductor pattern 404 is formed at the tip of the metal terminal 306b.
  • the metal terminal 306b has a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the direction in which the connecting portion 401c extends intersects the direction in which the main body side portion 401b extends.
  • the angle at which the main body side portion 401b and the connecting portion 401c intersect is preferably 80 ° to 100 °, may be 85 ° to 95 °, and may be 90 °.
  • the connecting portion 401c is provided with a convex portion 401d in order to ensure the solder thickness T1 of the solder joint portion 402.
  • the convex portion 401d is, for example, a portion obtained by plastic deformation of a part of the connecting portion 401c into a convex shape.
  • the convex portion 401d may be formed by arranging an arbitrary material such as a conductor or an insulator in a convex shape on the surface of the connection portion 401c.
  • a solder resist 403 is printed on the surface of the conductor pattern 404 in order to stabilize the shape of the solder joint portion 402.
  • the plurality of solder resists 403 are disposed so as to sandwich the region where the connection portion 401 c is disposed in order to define the outer periphery of the solder joint portion 402.
  • the convex portion 401d of the connecting portion 401c of the metal terminal 306b may be formed by pressing the metal terminal 306b in a lead frame state before connecting the metal terminal 306b to the capacitor body 306a.
  • FIG. 18 to 23 are schematic views showing the top surface of the capacitor connecting portion of the power semiconductor module according to the modification of the fourth embodiment of the present invention, and show a modification of the configuration of the connecting portion 401c.
  • the convex portion 401d may be arranged at a position shifted from the center in the connection portion 401c of the metal terminal 306b.
  • a plurality of convex portions 401d for example, two convex portions 401d may be arranged on the connecting portion 401c.
  • the number of convex portions 401d arranged in the connecting portion 401d may be four or more.
  • the direction which provided the some convex part 401d can suppress generation
  • the height of the convex portion 401d only needs to secure a thickness T1 that can sufficiently secure the bonding reliability of the solder joint portion 402.
  • the height (thickness T1) of the convex portion 401d is set to 50 ⁇ m or more and 300 ⁇ m or less. be able to.
  • the convex portion 401d shown in FIG. 17 was formed by plastically deforming the connecting portion 401c into a protruding shape, but as shown in FIG. 21, a through hole is formed at the tip portion of the convex portion 401d. Also good.
  • the convex portion 401d of the connecting portion 401c shown in FIG. 21 forms a through hole by punching a part of the portion that should become the convex portion 401d when the connecting portion 401c is pressed.
  • the punching direction at the time of the press working may be a direction from the mounting surface side where the capacitor main body 306a is connected to the metal terminal 306b toward the surface side in contact with the conductor pattern 404.
  • the return at the time of punching occurs on the side of the surface in contact with the conductor pattern 404, so that the return becomes the convex portion 401d.
  • the return height at the time of punching may be 30 ⁇ m or more and 300 ⁇ m or less.
  • the number of through holes should just be one or more, and it is desirable to provide a plurality of convex portions 401d in which the through holes are formed.
  • the bonding area between the metal terminal 306b and the solder increases as compared with the conventional case. As a result, not only the bonding strength between the metal terminal 306b and the conductor pattern 404 is improved, but also the bonding reliability can be improved.
  • the angle ⁇ 2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an acute angle.
  • an angle ⁇ 1 formed between the connecting portion 401c and the surface of the conductor pattern 404 on the connecting portion side between the connecting portion 401c and the main body side portion 401b also exceeds 0 °.
  • connection portion 401c is inclined with respect to the surface of the conductor pattern 404, the thickness of the solder constituting the solder joint portion 402 can be increased. In addition, it is possible to obtain an effect that it is easy to determine how much the solder 402 has been wetted by the connection portion 401c by visual inspection.
  • the angle ⁇ 2 formed by the connection portion 401c located on the tip side of the metal terminal 306b and the main body side portion 401b may be an obtuse angle.
  • an angle ⁇ 3 formed between the connection portion 401c and the surface of the conductor pattern 404 on the front end side of the connection portion 401c also exceeds 0 °.
  • the thickness of the solder constituting the solder joint portion 402 can be increased as in the configuration shown in FIG.
  • solder material When a rectangular or spherical solder material is placed in the vicinity of the capacitor 209 and soldered, the molten solder material must be wet and spread so that the solder material is wet and spread under the connection portion 401c of the metal terminal 306b. . Also in this case, it is difficult to secure the solder thickness under the connection portion 401c for obtaining sufficient bonding reliability. Therefore, as shown in FIGS. 17 to 21, by providing the convex portion 401d on the lower surface (back surface) of the connecting portion 401c of the metal terminal 306b, it is possible to sufficiently secure the thickness of the solder under the metal terminal 306b.
  • the metal terminal 306 b includes a connection portion 401 c connected to the conductor pattern 404.
  • a protruding portion 401d having a shape protruding toward the conductor pattern 404 is formed on a part of the connecting portion 401c.
  • the power semiconductor module includes a solder joint 402 including solder as a conductive joint member disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
  • the convex portion 401d is formed in a part of the connecting portion 401c, the thickness of the solder as the joining member can be ensured by the protruding height of the convex portion 401d. As a result, the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a through-hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c.
  • the solder as a joining member can be arrange
  • the metal terminal 306b includes a connection portion 401c and a main body side portion 401b.
  • the connection part 401 c is connected to the conductor pattern 404.
  • the main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
  • the metal terminal 306b includes a connection portion 401c and a main body side portion 401b.
  • the connection part 401 c is connected to the conductor pattern 404.
  • the main body side portion 401b is connected to the capacitor main body 306a along with the connection portion 401c.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
  • the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when solder is disposed as a joining member between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a capacitor 209 as an electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer. As shown in FIGS. 17 to 21, a convex portion 401d is formed on a part of the connecting portion 401c.
  • the convex portion 401d is formed on a part of the connecting portion 401c, when the conductor pattern 404 and the connecting portion 401c are connected via solder as a joining member, the convex portion 401d
  • the thickness of the solder can be ensured by the protruding height.
  • the reliability of the joint structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • a through hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the convex portion 401d can be easily formed by plastically deforming a part of the connection portion 401c.
  • solder can be disposed inside the through hole 401e, the contact area between the solder and the connection portion 401c can be increased, and the reliability of the joint structure can be further increased.
  • the electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 22, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an acute angle.
  • the electronic component according to the present disclosure includes a capacitor main body 306a as a ceramic electronic component main body and a metal terminal 306b.
  • Capacitor body 306a has two end faces facing each other and includes external electrodes formed on the two end faces.
  • the metal terminal 306b is connected to an external electrode.
  • the metal terminal 306b includes a connection portion 401c to be connected to a conductor pattern 404 as an external conductor layer, and a main body side portion 401b that is connected to the connection portion 401c and connected to the capacitor main body 306a.
  • the extending direction of the connecting portion 401c intersects the extending direction of the main body side portion 401b. As shown in FIG. 23, the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c is an obtuse angle.
  • the connecting portion 401c is placed on the surface of the conductor pattern 404. It will be in the state inclined with respect to it. For this reason, when the solder as the joining member is disposed between the conductor pattern 404 and the connection portion 401c, a sufficient thickness of the solder can be secured. For this reason, the reliability of the junction structure in which the connection portion 401c and the conductor pattern 404 are connected by solder can be improved.
  • the power semiconductor module includes at least one positive-side power semiconductor element 103P and positive-side return diode 104P, and at least one negative-side power.
  • One of at least one positive power semiconductor element and at least one negative power semiconductor element is electrically connected to the conductor pattern.
  • Capacitor 209 is electrically connected to the conductor pattern.
  • the thickness of the joining member such as solder is sufficiently increased. It can be secured. As a result, it is possible to obtain a power semiconductor module capable of extending the service life with improved reliability of the joint structure.
  • the power semiconductor module includes a sealing body 205 (see FIG. 2).
  • the sealing body 205 seals the semiconductor element 204 corresponding to at least one positive power semiconductor element and at least one negative power semiconductor element, and the capacitor 209 as an electronic component.
  • the sealing body contains an epoxy resin.
  • the power semiconductor module includes a conductor pattern 404 as a conductor layer.
  • the conductor pattern 404 is composed of the same layer as the conductor pattern on which the semiconductor element 204 is mounted.
  • a capacitor 209 as an electronic component is connected to the conductor pattern 404.
  • the capacitor 209 as an electronic component is connected to the conductor pattern 404 formed of the same layer as the conductor pattern, a substrate different from the substrate on which the conductor pattern or the like is formed is replaced with a capacitor as an electronic component.
  • the configuration of the power semiconductor module can be simplified as compared with the case of using for mounting 209, and the bonding portion between the conductor pattern 404 and the capacitor 209 as an electronic component can be easily mounted, so that the bonding portion is highly reliable. Can be formed.
  • an underfill agent may be disposed in a space located under the capacitor body 306a.
  • the underfill agent may be made of a material different from that of the sealing body 205.
  • the power semiconductor module includes at least one semiconductor element 204, conductor patterns 203a, 203e, 203f, 203j, and at least one.
  • the semiconductor element 204 for example, at least one positive electrode side switching element 103P and a positive electrode side freewheeling diode 104P that are positive electrode power semiconductor elements, and at least one negative electrode side switching element 103N that is a negative electrode power semiconductor element and And a negative electrode side reflux diode 104N.
  • At least one semiconductor element 204 is connected to the conductor pattern 203a.
  • At least one snubber circuit 106 is electrically connected to the conductor pattern 203j (see FIG. 12) or the conductor pattern 203d (see FIG. 8).
  • the at least one snubber circuit 106 is a circuit in which the capacitor 209 in FIG. 12 as a capacitor or the capacitor main body 306a in FIG.
  • the sealing body 205 seals at least one semiconductor element 204, the conductor patterns 203a, 203e, 203f, and 203j, the capacitor 209 in FIG. 12 as a capacitor, or the capacitor body 306b and the resistor 210 in FIG.
  • the snubber circuit board 230 (see FIG. 12) or the metal terminal 306b (see FIG. 8) as an intermediate member is connected to the capacitor 209 in FIG. 12 or the capacitor body 306b in FIG.
  • a solder 231 (see FIG. 12) or a solder joint portion 211 (see FIG. 8) as a joining material connects the member to the conductor patterns 203j, 203e, and 203f.
  • At least one snubber circuit 106 may include at least one capacitor 209b as an additional capacitor and resistors 233a and 233b as parallel resistors, as shown in FIGS. .
  • At least one additional capacitor 209 b may be connected in series with the capacitor 209 a and the resistor 210.
  • Resistors 233a and 233b as parallel resistors may be connected in parallel with each of capacitor 209a and at least one additional capacitor 209b.
  • the intermediate member may include a ceramic substrate 230a as an insulating substrate and conductor patterns 230c to 230e as snubber circuit conductor patterns.
  • Ceramic substrate 230a has a surface.
  • the conductor patterns 230c to 230e may be formed on the surface of the ceramic substrate 230a.
  • the capacitor 209 may be connected to the snubber conductor patterns 230c and 230d.
  • the snubber circuit conductor pattern may include a conductor pattern 230c as a first conductor pattern and a conductor pattern 230d as a second conductor pattern.
  • the conductor pattern 230d is disposed at a distance from the conductor pattern 230c.
  • the capacitor 209 may be disposed so as to connect the conductor pattern 230c and the conductor pattern 230d.
  • the power semiconductor module may include an underfill agent as an insulator.
  • the insulator may be disposed in a space 220 surrounded by the capacitor 209, the conductor pattern 230c, and the conductor pattern 230d, and may be made of a material different from that of the sealing body 205.
  • the capacitor 209 may include a capacitor body 501a and an external electrode 501b formed on the surface of the capacitor body 501a, as shown in FIG.
  • the external electrode 501b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
  • the capacitor 209 may include a capacitor main body 306a and a metal terminal 306b connected to the capacitor main body 306a.
  • the metal terminal 306b may be connected to conductor patterns 230c and 230d as snubber circuit conductor patterns.
  • the intermediate member may include a metal terminal 306b connected to a capacitor body 306a as a capacitor as shown in FIG.
  • the metal terminal 306b may be connected to the conductor patterns 203e and 203f by a solder joint portion 211 as a joining material.
  • the conductor pattern may include a conductor pattern 303b as a first conductor pattern and a conductor pattern 303c as a second conductor pattern, as shown in FIG.
  • the conductor pattern 303c may be arranged at a distance from the conductor pattern 303b.
  • the capacitor 209 may be disposed so as to connect the conductor pattern 303b and the conductor pattern 303c.
  • the power semiconductor module may include an underfill agent as an insulator. The underfill agent may be disposed in a space surrounded by the capacitor 209, the conductor pattern 303b, and the conductor pattern 303c, and may be made of a material different from that of the sealing body 205.
  • the metal terminal 401b may include a connection portion 401c connected to the conductor pattern 404 as shown in FIGS.
  • a protruding portion 401d having a shape protruding toward the conductor pattern 404 may be formed on a part of the connecting portion 401c.
  • the solder joint portion 402 as a joining material may be a conductive material disposed between a portion other than a part of the connection portion 401 c and the conductor pattern 404.
  • a through hole 401e may be formed in the convex portion 401d as shown in FIG.
  • the metal terminal includes a connection portion 401c connected to the conductor pattern 404 and a main body connected to the connection portion 401c and connected to a capacitor main body 306a as a capacitor.
  • the side portion 401b may be included.
  • the extending direction of the connecting portion 401c may intersect the extending direction of the main body side portion 401b.
  • the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an acute angle.
  • the angle ⁇ 2 formed by the extending direction of the main body side portion 401b and the extending direction of the connecting portion 401c may be an obtuse angle. Further, the angle ⁇ 2 may be a right angle.
  • the power semiconductor module may further include a wiring member 206.
  • the wiring member 206 may be connected to at least one semiconductor element 204 that is one of at least one positive power semiconductor element and at least one negative power semiconductor element. As shown in FIG. 10, the height H1 from the conductor pattern 303c to the top of the capacitor 209 may be lower than the height H2 from the conductor pattern 303b to the top of the wiring member 206.
  • the present disclosure is advantageously applied to a ceramic electronic component capable of stabilizing the bonding quality at the time of mounting and a power semiconductor module in which the ceramic electronic component is mounted and an IGBT, a MOSFET, or the like is used as a switching element.

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  • Manufacturing & Machinery (AREA)
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Abstract

L'invention concerne un dispositif semi-conducteur de puissance qui est capable de supprimer la suroscillation qui se produit pendant une opération de commutation d'un élément de commutation, et qui a une fiabilité élevée. Un module semi-conducteur de puissance selon la présente invention comprend : un élément semi-conducteur (204); des motifs conducteurs (203a, 203d-203f); un circuit d'amortissement; un corps d'étanchéité (205); une borne métallique (306b) qui fonctionne comme un élément intermédiaire; et une partie de liaison par brasure (211) qui fonctionne comme un matériau de liaison. L'élément semi-conducteur (204) est connecté aux motifs conducteurs (203a, 203d-203f). Le circuit d'amortissement (106) est un circuit dans lequel une partie de corps principal de condensateur (306a) et une résistance (210) sont connectées en série l'une à l'autre. Le corps d'étanchéité (205) scelle l'élément semi-conducteur (204), les motifs conducteurs (203a, 203d-203f, 203h), la partie de corps principal de condensateur (306a) et la résistance (210). La borne métallique (306b), qui est connectée à la partie de corps principal de condensateur (306a), est connectée aux motifs conducteurs (203e, 203f) au moyen de la partie de liaison par brasure (211).
PCT/JP2018/016263 2017-04-21 2018-04-20 Module semi-conducteur de puissance, composant électronique et procédé de production de module semi-conducteur de puissance WO2018194153A1 (fr)

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JP2019513697A JP6755386B2 (ja) 2017-04-21 2018-04-20 電力用半導体モジュールおよび電力用半導体モジュールの製造方法
CN201880020955.XA CN110494977B (zh) 2017-04-21 2018-04-20 电力用半导体模块、电子部件以及电力用半导体模块的制造方法

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JP2019062042A (ja) * 2017-09-26 2019-04-18 太陽誘電株式会社 金属端子付き電子部品および電子部品実装回路基板
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JP2021093441A (ja) * 2019-12-10 2021-06-17 富士電機株式会社 半導体モジュール
CN113632216A (zh) * 2019-03-27 2021-11-09 NexFi技术株式会社 功率基板及具备该功率基板的高电压模块
WO2021229837A1 (fr) * 2020-05-12 2021-11-18 住友電気工業株式会社 Dispositif à semi-conducteurs
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WO2024141733A1 (fr) * 2022-12-28 2024-07-04 Safran Electrical & Power Module de puissance, aeronef comportant un tel module de puissance et procede de fabrication du module de puissance
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CN113632216A (zh) * 2019-03-27 2021-11-09 NexFi技术株式会社 功率基板及具备该功率基板的高电压模块
US11988688B2 (en) 2019-05-29 2024-05-21 Mitsubishi Electric Corporation Voltage dividing device
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US12176146B2 (en) 2020-01-31 2024-12-24 Syddansk Universitet Power module with an integrated aluminium snubber capacitor
US11610873B2 (en) 2020-02-10 2023-03-21 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
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JP2021197389A (ja) * 2020-06-10 2021-12-27 住友電気工業株式会社 半導体装置
WO2024057860A1 (fr) * 2022-09-13 2024-03-21 ローム株式会社 Dispositif à semi-conducteur
WO2024141733A1 (fr) * 2022-12-28 2024-07-04 Safran Electrical & Power Module de puissance, aeronef comportant un tel module de puissance et procede de fabrication du module de puissance
FR3144696A1 (fr) * 2022-12-28 2024-07-05 Safran Electrical & Power Module de puissance, aeronef comportant un tel module de puissance et procede de fabrication du module de puissance

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