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WO2018189900A1 - Dispositif d'émission de lumière - Google Patents

Dispositif d'émission de lumière Download PDF

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Publication number
WO2018189900A1
WO2018189900A1 PCT/JP2017/015364 JP2017015364W WO2018189900A1 WO 2018189900 A1 WO2018189900 A1 WO 2018189900A1 JP 2017015364 W JP2017015364 W JP 2017015364W WO 2018189900 A1 WO2018189900 A1 WO 2018189900A1
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WO
WIPO (PCT)
Prior art keywords
unit
optical path
correction value
light
wiring
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Application number
PCT/JP2017/015364
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English (en)
Japanese (ja)
Inventor
真裕 加藤
康太 今西
Original Assignee
堺ディスプレイプロダクト株式会社
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Application filed by 堺ディスプレイプロダクト株式会社 filed Critical 堺ディスプレイプロダクト株式会社
Priority to PCT/JP2017/015364 priority Critical patent/WO2018189900A1/fr
Publication of WO2018189900A1 publication Critical patent/WO2018189900A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Definitions

  • the present invention relates to a light irradiation apparatus.
  • Patent Document 1 discloses a laser annealing apparatus that captures a wiring of a substrate being transported with a CCD camera and adjusts an irradiation position of a laser beam based on the obtained image.
  • the TFT formation region cannot be accurately irradiated with a laser beam.
  • the laser beam can be accurately irradiated to the TFT formation region along the first wiring, but the second wiring having a different direction from the first wiring is used.
  • the laser beam cannot be accurately irradiated to the TFT forming region along the line.
  • An object of the present invention is to improve the accuracy of determining a position where light should be irradiated in a light irradiation apparatus, and to prevent light irradiation to a position where light should not be irradiated.
  • a light irradiation apparatus includes: a light source; a transport unit that transports a substrate having a surface to be irradiated with light from the light source at a constant speed along a predetermined direction; and the light from the light source is An optical path correction unit that corrects an optical path of the light based on a first correction value so that the predetermined area of the surface is irradiated; the light from the light source is not irradiated outside the predetermined area of the surface; An optical path blocking unit that blocks an optical path based on a second correction value; a first image including a first wiring of a plurality of wirings provided on the surface along a transport direction of the substrate or a vertical direction thereof; A first imaging unit for imaging; a second imaging unit for imaging a second image including a second wiring of the plurality of wirings; and a first arithmetic unit for calculating the first correction value based on the first image And based on the second image, A second calculation unit that calculates two
  • the first imaging unit, the second imaging unit, and the optical path blocking unit are provided in the light irradiation device. Therefore, since it is possible to perform alignment at two locations in one head, it is possible to improve the accuracy of determining the position where light should be irradiated and to block the light path of unnecessary light by the light path blocking unit. It is possible to prevent light from being irradiated to a position that should not be irradiated.
  • FIG. 1 is a schematic side view of a laser annealing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic plan view showing a positional relationship between a substrate and a head. The top view which shows the detail of a head.
  • FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3.
  • FIG. 5 is a schematic cross-sectional view taken along the line V-V in FIG. 3.
  • the control block diagram of the laser annealing apparatus of FIG. 2 is a control flowchart of the laser annealing apparatus of FIG. 2 is a control flowchart of the laser annealing apparatus of FIG.
  • a laser annealing apparatus (light irradiation apparatus) 1 of this embodiment is a TFT formation region (predetermined region) of an amorphous silicon film formed on a mother substrate (substrate) 10 which is a transparent glass substrate. ) Is irradiated with a laser beam (light).
  • the laser annealing apparatus 1 includes a transport unit 20 that transports the mother substrate 10 along a predetermined horizontal direction, a laser light source (light source) 30, and an optical mechanism for condensing a laser beam emitted from the laser light source 30. 40, a first imaging unit 50a and a second imaging unit 50b, and a controller 60.
  • the mother substrate 10 is also simply referred to as a substrate 10.
  • FIG. 2 shows a plan view of the mother substrate 10 having a surface provided with a plurality of wirings 11 extending substantially along one direction (vertical direction in the figure), and the head 43.
  • a TFT formation region 12 is defined on the surface of the mother substrate 10 along each wiring 11 indicated by a broken line in the drawing.
  • the pattern of the wiring 11 is schematically shown, and only a part of the TFT formation region 12 is shown.
  • FIG. 2 shows a single mother substrate 10 on which eight cell substrates 13 that are surrounded by a solid line in the drawing are scheduled.
  • the plurality of wirings 11 are preliminarily intended to be parallel to each other, but are not necessarily aligned in a single direction.
  • the direction of wiring it includes “a direction along a single direction” including a direction slightly deviated from a direction that exactly matches a predetermined single direction (A direction in the figure).
  • the laser annealing apparatus 1 includes an optical path correction unit that adjusts the optical path of a laser beam so that the laser beam from the laser light source 30 is irradiated onto the TFT formation region 12 on the surface of the substrate 10, and a portion other than the TFT formation region 12. And an optical path blocking unit that blocks the optical path of the laser beam so as not to be irradiated.
  • a mask 44 is mounted on each head 43.
  • six heads 43 are arranged for one mother substrate 10.
  • the six heads 43 are moved along the direction orthogonal to the transport direction of the substrate 10 (the direction of the double arrow B) by the drive unit 46 (see FIG. 1).
  • the head 43 may be moved by the drive unit 46 along an arbitrary direction that intersects the transport direction of the substrate 10 as well as the direction orthogonal to the transport direction of the substrate 10.
  • the number of heads 43 and the arrangement manner are not particularly limited.
  • Such a head 43 and the drive part 46 are one of the members which comprise an optical path correction unit.
  • the transport unit 20 includes a stage 21 for transporting the substrate 10 at a constant speed in a constant direction (arrow A direction).
  • the substrate 10 faces the surface (opposite surface) opposite to the surface on which the wiring is provided toward the stage 21, and the upper side of the stage 21 so that the direction of the wiring and the direction in which the substrate 10 should be transported substantially coincide.
  • the stage 21 is provided with a mechanism for floating the substrate 10 and transporting the substrate 10 while maintaining the floating state. With this mechanism, the substrate 10 is transported without contacting the stage 21 on the upper side of the stage 21.
  • This mechanism may be realized, for example, by forming a large number of jets for ejecting gas on the upper surface of the stage 21 and floating the substrate 10 with the gas ejected from the jets.
  • two such stages 21 are provided in series along the transport direction of the substrate 10.
  • a first imaging unit 50a and a second imaging unit 50b are arranged.
  • the first imaging unit 50 a and the second imaging unit 50 b are CCD cameras having the same function, and are provided along a direction that intersects the conveyance direction of the substrate 10. Therefore, in FIG. 1, the 1st imaging part 50a and the 2nd imaging part 50b have overlapped.
  • the illumination light source 70a and the illumination light source 70b are arranged so as to irradiate illumination light toward the front side (surface on which the wiring is provided) of the substrate 10, and the first imaging unit 50a and the second imaging unit are arranged.
  • the parts 50b are arranged toward the front surface (rear surface) of the substrate 10 where no wiring is provided so as to receive light from the illumination light source 70a and the illumination light source 70b from the back side of the substrate 10, respectively.
  • the first imaging unit 50a images the wiring (first wiring) on the surface of the substrate 10 that passes between the first imaging unit 50a and the illumination light source 70a from the back surface of the substrate 10
  • the second imaging unit 50b images the wiring (second wiring) on the surface of the substrate 10 passing between the second imaging unit 50b and the illumination light source 70b from the back surface of the substrate 10, and the first image and the first image respectively. 2 images are acquired.
  • the transfer unit 20 there are provided a laser light source 30 facing the surface on which the wiring of the substrate 10 is provided, and an optical mechanism 40 disposed between the substrate 10 and the laser light source 30.
  • the laser light source 30 is, for example, an excimer laser using a short wavelength ultraviolet ray having a wavelength of 400 nm or less.
  • the optical mechanism 40 is provided on the optical path of the laser beam emitted downward from the laser light source 30 in the vertical direction.
  • an optical lens group 41, a light blocking member 42, a shutter (light path blocking unit) 80, and a head 43 including a mask 44 and a lens array 45 are transferred from the laser light source 30 to the substrate 10. They are arranged in this order.
  • the optical lens group 41 is composed of a combination of a plurality of lenses.
  • the optical lens group 41 includes at least a lens for making the intensity distribution of the laser beam emitted from the laser light source 30 uniform and a lens for making the received laser beam parallel light.
  • a light shielding member 42 is disposed below the optical lens group 41.
  • the light shielding member 42 is formed with a through hole 42a through which a necessary laser beam passes.
  • the upper surface of the light shielding member 42 is covered with an opaque light shielding film except for a portion where the through hole 42a is formed. Accordingly, the laser beam other than passing through the through hole 42 a is blocked by the light blocking member 42.
  • the light blocking member 42 is a member that deforms the beam shape (beam profile) of the laser beam from the optical lens group 41 in order to focus on a mask 44 described later, and the through hole 42a is matched to the beam shape to be focused. The shape and position are set. In the present embodiment, for example, the beam shape (beam profile) of the laser beam is deformed into a rectangle according to the mask 44.
  • a shutter 80 is disposed below the light blocking member 42.
  • the shutter 80 is used to block the optical path of the laser beam that has not passed through the light shielding member 42 and is not correctly irradiated on the TFT formation region 12. Therefore, the upper surface of the shutter 80 is covered with an opaque light shielding film, and the laser beam cannot pass through the shutter 80.
  • the shutter 80 can be driven in a direction intersecting the transport direction (arrow A direction) of the substrate 10 by a driving mechanism (second driving unit) (not shown).
  • the shutter 80 is normally disposed outside the optical path of the laser beam. However, when it is determined that the optical path of the laser beam needs to be blocked by control by the controller 60 described later, the shutter 80 is moved into the optical path and Block the light path. Details of the position and movement of the shutter 80 will be described later.
  • Such a shutter 80 and the second drive unit are one of the members constituting the optical path blocking unit.
  • a head 43 including a lens array 45 is disposed below the shutter 80, and an optical system for causing light collected by the lens array 45 to travel straight toward the surface of the substrate 10 (downward). (Not shown) is disposed below the head 43.
  • This optical system is composed of a plurality of optical elements arranged corresponding to the individual lenses of the lens array 45, and is a part of the optical mechanism 40.
  • the head 43 includes a frame-shaped base 48 provided at the peripheral edge thereof, and a rectangular mask 44 provided inside the base 48.
  • an opening M for passing a necessary laser beam is formed in the center of the mask 44.
  • the upper surface of the mask 44 is covered with an opaque light shielding film except for a portion where the opening M is formed and an alignment region 47 described later. Accordingly, the laser beam focused on the mask 44 by the light shielding member 42 is blocked by the mask 44 except for the laser beam passing through the opening M.
  • an alignment region 47 for aligning the TFT formation region 12 of the substrate 10 and the lens array 45 is provided upstream of the opening M in the conveyance direction (arrow A direction) of the substrate 10 (not shown).
  • a first mark 47a used for alignment based on the first wiring and a second mark 47b used for alignment based on the second wiring different from the first wiring are provided in the alignment region 47.
  • the first mark 47a and the second mark 47b are used to adjust the position where the light collected by the lens array 45 is irradiated.
  • the first mark 47a and the second mark 47b sandwich an opening M formed in the mask 44 in a direction intersecting the conveyance direction of the substrate 10 (a direction indicated by a double-headed arrow B) (see a broken-line circle in the drawing).
  • the first imaging unit 50a described above acquires a first image obtained by imaging the first wiring and the first mark 47a from the back surface of the substrate 10, and the second imaging unit described above. 50b acquires the 2nd image which imaged the 2nd wiring and the 2nd mark 47b from the back of substrate 10.
  • Both the first mark 47 a and the second mark 47 b are marks for aligning the TFT formation region 12 of the substrate 10 and the lens array 45.
  • the shape of the first mark 47a and the second mark 47b may be any shape such as a cross shape.
  • the distance between the wiring 11 extending in the vertical or horizontal direction of the substrate and the cross mark can be read.
  • the wiring 11 and the cross-shaped mark are separated from each other by a distance C1 in a direction intersecting the conveyance direction (arrow A direction) (double arrow B direction).
  • the wiring 11 and the cross-shaped mark exactly coincide with each other in the transport direction (arrow A direction) and the direction crossing the transport direction (double arrow B direction) It is set so that the laser beam is irradiated onto the TFT forming region 12 when it is within the range.
  • two marks such as the first mark 47a and the second mark 47b are provided as alignment marks.
  • the number of alignment marks is three or more. Also good.
  • FIG. 4 is a view of the substrate to be transported as viewed from the front.
  • a lens array 45 is disposed below the opening M of the mask 44.
  • the lens array 45 includes a plurality of hemispherical lenses formed in a matrix, and is attached to the lower surface of the mask 44 via a sheet.
  • the lens array 45 condenses the laser beam that has passed through the opening M of the mask 44, and the collected laser beam is applied to the TFT formation region 12 on the substrate 10.
  • FIG. 5 is a view of the substrate to be transported as viewed from the rear.
  • a first imaging unit 50a is disposed below the first mark 47a
  • a second imaging unit 50b is disposed below the second mark 47b.
  • An illumination light source 70a is disposed above the first mark 47a and the first imaging unit 50a
  • an illumination light source 70b is disposed above the second mark 47b and the second imaging unit 50b.
  • the first imaging unit 50a images the first mark 47a illuminated by the illumination light source 70a from the back surface
  • the above-described shutter 80 is disposed above the opening 44 a of the mask 44.
  • the shutter 80 is disposed above the second imaging unit 50b, not above the first imaging unit 50a.
  • the shutter 80 is driven in a direction intersecting the conveyance direction of the substrate 10 (direction of a double-headed arrow B), and is irradiated on the TFT formation region 12 imaged by the second imaging unit 50b out of the laser beam that has passed through the light shielding member 42. Block the optical path of the laser beam.
  • the shutter 80 may also be provided above the first imaging unit 50a as virtually indicated by a broken line.
  • the controller 60 is electrically connected to the transport unit 20, the laser light source 30, the first imaging unit 50 a and the second imaging unit 50 b, the driving unit 46, and the shutter 80. Control these.
  • the controller 60 is constructed by hardware including a storage unit such as a processing unit, RAM, and ROM, and software mounted thereon.
  • the controller 60 includes a first calculation unit 61, a second calculation unit 62, a determination unit 63, a laser light source control unit 64, a first optical path control unit 65, and a second optical path control unit. 66 and a conveyance control unit 67.
  • the first calculation unit 61 detects a shift in the direction intersecting the transport direction of the substrate 10 between the wiring 11 and the first mark 47a in the image (first image) captured by the first imaging unit 50a, and detects the detected shift width. Is calculated as the first correction value C1.
  • the first correction value C1 may be a distance between the wiring 11 and the first mark 47a, for example, as shown in FIG.
  • the second calculation unit 62 detects and detects a shift in the direction intersecting the conveyance direction of the substrate 10 between the wiring 11 and the second mark 47b in the image (second image) captured by the second imaging unit 50b.
  • the calculated deviation width is calculated as the second correction value C2.
  • the first calculating unit 61 obtains the first correction value C1
  • the second operation unit 62 obtains the second correction value C2
  • ) between the first correction value C1 and the second correction value C2 is a predetermined threshold Cth It is judged whether it is less than.
  • the predetermined threshold Cth is a value that determines whether or not the optical path is blocked by the shutter 80 in the control described later, and can be determined as appropriate from the accuracy required for the laser annealing process.
  • the laser light source control unit 64 controls the laser light source 2 so as to change the pulse frequency of the laser light source 2 at a constant cycle.
  • the first light path control part 65 is controlled based on the determination result by the determination unit 63, based on the first correction value C1 calculated by the first calculating section 61 (first correction value C1 is less than the predetermined value C 0
  • the driving unit 46 is driven to align the TFT formation region 12 of the substrate 10 with the lens array 45.
  • the first optical path control unit 65 drives the head 43 so that the first correction value C1 shown in FIG. 3 becomes zero.
  • the second optical path control unit 66 is controlled based on the determination result by the determination unit 63, and determines the amount of movement for driving the second drive unit (not shown) based on the second correction value C2. Then, the shutter 80 is moved based on the movement amount, the optical path of the laser beam is blocked, and the laser beam is not irradiated on the area other than the TFT formation region 12 of the substrate 10.
  • the difference between the first correction value C1 is the first correction value C1 in conditions is less than the predetermined value C 0 and the second correction value C2 when is not less than the predetermined threshold Cth (
  • the shutter 80 is moved.
  • the conveyance control unit 67 controls the driving of the conveyance unit 20 so that the substrate 10 is conveyed at a predetermined speed and stopped at a predetermined timing as necessary.
  • step S7-1 when the controller 60 of the present embodiment starts control (step S7-1), the first calculation unit 61 calculates the first correction value C1 (step S7-2). Further, the controller 60 calculates the second correction value C2 in the second calculation unit 62 (step S7-3). Next, the controller 60 drives the drive unit 46 based on the first correction value C1 to align the TFT formation region 12 of the substrate 10 and the lens array 45 (step S7-4). Thereafter, the controller 60 determines whether or not the magnitude of the difference value (
  • the TFT forming region 12 of the substrate 10 is irradiated with a laser beam (step S7-6). Otherwise, the shutter 80 is driven based on the second correction value C2, and the optical path of the laser beam is partially blocked as described above (step S7-7). Thereafter, a laser beam is irradiated onto the TFT formation region 12 of the substrate 10 (step S7-8).
  • the shutter 80 is driven so as to shield the region irradiated with the laser beam (already irradiated region) (step S7-9), and the region not irradiated with the laser beam (non-irradiated region) is irradiated with the laser beam (step S7-9). Step S7-10).
  • step S7-11 determines whether the first correction value C1 and the second correction value C2 can be calculated (step S7-11), and the first correction value C1 and the second correction value C2 can be calculated.
  • the controller 60 returns to step S7-2 and repeats a series of controls. If the first correction value C1 and the second correction value C2 cannot be calculated, the controller 60 ends the control (step S7-12). .
  • the control by the controller 60 may also be performed as follows.
  • step S8-1 when starting the control (step S8-1), the controller 60 of the present embodiment calculates the first correction value C1 by the first calculation unit 61 (step S8-2), correction value C1 is equal to or less than the predetermined value C 0 (step S8-3).
  • step S 8 - 4 If the first correction value C1 is the predetermined value C 0 or more, the controller 60, the first correction value C1 drives the drive unit 46 to be less than a predetermined value (step S 8 - 4), again step S8-2 And step S8-3 is executed. If the first correction value C1 is less than the predetermined value C 0, the controller 60, in the second arithmetic unit 62 calculates the second correction value C2 (step S8-5), the second correction value C2 is a predetermined value It is determined whether it is less than (step S8-6).
  • the controller 60 drives the shutter 80 based on the second correction value C2, and partially blocks the optical path of the laser beam as described above (step S8-8). Thereafter, a laser beam is irradiated onto the TFT formation region 12 of the substrate 10 (step S8-9). Next, the shutter 80 is driven so as to shield the region irradiated with the laser beam (already irradiated region) (step S8-10), and the region not irradiated with the laser beam (unirradiated region) is irradiated with the laser beam (step S8-10). Step S8-11).
  • step S8-12 the controller 60 determines whether the first correction value C1 and the second correction value C2 can be calculated (step S8-12), and the first correction value C1 and the second correction value C2 can be calculated.
  • step S8-2 the controller 60 returns to step S8-2 and repeats a series of controls. If the first correction value C1 and the second correction value C2 cannot be calculated, the controller 60 ends the control (step S8-13). .
  • the second head 43 from the left (or the fifth head 43 from the left) is disposed across the two adjacent cell substrates 13.
  • the directions of the wirings provided on these two cell substrates 13 are slightly shifted. If only one imaging unit is provided and only one alignment mark is provided for one head, the alignment is performed at one location in one head 43. However, the laser annealing process in the region covered by the opening M of the mask 44 is performed at a time. Therefore, when wirings 11 having different orientations exist in the region, only a part of the wirings 11 on the substrate 10 are tracked by the laser annealing apparatus 1, and the wirings 11 having different orientations from the part of the wirings 11 are subjected to laser annealing. It is not followed by the device 1.
  • the said position alignment can be performed based on two places in one head 43, the tracking precision is improved. Therefore, even when there are two wirings 11 with different orientations in a certain area, it is possible to accurately detect the wirings 11 with different orientations. Further, by accurately detecting and following the wiring, the laser annealing process can be performed accurately as will be described later.
  • first mark 47 a and the second mark 47 b are provided on both sides of the opening M of the mask 44 in a direction intersecting the transport direction of the substrate 10, it follows on both sides of the opening M formed on the mask 44.
  • the correct wiring can be detected. That is, the presence of the wiring 11 having different orientations on both sides of the opening M of the mask 44 can be reliably detected, and the tracking accuracy can be improved with higher accuracy.
  • the optical path of the laser beam whose irradiation position is shifted can be blocked by the shutter 80, so that the laser beam to the area other than the TFT formation region 12 can be blocked. Irradiation can be prevented.
  • the light irradiation apparatus includes: a light source; a transport unit that transports a substrate having a surface to be irradiated with light from the light source at a constant speed along a predetermined direction; and the light from the light source.
  • An optical path correction unit that corrects the optical path of the light based on a first correction value so that the light from the light source is not irradiated outside the predetermined area of the surface.
  • An optical path blocking unit that blocks the optical path of the first image of the plurality of wirings provided on the surface along the transport direction of the substrate or the vertical direction thereof.
  • a first imaging unit that captures a second image of the plurality of wirings, and a first calculation that calculates the first correction value based on the first image And based on the second image
  • a second calculation unit for calculating the second correction value, a first optical path control unit for controlling the optical path correction unit based on the first correction value, and the optical path blocking unit based on the second correction value.
  • a controller having a second optical path control unit to be controlled.
  • the first imaging unit and the second imaging unit are provided. Therefore, the position of the light irradiated on the surface of the substrate can be adjusted based on the two information, and therefore the light irradiation position on the substrate being transported can be set with high accuracy. Further, when it is detected that a tracking shift has occurred, the optical path of the laser beam whose irradiation position is shifted can be blocked by the shutter 80, so that it is possible to prevent the laser beam from being irradiated to areas other than the TFT formation region 12. .
  • the optical path correction unit includes a mask in which an opening is formed, a lens array for collecting light from the light source that has passed through the opening, and the first wiring in the first image. And a head provided with a first mark imaged together with the second wiring in the second image; and the head along a direction intersecting the transport direction. It is preferable to include a drive unit that moves.
  • the first mark and the second mark for alignment are provided in one head corresponding to each of the first imaging unit and the second imaging unit. Therefore, it is possible to perform alignment between the TFT formation region and the lens array in two places in one head, and accordingly, light irradiation following the substrate being transported can be performed with high accuracy. If only one imaging unit is provided and only one alignment mark is provided for one head, the accuracy of the alignment should be confirmed only at one location within one head. Can do. However, since the head performs laser annealing in a certain area at a time, if there are wirings in different directions in this certain area, light irradiation that follows only a part of the wiring on the substrate is performed. Does not follow the wiring whose direction is different from that of some of the wirings. On the other hand, in the configuration of the above embodiment, since the accuracy of the alignment can be confirmed at two locations in one head, the detection accuracy of the tracking accuracy can be improved.
  • the first mark and the second mark may be provided on both sides of the opening of the mask in a direction intersecting with the transport direction of the substrate.
  • the first imaging unit may image the first wiring and the first mark in the same visual field
  • the second imaging unit images the second wiring and the second mark in the same visual field. Also good.
  • the first calculation unit uses, as the first correction value, a shift in the direction that intersects the transport direction between the first wiring and the first mark in the first image.
  • the second calculation unit calculates a shift in the direction intersecting the transport direction between the second wiring and the second mark in the second image as the second correction value. It is preferable.
  • the controller is configured such that at least one of the first correction value, the second correction value, and the difference value between the first correction value and the second correction value is less than a predetermined value. It is preferable to further include a determination unit that determines whether or not there is.
  • At least one of the first optical path control unit and the second optical path control unit is controlled based on a determination result by the determination unit.
  • the optical path blocking unit includes an optical path blocking unit that blocks an optical path of the light irradiated to other than the surface, and a second driving unit that moves the optical path blocking unit.

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Abstract

La présente invention concerne un dispositif d'émission de lumière (1) qui comprend : une unité de transport (20) destinée à transporter une carte, une source de lumière (30), une première unité d'imagerie (50a), une seconde unité d'imagerie (50b), une unité d'entraînement (46), un dispositif de commande (60), une unité de correction de trajet optique (43, 46), et une unité de blocage de trajet optique (80). Le dispositif de commande (60) est équipé : d'une première unité de calcul (61) pour calculer une première valeur de correction C1 sur la base d'une image capturée par la première unité d'imagerie (50a) ; une première unité de commande de trajet optique (65) pour commander l'unité de correction de trajet optique (43, 46) sur la base de la première valeur de correction C1 ; une seconde unité de calcul (62) pour calculer une seconde valeur de correction C2 sur la base d'une image capturée par la seconde unité d'imagerie (50b) ; et une seconde unité de commande de trajet optique (66) pour commander l'unité de blocage de trajet optique (80) sur la base de la seconde valeur de correction C2. Par conséquent, la précision avec laquelle le dispositif d'émission de lumière (1) émet de la lumière par rapport aux fils sur la carte est améliorée.
PCT/JP2017/015364 2017-04-14 2017-04-14 Dispositif d'émission de lumière WO2018189900A1 (fr)

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PCT/JP2017/015364 WO2018189900A1 (fr) 2017-04-14 2017-04-14 Dispositif d'émission de lumière

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354463A (ja) * 1998-06-04 1999-12-24 Toshiba Corp レーザアニール装置及び多結晶半導体膜の製造方法
JP2005347741A (ja) * 2004-05-06 2005-12-15 Semiconductor Energy Lab Co Ltd レーザ照射装置
JP2007214388A (ja) * 2006-02-09 2007-08-23 Shimadzu Corp 結晶化装置、および位置決めステージ
JP2010283073A (ja) * 2009-06-03 2010-12-16 V Technology Co Ltd レーザアニール方法及びレーザアニール装置
JP2013041938A (ja) * 2011-08-12 2013-02-28 V Technology Co Ltd レーザードーピング方法及びレーザードーピング装置
JP2016219581A (ja) * 2015-05-19 2016-12-22 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354463A (ja) * 1998-06-04 1999-12-24 Toshiba Corp レーザアニール装置及び多結晶半導体膜の製造方法
JP2005347741A (ja) * 2004-05-06 2005-12-15 Semiconductor Energy Lab Co Ltd レーザ照射装置
JP2007214388A (ja) * 2006-02-09 2007-08-23 Shimadzu Corp 結晶化装置、および位置決めステージ
JP2010283073A (ja) * 2009-06-03 2010-12-16 V Technology Co Ltd レーザアニール方法及びレーザアニール装置
JP2013041938A (ja) * 2011-08-12 2013-02-28 V Technology Co Ltd レーザードーピング方法及びレーザードーピング装置
JP2016219581A (ja) * 2015-05-19 2016-12-22 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタの製造方法

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