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WO2018184331A1 - 一种显示面板和显示装置 - Google Patents

一种显示面板和显示装置 Download PDF

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Publication number
WO2018184331A1
WO2018184331A1 PCT/CN2017/096719 CN2017096719W WO2018184331A1 WO 2018184331 A1 WO2018184331 A1 WO 2018184331A1 CN 2017096719 W CN2017096719 W CN 2017096719W WO 2018184331 A1 WO2018184331 A1 WO 2018184331A1
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Prior art keywords
layer
light
light emitting
substrate
disposed
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PCT/CN2017/096719
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English (en)
French (fr)
Inventor
陈猷仁
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/500,044 priority Critical patent/US10971704B2/en
Publication of WO2018184331A1 publication Critical patent/WO2018184331A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel and a display device.
  • AMOLED Active-matrix organic light emitting diode
  • the AMOLED display is mainly controlled by a specific TFT to adjust the switching and brightness of the OLED device, and the screen display is performed after adjusting the ratio of the three primary colors.
  • the control TFT often uses a metal oxide semiconductor, which not only has a high on-state current and a low off-state current, but also has a high uniformity and high stability.
  • the pixel is defined by a Pixel Definition Layer (PDL) layer, and then the process of the light-emitting layer is performed.
  • PDL Pixel Definition Layer
  • This traditional process has a large number of processes and complicated processes.
  • the pixel definition layer is omitted, the self-luminous panel may be unevenly displayed or mixed, which may affect the display effect.
  • the technical problem to be solved by the present application is to provide a display panel that improves display performance.
  • a display panel the display panel includes:
  • Active switch disposed on the substrate
  • a light emitting layer disposed on the active switch
  • a light shielding layer is disposed between the substrate and the light emitting layer, and the light shielding layer is provided with a light transmissive area corresponding to an orthographic projection area of the light emitting layer on the substrate, and the light transmissive area is displayed Panel Pixels are defined.
  • the substrate is covered with a buffer layer and a passivation layer, an interlayer dielectric layer is disposed between the buffer layer and the passivation layer, and a flat layer is disposed between the passivation layer and the light-emitting layer.
  • a layer, the light emitting layer comprising a light emitting device, the light shielding layer correcting light of the light emitting device.
  • the setting of the passivation layer can protect the active switch very well, further extending the service life of the display panel; the light shielding layer blocks the uneven display of the edge of the luminescent layer, and only emits light that is uniform and conforms to the design. , effectively preventing the display unevenness or color mixing phenomenon of the self-luminous display panel, thereby ensuring the display effect of the self-luminous display panel.
  • the light emitting device is a white organic light emitting diode, and the upper surface or the lower surface of the passivation layer is provided with a color photoresist layer, and the color photoresist layer is disposed corresponding to the white organic light emitting diode.
  • the orthographic projection area of the white organic light emitting diode on the substrate is larger than the orthographic projection area of the color photoresist layer on the substrate, and the orthographic projection of the white organic light emitting diode on the substrate can completely cover the orthographic projection of the color photoresist layer on the substrate.
  • the light emitted by the white organic light emitting diode can pass through the color photoresist layer very well, so that the display effect of the display panel can be improved very well; at the same time, the technical difficulty and the manufacturing cost of the white organic light emitting diode are low, and the display panel is easy to implement. Commercialization.
  • the light emitting device is a color organic light emitting diode.
  • the color organic light emitting diode has better luminous efficiency than the white organic light emitting diode, and the brightness and contrast are superior to the white organic light emitting diode, and the thickness of the display panel can be effectively reduced, so that the display panel is more light and thin, and has more Good hungry market competitiveness.
  • the active switch includes a semiconductor layer, a source and a drain, the semiconductor layer is disposed between the buffer layer and the interlayer dielectric layer, and one end of the source and the drain are disposed at Between the passivation layer and the interlayer dielectric layer, the other ends of the source and the drain are respectively connected to the two ends of the semiconductor layer through the interlayer dielectric layer.
  • the active switch includes a gate, the gate is disposed in the interlayer dielectric layer, and a gate insulating layer is disposed between the gate and the semiconductor layer.
  • the gate is placed between the source and the drain to provide a good shading effect.
  • the semiconductor layer is an indium gallium zinc oxide thin film layer.
  • the power consumption of the display panel can be effectively reduced, thereby saving power and saving environmental protection, and the carrier mobility is 20 to 30 of amorphous silicon.
  • Double can greatly improve the charge and discharge rate of the active switch 2 on the pixel electrode, improve the response speed of the pixel, achieve a faster refresh rate, and at the same time, the faster response also greatly improves the line scan rate of the pixel, so that the resolution can reach the full High-definition and even ultra-HD level.
  • the source is connected to the light shielding layer through the buffer layer.
  • the light of the illuminating layer can be shielded very effectively, and the light of the illuminating layer is effectively prevented from leaking light in the active switch, thereby effectively alleviating uneven display or color mixing, so that the display panel has a better display effect. Thereby, the display effect of the display panel is further improved.
  • the light source layer is also disposed between the source and the drain between the orthographic projections of the substrate, and the light shielding layer fills the source and the drain in the substrate in the A gap between the orthographic projections of the substrate.
  • the light of the light-emitting layer is irradiated onto the source and the drain, the source and the drain effectively block the light, and the light of the light-emitting layer is irradiated to the position between the source and the drain, and the gate can be excellent at first.
  • the light is blocked, and the opaque layer is not occluded to the light shielding layer, and the light shielding layer is spaced between the substrate filling source and the drain between the orthographic projection of the substrate, which can effectively block the light of the luminescent layer and effectively prevent
  • the light of the illuminating layer leaks light in the active switch, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • the present application also discloses a display device including the display panel as described above.
  • the application of the light shielding layer to define the pixels of the self-luminous display panel can reduce the pixel definition layer process of the conventional self-luminous display panel, the pixel definition layer can be prevented from being affected by the previous process, and the display can be realized.
  • the effective protection of the panel makes the display panel have a better display effect, thereby further improving the display effect of the display panel; and the pixels of the self-luminous display panel are defined by the light shielding layer, and the edge of the luminescent layer is unevenly displayed.
  • FIG. 1 is a schematic cross-sectional view of a display panel designed by the inventor of the embodiment of the present application;
  • FIG. 2 is a schematic cross-sectional view of a display panel designed by the inventor of the embodiment of the present application
  • FIG. 3 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 4 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 5 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning is two or more.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise specifically defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meanings of the above terms in the present application can be understood in the specific circumstances for those skilled in the art.
  • the applicant designed an unpublished display panel.
  • the commonly used structures of the oxide semiconductor active switch 2 array have an etch barrier, a back channel etch, a coplanar self-aligned top gate, and Double gate machine and other structures.
  • the coplanar self-aligned top gate does not need to consider the channel etching problem, and the self-aligned manner can reduce the channel length and improve the panel resolution.
  • a process is usually formed to form the flat layer 15. After the anode process, the pixels are defined by a pixel defining layer 161 (PDL), and then the process of the luminescent material is performed.
  • PDL pixel defining layer 161
  • the conventional process number is large and the process is complicated.
  • the pixel definition layer 161 is omitted, the self-luminous panel may be unevenly displayed or mixed, which may affect the display effect.
  • the penetration of the flat layer 15 is greatly affected by the temperature in the subsequent process, and the subsequent process of the flat layer 15 is preferably less. Therefore, the applicant provides a new technical solution, which can effectively reduce the subsequent process and improve the display panel of the display effect.
  • the display panel includes: a substrate 1, an active switch 2, and a light-emitting layer 16; a light-shielding layer 11 is disposed between the substrate 1 and the light-emitting layer 16, and the light-shielding layer 11 is provided with a light-transmitting region.
  • the area corresponds to the orthographic projection area of the luminescent layer 16 on the substrate, and the light transmissive area defines the pixels of the display panel.
  • the process of one pixel defining layer 161 of the conventional self-luminous display panel can be reduced, and the pixel defining layer 161 can be prevented from being affected by the previous process, and the pair can be realized.
  • the effective protection of the display panel enables the display panel to have a better display effect, thereby further improving the display effect of the display panel; and the pixels of the self-luminous display panel are defined by the light shielding layer 11 to block the edge display of the light-emitting layer 16
  • the uneven portion only emits light that is uniform and conforms to the design, effectively preventing uneven display or color mixing of the self-luminous display panel, thereby ensuring the display effect of the self-luminous display panel;
  • the layer 161 process While defining the layer 161 process, the negative influence of the temperature in the process of the pixel defining layer 161 on the transmittance of the flat layer 15 is also reduced, and the flat layer 15 can be very well protected, thereby ensuring the display panel. Life and efficiency; optimize the self-luminous display panel structure process, reduce the pixel definition layer 161 process, can be non- It is often good to save production costs, and the process adaptability of the flat layer 15 can be further improved.
  • the substrate 1 is covered with a buffer layer 12 and a passivation layer 14 , and an interlayer dielectric layer 13 is disposed between the buffer layer 12 and the passivation layer 14 .
  • the active switch 2 can effectively shield the light and effectively alleviate the effect. Display uneven or color mixing, so that the display panel has a better display effect.
  • the setting of the passivation layer 14 can protect the active switch 2 very well, further extending the service life of the display panel, and the flat layer 15 is disposed between the passivation layer 14 and the light emitting layer 16, and the light emitting layer 16 includes a light emitting device.
  • the light shielding layer 11 corrects the light of the light emitting device, and the passivation layer 14 blocks the uneven portion of the edge of the light emitting layer 16, and only emits light that is uniform and conforms to the design, thereby effectively preventing uneven display of the self-luminous display panel.
  • the lower surface of the light-emitting layer 16 is provided with a transparent anode 18, that is, the transparent anode 18 is disposed between the light-emitting layer 16 and the flat layer 15, and the transparent anode has various
  • the material can be selected, for example, a transparent conductive material such as a graphene composite material or an indium tin oxide (ITO), and a metal cathode 19 is disposed on the upper surface of the light-emitting layer 16.
  • the light emitting device is a white organic light emitting diode 162, the upper surface of the passivation layer 14 is provided with a color photoresist layer 17, the color photoresist layer 17 is disposed corresponding to the white organic light emitting diode 162, and the white organic light emitting diode 162 is positive on the substrate 1.
  • the projected area is larger than the orthographic projection area of the color photoresist layer 17 on the substrate 1, and the orthographic projection of the white organic light emitting diode 162 on the substrate 1 can completely cover the orthographic projection of the color resist layer 17 on the substrate 1, so that the white organic light is emitted.
  • the light emitted by the diode 162 can pass through the color photoresist layer 17 very well, so that the display effect of the display panel can be improved very well; at the same time, the technical difficulty and the manufacturing cost of the white organic light emitting diode 162 are low, and the display panel is easy to implement. Chemical.
  • the color photoresist layer 17 is provided on the lower surface of the passivation layer 14, that is, the color photoresist layer 17 is disposed between the passivation layer 14 and the interlayer dielectric layer 13, by covering the passivation layer 14 with the active switch 2 and color On the photoresist layer 17, the problem of gas overflow of the color photoresist layer 17 in the subsequent process can be effectively prevented, so that the passivation layer 14 can very well protect the color photoresist layer 17 very well.
  • the life and efficiency of the display panel are ensured, and the steps of the process are not required, and the style of the current mask is not changed, and only the process mask sequence needs to be changed, thereby effectively protecting the display panel, so that the display panel is It has a better display effect, which further improves the display effect of the display panel.
  • the active switch 2 includes a semiconductor layer 24, a source 22, and a drain 23.
  • the semiconductor layer 24 is disposed between the buffer layer 12 and the interlayer dielectric layer 13.
  • One end of the source 22 and the drain 23 are disposed on the passivation layer 14.
  • the active switch 2 includes a gate 21, and the gate 21 is provided at the layer In the dielectric layer 13, a gate insulating layer 25 is provided between the gate electrode 21 and the semiconductor layer 24.
  • the gate electrode 21 is provided between the source electrode 22 and the drain electrode 23, and also has a good light shielding effect.
  • the semiconductor layer 24 is an oxide thin film layer, and the oxide thin film layer may be made of ZnO, Zn-Sn-O, In-Zn-O, MgZnO, In-Ga-O, In2O3, etc., and these materials may be prepared by using magnetic materials. Controlled sputtering, pulsed laser deposition, electron beam evaporation and other methods are prepared. Compared with the conventional amorphous silicon, the carrier mobility is low and the photosensitivity is strong.
  • the oxide thin film layer has a high current carrying capacity.
  • active switch 2 with oxide film layer has higher switching current ratio and higher field Effect Mobility, fast response, large drive current, large-area display panel can be prepared; active switch 2 with oxide film layer can be prepared at room temperature, and flexible substrate can be used at low preparation temperature. This leads to the emergence of flexible displays, which are more portable, lighter, and more resistant to falling than existing display technologies, and oxide semiconductors are the most suitable semiconductor materials for flexible displays.
  • the oxide thin film layer adopts an indium gallium zinc oxide thin film layer, and the indium gallium zinc oxide thin film layer is disposed, which can effectively reduce the power consumption of the display panel, thereby saving power and saving environmental protection.
  • its carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly improve the charge and discharge rate of the active switch 2 to the pixel electrode, improve the response speed of the pixel, achieve faster refresh rate, and faster response.
  • the pixel scanning rate is greatly improved, so that the resolution can reach the full HD (Ultra HD) level or even the Ultra Definition level; in addition, the display panel is reduced due to the reduced number of transistors and the transmittance of each pixel. It has a higher level of energy efficiency and higher efficiency.
  • the existing amorphous silicon production line is produced with only minor modifications, so it is more competitive in terms of cost than low-temperature polysilicon.
  • the source 22 is connected to the light shielding layer 11 through the buffer layer 12, which can effectively block the light of the light-emitting layer 16, effectively preventing the light of the light-emitting layer 16 from leaking light in the active switch 2, effectively alleviating the display.
  • the phenomenon of uniform or color mixing makes the display panel have a better display effect, thereby further improving the display effect of the display panel.
  • the source 22 and the drain 23 are also provided with a light shielding layer 11 between the orthographic projections of the substrate 1, and the light shielding layer 11 fills the gap between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1 to emit light.
  • the light of the layer 16 is irradiated onto the source 22 and the drain 23, and the source 22 and the drain 23 effectively block the light, and the light of the light-emitting layer 16 is irradiated to the position between the source 22 and the drain 23, firstly
  • the pole 21 can shield the light well, and the opaque layer is irradiated to the light shielding layer 11.
  • the light shielding layer 11 can effectively dissolve the gap between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1.
  • the illuminating of the light of the illuminating layer 16 effectively prevents the light of the illuminating layer 16 from leaking light in the active switch 2, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby Further, the display effect of the display panel is improved; of course, the light shielding layer 11 may not be disposed on the front projection of the gate electrode 21 on the substrate 1, which can effectively save consumables and can greatly reduce the production cost of the display panel. Moreover, the quality of the display panel can be effectively reduced, and the display panel is more convenient to move.
  • the display panel disclosed in the embodiment shown in FIG. 4 includes: a substrate 1, an active switch 2, and a light-emitting layer 16; a light-shielding layer 11 is disposed between the substrate 1 and the light-emitting layer 16, and the light-shielding layer 11 is provided with a light-transmitting region and a light-transmitting region.
  • the light transmissive area defines the pixels of the display panel.
  • the process of one pixel defining layer 161 of the conventional self-luminous display panel can be reduced, and the pixel defining layer 161 can be prevented from being affected by the previous process, and the pair can be realized.
  • the effective protection of the display panel enables the display panel to have a better display effect, thereby further improving the display effect of the display panel; and the pixels of the self-luminous display panel are defined by the light shielding layer 11 to block the edge display of the light-emitting layer 16
  • the uneven portion only emits light that is uniform and conforms to the design, effectively preventing uneven display or color mixing of the self-luminous display panel, thereby ensuring the display effect of the self-luminous display panel;
  • the layer 161 process While defining the layer 161 process, the negative influence of the temperature in the process of the pixel defining layer 161 on the transmittance of the flat layer 15 is also reduced, and the flat layer 15 can be very well protected, thereby ensuring the display panel. Life and efficiency; optimize the self-luminous display panel structure process, reduce the pixel definition layer 161 process, can be non- It is often good to save production costs, and the process adaptability of the flat layer 15 can be further improved.
  • the substrate 1 is covered with a buffer layer 12 and a passivation layer 14 , and an interlayer dielectric layer 13 is disposed between the buffer layer 12 and the passivation layer 14 .
  • the active switch 2 can effectively shield the light and effectively alleviate the effect. Display uneven or color mixing, so that the display panel has a better display effect.
  • the setting of the passivation layer 14 can protect the active switch 2 very well, further extending the service life of the display panel, and the flat layer 15 is disposed between the passivation layer 14 and the light emitting layer 16, and the light emitting layer 16 includes a light emitting device.
  • the light shielding layer 11 corrects the light of the light emitting device; the passivation layer 14 blocks the uneven portion of the edge of the light emitting layer 16, and only emits light that is uniform and conforms to the design, thereby effectively preventing the self.
  • the display of the light-emitting display panel is uneven or mixed, so that the display effect of the self-luminous display panel is well ensured; the transparent anode 18 is disposed on the lower surface of the light-emitting layer 16, that is, the transparent anode 18 is disposed on the light-emitting layer 16 and the flat layer 15.
  • a metal cathode 19 is provided on the upper surface of the light-emitting layer 16.
  • the light emitting device is a color organic light emitting diode 163.
  • the color organic light emitting diode 163 has better light emitting efficiency, and the brightness and contrast are superior to the white organic light emitting diode 162, and the thickness of the display panel can be effectively reduced.
  • the display panel is more light and thin, and has better market competitiveness.
  • the active switch 2 includes a semiconductor layer 24, a source 22, and a drain 23.
  • the semiconductor layer 24 is disposed between the buffer layer 12 and the interlayer dielectric layer 13.
  • One end of the source 22 and the drain 23 are disposed on the passivation layer 14.
  • the active switch 2 includes a gate 21, and the gate 21 is provided at the layer In the dielectric layer 13, a gate insulating layer 25 is provided between the gate electrode 21 and the semiconductor layer 24.
  • the gate electrode 21 is provided between the source electrode 22 and the drain electrode 23, and also has a good light shielding effect.
  • the semiconductor layer 24 is an oxide thin film layer, and the oxide thin film layer may be made of ZnO, Zn-Sn-O, In-Zn-O, MgZnO, In-Ga-O, In2O3, etc., and these materials may be prepared by using magnetic materials. Controlled sputtering, pulsed laser deposition, electron beam evaporation and other methods are prepared. Compared with the conventional amorphous silicon, the carrier mobility is low and the photosensitivity is strong.
  • the oxide thin film layer has a high current carrying capacity.
  • active switch 2 with oxide film layer has higher switching current ratio and higher field
  • the effect mobility, fast response, large drive current, large-area display panel can be prepared, and the active switch 2 with oxide film layer can be prepared at room temperature, and the flexible substrate can be used at low preparation temperature.
  • the oxide thin film layer adopts an indium gallium zinc oxide thin film layer, and the indium gallium zinc oxide thin film layer is disposed, which can effectively reduce the power consumption of the display panel, thereby saving power, which is very It saves environmental protection; and its carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly increase the charge and discharge rate of the active switch 2 to the pixel electrode, improve the response speed of the pixel, achieve faster refresh rate, and faster.
  • the response also greatly increases the pixel's line scan rate, so that the resolution can reach full HD or even ultra-high definition level; in addition, due to the reduced number of transistors and improved light transmittance per pixel, the display panel has higher energy efficiency. Horizontal, and more efficient; at the same time, the use of existing amorphous silicon production line production, with only minor changes, is more competitive in terms of cost than low-temperature polysilicon.
  • the source 22 is connected to the light shielding layer 11 through the buffer layer 12, which can effectively block the light of the light-emitting layer 16, effectively preventing the light of the light-emitting layer 16 from leaking light in the active switch 2, effectively alleviating the display.
  • the phenomenon of uniform or color mixing makes the display panel have a better display effect, thereby further improving the display effect of the display panel.
  • the source 22 and the drain 23 are also provided with a light shielding layer 11 between the orthographic projections of the substrate 1, and the light shielding layer 11 fills the gap between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1 to emit light.
  • the light of the layer 16 is irradiated onto the source 22 and the drain 23, and the source 22 and the drain 23 effectively block the light, and the light of the light-emitting layer 16 is irradiated to the position between the source 22 and the drain 23, firstly
  • the pole 21 can shield the light well, and the opaque layer is irradiated to the light shielding layer 11.
  • the light shielding layer 11 can effectively dissolve the gap between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1.
  • the illuminating of the light of the illuminating layer 16 effectively prevents the light of the illuminating layer 16 from leaking light in the active switch 2, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby further
  • the display effect of the display panel is improved; of course, the light shielding layer 11 may not be disposed at the orthographic projection of the gate electrode 21 on the substrate 1, which can effectively save consumables, and can greatly reduce the production cost of the display panel, and Able to be effective Reduce the quality of the display panel, so that the display panel is more convenient to transport or handling.
  • the passivation layer 14 is modified. Two layers of the passivation layer 14 are provided. The passivation layer 14 is disposed between the planar layer 15 and the interlayer dielectric layer 13, and the color photoresist layer 17 is disposed. Between the two passivation layers 14, the source 22 and the drain 23 are made of a metal material, and the sides of the source 22 and the drain 23 have metal burrs from the microstructure, by providing two layers of passivation.
  • the yield of the display panel is improved; and the color photoresist layer 17 is disposed between the two passivation layers 14, which can protect the color photoresist layer 17 very well, effectively preventing the subsequent process from making the color photoresist layer 17
  • the organic material releases some harmful impurity gases, thereby effectively protecting the display panel and increasing its efficiency and life.
  • the present application further discloses a display device including the above display panel.
  • a display device including the above display panel.
  • the specific structure and connection relationship of the display panel refer to Embodiment 1 to Embodiment 3 and FIGS. 1 to 5 . It will not be detailed here.

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Abstract

一种显示面板，显示面板包括：基板（1）；主动开关（2），设置在基板（1）上；发光层（16），设置在主动开关（2）上；基板（1）和发光层（16）之间设有遮光层（11），遮光层（11）设有透光区域，透光区域与发光层（16）在基板（1）上的正投影区域相对应，透光区域对显示面板的像素进行定义。

Description

一种显示面板和显示装置 【技术领域】
本申请涉及显示技术领域，尤其涉及一种显示面板和显示装置。
【背景技术】
主动矩阵有机发光二极体(Active-matrix organic light emitting diode，AMOLED)显示屏具有高对比度、广色域、响应速度快等特点。由于AMOLED具自发光的特色，不需使用背光板，因此比AMLCD更能够做得更轻薄甚至柔性。AMOLED显示屏的主要通过特定的TFT进行控制调节OLED器件的开关和亮度，在调节三原色的比例之后进行画面显示。其中，控制TFT往往采用金属氧化物半导体，其不仅有较高的开态电流和较低的关态电流，还有均匀性和稳定性较高的特点。
经过阳极制程后，再用像素定义层(Pixel Definition Layer，PDL)层对像素进行定义，接着进行发光层的制程。此传统的制程道数较多，制程复杂，但若省去像素定义层会造成自发光面板显示不均或混色，影响显示效果。
【发明内容】
本申请所要解决的技术问题是提供一种提高显示效果的显示面板。
本申请的目的是通过以下技术方案来实现的：
本申请的目的是通过以下技术方案来实现的：一种显示面板，所述显示面板包括：
基板；
主动开关，设置在基板上；
发光层，设置在主动开关上；
所述基板和发光层之间设有遮光层，所述遮光层设有透光区域，所述透光区域与所述发光层在基板上的正投影区域相对应，所述透光区域对显示面板的 像素进行定义。
其中，所述基板上覆盖设置有缓冲层和钝化层，所述缓冲层与所述钝化层之间设有层间介质层，所述钝化层与所述发光层之间设有平坦层，所述发光层包括发光器件，所述遮光层对所述发光器件的光线进行修正。这样，钝化层的设置能够非常好的对主动开关进行保护，进一步的延长了显示面板的使用寿命；遮光层遮挡了发光层边缘显示不均的部分，只发出显示均匀且与设计相符的光线，有效的防止了自发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果。
其中，所述发光器件为白色有机发光二极管，所述钝化层的上表面或下表面设有彩色光阻层，所述彩色光阻层与所述白色有机发光二极管相对应设置。这样，白色有机发光二极管在基板上的正投影面积大于彩色光阻层在基板上的正投影面积，而且白色有机发光二极管在基板上的正投影能够完全覆盖彩色光阻层在基板上的正投影，使得白色有机发光二极管发射的光线能够非常好的穿过彩色光阻层，从而可以非常好的提高显示面板的显示效果；同时白色有机发光二极管的技术难度和制造成本较低，易于实现显示面板的商品化。
其中，所述发光器件为彩色有机发光二极管。这样，相对于白色有机发光二极管，彩色有机发光二极管的发光效率更好，其亮度和对比度都优于白色有机发光二极管，而且能够有效的降低显示面板的厚度，使得显示面板更加的轻薄，具有更好饿市场竞争力。
其中，所述主动开关包括半导体层、源极、漏极，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层分别连接在半导体层的两端。
其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。这样，栅极设在源极和漏极之间的位置，也能起到很好的遮光作用。
其中，所述半导体层为铟镓锌氧化物薄膜层。这样，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关2对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清乃至超高清级别程度。
其中，所述源极穿过所述缓冲层与所述遮光层相连接。这样，能够非常有效的对发光层的光线进行遮挡，有效的防止了发光层的光线在主动开关出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
其中，所述源极和所述漏极在所述基板的正投影之间也设有所述遮光层，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。这样，发光层的光线照射到源极和漏极上，源极和漏极对光线进行有效的遮挡，发光层的光线照射到源极和漏极之间的位置，首先栅极能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层，遮光层在基板填充源极和漏极在基板的正投影之间的间隔空隙，能够非常有效的对发光层的光线进行遮挡，有效的防止了发光层的光线在主动开关出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
根据本申请的另一个方面，本申请还公开了一种显示装置，所述显示装置包括如上所述的显示面板。
本申请由于运用遮光层对自发光显示面板的像素进行定义，可减少传统自发光显示面板的一道像素定义层制程，亦能防止像素定义层制成对前面的制程造成的影响，可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；而且用遮光层对自发光显示面板的像素进行定义，遮挡了发光层边缘显示不均的部分，只发出显示均匀且 与设计相符的光线，有效的防止了自发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果；同时在减少像素定义层制程的同时，也减小了像素定义层制程中的温度对平坦层穿透率的负面影响，能够非常好的对平坦层进行非常好的保护，从而保证了显示面板的寿命和效率；优化自发光显示面板结构制程，减少像素定义层制程，能够非常好的节约生产成本，也能进一步的提高平坦层的制程适应性能。
【附图说明】
图1是本申请实施例的发明人设计的显示面板的剖面示意图；
图2是本申请实施例的发明人设计的显示面板的剖面示意图；
图3是本申请实施例的另一实施例方式的显示面板的剖面示意图；
图4是本申请实施例的另一实施例方式的显示面板的剖面示意图；
图5是本申请实施例的另一实施例方式的显示面板的剖面示意图。
【具体实施方式】
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含 义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步说明。
下面结合附图和较佳的实施例对本申请作进一步说明。
如图1和图2所示，申请人设计了一款未公开的显示面板，氧化物半导体主动开关2阵列常用的结构有刻蚀阻挡,背沟道刻蚀，共平面自对准顶栅以及双栅机等结构。其中共平面自对准顶栅无需考虑沟道刻蚀问题，且自对准的方式能减小沟道长度，提高面板分辨率。在自发光显示面板结构中，往往会先有一道制程形成平坦层15，经过阳极制程后，再用像素定义层161(Pixel Definition Layer，PDL)对像素进行定义，接着进行发光材料的制程。
申请人进一步研究发现，此传统的制程道数较多，制程复杂，但若省去像素定义层161会造成自发光面板显示不均或混色，影响显示效果。且平坦层15的穿透在后续制程受温度影响较大，平坦层15后续制程越少为佳。因此，申请人提供一种新的技术方案，可以有效的减少后续制程，提高显示效果的显示面板。
下面参考附图描述本申请实施例的显示面板结构示意图。
如图3所示的实施例，该显示面板包括：基板1、主动开关2和发光层16；基板1和发光层16之间设有遮光层11，遮光层11设有透光区域，透光区域与发光层16在基板上的正投影区域相对应，透光区域对显示面板的像素进行定义。
通过运用遮光层11对自发光显示面板的像素进行定义，可减少传统自发光显示面板的一道像素定义层161制程，亦能防止像素定义层161制成对前面的制程造成的影响，可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；而且用遮光层11对自发光显示面板的像素进行定义，遮挡了发光层16边缘显示不均的部分，只发出显示均匀且与设计相符的光线，有效的防止了自发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果；同时在减少像素定义层161制程的同时，也减小了像素定义层161制程中的温度对平坦层15穿透率的负面影响，能够非常好的对平坦层15进行非常好的保护，从而保证了显示面板的寿命和效率；优化自发光显示面板结构制程，减少像素定义层161制程，能够非常好的节约生产成本，也能进一步的提高平坦层15的制程适应性能。
基板1上覆盖设置有缓冲层12和钝化层14，缓冲层12与钝化层14之间设有层间介质层13，主动开关2能够非常好的起到遮光的作用，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果。
钝化层14的设置能够非常好的对主动开关2进行保护，进一步的延长了显示面板的使用寿命，钝化层14与发光层16之间设有平坦层15，发光层16包括发光器件，遮光层11对发光器件的光线进行修正，钝化层14遮挡了发光层16边缘显示不均的部分，只发出显示均匀且与设计相符的光线，有效的防止了自发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果；发光层16下表面设有透明阳极18，即透明阳极18设在发光层16与平坦层15之间，透明阳极有多种材料可供选择，例如可以采用石墨烯复合材料、铟锡氧化物(Indium tin oxide，ITO)等透明导电材料制作，发光层16上表面设有金属阴极19。
发光器件为白色有机发光二极管162，钝化层14的上表面设有彩色光阻层17，彩色光阻层17与白色有机发光二极管162相对应设置，白色有机发光二极管162在基板1上的正投影面积大于彩色光阻层17在基板1上的正投影面积，而且白色有机发光二极管162在基板1上的正投影能够完全覆盖彩色光阻层17在基板1上的正投影，使得白色有机发光二极管162发射的光线能够非常好的穿过彩色光阻层17，从而可以非常好的提高显示面板的显示效果；同时白色有机发光二极管162的技术难度和制造成本较低，易于实现显示面板的商品化。
若彩色光阻层17设在钝化层14的下表面，即彩色光阻层17设在钝化层14与层间介质层13之间，通过将钝化层14覆盖于主动开关2和彩色光阻层17上，能有效防止彩色滤光片在后续制程中彩色光阻层17的气体溢出问题的出现，使得钝化层14能够非常好的对彩色光阻层17进行非常好的保护，从而保证了显示面板的寿命和效率，而且不需要增加制程的步骤，也不需要改变目前光罩的样式，仅需改变制程光罩顺序，即可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
主动开关2包括半导体层24、源极22、漏极23，，半导体层24设在缓冲层12与层间介质层13之间，源极22和漏极23的一端均设在钝化层14和层间介质层13之间，源极22和漏极23的另一端穿过层间介质层13分别连接在半导体层24的两端；主动开关2包括栅极21，栅极21设在层间介质层13内，栅极21和半导体层24之间设有栅极绝缘层25，栅极21设在源极22和漏极23之间的位置，也能起到很好的遮光作用。
半导体层24为氧化物薄膜层，氧化物薄膜层可以采用的材料有ZnO，Zn-Sn-O,In-Zn-O,MgZnO,In-Ga-O,In2O3等，这些材料的制备可以采用磁控溅射，脉冲激光沉积，电子束蒸发等方法制备，相对于传统的非晶硅存在着载流子迁移率较低，光敏性强的问题，氧化物薄膜层薄膜层具有较高的载流子迁移率特性，而且在均匀性和稳定性等方面都具有明显的优势，显示出了巨大的应用前景；采用氧化物薄膜层的主动开关2具有较高的开关电流花比和较高的场效应 迁移率，响应速度快，能够实现较大的驱动电流，可以制备大面积的显示面板；而且采用氧化物薄膜层的主动开关2可在室温下制备，低的制备温度就可以使用柔性衬底，从而导致柔性显示的出现，柔性显示技术与现有的显示技术相比具有更便携，更轻，更耐摔等，而采用氧化物半导体是最适合用于柔性显示的半导体材料。
可选的，氧化物薄膜层采用铟镓锌氧化物薄膜层，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关2对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清(full HD)乃至超高清(Ultra Definition)级别程度；另外，由于晶体管数量减少和提高了每个像素的透光率，使得显示面板具有更高的能效水平，而且效率更高；同时，利用现有的非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
源极22穿过缓冲层12与遮光层11相连接，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
源极22和漏极23在基板1的正投影之间也设有遮光层11，且遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，发光层16的光线照射到源极22和漏极23上，源极22和漏极23对光线进行有效的遮挡，发光层16的光线照射到源极22和漏极23之间的位置，首先栅极21能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层11，遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而 进一步的提高了显示面板的显示效果；当然也可以在栅极21在基板1上的正投影处不设置遮光层11，这样能够非常有效的节省耗材，能够非常好的降低显示面板的生产成本，而且能够有效的降低显示面板的质量，使得显示面板更加的方便移动。
图4所示的实施方式公开的显示面板包括：基板1、主动开关2和发光层16；基板1和发光层16之间设有遮光层11，遮光层11设有透光区域，透光区域与发光层16在基板上的正投影区域相对应，透光区域对显示面板的像素进行定义。
通过运用遮光层11对自发光显示面板的像素进行定义，可减少传统自发光显示面板的一道像素定义层161制程，亦能防止像素定义层161制成对前面的制程造成的影响，可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；而且用遮光层11对自发光显示面板的像素进行定义，遮挡了发光层16边缘显示不均的部分，只发出显示均匀且与设计相符的光线，有效的防止了自发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果；同时在减少像素定义层161制程的同时，也减小了像素定义层161制程中的温度对平坦层15穿透率的负面影响，能够非常好的对平坦层15进行非常好的保护，从而保证了显示面板的寿命和效率；优化自发光显示面板结构制程，减少像素定义层161制程，能够非常好的节约生产成本，也能进一步的提高平坦层15的制程适应性能。
基板1上覆盖设置有缓冲层12和钝化层14，缓冲层12与钝化层14之间设有层间介质层13，主动开关2能够非常好的起到遮光的作用，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果。
钝化层14的设置能够非常好的对主动开关2进行保护，进一步的延长了显示面板的使用寿命，钝化层14与发光层16之间设有平坦层15，发光层16包括发光器件，遮光层11对发光器件的光线进行修正；钝化层14遮挡了发光层16边缘显示不均的部分，只发出显示均匀且与设计相符的光线，有效的防止了自 发光显示面板的显示不均或混色现象，从而很好的保证了自发光显示面板的显示效果；发光层16下表面设有透明阳极18，即透明阳极18设在发光层16与平坦层15之间，发光层16上表面设有金属阴极19。
发光器件为彩色有机发光二极管163，相对于白色有机发光二极管162，彩色有机发光二极管163的发光效率更好，其亮度和对比度都优于白色有机发光二极管162，而且能够有效的降低显示面板的厚度，使得显示面板更加的轻薄，具有更好的市场竞争力。
主动开关2包括半导体层24、源极22、漏极23，，半导体层24设在缓冲层12与层间介质层13之间，源极22和漏极23的一端均设在钝化层14和层间介质层13之间，源极22和漏极23的另一端穿过层间介质层13分别连接在半导体层24的两端；主动开关2包括栅极21，栅极21设在层间介质层13内，栅极21和半导体层24之间设有栅极绝缘层25，栅极21设在源极22和漏极23之间的位置，也能起到很好的遮光作用。
半导体层24为氧化物薄膜层，氧化物薄膜层可以采用的材料有ZnO，Zn-Sn-O,In-Zn-O,MgZnO,In-Ga-O,In2O3等，这些材料的制备可以采用磁控溅射，脉冲激光沉积，电子束蒸发等方法制备，相对于传统的非晶硅存在着载流子迁移率较低，光敏性强的问题，氧化物薄膜层薄膜层具有较高的载流子迁移率特性，而且在均匀性和稳定性等方面都具有明显的优势，显示出了巨大的应用前景；采用氧化物薄膜层的主动开关2具有较高的开关电流花比和较高的场效应迁移率，响应速度快，能够实现较大的驱动电流，可以制备大面积的显示面板；而且采用氧化物薄膜层的主动开关2可在室温下制备，低的制备温度就可以使用柔性衬底，从而导致柔性显示的出现，柔性显示技术与现有的显示技术相比具有更便携，更轻，更耐摔等，而采用氧化物半导体是最适合用于柔性显示的半导体材料。
可选的，氧化物薄膜层采用铟镓锌氧化物薄膜层，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常 的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关2对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清乃至超高清级别程度；另外，由于晶体管数量减少和提高了每个像素的透光率，使得显示面板具有更高的能效水平，而且效率更高；同时，利用现有的非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
源极22穿过缓冲层12与遮光层11相连接，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
源极22和漏极23在基板1的正投影之间也设有遮光层11，且遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，发光层16的光线照射到源极22和漏极23上，源极22和漏极23对光线进行有效的遮挡，发光层16的光线照射到源极22和漏极23之间的位置，首先栅极21能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层11，遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；当然也可以在栅极21在基板1上的正投影处不设置遮光层11，这样能够非常有效的节省耗材，能够非常好的降低显示面板的生产成本，而且能够有效的降低显示面板的质量，使得显示面板更加的方便运输或搬运。
如图5所示，本实施例对钝化层14进行改进，将钝化层14两层，钝化层14设在平坦层15和层间介质层13之间，彩色光阻层17设在两层钝化层14之间，源极22和漏极23为金属材料制成，源极22和漏极23的侧边从微结构来看都有金属毛刺的现象，通过设置两层钝化层14，能够更好的对金属层上的金 属毛刺进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对金属层进行保护，有效的避免后续的制程对源极22和漏极23的影响，从而非常好的提高显示面板的良品率；而且将彩色光阻层17设在两层钝化层14之间，能够非常好的对彩色光阻层17进行保护，有效的防止后续制程使彩色光阻层17的有机材料释放出一些有害杂质气体，从而实现对显示面板的有效保护，增加其效率及寿命。
根据本申请的另一个方面，本申请还公开了一种显示装置，显示装置包括如上的显示面板，关于显示面板的具体结构和连接关系可参见实施例一至实施例三以及图1至图5，在此不再一一详述。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种显示面板，包括：
    基板；
    主动开关，设置在基板上；
    发光层，设置在所述主动开关上；
    所述基板和发光层之间设有遮光层，所述遮光层设有透光区域，所述透光区域与所述发光层在基板上的正投影区域相对应，所述透光区域对显示面板的像素进行定义；所述基板上覆盖设置有缓冲层和钝化层，所述缓冲层与所述钝化层之间设有层间介质层，所述钝化层与所述发光层之间设有平坦层，所述发光层包括发光器件，所述遮光层对所述发光器件的光线进行修正；所述发光器件为彩色有机发光二极管；所述源极和所述漏极在所述基板的正投影之间也设有所述遮光层，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
  2. 一种显示面板，包括：
    基板；
    主动开关，设置在基板上；
    发光层，设置在所述主动开关上；
    所述基板和发光层之间设有遮光层，所述遮光层设有透光区域，所述透光区域与所述发光层在基板上的正投影区域相对应，所述透光区域对显示面板的像素进行定义。
  3. 如权利要求2所述的一种显示面板，其中，所述基板上覆盖设置有缓冲层和钝化层，所述缓冲层与所述钝化层之间设有层间介质层，所述钝化层与所述发光层之间设有平坦层，所述发光层包括发光器件，所述遮光层对所述发光器件的光线进行修正。
  4. 如权利要求3所述的一种显示面板，其中，所述发光器件为白色有机发 光二极管，所述钝化层的上表面或下表面设有彩色光阻层，所述彩色光阻层与所述白色有机发光二极管相对应设置。
  5. 如权利要求3所述的一种显示面板，其中，所述发光器件为彩色有机发光二极管。
  6. 如权利要求2所述的一种显示面板，其中，所述主动开关包括半导体层、源极、漏极，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层分别连接在半导体层的两端。
  7. 如权利要求6所述的一种显示面板，其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。
  8. 如权利要求6所述的一种显示面板，其中，所述半导体层为铟镓锌氧化物薄膜层。
  9. 如权利要求6所述的一种显示面板，其中，所述源极穿过所述缓冲层与所述遮光层相连接。
  10. 如权利要求6所述的一种显示面板，其中，所述源极和所述漏极在所述基板的正投影之间也设有所述遮光层，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
  11. 一种显示装置，其中，所述显示装置包括显示面板，所述显示面板包括：
    基板；
    主动开关，设置在基板上；
    发光层，设置在所述主动开关上；
    所述基板和发光层之间设有遮光层，所述遮光层设有透光区域，所述透光区域与所述发光层在基板上的正投影区域相对应，所述透光区域对显示面板的像素进行定义。
  12. 如权利要求11所述的一种显示装置，其中，所述基板上覆盖设置有缓 冲层和钝化层，所述缓冲层与所述钝化层之间设有层间介质层，所述钝化层与所述发光层之间设有平坦层，所述发光层包括发光器件，所述遮光层对所述发光器件的光线进行修正。
  13. 如权利要求12所述的一种显示装置，其中，所述发光器件为白色有机发光二极管，所述钝化层的上表面或下表面设有彩色光阻层，所述彩色光阻层与所述白色有机发光二极管相对应设置。
  14. 如权利要求12所述的一种显示装置，其中，所述发光器件为彩色有机发光二极管。
  15. 如权利要求11所述的一种显示装置，其中，所述主动开关包括半导体层、源极、漏极，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层分别连接在半导体层的两端。
  16. 如权利要求15所述的一种显示装置，其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。
  17. 如权利要求15所述的一种显示装置，其中，所述半导体层为氧化物薄膜层。
  18. 如权利要求17所述的一种显示装置，其中，所述氧化物薄膜层为铟镓锌氧化物薄膜层。
  19. 如权利要求15所述的一种显示装置，其中，所述源极穿过所述缓冲层与所述遮光层相连接。
  20. 如权利要求15所述的一种显示装置，其中，所述源极和所述漏极在所述基板的正投影之间也设有所述遮光层，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
PCT/CN2017/096719 2017-04-07 2017-08-10 一种显示面板和显示装置 WO2018184331A1 (zh)

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107154419A (zh) * 2017-04-06 2017-09-12 惠科股份有限公司 显示面板及其制造方法
CN107359188A (zh) * 2017-08-28 2017-11-17 惠科股份有限公司 显示面板及其制造方法
CN109508577A (zh) * 2017-09-14 2019-03-22 上海箩箕技术有限公司 显示模组
CN108766976B (zh) * 2018-05-21 2020-08-14 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
CN109360840B (zh) * 2018-09-28 2020-11-03 武汉天马微电子有限公司 有机发光显示面板和显示装置
CN109638078B (zh) * 2018-11-09 2020-12-08 深圳市华星光电半导体显示技术有限公司 Tft的制备方法、tft、oled背板和显示装置
CN110992835B (zh) * 2019-12-20 2022-06-17 京东方科技集团股份有限公司 阵列基板、显示装置及其驱动方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000078617A (ja) * 1998-09-01 2000-03-14 Sharp Corp 立体画像表示装置
JP2007295381A (ja) * 2006-04-26 2007-11-08 Funai Electric Co Ltd 表示言語選択機能を有する電子機器
CN103000661A (zh) * 2012-12-12 2013-03-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN106125432A (zh) * 2016-08-29 2016-11-16 武汉华星光电技术有限公司 显示器及其显示面板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101877448B1 (ko) * 2011-06-30 2018-07-12 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
KR102072140B1 (ko) * 2013-06-26 2020-02-03 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101798433B1 (ko) * 2014-12-31 2017-11-17 엘지디스플레이 주식회사 인셀 터치 액정 디스플레이 장치와 이의 제조방법
JPWO2017085591A1 (ja) * 2015-11-20 2018-09-06 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器
CN107068717A (zh) * 2017-04-06 2017-08-18 惠科股份有限公司 显示面板及其制造方法
CN107170899A (zh) * 2017-04-06 2017-09-15 惠科股份有限公司 显示面板及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000078617A (ja) * 1998-09-01 2000-03-14 Sharp Corp 立体画像表示装置
JP2007295381A (ja) * 2006-04-26 2007-11-08 Funai Electric Co Ltd 表示言語選択機能を有する電子機器
CN103000661A (zh) * 2012-12-12 2013-03-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN106125432A (zh) * 2016-08-29 2016-11-16 武汉华星光电技术有限公司 显示器及其显示面板

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